An Overview of Micro-Force Sensing Techniques
An Overview of Micro-Force Sensing Techniques
Review
a r t i c l e i n f o a b s t r a c t
Article history: Due to the trend of miniaturization of devices, micromanipulation has been a hot topic in the last two
Received 2 February 2015 decades. Unlike the macro world, the micro object is easy to be damaged if the contact force is not reli-
Received in revised form 9 August 2015 ably detected and controlled. Hence, micro-force sensing is of great importance in micromanipulation,
Accepted 19 September 2015
microassembly, medical applications, biomedical applications, materials science, dimension measure-
Available online 25 September 2015
ments and MEMS/NEMS for protecting micro-parts and micro-gripper from being damaged and ensuring
the success of the manipulation process. This paper presents a survey of the recent methods of micro-
Keywords:
force sensing. The working principle, detection accuracy, advantage and disadvantage of seven widely
Micro-force sensing
Force sensors
used force sensing methods are presented. Typical applications of each method in micro-assembly and
Micro-assembly micromanipulation are discussed. In addition, the comparisons among different kinds of force sensing
Micromanipulation approaches have been addressed. Moreover, another five promising micro-force sensing methods, which
are confined to special component measurements or not widely used, are briefly introduced. Furthermore,
two popular types of commercial micro-force sensors are listed to provide a guideline of selection for a
specific application. The presented state-of-the-art overview is helpful to those engaged in micro-force
sensing area to know the recent development and research tendency on micro-force sensing.
© 2015 Elsevier B.V. All rights reserved.
Contents
1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360
2. Force-sensing method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360
2.1. Strain gauge-based force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360
2.2. Piezoresistive force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361
2.3. Capacitive force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363
2.4. Piezomagnetic force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364
2.5. Optical force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364
2.6. Vision-based force sensor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .365
2.7. Electroactive force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .366
2.7.1. PZT force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 366
2.7.2. PVDF force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 367
2.7.3. Comparison between PZT and PVDF force sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
2.8. Other techniques for micro-force sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
2.8.1. IPMC force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
2.8.2. Inductive micro-force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
2.8.3. Electrodynamic force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
2.8.4. Microresonator force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
2.8.5. Acoustic force sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
3. Commercial micro-force sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370
3.1. FT-S micro-force sensing probe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .370
3.2. The AE801 series sensor element produced by Kronex . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 371
http://dx.doi.org/10.1016/j.sna.2015.09.028
0924-4247/© 2015 Elsevier B.V. All rights reserved.
360 Y. Wei, Q. Xu / Sensors and Actuators A 234 (2015) 359–374
4. Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 372
Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 372
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 372
Biography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 374
Fig. 1. Working principle of strain-gauge based force sensors. (a) Schematic diagram of strain [6], (b) stress and strain curves [6].
Fig. 4. (a) Working principle of piezoresisitive force sensors. (b) Schematic of a piezoresistive pressure sensor [32].
Fig. 5. Schematic diagram of a micro tri-axial piezoresistive force sensor. (a) Piezoresistor arrangement on the crossbeam. (b) Wheatstone bridge connection mode [33].
Usually, a Wheatstone bridge is used for translating the variation in general. However, the resistance variation is not easily directly
of resistance into an analog voltage. detected and is delicate to the variation of temperature. Further-
Strain gauges are usually glued on the part where the defor- more, the gluing quality of strain gauge greatly affects the accuracy
mation is the most important [28]. Piezoresistive force sensors of the measurement [31]. It also has certain limitation in miniatur-
generally have smaller lateral dimensions and can reach a higher ization for micromanipulation and micro-assembly tasks.
