ECA01 - SEMICONDUCTOR DEVICES

Syllabus

ECA01 SEMICONDUCTOR DEVICES 3 0 2 4

Prerequisite NIL

1. To impart the knowledge of conduction mechanism in

Course semiconductors
Objectives
2. To provide a strong foundation on the construction and operating
principles of various semiconductor devices.
3. To enable the students to differentiate the characteristics of
semiconductor devices based on the parameters.
4. To emphasis on the significance and applications of various
semiconductor devices in the field of electronics and
communication Engineering.

Course On successful completion of the course, the student will be able to:

Outcomes 1. Ability to apply basic knowledge of semiconductor ballistics

2. Apply the knowledge on PN Junction diode for applications
3. Ability to calculate current amplification factors for bipolar junction
transistor
4. Learn the operation of Field Effect transistor and thyristor families
5. Acquire knowledge of fabrication process of semiconductor devices
6. Apply the knowledge on semiconducting devices for various
applications

SEMICONDUCTOR THEORY
Ø Introduction to physical properties of elements

Ø Passive Circuit components

Ø Review of quantum mechanics

· Schrodinger wave equation

Ø Classification of semiconductor

Ø Conduction in semiconductor

· drift and diffusion current

· Charge densities in semiconductor

· Energy band

· E-K diagrams

· Fermi level in semiconductors

· Continuity Equation

· Carrier Life time

SEMICONDUCTOR DIODES
Ø PN Junction diode

· Construction

· Operation

· Band structure

· Breakdown in PN diode

· Transition & diffusion capacitances

· Effect of Temperature

· Poisson Equation of PN Diode

· Model of diode

Ø Applications of diode

· Diode as switch

· Rectifier

· Clipper

· Clamper

· Voltage Multiplier

Ø Zener Diode

· Construction

· Operation

· Breakdown in Zener diode

· Voltage regulator

Ø Schottky diode

Ø Photodiodes

Ø LED and LCD

Ø Phototransistors

Ø Solar cell
BIPOLAR JUNCTION TRANSISTORS

Ø Transistor

· Construction and operation of NPN and PNP transistor

· Configurations – CB,CE and CC – input and output characterstics

· Ebers Moll Model

· Thermal run away & Heatsink

· H-parameters

· Transistor as amplifier

FET & THYRISTORS

Ø Junction Field Effect Transistor

· Construction and operation
· Transfer and Drain characteristics
· Parameter of JFET

Ø Metal oxide Field Effect Transistor (MOSFET)

· Construction and operation
· Transfer and drain characteristics
· MOSFET as resistor
· Handling precaution of MOSFET
· Small signal models of MOSFET

Ø Thyristors (SCR,TRIAC and DIAC)

· Construction and operation
· Voltage – Current characteristics

Ø UJT and PUT

· Construction and Operation
· Voltage – current characteristics.

INTEGRATED CIRCUIT FABRICATION PROCESS

Ø Fabrication process

· Photolithography

· Chemical Vapor deposition

· Sputtering

· Twin – Tub CMOS Process

Text Books /

1. Jacob Millman and Christos C.Halkias, “Electronic Devices and Circuits”, Tata
McGraw Hill, 1991.
2. S. Salivahanan & N. Suresh Kumar, “Electron Devices & Circuits”, second Edition,
Tata Mcgraw Hill, New Delhi, 2011
3. G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition,
Pearson,2014.

References
1. D. Neamen , D. Biswas "Semiconductor Physics and Devices," McGraw-Hill
Education
2. S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John
Wiley &Sons, 2006.
3. C.T. Sah, “Fundamentals of solid state electronics,” World Scientific Publishing Co.
Inc, 1991.
4. Y. Tsividis and M. Colin, “Operation and Modeling of the MOS Transistor,” Oxford
Univ.Press, 2011.
S.N Assignment Questions Batch
o

SEMICONDUCTOR THEORY

1 For a particular semiconductor material, NC = 1.5 x 1018 Batch

cm−3, NV = 1.3 x 1019 cm−3 and -1

EG = 1.43 eV at T = 300°K.

(a) Determine the position of the intrinsic Fermi level

with respect to the center of the bandgap. What is the
position of the Fermi level with respect to the top of the
valence band EV?

(b) Find the intrinsic carrier concentration of the

semiconductor at T = 300°K.

