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Design_optimization_of_high_frequency_transformer_for_dual_active_bridge_DC-DC_converter

This paper discusses a design optimization procedure for high frequency transformers (HFT) used in bidirectional dual active bridge (DAB) isolated DC-DC converters, focusing on minimizing total losses by considering leakage inductance, phase-shifted angle, and skin and proximity effects. The methodology aims to achieve zero voltage switching without additional inductors, thus enhancing efficiency in high-power applications like electric vehicles. Experimental validation of the proposed design is conducted using a prototype HFT, demonstrating its effectiveness in reducing electrical losses.

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Akshay Abhilash
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0% found this document useful (0 votes)
15 views7 pages

Design_optimization_of_high_frequency_transformer_for_dual_active_bridge_DC-DC_converter

This paper discusses a design optimization procedure for high frequency transformers (HFT) used in bidirectional dual active bridge (DAB) isolated DC-DC converters, focusing on minimizing total losses by considering leakage inductance, phase-shifted angle, and skin and proximity effects. The methodology aims to achieve zero voltage switching without additional inductors, thus enhancing efficiency in high-power applications like electric vehicles. Experimental validation of the proposed design is conducted using a prototype HFT, demonstrating its effectiveness in reducing electrical losses.

Uploaded by

Akshay Abhilash
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© © All Rights Reserved
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Design Optimization of High Frequency Transformer

for Dual Active Bridge DC-DC Converter


K. D. Hoang and J. Wang


Abstract -- This paper presents a design optimization leakage inductance and the phase-shifted angle between its
procedure for high frequency transformer (HFT) employed in terminal square wave voltages. As a result, there is always
bidirectional dual active bridge (DAB) isolated DC-DC a trade-off between the leakage inductance and the phase-
converter. It is shown that leakage inductance, phase-shifted
shifted angle when maximizing the power conversion.
angle, skin and proximity effects have to be taken into account
together with the HFT voltage-ampere rating to minimize Additionally, at high switching frequency, high AC
total losses. It is also demonstrated that the leakage inductance losses in the HFT windings are inevitable due to the skin-
required for zero voltage switching operation can be realized and proximity-effects [5], [6], and [7]. The leakage
under the proposed design procedure without employing extra inductance and the magnitude of the AC loss are influenced
inductor. The proposed design methodology is experimentally by the transformer geometry and winding layout.
validated by measurements on a prototype HFT. Therefore, the leakage inductance, phase-shifted angle, and
the skin and proximity effects need to be taken into
Index Terms--AC losses, converter losses, design
optimization, dual active bridge DC-DC converter, eddy consideration in the HFT design procedure for minimizing
current effects, high frequency transformer, Litz-wire, electrical losses.
MOSFET, zero voltage switching operation. In [8], [9], [10], [11], and [12], design procedures for
high frequency transformer (HFT) were presented.
I. INTRODUCTION However, all these proposed methods start with the core

R CENTLY, investigations in high-power DC-DC dimensions being determined based on voltage-ampere