output per area than metal strain gauges. Silicon and other semi- As shown in Fig. 5, a schematic diagram of a micro tri-axial
conductor materials have high piezoresistive responses while they piezoresistive force sensor is introduced. The piezoresistors could
are brittle and fragile [29]. To achieve mechanical flexibility, the be developed using deposited polysilicon or metal layers [33]. In
piezoresistive force sensor can be embedded into an elastomer order to measure these forces individually, these piezoresistors are
while its sensitivity decreases and ambiguity is introduced. Piezore- linked to three Wheatstone bridge circuit configurations to gain the
sisitive force sensors are highly sensitive correspondingly and the resistance changes, which is similar to strain gauge force sensor.
noise characteristics have been well studied [30]. The methods of Moreover, the temperature compensation is also necessary.
measuring resistance variation with piezoresisitive force sensors In the literature, Peiner et al. [34] integrated a piezoresistive
are simple, mature and have wide measuring range. The detecting amorphous carbon (a-C) strain-gauge into a silicon micro cantilever
accuracy of piezoresistive sensor is on the level of mN or sub-mN force sensor successfully. Amorphous carbon combines favorable
mechanical properties like wear resistance and hardness with a
large piezoresistive effect, which is very promising. They stud-
ied the linear characteristics of the strain gauge resistance versus
the applied force, finding the piezoresistive gauge factor of a-
C nearly 70, which is a high sensitivity. Mohammed et al. [35]
designed a MEMS-based strain sensor, which has high sensitivity,
low power consumption and high absolute resolution. What more,
these characters maintain a high stability during a wide tempera-
ture range. Yuan et al. [36] designed a micro-pressure sensor with
two island beam structures, which has high sensitivity, good linear-
ity and high ability of anti-overload. Gnerlich et al. [37] designed a
piezoresistive force sensor integrated into a microelectromechan-
ical system (MEMS) on a 4 mm by 4 mm chip for the fast study of
some important characters of cell, which is highly sensitive and can
be submerged directly in cell medium. More importantly, the force
sensor can be used in mass production, which is of great meaningful
for detecting the cell, despite of self-heating problem, resulting sub-
sequent measurement drift. The structure is shown in Fig. 6. Payne
et al. [38] designed a hand-held force-amplifying device using a
piezoresistive force sensor, considering it’s immune to magnetic.
Fig. 6. The structure of a piezoresistive force sensor integrated into a microelec- Rathore et al. [39] designed a CMOS-MEMS integrated pressure
tromechanical system (MEMS) on a 4 mm by 4 mm chip [37].
Y. Wei, Q. Xu / Sensors and Actuators A 234 (2015) 359–374 363
Fig. 9. The structure of the capacitive force sensor measuring force and displace-
ment simultaneously [50].
Capacitive force sensors provide an effective method in measur- Fig. 10. The structure of the capacitive force sensor with a displacement reduction
mechanism [51].
ing micro forces, due to their ability to measure forces from mN to
pN level [40–45]. It has been stated that more than 30% of modern
sensors are direct or indirect applications of the RC (Resistive and
Capacitive) sensing principles [44]. Capacitive force sensors mea- MEMS capacitive force sensors usually employ the parallel-flat
sure the force by changing the distance d between the plates in configurations (single or dual-plate). Moreover, the capacitance
the capacitor, which can be seen from the Fig. 8. Capacitance-to- varies through the variable distance between plates (or other
frequency converters (oscillators), switched-capacitor circuits, or parameters altering the electric field) caused by a mechanical force,
capacitive ac-bridges can be used to detect the output of capaci- which can be obtained easily. As shown in Fig. 7 [33], a schematic
tive force sensors [46]. As compared with piezoresistive sensors, diagram of a two-axial MEMS capacitive force sensor design is
capacitive sensors have low energy consumption, higher sensi- realized. In addition, differential comb is utilized to attain a high
tivity, a good frequency response, high spatial resolution, and sensitivity and linear input-output relation.
large dynamic range, and they are not sensitive to the changes of In the literature, Chu et al. [50] designed a capacitive force sensor
environment, etc. Moreover, capacitive force sensors are famous with a displacement reduction mechanism to improve the sensi-
for their fantastically large bandwidth, robustness and drift-free tivity, considering that the sensitivity of capacitive sensor tends to
measurement capability. Its detection accuracy can be achieved decrease as the magnitude of the force or displacement increases.