(c) Determine effective masses mn and mp of electron and

hole respectively.

2 (a) Determine the concentration of free electrons and Batch

holes in a sample of germanium at 300°K -2

which has a concentration of donor atoms equal to 2

x1014 atoms/cm3 and a concentration of acceptor atom
equal

to 3 x 1014 atoms/cm3. Is this p- or n-type germanium? In

other words, is the conductivity due primarily to holes or
to electrons?

(b) Repeat part (a) for equal donor and acceptor

concentrations of 1015 atoms/cm3. Is this p-or n-type
germanium?
 (c) Repeat part (a) for a temperature of 400°K, and show
that the sample is essentially intrinsic.

(d) Repeat part (a) for a donor concentration of 1015

atoms/cm3 and zero acceptor concentration.

3 Consider intrinsic germanium at room temperature Batch

(300°K). By what percent does the conductivity increase –3
per degree rise in temperature

4 (a) For a particular semiconductor, the effective mass of Batch

electron is mn = 1.4 m. If EC − EF = 0.25 eV, determine the -4
effective density of states in the conduction band and
concentration of electrons in the semiconductor at T =
300°K. (b) Repeat part (a) for T = 400°K

5 The effective masses of electron and hole in germanium Batch

are mn = 0.55 m and mp = 0.37 m respectively. Find the -5
position of the intrinsic Fermi level in germanium at
300°K.

6 For a particular semiconductor material, NC = 1.5 ¥ 1018 Batch

cm−3, NV = 1.3 ¥ 1019 cm−3 and EG = 1.43 eV at T = -6
300°K. (a) Determine the position of the intrinsic Fermi
level with respect to the center of the bandgap. What is
the position of the Fermi level with respect to the top of
the valence band EV? (b) Find the intrinsic carrier
concentration of the semiconductor at T = 300°K. (c)
Determine effective masses mn and mp of electron and
hole respectively.
7 (a) Determine the concentration of free electrons and Batch
holes in a sample of germanium at 300°K which has a -7
concentration of donor atoms equal to 2 ¥ 1014
atoms/cm3 and a concentration of acceptor atom equal
to 3 ¥ 1014 atoms/cm3. Is this p- or n-type germanium?
In other words, is the conductivity due primarily to holes
or to electrons?

(b) Repeat part (a) for equal donor and acceptor

concentrations of 1015 atoms/cm3. Is this p-or n-type
germanium?

(c) Repeat part (a) for a temperature of 400°K, and show

that the sample is essentially intrinsic.

(d) Repeat part (a) for a donor concentration of 1015

atoms/cm3 and zero acceptor concentration

8 Consider a rectangular cross-sectional semiconductor bar Batch

with length l = 12 mm, width w = 5 mm and thickness d = -8
4 mm which is placed in the coordinate system as shown
in given Fig. The positive and negative terminals of a
battery of voltage Vd = 5 V are connected between the
two cross-sectional surfaces of the bar at x = 0 and x = l
respectively. A magnetic field B = 6 ¥ 103 Gauss is applied
perpendicular to the bar along the +Z-direction.
(a) If the bar is of n-type semiconductor with
electron concentration nn = 2.5 ¥ 1015 cm−3, and
the current flowing through the bar is I = 10 mA,
determine the magnitude and polarity of the Hall
voltage between the terminal 1 and 2 (see given
Fig) Also find the value of the Hall coefficient.
(b) Repeat part (a) for a p-type semiconductor bar with
hole concentration pp = 2.5 ¥ 1015 cm−3.

(c) If Hall voltage is VH, derive an expression for the

mobility of majority carrier in terms of VH, applied
voltage Vd and dimensions of the semiconductor bar.
 (a) Derive an expression for the electron current
9 Batch
Inn(x) in the n-type material (see given figure) of a
-9
p-n junction diode.

