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vlsi static and dynamic conditions

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EUNICE JOSHI A P PSGiTECH
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vlsi static and dynamic conditions

Uploaded by

EUNICE JOSHI A P PSGiTECH
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

MOSFET TRANSISTOR CHARACTERISTIC UNDER


STATIC AND DYNAMIC CONDITIONS
nMOS Transistor
NMos transistors are built on a p-type substrate of moderate doping. Source
and drain are formed by diffusing heavily doped n-type impurities (n+)adjacent to
the gate. A layer of silicon dioxide (SiO 2) or glass is place over the substrate in
between the source and drain. Over SiO2, a layer of polycrystalline silicon or
polysilicon is formed, from which the gate terminal is taken.
The following figure shows the structure and symbol of nMOS transistor.R

Fig: 1.1.1 nMOS transistor.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]
Threshold Voltage (Vt)
It can be defined as the voltage applied between the gate and the source of a MOS
device (Vgs) below which the drain-to-source current (Ids) “effectively” drops to
zero. Vt depends on thefollowing:
 Gate conduction material
 Gate insulation material
 Gate insulator thickness
 Channel doping
 Impurities at the silicon-insulator interface

 Voltage between the source and the substrate, Vsb.


Modes of operation of MOS Transistor:
The following are the three modes of operation of nMOS transistor:
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

1. Accumulation mode
2. Depletion mode
3. Inversion mode
a. Accumulation Mode

In this mode a negative voltage is applied to the gate. So there is negative


charge on the gate. The mobile positively charged holes are attracted to the region
beneath the gate.

Fig: 1.1.2 Accumulation Mode.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]
b. Depletion Mode:

In this mode a low positive voltage is applied to the gate. This results in
some positive charge on the gate. The holes in the body are repelled from the
region directly beneath the gate.

Fig: 1.1.3 Depletion Mode.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]

c. Inversion Mode:

In this mode, a higher positive potential exceeding a critical threshold voltage


is applied. This attracts more positive charge to the gate. The holes are repelled further
and a small number of free electrons in the body are attracted to the region beneath
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

the gate. This conductive layer of electrons in the p-type body is called the inversion
layer.

Fig: 1.1.4 Inversion Mode.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]
Behavior of nMOS with different voltages:
The Behavior of nMOS with different voltages can be classified into the
following three cases and is illustrated in below figure.
i. Cut-off region

ii. Linear region

iii. Saturation region


a. Cut-off region:-

In this region Vgs < Vt .The source and drain have free electrons. The body has
free holes but no free electrons. The junction between the body and the source or drain
is reverse biased. So no current will flow. This mode of operation is called cut-off.

Fig: 1.1.5 Cut off region.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

Linear region:-

In this region Vgs >Vt .Now an inversion region of electrons called the channel
connects the source and drain. This creates a conductive path between source and
drain. The number of carriers and the conductivity increases with the gate voltage.
The potential difference between drain and source is V ds =V gs – Vgd. If V
ds=0,there is no electric field tending to push current from drain to source.

Fig: 1.1.6 Linear region.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]

b. Saturation region:-

In this region Vds becomes sufficiently larger than V gd < Vt, the channel is no
longer inverted near the drain and becomes pinched off .Above this drain voltage, the
I ds is controlled only by the gate voltage. This mode is called saturation mode.
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

Fig: 1.1.7 Saturation region.


[Source: R.Jacob Baker, CMOS Circuit Design, Layout and Simulation...]

Non- Ideal I-V Effects:


The Ids value of an ideal I- v model neglects many effects that are important to
modern devices.

Ids

Saturation Region
1 mA Vds= 1.8
Sub-
100 A Region
10 A
1A
100 nA
10 nA
1 nA Sub-
Slope
100 pA
10 pA
Vt

0 0.3 0.6 0.9 1.2 1.5 1.8

Fig: 1.1.8 Non ideal IV Model.


[Source: Neil H.E. Weste, David Money Harris ―CMOS VLSI Design...]
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

Simulated I-V Characteristics


 While compared to the ideal devices, the saturation current increases less than a
quarter with increasing Vgs. This is caused by two effects.
1) Velocity Saturation
2) Mobility degradation.
 At high lateral field strengths Vds . carrier velocity ceases to increase L
linearly with field strength. This is called velocity saturation and this
results in lesser Ids than expected at high Vds.
 Current between source and drain is the total amount of charge in the channel divide
the time required to cross it.
Ids = Q Channel = Q Channel = Q Channal *
Vt (𝐿/𝑣) L
By Sub the values we get
Ids = 𝜇∁𝑜 𝜒 W (Vgs - V t – V ds ) V ds
L
Ids = 𝛽 (Vgs - V t – V ds ) V ds
2

Where 𝛽 = 𝜇 С₀ x W/L

In linear region Vgs > V t and V ds is relatively small.


Saturation Region:-
 In saturation region , if V ds > V dsat , the channel is pinched off. ie; V
ds = Vgs - Vt
 Beyond this point it is often called the drain saturation voltage. Sub
V ds = Vgs - V t in the Ids values for linear region weget.
𝛽 (Vgs - V t ) 2 for V ds > V dsat.
Ids =
2

In saturation, I dsat is
Vgs = V ds+ V DD
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

I dsat = (V DD - V t ) 2

Summarizing the three regions we get.

o ; Vgs <- V t ; cut off


𝛽 ( Vgs - V t – V ds ) V ds ; V ds < V dsat ; linear
2
𝛽 2
(V gs - V t) ; V ds >V dsat ; saturation.
Ids = 2
ROHINI COLLEGE OF ENGINEERING & TECHNOLOGY

 At high vertical field strengths Vgs / tor the carrier scatlers more often.
This is called mobility degradation and this leads to less current than
expected at high Vgs
 The threshold voltage itself is influenced by the voltage difference
between the source and body called the body effect.

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