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Final Exam Spring 2018 L52

The document is a final examination for the ELE231 course (Fundamentals of Electronics) at the College of Engineering, scheduled for June 11, 2018. It includes various problems related to circuit design, analysis, and operational characteristics, with a total of 100 points available. Students are instructed to show all their work and are prohibited from using notes or mobile phones during the exam.
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0% found this document useful (0 votes)
18 views3 pages

Final Exam Spring 2018 L52

The document is a final examination for the ELE231 course (Fundamentals of Electronics) at the College of Engineering, scheduled for June 11, 2018. It includes various problems related to circuit design, analysis, and operational characteristics, with a total of 100 points available. Students are instructed to show all their work and are prohibited from using notes or mobile phones during the exam.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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College of Engineering

Department of Electrical Engineering

Final Examination
ELE231 (Fundamentals of Electronics), L52, SPRING 2018
Documents: not allowed
Mobile Phones: not allowed

Name: _______________________________________________ ID # __________

Instructor: Dr. Farid Touati, Eng. Hamid


Date: Monday 11/06/2018
Time: 08:00 – 10:00 am
Place: C07-0142

Problem No. Max Points Score


1 34
2 10
3 30
4 18
5 08
TOTAL 100

Notes:

1. Read the questions carefully before starting.


2. Start with the question that you feel more comfortable with.
3. Always write expressions first, and then substitute numbers.
4. You need to show all your work and not just give final equations!!
5. Close notes

Good luck!

1
Microelectronic Circuits 6th Edition Textbook Solutions | Chegg.com

Problem 1 [34 pts]


1. [16 pts] For the circuit shown in Fig. 1,
a) Express vo as a function of v1 and v2. Hint: use the
superposition theorem.
b) Find the input resistance seen by v1 alone and v2 alone
2. [18 pts] Design a circuit that implements the following:
v2
!! ! = !!! ! + ! !! ! !", where V1(t) and V2(t) are the
input voltages, and Vo(t) is the output voltage. Specify the
values of all components (resistors and capacitors).
Fig. 1
Problem 2 [10 pts] Here, is the voltage at the inverting terminal (negative terminal), is the voltage at the non-
inverting terminal (positive terminal), and is the current due to source, .

1) [7 pts] Design a clipper circuit that has the transfer characteristic shown in Fig. 2. Assume a 0.7 V diode
forward drop. Assume vs is a sine wave with 10V peak, draw theCommentsoutput
(2)
waveform in the graph below.
2) [3 pts] From Fig. 2, find the relationship between Vo and Vs in each appropriate interval of Vs (Vs≤-5V,
Step 3 of 13
-5V≤Vs≤5V, and Vs≥5V).
Apply Kirchhoff’s current law at non-inverting node of circuit in Figure 2.

The voltage at the inverting terminal due to virtual ground concept is, .

Apply Kirchhoff’s current law at inverting node.

Substitute 0 V for in the equation.

Fig. 2 Clipper circuit Output waveform

Problem 3 [30 pts] Comment

Consider the NMOS amplifier circuit shown in


Fig. 3, assume K=0.25 mA/V2, Vt=1 V,
Step 4 of 13

IDsat=K(VGS – Vt)2, Use Ohm’s law to calculate the input resistance seen by source, alone.

gm=2(K×ID)0.5=K(VGS-Vt), and λ=0 (no channel-


length modulation). (Saturation: VGS–VDS ≤ Vt or
VG-VD<Vt). Substitute 0 V for in the equation.

1) For the circuit shown in Fig. 3, https://www.chegg.com/homework-help/Microelectronic-Circuits-6th-edition-chapter-2-problem-62P-solution-978

a. [3 pts] Draw the DC equivalent circuit.


b. [3 pts] Design (i.e. calculate RD) the
circuit in Fig. 3 to have a drain current
ID=1 mA and a drain voltage VD = 4.5V
(see Fig. 3)
c. [4 pts] Check for saturation mode. Fig. 3
2) Using the values found in the DC analysis above,
a. [4 pts] Draw the small-signal equivalent circuit of the amplifier and indicate the values of the
transistor model elements.
b. [5 pts] Find the ac voltage gain Av = vo/vin. Show steps.
c. [2 pts] Find the input impedance Zin. Show steps.
d. [3 pts] Find the output impedance Zout. Show steps.
e. [2 pts] Draw the voltage amplifier model of the circuit of Fig. 3.
f. [4 pts] Determine the expression of the voltage across the load if the input voltage vs(t)=0.001×sinwt.
(Hint: find first Avs=vo/vs)

2
(a)

Refer to Figure P6.35 (a) in the text book.

The modified circuit diagram is shown in Figure 1.

Problem 4 [18 pts]

For the circuit shown in Fig. 4,


1. Find the emitter, base and collector voltages and currents (β =100).
2. Determine the transistor region of operation.

Fig. 4

Problem 5 [8 pts] Comment

For the following questions, tick only right answers, or fill in the blank.
1) The lower the opamp common-mode rejection ration (CMRR) the more it rejects noise Step 2 of 20

2) The slew rate is the minimum rate at which the opamp output voltage can change
3) The opamp full-power bandwidth fM is maximum frequency at which anDetermineoutputthesinusoid
value of base voltage.
with an
amplitude equal to opamp maximum output voltage (Vomax) can be produced without distortion.
From Figure 1, the base voltage is,

4) For a voltage regulator, whose RRR=80 dB, its output ripple is its input ripple divided by 80.
5) Transistors in IC circuits are biased using current sources and current mirrors.
Thus, the value of base voltage, is .

6) The conclusion from the BJT and MOSFET amplifiers that: Determine the value of emitter voltage.

a) Cascading various configurations of BJT (or MOSFET) amplifiers allow to improve the performance
of amplifiers
b) In a cascade amplifier, due to its high output Z, an emitter-follower Substitute
circuit should for be
in theplaced
equation. at the
end to guarantee low loading effect at the output.
7) In general, when comparing the BJT and MOSFET transistors, three main differences,
a) The device is capable of higher frequency is __________________Thus, the value of emitter voltage, is .
b) The device that depends more on geometry (width, length, etc.) is __________________
c) The device that has cost-effective higher integration capability is __________________
Comment

8) Non-linear devices (e.g. diodes, transistors) are generally biased and then operated over a small input
signal to behave like a linear device that can be modeled by linear models.
Step 3 of 20

https://www.chegg.com/homework-help/Microelectronic-Circuits-7th-edition-

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