FE QB ANS
FE QB ANS
1. Describe forward bias of a diode & explain significance of knee of characteristic curve in forward bias.
Forward Bias of a Diode
In forward bias, the anode of the diode is connected to the positive terminal of a power source, and the
cathode is connected to the negative terminal. This arrangement reduces the potential barrier at the p-n
junction, allowing current to flow through the diode.
Significance of the Knee of the Characteristic Curve in Forward Bias
The knee of the characteristic curve, also known as the "knee voltage" or "cut-in voltage," is the point at
which the diode starts to conduct significantly. For silicon diodes, this is around 0.7V; for germanium diodes,
it is around 0.3V.
Importance:
1. Onset of Conduction: The knee voltage marks the voltage level at which the diode begins to allow
substantial current to flow.
2. Circuit Design: It is crucial for designing and analyzing circuits, as it indicates when the diode will start
conducting.
3. Modeling and Simulation: Helps in accurately modeling the diode's behavior in electronic circuits.
4. Power Considerations: Essential for predicting power dissipation and managing thermal performance.
Summary
Feature Ideal Diode Model Practical Diode Model
Forward voltage drop 0V ~0.7V (silicon), ~0.3V
(germanium)
Forward resistance 0Ω Small, finite
Reverse Current 0A Small leakage current
Reverse Breakdown None Specific breakdown
voltage
Temperature Effects None Varies with temperature
The ideal model is theoretical, while the practical model reflects real-world behavior.
3. Explain zener diode as voltage regulator. 4. How does PN junction diode act as switch.
Zener Diode as Voltage Regulator PN Junction Diode as a Switch
A Zener diode is used as a voltage regulator to maintain a A PN junction diode functions as an electronic switch by
constant output voltage despite variations in the input toggling between conducting (ON) and non-conducting
voltage or load conditions. (OFF) states based on the applied voltage.
Operation: Forward Bias (Switch ON):
1. Reverse Bias: The Zener diode is reverse biased. -Operation: Anode is positive relative to the cathode.
2. Zener Breakdown: When the reverse voltage reaches the - State: Depletion region narrows, allowing current flow.
Zener breakdown voltage (Vz), the diode conducts and - Voltage Drop: Small forward voltage drop (typically 0.7V
stabilizes the voltage across its terminals. for silicon diodes).
Circuit Configuration: Reverse Bias (Switch OFF):
- Series Resistor (R): Limits the current through the Zener -Operation:Anode is negative relative to the cathode
diode. -State: Depletion region widens, preventing current flow.
- Load (RL): Connected in parallel with the Zener diode. -Leakage Current: Negligible leakage current.
Working: Switching Behavior
1.Input Voltage < Vz: Zener diode does not conduct; load - ON State (Forward Bias):
voltage equals input voltage. - Voltage: Positive on anode.
2.Input Voltage ≥ Vz: Zener diode conducts, maintaining - Current: Significant flow.
the load voltage at Vz. Excess voltage is dropped across the - Function: Acts as a closed switch.
series resistor. - OFF State (Reverse Bias):
Advantages: - Voltage: Negative on anode.
- Stable Output Voltage:Provides a constant output voltage. - Current: Almost no flow.
- Simple Design: Easy to implement with minimal - Function: Acts as an open switch.
components. Applications
Applications: 1.Digital Circuits: Used as switches in logic circuits.
- Power Supplies: Provides stable reference voltage. 2. Rectifiers: Convert AC to DC in power supplies.
- Protection Circuits: Prevents overvoltage conditions. 3. Signal Modulation: Rapid switching in communication
-Voltage References:Used in various analog and digital systems.
circuits. In forward bias, the diode conducts, acting as a closed
The Zener diode keeps the voltage across the load constant switch. In reverse bias, it blocks current, acting as an open
at Vz, regardless of changes in Vin or RL. switch.
5. Explain the concept of zener breakdown.
Concept of Zener Breakdown - Avalanche Multiplication: These free electrons can
Zener breakdown is a phenomenon that occurs in Zener collide with other atoms, creating more electron-hole
diodes when they are reverse biased. It allows the diode to pairs and leading to a chain reaction of charge carrier
maintain a stable and constant voltage across its terminals, generation.
even when the input voltage varies. This characteristic makes - Constant Voltage: The diode maintains a nearly
Zener diodes useful for voltage regulation. constant voltage (Vz) across it, even as the current
Key Points of Zener Breakdown: increases, provided the current does not exceed the
1.Reverse Bias Operation: diode's maximum rating.
