PHYSICS BOOKLET FOR JEE NEET & BOARDS

ELECTRONIC DEVICES: SOLID AND SEMICONDUCTOR DEVICES

1 SOLID STATE ELECTRONICS (SEMICONDUCTORS)

(A) Energy bands in solids:
(i) In solids, the group of closely lying energy levels is known as energy band.
(ii) In solids the energy bands are analogous to energy levels in an atom.
(iii) In solids the atoms are arranged very close to each other. In these atoms there are discrete energy
levels of electrons. For the formation of crystal these atoms come close together, then due to
nucleus-nucleus, electron-electron and electron-nucleus interactions the discrete energy levels of
atom distort and consequently each energy level spits into a large number of closely lying energy
levels.
(iv) The number of split energy levels is proportional to the number of atoms interacting with each
other. If two atoms interact then each energy level splits into two out of which one will be
somewhat above and another will be somewhat below the main energy level. In solids the number
of atoms is very large ( 1023). Hence each energy level splits into large number of closely lying
energy levels. Being very close to each other these energy levels assume the shape of a band.
(v) In an energy band there are 1023 energy levels with energy difference of 10–23 ev.
(vi) Curve between energy and distance i.e. U-r curve
(a) When two atoms are interacting
Ionisation energy level
Energy distance
O

4p6
Excited energy
4s2
level
3d10
Valence energy
level 3p6

3s2

2p6
Permitted energy
levels 2s2

1s2

Ge
nucleus
 (b) When 1023 atoms are mutually interacting
U
r

Conduction band
Forbidden energy gap

Valance band

(vii) The are three types of energy bands in a solid viz.

(a) Valence energy band
(b) Conduction energy band
(c) Forbidden energy gap.
(viii) Difference between valence, forbidden and conduction energy bands.
Valance Energy Forbidden Energy Conduction Energy Band
Band Band
In this band there are valence No electrons are found in this In this band the electrons are
electrons. band rarely found
This band may be partially or This band is completely empty. This band is either empty or
completely filled with electrons. partially filled with electrons.
In this band the electrons are not In this band the electrons can gain
capable of gaining energy from energy from electric field.
external electric field.
The electrons in this band do not Electrons in this band contribute
contribute to electric current. in this band contribute to electric
current.
In this band there are electrons of In this band there are electrons
outermost orbit of atom which which are obtained on breaking
contribute in band formation. the covalent bands.
This is the band of maximum This is the band of minimum
energy in which the electrons are energy which is empty.
always present.
This band can never be empty. This band can be empty.
(ix) The conduction band is also known as first permitted energy band or first band.
(x) Energy gap or Band gap (Eg):
(a) The minimum energy which is necessary for shifting electrons from valence band to
conduction band is defined as band gap (Eg)
(b) The forbidden energy gap between the valence band and the conduction band is known as
band gap (Eg). i.e. Eg = Ec – Ev
 Conduction
band C. B.
Forbidden
Eg
Energy gap
Valence V. B.
band

(xi) As there are energy levels f electrons in an atom, similarly there are three specific energy bands
for the electrons in the crystal formed by these atoms as shown in the figure

Conduction band

Forbidden band

Valance band

(xii) Completely filled energy bands: The energy band, in which maximum possible number of electrons
are present according to capacity is known as completely filled bank.
(xiii) Partially filled energy bands: The energy band, in which number of electrons present is less than
the capacity of the band, is known as partially filled energy band.
(xiv) Electric conduction is possible only in those solids which have empty energy band or partially
filled energy band.
1.
2 VARIOUS TYPES OF SOLIDS
2.
(i) On the basis of band structure of crystals, solids are divided in three categories.
(a) Insulators
(b) Semi-conductors
(c) Conductors.

(ii) Difference between Conductors, Semi-conductors and Insulators

S.No. Property Conductors Semi-conductors Insulators

1. Electrical Very high Between those of Negligible 10–13
conductivity 10–7 mho/m conductors and mho/m
and its value insulators
i.e. 10–7 mho/m to
10–13 mho/m
2. Resistivity Negligible Less than 10–5 -m Between those of Very high more than
and its value conductors and 105 -m
insulators i.e. 10–5
-m to 105 -m
3. Energy gap Zero or very small More that in con- Very large e.g. in
and its value ductors but less than diamond Eg = 7 eV
that in insu-lators
e.g. in Ge, Eg
=0.72 eV is Si, Eg
=1.1 eV in Ga As
Eg =1.3 eV
4. Current Due to free electrons and very high Due to free Due to free electrons
carriers and electrons and holes but negligible.
current flow more than that in
insulators
5. Number of Very high very low negligible
current
carriers
(electrons or
holes) at
ordinary
temperature
6. Condition of The valence and conduction bands Valence band in Valence band is
valence band are completely filled or conduction somewhat empty completely filled and
and band is some what empty (e.g. in and conduction conduction band is
conduction Na) band is somewhat completely empty.
band at filled
ordinary
temperature
7. Behaviour at Behaves like a superconductor. Behaves like an Behaves like an
0K insulator insulator
8. Temperature Positive Negative Negative
coefficient of
resistance ()
9. Effects of Conductivity decreases Conductivity Conductivity
temperature increases increases
on
conductivity
10. On increasing Decreases Increases Increases
temperature
the number of
current
carriers
11. On mixing Increases Decreases Remains unchanged
impurities
their
resistance
12. Current flow Easily Very slow Does not take place
in these takes
place
13. Examples Cu, Ag, Au, Na, Pt, Hg etc. Ge, Si, Ga, As etc. Wood, plastic, mica,
diamond, glass etc.
(iii) Other properties of semiconductors:
(a) Semi conducting elements are tetravalent i.e. there are four electrons in their outermost
orbit.
(b) Their lattice is face centered cubic (F.C.C.)
(c) The number of electrons or cotters is given by
- Eg / 2kT
ni = pi = AT3 / 2e
i.e. on increasing temperature, the number of current carriers increases.
(d) There are uncharged
(iv) Holes or cotters:
(a) The deficiency of electrons in covalent band formation in the valence band in defined as
hole or cotter.
 (b) These are positively charged. The value of positive charge on them is equal to the electron
charge.
(c) Their effective mass is less than that of electrons.
(d) In an external electric field, holes move in a direction opposite to that of electrons i.e. they
move from positive to negative terminal.
(e) They contribute to current flow.
(f) Holes are produced when covalent bonds in valence band break.

C. B. C. B.

V. B.
e– e– e – e– V. B.

3.
3 TYPES OF SEMICONDUCTORS AND DIFFERENCE BETWEEN THEM
4.
(i) The semiconductors are of two types.
(a) Intrinsic or pure semiconductors
(b) Extrinsic or dopes semiconductors
(ii) Difference between intrinsic and extrinsic semiconductors:
S.No. Intrinsic semiconductors Extrinsic semiconductors
1. Pure Ge or Si is known as intrinsic The semiconductor, resulting from mixing
semiconductor impurity in it, is known as extrinsic
semiconductors.
2. Their conductivity is low (because only one Their conductivity is high
9
electron in 10 contribute)
3. The number of free electrons (ni in conduction In these ni ¹ pi
band is equal to the number of holes pi in valence
band.)
4. These are not practically used These are practically used
5. In these the energy gap is very small In these the energy gap is more than that in
pure semiconductors.
6. In these the Fermi energy level lies in the middle In these the Fermi level shifts towards valence
of valence band and conduction or conduction energy bands.
(iii) Properties of intrinsic semiconductors:
(a) At absolute zero temperature (0 K) there are no free electrons in them.
(b) At room temperature, the electron-hole pair in sufficient number are produced.
(c) Electric conduction takes place via both electrons and holes.
(d) The drift velocities of electrons and holes are different.
(e) The drift velocity of electrons (Vdn) is greater than that of holes (Vdp).
(f) The total current is I = In + Ip
(g) In connecting wires the current flows only via electrons.
(h) The current density is given by
J= nq Vdn + pq Vdp
J = nqmn E + pqmp E = s E
 Where Vdn = drift velocity of electrons
n = mobility of electrons
Vdp = drift velocity of holes
p = mobility of holes
(i) The electric conductivity is given by s = nq(mn + mp )
(j) Mobility of electron mn = Vdn / E
(k) Mobility of holes mp = Vdp / E
(l) At room temperature s Ge > s Si because nGe > nSi
where nGe = 2.5 ´ 1013 / cm3 and nSi = 1.4 ´ 1010 / cm3
(iv) Extrinsic semiconductors:
(a) Doping: The process of mixing impurities of other elements in pure semiconductors is
known as doping.
(b) Extrinsic semiconductors: the semiconductors, in which trivalent and pentavalent
elements are mixed as impurities, are known as extrinsic semiconductors.
(c) The extrinsic semiconductors are of two types
(i) N-type semiconductors (ii) P-type semiconductors.
(d) Difference between N-type and P-type semiconductors
S.No. N-type semiconductors P-type semiconductors
1. In these the impurity of some pentavalent In these, the impurity of some trivalent
element like P, As, Sb, Bi, etc. is mixed element like b, Al, In, Ga etc. is mixed
2. Si Si

Penta valent Trivalent

e– e– impurity atom Impurity atom
e– e–
Si Bi Si Si B Si
–
e– e
–
e– e
Free electron

Si Si

3. In these the impurity atom donates one In these, the impurity atom can accept one
electrons, hence these are known as donor electron, hence these are known as
type semiconductors acceptor type semiconductors.
4. In these the electrons are majority current In these the holes are majority current
carriers and holes are minority current carriers and electrons are minority current
carriers. (i.e. the electron density is more carriers i.e. np >> nn
than hole density nn >> np)
5. In these there is majority of negative In these there is majority of positive
particles (electrons) and hence are known particles (cotters) and hence are known as
as N-type semiconductors P-type semiconductors.
 Electrons Electrons

C. B. C. B.

V. B.
V. B.
Holes

6. In these the donor energy level is close to In these the acceptor energy level is close
the conduction band and far away from to the valence band and far away from
valence band. conduction band.

C. B. C. B.
Ec Ec
Energy

Energy
Ed

Ed
Ev Ev
V. B. V. B.

