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EXPERIMENT-8_To draw the I-V characteristic curve of a p-n junction in forward bias and reverse bias. (1)

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348 views

EXPERIMENT-8_To draw the I-V characteristic curve of a p-n junction in forward bias and reverse bias. (1)

Uploaded by

arpithamajith123
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Experiment – 8

Aim
To draw the I-V characteristic curve of a p-n junction in forward bias and reverse bias.
Apparatus
A p-n junction (semi-conductor) diode, a 3 volt battery, a 50 volt battery, a high resistance rheostat, one 0-3
volt voltmeter, one 0-50 volt voltmeter, one 0-100 mA ammeter, one 0-
connecting wires and pieces of sand paper.

Theory
Forward bias characteristics. When the p -section of the diode is connected to positive terminal of a battery
and n-section is connected to negative terminal of the battery then junction is said to be forward biased.
With increase in bias voltage, the forward current increases slowly in the beginning and then rapidly. At
about 0.7 V for Si diode (0.2 V for Ge), the current increases suddenly. The value of forward bias voltage,
at which the forward current increases rapidly, is called cut in voltage or threshold voltage.
Reverse bias characteristics. When the p -section of the diode is connected to negative terminal of high
voltage battery and n-section of the diode is connected to positive terminal of the same battery, then
junction is said to be reverse biased.
When reverse bias voltage increases, initially there is a very small reverse current flow, which remains
almost constant with bias. But when reverse bias voltage increases to sufficiently high value, the reverse
current suddenly increases to a large value. This voltage at which breakdown of junction diode occurs
(suddenly large current flow) is called zener breakdown voltage or inverse voltage. The breakdown voltage
may^tarts from one volt to several hundred volts, depending upon dopant density and the depletion layer.

Diagram
Procedure
For forward-bias

1. Make circuit diagram as shown in diagram.


2. Make all connections neat, clean and tight.
3. Note least count and zero error of voltmeter (V) and milli-ammeter (mA).
4. Bring moving contact of potential divider (rheostat) near negative end and insert the key K.
Voltmeter V and milli-ammeter mA will give zero reading.
5. Move the contact a little towards positive end to apply a forward-bias voltage (VF) of
0. 1 V. Current remains zero.
6. Increase the forward-bias voltage upto 0.3 V for Ge diode. Current remains zero, (It is due to
junction potential barrier of 0.3 V).
7. Increase VF to 0.4 V. Milli-ammeter records a small current.
8. Increase VF in steps of 0.2 V and note the corresponding current. Current increases first
slowly and then rapidly, till VF becomes 0.7 V.
9. Make VF = 0.72 V. The current increases suddenly. This represents “forward break-down”
stage.
10. If the VF increases beyond “forward breakdown” stage, the forward current does not change
much. Now take out the key at once.
11. Record your observations as given ahead.
For reverse-bias
12. Make circuit diagram as shown in diagram.
13. Make all connections neat, clean and tight.
14. Note least count and zero error of voltmeter (V) and micro-
15. Bring moving contact of potential divider (rheostat) near positive end and insert the key K
Voltmeter V and micro-
16. Move the contact towards negative end to apply a reverse-bias voltage (VR) of 0.5 V, a feebly
reverse current starts flowing.
17. Increase VR in steps of 0.2 V. Current increases first slowly and then rapidly till VR becomes
20 V. Note the current.
18. Make VR = 25 V. The current increases suddenly. This represents “reverse break-down”
stage. Note the current and take out the key at once.

Observations For forward-bias


Range of voltmeter = …..V
Least count of voltmeter = …..V
Zero error of voltmeter = …..V
Range of milli-ammeter = …..mA
Least count of milli-ammeter = …..mA
Zero error of milli-ammeter = …..mA
Table for forward-bias voltage and forward current

For reverse-bias
Range of voltmeter = …..V
Least count of voltmeter = …..V
Zero error of voltmeter = …..V
Range of micro-ammeter A
Least count of micro- A
Zero error of micro-ammeter = …..
2. Table for reverse-bias voltage and reverse current

Result
Junction resistance for forward-bias = 40 ohms
Junction resistance for reverse-bias = 2 x 106 ohms.
Precautions

1. All connections should be neat, clean and tight.


2. Key should be used in circuit and opened when the circuit is not being used.
3. Forward-bias voltage beyond breakdown should not be applied.
4. Reverse-bias voltage beyond breakdown should not be applied.

Sources of error
The junction diode supplied may be faulty.

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