- A Zener diode is designed to operate in reverse bias, 4. Zener and Avalanche Breakdown:
meaning the positive terminal is connected to the cathode - For breakdown voltages below approximately 5V, the
and the negative terminal to the anode. Zener effect (quantum mechanical tunneling)
2. Breakdown Voltage: predominates.
- The Zener breakdown voltage (Vz) is the reverse voltage at - For higher breakdown voltages, the avalanche
which the Zener diode starts conducting significant current. breakdown (impact ionization) predominates.
- This voltage is carefully controlled during the - Both effects can occur simultaneously in diodes with
manufacturing process to be precise for specific applications. breakdown voltages around 5-7V.
3. Mechanism of Breakdown: Applications:
-High Electric Field: When the reverse voltage applied across 1.Voltage Regulation: Provides a stable reference voltage
the diode reaches the Zener breakdown voltage, the electric in power supply circuits.
field across the depletion region becomes very strong. 2.Overvoltage Protection: Protects circuits by clamping
- Electron Movement: This strong electric field is sufficient to the voltage to a safe level.
pull electrons from their valence bands into the conduction 3.Voltage Reference: Used in precision circuits like analog-
band. to-digital converters.
6. Explain how diode is reverse biased. Explain depletion region in reverse bias.
Reverse Biasing of a Diode and Depletion Region 3.Width: The width of the depletion region increases with
Reverse Biasing: increasing reverse bias voltage.
When a diode is reverse biased, the positive terminal of the 4.Barrier Potential: The depletion region acts as a
voltage source is connected to the diode's n-type potential barrier, preventing the flow of majority carriers
semiconductor, and the negative terminal is connected to the p- across the junction.
type semiconductor. This arrangement creates an electric field 5.Zero Current Flow: In ideal conditions, there is no
across the diode that opposes the flow of majority carriers current flow in reverse bias because the depletion region
(electrons in the n-region and holes in the p-region), hindering acts as an insulator, blocking the flow of majority carriers.
current flow through the diode. Summary:
Depletion Region: Reverse biasing a diode creates a depletion region at the
1.Formation: In reverse bias, the majority carriers are pushed junction, where charge carriers are depleted, creating a
away from the junction due to the applied voltage. This leads to potential barrier. This barrier prevents current flow in the
the formation of a depletion region, which is essentially a region reverse direction, making the diode behave as an
depleted of charge carriers. insulator under reverse bias conditions.
Forward Biasing of a Diode 4.Current Flow: Once the forward voltage exceeds a certain
Forward biasing a diode involves applying a voltage in a threshold (typically around 0.7V for silicon diodes), the
direction that allows current to flow easily through the potential barrier is sufficiently lowered, and current can flow
diode. Here's how it works: easily through the diode.
1.Voltage Application: The positive terminal of the voltage 5.Low Resistance: In forward bias, the diode exhibits low
source is connected to the anode of the diode, and the resistance to the flow of current, behaving like a closed
negative terminal is connected to the cathode. switch.
2.Reduction of Barrier Potential: The forward voltage Summary:
reduces the potential barrier at the junction between the Forward biasing a diode allows current to flow through it by
p-type and n-type semiconductors in the diode. reducing the potential barrier at the junction. This process
3.Conduction of Current: Electrons from the n-type region involves applying a positive voltage to the anode and a
and holes from the p-type region are pushed towards the negative voltage to the cathode, resulting in the conduction
junction, reducing the width of the depletion region. of current through the diode.
Dark current refers to the small current that flows through a 4.Impact: Dark current can limit the sensitivity
photodiode even when it is not exposed to any light. It occurs due and dynamic range of photodiodes in low-light
to the thermal generation of electron-hole pairs within the conditions, as it adds to the signal even when no
photodiode's semiconductor material. light is present. Therefore, minimizing dark
1.Thermal Generation: Even in the absence of light, thermal current is crucial for improving the performance
energy can create electron-hole pairs within the semiconductor of photodiodes in applications requiring high
material of the photodiode. sensitivity and precision.
2.Minority Carrier Flow: These thermally generated minority 5.Compensation: In some applications, dark
carriers (electrons in the p-type region and holes in the n-type current can be compensated for by subtracting
region) contribute to a small amount of current flow through the the measured dark current from the overall
diode. current signal detected by the photodiode. This
3.Magnitude: The magnitude of dark current is typically very low, helps in obtaining more accurate measurements,
on the order of nanoamperes to microamperes, depending on especially in low-light conditions.
factors such as the material and temperature of the photodiode.