7. Current density Jn = nq Vdn Jp = pq Vdp

8. Electric conductivity p = nqp
n = nqn  np qp
 nd qn Where np = number of acceptor atoms /
Where nd = number of donor atoms / cm3. cm3.
9. The Fermi energy level lies close to The Fermi energy level lies close to the
conduction band (i.e. the Fermi energy valence band (i.e. the Fermi energy level
level lies in between the donor energy level lies in between the acceptor energy level
and conduction band) and valence band)

Ec Ea
Ef Ef
Ed Ev

(v) Conductivity formulae:

s n nmn
(a) =
s p pmp
s n mn
(b) = if n = p
s p mp
s n nd mn
(c) =
s p na mp
s ext nd
(d) =
s int ni
 (vi) Resistivity formulae:
1
(a) ri =
qni (mn + mp )
1
(b) rn =
mn qn
1
(c) rp =
mp qp
r n mpP
(d) =
r p mn n
r n mp
(e) =
r p mn
r1 s1
(f) =
r2 s2

(vii) Characterizes Si and Ge at 300 K

Characteristics Ge Si
Energy gap 0.7 (eV) 1.1 (eV)
Electron mobility (n) 0.39 (M2V–1S–1) 0.135 (M2V–1S–1)
Cotter mobility (p) 0.19 (M2V–1S–1) 0.048 (M2V–1S–1)
Intrinsic current concentration ni = 2.4  1019 cm–3 ni = 1.5  1016 cm–3
Resistivity 0.46 -m 2300 -m
Potential barrier 0.3 V 0.7 V

5.
4 SEMICONDUCTOR DIODE OR P-N JUNCTION, CONDUCTION IN P-N
JUNCTION, DEPLETION LAYER AND BARRIER ENERGY

P-N Junction
(a) The device formed by joining P n
atomically a wafer of P-type
semiconductor to the wafer of N- – – –
– – – – – – + + + + +
type semiconductor is known as
– – – – – – – –
P-N junction. – + + + + +
– – –
– – – – – – + + + + +
– – –
– – – – – – + + + + +
X1 X2
Junction
(a)
(b) There are three processes of making junctions
(i) Diffusion (ii) Alloying (iii) Growth
In majority of cases P-N junction is formed by diffusion process. The impurity concentration is
maximum at surface and decreases gradually inside the semiconductor.
(c) Conduction of current in P-N Junction:
Junction

+
– – – +

N Free
P + +
– – + Electrons
–
– – + + +

Negative or acceptor Positive or donor

impurity ions impurity ions

Acceptor ions Donor ions

– +

P – + N

– +

Depletion layer

– +
EB

– +

P – + N

– +

(i) In P-N junction the majority cotters in P-region and majority electrons in N-region start
diffusing due to concentration gradient and thermal disturbance towards N-region and P-
region respectively and combine respectively with electrons and cotters and become
neutral.
(ii) In this process of neutralization there occurs deficiency of free current carriers near the
junction and layers of positive ions in N-region and negative ions in P-region are formed.
These ions are immobile. Due to this an imaginary battery or internal electric field is
formed at the junction which is directed from N to P.
(iii) Depletion layer:
(a) The region on both sides of P-N junction in which there is deficiency of free current
carriers, is known as the depletion layer.
(b) Its thickness is of the order of 1m (= 10–6)
(c) On two sides of it, there are ions of opposite nature. i.e. donor ion (+ve) on N-side and
acceptor ions (–ve) on P-side.
– +
+ + – + – – –
+ – +
P N –
+ + + – + –
– –
+ + – –
+ + + – + – –
+ – + –
(d) This stops the free current carriers to crossover the junction and consequently a potential
barrier is formed at the junction.
(e) The potential difference between the ends of this layer is defined as the contact potential or
potential barrier (VB).
(f) The value of VB is from 0.1 to 0.7 volt which depends on the temperature of the junction.
It also depends on the nature of semiconductor and the doping concentration. For
germanium and silicon its values are 0.3 V and 0.7 V respectively.
(g) P-N Junction diode or semiconductor diode:
(i) Symbolic representation of diode:

P N
(ii) The direction of current flow is represented by the arrow head.
(iii) In equilibrium state current does not flow in the junction diode.
(iv) In can be presumed to be equivalent to a condenser in which the depletion layer acts as a
dielectric.
– +
– +
– +
– +
– Depletion +
– region +
– +
(v) Potential distance curve at P-N Junction
Potential
N

Distance

Junction
plane
(vi) Charge density curve at P-N Junction
Charge density
N

P +

Distance
–

Junction plane
 (vii) Curve between electric field and distance near P-N junction
Electric field
intensity

Distance

Junction plane
Voltage across A

INPUT ac

t
Voltage across RL

OUTPUT VOLTAGE

6.
5 BIASING OF JUNCTION DIODE
7.
(i) No current flows in the junction diode without an external battery. It is connected to a battery in
two different ways. Hence two different bias are possible in junction diode.
(a) Forward bias (b) Reverse bias
(ii) Difference between forward bias and reverse bias:
S.No. Forward bias Reverse bias
1. The P-region of junction diode is connected to The P-region is connected to negative terminal
positive terminal of battery and N-region is and N-region is connected to positive terminal
connected to negative terminal of battery. of the battery.

P N P N

+ – (a) – + (a)

A A
R R
V
+ – – +

2. In this the width of depletion layer decreases In this the width of depletion layer increases
 – + – +

– + – +
P – + N P – + N
– + – +

(a) (a)

– + – +
– + – +
– + – +

+ – – +
(b) (b)
3. Current flows in it due to majority electrons and Current flows in it due to minority electrons
majority holes and hence high current (mA) and minority holes and hence negligible
flows in it. current (in A) flows in it.
– + – +
– + N – + N
P
– + – +

+ – – +

The direction of current in it is from P to N. Direction of current is from N to P

4. The junction resistance is low The junction resistance is high
5. Curve between forward voltage and forward Curve between reverse voltage and reverse
current current
Vr
If

Ir
Vf
Voltmeter(V) Voltmeter(V)

pn pn
Milliammeter Microammeter
(mA) (A)

Rheostat Rheostat
(potentiometer) Switch (potentiometer) Switch

+ – – +
 Illustration 1: When the reverse potential in a semiconductor diode are 10V and 20V, then the
corresponding reverse currents are 25 A and 50A respectively. The reverse resistance of
junction diode will be:
(A) 40  (B) 4  105 
(C) 40K  (D) 4  10–5 
Vr2  Vr1 20  10
Sol. (B) rr = = = 4  105 
r2  r1  50  25   10 6

Illustration 2: The depletion layer in a silicon diode is 1m wide and its knee potential is 0.6V, then the
electric field in the depletion layer will be:
(A) 0.6 V/m (B) 6  104 V/m
(C) 6  105 V/m (D) Zero
dV 0.6
Sol: (C) E =   6  6  105 V / m
dr 10
Illustration 3: A semiconductor P-N junction is to be forward biased with a battery of e.m.f. 1.5 Volt. If a
potential difference of 0.5V appears on the junction which does not depend on current and
on passing 10mA current through the junction there occurs huge Joule loss, then to use the
junction at 5mA current, the resistance required to be connected in its series will be:
1.5V
+ –

R
(A) 3 K (B) 300 
(C) 300 K  (D) 200 
Sol: (D) VR = (1.5  0.5) = 1V = IR
1
R=  200
5  10 3
8.
6 CHARACTERISTICS OF JUNCTION DIODE
9.
(i) The characteristic curves of junction diode are of two types
(a) Static characteristic curves
(b) Dynamic characteristic curves
(ii) The static and the dynamic characteristics are also of two types
(A) (a) Static forward characteristics curves
(b) Static reverse characteristic curves
(B) (a) Dynamic forward characteristic curves
(b) Dynamic reverse characteristic curves
(iii) Static forward characteristics
(a) In the absence of load resistance, the curves drawn between the forward voltage (Vf) and forward
current (f) are known as the static forward characteristics of junction diode.
(b)

If
(in mA)

Vf

(c) On increasing the Vf the value of f increases exponentially

 (d) Circuit diagram:
mA
If

+
+
N Vf –

(iv) Static reverse characteristics:

(a) In the absence of load resistance, the curves drawn between the reverse voltage (Vr) and reverse
current (r) are known as the static reverse characteristics of junctions diode.
(b)
Zemer voltage
Vr Vz
A

s 0

Break
B
down
point

C Ir
(in mA)

(c)
mA

Ir
–
P

– +
N Vr

+
(d) After the breakdown point at B, the reverse current (r) does not depend on the reverse voltage (Vr)
in the BC portion of curve.
10.
7 CONSTANTS OF JUNCTION DIODE
11.
(A) (i) Static forward and reverse resistances
(ii) Dynamic forward and reverse resistances
(B) Static forward resistance (Rf):
(i) The ratio of the forward voltage (Vf) and forward current (f) at any point on the static forward
characteristic is defined as static forward resistance of junction diode.
Vf
i.e. Rf =
If
 If

Vf

(ii) Its value is of the order of 102 .

(C) Static reverse resistance (Rr):
(i) The ratio of reverse voltage (Vr) and reverse current (r) at any point on static reverse characteristic
is defined as the static reverse resistance of junction diode.
Vr
i.e. Rr =
Ir
(ii) Its value of is of the order of 106
(iii)
Vr
A

C Ir

(D) Dynamic forward resistance (Vr):

(i) The ratio of small change in forward voltage to the corresponding small change in forwards current
on static forward characteristic is defined as the dynamic forward resistance of junction diode (rf)
DVf Vf2 - Vf1
(ii) rf = =
DI f I f2 - I f1
(E) Dynamic reverse resistance (rr):
(i) The ratio of the small change in reverse voltage to the corresponding small change in reverse
current on the static reverse characteristics is defined as the dynamic reverse resistance of junction
diode.
DVr Vr2 - Vr1
(ii) rr = =
DIr Ir2 - Ir1
(iii)
Vr DVr
A

DI r

C Ir
 Illustration 4: The value of current in the adjoining diagram will be:
(A) 0 amp (B) 102 amp
(C) 2
10 amp (D) 103 amp
+4V PN +1V
300 
4 1
Sol. (B) If = = 102A
300
Illustration 5: The value of current in the following diagram will be:
(A) 0.10A (B) 102 A
(C) 1A (D) 0A
– 4V PN –1V
300 
Sol. (D) In reverse bies Ir = 0

Illustration 6: The saturation current of a P-N junction germanium at 27oC is 105 amp. The potential
required to be applied in order to obtain a current of 250mA in forward bias will be:
(A) 0.57 V (B) 0.48 V
(C) 0.26 V (D) 0.63 V
Sol. (C) If = IS eqV / KT  1

250  103
qV
If
or e kt   1=  1  25001
Is 105
qV
or  10.126
KT
10.126  1.38  1023  300
V= = 0.26 V
1.6  1019

