Final Exam Spring 2018 L52
Final Exam Spring 2018 L52
Final Examination
ELE231 (Fundamentals of Electronics), L52, SPRING 2018
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Notes:
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1
Microelectronic Circuits 6th Edition Textbook Solutions | Chegg.com
1) [7 pts] Design a clipper circuit that has the transfer characteristic shown in Fig. 2. Assume a 0.7 V diode
forward drop. Assume vs is a sine wave with 10V peak, draw theCommentsoutput
(2)
waveform in the graph below.
2) [3 pts] From Fig. 2, find the relationship between Vo and Vs in each appropriate interval of Vs (Vs≤-5V,
Step 3 of 13
-5V≤Vs≤5V, and Vs≥5V).
Apply Kirchhoff’s current law at non-inverting node of circuit in Figure 2.
The voltage at the inverting terminal due to virtual ground concept is, .
IDsat=K(VGS – Vt)2, Use Ohm’s law to calculate the input resistance seen by source, alone.
2
(a)
Fig. 4
For the following questions, tick only right answers, or fill in the blank.
1) The lower the opamp common-mode rejection ration (CMRR) the more it rejects noise Step 2 of 20
2) The slew rate is the minimum rate at which the opamp output voltage can change
3) The opamp full-power bandwidth fM is maximum frequency at which anDetermineoutputthesinusoid
value of base voltage.
with an
amplitude equal to opamp maximum output voltage (Vomax) can be produced without distortion.
From Figure 1, the base voltage is,
4) For a voltage regulator, whose RRR=80 dB, its output ripple is its input ripple divided by 80.
5) Transistors in IC circuits are biased using current sources and current mirrors.
Thus, the value of base voltage, is .
6) The conclusion from the BJT and MOSFET amplifiers that: Determine the value of emitter voltage.
a) Cascading various configurations of BJT (or MOSFET) amplifiers allow to improve the performance
of amplifiers
b) In a cascade amplifier, due to its high output Z, an emitter-follower Substitute
circuit should for be
in theplaced
equation. at the
end to guarantee low loading effect at the output.
7) In general, when comparing the BJT and MOSFET transistors, three main differences,
a) The device is capable of higher frequency is __________________Thus, the value of emitter voltage, is .
b) The device that depends more on geometry (width, length, etc.) is __________________
c) The device that has cost-effective higher integration capability is __________________
Comment
8) Non-linear devices (e.g. diodes, transistors) are generally biased and then operated over a small input
signal to behave like a linear device that can be modeled by linear models.
Step 3 of 20
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