9. Describe reverse bias of a diode & explain significance of knee of characteristic curve in reverse bias.
Reverse Bias of a Diode Significance of the Knee of the Characteristic Curve in Reverse Bias
Reverse biasing a diode involves applying The knee of the characteristic curve in reverse bias is a critical point that
a voltage in a direction that opposes the signifies the onset of significant breakdown voltage, leading to avalanche
natural flow of current through the diode. breakdown or Zener breakdown in the diode.
1.Voltage Application: The positive 1. Avalanche Breakdown: In some diodes, especially those with high reverse
terminal of the voltage source is bias voltages, the knee of the characteristic curve marks the point where the
connected to the cathode of the diode, electric field is strong enough to cause avalanche breakdown. In this
and the negative terminal is connected to breakdown mechanism, minority carriers gain enough kinetic energy from
the anode. the electric field to knock additional electrons from the crystal lattice,
2. Increase of Barrier Potential: The creating a cascade effect that rapidly increases current flow.
reverse voltage increases the potential 2.Zener Breakdown: For diodes designed for Zener breakdown, the knee of
barrier at the junction between the p- the characteristic curve represents the point where the Zener breakdown
type and n-type semiconductors in the voltage is reached. Beyond this voltage, the diode starts conducting in
diode. reverse bias, maintaining a nearly constant voltage drop across its terminals.
3. Widening of Depletion Region: The 3.Limitation in Reverse Voltage: The knee of the characteristic curve also
reverse voltage causes the majority indicates the maximum reverse voltage that the diode can withstand before
carriers (electrons in the p-type region experiencing breakdown. Exceeding this voltage can lead to irreversible
and holes in the n-type region) to be damage to the diode.
pushed away from the junction, widening Understanding the knee of the characteristic curve in reverse bias is crucial
the depletion region. for selecting the appropriate diode for specific applications, especially those
4.High Resistance: In reverse bias, the requiring precise control over breakdown voltage or voltage regulation in
diode exhibits high resistance to the flow reverse bias conditions.
of current, behaving like an open switch.
A PN junction diode can act as a switch by exploiting its unique - The reverse bias increases the potential barrier at the
behavior under forward and reverse bias conditions. junction, preventing the flow of majority carriers
1.Forward Bias (Switch ON): (electrons in the n-region and holes in the p-region)
- When the diode is forward biased (positive voltage applied to across the junction.
the anode and negative voltage to the cathode), it allows current - In this state, the diode behaves like an open switch,
to flow easily. prohibiting the flow of current through it.
- The forward bias reduces the potential barrier at the junction,
enabling the diode to conduct electricity. By controlling the biasing voltage applied to the diode,
- In this state, the diode behaves like a closed switch, allowing it can be switched between the conducting (ON) and
current to flow through it. non-conducting (OFF) states, effectively acting as a
2.Reverse Bias (Switch OFF): switch in electronic circuits. This characteristic is
- When the diode is reverse biased (positive voltage applied to fundamental in various applications, including signal
the cathode and negative voltage to the anode), it blocks the routing, logic gates, and power regulation circuits.
flow of current.
A Zener diode operates in the reverse-bias mode and is designed 3.Load Regulation:- The Zener diode's ability to
to maintain a constant voltage across its terminals when regulate voltage is not affected by variations in the
operated in its breakdown region. This unique characteristic load current within its specified limits.
makes it useful as a voltage regulator in electronic circuits. - It can provide a stable output voltage even with
1.Reverse Breakdown: - When the reverse voltage across the changes in the load resistance or current.
Zener diode exceeds its breakdown voltage (known as the Zener 4.Circuit Implementation:- In practical circuits, a
voltage), it enters the breakdown region. Zener diode is often connected in parallel with a
- In this region, the Zener diode starts conducting heavily in load resistor.
reverse bias, allowing current to flow through it while - By appropriately selecting the Zener diode's
maintaining a nearly constant voltage drop across its terminals. breakdown voltage and using appropriate series
2.Voltage Regulation:- The Zener diode effectively acts as a resistors, the desired output voltage can be
voltage reference, clamping the voltage across its terminals to achieved.
the breakdown voltage (Vz). 5.Applications:- Voltage regulation in power
- Even if the input voltage varies or fluctuates, the Zener diode supplies, voltage references in precision circuits,
maintains a stable output voltage, compensating for changes in overvoltage protection, and stabilizing voltage levels
the input voltage. in various electronic devices.
15. Explain the working of reverse bias diode. Explain depletion region in reverse bias.
A half-wave rectifier turns AC into DC by letting only one side of the Waveforms:
AC signal pass through. Vin: Alternating between positive and negative.