Illustration 7:The junction diode in the following circuit requires a minimum current of 1mA to be above
the knee point (0.7V) of its I-V characteristic curve. The voltage across the diode is
independent of current above the knee point, If VB = 5V, then the maximum value of R so
that the voltage is above the knee point will be:
(A) 4.3k  (B) 860k 
(C) 4.3  (D) 860 
Sol% (B) VB = Vknee + IR
or 5 = 0.7 + 10–3 R or R = 4.3K 
12.
8 ZENER BREAKDOWN, AVALANCHE BREAKDOWN AND ZENER DIODE
S.No. Avalanche breakdown Zener breakdown
1. The doping in the formation of P-N The doping in the formation of P-N junction is high
Junction is low
2. The covalent bonds break as a result of In this the covalent bonds break spontaneously.
collision of electrons and holes with the
valence electrons
3. Higher reverse potential is required for Low reverse potential is required for breakdown
breakdown.
4. In this the thermally generated electrons In this the covalent bonds near the junction break due
due to electric field ionize other atoms and to high reverse potential ~20 V and consequently
release electrons. electrons become free.
 (ii) Zener diode:
(a) The junction diode made of Si or Ge, whose reverse resistance is very high, is known as Zener
diode.
(b) It works at Zener voltage (Vz) i.e. the voltage at which breakdown starts.
Zener voltage (Vz): The voltage at which breakdown starts in Zener diode and consequently the
reverse current in the circuit abruptly increases, is defined as Zener voltage.
(c) It is used in power supplies as a voltage regulator.
(d) Symbolic representation of Zener diode.

N
P

9 SALIENT FEATURES RELATING TO JUNCTION DIODE

13.
(i) In junction diode the current flow is unidirectional as in vacuum diode.
(ii) Current flows in the semiconductor diode when it is forward biased.
(iii) Its P-part behaves like a plate and N-apart behaves like a cathode.
(iv) Relation between forward current and saturation current
lV
I f = I s (e kT
- 1)
Where f and s are forward and saturation currents respectively, K = Boltzmann constant, T =
absolute temperature V = potential difference
V / kT
(a) In forward bias eq >> 1 then I f = IsqV /KT
V / kT
(b) In reverse bias eq << 1 then I f = I s
(v) The velocity gained by the charge carriers in an electric field of unit intensity, is defined as their
mobility
Vd Drift Velocity
m= =
E Intensity of electricity field
(vi) Forward and reverse characteristic curves of Si and Ge diodes:
Ge
+ I f (mA) Si

– +
Vr Vf

Si
– I f (mA)
Ge
 I (mA) B
3

Forward
Breakdown 2
conduction
voltage
1 Knee point
Reverse
bias (Vr)
–3 –2 –1 0 1 2 Forward
bias (Vf)
–1
Reverse
break down
–2

–3
I (mA)
Knee Point: That point on the forward characteristics of junction diode after which the curve
becomes linear, is known as the knee point. In the diagram it is represented by the point A.
Knee voltage: The potential at knee point A is known as the knee potential or forward potential at
which the forward current abruptly increases is known as the knee potential.
(a) This potential does not depend on the current.
(b) For Si its value is 0.7 V.
(vii) Greater the value of Eg, stronger will be the binding of valence electrons to the nucleus.
10 USES OF JUNCTION DIODE
(i) Rectifier
(ii) Off switch
(iii) Condenser

11 DIFFERENT BETWEEN VACUUM TUBE DEVICES AND SEMICONDUCTOR

DEVICES
S.No. Vacuum tube devices semiconductor devices
1. These are voltage controlled devices. These are current driven devices
2. These work at high voltage These work at low voltage.
3. For these a filament battery is required. For these no filament batteries required
4. These are not temperature sensitive These are temperature sensitive devices
devices
5. Their life is less and are more expensive Their life is longer and are cheap
6. Their size is big Their size is small.
7. Their efficiency is more Their efficiency is less
8. Power consumption is maximum Power consumption is minimum
9. These can not be used integrated circuit These can be used as integrated circuits
(C's)
10. Electric conduction is only via electrons. Electric conduction takes place both by electrons and
cotters.
12 VARIOUS TYPE OF P-N JUNCTION
S.No. P-N Device Biasing Principle Uses Explanation
1. Light Forward Production Burglar In Ga, As, Electromagnetic radiations are
Emitting of light alarms, emitted on account of transitions of
Diode from calculators, electron from conduction band to valance
(LED) electric pilot lamps, band.
current telephone,
digital watch
and in switch
boards

P N

2. Photodiode Reverse Electric In sound The covalent bonds in semiconductors

conduction films, break due to electromagnetic radiations
from light computers, and more electrons become free and
tape, in conductivity increases.
reading
computer
cards and in
light driven
switches.
P N

3. Zener Reverse Current is In voltage Voltage across it remains constant

diode controlled regulation

N
P

4. Solar cell No Production For Due to nuclear fusion process sun is

biasing of potential generating constantly emitting light and heat energy.
difference electrical The upper surface of P-N junction is thin
by sun light energy in in this diode.
cooking food
etc.
S

Other salient features

(a) The value of electric field across the P-N junction is 105 V/m
VB 0.5
(b) E= = - 6 = 5 ´ 105
d 10
 (c) The values of contact potential for Si and Ge are 0.7 V and 0.3 V respectively.
14.
13 SEMICONDUCTOR DIODE AS RECTIFIER
15.
(i) Rectification: The process in which an alternating current is converted into direct current, is
defined as rectification.
(ii) Rectifier: The device employing diode, used to convert an alternating current into direct current, is
known as rectifier.
(iii) The rectifiers are of two types:
(a) Half wave rectifier (b) Full wave rectifier
Half wave rectifier: The rectifier, in which only alternate half cycles of applied alternating signal
are converted into direct current, is known as half wave rectifier.
Full wave rectifier: The rectifier is which the whole cycle of applied alternating signal is
converted into direct current, is known as full wave rectifier.
(iv) Difference between half wave rectifier and full wave rectifier

No Half-Wave Rectifier Full Wave Rectifier centre Full wave Bridge Rectifier
. taped
1. D1 A P1 N1 A

D1 P D1 D2
P N P S AC E0
– RL + mains
Ein 220 V
Ein RL E0 RL
50 Hz D4 D3
E0
P2 N2
B
D2

2. In this, one diode or one In this, two diodes or one In this four junction diodes
semiconductor diode is used double diode or two junction from the bridge circuit.
diodes are used.
3. Ordinary transformer is used Centre tap transformer is used Transformer is not required.
4. It converts half cycle of applied It converts the whole cycle of It converts the whole cycle of
A.C. signal into D.C. signal applied A.C. signal into D.C. applied A.C. signal into D.C.
signal signal
5. Input and output curves Input and output curves Input and output curves

Ein Ein Ein

+ + + + + +
– – wt or t – – wt – – wt

E0 E0 E0

+ + D1 D2 D3 D4
wt wt wt

6. I0 I0 I0
The value of Irms = Irms = Irms =
2 2 2
7. I0 2I0 2I0
I dc = I dc = I dc =
p p p
8. The value of ripple factor is The value of r in it is 48.2% The value of r in it is 48.2%
 2
æI ö
r = ç rms ÷ - 1 = 121 %
èI ø dc

9. Efficiency () 81.2 Its efficiency is 81.2%

(a) h =
40.6 æ rp ö
(a) h = çè1 + R ÷
æ rp ö L ø
çè1 + R ÷
L ø (b) When rp = RL then  =
(b) When rp = RL then  = 40.6%
20.3% rp
(c) When << 1 then  =
(c) When rp << RL then  = RL
40.6% 81.2%
10. Peak inverse voltage PV = E0 PV = 2E0 PV = 2E0
11. Form factor F = 1.11 F = 1.11
Irms Erms p
F= = = = 1.57
Idc Edc 2
12. The ripple frequency is equal to The ripple frequency is twice The ripple frequency is twice
the frequency of applied e.m.f. that of the applied e.m.f. that of the applied e.m.f.
13. Curve between the output Curve Curve
voltage from filter circuit and
time

V0
Vdc E E

Vm

t t t

14. The value of D.C. component in The value of D.C. component The value of D.,C. component
output voltage is less than the in output voltage is more than in output voltage is more than
A.C. that of A.C. that of A.C.
15. The value of peak inverse The value of PV is E0 The value of PV is E0
voltage (PV) is E0
16. The value of peak load current E0 The value of PLC is
The value of PLC is
E0 rp + RL 2E0
is
rp + RL 2rp + 2RL
 (v) Similarities between half wave and full wave rectifiers
(a) The alternating input signal to be rectified is connected to the primary of transformer.
(b) The output voltage is obtained across the ends of load resistance.
(c) The output voltage is unidirectional but it is not constant rather pulsating.
(d) The output voltage is the mixture of alternating and direct voltages.
(e) In output, the direct components are more than the alternating components.
(f) Diode conducts only when the plate is positive with respect to the cathode. semiconductor diode
conducts only when it is forward biased.
(g) When the plate of diode is negative with respect to the cathode than it does not conduct.
(vi) Definitions:
(a) Efficiency of rectifier
output D.C. power
(i) h=
input A.C. power
Pdc
(ii) h= ´ 100%
Pac
(b) Ripple Factor (r):
2
I E æI ö
(i) r = ac = ac = ç rms ÷ - 1
I dc Edc è I dc ø
r.m.s. of value of fluctuating voltage or current
(ii) r=
average D.C. value of voltage or current
(c) Form factor
Irms
(i) F=
I dc
Erms
(ii) F=
Edc
p
(iii) F= = 1.11 For full wave rectifier
2 2
p
(iv) F = = 1.57 For half wave rectifier
2
14 TRANSISTOR
16.
(i) That current driven device, which is formed by three doped semiconductor regions, is known as
transistor.
(ii) That current driven device, in which the emitter current controls the collector current, is known as
transistor.
(iii) There are three semiconductor regions in a transistor viz Emitter (E), Base (B) and collector (C).
(iv) Function of emitter: To send electrons or cotters into the base
Function of base: To send electrons or cotters received from the emitter into the collector region.
Function of collector: To collect electrons or cotters from the base region.
(v) The distance between E and B in a transistor is less than that between B and C and the collector is
marked with a dot (.)
 E B C

(vi) Transistors are of two types:

(i) PNP transistor
(ii) NPN transistor
Emitter Base Collector Emitter Base Collector