(b) Consider a silicon p-n junction with cross-sectional

area of 1024 cm2. The doping concentration, mean
lifetime and mobility of an electron in the p-type silicon
at 300°K are given as: NA = 2.5 ¥ 1015 cm23, tn = 1026
sec, mn = 1350 cm2/V sec respectively. Similarly, the
donor concentration, mean lifetime and mobility a hole in
the n- type silicon at 300°K are given as: ND = 5 ¥ 1016
cm23, tp = 1027 sec, and mp = 325 cm2/V sec
respectively. Assume that the intrinsic car‑ rier
concentration of silicon ni = 1.5 ¥ 1010 cm23 at 300°K.
Starting from Eq. (5.27), express the reverse saturation
current Io in terms of the parameters described above for
the diode. Also calculate the reverse saturation current
for the above specified values of the diode parameters.
Calculate the total current (I) for a forward bias voltage of
0.6 V.
 (a) Consider the p-n junction shown in given Fig.
10 Batch
Derive the expression for the total depletion width
- 10
W = Wp + Wn in terms of Vo, V, NA and ND for the
case when NA is comparable with ND.

SEMICONDUCTOR DIODES
 a. A diode whose internal resistance is 20 W is to supply
1 Batch
power to a 1 kW load from a 110 V (rms) source of
1
supply. Calculate (a) the peak load current, (b) the dc
load current, (c) the ac load current, (d) the dc diode
voltage, (e) the total input power to the circuit, ( f ) the
peak inverse voltage, and (g) the percentage regulation
from no load to the given load.

b. A single-phase full-wave rectifier use semiconductor

diodes. The transformer voltage is 35 Vrms to center
tap. The load consists of a 40 mF capacitor in parallel
with a 250 W resistor. The diode and transformer
resistances and leakage reactance may be neglected.
Assume that the power-line frequency is 50 Hz.
Calculate
(i) The dc current Idc in the circuit.
(ii) Peak-to-peak amplitude of the ripple voltage, Vr.
(iii) The rms value of the ripple voltage, Vrms.
(iv) Ripple factor of the rectifier-filter output, r.
(v) Repeat parts (i), (ii), (iii) and (iv) for the case when
the load consists of a 100 mF capacitor in parallel with
a 250 W resistor.
( vi ) Repeat parts (i), (ii), (iii) and (iv) for the case when
the load consists of a 40 mF capacitor in parallel with a
2000 W resistor.
(g) Compare the percentage regulation of the power
supply for the values of Idc of part (v) and (vi).
 a. For the characteristics of figure
2 Batch
i. Determine the ac resistance at ID = 2Ma
2
ii. Determine the ac resistance at ID = 25mA
iii. Compare the results of parts (a) and (b) to the dc
resistance at each level

b. Determine Vo, I1, ID1, and ID2 for the parallel diode
configuration of for the following figure
3 Determine the output waveforms for the network of Batch
Figure 3

a)

b)
4 Consider the two-level clipper circuit of in the following Batch
Figure and assume that VS1 = 3 V, VS2 = 2 V, D1 is a 4
silicon diode with Vg 1 = 0.65 V, D2 is a germanium diode
with Vg 2 = 0.3 V, and R = 3 kW. Draw the output
waveform of the circuit as a function of a = wt
corresponding to an input signal vi = 5 sin (a) (volts) over
one period when the polarities of the dc source VS2 are
reversed. Neglect the effect of the forward resistances of
diode.

5 Two identical and ideal zener diodes D1 and D2 with Batch

breakdown voltage of 15V are connected back-to-back as 5
shown in the figure. Draw to scale the input and output
waveforms of the circuit corresponding to a sinusoidal
input vi = 25 sin wt.
6 Consider a Zener regulator circuit as shown in following Batch
figure where Vs = 45 V, RS = 1 kW and D3 is an ideal 6
Zener diode with VZ = 10 V and maximum current rating
IZ max = 30 mA.
a. Determine the range of RL and IL that will result in VL
being maintained at 10 V.
b. Determine maximum wattage rating of the Zener
diode as a voltage regulator.
c. If the diode is not ideal and has a dynamic resistance
of 20 W, calculate Zener current and the load current
in the circuit for RL = 1 kW.

a. Determine vo for the network

7 Batch
7

b. Determine vo for the network

8 a. Batch
8
i) For the Zener diode network of the following figure,
determine VL, VR, IZ, and PZ. ii) Repeat part (a) with RL
= 3 k ohm

b. i)For the network of Fig. 2.113, determine the range of

RL and IL that will result in VRL being maintained at 10 V.

ii)Determine the maximum wattage rating of the diode

 a. Determine the range of values of Vi that will maintain
9
the Zener diode of the following figure in the “on”
state.

i) For the network of Figure, determine the range of RL

and IL that will result in VRL being maintained at 10 V.
Determine the maximum wattage rating of the diode.

