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IMPORTANT QUESTION OF PHYSICS (SAMPLE PAPER AND PREVIOUS YEAR)

CHAPTER: - SEMICONDUCTOR DEVICES

ANSWER THE FOLLOWING QUESTION (CARRY 1 MARKS)

Q1:- What is the resistivity of a pure semiconductor at absolute zero?

(i) Zero
(ii) Infinity
(iii) Same as that of conductors at room temperature
(iv) Same as that of insulators at room temperature

Q2:-When the conductivity of a semiconductor is due to the rupture of its covalent bonds only then
the semiconductor is called

a) Extrinsic b) Intrinsic c) Donor d) Acceptor

Q3:-In a good conductor, the energy gap between the valence and conduction bands is

(a) 1eV (b) 6eV (c) Infinite (d) Zero

Q4:-When a forward bias is applied to a p-n junction, it

(a) Raises the potential barrier. (b) Reduces the majority carrier current to zero.

(c) Lowers the potential barrier. (d) None of the above.

Q5:-Why Silicon is more widely used for semiconductor devices?

(A) It can be used at much higher temperatures than germanium.

(B) It is cheaper than germanium.

(C) It has higher conductivity than germanium.

(D) None of the above.

Q6:-A p-n photo diode is made of a material with a band gap of 2.0 eV. The minimum frequency of
the radiation that can be absorbed by the material is nearly?

(a) 5×1014 Hz (b) 5×1013 Hz (c) 5×1012 Hz (d) 5×1011 Hz

Q7:-Where does the Fermi level lies for a p-type semiconductor?

 a) Close to V.B b) Close to C.B c) Away from V.B d) At infinity

Q8:-In a p- type semiconducting material, the Fermi level is 0.3 eV above the valence band. The
concentration of accepter atoms is increased. The new position of Fermi level is likely to be shifted
towards which band?

a) C.B b) V.B c) Will not shift d) Can’t be determined

Q9:-In a p-type semiconductor, current conduction is by:

(a) Atoms (b) holes (c) electrons (d) protons

Q10:-. Hole is

(a) An anti-particle of electron.

(b) A vacancy created when an electron leaves a covalent bond.

(c) Absence of free electrons.

(d) An artificially created particle.

Q11:- ASSERTION (A): A pure semiconductor has negative temperature coefficient of resistance.

REASON: In a semiconductor on raising the temperature, more charge carriers are released,
conductance increases and resistance decreases.

12:- Assertion: Electron has higher mobility than hole in a semiconductor.

Reason: The mass of electron is less than the mass of the hole.

ANSWER THE FOLLOWING QUESTION (CARRY 2 MARKS)

Q1:-Draw energy band diagram for p type semiconductor. Mark its acceptor level also

OR

Explain how a depletion region is formed in a junction diode.

Q2:- Discuss the role of a full wave rectifier.

Q3:- Draw the energy band diagram of an n-type and a p-type semiconductor at temperature T>0 K.
Mark the donor and accepter energy levels with their energies.

OR

Distinguish between an intrinsic semiconductor and n-type semiconductor. Why an n-type

semiconductor is electrically neutral, although it has number of electrons much greater than number
of holes.

Q4:-How does the resistivity of a semiconductor varies with temperature. Justify?

Q5:-Draw the circuit diagram of full wave rectifier and also draw its input and output wave forms.
Q6:- How is forward biasing different from reverse biasing in a p-n junction diode?

Q7:- Define the terms depletion layer and Potential barrier.

Q8:-What is doping? Write the name of the impurities used to fabricate p type & n type
semiconductor.

OR

Draw the energy band diagram of conductor, insulator and semiconductor.

Q9:-Draw the circuit diagram used to determine the VI characteristics of forward and reverse
biasing.

Q10:-Draw IV characteristics of PN junction diode. Draw circuit diagram also.

Q11:-A semiconductor has equal electron and whole concentration of 6X108 / m3. On doping with
certain impurity, electron concentration increases to 8X1012 / m3.

(i) Identify the new semiconductor

(ii) Calculate the new whole concentration.

Q12:- Explain the formation of depletion region for p-n junction diode with the help of suitable
diagram.

Or

What is barrier potential in PN junction diode? Explain its variation with forward and reverse biased

Q13:-Draw circuit diagram and input and output wave forms of half wave and full wave rectifiers.

Q14:-Explain the formation of depletion layer in p-n junction and write its importance in p-n
junction.

CASE BASED QUESTION (CARRY 4 MARKS)

Q1:- Read the following paragraph and answer the questions

Consider a thin p-type silicon (p-Si) semiconductor wafer. By adding precisely a small quantity of
pentavelent impurity, part of the p-Si wafer can be converted into n-Si. There are several processes
by which a semiconductor can be formed. The wafer now contains p-region and n-region and a
metallurgical junction between p-, and n- region. Two important processes occur during the
formation of a p-n junction: diffusion and drift. We know that in an n-type semiconductor, the
concentration of electrons (number of electrons per unit volume) is more compared to the
concentration of holes. Similarly, in a p-type semiconductor, the concentration of holes is more than
the concentration of electrons. During the formation of p-n junction, and due to the concentration
gradient across p-, and n- sides, holes diffuse from p-side to n-side (p → n) and electrons diffuse
from nside to p-side (n → p). This motion of charge carries gives rise to diffusion current across the
junction.
1. How can a p-type semiconductor be converted into n- type semiconductor?