Circuit: It's a simple setup with a diode (D1) connected in series with Vout: Only positive half-cycles pass through,
the input voltage (Vin) and the output voltage (Vout). resulting in a pulsating DC waveform.
Operation:Positive Half-Cycle: When Vin is positive, D1 conducts, Summary: It's a basic, inexpensive way to convert
allowing current to flow to Vout. AC to DC, but the output has noticeable ripples.
Negative Half-Cycle: When Vin is negative, D1 blocks current flow, For smoother DC, a full-wave rectifier is better
leaving Vout at zero. suited.
18. Explain Photo-diodes .what is dark current. What are its applications?
3.Remote Controls:
- Infrared photodiodes power remote control systems for TVs,
DVD players, and air conditioners.
19. Draw V-I Characteristic in Zener diode? Explain the breakdown region in Zener diode?
20. With circuit diagram and waveforms, explain centre-tapped full wave rectifier.
A center-tapped full-wave rectifier circuit is a type of rectifier Waveforms:
that converts AC voltage into DC voltage using a center- 1.Input AC Voltage (Vin):
tapped transformer and two diodes. - Sinusoidal waveform representing the input AC
Operation: voltage.
2. Define modulation index with reference to AM & Draw AM waveform for over modulation case.
3. Explain construction and working of Optical fiber cable.
- AM: - Easier to implement. - More affected by noise. - Used for long-distance broadcasting.
- FM: - Better sound quality. - Less affected by noise. - Used for high-fidelity broadcasts.
5. What are the different elements of Communication Channel?
The GSM system comprises several key components that work 7. Authentication Center (AUC): - Ensures security
together to facilitate mobile communication through authentication and encryption.
1.Mobile Station (MS): - Includes the mobile device (ME) and the 8. Equipment Identity Register (EIR):
subscriber identity module (SIM). - Stores mobile equipment information to prevent
2. Base Transceiver Station (BTS): unauthorized usage.
- Handles radio communication with mobile stations. 9.Gateway Mobile Switching Center (GMSC):
3. Base Station Controller (BSC): - Manages multiple BTSs. - Links GSM network to external networks.
- Controls handovers and radio channels. 10.Public Switched Telephone Network (PSTN):
4. Mobile Switching Center (MSC):- Core of the GSM network. - Traditional landline network, interconnected with
- Handles call switching and mobility management. GSM via GMSC.
5. Visitor Location Register (VLR): Functionality involves communication between these
- Stores temporary subscriber information. components, allowing for secure and efficient mobile
6.Home Location Register (HLR):Stores permanent subscriber data communication.
The cellular concept is a fundamental principle in mobile 2. Increased Capacity: By dividing the coverage area into
communication schemes, particularly in cellular networks smaller cells, the network can support more users
like GSM (Global System for Mobile Communications) and simultaneously. This is because the same frequency can be
its successors like 3G, 4G, and 5G. reused in different cells without causing interference, thus
The cellular concept involves dividing a geographic region increasing the overall capacity of the network.
into smaller areas called cells. Each cell is served by a base 3. Better Coverage and Quality: Cells can be strategically
station, also known as a cell tower or Node B, which placed to provide better coverage and signal strength across
facilitates communication between mobile devices within the entire geographic area. This helps in maintaining a
that cell and the rest of the network. consistent quality of service for mobile users.
By dividing the coverage area into cells, cellular networks 4. Handover Support: As a mobile device moves from one
can achieve several benefits: cell to another while in communication, the network
1. Frequency Reuse: Each cell uses a subset of the available seamlessly transfers the connection to the new cell without
frequency spectrum, and neighboring cells use different interrupting the ongoing communication. This process,
subsets to avoid interference. This allows for efficient use known as handover or handoff, is essential for maintaining
of limited frequency resources. continuity in calls and data sessions.
Fiber optic cables are a crucial component of modern 4. Secure Transmission: Fiber optic cables do not radiate
telecommunications infrastructure, enabling high-speed data electromagnetic signals, making them difficult to tap into
transmission over long distances. and providing a high level of security for data transmission.