10 A crystal diode having internal resistance rf = 20Ω is used Batch

for half-wave rectification. If the applied voltage v = 50 10
sin ω t and load resistance RL= 800 Ω, find : Im, Idc, Irms (ii)
a.c. power input and d.c. power output (iii) d.c. output
voltage (iv) efficiency of rectification.
a. A half-wave rectifier is used to supply 50V d.c. to a
resistive load of 800 Ω. The diode has a resistance of
25 Ω. Calculate a.c. voltage required.
b. A full-wave rectifier uses two diodes, the internal
resistance of each diode may be assumed constant at
20 Ω. The transformer r.m.s. secondary voltage from
centre tap to each end of secondary is 50 V and load
 resistance is 980 Ω. Find : (i) the mean load current
(ii) the r.m.s. value of load current.

BIPOLAR JUNCTION TRANSISTORS

1 A BJT has IC = 1 mA and IB = 10 µA. What are IE, βF, and αF? Batch
-1
2 The LED in Figure requires 30 mA to emit a sufficient
level of light. Therefore, the collector current should be
approximately 30 mA. For the following circuit values,
determine the amplitude of the square wave input
voltage necessary to make sure that the transistor
saturates. Use double the minimum value of base current
as a safety margin to ensure saturation. VCC = 9 V, VCE(sat) =
0.3 V, RC = 270 Ω, RB = 3.3 kΩ, and βDC = 50.

3 Determine the dc current gain βDC and the emitter current Batch
IE for a transistor where IB = 50 µA and IC = 3.65 mA.. -2
4 Determine the currents IE and IB and the voltages VCE and
VCB for the common-base configuration given in fig ,
suppose RE = 1.2K, RC = 2.4K, VEE = 4V, VCC = 10V and β =
60.

5 Determine IB, IC, IE, VBE, VCE, and VCB in the circuit. Assume Batch
βDC = 150. -3
6 Determine whether the transistor in Figure is in
saturation. Assume VCE(sat) = 0.2 V.

7 (a) For the transistor circuit in Figure, what is VCE when VIN = 0 V? Batch
(b) What minimum value of IB is required to saturate this transistor if βDC is -4
200? Neglect VCE(sat).

(c) Calculate the maximum value of RB when VIN = 5 V.

8 Determine VCEQ and IEQ for the common collector
(emitter-follower) configuration suppose RB = 240K, RE =
2K, VEE = -20V.

9 (a) Suppose that the n-p-n transistor in Fig. is of Batch

germanium with BVEBO = 10V and ICBO = 90 mA. For VBB = -5
8V and Rb = 9 K, verify whether the transistor is in cut off.

(b) What should be the maximum allowable value of Rb

to keep the transistor of part (a) in the cut off region?

(c) Repeat part (b) for a silicon transistor with BVEBO =

15V and ICBO = 50 mA.
10 (a) Consider the transistor circuit of Fig. . For VCC = 10V,
VBB = 5V, VBE = 0.7V, Rb = 10K, Rc = 500 W, Re = 100 W and
hFE = 100, calculate IB, IC, IE, VCB and VCE.

(b) If VBB is varied while maintaining other parameters

unchanged in part (a), what is the minimum VBB
required to drive the transistor into saturation? Assume
that the collector-emitter voltage of the transistor at the
saturation region is VCE (sat) = 0.3V.
11 (a) A silicon transistor with VCE (sat) = 0.2V, = hFE = 100, Batch
VBE (sat) = 0.8V is used in the circuit shown in Fig. . Find -6
the minimum value of RL for which the transistor is in
saturation. Assume IE a IC,VBB = 12V and VCE = 10V.

(b) Determine voltage V0 at saturation for RL = RLmin, the

minimum value of RL, for which the transistor remains in
saturation.

(c) What happens to the saturation state of the transistor

if the collector bias voltage is changed from 10V to VCC =
15V in part (a) while maintaining other parameters
unchanged? Calculate VCE and V0 for RL=15K > RLmin.

12 Consider the transistor circuit shown in Fig. where VCC =

20V, Rc= 5K, Re= 270 W and VBE = 0.7V. If VCE = 5V, find
the value of R. Assume that the circuit uses a silicon
transistor with β = 50.
13 If the silicon transistor used in the circuit shown in Fig. Batch
has a minimum value of β = hFE of 30, -7

(a) Determine whether the transistor is in the cutoff,

active or saturation region for V1=12V,V2= 212V, VCC =
12V, R1 = 15K, R2 = 100 K, and RC = 2.2 K. Also find V0.

