D92M-03 ®

D92M-03 Pb
Pb Free Plating Product
20 Ampere,400 Volt Common Cathode Insulated Fast Recovery Diodes
TO-3PF/TO-3PML
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode

Cathode
PRODUCT FEATURE
· Ultrafast Recovery Time Anode
Internal Configuration
· Soft Recovery Characteristics
Base Backside
· Low Recovery Loss
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current

GENERAL DESCRIPTION
L4204S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine.
ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified
Symbol Parameter Test Conditions Values Unit
VR Maximum D.C. Reverse Voltage 400 V
V RRM Maximum Repetitive Reverse Voltage 400 V
T C =110°C, Per Diode 10 A
I F(AV) Average Forward Current
T C =110°C, Per Package 20 A
I F(RMS) RMS Forward Current T C =110°C, Per Diode 14 A
I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 100 A

PD Power Dissipation 83 W
TJ Junction Temperature -40 to +150 °C
T STG Storage Temperature Range -40 to +150 °C
Torque Module-to-Sink Recommended（M3） 1.1 N·m
R θJC Thermal Resistance Junction-to-Case 1.5 °C /W
Weight 6 g
ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V R =400V -- -- 15 µA
I RM Reverse Leakage Current
V R =400V, T J =125°C -- -- 250 µA

I F =10A -- 1.00 -- V
VF Forward Voltage
I F =10A, T J =125°C -- 0.87 -- V
t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 20 -- ns
t rr Reverse Recovery Time V R =200V, I F =10A -- 25 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 2.2 -- A
t rr Reverse Recovery Time V R =200V, I F =10A -- 46 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 5.5 -- A

Rev.06 Page 1/3

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 D92M-03 ®

20 70
VR=200V
60 TJ =125°C
16 IF=20A
TJ =125°C
50

12
40

trr (ns)
IF (A)

30
8 IF=10A

20 IF=5A
TJ =25°C
4
10

0 0
0 0.25 0.50
0.75 1.00 1.25 1.50 0 200 400 600 800 1000
VF（V） diF/dt（A/μs）
Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt

25 250
VR=200V VR=200V
IF=20A
TJ =125°C TJ =125°C
20 200
IF=20A
IRRM (A)

15 150
Qrr (nc)

IF=10A
IF=5A
IF=10A
10 100
IF=5A

5 50

0 0
0 200400 600 800 1000 0 200400 600 800 1000
diF/dt（A/μs） diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt

1.2 10

1
1
0.8
Duty
ZthJC (K/W)

0.5
-1 0.2
0.6 10
Kf

0.1
trr 0.05
Single Pulse
0.4 IRRM
-2
10
0.2 Qrr

-3
0 10 -4 -3 -2 -1
0 75 25 50
100 125 150 10 10 10 10 1
TJ (°C) Rectangular Pulse Duration (seconds)
Fig5. Dynamic Parameters vs Junction Temperature Fig6. Transient Thermal Impedance

Rev.06 Page 2/3

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 D92M-03 ®

IF trr

0.25 IRRM
Qrr
IRRM

dIF/dt 0.9 IRRM

Fig7. Diode Reverse Recovery Test Circuit and Waveform

Dimensions in Millimeters
Fig8. Package Outline

Rev.06 Page 3/3

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/