ECE214: Electronics 1

(Electronic Devices and Circuits)

Module

Ma. Aimee F. Yabao

Instructor

College of Engineering and Architecture

BSECE
2024
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technological, professional, research and
extension programs to form principled men
and women of competencies and skills
responsive to local and global development
needs.

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Northwest Samar State University commits
to provide quality outcomes-based
education, research, extension and
production through continual improvement
of all its programs, thereby producing world
class professionals.

CORE VALUES
Resilience. Integrity. Service. Excellence.

INSTITUTIONAL GRADUATE OUTCOMES

Creative and critical thinkers
Life-long learners
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Module 4
Module Title: Diode Circuit Analysis and Applications
Module Description:
In this module, you will learn about the diode circuit analysis and its applications. Three
different diode approximations can be used when analyzing diode circuits. The one used
depends on the desired accuracy of your circuit calculations.

Module Requirements:

At the end of this module, the students will be assessed by a long quiz/exam through
moodle/google classroom.

Lesson no. 1: First, Second, and Third Approximation

Let’s Read (Discussion):

First Approximation

The first approximation treats a forward-biased diode like a closed switch with a voltage drop
of zero volts, as shown in Fig. 27–11 a . Likewise, the first approximation treats a reverse-
biased diode like an open switch with zero current, as shown in Fig. 27–11 b. The graph in
Fig. 27–11 c indicates the ideal forward- and reverse-bias characteristics.

The first approximation of a diode is often used if only a rough idea is needed of what
the circuit voltages and currents should be.

The first approximation is sometimes called the ideal diode approximation.

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Second Approximation

The second approximation treats a forward-biased diode like an ideal diode in series with a
battery, as shown in Fig. 27–12 a. For silicon diodes, the battery voltage is assumed to be
0.7V, the same as the barrier potential, VB, at a silicon p-n junction.

The second approximation of a reverse-biased diode is an open switch. See Fig. 27–
12 b.

The graph in Fig. 27–12 c indicates the forward- and reverse-bias characteristics of
the second approximation. Notice that the diode is considered off until the forward voltage,
VF, reaches 0.7 V. Also, the diode is assumed to drop 0.7 V for all currents that pass through
it.

The second approximation is used if more accurate answers are needed for circuit
calculations.

Third Approximation

The third approximation of a diode includes the bulk resistance, designated rB. The bulk
resistance, rB, is the resistance of the p and n materials. Its value is dependent on the doping
level and the size of the p and n materials.

The third approximation of a forward-biased diode is shown in Fig. 27–13 a. The total
diode voltage drop using the third approximation is calculated using Formula (27–2).

The bulk resistance, rB, causes the forward voltage across a diode to increase slightly
with increases in the diode current.

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Figure 27–13 b shows the third approximation of a reverse-biased diode. The resistance
across the open switch illustrates the high leakage resistance for the reverse-bias condition.
Notice the small leakage current in the graph of Fig. 27–13 c when the diode is reverse-biased.
This is a result of the high resistance that exists when the diode is reverse-biased.

More on Bulk Resistance

The graph in Fig. 27–13 c shows the forward- and reverse-bias characteristics included with
the third approximation. Notice the slope of the diode curve when forward-biased. The value
of the bulk resistance, rB, can be determined by using Formula (27–3).

where ΔV represents the change in diode voltage produced by the changes in diode current, ΔI

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Lesson no. 2: DIODE RATINGS

Let’s Read (Discussion):

The following is a list of maximum ratings and electrical characteristics of semiconductor

diodes.

Breakdown Voltage Rating, VBR

The reverse breakdown voltage rating is extremely important since the diode is usually
destroyed if this rating is exceeded. The breakdown voltage, VBR, is the voltage at which
avalanche occurs.

This rating can be designated by any of the following: peak inverse voltage (PIV); peak
reverse voltage (PRV); breakdown voltage rating (VBR); or peak reverse voltage maximum
(VRRM). There are other ways to designate the breakdown voltage rating, however; those most
commonly used are listed here. Breakdown voltage ratings are maximum ratings and should
never be exceeded

Average Forward-Current Rating, IO

This important rating indicates the maximum allowable average current that the diode can
handle safely. The average forward-current rating is usually designated as IO. Exceeding the
diode’s IO rating will destroy the diode.

Maximum Forward-Surge Current Rating, IFSM

The maximum forward-surge current (IFSM) rating is the maximum instantaneous current the
diode can handle safely from a single pulse. Diodes are often connected to large electrolytic
capacitors in power supplies, as shown in the next section. When power is first applied, the
initial charge current for the capacitor can be very high. Exceeding the IFSM rating will destroy
the diode.

Maximum Reverse Current, IR

Almost all data sheets list at least one value of reverse current, IR, for a specified amount of
reverse-bias voltage. For example, the data sheet of a 1N4002 silicon diode specifies a typical
IR of 0.05 A for a diode junction temperature, TJ, of 25ºC and a reverse voltage, VR, of 100 V.
With these data, the reverse resistance, RR, of the diode can be calculated:

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It should be emphasized that the maximum ratings of a diode should never be exceeded
under any circumstances. If any maximum ratings are exceeded, there is a good chance the
diode will fail and need to be replaced.

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