Datasheet

RBA300N10EHPF-5UA02
REXFET-1 N-Channel Power MOSFET R07DS1574EJ0100
Rev.1.00
100V - 340A - 1.5m Nov.08.2024

Description
Renesas TOLG technology features ultra compact, gullwing leads designs for compatible with the footprint to
the TOLL, enhanced thermal performance, management, and higher thermal cycling on board performance.
Renesas new split gate technology provide suitable for use in low RDS(on) and switching capability for high
power & high-frequency application.

Features
• Standard level gate drive voltage : VGS(th) = 2.0~4.0V
• Super Low on-state resistance : RDS(on) = 1.5m Max.
• Low input capacitance
• Low thermal resistance
• AEC-Q101 qualified
• PPAP capable
• Pb-free lead plating : RoHS compliant
• MSL1 classified according to IPC/JEDEC J-STD-020
Application
• Automotive : Small Traction (2-wheel, 3-wheel vehicle), 48V load, OBC, Charging station, LDC, etc.
• Industrial / Infrastructure : Energy infrastructure, Micro inverter, Power-tool, DC-DC, etc.

Outline

Absolute Maximum Ratings

(Tj=25°C unless otherwise notice.)
Item Symbol Ratings Unit
Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ±340 A
ID(DC) Notes1,2,5
Drain Current (Chip limitation) ±380 A
Drain Current (pulse) ID(pulse) Notes1,3,5 ±1360 A
Power Dissipation PD Notes1,5 468 W
Junction Temperature Tj 175 °C
Storage Temperature Tstg -55 to 175 °C
Single Avalanche Current IAS Notes4 64 A
Single Avalanche Energy EAS Notes4 409 mJ

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Thermal Resistance
Item Symbol Max. Unit
Notes4
Junction to Case Thermal Resistance Rth(j-c) 0.32 °C/W

Electrical Characteristics
(Tj=25°C unless otherwise notice.)
Item Symbol Min Typ Max Unit Test Conditions
Zero Gate Voltage Drain Current IDSS — — 10 A VDS = 100 V, VGS = 0 V
Gate Leakage Current IGSS — — ±500 nA VGS =  20 V, VDS = 0 V
Gate to Source Threshold Voltage VGS(th) 2.0 — 4.0 V VDS = VGS, ID = 250 A
Drain to Source On-state Resistance RDS(on) — 1.3 1.5 m VGS = 10 V, ID = 100 A
Input Capacitance Ciss — 13000 — pF VDS = 50 V
Output Capacitance Coss — 3300 — pF VGS = 0 V
Reverse Transfer Capacitance Crss — 80 — pF f = 100 kHz
Gate resistance Rg — 1.8 — 
Turn-on Delay Time td(on) — 75 — ns VDD = 50 V, ID = 100 A
Rise Time tr — 60 — ns VGS = 10 V
Turn-off Delay Time td(off) — 130 — ns RG = 5 
Fall Time tf — 55 — ns
Total Gate Charge Qg — 170 — nC VDD = 50 V
Gate to Source Charge Qgs — 75 — nC VGS = 10 V
Gate to Drain Charge Qgd — 30 — nC ID = 100 A
Body Diode Forward Voltage VF(S-D) — 0.9 1.5 V IF = 100 A, VGS = 0 V
Reverse Recovery Time trr — 110 — ns IF = 100 A, VGS = 0 V
Reverse Recovery Charge Qrr — 300 — nC di/dt = 100 A/s

Notes 1. Tc = 25°C
2. Value is limited by overall system design including PCB.
3. PW  10 s
4. L = 100H , VDD = 50V , VGS = 20 → 0V , RG = 25 
5. Defined by design. Not subject to production test.

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Typical Characteristics

POWER DISSIPATION vs. CASE TEMPERATURE DRAIN CURRENT vs. CASE TEMPERATURE

500 500
Notes5 Notes5
PD - Power Dissipation - W

400 400

ID - Drain Current - A
300 300

200 200

100 100

0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

Tc - Case Temperature - ℃ Tc - Case Temperature - ℃

FORWARD BIAS SAFE OPERATING AREA TRANSIENT THERMAL IMPEDANCE vs.
PULSE WIDTH
10000 1
TC = 25℃
Notes5
Zth(j-c) - Transient Thermal Impedance - ℃/W
Single Pulse
1000 Notes5
ID - Drain Current - A

100 0.1

10 D=PW/T
RDS(on) limit D=0.5
1us 0.2
1 10us
0.01 0.1
100us 0.05
0.1 1ms 0.02
10ms 0.01
DC Single pulse
0.01 0.001
0.1 1 10 100 1000 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01