E C E C

B B

(ii) p-n-p transistor

(i) n-p-n transistor

PNP-transistor:
(i) Symbolic representation:
P P
E
P N P
B
N C
(ii) In this conventional current flows from emitter (E) to base (B) hence the arrow head on emitter is
from E to B.
(iii) Sketch diagram
P N P

IC
E B C
IE

IB

VEB VCB
(iv) Working of PNP transistor
(a) The emitter-base junction is forward biased while base-collector junction is reverse biased.
(b) A large number of holes enter from emitter to base and at the same time a very small
number of electrons enter from the base to the emitter.
(c) The electrons in the emitter region recombine with an equal number holes and neutralise
them.
(d) The loss of total number of holes in the emitter is compensated by the flow of an equal
number of electrons from the emitter to the positive terminal of battery.
(e) These electrons are released by breaking of covalent bonds among the crystal atoms in the
emitter and an equal number holes is again created.
(f) Thus in PNP transistor emitter current is mainly due to the flow of holes, but in eternal
circuit it is due to flow of electron from emitter to the positive terminal of the battery.
(g) The base is very thin and is lightly doped. Therefore only a few holes (~ 1%) combine
with electrons in base. Hence the base current B is very small.
(h) Nearly 99% of the holes coming from the emitter are collected by the collector.
(i) For each hole reaching the collector, an electron is released from the negative terminal of
collector base battery to neutralise the hole.
(j) The relation between three currents is as under
IE = IB + IC , IE >> IB , IC < IE and IB << I C
(k) The input impedance is low and output impedance is high. The output voltage required to
be applied is more than the input voltage.
(l) The functions of E, B and C are to send cotters into base region, to send these cotters into
collector region and to collect the cotters received from base region respectively.
NPN-transistor:
(i) Symbolic representation
N N

N P N C
P
E B
(ii) In this conventional current flows from base towards emitter, hence the arrow head on emitter is
directed from B to E.
(iii) Sketch diagram

n-emitter p-Base region n-collector

n n

IE IC
Electrons
IB

VEB VCB
n-p-n transistor
 (iv) Working of NPN transistor
(a) The emitter-base junction is forward biased whereas the collector-base junction is reverse biased.
(b) The majority electrons in the emitter are pushed into the base.
(c) The base is thin and is lightly doped. Therefore a very small fraction (say 1%) of incoming
electrons combine with the holes. Hence base current is very small.
(d) The majority of electrons are rushing towards the collector under the electrostatic influence of C-B
battery.
(e) The electrons collected by the collector move towards the positive terminal of C-B battery.
(f) The deficiency of these electron is compensated by the electrons released from the negative
terminal of E-B battery.
(g) Thus in NPN transistors current is carried by electron both in the external circuit as well as inside
the transistor.
(h) The relation between these current is given by
IE = I C + I B
IE >> IB , IC < IE and IB << IC
(i) The input impedance is low and output impedance is high. The output voltage required to be
applied is more than the input voltage.

Illustration 8: For a common emitter connection the values of constant collector and base current are
5mA and 50 A respectively. The current gain will be:
(A) 10 (B) 20 (C) 40 (D) 100
 IC  5  103
Sol. (D)  =   = 6
 100
 IB  V 50  10
e

17.
15 CHARACTERISTICS OF TRANSISTOR
18.
The study of variation in current with respect to voltage in a transistor is called its characteristic. For each
configuration of transistor, there are two types of characteristics:
(i) Input characteristics (ii) Output characteristics
(A) Common base configuration
(i) Circuit diagram

mA mA

–
+

–
+

Veh Veh

Input Output
Common base PNP transistor
 p-emitter n-Base region p-collector

IE p p

IC
Holes
IB

VEB VCB
p-n-p transistor
(ii) Input characteristics
(a) Input characteristics are obtained by plotting the emitter current E versus emitter-base
voltage VEB at constant collector base potential VCB.
IE
(mA)

0V
–2

–0 V
= 10
=

–
cb

=
V

cb
V
cb
V

0 0.2 0.4 0.6 0.8 Vcb (Volts)

(b) E is almost independent of VCB.

(c) Due to very low input impedance, E increases rapidly with small increase in VEB.
(d) E is finite at finite value of VCB even when VEB is zero. To reduce E to zero, the emitter
must be reverse biased.
(iii) Output characteristics:
(a) The output characteristics are obtained by plotting the collector current (C) versus
collector-base voltage (VCB) at constant emitter current (E).
IC
(mA)

I E = 6 mA
I E = 4 mA
I E = 2 mA
IE = 0

0 10 20 30 40 50
Vcb (Volts)

(b) C varies with VCB only at very low voltage (< 1 V). Transistor is not operated in this
region.
 (c) As VCB increases beyond 1 volt, C becomes independent of VCB but depends only upon the
emitter current E.
(d) Due to high output impedance, a very large change in VCB produces a very small change in
C.
(e) For the region to the left of VCB = 0 and for E > 0, both emitter and collector are forward
biased and it is called saturation region.
(f) For E < 0, both emitter and collector are reverse biased and the region is called the cut-off
region.
(g) For central region VCB > 0, the curves are parallel and it is called active region. In this
region emitter is forward biased and collector is reverse biased.
(B) Common emitter configuration: In this configuration emitter is common to input and output
circuits.
(i) Circuit diagram
mA

mA

–
–
+

+
Vbe Vce

Input Output
Common base PNP transistor
(ii) Input characteristics
(a) Input characteristics are obtained by plotting the base current (B) versus base emitter
voltage (VBE) for constant collector-emitter voltage (VCE).
IB
V

(mA)
=0

10
=–
e
Vc

e
Vc

0
Vbe (Volts)

(b) B increases with increase in VBE, but less rapidly as compared to common base
configuration, indicating that input resistance of common emitter configuration is greater
than that of common base configuration.
(c) These characteristics resemble with those of a forward biased junction diode indicating
that the base-emitter section of a transistor is essentially a junction diode.
(iii) Output characteristics:
(a) The output characteristics are obtained by plotting collector current C versus collector-
emitter voltage (VCE) at constant value of base current (B).
 Saturation region
IC
(mA)

Active region I b = 40 mA
I b = 30 mA
I b = 20 mA
I b = 10 mA
Ib = 0
Cut off region
1.0 2.0 3.0 4.0 5.0 6.0 Vce (Volts)

(b) C increases with increase of VCE upto 1 volt and beyond 1 volt it becomes almost constant.
(c) The value of VCE upto which C increases is called the knee voltage. The transistor always
operates above knee voltage.
(d) Above knee voltage, C is almost constant.
(e) The region for VCE < 1 volt is called saturation region as both emitter and collector are
forward biased.
(f) In the region B  0, both emitter and collector are reverse biased and it is called the cut-ff
region.
(g) The central region, where the curves are uniformly spaced and sloped, is called the active
region. In this region the emitter is forward biased and the collector is reverse biased.
(C) Common collector configuration: In this configuration collector is common to input and output
circuits.
(i) Circuit diagram
mA

mA
+

–
–

Vbe Vce

Input Output
Common base PNP transistor
(ii) Input characteristics:
(a) The input characteristics are obtained by plotting the base current B versus base-collector
voltage (VBC) for constant emitter-collector voltage (VBC).
 IB
Vce = 2V Vec = 4V
(mA)

VBC (volts)

(b) B decreases with increase of VBC. These characteristics are quite different from those of
common base and common emitter configurations.
(c) VBE = VEC - VBC
As VBC increases, VBE decreases for constant value of VEC, thereby reducing B.
(iii) Output characteristics:
(a) Output characteristics are obtained by plotting emitter current E versus collector-emitter
voltage (VCE) for constant base current (B).
IE
(mA)

I B = 80 mA
I B = 60 mA
I B = 40 mA
I B = 20 mA
IB = 0

Vce (Volts)
(b) The curves are similar to those obtained in output characteristics in common emitter
configuration indicating that
IE » I C ( B is very small)
(c) In this configuration the output can be obtained in either direction and hence it is used for
matching the impedance for two way amplifier and switching circuits.
Illustration 9:In a transistor amplifier,  = 62, RL = 5000  and internal resistance of the transistor is 500
. The voltage amplification of the amplifier will be:
(A) 500 (B) 620
(C) 780 (D) 950
RL 62  5000
Sol. (B) Voltage amplification = 
Re 500
Illustration 10:In the above problem, the power amplification will be:
(A) 25580 (B) 33760
(C) 38440 (D) None of these
2RL 622  5000
Sol. (C) Power amplification =   38440
Re 500
 19.
16 TRANSISTOR AS AN AMPLIFIER
20.
(i) Amplification: The phenomenon, in which the amplitude of input signal (Voltage, current or
power) is increased, is defined as amplification.
(ii) Amplifier: The device (electronic circuits), used to increase the amplitude of input signal is known
as amplifier.
(A) Common base amplifier:
(i) NPN Transistor: (a) Circuit diagram
NPN
IE E C IC

RL
Input IB VC Output
signal signal
VCB
VEB

(b) When no A.C. signal is applied, then only collector current C flowing through the load resistance
RL will produce a voltage drop CRL across the load resistance.
 net collector voltage VC = VCB – CRL . . . (1)
(c) Now input A.C. signal, to be amplified, is applied to the input circuit. During positive half of the
input signal, the forward bias is reduced. This reduced emitter current (E) and consequently C is
also reduced. According to Eq. (1) VC increases.
(d) During negative half cycle of the input signal, the forward bias is increased So, E and hence C
increases. According to Eq. (1), VC decreases.
(e) The input and the output signals are in same phase.
(f) Current amplification factor ():
(i) DC current gain (DC): The ratio of the collector current to the emitter current at constant
collector voltage is defined as D.C. current gain
æI ö
a DC = ç C ÷
è IE øV
C

DC is always less than one.

(ii) AC current gain (AC): The ratio of change in collector current to the change in emitter
current at constant collector voltage is defined as AC current gain.
æDI ö
a AC = ç C ÷
è DIE øV
C

(g) Voltage gain: (i) The ratio of the output voltage across the load resistance to the input signal
voltage is defined as voltage gain.
V0 ICRL R
Voltage gain = = =a ´ L
Vi IER0 Ri
(Ri is the resistance of the input circuit)
(ii) Since  is approximately equal to one and RL >> Ri, hence very high voltage gain can be
obtained.
(h) Power gain: (i) The ratio of the output power to the input power is defined as power gain.
output power output current ´ output voltage
Power gain = =
input power input current ´ input voltage
 RL R
= Current gain  voltage gain = a ´ a ´ =a2 L
Ri Ri
(ii) Since RL > > Ri, hence power gain is quite large.

