FDR8521L

August 2000

FDR8521L
P-Channel MOSFET With Gate Driver For Load Switch Application

General Description Features

This device is designed for configuration as a load switch •V = 0.07 V @ V = 12 V, I = 1 A.R(ON) = 0.07 Ω
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and is particularly suited for power management in por- V = 0.115 V @ V = 5 V, I = 1 A.R(ON) = 0.115 Ω.
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table battery powered electronic equipment. Designed to
operate from 3V to 20V input and supply up to 2.9A, the •V = 0.2 V @ V = 12 V, I =2.9 A.R(ON) = 0.07 Ω
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device features a small N-Channel MOSFET (Q1) together V = 0.2 V @ V = 5 V,I = 1.8 A.R(ON) = 0.115 Ω.
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with a large P-Channel Power MOSFET (Q2) in a single
SO-8 package. • Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6kV Human Body Model).
Applications • High density cell design for extremely low on-resistance.

• Power management
• Load switch

VOU T,C1,CO 5 Q2 4 VIN ,R1,C i

EQUIVALENT CIRCUIT

VOU T,C1,CO 6 3 R1,R 2,C1

VDR OP
+ -
7 Q1
2 C1,CO IN OUT
R2

R2 8 1 VO N/ OFF
ON/OFF
pin 1
TM
SuperSOT -8 See Application Cir cuit

Absolute Maximum Ratings T A =25 oC unless otherwise noted

Symbol Parameter Ratings Units

V IN Input Voltage Range (Note 1) 3 - 20 V
V ON/OFF On/Off Voltage Range 2.5 - 8 V
ID Load Current - Continuous (Note 2) 2.9 A
- Pulsed 8
PD Maximum Power Dissipation (Note 2) 0.8 W
T J , T stg Operating and Storage Temperature Range -55 to +150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D 6 kV
Human-Body-Model (100pf/1500 Ohm)

Thermal Characteristics
R θ JA Thermal Resistance, Junction-to-Ambient (Note 2) 156 ° C/W
R θ JC Thermal Resistance, Junction-to-Case (Note 2) 40 ° C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
8521L FDR8521L 13’’ 12mm 3000 units

2000 Fairchild Semiconductor International FDR8521L Rev. C

 FDR8521L
Electrical Characteristics o
TA=25 C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF Characteristics
IFL Forward Leakage Current VIN = 20 V, VON/OFF = 250 µA 1 µA

ON Characteristics (Note 3)
VDROP Conduction Voltage VIN = 12 V, VON/OFF = 3.3 V, IL = 1 A 0.053 0.070 V
VIN = 5 V, VON/OFF = 3.3 V, IL = 1 A 0.085 0.115
VIN = 12 V, VON/OFF = 3.3 V, IL = 2.9 A 0.200
VIN = 5 V, VON/OFF = 3.3 V, IL = 1.8 A 0.200
R(ON) Q2 - Static On-Resistance VGS = -12 V, ID = 2.9 A 0.054 0.070 Ω
VGS = -5 V, ID = 1.8 A 0.090 0.115
IL Load Current VDROP = 0.2 V, VIN = 12 V, VON/OFF = 3.3 V 2.9 A
VDROP = 0.2 V, VIN = 5 V, VON/OFF = 3.3 V 1.8

Notes:
1. Range of VIN can be up to 25V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -20V.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDR8521L Load Switch Application

APPLICATION CIRCUIT

Q2

IN O UT
R1
C1

R2

Ci Co LOAD
ON/OFF
Q1

External Component Recommendation:

For applications where Co ≤ 1µF.
For slew rate control, select R2 in the range of 470 - 10kΩ .
For additional in-rush current control,C1 ≤ 1000pF can be added.
Select R1 so that the R1/R2 ratio ranges from 10 - 100. R1 is required to turn Q2 off.

FDR8521L Rev. C
 FDR8521L
Typical Characteristics (continued)

0.7 1
VIN = 12V
VIN = 5V
0.6 VON/OFF = 1.5 - 8V
VON/OFF = 1.5 - 8V
PW = 300µS, D < 2% 0.8
o
PW = 300µS, D < 2% o
TA = 125 C
0.5 TA = 125 C
0.6
VDROP (V)

VDROP (V)
0.4
o
TA = 25 C
o
0.3 TA = 25 C
0.4

0.2
0.2
0.1

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8

IL (A) IL (A)

Figure 1. Conduction Voltage Drop Figure 2. Conduction Voltage Drop

Variation with Load Current. Variation with Load Current.

0.3
IL = 1A
0.25 VON/OFF = 1.5V -8V
PW = 300µS, D < 2%
0.2
VDROP (V)

0.15

o
0.1 TA = 125 C

0.05 o
TA = 25 C

0
2 4 6 8 10 12
VIN, INPUT VOLTAGE (V)

Figure 3. On-Resistance Variation

with Input Voltage.

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 0.2 R θJA (t) = r(t) * R θJA

0.1
R θJA = 156 °C/W
0.1
0.05 0.05
P(pk)
0.02
0.02
0.01 t1
0.01 t2
0.005 Single Pulse
TJ - TA = P * R JA (t)
θ
0.002 Duty Cycle, D = t 1/ t 2

0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)

Figure 4.Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 2.
Transient themal response will change depending on the circuit board design.

FDR8521L Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ QFET™ VCX™

Bottomless™ GlobalOptoisolator™ QS™
CoolFET™ GTO™ QT Optoelectronics™
CROSSVOLT™ HiSeC™ Quiet Series™
DOME™ ISOPLANAR™ SuperSOT™-3
E2CMOSTM MICROWIRE™ SuperSOT™-6
EnSignaTM OPTOLOGIC™ SuperSOT™-8
FACT™ OPTOPLANAR™ SyncFET™
FACT Quiet Series™ POP™ TinyLogic™
FAST® PowerTrench® UHC™

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. F1