Fiber Optic Cable: Fiber optic cables are thin, flexible strands 5. Lightweight and Flexible: Fiber optic cables are
of glass or plastic that transmit data in the form of light pulses. lightweight and flexible, allowing for easy installation in
They consist of a core, which carries the light signals, various environments, including underground, underwater,
surrounded by a cladding layer that reflects the light back into and aerial installations.
the core, ensuring minimal signal loss. 6. Longevity: Fiber optic cables have a long lifespan and
Key Features: require minimal maintenance, making them a cost-
1.High Bandwidth: Fiber optic cables offer significantly higher effective solution for long-term telecommunications
bandwidth compared to traditional copper cables, allowing for infrastructure.
the transmission of large amounts of data over long distances. Applications:
2. Low Attenuation: Light signals in fiber optic cables -Telecommunications: Fiber optic cables form the
experience minimal attenuation (signal loss) over long backbone of telecommunications networks, enabling high-
distances, enabling data transmission over thousands of speed internet, voice, and video communication services.
kilometers without the need for signal boosters. - Data Centers: Fiber optic cables are used to interconnect
3. Immunity to Electromagnetic Interference: Unlike copper servers and networking equipment within data centers,
cables, fiber optic cables are immune to electromagnetic facilitating high-speed data transmission between devices.
interference, making them ideal for use in environments with - Broadcasting: Fiber optic cables are used for transmitting
high electromagnetic noise, such as near power lines or in video signals in broadcasting applications, including
industrial settings. television broadcasting and live event coverage.
10. Explain the need for Modulation?
Modulation is a fundamental process in communication systems 4.Transmission Range: Modulation techniques can be
that involves varying a carrier signal's properties, such as its used to adjust the transmission range and coverage
amplitude, frequency, or phase, in order to encode information area of communication systems. By modulating the
onto it. carrier signal's parameters, such as its power or
1.Bandwidth Efficiency: Modulation allows for the transmission of frequency, communication systems can adapt to
information over a limited bandwidth efficiently. By modulating a different transmission environments and distances.
carrier signal, multiple signals can be transmitted simultaneously 5.Security: Modulation can enhance the security of
over the same medium without interfering with each other, thus communication systems by encoding information in a
maximizing the utilization of available bandwidth. form that is difficult for unauthorized parties to
2.Signal Integrity: Modulation helps in preserving the integrity of intercept or decipher. Techniques such as spread
the transmitted signal. By modulating the carrier signal, spectrum modulation and encryption can be used to
information can be encoded in a form that is less susceptible to secure transmitted data against eavesdropping and
noise, distortion, and interference during transmission, ensuring tampering.
reliable communication. 6. Multiplexing: Modulation enables multiplexing,
3.Compatibility: Modulation enables compatibility between which is the transmission of multiple signals over a
different types of communication systems and devices. By single communication channel. By modulating each
standardizing modulation schemes, communication systems can signal onto a different carrier frequency or using
ensure that different devices can transmit and receive signals with different modulation schemes, multiple users can
each other, even if they are manufactured by different vendors or share the same communication medium without
operate on different frequencies. interfering with each other.
11. What is baseband communication? Explain limitation of communication & need for modulation.
1.Bandwidth Efficiency: Modulation allows for the transmission of 4. Compatibility: Modulation facilitates
signals over a limited bandwidth efficiently. By modulating a carrier compatibility between different
signal, multiple signals can be transmitted simultaneously over the communication systems and devices. By
same medium without interfering with each other, maximizing the standardizing modulation schemes,
utilization of available bandwidth. communication systems can ensure that
different devices can transmit and receive
2.Long-Distance Transmission: Modulation enables the transmission signals with each other, even if they are
of signals over long distances. Without modulation, signals would manufactured by different vendors or
suffer from attenuation (signal loss) over long distances, making operate on different frequencies.
long-distance communication impractical.
5. Signal Security: Certain modulation
3.Interference Reduction: Modulation helps in reducing interference techniques, such as spread spectrum
from other signals or noise present in the medium. By modulating modulation and encryption, provide
the carrier signal, information can be encoded in a form that is less enhanced security by making it more difficult
susceptible to noise and interference, ensuring reliable for unauthorized parties to intercept or
communication. decipher transmitted data.
UNIT-2
1. Draw and Explain input and output characteristics of transistor for CE configuration.
Summary: Input characteristics help understand the base current's dependency on base-emitter voltage,
while output characteristics illustrate how the collector current varies with the collector-emitter voltage for
different base currents, showing key operating regions of the transistor.
2. What names are applied to the two types of BJT transistors? Sketch the basic construction of each and label the
various minority and
Two Types of BJT Transistors: 1.NPN Transistor 2. PNP Transistor - Since the base is thin and lightly doped, most of these
NPN Transistor electrons diffuse through to the collector, creating a
Construction:- Layers: Consists of three layers: N-type (emitter), larger current flow from the collector to the emitter.