17 TRANSISTOR AS AN OSCILLATOR
21.
(i) The simplest electrical oscillating system consists of an inductance L and a capacitor C connected
in parallel.

L C

(ii) Once an electrical energy is given to the circuit, this energy oscillates between capacitance (in the
form of electrical energy) and inductance (in the form of magnetic energy) with a frequency
1
v=
2p / LC

(iii) The amplitude of oscillations is damped due the presence of inherent resistance in the circuit

A
t

(iv) In order to obtain oscillations of constant amplitude, an arrangement of regenerative or positive

feedback from an output circuit to the input circuit is made so that the circuit losses may be
compensated.
(v) Circuit diagram of NPN transistor in common emitter configuration as an oscillator.

L’

C
B
NPN

E +
B2
Output L’’
L
C –

B1 K
+ –
 Input
Transistor
Output
amplifier

Feedback
network

(a)

1
2 Mutual inductance
T1
(coupling through magnetic field)
3

n-p-n C T2
L
4 output

S1

(vi) The tank circuit is used in emitter-base circuit of the transistor. The E-B circuit is forward biased
whereas the C-B circuit is reverse biased.
(vii) The coil L' in the emitter-collector circuit is inductively coupled with coil L.
(viii) When the key K is closed, C begins to increase. The magnetic flux linked with coil L' and hence
with L also begins to increase. This supports the forward bias of B-E circuit. As a result of this E
increases. Consequently C also continues increase till saturation.
(ix) When C attains saturation value, mutual inductance has no role to play.
(x) When the capacitor begins to discharge through inductance L, the E and hence C begins to
decrease. consequently, the magnetic flux linked with L' and hence with L decreases. The forward
bias of E-B circuit is opposed thereby further reducing E and C. This process continues till C
becomes zero.
(xi) At this stage too, the mutual inductance has once again no role to play.
 ASSIGNMENT-1

1. Zener breakdown will occur if :

(A) Impurity level is low (B) Impurity level is high
(C) Impurity is less in n-side (D) Impurity is less in p-side
Solution : (D)

2. The correct symbol for zener diode is :

(A)
+ -
(B)
+ -

(C)
+ -
(D)
Solution : (A)

3. The reason of current flow in PN junction in forward bias is :

(A) Drifting of charge carriers (B) Minority charge carries
(C) Diffusion of charge carries (D) all of the above
Solution : (C)

4. In a half wave rectifier circuit, the input signal frequency is 50 Hz, the output frequency will be :
(A) 25 Hz (B) 50 Hz
(C) 200 Hz (D) 100 Hz
Solution : (D)

5. The reverse bias in a junction diode is changed from 5V to 15V then the value of current changes
from 38A to 88 A. The resistance of junction diode will be:
(A) 4  105  (B) 3  105  (C) 2  105  (D) 106 
Vr2  Vr1 15  5
Sol.(C) rr = = = 2  105 
Ir2  Ir1  88  38   10 6

6. The inverse saturation current in a P-N junction diode at 27oC is 105 ampere. The value of forward
current at 0.2 volt will be:
(A) 2037.6  103A (B) 203.76  103A
(C) 20.376  103A (D) 2.0376  103A
 qV

Sol.(C) If = Is e kt  1
 

5  1.6  10 19  0.2  
= 10  exp.  23   1
  1.4  10  300  
= 10–5 × [2038.6  1] = 20.376  103A
7. The potential barrier in the depletion layer is due to
(A) Ions (B) Holes
(C) Electrons (D) Forbidden band
Solution : (A)
We konw that the recombination of free and mobile electrons and holes produces the narrow
region at the junction called depletion layer. It is so named because this region is devoid of free
and mobile charges carriers take electrons and holes and there being present only positive ions
which are not free to move.

8. In a forward biased p-n junction, the potential barrier

(A) Decreases (B) Increases
(C) Remains constant (D) Becomes zero
Solution : (A)
We know that for a forward-biased p-n junction, the forward current rises exponentially with the
applied forward voltage and get a certain potential, it is ready to break the potential barrier.
Therefore in forward biased p-n junction, the potential barrier will decrease.

9. The logic behind 'NOR' gate is that it gives

(A) High output when both the inputs are low
(B) Low output when both the inputs are low
(C) High output when both the inputs are high
(D) None of these
Solution : (A)
We know that the 'NOR' gate is the opposite of 'OR' gate. Therefore its gives a high output only
when both its inputs are low.

10. In n-type semi conductors, majority charge carriers are

(A) Holes (B) Protons
(C) Neutrons (D) Electrons
Solution : (D)

11. In the above problem, if VB = 5V, what should be the value of R to establish a current of 5mA in
the current of 5mA in the circuit?
(A) 4.3k  (B) 860k  (C) 4.3  (D) 860 
Sol. (D) VB = Vknee + I'R'
or 5 = 0.7 + 5  103 R' or R' = 860 
or 5 = 0.7 + 10–3 R or R = 4.3K 

12. In Q. 70, what is the power dissipated in the resistance R when a current of 5mA flows in the
circuit at VB = 6V-
(A) 3.5W (B) 3.5 mW (C) 26.5 W (D) 26.5mW
Sol. (D) 6 = 0.7 + 5  10 R' or R' = 1060 
3

P = I2R'' = (5  103)2  1060 = 26.5 mW

13. In the above problem, the power dissipated in the diode will be:
(A) 3.5W (B) 3.5 mW (C) 26.5 W (D) 26.5mW
Sol. (B) Power dissipated in diode
= VI = 0.74  5  103 = 3.5 mW
14. In Q. 70, if R = 1 K the minimum voltage VB required to keep the diode above the knee point
will be:
(A) 170 V (B) 17 V (C) 1.7 V (D) 0.17 V
Sol.% (C) VB = Vknee + IR = 0.7 + 103  103
= 1.7V output resistance
15. In a common emitter circuit if VCC is changed by 0.2 V, collector current changes by 4 x 10–3 mA.
The output resistance will be:
(A) 10 k (B) 30 k (C) 50 k (D) 70 k
knee 0.2
Sol.(C) R =   50K
Ice 0.004  103

16. A transistor has a base current of 1 mA and emitter current 100 mA. The collector current will be:
(A) 100 mA (B) 1 mA (C) 99 mA (D) None of these
Sol. (C) IC = Ie  Ib = (100  1) = 99mA

17. In the above problem, the current transfer ratio will be:
(A) 0.90 (B) 0.99 (C) 1.1 (D) None of these
IC 99
Sol. (B)  =   0.99
Ie 100

18. In Q.17 the current amplification factor () will be:

(A) 89 (B) 95 (C) 99 (D) 101
IC 99
Sol. (C) =   99
Ib 1

19. A transistor has  = 0.95. If the emitter current is 10 mA, then collector current will be:
(A) 9.5 mA (B) 10 mA (C) 0.95 mA (D) None of these
Sol. (A) Collector current
Ic = Ie = 0.95  10 = 9.5 mA

20. In the above problem, the base current will be:

(A) 0.1 mA (B) 0.2 mA (C) 0.3 mA (D) 0.5 mA
Sol.(D) Ib = Ie  Ic = (10  9.5) = 0.5mA

21. In Q. 90 the current amplification factor will be:

(A) 11 (B) 19 (C) 35 (D) 79
 0.95
Sol.(B)  =   19
1   1  0.95

22. Which one of the following gates can be served as a building block for any digital circuit?
(A) OR (B) AND
(C) NOT (D) NAND
Solution : (D)
We know that the basic gates (i.e. OR, AND and NOT) can be obtained by the repeated use of the
NAND gates. Therefore in the digital circuits NAND gates can be served as a building block.

23. The cause of the potential barrier in a p-n junction diode is

(A) Depletion of positive charges near the junction
(B) Depletion of negative charges near the junction
(C) Concentration of positive charges near the junction
(D) Concentration of positive and negative charges near the junction
Solution : (D)
We know that the concentration of holes and electrons are greater in p and n regions respectively
with some concentration difference. This concentration difference establishes density gradient and
it results into diffusion. Therefore a potential barrier is produced due to the concentration of
positive and negative charges near the junction.
24. A transistor having  = 0.99, is used in a common-base amplifier. If the load resistance is 4.5 K
and the dynamic resistance of the emitter junction is 50 K, the voltage gain of the amplifier will
be:
(A) 79.1 (B) 89.1 (C) 99.1 (D) None of these
RL 0.99  4500
Sol. (B)   891
Re 50

25. In the above problem, the power gain will be:

(A) 88.2 (B) 98.2 (C) 78.2 (D) None of these
Sol. (A) Ap = Current gain  voltage gain
0.99  89.1 = 88.2

26. The binary equivalent of 25 is:

(A) 111001 (B) 11001 (C) 10001 (D) 10011
Sol. (B) 25 = 16 + 8 + 1 = 1  2 + 1  2 + 0  2 + 0  2 + 1  20
4 3 2 1

 Binary equivalent = 11001

27. The decimal equivalent of 1111:

(A) 25 (B) 35 (C) 15 (D) 5
Sol. (C) 1111 = 1  2 + 1  2 + 1  2 + 1  2
3 2 1 0

= 8 + 4 + 2 + 1 = 15

28. In binary system, 11000101 represents the following number on decimal system:
(A) 4 (B) 401 (C) 197 (D) 204
Sol. (C) 11000101 = 1  2 + 1  2 + 0  2
7 6 5

+ 0  24 + 0  23 + 1  22 + 0  21 + 1  20
= 128 + 64 +0 + 0 + 0 + 4 +1 = 197

29. In a transistor circuit, when the base current is increased by 50 A, keeping collector voltage fixed
at 2 volt, the collector current increase by 1.0 mA. The current amplification factor of the transistor
will be:
(A) 10 (B) 20 (C) 30 (D) 40
Ic 1 103
Sol. (B)  =   20
Ib 50  106

30. The value of  for a transistor is 0.9. What would be the change in the collector current
corresponding to a change of 4 mA in the base current in a common emitter arrangement ?
(A) 36 mA (B) 72 mA (C) 18 mA (D) None of these
Ib 0.9  4
Sol. (A) Ic =  Ib =  = 25 mA
1  0.1
 ASSIGNMENT-2