conversion have been significantly increased due to its (VA) rating of the transformer. The winding arrangement
essential role in electric vehicle applications and based on selected core dimensions is subsequently
battery based energy storage systems [1], [2]. Among DC- suggested. As a result, the influence of leakage inductance
DC converter topologies, bidirectional dual active bridge and phase-shifted angle on the design are neglected under
(DAB) isolated DC-DC converter [3], [4] shown in Fig. these conventional design methodologies.
1(a) is often considered as a preferred candidate for such
iB1 iB 2
applications because of its advantages on galvanic S11 S13 S 21 S 23
isolation, switching loss reduction, electromagnetic n1 : n2
interference (EMI) improvement, and efficiency gain.
Generally, this topology consists of two voltage source V1 vT 1 iT 1 iT 2 vT 2 V2
active bridges linked by a galvanically isolated high- HFT
frequency transformer (HFT). Each bridge is controlled to S12 S14 S 22 S 24
produce a high-frequency square wave voltage at its
S XX
transformer terminals and the power flow from one DC
source to the other is regulated via appropriately controlling
M XX D XX C XX
the phase-shifted angle between these two square wave
voltages [4]. (a)
It is desirable for a DAB isolated DC-DC converter to iB1 iB' 2
operate at high switching frequency to achieve high-power S11 S13 S 21 S 23
Llk
density and light-weight. However, it is essential that soft-
switching techniques with zero or low switching losses are V1 vT 1 iT 1 vT' 2 V2'
employed. In [4], it was demonstrated that leakage
inductance value of the isolated HFT needs to be carefully HFT
S12 S14 S 22 S 24
selected for zero voltage switching (ZVS). As leakage
inductance under the HFT design is normally minimized
for conducting loss reduction, additional inductors were
utilized [4] which results in increase in HFT size and ( b)
Fig. 1. DAB DC-DC converter [3]; each switch SXX is implemented by a
weight. power MOSFET MXX, a diode DXX, and a snubber capacitor CXX; iB1-V1 and
On the other hand, based on the primary referred iB2-V2 are, respectively, the primary and secondary DAB current-voltage;
equivalent circuit of the DAB isolated DC-DC converter iT1-vT1 and iT2-vT2 are, respectively, the primary and secondary HFT current-
shown in Fig. 1(b) [3], it is evident that the power transfer voltage. (a) Topology. (b) Primary referred equivalent circuit.
via the HFT in the DC-DC converter relies on both its This paper presents a design optimization procedure for
HFT which takes into consideration the leakage inductance,
This work was supported in part by the European Commission under phase-shifted angle, skin and proximity effects for
Grant No. 260087. minimizing total losses of DAB isolated DC-DC converter.
K. D. Hoang and J. Wang are with the Department of Electronic and
Electrical Engineering, The University of Sheffield, Mappin Street,
The proposed design method is experimentally validated by
Sheffield, United Kingdom (e-mail: [email protected]). measurements on a prototype HFT.

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II. PRINCIPLES OF DAB DC-DC CONVERTER OPERATION For      (mode 3)
i ( )  B(   )  I  (7)
A. Operation of DAB DC-DC Converter
1 B 2

3   (   )  ( I   B)(   )( I   B)
2 3 3
I rms (8)
2  3 
 V1  V1
 2 3 1 B 2 
vT 1 I av 3  (   2 )  ( I   B)(   ) (9)

 V1  V1 2  2 
I T 1rms  2( I rms
2
1  I rms 2  I rms 3 )
2 2
(10)
V '
V' V1
2 2
I0   [  d (2   )]   I  (11)
v'
T2
2Llk
 V2'  V2'  V2'
V12  
PO  d  1   (12)
Llk   
V2' V n I
d N 2 ;N  1 ;   0 (13)
iB1 V1 V1 n2 A
where d is the conversion ratio; i(θ) is the instantaneous
HFT current at the angular θ; I0 and Iπ is, respectively, the
HFT current at θ = 0 and θ = π; Iavi and Irmsi is,
respectively, the average and rms values of HFT current
iB' 2 associated with the ith conduction mode; IT1rms is the total
rms value of HFT current; Llk is the leakage inductance; N
is the turn ratio; n1 and n2 is, respectively, the primary turn
number and secondary turn number; PO is the transferred
iT 1
     t power; V1 and V2’ is, respectively, the primary voltage
value and secondary voltage referred primary.
Zero voltage switching occurs when an active switch in
. the DAB is turned on while its anti-parallel diode is free-
Fig. 2. Idealized operating waveforms for DAB DC-DC converter [3]; ω wheeling. Thus the condition for ZVS operation is given
is the angular frequency; δ is the current zero-crossing angle; and ϕ is the
phase-shifted angle.
by:
I 0  0 ; I  0 (14)
TABLE I CONDUCTION MODE OF DAB DC-DC CONVERTER