2. Name the two processes used in formation of Pn junction.

3. What are minority charge carriers in p – type semiconductor?

4. Why diffusion occurs during formation of pn junction?

Q2:-Two important processes are involved in the formation of p-n junction. Due to concentration
gradient across p & n side of the junction, holes diffuse from p to n side and electrons diffuse from n
to p side. This results in the setup of a layer of +ve ions on n side & a layer of –ve ions on p side. These
two layers of ions stops further diffusion of charges and drift the majority charges back to their original
sides.

(i) What is composition of Depletion layer in PN junction

(ii) What is the effect of doping on width of depletion layer?
(iii) Name the two Processes in the formation of depletion layer
(iv) Why pure semiconductors behave like insulators at absolute zero temperature

Q3:- Case study:-

When a diode is forward biased, it is found that beyond forward voltage, called knee voltage, the
conductivity is very high. At this value of battery biasing for p-n junction, the potential barrier is
overcome and the current increases in forward voltage .when the diode is reverse biased, the reverse
bias voltage produces a very small current about a few microamperes which almost remains constant
with bias. This small current is called saturation current. 4

(i) draw the V-I graph in case of forward biasing and reverse biasing
(ii) How does the thickness of depletion region changes in forward biasing.
(iii) Why the reverse saturation current does is very small, of the order of few microamperes.
OR

Name a device which is used to convert alternating current into direct current.

Q4:- A P-N JUNCTION DIODE:

P-n junction is a semiconductor diode. It is obtained by growing p-type semiconductor over an n- type
semiconductor. A thin layer is developed at the p- n junction who is devoid of any charge carrier but
has immobile ions. It is called depletion layer. At the junction a potential barrier appears which does
not allow the movement of majority charge carriers across the junction in the absence of any biasing
of the junction. P-n junction offers low resistance when forward biased and high resistance when
reverse biased.

1. What is the effect of reverse biasing of Pn junction diode on depletion layer.

2. Which type of material has maximum forbidden energy band gap?

3. Name two processes involved in formation of Pn junction diode. OR Define potential barrier.
Q5:- p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor in close
contact with n- type semiconductor. A thin layer is developed at the p- n junction who is devoid of any
charge carrier but has immobile ions. It is called depletion layer. At the junction a potential barrier
appears which does not allow the movement of majority charge carriers across the junction in the
absence of any biasing of the junction. P-n junction offers low resistance when forward biased and
high resistance when reverse biased.

1. What is the electric field at the middle of depletion layer of reverse biased p- n junction. [1]

2. Define potential barrier. OR Name the minority charge carrier in extrinsic semiconductor [1]

3. Draw the energy band diagram for P type and N type semiconductor. [2]

Q6:- Read the below text and answer any four of questions that follow:

Band theory of solid: Consider that the Si or Ge crystal contains N atoms Electrons of each atom will
have discrete energies in different orbits. The electron energy will be same if all the atoms are isolated,
ie, separated from each other by a large distance. However, in a crystal, the atoms are close to each
other (2 A to 3 A) and therefore the electrons interact with each other and also with the neighboring
atomic cores. The overlap (or interaction) will be more felt by the electrons in the outermost orbit
while the inner orbit or core electron energies may remain unaffected. Therefore, for understanding
electron energies in Si or Ge crystal, we need to consider the changes in the energies of the electrons
in the outermost orbit only. For Si, the outermost orbit is the third orbit (n=3), while for Ge it is the
fourth orbit (n = 4). Each Si and Ge has four valence electrons, but Ge at a given temperature has more
free electrons and a higher conductivity compared to Si. So, silicon is more widely used for
semiconductor devices, since it can be used at much higher temperature than germanium.

1. When the energy of electrons of atoms of a substance will be same?

2. What do you mean by doping? Name the types of dopants in semiconductors

OR

Name the additional energy level formed in extrinsic semiconductors.

3. Draw the energy band diagram for Si and Ge.

Q7:-Consider a thin p-type silicon (p-Si) semiconductor wafer. By adding precisely a small quantity of
pentavelent impurity, part of the p-Si wafer can be converted into n-Si. There are several processes
by which a semiconductor can be formed. The wafer now contains p-region and n-region and a
metallurgical junction between p-, and n- region. Two important processes occur during the formation
of a p-n junction: diffusion and drift. We know that in an n-type semiconductor, the concentration of
electrons (number of electrons per unit volume) is more compared to the concentration of holes.
Similarly, in a p-type semiconductor, the concentration of holes is more than the concentration of
electrons. During the formation of p-n junction, and due to the concentration gradient across p-, and
n- sides, holes diffuse from p-side to n-side (p → n) and electrons diffuse from n-side to p-side (n →
p). This motion of charge carries gives rise to diffusion current across the junction.

(i) How can a p-type semiconductor be converted into n- type semiconductor?

(ii) Which is responsible for diffusion current?
(iii) What is drift current?
Or
How is depletion region formed?

(iv) Concentration of which type of charge carrier is more in n type semiconductor?