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Junction Field Effect Transistor

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7 views

Junction Field Effect Transistor

Uploaded by

rashmimaruthi2
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Junction field effect transistor

The junction field effect transistor or JFET is a voltage controlled


three terminal unipolar device semiconductor device available in
N-channel or p-channel

The JFET is a three terminal device semiconductor device in which


current conduction is by one type of carrier that is electrons and
holes

The current conduction is controlled by means of an electric field


between the gate and the conducting channel of the device

The JFET has high input impedance and low noise level

Construction

The JFET consists of a p-type or n-type silicon bar containing two


pn junction at the sides as shown in figure the bar forms the
conducting channel for the charge carrier

The two p-n junction forming diode are connected internally and a
common terminal called gate is taken out

Other terminal are source and drain taken out the bar

Thus a JFET has three terminal device such as gate ,source and
drain

If the bar is of p-type it is called as p channel JFET

And if the bar is of n-type it is called as n-channel JFET

JFET working

In each case the voltage between the gate and the source is such
that the gate is reverse biased the source and the drain terminal
are reverse biased or interchangeable

The following points may be noted as:


The input circuit of a JFET is reverse biased this means that the
device has high input impedance

The drain is so reverse biased with respect to source that the


drain current flows from the source to drain

In all JFET source current is equal to the drain current

Principle and working of JFET

Principle of JFET: the circuit of n-channel JFET with normal


polarities the two p-n junction at the sides form two depletion
regions the current conduction is by one type of the charge
carrier is through the channel between the two depletion layers
and out of the drain the width and hence resistance of this
channel can be controlled by changing the voltage .

The greater the reverse volt5age the wider will be the depletion
layer and narrower will be the conducting channel the narrower
channel means greater resistance and hence source to drain
current decreases

Reverse will happen when gate source voltage decreases. thus


JFET operates on the principle that

Width and hence resistance3 of the conducting channel


decreases and can be varied by changing the reverse voltage

In other word the magnitude of the drain current can be changed


by altering

Working of JFET

The working of the JFET can be explained as follows :

Case:1 when a voltage is applied between drain and source


terminals on the gate is zero as shown in figure at the sides of the
bar establish depletion layers

The electrons will flow from the source to drain

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