1. In a common base circuit at VC = 3V, a change in emitter current from 12.0 mA to 18.5 mA
produces a change in collector current from 11.8 to 17.4 mA. The current gain will be:
(A) 0.9521 (B) 0.8615 (C) 0.7351 (D) None of these
 Ic  17.4  11.8 5.6
Sol. (B)  =      0.8615
 Ie Ve 18.5  12.0 6.5

2. For a common base amplifier, the values of resistance gain and voltage gain are 3000 and 2800
respectively. The current gain will be:
(A) 0.93 (B) 0.83 (C) 0.73 (D) 0.63
A V 2800
Sol. (A) AI =   0.93
AR 3000

3. In the above problem the power gain of the amplifier will be:
(A) 351.2 (B) 1575.30 (C) 2173.6 (D) 2613.3
A 2V  2800 
2

Sol. (D) AP =   2613.3

AR 3000

4. In the above problem, the collector current will be:

(A) 0.44 A (B) 1.44 A (C) 0.44 mA (D) 1.44 mA
3 6
Sol. (D) Ic = Ie  Ib = 1.5  10  60  10 = 1.44 mA

5. In the above problem, the collector current will be:

(A) 6.676 mA (B) 5.382 mA (C) 4.987 mA (D) None of these
3 3
Sol. (A) Ic = Ie  Ib = 6.8  10  0.124  10 = 6.676 mA

6. In a given transistor, the emitter current is changed by 2.1 mA. This results in a change of 2 mA in
the collector current and a change of 1.05 V in the emitter-base voltage. The input resistance is:
(A) 5000  (B) 3000  (C) 1000  (D) 500 
VEB 1.05
Sol. (D) Input resistance =   500
I 2.1 103

7. In the above problem, the A.C. gain of the transistor A.C. gain of the transistor (AC) will be:
(A) 0.90 (B) 0.95 (C) 0.99 (D) None of these
IC 2  103
Sol. (B) AC =   0.95
IB 2.1 103

8. In Q. 132, if the transistor is used in common emitter configuration, then the value of  AC will be:
(A) 9 (B) 19 (C) 29 (D) 39
 0.95
Sol. (B)  AC =   19
1   1  0.95
9. The DC current gain of a transistor in common base configuration is 0.98. Its current gain in
common emitter configuration will be:
(A) 99 (B) 69 (C) 49 (D) 39
 0.98 0.98
Sol. (C)  =    49
1   1  0.98 0.02

10. When the emitter current in a transistor is changed by 1 mA, then its collector current changes by
0.99 mA. The value of its common base current gain will be:
(A) 1.99 (B) 9.99 (C) 0.999 (D) 0.99
IC 0.99
Sol. (D)  =   0.99
IE 1

11. In the above problem, the value of common emitter current gain will be:
(A) 0.99 (B) 9.9 (C) 99 (D) 999
 0.99 0.99
Sol. (C)  =    99
1   1  0.99 0.01

12. In the above problem, the value of base current will be:
(A) 0.0132 mA (B) 0.132 mA (C) 0.00132 mA (D) 1.32 mA
Sol. (A) IB = IE= 1.1  1.0868 = 0.0132 mA

13. The current gain in a common base circuit is 0.98. When the emitter current is changed by 5 mA,
then the change in collector current will be:
(A) 0.196 mA (B) 2.45 mA (C) 4.90 mA (D) 5.10 mA
lC
Sol. (C) 
IE
or lC   lE  0.98x5  4.90 mA

14. A doped semiconductor has impurity levels 32 meV below the conduction band. The
semiconductor is:
(A) N-type (B) P-type
(C) N-P junction (D) None of the above
Sol. (A) The impurity level shifts towards conduction band in N-type semiconductor.

15. A potential barrier of 0.5 V exists across a p - n junction. If the width of depletion layer is 106 m,
the intensity of electric field in this region will be:
(A) 1 x 106 V/m (B) 5 x 105 V/m (C) 4 x 104 V/m (D) None of these
V 0.5
Sol. (B) E =  6  5  105 V/m
d 10

16. When a p-n junction in a diode is reverse biased, the thickness of the depletion layer
(A) increases (B) decreases
(C) become zero (D) remains constant
Solution : (A)
In reverse bias, as electrons and holes move away from the junction, the thickness of the depletion
layer increases.
17. The two diodes A and B are biased as shown, then
A
03V -6V

B
03V -6V

(A) The diodes A and B are reverse biased

(B) The diodes A is forward biased and B is reverse biased
(C) The diodes B is forward biased and diode A is reverse biased
(D) The diodes A and B are forward biased.
Solution : (D)

18. The potential in the depletion layer is due to

(A) electrons (B) holes
(C) ions (D) forbidden band
Solution : (C)

19. The width of forbidden gap in silicon crystal is 1.1 eV. When the crystal is converted in to a n-type
semiconductor the distance of Fermi level from conduction band is
(A) greater than 0.55 eV (B) equal to 0.55 eV
(C) lesser than 0.55 eV (D) equal to 1.1 eV
Solution : (C)

20. Consider the following statements A and B and identify the correct choice of the given answers.
(1) The width of the depletion layer in a p-n junction diode increases in forward bias.
(2) In an intrinsic semiconductor the Fermi energy level is exaclty in the middle of the forbidden
gap.
(A) A is true and B is False (B) Both A and B are false
(C) A is false and B is true (D) Both A and B is true
Solution : (C)
When a p-n junction diode is forward biased the thickness of depletion layer decreases and thereby
the current across the junction increases.
In an intrinsic semi-conductor, Fermi energy level will be in the middle of the forbidden gap.

IC I
21. In the study of transistor as amplifier, if   and   C where IC, IB, IE are the collector, base
IE IB
and emitted currents, then
(1   ) 
(A)   (B)  
 (1  )
 (1   )
(C)   (D)  
(1  ) 
Solution : (C)
22. A gate has the following truth table
A B R
1 1 1
1 0 0
0 1 0
0 0 0
The gate is:
(A) AND (B) OR
(C) NOR (D) NAND
Solution : (A)

23. Out of following the forward based diode is

-4V -3V
(A)
3V 3V
(B)
0V -2V
(C)
-2V 2V
(D)
Solution : (C)

24. The approximate ratio of resistance in the forward and reverse bias of the PN junction diode is
(A) 102 : 1 (B) 10–2 : 1
(C) 1 : 10–4 (D) 1 : 104
Solution : (D)

25. The resistance of a reverse biased pn junction diode is about :

(A) 1 ohm (B) 102 ohm
(C) 103 ohm (D) 106 ohm
Solution : (D)

26. On reducing forward voltage, the potential barrier

(A) increases (B) decreases
(C) unchanged (D) none of these
Solution : (A)

27. In the depletion layer, there are

(A) Only electrons (B) only holes
(C) electrons and holes (D) None of the above
Solution : (D)

28. Zener diode is used :

(A) As a amplifier (B) As a rectifier
(C) As a oscillator (D) As a voltage regulator
Solution : (D)
29. Which of the following is a correct relation for a transistor
 
(A)   (B)  
1  1 
 
(C)   (D)  
1  1 
Solution : (B)
IE = IB + IC
Differentiating, we get
IE  IB  IC
IE IB
  1
IC IC
1 1 1 
  1
  


1 

30. Which one is in forward bias :

(A)

(B)

(C)

(D) None of these

Solution : (B)
 CBSE-EXERCISE - I

1. What is a p-n junction diode? Explain with the help of a diagram, how is depletion region formed
near the junction? Explain also what happens to this layer when the junction is (i) forward biased
and (ii) reverse biased.

2. What is rectification? With the help of a labeled circuit diagram, explain full wave rectification
using junction diodes.

3. With the help of a labeled circuit diagram, explain how n-p-n transistor can be used as an amplifier
in common emitter configuration. Show the input and output wave forms.

4. Give the symbols of n-p-n and p-n-p transistors. Show the biasing of an n-p-n transistor and
explain the transistor action.

5. Explain by drawing a circuit diagram, how an AND gate can be realised in practice using
p-n junction diodes?

6. With the help of energy band diagram, distinguish between conductor, insulator and
semiconductor.

7. Distinguish between an intrinsic and an extrinsic semiconductor.

8. What is a Zener diode? Give its symbol. Write its one specific use.

9. Why is the common emitter amplifier preferred over a common base amplifier?

10. Is the potential difference across the two p-n-junctions in the

given circuit same or different? p n n p

+ –
 EXERCISE - II

1. Choose the correct statement:

(a) When we heat a semiconductor its resistance increases.
(b) When we heat a semiconductor its resistance decreases.
(c) When we cool a semiconductor to 00C then it becomes super conductor.
(d) Resistance of a semiconductor is independent of temperature.

2. Germanium is doped with arsenic, what will be the result?

(a) p-type semi-conductor (b) n-type semi-conductor
(c) Intrinsic semi-conductor (d) none of these

3. In a transistor, current gain for common base and common emitter configurations are  and 
respectively. The relation between  and  is

(a)    /1   (b)   1/ 1   (c)    / 1   (d)  = (1- )

4. A transistor in common base configuration has current gain  = 0.95. It has a change in emitter
current of 100 milliampere. Then the change in collector current is
(a) 95 mA (b) 100 mA (c) 99.05 mA (d) 100.95 mA

5. The value of current gain in common base amplifier is

(a) greater than one (b) less or greater than one
(c) less than one (d) none of these

6. The current gain for a transistor working as common-base amplifier is 0.96. If the emitter current is
7.2 mA, then the base current is
(a) 0.29 mA (b) 0.35 mA (c) 0.39 mA (d) 0.43 mA

7. Assuming the diodes are ideal, current through the battery is zero

(i) (ii) (iii)

(a) in (i) and (iii) (b) in (ii) and (iii) (c) in only (ii) (d) in only (iii)
8. Assuming ideal diode the current through the 1 resistance 2
in the circuit as shown in the figure is
2
(a) 2A (b) 1A
(c) 3A (d) none of the above 6V 1

9. The majority of current carrier in an n-type semiconductor are

(a) holes (b) electrons (c) negative ions (d) positive ions
10. In a forward biased p-n junction, the potential barrier
(a) becomes zero (b) decreases (c) increases (d) remain constant

11. A transistor can be used as an amplifier when

(a) base-emitter is forward biased and base-collector is reverse biased
(b) both base-emitter and base-collector are reverse biased
(c) both base-emitter and base-collector are forward biased
(d) none of these

12. The current gain in the common emitter mode of a transistor is 10. The input impedance is 20 k
and load of resistance is 100 k. The power gain is
(a) 300 (b) 500 (c) 200 (d) 100