(b) Find the minimum value of R1 for which the

transistor in part (a) is in the active region. Compute V0
for R1 = 50K.

(c) If R1=15K and V1 = 10Vin part (a), find the minimum

value of V2 required to drive the transistor into the cutoff.

(d ) Show that the transistor in part (a) will be in cutoff

for V1 = 1V and V2 = 212V.
14 Using the characteristics of Fig.

(a) Find the value of IC corresponding to VBE=750 mV and

VCE=5 V.

(b) Find the value of VCE and VBE corresponding to IC =3

mA and IB =30 µA.

15 (a) Find the collector current for a transistor when both Batch
emitter and collector junctions are reverse-biased. -8
Assume ICO = 5 mA, IEO = 3.57 mA, and aN = 0.98.

(b) Find the emitter current IE under the same conditions

as in Part (a).
16 The transistor of Fig, has β=100. Determine the region of
operation and the values of IB,IC and VCE for RB equal to (i)
500kΩ and (ii) 120 kΩ. Neglect reverse saturation
current.

17 The transistor in Fig. has β = 100 and ICBO=20nA. Calculate

IB,IC,VCE and hence decide in which region the transistor
operates. Given VBEactive= 0.7v ; VBEsat=0.2v; VCEsat=0.2v.
18 Suppose the transistor of Fig has β=hFE=100. Find (i) Batch
whether the transistor is operating in the active, -9
saturation or cut-off region. (ii) The value of output
voltage Vo. Assume ꟾVBEꟾ=0.7v and ꟾVCEꟾ=0.2V.

19 A transistor is operated at a forward emitter current f 2 Batch

mA and with the collector open circuited. Find (a) the - 10
junction voltages Vc and VE, (b) the collector-to-emitter
voltage VCE.

Assume ICO = 2 mA, IEO = 1.6 mA, aN = 0.98. Is the

transistor operating in saturation, at cut off, or in the
active region?
20 a) A transistor has a dc current gain of 200. If the base
current is 10 mA, calculate the value of the collector
current. What is the value of dc alpha?

b) Calculate the dc alpha and dc beta given that IC = 0.1

mA and IB = 2.5mA .

FET & THYRISTORS

1 An NMOS transistor is fabricated in a 0.13-µm CMOS Batch

process with L = 1.5Lmin and W = 1.3 µm. The process -1
technology is specified to have tox = 2.7 nm, μn = 400
cm2/V·s, and Vtn = 0.4 V.
(a) Find Cox, kn, and kn.
(b) Find the overdrive voltage VOV and the minimum
value of VDS required to operate the transistor in
saturation at a current ID = 100 µA. What
gate-to-source voltage is required?
(c) If vDS is very small, what values of VOV and VGS are
required to operate the MOSFET as a 2-k resistance? If
VGS is doubled, what rDS results? If VGS is reduced, at
what value does rDS become infinite?
 An NMOS transistor fabricated in a process for which the
2 Batch
process transconductance parameter is 400 µA/V2 has its
-2
gate and drain connected together. The resulting
two-terminal device is fed with a current source I as
shown in Fig. 5.3.1. With I = 40 µA, the voltage across the
device is measured to be 0.6 V. When I is increased to 90
µA, the voltage increases to 0.7 V. Find Vt and W/L of the
transistor. Ignore channel-length modulation.

3 The data sheet for a 2N2646 Unijunction Transistor gives Batch

the intrinsic stand-off ratio η as 0.65. If a 100nF capacitor -3
is used to generate the timing pulses, calculate the timing
resistor required to produce an oscillation frequency of
100Hz.

4 Design a Double Gate Security System Based on RFID Batch

Technology using TRIAC circuits. -4

5 Show that if a FET is operated at sufficiently low drain Batch

voltage, it behaves as a resistance R given by R = R0 / [1- -5
(VGS / VP)1/2] Where R0 is the channel resistance for
zero gate voltage.
(ii) Obtain low frequency and high frequency model for
FET.

