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Assignment 4 1

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Assignment 4 1

Uploaded by

Achintya Kumar
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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Subject Name: ELECTRONIC DEVICES Subject Code: [BEC - 301]

Branch/Semester: ECE / 3rd

Assignment-4
1. Draw the circuit diagram of npn transistor and input and output characteristics of BJT in
CE, CB and CC configuration and its application. Explain the behaviour of CE in active
and cut off mode
2. Draw and illustrate the Ebers-Moll model of BJT with its characteristics and example.
3. Differentiate between CE, CB and CC of BJT in respect of Voltage Gain, Current Gain,
Input Impedance, Output Impedance, Power Gain and Application.
4. What is Base Width modulation (Early Effect)? What is Thermal Runaway in BJT?
Enlist applications of BJT.
5. Derive the relation between α, β and ϒ for BJT. . Determine the current gain β in CE
configuration of BJT if α= 0.98.
6. What is the need for biasing in transistor amplifier? What are the factors to be considered
to design a biasing circuit? What is DC load line?
7. What are the advantages and disadvantages of fixed bias circuits? How it is overcome in
Modified Emitter Bias Biasing?
8. Explain the Voltage Divider Biasing. Why Voltage Divider biasing is preferred over other
biasing schemes?
9. Define stability factor of an amplifier. What is ideal value? What is the need for biasing in
transistor amplifier? What are the factors to be considered to design a biasing circuit?
10. Determine the change in collector current for a change of 10 microampere in base current
if it is in CE configuration of BJT if α= 0.99.
11. Determine the Q-Point for the below transistor.

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