Unit v -Sources of Power Dissipation
Unit v -Sources of Power Dissipation
n+ n+
Isub
IPT
IGIDL ID
Leakage Current Components
• Subthreshold conduction, Isub
• Reverse bias pn junction conduction, ID
• Gate induced drain leakage, IGIDL due to
tunneling at the gate-drain overlap
• Drain source punchthrough, IPT due to short
channel and high drain-source voltage
• Gate tunneling, IG through thin oxide
Reducing Leakage Power
• Leakage power as a fraction of the total power
increases as clock frequency drops. Turning supply
off in unused parts can save power.
• For a gate it is a small fraction of the total power; it
can be significant for very large circuits.
• Scaling down features requires lowering the
threshold voltage, which increases leakage power;
roughly doubles with each shrinking.
• Multiple-threshold devices are used to reduce
leakage power.
Algorithmic Level Design – factivity Reduction
• Minimization the switching
activity, at high level, is one way
to reduce the power dissipation
of digital processors.
• One method to minimize the
switching signals, at the
algorithmic level, is to use an
appropriate coding for the
signals rather than straight
binary code.
• The table shown below shows a
comparison of 3-bit
representation Binary Code Gray
Code Decimal Equivalent.
State Encoding for a Counter
Logic Level Optimization
Recap: Logic Restructuring
▪ Logic restructuring: changing the topology of a logic
network to reduce transitions