6 In a n-channel JFET, IDSS = 20 m A and VP = -6 V. Batch

Calculate the drain current when VGS = -3 V. Determine -6
the transconductance of a JFET if its amplification factor
is 96 and drain resistance is 32 KΩ .
7 Design a CMOS differential amplifier with an output gain Batch
stage to meet a set of specifications. The magnitude of -7
voltage gain of each stage is to be at least 600. Bias
currents are to be IQ=IREF=100μA, and biasing of the
circuit is to be V+=2.5 v and V-=2.5 v.

8 A half-wave rectifier circuit employing an SCR is adjusted Batch

to have a gate current of 1mA. The forward breakdown -8
voltage of SCR is 100 V for Ig = 1mA. If a sinusoidal
voltage of 200 V peak is applied, find : (i) firing angle (ii)
conduction angle (iii) average current.
Assume load resistance = 100Ω and the holding current
to be zero.

9 Determine the pinch off voltage for an N – channel silicon. Batch

JFET if the thickness of its gate region is given as -9
3.2×10-4cm and the donor density in n-type region is
1.2x10-5/cm3. Establish a relation between the three JFET
parameters, μ, rd and gm.

10 For the given circuit, a gate pulse is applied with Rh = Batch

1200 ohms a)Will the SCR turn on? b) If the answer is -10
“no” what is the condition to effect a turn on? c)After turn
on how can the SCR be turned off? Assumptions: Latching
current = 24 mA Holding current = 10 mA Forward on
state voltage = 0V
 INTEGRATED CIRCUIT FABRICATION PROCESS – CASE
STUDY

1 Mitigating Defects in IC Fabrication Batch

-1

2 The Evolution of Semiconductor Manufacturing Batch

–2

3 Green Initiatives in IC Fabrication Batch

–3

4 Failure Analysis in IC Fabrication Batch

–4

5 Quality Improvement in IC Fabrication Batch

–5

6 Advanced Materials in IC Fabrication Batch

–6

7 Security Challenges in IC Fabrication Batch

–7

8 The Role of Automation in IC Fabrication Batch

–8

9 Future Trends in IC Fabrication Batch

–9

10 IC Fabrication in Extreme Environments Batch

- 10
 Capstone project:

1. Audio Tone Control Circuit:

2. FM Remote Encoder/Decoder Circuit:
3. Wireless Mobile Battery Charger Circuit:
4. Battery Level Indicator: This article explains you how design battery level
indicator.
5. FM Radio Circuit:
6. Polarity cum Continuity Tester:
7. Mains Operated LED Light Circuit:
8. LED Lamp Dimmer Circuit:
9. Variable Voltage Power Supply from Fixed Voltage Regulator:
10. LED Christmas Lights Circuit:
11. Audio Equalizer Circuit:
12. Mains Operated LED Light Circuit:
13. LED Lamp Dimmer Circuit:
14. Variable Voltage Power Supply from Fixed Voltage Regulator:
15. LED Christmas Lights Circuit:
16. Audio Equalizer Circuit:

17.Periodically ON/OFF Mosquito repellent

18.IR-Controlled Water Supply
19.Timer with Musical Alarm
20.Triple-Mode tone Calling Bell
21.Long-range Burglar Alarm Using Laser Torch
22.Automatic Washbasin Tap Controller
23.Clock Tick-Tock Sound Generator & LED Pendulum
24. Twinkle Twinkle X'mas Star
25.Light-sensitive switch using a light-dependent resistor (LDR)
26.Night Lamp
27.Automatic Heat Detector
28.Wind sound Generator
29.Flashing Light with TRIACs

LIST OF EXPERIMENTS

S.n Experiment Name

o

1 Analysis of Knee voltage, static and dynamic forward resistance and reverse
resistance in PN diode.
2 Half wave rectifier using PN Junction diode

3 Full wave rectifier using PN Junction diode

4 Diode Clipper - Series - Parallel

5 Diode Clamper - Series - Parallel

6 Zener diode as line and load regulator

7 Zener diode clipper

8 Transistor as switch using LED

9 Current gain of Common Emitter configuration using BJT

10 Current gain of Common Base configuration using BJT

11 Voltage follower using BJT

12 JFET as voltage variable resistor

13 UJT Characteristics Study and as relaxation oscillator

14 DIAC Characteristics

15 Simulation of drain characteristics and transfer characteristics of MOSFET using

Pspice

16 Operation Characteristics of SCR using Spice