0         B. Conduction and Switching Losses of DAB DC-DC


Converter
Bridge 1 Bridge 2 Bridge 1 Bridge 2 Bridge 1 Bridge 2
D1114 D2223 M 1114 M 2223 M 1114 D2124 Due to its fast switching characteristics, MOSFET is
often selected for DAB isolated DC-DC converters.
Assuming that the power is transferred from bridge 1 to According to [9] and [13], the conduction and switching
bridge 2 as denoted in Fig. 1(b), idealized operating losses of one MOSFET device of the converter can be
waveforms and conduction mode of a DAB isolated DC- expressed as:
DC converter [3] can be illustrated in Fig. 2 and Table I, For 0     (mode 1)
respectively. Based on these operating waveforms, PDpri.1  VD I Fav  RD I Frms
2
 f s E Doff (15)
instantaneous value of HFT current, iT1=i(θ), can be
computed from the current slope associated with the PD sec .1  VD NI Fav  RD N 2 I Frms
2
 f s E Doff (16)
V  V2' V V ' For      (mode 2)
conducting modes A  1 ; B  1 2 as follows.
Llk Llk PMpri.2  RM I Mrms
2
 f s EMon (17)
For 0     (mode 1) PM sec .2  RM N 2 I Mrms
2
 f s ( E Mon  E Moff ) (18)
i ( )  A  I 0 (1) For      (mode 3)
 A2 3 1  PMpri.3  RM I Mrms
2
 f s E Moff (19)
   AI 0 2  I 02 
2
I rms1  (2)
 3 2  PD sec .3  VD NI Fav  RD N I 2 2
Frms (20)
1 A 2  (t ri  t fv )
I av1     I 0  (3)
EMon  VDSon I Mon  VDSonQrr (21)
2  2  2
For      (mode 2) (t rv  t fi )
i ( )  A(   ) (4) EMoff  VDSoff I Moff (22)
2
1  A2 3  EDoff  VDSonQrr (23)
2   (   )  A  (   )
2 3 2
I rms (5)
2  3  PS .Loss  4( PDpri.1  PMpri.2  PMpri.3  PD sec .1  PM sec .2  PD sec .3 ) (24)
1 A where EDoff is the reverse recovery charge energy of free-
I av 2  (   ) 2 (6)
2 2 wheeling diode; EMon and EMoff is, respectively, the switch-

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on and switch-off energy of the MOSFET; fs is the bidirectional battery charger. The chosen switching device
switching frequency; IFav and IFrms is, respectively, the is a power MOSFET (STW55NM60ND) which is
average and rms forward current of the free-wheeling recommended for bridge topologies, in particular, ZVS
diode; IMon and IMoff is, respectively, the MOSFET current at phase-shifted converters [15]. The design process can be
on-state and off-state; IMrms is the rms value of the categorized into 4 steps as follows.
MOSFET current; PD and PM is, respectively, the switching
TABLE II DESIGN SPECIFICATION OF HFT
losses of the free-wheeling diode and MOSFET; PS.LossΣ is
the total conduction and switching losses; Qrr is the reverse Output power 2.2kW
recovery charge; RD and RM is, respectively, the free- Input voltage 380V
Output voltage 90-140V
wheeling diode and the MOSFET on-state resistance; tri, tfi, Nominal output voltage 120V
and trv, tfv is, respectively, the MOSFET current and voltage Switching frequency 40kHz
rise-time and fall-time; VD is the freewheeling diode Flux density in the core, Bmax 0.25T
forward voltage drop; VDSon and VDSoff is, respectively, the Switching device STW55NM60ND [15]
MOSFET Drain-Source voltage at on-state and off-state.
A. Step 1: Optimal Phase-shifted Angle
For completeness, aforementioned definitions for
switching loss calculation are diagrammatically represented The phase-shifted angle of the DAB isolated DC-DC
in Fig. 3 [13]. Appropriate currents expressed in (1) to (11) converter varies from 0 to 90 degrees [4], Fig. 2. Therefore,
are employed to compute the converter conduction and for the given design specification PO = 2.2kW, V1 = 380V,
switching losses. It is worth noting that for the ZVS and fs = 40kHz, the phase-shifted angle ϕ is varied from 0
operation, EDoff and EMon become zero. to 90 degrees to minimize HFT current associated with a
given output voltage. Since the output voltage varies from
Switch  on Switch  off 90V to 140V, which corresponds to the conversion ratio d
vGS vGS varies from 0.8 to 1.5. For each value of ϕ, the resultant
leakage inductance for the power transfer and the HFT
iGon VGS (th) current are computed, respectively, using (12) and (10).
Fig. 4(a) shows that a phase-shifted angle around 30
iGoff
degrees can result in minimum HFT current for a full-range
vDS vDS conversion ratio from 0.8 to 1.5. Fig. 4(b) illustrates the
iDon iDoff
variation of the leakage inductance from 90μH to 170μH
when d varies from 0.8 to 1.5 for the phase-shifted angle of
t fv1 t fv 2 t rv1 trv 2 30 degrees.
t ri t fv trv t fi 12