in micro-newton or sub-micro-newton [47]. Moreover, capacitive The structure is shown in Fig. 9. Zhang et al. [51] designed a single-
force sensors could be inserted into MEMS—based microgrippers, axis active probing device actuated by linear comb drives, which
which enables the mass production [48]. However, capacitive force generates the motion in the probing direction and also senses the
sensors are more sensitive to noise and require complex electronics displacement and force as the probe moves. The structure is shown
to filter out the noise [49]. in Fig. 10.
Fig. 8. (a) A capacitive force sensor can measure normal and shear stress [21]. (b) The simple structure of a capacitive force sensor.
364 Y. Wei, Q. Xu / Sensors and Actuators A 234 (2015) 359–374
Fig. 16. (a) A system of an vision-based force sensor [69]. (b) Setup of the force sensor [69].
366 Y. Wei, Q. Xu / Sensors and Actuators A 234 (2015) 359–374
Table 1
Properties of electronic and ionic EAPs [76].
Fig. 24. The structure of soft bending pneumatic actuator with PVDF force sensor
[75].
Table 2
Physical properties of PZT and PVDF [96].
Table 3
Physical properties of polymers and a ferroelectric [88].
Fig. 30. SAW transducer with two banks of four OFC reflectors and antenna [16].
bility. Furthermore, it can be used as either actuators or sensors. Some micromechanical resonators are manufactured utilizing
Yet, controlling a somewhat complicated material as mechanical, the “epi-seal” process in single crystal silicon and encapsulated
electrical and chemical properties interacting with each other in with epitaxially deposited polysilicon [99], which show a high per-
the ionic polymer remains a challenging issue [76]. What more, formance (Fig. 29).
disadvantages of their time-varying performance and mechanical
hysteresis in IPMC materials cannot be neglected.
2.8.5. Acoustic force sensor
2.8.2. Inductive micro-force sensor An acoustic force sensor is a facility in which an (ultra) sonic
Inductive force sensors are based on variable inductance, which signal is utilized as an intermediate media between its input (force)
can be caused by different factors, such as variation of transformer, and output. There are many acoustic methods to measure the force.
reluctance, impedance and mutual inductance [97]. Moreover, a And the surface acoustic wave (SAW) method is very primary.
special inductive force sensor turns to integrate a position sensor As shown in Fig. 30, A SAW force sensor that uses four orthogonal
with a force-to-displacement converter to measure the force [97]. frequency coded (OFC) reflectors in two same banks [16]. The radio
The detect accuracy of inductive force sensors are in mN level [16] frequency (RF) energy is gathered by the antenna and then turned
(Fig. 27). into mechanical waves from electrical energy by the interdigital
transducer (IDT) on the surface of the material. The IDT is bidirec-
tional and hence produces waves in two directions. The waves go
2.8.3. Electrodynamic force sensor across the substrate and meet the four reflector gratings contained
Electrodynamic force sensor relies on the principle of electro- in each reflector bank. The waves are reflected back to the IDT in
magnetic force compensation (EMFC) (see Fig. 28). It is universally different time delays (sD1 and sD2) and then turned into electri-
acknowledged that a force will be generated when current flow in cal energy. And the electrical energy is radiated out of the antenna
a magnetic field. The generated force will be proportional to the as RF energy [16]. This variation in the SAW transducer frequency
current if the magnetic field B and the path length L are constant, is proportional to the force applied on the surface. The detecting
which can be utilized to sense the force. Lorentz force induced by accuracy of inductive force sensors are in mN level.
