DISCRETE SEMICONDUCTORS

DATA SHEET

age

M3D087

PBSS5540Z
40 V low VCEsat PNP transistor
Product specification 2001 Sep 21
Supersedes data of 2001 Jan 26
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

FEATURES QUICK REFERENCE DATA

• Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT
• High current capability VCEO emitter-collector voltage −40 V
• Improved device reliability due to reduced heat IC collector current (DC) −5 A
generation.
ICM peak collector current −10 A
RCEsat equivalent on-resistance <80 mΩ
APPLICATIONS
• Supply line switching circuits PINNING
• Battery management applications PIN DESCRIPTION
• DC/DC converter applications 1 base
• Strobe flash units 2 collector
• Heavy duty battery powered equipment (motor and lamp 3 emitter
drivers)
4 collector
• MOSFET driver applications.

DESCRIPTION handbook, halfpage 4

2, 4
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z.
1

MARKING
3
1 2 3
TYPE NUMBER MARKING CODE
Top view MAM288
PBSS5540Z PB5540

Fig.1 Simplified outline (SOT223) and symbol.

2001 Sep 21 2
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −40 V
VCEO collector-emitter voltage open base − −40 V
VEBO emitter-base voltage open collector − −6 V
IC collector current (DC) − −5 A
ICM peak collector current − −10 A
IBM peak base current − −2 A
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.35 W
Tamb ≤ 25 °C; note 2 − 2 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to in free air; note 1 92 K/W
ambient

Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

2001 Sep 21 3
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 − − −100 nA
VCB = −30 V; IE = 0; Tj = 150 °C − − −50 µA
IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA
hFE DC current gain VCE = −2 V; IC = −500 mA 250 350 −
VCE = −2 V; IC = −1 A; note 1 200 300 −
VCE = −2 V; IC = −2 A; note 1 150 250 −
VCE = −2 V; IC = −5 A; note 1 50 150 −
VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −5 mA − −80 −120 mV
IC = −1 A; IB = −10 mA − −120 −170 mV
IC = −2 A; IB = −200 mA − −110 −160 mV
RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − <55 <80 mΩ
VCEsat collector-emitter saturation voltage IC = −5 A; IB = −500 mA − −250 −375 mV
VBEsat base-emitter saturation voltage IC = −5 A; IB = −500 mA − − −1.3 V
VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A − −0.8 −1.25 V
fT transition frequency IC = −100 mA; VCE = −10 V; 60 120 − MHz
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = Ie = 0; − 90 105 pF
f = 1 MHz

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2001 Sep 21 4
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

MGU391 MGU393
1000 −1.2
handbook, halfpage handbook, halfpage

hFE VBE
(V)
800

(1)
(1) −0.8
600 (2)

400
(2) (3)
−0.4

200 (3)

0 0
−1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

VCE = −2 V. VCE = −2 V.
(1) Tamb = 150 °C. (1) Tamb = 150 °C.
(2) Tamb = 25 °C. (2) Tamb = 25 °C.
(3) Tamb = −55 °C. (3) Tamb = −55 °C.

Fig.2 DC current gain as a function of collector Fig.3 Base-emitter voltage as a function of

current; typical values. collector current; typical values.

MGU395 MGU394
−103 −1.2
handbook, halfpage handbook, halfpage

VCEsat VBEsat
(mV) (V)

(1)
−102 −0.8
(2)

(1)
(2)
(3)
(3)
−10 −0.4

−1 0
−10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

IC/IB = 20. IC/IB = 20.

(1) Tamb = 150 °C. (1) Tamb = 150 °C.
(2) Tamb = 25 °C. (2) Tamb = 25 °C.
(3) Tamb = −55 °C. (3) Tamb = −55 °C.

Fig.4 Collector-emitter saturation voltage as a Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values. function of collector current; typical values.

2001 Sep 21 5
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

MGU392 MGU396
−10 103
handbook, halfpage (2) handbook, halfpage
IC (1) RCEsat
(3)
(A) (Ω)
(4)
−8 (5)
(6) 102
(7)
(8)
−6
(9) 10

−4
(1)
(10)
(2)
1 (3)
−2

0 10−1
0 −0.4 −0.8 −1.2 −1.6 −2 −10−1 −1 −10 −102 −103 −104
VCE (V) IC (mA)

IC/IB = 20.
Tamb = 25 °C.

(1) IB = −150 mA. (5) IB = −90 mA. (9) IB = −30 mA. (1) Tamb = 150 °C.
(2) IB = −135 mA. (6) IB = −75 mA. (10) IB = −15 mA. (2) Tamb = 25 °C.
(3) IB = −120 mA. (7) IB = −60 mA. (3) Tamb = −55 °C.
(4) IB = −105 mA. (8) IB = −45 mA.

Fig.7 Collector-emitter equivalent on-resistance

Fig.6 Collector current as a function of as a function of collector current; typical
collector-emitter voltage; typical values. values.

2001 Sep 21 6
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

D B E A X

y
HE v M A

b1

A1

1 2 3 Lp

e1 bp w M B detail X

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y

1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95
mm 4.6 2.3 0.2 0.1 0.1
1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

97-02-28
SOT223 SC-73
99-09-13

2001 Sep 21 7
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

DATA SHEET STATUS

PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information  Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.

2001 Sep 21 8
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

NOTES

2001 Sep 21 9
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

NOTES

2001 Sep 21 10
Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS5540Z

NOTES

2001 Sep 21 11
Philips Semiconductors – a worldwide company

Contact information

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© Koninklijke Philips Electronics N.V. 2001 SCA73

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/04/pp12 Date of release: 2001 Sep 21 Document order number: 9397 750 08434