10
Current (A)

Pon Poff
8

vDS
6
iF Qrr iDon Reverse Recovery Effect  100 300 500 700 900
4
0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Qrr t Conversion Ratio - d
(a) HFT current
t ri trr t fv
400
 100 300 500 700 900
Leakage Inductance (H)

Fig. 3. Switching losses of power MOSFET [13].


300
In the next section, the conduction and switching loss
model is utilized for optimizing HFT design with particular 200
emphasis on minimizing the total losses in the HFT and
DAB. 100

III. OPTIMIZED HFT DESIGN 0


0.8
1.1 0.91.2 1 1.3 1.4 1.5
The objective of the HFT design is to find the optimal Conversion Ratio - d
values of the leakage inductance, phase-shifted angle, core (b) Leakage inductance
Fig. 4. Variation HFT current and leakage inductance with phase-shifted
dimensions, turn ratio, and winding information in order to angle and conversion ratio.
minimize the total converter losses, PC.LossΣ, (conduction
and switching losses, winding losses, and core losses) of B. Step 2: Optimal Leakage Inductance and Conversion
the DAB isolated DC-DC converter. Normally, for high Ratio
switching frequency applications, ferrite core should be In step 2, for a given leakage inductance value between
selected to eliminate eddy current loss in the core [14]. The 90μH and 170μH, PO = 2.2kW, V1 = 380V, and fs = 40kHz,
design specification of the HFT is shown in Table II. The the variations of phase-shifted angle, HFT current, and
output voltage range from 90V to 140V corresponds to the ZVS operation range with the conversion ratio d (0.8~1.5)
variation of battery voltage when the converter is used as a are investigated according to (12), (10), and (14).

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Fig. 5(a) shows that when the leakage inductance is
around 90μH, the HFT current becomes minimum for a dT
conversion ratio of 1.07. Fig. 5(b) shows that the phase- a
shifted angle associated with Llk = 90H and d = 1.07 is 2
around 22 degrees, whilst Fig. 5(c) illustrates the ZVS a
operation range, where “1” indicates ZVS, and “0” 2 a
h
otherwise. It can be seen that d = 1.07 satisfies the ZVS
requirement for the design specification given in Table II.
11 Llk 90H 110H 130H 150H 170H
10 MLT
Bobbin
Current (A)

8
Core Winding Core Winding Core dT
7

6
0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Conversion Ratio - d
(a) HFT current a 0.8b a
2 b a b 2
100 Llk 90H 110H 130H 150H 170H Fig. 6. Core dimensions used in HFT design investigation.
80
By defining two factors K1 and K2 as
 (degrees)

60 d h
K1  T ; K 2  (28)
40 a b
Substituting (28) into (25) and (26) gives
20
n1 K1a 2 4 Bmax f s  V1 (29)
n1  0 K 2 MLT  3Llk
0 2
0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 (30)
Conversion Ratio - d
In addition, the relation between the core window area,
(b) Phase-shifted angle
Aw, and the primary conductor area [9] can be expressed as
Llk 90H 110H 130H 150H 170H 2 I T 1rms
Aw  K 2 b 2  n1 (31)
k f J max
ZVS Condtion