13. A silicon diode has a threshold voltage of 0.7V. If an input voltage given by 2sin (t) is supplied to
a half-wave rectifier circuit using this diode, the rectifier output has a peak value of
(a) 2V (b) 1.4V (c) 1.3V (d) 0.7V

14. For a heavily doped n-type semi-conductor Fermi-level lies

(a) a little below the conduction band (b) a little above the valence band
(c) a little inside the valence band (d) at the centre of the band gap

15. The band diagrams of the three semiconductors are given in the figure. From left to right, they are
respectively

C C C
EF
EF EF
V V V
(a) n-intrinsic-p (b) p-intrinsic-n (c) intrinsic-p-n (d) p-n-intrinsic

16. A solid which is not transparent to visible light and whose conductivity increases with temperature
is formed by
(a) Metallic binding (b) Ionic binding
(c) Covalent binding (d) Vander Waals binding

17. In a common base mode of a transistor, the collector current is 5.488 mA for an emitter current of
5.60 mA. The value of the base current amplification factor () will be
(a) 48 (b) 49 (c) 50 (d) 51

18. If the lattice constant of this semiconductor is Conducting band width EC

decreased, then which of the following is band gap Eg

correct? Valence band width EV
(a) All EC, Eg, Ev decrease (b) All EC, Eg, Ev increase
(c) EC, and Ev increase, but Eg decrease (d) EC, and Ev decrease, but Eg increases
19. In the following, which one of the diodes is reverse biased?
+5V

R
+10V
(a)
(b)
R
+5V

–12V
(c) R (d) R

–5V –10V

20. The circuit has two oppositely connected ideal diodes in 4

parallel. What is the current flowing in the circuit? D1 D2

(a) 01.33 A (b) 1.71 A 12V
3 2
(c) 2.00 A (d) 2.31 A
 ANSWERS TO EXERCISE - II
1. (b) 2. (b) 3. (a) 4. (a) 5. (c)

6. (a) 7. (c) 8. (a) 9. (b) 10. (b)

11. (a) 12. (b) 13. (c) 14. (a) 15. (a)

16. (c) 17. (b) 18. (c) 19. (a) 20. (c)
 IMPORTANT PRACTICE QUESTION SERIES FOR IIT-JEE EXAM – 1
Q.1 In conductors -
(1) conduction band is completely empty but forbidden energy gap is small
(2) conduction and valence bands are overlapped
(3) valence band is completely filled but the conduction band is completely empty
(4) no energy band is present

Q.2 The forbidden energy gap of a germanium semiconductor is 0.75 eV. The minimum thermal
energy of electrons reaching the conduction band from the valence band should be -
(1) 0.5 eV (2) 0.75 eV
(3) 0.25 eV (4) 1.5eV

Q.3 The energy of a photon of sodium light ( = 5890Å) equals the band gap of a semiconductor. The
minimum energy required to create an electron-hole pair is -
(1) 0.026 eV (2) 0.31 eV
(3) 2.1eV (4) 6.4 eV

Q.4 The forbidden energy band gap in conductors, semiconductors and insulators are EG1, EG2 and
EG3 respectively. The relation among them is -
(1) EG1 = EG2 = EG3
(2) EG1 < EG2 < EG3
(3) EG1 > EG2 > EG3
(4) EG1 < EG2 > EG3

Q.5 On increasing temperature the specific resistance of a semiconductor -

(1) decreases
(2) increases
(3) remains constant
(4) becomes zero

Q.6 Which of the following statements is not correct ?

(1) Resistance of semiconductor decreases with increase in temperature
(2) In an electric field, displacement of holes is opposite to the displacement of electrons
(3) Resistance of a conductor decreases with the increase in temperature
(4) n-type semiconductors are neutral

Q.7 Wires P and Q have the same resistance at ordinary (room) temperature. When heated,
resistance of P increases and that of Q decreases. We conclude that -
(1) P and Q are conductors of different materials
(2) P is N-type semiconductor and Q is P-type semiconductor
(3) P is semiconductor and Q is conductor
(4) P is conductor and Q is semiconductor

Q.8 In a good conductor the energy gap between the conduction band and the valence band is -
(1) Infinite (2) Wide
(3) Narrow (4) Zero

Q.9 In a semi conducting material the mobilities of electrons and holes are e and h respectively.
Which of the following is true ?
(1) e > h (2) e < h
(3) e = h (4) e < 0; h > 0
Q.10 Those materials in which number of holes in valence band is equal to number of electrons in
conduction band are called
(1) conductors
(2) Intrinsic semiconductors
(3) p-type semiconductors
(4) n-type semiconductors

Q.11 In p-type semiconductor holes move in

(1) forbidden region
(2) conduction band
(3) valence band
(4) all the above regions

Q.12 Which of the following statement is wrong ?

(1) Resistance of extrinsic semiconductors can be changed as required
(2) In n-type semiconductor the number of electrons increases in valence band
(3) In p-type semiconductors the number of holes increases in valence band
(4) In pure semiconductor fermi band is situated in between the valence band and conduction
band

Q.13 P-type semiconductor is formed when -

A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge
(1) A and C (2) A and D
(3) B and C (4) B and D

Q.14 In extrinsic semiconductors -

(1) The conduction band and valence band overlap
(2) The gap between conduction band and valence band is more than 16 eV
(3) The gap between conduction band and valence band is near about 1 eV
(4) The gap between conduction band and valence band will be 100 eV and more

Q.15 Fermi level of energy of an intrinsic semiconductor lies -

(1) In the middle of forbidden gap
(2) Below the middle of forbidden gap
(3) Above the middle of forbidden gap
(4) Outside the forbidden gap

Q.16 If ne and vd be the number of electrons and drift velocity in a semiconductor. When the temperature
is increased -
(1) ne increases and vd decreases
(2) ne decreases and vd increases
(3) Both ne and vd increases
(4) Both ne and vd decreases

Q.17 The electron mobility in N-type germanium is 3900 cm2/v.s and its conductivity is 6.24 mho/cm,
then impurity concentration will be if the effect of cotters is negligible -
(1) 1015 cm3 (2) 1013/cm3
(3) 10 /cm
12 3 (4) 1016/cm3
Q.18 In semiconductor the concentrations of electrons and holes are 8 × 1018/m3 and
5 × 1018/m3 respectively. If the mobilities of electrons and hole are 2.3 m2/volt-sec and
0.01 m2/volt-sec respectively, then semiconductor is -
(1) N-type and its resistivity is 0.34 ohm-metre
(2) P-type and its resistivity is 0.034 ohm-metre
(3) N-type and its resistivity is 0.034 ohm-metre
(4) P-type and its resistivity is 3.40 ohm-metre

Q.19 A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area
1 cm2 and thickness 0.5 mm. If the concentration of electrons in Ge is 2 × 1019/m3 and mobilities
m2 m2
of electrons and holes are 0.36 and 0.14 respectively, then the current flowing
volt  sec volt  sec
through the plate will be -
(1) 0.25 A (2) 0.45 A
(3) 0.56 A (4) 0.64 A

Q.20 A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 5.0 × 10–7 m
wide, the intensity of the electric field in this region is -
(1) 1.0 × 106 V/m (2) 1.0 × 105\ V/m
(3) 2.0 × 10 V/m
5 (4) 2.0 × 106 V/m

Q.21 If no external voltage is applied across P-N junction, there would be -

(1) No electric field across the junction
(2) An electric field pointing from N-type to P-type side across the junction
(3) An electric field pointing from P-type to N-type side across the junction
(4) A temporary electric field during formation of P-N junction that would subsequently
disappear

Q.22 No bias is applied to a P-N junction, then the current -

(1) Is zero because the number of charge carriers flowing on both sides is same
(2) Is zero because the charge carriers do not move
(3) Is non-zero
(4) None of these

Q.23 The main cause of avalanche breakdown is -

(1) collision ionisation
(2) high doping
(3) recombination of electron and holes
(4) none of these

Q.24 The main cause of Zener breakdown is -

(1) the base semiconductor being germanium
(2) production of electron-hole pairs due to thermal excitation
(3) low doping
(4) high doping

Q.25 Which of the following statements is correct ?

(1) The depletion region of P-N junction diode increases with forward biasing
(2) The depletion region of P-N junction diode decreases with reverse biasing
(3) The depletion region of P-N junction diode does not change with biasing
(4) The depletion region of P-N junction diode decreases with forward biasing
Q.26 When reverse bias in a junction diode is increased, the width of depletion layer -
(1) increase (2) decreases
(3) does not change (4) fluctuate

Q.27 A semiconductor device is connected in a series circuit with a battery and resistance. A current is
found to pass through the circuit. If the polarity of the battery is reversed, the current drops
almost to zero. The device may be -
(1) A P-type semiconductor
(2) An N-type semiconductor
(3) A PN-junction
(4) An intrinsic semiconductor

Q.28 The approximate ratio of resistances in the forward and reverse bias of the PN-junction diode is -
(1) 102 : 1 (2) 10–2 : 1
(3) 1 : 10 –4 (4) 1 : 104

Q.29 The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N
junctions are -
(1) Drift in forward bias, diffusion in reversebias
(2) Diffusion in forward bias, drift in reverse bias
(3) Diffusion in both forward and reverse bias
(4) Drift in both forward and reverse bias
Q.30 A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second
semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to
end and connected to a battery as shown. Which of the following statements is correct ?
X Y

(1) X is P-type, Y is N-type and the junction is forward biased

(2) X is N-type, Y is P-type and the junction is forward biased
(3) X is P-type, Y is N-type and the junction is reverse biased
(4) X is N-type, Y is P-type and the junction is reverse biased
Q.31 In the given figure, which of the diodes are forward biased ?
+5V
R +10V

1. 2.+5V

–12V
3. –10V 4. R

–5V

R
5.
–10V
(1) 1, 2, 3 (2) 2, 4, 5
(3) 1, 3, 4 (4) 2, 3, 4
Q.32 For the given circuit of PN-junction diode, which of the following statements is correct -

V
(1) In forward biasing the voltage across R is V
(2) In forward biasing the voltage across R is 2V
(3) In reverse biasing the voltage across R is V
(4) In reverse biasing the voltage across R is 2V

Q.33 Current in the circuit will be -

20

30

i
20 5V

5 5 5 5
(1) A (2) A (3) A (4) A
40 50 10 20

Q.34 The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all currents
and a maximum power rating of 100 milli watts. What should be the value of the resistor R,
connected in series with the diode for obtaining maximum current -
R 0.5V