P-type (base), and N-type (collector). PNP Transistor:
- Doping Levels: Emitter is heavily doped, base is lightly doped - In a PNP transistor, the majority carriers in the emitter
and thin, collector is moderately doped and larger than the are holes.
emitter. - When a small current is applied to the base, holes are
Minority Carriers:- Emitter: Electrons (majority), Holes (minority) injected into the base from the emitter.
-Base: Holes (majority), Electrons (minority) - Similar to the NPN transistor, the thin and lightly
-Collector: Electrons (majority), Holes (minority) doped base allows most of these holes to diffuse
PNP Transistor through to the collector, creating a larger current flow
Construction:- Layers: Consists of three layers: P-type (emitter), from the emitter to the collector.
N-type (base), and P-type (collector). Summary- NPN and PNP transistors** are the two types
- Doping Levels: Emitter is heavily doped, base is lightly doped of Bipolar Junction Transistors (BJTs).
and thin, collector is moderately doped and larger than the - NPN: Consists of an N-type emitter, P-type base, and
emitter. N-type collector.
Minority Carriers:- Emitter: Holes (majority), Electrons (minority) - PNP:Consists of a P-type emitter, N-type base, and P-
-Base: Electrons (majority), Holes (minority) type collector.
-Collector: Holes (majority), Electrons (minority) -Operation: NPN transistors use electrons as majority
Explanation: NPN Transistor:- In an NPN transistor, the majority carriers, while PNP transistors use holes.
carriers in the emitter are electrons. - Function: The thin and lightly doped base region
- When a small current is applied to the base, electrons are allows minority carriers to pass through, enabling the
injected into the base from the emitter. transistor's amplification properties.
4. What are the biasing conditions for BE & BC junction for transistor to operate as an amplifier. Based on these
conditions explain the operation of transistor.
To operate as an amplifier, a transistor typically operates in - This modulation causes a larger current to flow from the
the active region. This requires specific biasing conditions for Collector (C) to the Emitter (E), controlled by the small input
both the Base-Emitter (BE) and Base-Collector (BC) junctions. current at the Base (B).
Biasing Conditions for BE Junction: 2. Reverse Biasing BC Junction:- The reverse biasing of the
1.Forward Bias:The Base-Emitter junction is forward biased, Base-Collector junction ensures that the majority carriers
meaning the voltage at the Base (B) is slightly higher than the from the Collector (C) do not flow into the Base (B). Instead,
voltage at the Emitter (E). This allows majority charge carriers they are collected at the Collector (C) terminal.
(electrons for NPN, holes for PNP) to flow across the junction. -This allows the transistor to act as an amplifier by
Biasing Conditions for BC Junction: controlling the flow of current from the Collector (C) to the
1.Reverse Bias: The Base-Collector junction is reverse biased, Emitter (E) based on the small input signal at the Base (B).
meaning the voltage at the Base (B) is slightly lower than the Summary:
voltage at the Collector (C). This prevents majority charge - BE Junction Biasing: Forward biasing allows input signal
carriers from flowing across the junction, creating a depletion modulation.
region. - BC Junction Biasing: Reverse biasing prevents excessive
Transistor Operation Explanation: current flow from Collector to Base, facilitating
1. Forward Biasing BE Junction: - When a small input signal amplification.
is applied to the Base (B) with respect to the Emitter (E), it - Transistor Operation: The input signal at the Base controls
modulates the flow of majority charge carriers (electrons or the larger current flow from Collector to Emitter, enabling
holes) through the Base-Emitter junction. amplification of the input signal.
5. Draw the constructional diagram of N-channel E-MOSFET and give transfer characteristics for same with
necessary parameters.
6. Explain in detail operation of single stage-CE amplifier with circuit diagram and waveforms.
A single-stage Common Emitter (CE) amplifier is one of the - As the base current varies, the collector current also varies,
most commonly used configurations in transistor amplifiers. resulting in a varying voltage drop across the collector
It provides moderate voltage gain, high input impedance, and resistor RC.
low output impedance. Let's delve into its operation in detail, - The amplified signal appears across the load resistor RL.
including the circuit diagram and waveform explanations:
Components: 4.Output Signal:
1. Transistor (NPN Bipolar Junction Transistor): - The amplified output signal appears across the load
2. Biasing Resistors: resistor RL, which can be connected to the subsequent
-Emitter Resistor: RE stages of amplification or to the output device.
-Base Resistor: RB Waveforms:
-Collector Resistor: RC 1.Input Signal (Vin):
3.DC Power Supply: VCC - A sinusoidal waveform representing the input signal Vin
4.Input Signal Source: Vin with varying amplitude.