1
where kf is the filling factor chosen as 0.3 for Litz-wire and
Jmax is the current density given as 5.5 A.m-2 according to
the thermal dissipation [9].
Equations (29), (30), and (31) can be used to study the
ZVS optimized core dimensions for minimizing both core
0 weight, CW, and winding weight, WW.
0.81.1 0.9 1.2 1 1.3 1.4 1.5
Conversion Ratio - d CW   Fe CV   Fe aK1[2(a  b)(a  K 2b)  2 K 2 b 2 ] (32)
(c) ZVS operation range
Fig. 5. Variation HFT current and phase-shifted angle and ZVS range with WW   Cu k f AW MLT (33)
leakage inductance and conversion ratio. where ρFe and ρCu is, respectively, the ferrite mass density
C. Step 3: Optimal Core Dimensions and copper mass density; CV is the core volume.
In this step, core dimensions are optimized for minimum 500
CW-K1:0.5
HFT weight and electrical losses with PO = 2.2kW; Llk = 400 WW-K1:0.5
90μH; d = 1.07; and ϕ = 22 degrees.
TW-K1:0.5
Weight (g)

Assuming the chosen core is an EE ferrite core with 300


CW-K1:3
dimensions shown in Fig. 6, the leakage inductance and
200 WW-K1:3
maximum flux density, Bmax, can be computed by [9]:
TW-K1:3
1 h 100
Llk   0 n1 MLT
2
(25)
3 b
0
V1 5 10 20 15
25 30 35 40
Bmax  B  (26) a (mm)
4 Acore f s n1 Fig. 7. Variations of HFT weight with a and K1.
where Acore is the core area; MLT is the mean-length per
Fig. 7 shows the variations of the core weight, the
turn which is estimated by assuming that bobbin occupies
winding weight, and the total HFT weight (TW = CW + WW)
20% of window area.
with a for K1 = 0.5 and 3. As can be seen, minimum total
Acore  d T a ; MLT  2(a  d T )  0.8b(2   ) (27)
HFT weight can be achieved when a is between 10mm and
It is worth noting that the top-bottom winding 23mm. Fig. 8 shows variations of the other core
arrangement is chosen for the designed HFT in order to dimensions, b and K2, the mean length per turn, MLT, and
maximize the attainable leakage inductance [16]. the number of turns of primary winding n1 with a and K1.

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When an optimal a for a given K1 which minimize the total 3
HFT losses can be determined, then the other dimensions,  4 (37)
4  2 n0  24
MLT and n1 are found from Fig. 8. 1 (16m  1  2
)
24 2
50
K1 0.5
1 1 1 1 1 
40
1  1 ( )  2 2    3  14  5  (38)
1.5   3 2 8
32 
2
30 1  1 3 1 7
b (mm)

2.5  2 ( )    5   12   (39)
20
3 2 2 2 
2  Cu n1  2 n0  24
10 R AC  [ 1 ( )  (16m 2  1  2 ) 2 ( )] (40)
 s n0 d 0 24 
0
8 14 20 26 32 where dc is the conductor diameter [9] computed from core
a (mm)
(a)
window dimensions, HFT current, and current density; d0 is
the optimized strand diameter; m is the number of winding
10
K1 0.5 layers; n0 is the number of strands per Litz-wire conductor;
1 β is the Litz-wire packing factor; δs is the skin depth.
8
1.5
2 30
6
2.5
K2

HFT Losses (W)


4
20
2

0 10
8 14 20 26 32
a (mm)
(b) K1 0.5 1 1.5 2 2.5 3
0
200 8 14 20 26 32
a (mm)
(a) Total HFT losses
150
200
MLT (mm)

K1 1 1.5 2 2.5 3
100
160
Temperature (0C)

50
120
K1 0.5 1 1.5 2 2.5 3
0
8 14 20 26 32 80
a (mm)
(c)
40
150 K1 8 20 14 26 32
0.5 1 1.5 2 2.5 3 a (mm)
(b) Temperature
Fig. 9. Variation of HFT losses and temperature with a and K1.
100
n1 (turns)

