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tutorial -test1

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Irfan Naqiuddin
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tutorial -test1

Uploaded by

Irfan Naqiuddin
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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SECTION A: 10 OBJECTIVE QUESTIONS

1. What is the value of current and total resistance if Vab = 40 V in the circuit of Figure 1?
A. 18 Ω , 0.53 A

B. 2 Ω , 0.83 A

C. 8 Ω , 0.83 A
D. 18 Ω , 0.83 A

2. Each diode in a center-tapped full-wave rectifier is ……….. -biased and conducts for
………. of the input cycle.

A. Forward, 90°
B. Reverse, 180°
C. Forward, 180°
D. Reverse, 90°

3. The circuit that converts AC voltage into DC voltage is called?

A. Rectifier
B. Modulator
C. Amplifier
D. Regulator

4. Determine the values of VCB and IB for the circuit in Figure 6.

A. 1.4V, 59.7 µA
B. −1.4V, 59.7 µA
C. −9.3V, 3.58 µA
D. 9.3V, 3.58 µA

Figure 6
5. A device which used to couple the AC input from source to rectifier is ……….

A. Regulator
B. Modulator
C. Amplifier
D. Transformer

6. By referring circuit shown in Figure 1, determine the number of branches, essential


nodes and loops.
A. Loops - 3, branches - 2, nodes - 4
B. Loops - 3, branches - 6, nodes – 4
C. Loops - 3, branches - 4, nodes - 8
D. Loops - 3, branches - 6, nodes - 8

7. Figure 3 shows a block diagram of a power supply. Define each part of the power
supply.
A. Transformer, Filter, Rectifier, IC Regulator
B. Transformer, IC Regulator, Rectifier, Filter
C. Transformer, Rectifier, Filter, IC Regulator
D. Transformer, Filter, IC Regulator, Rectifier

8. A Common-Emitter Fixed-Bias configuration for an AC equivalent circuit has the


following properties:
A. High input impedance.
B. High voltage and current gain.
C. Phase shift between input and output is 180°.
D. All of the above.

9. Bipolar Junction Transistor “BJT” consist of


A. two terminals
B. three terminals
C. four terminals
D. five terminals

10. A bipolar junction transistor (BJT) is a type of transistor. How BJT acts at saturation
region?
A. Acts as an amplifier
B. Acts like a short circuit
C. Acts like an open circuit
D. As an rectifier

SECTION B: 2 SUBJECTIVE QUESTIONS


QUESTION 1

(a) A schematic diagram of a series-parallel network circuit is shown in Figure Q1(a).


Given that the resistance for 𝑅1 = 2Ω, 𝑅2 = 4Ω, 𝑅3 = 4Ω, 𝑅4 = 4Ω, 𝑅5 = 2Ω, and 𝑅6 =
8Ω respectively. The supply voltage of the circuit is as follows, 𝑉1 = 20𝑉, 𝑉2 = 8𝑉 and
𝑉3 = 4𝑉. By using Thevenin’s theorem, determine the following:

i) The equivalent voltage, 𝑉𝑇𝐻

ii) The equivalent resistance, 𝑅𝑇𝐻

iii) The current flow and voltage across 𝑅6 .


iv) The Thevenin equivalent circuit.

Vth=13.148, Rth=5.45, Vr6=7.82V,ILoad=0.978A

(b) Figure Q1(b) shows a full-wave rectifier. Silicon diodes is used in the rectifier.
Determine the average output voltage and its percentage ripple.

Figure Q1(b).

ANSWER:Vpri=339.41V, Vscd=67.88V, Vrec=66.48V, Vr(p-p)6.648V, Vdc=63.156V,


Ripple=0.1053, Ripple%=10.53%
QUESTION 2

a. Figure 2(a) shows the characteristics of a silicon BJT transistor. The figures defines a
Q-point at ICQ = 3 mA and VCEQ = 15 V as a point of operation. For an emitter-bias
configuration, if voltage supply, VCC = 26V and resistor of RE = 2.2K Ω. Determine

(i) The resistor of RC, β at the operating point and RB.


(ii) The power dissipated by the transistor.
(iii) The power dissipated by the resistor of RC.
(iv) Explain the emitter-bias configuration is more stable compared to fixed-bias
configuration.

Figure 2(a)

Answer:Icsat=7mA, Rc=1.514K, B=150, Rb=933k, Pcmax=45mW, Pc=13.63mW

b. The Emitter-stabilized bias circuit of Figure 2(b) is characterized as having a value of


37.4 µA for the base current, IB. Without the component of CE (unbypassed), performe
the following:

(i) Draw the AC equivalent circuit,


(ii) Calculate the value of 𝑟𝑒 ,
(iii) Determine the input and output impedances
(iv) Compute the voltage gain, AV
Figure 2(b)

Answer :Ib=35.48µA, Ie=5mA, re=5.2, Zin=89.79KΩ, Zout=2.8KΩ, Av=-3.61

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