5.Output Load: RL 2.Base Voltage (VBE):
6.Coupling Capcitors: C1 and C2 (for blocking DC - The voltage across the base-emitter junction of the
components) transistor, varying in accordance with Vin but biased at a
Operation: certain DC level.
1. Biasing: 3.Collector Voltage (VCE):
- The biasing resistors RB and RE are used to establish the - The voltage across the collector-emitter junction of the
operating point (Q-point) of the transistor. transistor, showing variations corresponding to the
- RB provides the necessary biasing voltage to the base of amplified input signal.
the transistor to keep it in the active region. 4.Collector Current (IC):
- RE provides stability to the biasing point and helps in - The current flowing through the collector of the
setting the DC operating point. transistor, showing variations according to the amplified
2. Signal Amplification: input signal.
- When an AC input signal Vin is applied, it appears across
the base-emitter junction of the transistor. Summary:
- This signal causes variations in the base current, which in A single-stage CE amplifier provides voltage amplification by
turn modulates the collector current of the transistor due to using a transistor in the common emitter configuration. The
its current amplification properties. transistor amplifies the input signal by modulating its
3.Transistor Action: collector current. This configuration offers moderate voltage
- The transistor amplifies the input signal by a factor known gain, high input impedance, and low output impedance,
as its current gain (β). making it suitable for various applications in audio
amplifiers, signal processing, and communication systems.
7. What is the major physical difference between Enhancement and Depletion type MOSFET? What type of voltage
is necessary at the gate of N channel E-MOSFET to cause current flow, Explain?
The major physical difference between enhancement-mode - Therefore, the device is normally on without an applied
(E-MOSFET) and depletion-mode (D-MOSFET) metal-oxide- gate-source voltage, and current flow can be reduced or
semiconductor field-effect transistors (MOSFETs) lies in their stopped by applying an appropriate gate voltage.
intrinsic channel characteristics: In an N-channel enhancement-mode MOSFET (N-E-MOSFET),
1. Enhancement-mode MOSFET (E-MOSFET): a positive voltage relative to the source terminal (Vgs) is
- In an E-MOSFET, the channel between the source and necessary to create a conducting channel between the
drain terminals does not initially exist. source and drain terminals.
- Current flow occurs when a voltage is applied to the gate - When a positive voltage (Vgs > Vth) is applied to the gate
terminal, creating an electric field that attracts charge terminal with respect to the source terminal, it creates an
carriers (electrons for N-channel, holes for P-channel) to electric field in the oxide layer beneath the gate.
form the conducting channel. - This electric field attracts electrons from the N-type
- Therefore, the device is normally off without an applied substrate towards the surface under the gate, forming a
gate-source voltage. conductive channel between the source and drain.
2. Depletion-mode MOSFET (D-MOSFET): - Once the channel is formed, current can flow from the
- In a D-MOSFET, the channel between the source and source to the drain through this channel.
drain terminals exists even when no voltage is applied to the - The threshold voltage (Vth) is the minimum gate-source
gate terminal. voltage required to induce the formation of the conducting
- The channel is formed during fabrication and is depleted channel. It is the voltage at which the transistor just begins
of majority carriers (electrons for N-channel, holes for P- to conduct significant current.
channel) by applying a reverse bias to the gate. - Therefore, to turn on an N-E-MOSFET, the gate voltage (Vgs)
- Current flow occurs when a gate-source voltage is applied must be greater than the threshold voltage (Vth), ensuring
to modulate the conductivity of the already existing channel. the formation of the conducting channel and allowing
current flow between the source and drain terminals.
8. Draw and Explain input and output characteristics of transistor for CE configuration.
Sure, let's draw and explain the input and output The output characteristics of a transistor in the CE
characteristics of a transistor for the common-emitter configuration show the relationship between the
(CE) configuration. collector current (\(I_C\)) and the collector-emitter
voltage (\(V_{CE}\)) for various values of base current
Input Characteristics: (\(I_B\)).