Based on the AC loss model of (40), the variations of


total HFT losses, including DC and AC losses and core loss
50
with the core dimension a and K1 is shown in Fig. 9(a). The
resultant temperature rise [9] can be determined as follows:
0 10 8 T
8 14 20 26 32 R , rad  (41)
a (mm) 5.1ACR [(Ts  273.15) 4  (Ta  273.15) 4 ]
(d)
Fig. 8. Variations of core dimensions, MLT and n1 with a. (d vert ) 0.25 R R
R ,conv  ; R ,sa   ,rad  ,conv (42)
Further, optimal round Litz-wire design needs to be 1.34 ACR (T ) 0.25 R ,rad  R ,conv
determined to minimize the total winding losses. According T
to [17] and [18], optimal number of Litz-wire strands PHFT   PAC  PC ; PAC  RAC I T21rms ; PC  PV CV (43)
R ,sa
should be chosen to have its AC resistance, RAC, being
around 2 times of its DC resistance. This optimal AC 4 K 1a (a  b)  2 K 1a ( K 2 b  a ) 
ACR    (44)
resistance in per unit length can be computed as follows:  4(a  b)( K 2 b  a )  2K 2 b  2b  4ab 
2 2

  2.4128d c2  1.5113d c  0.3535 (34) where ACR is the crossectional area; dvert is the HFT vertical
height; PAC is the winding loss; PC and PV is, respectively,
0.075  b1  b12  12 s4 the core loss and the relative core loss; PHFTΣ is the total
s  ; d0  (35)
fs 2 HFT losses; Rθ,conv and Rθ,rad are the thermal resistances due
to convective and radiative heat transfer, respectively; Rθ,sa
 2 2 24 is the total thermal resistance; Ta and Ts is the ambient and
b1  (16m 2  1  )d c2 (36)
24 2 surface temperature in 0C, respectively; ∆T = Ts - Ta.
Fig. 9(b) shows the resultant temperature variations with

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a and K1 assuming Ta = 250C. From Fig. 9(b), it can be seen IV. PROTOTYPE AND MEASUREMENTS
that the surface temperature is minimized when a is The outcomes of the proposed HFT design optimization,
between 14mm to 17mm. This results together with the which is realized with core E55/28/21, are summarized in
relevant K1 presented in Fig. 9(a) and the minimum MLT
Table IV. It is worth noting that leakage inductance
value shown in Fig. 8(c) are utilized to determine the
computed from (25) should be rescaled by a factor 0.7 due
suitable ferrite core (E55/28/21). Table III compares the
to three-dimensional and high frequency effects [19]. The
dimensions of optimized design and that of the selected
core. It is evident that the proposed design optimization winding arrangement for the HFT design is shown in Fig.
procedure leads to appropriate selection of available cores. 12(a). A prototype transformer has been constructed as per
the optimal design, Fig. 12(b). The magnetizing and
TABLE III COMPARISON BETWEEN OPTIMIZED DESIGN AND CHOSEN CORE leakage inductances seen on both the primary and
Optimized design E55/28/21 (N87)
secondary sides are measured using an impedance analyzer.
a = 17 (mm), K1 = 1.25 a = 17.2 (mm), K1 = 1.22 Fig. 13 shows the variations of resultant total converter
MLT = 112 (mm) MLT = 124 (mm) losses with output voltage and power. As can be seen, the
K2 = 2.78 K2 = 3.645 maximum total losses occur at 90V and PO = 2200W is
b = 8.63 (mm) b = 10.1 (mm) about 6.59% of the rated output power. At the nominal
n1 = 27 (turns) n1 = 27 (turns)
output voltage, the total losses are reduced to less than 5%.
D. Step 4: Optimal Number of Turns of the Secondary The measurement results are shown in Fig. 14 and validate
Winding the predicted magnetizing and leakage inductance, Table
Fig. 10 shows the numerical results of the total converter IV. This implies that ZVS operation can be ensured with
losses (PC.LossΣ = PS.LossΣ + PHFTΣ) with the output voltage the proposed design method without employing extra
and transformer turn ratio when d = 1.07, Llk = 90μH inductor.
realized with E55/28/21 core; ϕ = 22 degrees, and PO = TABLE IV OPTIMIZED DESIGN OF HFT

