DISCRETE SEMICONDUCTORS

DATA SHEET

BFR53
NPN 2 GHz wideband transistor
Product specification 1997 Oct 28
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

FEATURES PINNING
• Very low intermodulation distortion PIN DESCRIPTION
fpage 3

• Very high power gain. 1 base

2 emitter
APPLICATIONS 3 collector 1 2
• Thick and thin-film circuits. Top view MSB003

Marking code: N1.

DESCRIPTION
NPN wideband transistor in a plastic Fig.1 SOT23.
SOT23 package.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter − 18 V
VCEO collector-emitter voltage open base − 10 V
ICM peak collector current f > 1 MHz − 100 mA
Ptot total power dissipation Ts ≤ 85 °C − 250 mW
Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz; 0.9 − pF
Tamb = 25 °C
fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; 2 − GHz
Tj = 25 °C
GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz; 10.5 − dB
Tamb = 25 °C

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter − 18 V
VCEO collector-emitter voltage open base − 10 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC) − 50 mA
ICM peak collector current f > 1 MHz − 100 mA
Ptot total power dissipation Ts ≤ 85 °C (note 1) − 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note
1. Ts is the temperature at the soldering point of the collector pin.

1997 Oct 28 2
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1 260 K/W

Note
1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 10 V − − 50 nA
hFE DC current gain IC = 25 mA; VCE = 5 V; see Fig.2 25 − −
IC = 50 mA; VCE = 5 V; see Fig.2 25 − −
Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz; − 0.9 − pF
see Fig.3
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.5 − pF
Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz; − 0.9 − pF
Tamb = 25 °C
fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; − 2 − GHz
see Fig.4
GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz; − 10.5 − dB
(note 1) Tamb = 25 °C; see Fig.5
F noise figure IC = 2 mA; VCE = 5 V; f = 500 MHz; − − 5 dB
Tamb = 25 °C; see Fig.6

Note 2
S 21
 2  2
- dḂ .
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------
 1 – S 11   1 – S 22 

1997 Oct 28 3
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

MEA458 MEA457
100 2.0
handbook, halfpage handbook, halfpage
Cc
h FE
(pF)
90 1.6

80 1.2

70 0.8

60 0.4

50 0
0 50 I C (mA) 100 0 4 8 12 16 20
V CB (V)

VCE = 5 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C.

Fig.2 DC current gain as a function of collector Fig.3 Collector capacitance as a function of

current; typical values. collector-base voltage; typical values.

MEA459 MEA455
2.2 30
handbook, halfpage handbook, halfpage

gain
fT (dB)
(GHz)

1.8 20

1.4 10 G UM

I S 12 I 2

1.0 0
2
0 25 I C (mA) 50 10 10 3 f (MHz) 104

VCE = 5 V; f = 500 MHz; Tj = 25 °C. IC = 30 mA; VCE = 5 V; Tamb = 25 °C.

Fig.4 Transition frequency as a function of Fig.5 Gain as a function of frequency;

collector current; typical values. typical values.

1997 Oct 28 4
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

MEA460 MEA456
10 50
handbook, halfpage handbook, halfpage

F BS
3.5
(dB) 3.3 F = 5.5 dB
(mS)
5.0
4.5
4.0
5 0

0 −50
0 10 20 30 40 0 20 40 60 80 100
I C (mA) G S (mS)

VCE = 5 V; f = 500 MHz; GS = 20 mS; BS is tuned; Tamb = 25 °C.

IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.6 Minimum noise figure as a function of
collector current; typical values. Fig.7 Circles of constant noise figure; typical values.

1997 Oct 28 5
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

handbook, full pagewidth 1

0.5 2

0.2 5

1000 MHz 10
+j
800
∞
0.2 0.5 1 2 5 10
0
500
–j 300
10
100

0.2 5

0.5 2

MEA461
1

IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.

Fig.8 Common emitter input reflection coefficient (S11).

handbook, full pagewidth 90 o

120 o 60 o

100

150 o 30 o

300

500
ϕ
180 o 1000 MHz 0o
25 15 5
ϕ

150 o 30 o

120 o 60 o

90 o MEA463

IC = 30 mA; VCE = 5 V; Tamb = 25 °C.

Fig.9 Common emitter forward transmission coefficient (S21).

1997 Oct 28 6
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

handbook, full pagewidth 90 o

120 o 60 o
1000 MHz

800
150 o 30 o
500

300

100 ϕ
180 o 0o
0.05 0.10 0.15
ϕ

150 o 30 o

120 o 60 o

90 o MEA464

IC = 30 mA; VCE = 5 V; Tamb = 25 °C.

Fig.10 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth 1

0.5 2

0.2 5

10
+j

∞
0.2 0.5 1 2 5 10
0
–j 800 300
500 10
100
1000
0.2 MHz 5

0.5 2

MEA462
1

IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.

Fig.11 Common emitter output reflection coefficient (S22).

1997 Oct 28 7
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

PACKAGE OUTLINES

Plastic surface mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT23 97-02-28

1997 Oct 28 8
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 28 9
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

NOTES

1997 Oct 28 10
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

NOTES

1997 Oct 28 11
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Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 28 Document order number: 9397 750 02896
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