- Explanation:
The input characteristics of a transistor in the CE - Initially, as the collector-emitter voltage (\(V_{CE}\))
configuration show the relationship between the base increases, the collector current (\(I_C\)) remains
current (\(I_B\)) and the base-emitter voltage relatively constant, indicating the transistor's active
(\(V_{BE}\)) for various values of collector-emitter region operation.
voltage (\(V_{CE}\)). - After reaching a certain point, further increases in
-Explanation: \(V_{CE}\) result in a decrease in \(I_C\), indicating the
- As the base-emitter voltage (\(V_{BE}\)) increases, saturation region where the transistor is fully
the base current (\(I_B\)) also increases. This conducting.
relationship is generally exponential. - Changes in the base current (\(I_B\)) shift the output
- Changes in the collector-emitter voltage (\(V_{CE}\)) characteristics curve horizontally. Higher \(I_B\) values
shift the curve vertically. Higher \(V_{CE}\) values typically lead to higher collector currents for the same
usually correspond to higher base currents for the \(V_{CE}\).
same \(V_{BE}\). - The slope of the output characteristics curve
- The slope of the input characteristics curve indicates represents the output resistance (\(r_o\)) of the
the transistor's transconductance (\(g_m\)), showing transistor, indicating how the output current changes
how effectively it amplifies input signals. with variations in \(V_{CE}\) when \(I_B\) is held
constant.
Output Characteristics:
9. What names are applied to the two types of BJT transistors? Sketch the basic construction of each and label the
various minority and majority carriers in each. Draw the graphic symbol next to each.
10. Explain the construction of BJT in detail. Draw the symbols for npn and pnp BJT. Explain the forward-reverse bias
circuit of BJT. Explain DC Beta and DC Alpha parameters.
Certainly! Here's a condensed version: Symbols:- NPN: Emitter (E) connected to an arrow
BJT Construction: pointing out, Collector (C), Base (B)
- NPN: Emitter (E), Base (B), Collector (C) - PNP: Collector (C) connected to an arrow pointing
- E: Heavily doped with electrons out, Emitter (E), Base (B)
- B: Lightly doped with holes Biasing:- Forward Bias: Positive voltage applied to
- C: Heavily doped with electrons collector and base for NPN (polarities reversed for
- PNP: Emitter (E), Base (B), Collector (C) PNP)
- E: Heavily doped with holes - Reverse Bias: Negative voltage applied to collector
- B: Lightly doped with electrons and base for NPN (polarities reversed for PNP)
- C: Heavily doped with holes These parameters aid in analyzing BJT behavior in
electronic circuits.
11. What is the difference between Enhancement and Depletion type MOSFET? Explain the working of N-channel E-
MOSFET?
13. Draw the typical Collector characteristic curves of BJT. Explain in detail the various regions in the plot. Explain
the concept of DC load line.
The Collector characteristic curves, also known as 3. Saturation Region (On State): - In this region, the base-collector
output characteristics, of a bipolar junction junction is forward-biased as well, similar to the active region.
transistor (BJT) show the relationship between the - However, unlike the active region, the collector-base junction is
collector current (IC) and the collector-emitter also forward-biased.
voltage (VCE) for various base currents (IB). - Saturation occurs when the transistor cannot amplify the input
1. Cutoff Region (Off State): signal further, and the collector current reaches its maximum value
- In this region, both the base-emitter junction (ICsat).
and the base-collector junction are reverse-biased. - In saturation, the collector-emitter voltage (VCE) is very low,
- There is minimal base current (IB ≈ 0) and hence typically around a few hundred millivolts.
negligible collector current (IC ≈ 0). - The transistor behaves like a closed switch with minimal resistance
- The transistor is effectively turned off, and there between the collector and emitter.
is a high resistance between the collector and DC Load Line:- The DC load line is a graphical representation of the
emitter. possible combinations of collector current (IC) and collector-emitter
2. Active Region (Active State): voltage (VCE) for a given transistor circuit.
- This is the region where the BJT operates as an - It is drawn on the collector characteristic curves and represents the
amplifier. transistor's operating conditions under DC biasing.
- In the active region, the base-emitter junction is - The load line is determined by the collector resistor (RC) in the
forward-biased, allowing current to flow from the circuit.
base to the emitter (IB). - The slope of the load line is determined by the reciprocal of the
- Due to the current flow in the base, a much collector resistor (1/RC).
larger current flows from the collector to the - The intersection of the load line with the output characteristic curves
emitter (IC). represents the operating point (Q-point) of the transistor under DC
- The transistor amplifies the input signal applied conditions.
to the base and produces a larger output signal - The Q-point determines the DC operating conditions such as
across the collector-emitter terminals. collector current (ICQ) and collector-emitter voltage (VCEQ).
- The transistor operates linearly in this region, - By adjusting the biasing resistors in the circuit, the Q-point can be set
and changes in the base current result in to achieve the desired transistor operation, such as maximizing gain or
proportional changes in the collector current. ensuring proper biasing conditions.