2200W. For the purpose of illustration, ZVS range at 90V Bmax 0.24848 (T)
(dashed blue line with crosses) and 140V (dashed grey line Primary winding 27 turns, 162 strads-AWG38
with circles) are also shown. As will be seen, the total Secondary winding 8 turns, 300 strands-AWG35
losses decrease with the increases in turn ratio, but ZVS Magnetizing inductance Pri./Sec. 5.231/0.46 (mH)
operation at 140V is lost when the turn ratio is greater than Leakage inductance Pri./Sec. 90/10.5 (μH)
3.4. Thus the optimal turn ratio for minimum total
converter losses and full ZVS operation over the 90V-140V
output voltage range is 3.4. The resultant number of turns
of the secondary winding is n2 = 8. Fig. 11 shows the
variations of minimum leakage inductance for ZVS
operation according to (14) with the output voltage for PO =
2200W and 500W with n2 = 8. It is obvious that ZVS
operation is achieved for full range output voltage at PO =
2200W with Llk = 90μH. At lower output power, modified
modulation techniques should be considered [2] to facilitate (a) (b)
ZVS operation. Fig. 12. HFT design. (a) Winding arrangement. (b) Prototype.
180 160
PO 2200W 1500W 1000W 500W
160 1
90V 120
Total Losses (W)
Total Losses (W)

140
ZVS

120 115V 80

100 140V
40
80 ZVS
60 0 0
2.83.4 3 3.6 3.2
3.8 4 4.2 90 100
110 120 130 140
Turn Ratio Output Voltage (V)
Fig. 10. Variation of total converter losses and ZVS range with turn ratio Fig. 13. Variation of total converter losses with output voltage and power.
and output voltage.
400 V. CONCLUSION
PO=2200W
In this paper, a design optimization procedure for the
Leakage Inductance (H)

PO=500W
300 HFT employed in DAB isolated DC-DC converter has been
described and experimentally validated. It has been shown
ZVS region
200
Non-ZVS region that by considering leakage inductance, phase-shifted angle
together with HFT VA rating, essential design equations
100
ZVS region for minimizing total losses of the DAB isolated DC-DC
Non-ZVS region
converter can be derived. It also has been demonstrated that
0
90
110 120100 130 140 leakage inductance requirement for ZVS operation can be
Output Voltage (V) achieved under the proposed design method without
Fig. 11. Variation of minimum leakage inductance for ZVS with output employing an extra inductor. Comparative study of DAB
voltage for PO = 2200W and 500W with n2 = 8.
HFT design with conventional and the proposed design

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methods will be performed in the near future. Commission for financial support and the P-MOB project
partners for permission of the publication of this paper.

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VIII. BIOGRAPHIES
Khoa Dang Hoang (S’10) received the B.Eng. and M.Eng. degrees from
Ho Chi Minh City University of Technology, Ho Chi Minh City, Vietnam,
in 2002 and 2005, respectively, and the Ph.D. degree from the University
of Sheffield, Sheffield, U.K., in 2011, all in electrical and electronics
engineering. He is currently working as a post-doctoral Research Associate
at the University of Sheffield. His key research interests include power
conversion and advanced control techniques for electrical drives.

Jiabin Wang (SM’03) received the B.Eng. and M.Eng. degrees from
Jiangsu University of Science and Technology, Zhengjiang, China, in 1982
and 1986, respectively, and the Ph.D. degree from the University of East
(d) Secondary leakage inductance London, London, U.K., in 1996, all in electrical and electronic
Fig. 14. Measured inductances of prototype HFT. engineering. Currently, he is a Professor in Electrical Engineering at the
University of Sheffield, Sheffield, U.K. His research interests range from
motion control to electromagnetic devices and their associated drives in
VI. ACKNOWLEDGMENT applications ranging from automotive, household appliances to aerospace
sectors.
The authors gratefully acknowledge the European

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