JEE
Manzil JEE (2025)
Physics
DPP: 18
Semiconductor
Q1 In an n-type silicon, which of the following RC = 2kΩ , then IB = ?
statement is true :
(A) Electrons are majority carriers and trivalent
atoms are the dopants.
(B) Electrons are minority carriers and
pentavalent atoms are the dopants.
(C) Holes are minority carries and pentavalent
(A) 0.01 mA
atoms are the dopants.
(B) 0.04
(D) Holes are majority carries and trivalent mA
(C) 0.02
atoms are the dopants. mA
(D) 0.03 mA
Q2 In the following circuit, the value of Y
Q5 Suppose an unregulated d.c. input voltage VI
is applied to a Zener diode having breakdown
voltage (Vz). Then the breakdown condition
for the diode to work as voltage regulator is
(A) VI < VZ
(B) VI = VZ
(C) VI > VZ
(A) in 0
(D)
(B) is 1 VI = √ VZ
(C) fluctuates between 0 and 1
Q6 In the forward bias arrangement of a P N -
(D) is indeterminate as the circuit cant be
realised junction diode
(A) The N -end is connected to the positive
Q3 The following truth table corresponds to the terminal of the battery
logic gate where A and B represent inputs (B) The P -end is connected to the positive
and X represents output. terminal of the battery
(C) The direction of current is from N -end to P
-end in the diode
(D) The P -end is connected to the negative
(A) NAND (B) AND terminal of battery
(C) XOR (D) OR
Q7 Statement-I: When a Si sample is doped with
Q4 In the following common emitter circuit, if
Boron, it becomes P type and when doped by
,
β = 100 VCE = 7 V, VBE = Negligible,
Android App | iOS App | PW Website
JEE
Arsenic it becomes N-type semi conductor Choose the correct answer from the options
such that P-type has excess of holes and N- given below:
type has excess of electrons. (A) (A) → (ii), (B) → (iv), (C) →
Statement-II: When such P-type and N-type
(i), (D) → (iii)
semiconductors, are fused to make a junction,
(B)
a current will automatically flow which can be (A) → (iii), (B) → (iv), (C) →
detected with an externally connected (i), (D) → (ii)
ammeter. (C) (A) → (ii), (B) → (i), (C) →
In light of the above statements, choose the
(iv), (D) → (iii)
most appropriate answer from the options
(D)
given below. (A) → (ii), (B) → (i), (C) →
(A) Both Statement-I and statement-II are (iii), (D) → (iv)
incorrect
Q10 The reverse breakdown voltage of a Zener
(B) Statement-I is incorrect but statement-II is
correct diode is 5.6 V in the given circuit. The current
(C) Both Statement-I and statement-II are Iz through the Zener is:
correct
(D) Statement-I is correct but statement-II is
incorrect
Q8 For a transistor the current amplification
factor is 0.8. The transistor is connected in (A) 10 mA
common emitter configuration, the change in (B) 17 mA
collector current when the base current
(C) 15 mA
changes by 6 mA is
(D) 7 mA
(A) 6 mA
(B) 4.8 mA
Q11 In the following circuit, the equivalent
(C) 24 mA resistance between A and B is
(D) 8 mA
Q9 Match List I with List II.
List I List II
Used either for stepping
(A) Rectifier (i) up or stepping down the (A) 20
Ω
a.c. voltage 3
Used to convert a.c. (B) 10Ω
(B) Stabilizer (ii)
voltage into d.c. voltage (C) 16Ω
Used to remove any (D) 20Ω
(C) Transformer (iii) ripple in the rectified
output voltage Q12 In figure given below, assuming the diodes to
Used for constant output be ideal:-
voltage even when the
(D) Filter (iv)
input voltage or load
current change.