VDS - Drain to Source Voltage - V PW - Pulse Width - s

TYPICAL AVALANCHE CHARACTERISTICS TYPICAL AVALANCHE ENERGY

1000 1600
VDD = 50V IAS=75A VDD = 50V
VGS = 20 → 0V VGS = 20 → 0V
EAS - Single Avalanche Energy - mJ
IAS - Single Avalanche Current - A

RG = 25Ω IAS=150A RG = 25Ω

Notes5 Notes5
IAS=300A
1200

100 800

400
Tj=25℃
Tj=100℃
Tj=150℃
10 0
1 10 100 1000 25 75 125 175

tAV - Time in Avalanche - μs Tj - Junction Temperature - ℃

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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-State Resistance - mΩ

DRAIN CURRENT
500 5
Tj = 25℃ Tj = 25℃
VGS = 10V VGS = 10V
400 4
ID - Drain Current - A

300 3

200 2

100 1

0 0
0 0.5 1 1.5 2 2.5 10 100 1000

VDS - Drain to Source Voltage - V ID - Drain Current - A

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs

GATE TO SOURCE VOLTAGE JUNCTION TEMPERATURERE

RDS(on) - Drain to Source On-State Resistance - mΩ

RDS(on) - Drain to Source On-State Resistance - mΩ

5 5
Tj = 25℃ VGS = 10V
ID = 100A ID = 100A
4 4

3 3

2 2

1 1

0 0
0 5 10 15 20 -50 0 50 100 150 200

VGS-GATE to Source Voltage-V Tj - Junction Temperature - ℃

FORWARD TRANSFER CHARACTERISTICS GATE TO SOURCE THRESHOLD VOLTAGE vs.

JUNCTION TEMPERATURE
1000 5
VGS(th) - Gate to Source Threshold Voltage - V

VDS = 10V VDS = VGS

ID=10mA
100
4
ID - Drain Current - A

10
3
1
2
0.1
Tj=175℃
1
0.01 Tj=25℃

Tj=-40℃
0.001 0
1 2 3 4 5 6 -50 0 50 100 150 200

VGS - Gate to Source Voltage - V Tj - Junction Temperature - ℃

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CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100000 20
Tj = 25℃ , VGS = 0V Tj = 25℃

VGS - Gate to Source Voltage - V

Ciss, Coss, Crss - Capacitance - pF

f = 100kHz VDD = 50V

16 ID = 100A
10000

12
1000
8

100 Ciss
4
Coss
Crss
10 0
0.1 1 10 100 0 50 100 150 200 250

VDS - Drain to Source Voltage - V Qg - Gate Charge - nC

DRAIN TO SOURCE BREAKDOWN VOLTAGE vs.

SOURCE TO DRAIN DIODE FORWARD VOLTAGE JUNCTION TEMPERATURE

1000 V(BR)DSS - Drain to source breakdown voltage - V 130

Tj = 25℃ ID=10mA
VGS=0V
IF - Diode Forward Current - A

120
100

110
10
100

1
90
VGS=0V
VGS=10V
0.1 80
0.0 0.5 1.0 1.5 -50 0 50 100 150 200

VF(S-D) - Source to Drain Voltage - V Tj - Junction Temperature - ℃

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RBA300N10EHPF-5UA02 REXFET

Test Circuit

Avalanche
Test Circuit Waveform
L V(BR)DSS
IAS

ID

VDD
VDS
RG 0
D.U.T. VDD VGS
0
VGS
1 2 V(BR)DSS
EAS = ･ L ･ IAS ･
2 V(BR)DSS - VDD

Switching Time
Test Circuit Waveform
RL
90%

VGS
10%

VDS 90% 90%

RG
D.U.T. VDD

10% 10%
VGS
td(on) tr td(off) tf

Gate Charge
Test Circuit Waveform

Qg VGS

IG
→ D.U.T. VDD

VGS Qgs Qgd

Reverse Recovery
Test Circuit Waveform
IF
IF
D.U.T. trr
L di/dｔ
0

RG
VDD
Qrr

VGS

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Package Dimensions

Mount pad

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Ordering Information
Part No. Packing Quantity
RBA300N10EHPF-5UA02#GB0 Taping 1500pcs/reel

Packing Specification

Remark : Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps
must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect reliability even if it is within the
absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability
Handbook. As for life test at negative gate bias, not tested at absolute maximum rating.

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