physics for XII

TEST: part 2

SECTION : A ( one marks each)

1. The work-function of a photo-electric material is 3.3 eV. The threshold frequency will be equal to -
(a) 8 × 1014 Hz (b) 5 × 1036 Hz (c) 8 × 1010 Hz (d) 4 × 1011 Hz
2. Which is reverse biased diode?

3. White light is incident on the interface of glass and air as shown in figure. If green light is just totally internally reflected, then the
emerging ray in air contains

(a) yellow, orange, red Glas (b) violet, indigo, blue

(c) all colours White (d) all colours except green light
4. In the given diagram if V represent the stopping potential and wavelength of incident light is . If V2 > V1 then -

2
1

V2 V1 O V

(a) 1 = 2 (b) 1 > 2 (c) 1 < 2 (d) none of these

5. The threshold wavelength for photoelectric emission in tungsten is 230 nm. What wavelength of light must be used in order
for electrons to be ejected with a maximum kinetic energy 1.5 eV ?
(a) 179 nm (b) 180 nm (c) 169 nm (d) 170 nm
6. A thin glass (refractive index 1.5) lens has optical power of - 5 D in air. Its optical power in liquid with refractive index 1.7 will be
(a) -1 D (b) +1 D (c) -25 D (d) +25 D
7. The binding energy per nucleon in and are 7.06 MeV and 5.60 MeV respectively,then in the reaction: the
energy of proton must be
(a) 28.24 MeV (b) 17.28 MeV (c) 1.46 MeV (d) 39.2 MeV
8. A moving car of 2000 kg mass and velocity of 30 m/sec has associated de-Broglie wavelength given is -
(a) 10–38m (b) 6.62 × 10–34 m (c) 1.1 × 10–38m (d) 1.1 × 10–38cm
9. In an-type semiconductor, which of the following statements is true?
(a) Electrons are majority carriers and trivalent atoms are the dopants.
(b) Electrons are minority carriers and pentavalent atoms are dopants.
(c) Holes are minority carriers and pentavalent atoms are dopants.
(d) Holes are majority carriers and trivalent atoms are dopants.
10. A proton and an -particle accelerated through same voltage. The ratio of their de-Broglie wavelength will be- 

(a) 1 : 2 (b) 2 2 : 1 (c) 2 :1 (d) 2 : 1

11. In a photoelectric experiment, the stopping-potential for the incident light of wavelength 4000 Å is 2 volt. If the wavelength be
changed to 3000 Å, the stopping potential will be
(a) 2 volt (b) less than 2 volt (c) zero (d) more than 2 volt

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 physics for XII
TEST: part 2

12 An -particle of energy 5 MeV is scattered through 180º by a stationary uranium nucleus. The distance of closest approach
is of the order of -
(a) 1Å (b) 10–10 cm (c) 10–12 cm (d) 10–15 cm
13. If an electron jumps from third orbit to second orbit in hydrogen atom, then the wavelength of emitted photons, will be -
36 5R 4R 34
(a) (b) (c) (d)
5R 36 34 4R
th
14. The energy of an electron in n orbit of hydrogen atom is En= - 13.6/𝑛2 𝑉.The negative sign of energy indicates that
(a) electron is free to move. (b) electron is bound to the nucleus.
(c) kinetic energy of electron is equal to potential energy of electron.
(d) atom is radiating energy.
15. Energy levels A, B, C of a certain atom correspond to increasing values of energy, i.e. EA < EB < EC. If 1, 2, 3, are the
wavelengths of radiations for the transitions C  B, B  A and C  A respectively, which of the following statements
is correct -
1 2
(a) 3 = 1 + 2 (b) 3 = (c) 1 + 2 +3 = 0 (d) 23 = 21 + 22
1   2
SECTION : B ( 2 marks each)
16. The wavelength λ of a photon and the de Broglie wavelength of an electron of mass m have the same value. Show that
the energy of the photon is 2λmc/h times the kinetic energy of the electron, where c and h have their usual meanings.
17. Find Current i in the circuit will be -
20

30

i
20 5V

18. A convex lens of refractive index 1.5 has a focal length of 18 cm in air. Calculate the change in its focal length when it is immersed
4
in water of refractive index .
3
19. A ray of monochromatic light passes through an equilateral glass prism in such a way that the angle of incidence is equal to
the angle of emergence and each of these angles is 3/4 times the angle of the prism. Determine the angle of deviation and
the refractive index of the glass prism.
20. A heavy nucleus X of mass number 240 and binding energy per nucleon 7.6 MeV is split into two fragments Y and Z of mass numbers
110 and 130. The binding energy of nucleons in Y and Z is 8.5 MeV per nucleon. Calculate the energy Q released per fission in MeV.

SECTION : C ( 3 marks each)

21. The total energy of an electron in the first excited state of the hydrogen atom is about –3.4 eV.
(a) What is the kinetic energy of the electron in this state?
(b) What is the potential energy of the electron in this state?
(c) what is the quantum no. of this state.
22. Two semiconductor materials A and B shown in the given figure, are made by doping germanium
crystal with arsenic and indium respectively. The two are joined end to end and connected to a
battery as shown.