Android App | iOS App | PW Website
JEE
(A) D is forward biased and D is reverse
1 2
biased and hence current flows from A to
B
(B) D2 is forward biased and D1 is reverse
biased and hence no current flows from B
to A and vice-versa (A)
(C) D1 and D2 are both forward biased and
hence current flows from A to B
(B)
(D) D and D are both reverse biased and
1 2
hence no current flows from A to B and
vice-versa (C)
Q13 Ge and Si diodes conduct at 0.3 V and 0.7 V ,
respectively. In the following figure, if Ge diode (D)
connection are reversed, the value of V0
changes by
Q15 In a full wave rectifier, input ac current has a
frequency v. The output frequency of current
is
(A) v/2 (B) V
(A) 0.2 V (C) 2v (D) None of these
(B) 0.4 V
Q16
(C) 0.6 V
In N P N transistor, 1010 electrons enter in
(D) 0.8 V emitter region in 10−6sec. If 2% electron are
lost in base region, then collector current and
Q14 Take the breakdown voltage of the Zener
current amplification factor (β), respectively,
diode used in the given circuit as 6 V . For the
are:
input voltage shown in figure below, the time
(A) 1.57
variation of the output voltage is:(Graphs mA, 48
drawn are schematic and not to scale) (B) 1.92 mA, 70
(C) 2 mA, 25
(D) 2.25 mA, 100
Q17 Figure shows a DC voltage regulator circuit
with a Zener diode of breakdown voltage
Android App | iOS App | PW Website
JEE
= 6 V . If the unregulated input voltage varies
between 10 V to 16 V then what is the
maximum Zener current
The value of x, to the nearest integer, is
(A) 2 (B) 3
(C) 4 (D) 5
Q20 A diode has a knee voltage value of 0.5 V . This
(A) 1.5 mA diode is connected in a circuit as shown in
(B) 7.5 mA figure. Calculate potential V0 at point B in the
(C) 3.5 mA circuit:
(D) 2.5 mA
Q18 Three ideal p − n junction diodes D1, D2 and
D3 are connected as shown in the circuit. The
potentials VA and VB can be changed.
(A) 8.0 V
(B) 0.8 V
(C) −0.8 V
(D) −80 V
Q21 Mobility of electrons in N-type Ge is
5000 cm /
2
volts and conductivity 5mho/cm.
If effect of holes is negligible then impurity
concentration will be :-
If VA is kept at −10 V and VB at −5 V , the
(A) 15 3
6.25 × 10 /cm
effective resistance between A and B
(B) 9.25 × 1014/cm3
becomes
(A) R (C) 6 × 1013/cm3
(B) R/2
(D) 13 3
9 × 10 /cm
(C) 3R
(D) 3R/2 Q22 Logic gates X and Y have the truth tables
shown below:
Q19 The value of power dissipated across the zener
diode (Vz = 15 V) connected in the circuit as
shown in the figure is x × 10−1 watt.
Android App | iOS App | PW Website
JEE
(C)
(D)
Q25 The input signal given to a CE amplifier having
π
a voltage gain of 150 is Vi = 2 cos (15t + ) .
3
When the output of X is connected to the
The corresponding output signal will be:
input of Y , the resulting combination is (A) 4π
equivalent to 300 cos (15t +
3
)
(A) NOT gate (B) OR gate (B) π
300 cos (15t + )
(C) NAND gate (D) ANY gate 3
(C) 2π
75 cos (15t + )
Q23
A pure Si crystal has 5 × 1022 atoms m−3. It is 3
(D) 5π
doped by 1ppm concentration of pentavalent 2 cos (15t + )
6
atoms. The number of holes is:
16 −3
(ni = 1.5 × 10 m )
(A) 6 −3
2.5 × 10 m
(B) 4.5 × 109 m
−3
(C) 9 −3
6 × 10 m
(D) 4 × 10
6
m
−3
Q24 Draw the output signal Y in the givem
combinations of gates.
(A)
(B)
Android App | iOS App | PW Website
JEE
Answer Key
Q1 C Q14 C
Q2 A Q15 C
Q3 D Q16 A
Q4 B Q17 C
Q5 C Q18 D
Q6 B Q19 D
Q7 D Q20 C
Q8 C Q21 A
Q9 A Q22 C
Q10 A Q23 B
Q11 C Q24 B
Q12 B Q25 A
Q13 B
Android App | iOS App | PW Website