P2 Series Preliminary datasheet
- June 2024
CGD65D025SP2– Power IC
650 V - 25 mΩ - 60 A
DHDFN 10 x 10 mm2 Simplified Diagram
Features and Benefits
• 25 mΩ e-mode normally-off power GaN switch with ICeGaN Gate technology
o Wide VDD and gate drive voltage (9 – 20 V)
o High gate threshold voltage and gate robustness
o Immune to dv/dt induced shoot through with integrated Miller Clamp
o True 0 V turn off for simple gate drive and high efficiency
o Fast turn-on time for high frequency operation and easy paralleling
• Compatible with Si MOSFET, SiC and IGBT gate drivers
• Thermally enhanced dual-side cooled SMD package
• Flexible and optimum thermal design – top, bottom or dual side cooling
• Wettable flanks for automated optical inspection
• Dual gate pinout for optimal PCB layout and easy paralleling
• ESD: >2kV
Applications Topologies
• Industrial, data centre and telecom SMPS • AC/DC and DC/DC converters based on single-
• Industrial motor drives ended, half-bridge, full-bridge and three-phase
• PV inverters topologies with hard- and soft- switching
• Uninterruptable power supplies • Bridgeless Totem Pole PFC for highest efficiency
• Energy storage systems
• DC/DC resonant converters
• Buck and Boost converters
• DC/AC inverters
Absolute Maximum Ratings
Tcase = 25 °C if not listed.
PARAMETER VALUE UNIT
Operating Junction Temperature TJ -55 to +150 °C
Storage Temperature Range TS -55 to +150 °C
Drain-Source Voltage VDS 650 V
-1 to +20
Gate-to-Source Voltage VGS V
and VGS ≤ VDD
ICeGaN™ Gate Supply Voltage VDD 0 to +20 V
Continuous Drain Current ID 60 A
©2024 CGD Cambridge GaN Devices www.camgandevices.com Issued 2024-06-07 01
CGD65D025SP2
Preliminary datasheet -June 2024
Figure 1. Exemplary Application Circuit.
Packaging
Dual-side cooled DHDFN-9-1 10 x10 mm2 SMD.
9
PIN NUMBER NAME
8
1, 7 VDD 1
2
3
2, 6 Gate 5
4
6
3, 5 Kelvin Source 7
4 NC (Connect to Source)
8 Source
9 Drain
TS
TS Top-side heat-spreader
The foregoing presentation is for information purposes only and is not intended to
represent a complete or exhaustive description of CGD products.
Information presented here by Cambridge GaN Devices Limited is believed to be correct and accurate. The information contained herein is provided
without representation or warranty of any kind, whether express or implied. No obligation or liability to the recipient or third party shall arise from
Cambridge GaN Devices Limited providing technical or other services. CGD reserves the right to modify the products and/or specifications described
herein at any time and at Cambridge GaN Devices’ sole discretion.
All information in this document, including descriptions of product features or performance, is subject to change without notice.
©2024 CGD Cambridge GaN Devices www.camgandevices.com Issued 2024-06-07 02
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