(i) Will the junction be forward biased or reverse biased?

(ii) Sketch a V I graph for this arrangement.

23. Distinguish between nuclear fission and fusion. In a fusion reaction.

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 physics for XII
TEST: part 2

2
1 H  3
1 H  42 He  n
calculate the amount of energy in MeV  released, Given m  H   2.014102 u;
2
1 m  H   3.016049 u;
3
1

 
m 42 He  4.002603 u; mm  1.00867 u; 1 u  931.5 MeV / c 2 .
24. derive the expression of energy of electron in nth orbit of hydrogen atom.

SECTION : D ( Case Study : 4 marks)

25. Read the Case Study given below and answer the questions that follow:
Consider a thin p-type silicon (p-Si) semiconductor wafer. By adding precisely, a small quantity of pentavalent impurity, part of
the p-Si wafer can be converted into n-Si. There are several processes by which a semiconductor can be formed. The wafer
contains p-region and n-region and a metallurgical junction between p-, and n- region. Two important processes occur during
the formation of a p-n junction: diffusion and drift. We know that in an n-type semiconductor, the concentration of electrons
(number of electrons per unit volume) is more compared to the concentration of holes. Similarly, in a p-type semiconductor, the
concentration of holes is more than the concentration of electrons. During the formation of p-n junction, and due to the
concentration gradient across p-, and n- sides, holes diffuse from p-side to n-side (p → n) and electrons diffuse from n-side to p-
side (n → p). This motion of charge carries gives rise to diffusion current across the junction.
I. How can a p-type semiconductor be converted into n- type semiconductor?
a) adding pentavalent impurity b) adding trivalent impurity c)not possible d) heavy doping
II. Which of the following is true about n type semiconductor?
a) concentration of electrons is less than that of holes.
b) concentration of electrons is more than that of holes.
c)concentration of electrons equal to that of holes.
d) None of these
III. Which of the following is true about p type semiconductor?
a) concentration of electrons is less than that of holes.
b) concentration of electrons is more than that of holes.
c)concentration of electrons equal to that of holes.
d)None of these
IV. Which of the following is the reason about diffusion current?
a) diffusion of holes from p to n b) diffusion of electrons from n to p
c) both (a) and (b) d) None of these

26. Read the following paragraph and answer the questions that follow.
Types of Lenses and their combination
A convex or converging lens is thicker at the centre than at the edges. It converges a beam of light on refraction through it. It
has a real focus. Convex lens is of three types: Double convex lens, Plano convex lens and Concavo-convex lens.
Concave lens is thinner at the centre than at the edges. It diverges a beam of light on refraction through it. It has a virtual
focus. Concave lenses are of three types: Double concave lens, Plano concave lens and Convexo-concave lens.
When two thin lenses of focal lengths f1 and f2 are placed in contact with each other along their common principal axis, then
the two lens system is regarded as a single lens of focal length f and

If several thin lenses of focal length f1, f2, .... fn are placed in contact, then the effective focal length of the combination is given
by

and in terms of power, we can write

P = P1 + P2 + .... + Pn
The value of focal length and power of a lens must be used with proper sign consideration.

I. Two thin lenses are kept coaxially in contact with each other and the focal length of the combination is 80 cm. If the focal
length of one lens is 20 cm, the focal length of the other would be
(a) -26.7cm (b) 60cm (c) 80cm (d) 30cm
II. A spherical air bubble is embedded in a piece of glass. For a ray of light passing through the bubble, it behaves like a
(a) converging lens (b) diverging lens (c) mirror (d) thin plane sheet of glass
III. Lens generally used in magnifying glass is
(a) single concave lens (b) single convex lens

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 physics for XII
TEST: part 2

(c) combination of convex lens of lower power and concave lens of lower focal length (d) Planoconcave lens
IV. The magnification of an image by a convex lens is positive only when the object is placed
(a) at its focus F (b) between F and 2F (c) at 2F (d) between F and optical centre
OR
A convex lens of 20 cm focal length forms a real image which is three times magnified. The distance of the object from the
lens is
(a) 13.33 cm (b) 14 cm (c) 26.66 cm (d) 25 cm
SECTION : E ( 5 MARKS)

27. (a) Draw a ray diagram for the formation of image of a point object by a thin double convex lens having radii of curvature
R1 and R2. Hence derive lens maker’s formula.
(b) A ray of light passing from air through an equilateral glass prism undergoes minimum deviation when the angle of incidence is 3/4 th
of the angle of prism. Calculate the speed of light in the prism.
OR
(a) Define magnifying power of an optical telescope. Draw a ray diagram for an astronomical refracting telescope in normal
adjustment .Derive an expression for its magnifying power.
(b). the magnification of telescope in normal adjustment is 9. And its tube length is 20 cm. find focal length of the lenses.
28. (a) Name the device which utilizes unilateral action of a pn diode to convert ac into dc.
(b) Draw the circuit diagram of full wave rectifier.
(c) draw the input and output waveform and explain briefly.
OR
Draw the circuit diagram to obtain V-I chractristic of p-n diode in forward and reverse bias.Draw characteristic curve and
explain.

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