a current in a coil and a magnetic field of a permanent magnet are
used to compensate for the applied force. The detecting accuracy
of inductive force sensors are in uN level [16]. 3. Commercial micro-force sensors
2.8.4. Microresonator force sensor In order to help readers engaged in the area of micro-force sens-
The resonant force sensors rely on measuring the change in ing to know the existing commercial micro-force sensors, two kinds
the resonant frequency of an elastic element, according to the fact of widely adopted micro-force sensors are listed below.
that the resonant frequency of a vibrating micromechanical struc-
ture is greatly sensitive to some specific parameters, e.g. resonator
stiffness or geometry. 3.1. FT-S micro-force sensing probe
Electromechanical resonators possess wonderful stability and
potentially low hysteresis [98]. These digital force sensors have As show in Fig. 31, the FemtoTools FT-S Microforce Sensing
some outstanding advantages—the output can be measured pre- Probes are micro-force sensors capable of measuring compres-
cisely without the necessity of expensive frequency counters; high sion and tension forces. And its measurement range is from 100
immunity to the change in electrical characteristics with time; high millinewtons (0.1 N) down to several nanonewtons (10 −9 N) along
immunity to degradation of transmitted signals by electrical inter- the sensor’s probe axis, as tabulated in Table 4. These force sensors
ference. The detecting accuracy of inductive force sensors are in have outstanding long-term stability and low signal drift guaran-
mN and sub-mN levels. tees.
Y. Wei, Q. Xu / Sensors and Actuators A 234 (2015) 359–374 371
Table 4
Commercial micro-force sensors produced by FemtoTools.
Table 5
Properties of seven widely used micro-force sensors.
Piezoresisitive force change in resistance mN or sub-mN • simple and easy to use • sensitive to temperature
sensor • wide measuring range • rigid and fragile
• methods are mature • higher power consumption
• wide measurement range • hysteresis
• maintenance-free • lower repeatability
• high spatial resolution • limitation in miniaturization
Capacitive force sensor change in capacitance mN or sub-mN • low energy consumption • complicated circuit
• high sensitivity • susceptible to noise
• good spatial resolution
• flexibility to environment
• embedded monolithically
• large bandwidth
• robustness
• drift-free
Piezomagnetic force magnetoelastic effect mN or sub-mN • simple to install • relatively low amplitude of output
sensor • suitable for both dynamic force and voltage
static force
• simple amplification circuit
• good ability to resist overload
• strong anti-interference ability.
Optical force sensor light intensity or 0.01 to 1000 pN • high spatial resolution for static and • high cost
spectrum change dynamic measurements • bulky
• good reliability • low measurement range
• high repeatability
Vision-based force compare images of mN or sub-mN • easy to implement • low depth of focus
sensor putting stress and not • measure static force reliably • small dynamics range
• adaptability with existing elastic • bad flexibility
parts • expensive
• high measurement range • bulky
3.2. The AE801 series sensor element produced by Kronex (see Fig. 32). It is easy to mount, reliable, and greatly accurate. The
sensor element has many applications, such as R&D, medical, indus-
The AE801 series sensor element is designed to measure trial control, and instrumentation. The AE801 is most often used to
mechanical properties such as position, force, and acceleration. The measure small forces, and it works well when measuring forces as
sensor is composed of a silicon strain gauge with one ion implanted small as 1 micro-newton.
resister on each side and is mounted in a special miniature header
372 Y. Wei, Q. Xu / Sensors and Actuators A 234 (2015) 359–374
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microfabricated tactile sensor for minimally invasive surgery, Heilongjiang, China, in 2014. He is currently working
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Measurement, Computer, Communication and Control (IMCCC), Third University of Macau, Macao, China, in 2004 and 2008,
International Conference on 2013, 2015, pp. 1253–1256. respectively. He was a visiting scholar with the Swiss Fed-
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sensor for human monitoring system by using P(VDF/TrFE) thin film, in: and the National University of Singapore, Singapore. He
Emerging Trends in Engineering and Technology (ICETET), Fifth is currently an Associate Professor with the Department
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4743–4748. micro-/nanosystems, micro-/nanomechatronics, smart
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