1.5V

(1) 1.5  (2) 5  

 (3) 6.67  (4) 200 

Q.35 In the following circuits PN-junction diodes D1, D2 and D3 are ideal for the following potential of A
and B, the correct increasing order of resistance between A and B will be -
D1 R

D2 R

R D3 R R
4 4
A B
(i) – 10 V, – 5 V (ii) – 5V, – 10 V
(iii) – 4V, – 12 V
(1) (i) < (ii) < (iii) (2) (iii) < (ii) < (i)
(3) (ii) = (iii) < (i) (4) (i) = (iii) < (ii)
Q.36 Which is the correct diagram of a half-wave rectifier?
+

(1)
–
+

(2)
–
+

(3)
–
+

(4)
–

Q.37 In the diagram, the input is across the terminals A and C and the output is across the terminals B
and D, then the output is -
B

A C

D
(1) zero (2) same as input
(3) full wave rectifier (4) half wave rectifier

Q.38 If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the
ripple will be -
(1) 50 Hz (2) 70.7 Hz
(3) 100 Hz (4) 25 Hz

Q.39 In a full wave rectifiers input ac current has a frequency . The output frequency of current is -
(1) /2 (2) 
(3) 2 (4) None of these

Q.40 A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the circuit
shown so that half wave rectification occurs. If the forward resistance of the diode is negligible
compared to R then rms voltage (in volt) across R is approximately -

E0 = 200 volt ~ R

200
(1) 200 (2) 100 (3) (4) 280
2
Q.41 In the half-wave rectifier circuit shown. Which one of the following wave forms is true for VCD, the
output across C and D?
A C

~ P Q VCD RL

B D

(1) (2)

(3) (4)

Q.42 A full wave rectifier circuit along with the input and output voltage is shown in the figure.
1 Output
2 voltage

Input
voltage

Output
voltage A B C D

The contribution to output voltage from diode – 2 to -

(1) A, C (2) B, D
(3) B, C (4) A, D

Q.43 The output current versus time curve of a rectifier is shown in the figure. The average value of the
input current in this case is -
Current 

i0
Time 
(1) 0 (2) i0/ (3) 2i0/ (4) i0

Q.44 n-p-n transistors are preferred to p-n-p transistors because -

(1) they have low cost
(2) they have low dissipation energy
(3) they are capable of handling large power
(4) electrons have high mobility than holes and hence high mobility of energy
Q.45 An n-p-n transistor circuit is arranged as shown in fig. It is -

n RL
p Vout
n
Vin

(1) a common-base amplifier circuit

(2) a common-emitter amplifier circuit
(3) a common-collector amplifier circuit
(4) none of the above

Q.46 Compared to CB amplifier, the CE amplifier has -

(1) lower input resistance
(2) higher output resistance
(3) lower current amplification
(4) higher output resistance

Q.47 In the given transistor circuit, the base current is 35 A. The value of Rb is -
E C
B

Rb RL
7V

(1) 100 k (2) 200 k

(3) 300 k (4) 400 k

Q.48 I. In a P-N-P type common base amplifier the input and output are in same phase.
II. In a P-N-P common base amplifier input and output are out of phase.
III. In a N-P-N- common base amplifier the input and output are in same phase.
IV. In a N-P-N common base amplifier input and output are out of phase.
State if -
(1) I and III are correct
(2) II and III are correct
(3) I and IV are correct
(4) II and IV are correct
Q.49 In a transistor the base is made very thin and is lightly doped with an impurity because-
(1) to enable the collector to collect 95% of The holes or electrons coming from the emitter side
(2) to enable the emitter to emit small number of holes or electrons
(3) to save the transistor from higher current effects
(4) none of the above
Q.50 In an NPN transistor 1010 electrons enter the emitter in 10–6s. 2% of the electrons are lost in the
base. The current transfer ratio will be-
(1) 0.95 (2) 0.96 (3) 0.97 (4) 0.98
Q.51 In an NPN transistor the values of base current and collector current are 100A and 9 mA
respectively, the emitter current will be-
(1) 9.1 mA (2) 18.2 mA
(3) 9.1A (4) 18.2 A
Q.52 For a common base amplifier, the values of resistance gain and voltage gain are 3000 and 2800
respectively. The current gain will be -
(1) 0.93 (2) 0.83 (3) 0.73 (4) 0.63

Q.53 Given below are four logic gate symbol (figure). Those for OR, NOR and NAND are respectively -
y y
A A
B B
(a) (b)
y y
A A
B B
(c) (d)
(1) a, d, c (2) d, a, b
(3) a, c, d (4) d, b, a

Q.54 The following truth table corresponds to the logic gate -

A 0 0 1 1
B 0 1 0 1
X 0 1 1 1
(1) NAND
(2) OR
(3) AND
(4) XOR

Q.55 The combination of ‘NAND’ gates shown here under (figure) are equivalent to –
A
C
B

A
B C

(1) An OR gate and an AND gate respectively

(2) An AND gate and a NOT gate respectively
(3) An AND gate and an OR gate respectively
(4) An OR gate and a NOT gate respectively

Q.56 For the given combination of gates, if the logic states of inputs A, B, C are as follows A = B = C = 0
and A = B = 1, C = 0 then the logic states of output D are -
A
B G1 G2
C D
(1) 0, 0 (2) 0, 1
(3) 1, 0 (4) 1, 1

Q.57 Which of the following gates will have an output of 1 ?

1
(1) 0 (2) 10
(3) 01 (4) 10
Q.58 This symbol represents -
A
y
B
(1) NOT gate
(2) OR gate
(3) AND gate
(4) NOR gate

Q.59 The output of a NAND gate is 0 -

(1) If both inputs are 0
(2) If one input is 0 and the other input is 1
(3) If both inputs are 1
(4) Either if both inputs are 1 or if one of the inputs is 1 and the other 0

Q.60 Which logic gate is represented by the following combination of logic gates -
A
Y

B
(1) OR (2) NAND
(3) AND (4) NOR

Q.61 The output of OR gate is 1 -

(1) If both inputs are zero
(2) If either or both inputs are 1
(3) Only if both input are 1
(4) If either input is zero
 IMPORTANT PRACTICE QUESTION SERIES FOR IIT-JEE EXAM – 2
Q.1 Which of the following statement is true ?
(1) In insulators the conduction band is completely empty
(2) In conductor the conduction band is completely empty
(3) In semiconductor the conduction band is partially empty at low temperature
(4) In insulators the conduction band is completely filled with electrons

Q.2 The materials resistance of which decreases with increases in temperature (i.e. the temperature
coefficient of resistance is negative) are called -
(1) conductors
(2) insulators
(3) semiconductors
(4) all of the above
Q.3 The diffusion current in a p-n junction is from -
(1) p-side to n-side
(2) n-side to p-side
(3) p-side to n-side if the junction is forward biased and in the opposite direction if it is reverse
biased
(4) n-side to p-side if the junction is forward biased and in the opposite direction if it is reverse
based
Q.4 In n-type semiconductors the Fermi energy level is displaced -
(1) towards the valence band
(2) towards the conduction band
(3) not displaced
(4) and it does not depend on quantity of impurity
Q.5 If n-type semiconductor is heated then -
(1) the number of electrons increases and the number of holes decreases
(2) the number of holes increases and the number of electrons decreases
(3) at the number of electrons and holes both remains equal
(4) the number of both electrons and holes increases
Q.6 Forbidden energy gap of a silicon semiconductor is 1.12 eV. In order to generate electron-hole pairs
in it, the maximum wavelength of the incident photons will be -
(1) 11080Å (2) 11250Å
(3) 12370Å (4) 14400Å
Q.7 If the two ends of a p-n junction are joined by a conducting wire, then -
(1) there will be no current in the circuit
(2) there will be steady current from n-side to p-side
(3) there will be steady current from p-side to n-side
(4) there will be a steady current in the circuit
Q.8 A doped semiconductor has impurity levels 32 meV below the conduction band. The
semiconductor is -
(1) N-type (2) P-type
(3) N-P junction (4) none of the above
Q.9 The mean free path of a conduction electron in a metal is 5 × 10-8 m. The electric field, required to
be applied across the conductor so as to impart 1eV energy to the conduction electron, will be -
(1) 1 × 10–7 V/m (2) 2 × 107 V/m
(3) 3 × 10 V/m
7 (4) 4 × 107 V/m
Q.10 Which of the following statements is correct ?
(1) when forward bias is applied on a p-n junction then current does not flow in the circuit
(2) rectification of alternating current can not be achieved by p-n junction
(3) when reverse bias is applied on a p-n junction then it acts as a conductor
(4) some potential gap developed across the p-n junction when it is formed
Q.11 In semiconductor the concentrations of electrons and holes are 8 × 1018/m3 and 5 × 1018/m3
respectively. If the mobilities of electrons and holes are 2.3 m2/V-s and 0.01 m2/V-s respectively,
then semiconductor is -
(1) N-type and its resistivity is 0.34 ohm-metre
(2) P-type and its resistivity is 0.034 ohm-metre
(3) N-type and its resistivity is 0.034 ohm-metre
(4) P-type and its resistivity is 3.40 ohm-metre

Q.12 The current through an ideal PN junction shown in the following circuit diagram will be -
P N 700

5V 2V

(1) 5 mA (2) 10 mA
(3) 70 mA (4) 100 mA
Q.13 Two identical p-n junction may be connected in series with a battery in three ways (fig). The
potential drops across the p-n junctions are equal in -
P N N P
(1) circuit 1 and 2

P N P N
(2) circuit 2 and 3

N P N P
(3) circuit 3 and 1

(4) circuit 1 only

Q.14 In the figure , an A.C. of 200 rms voltage is applied to the circuit containing diode and the
capacitor and it is being rectified. The potential across the capacitor C will be -

~ 200 V C
rms

(1) 500V
(2) 200V
(3) 283V
(4) 141V
Q.15 Which of the following statements is wrong ?
(1) The resistance of a semiconductor decreases with the increases of temperature
(2) In electric field the displacement of holes is opposite in direction to that of electrons
(3) The resistance of conductor decreases with the increase of temperature
(4) N-type semiconductors are neutral
Q.16 The value of current in the following diagram will be –
–4V –1V
PN 300
(1) 0.10 Ac (2) 10–2 A
(3) 1 A (4) 0 A

Q.17 In which of the following figures the junction diode is in reverse bias

N P
–10V –5V
(1) (2)

–5V
10V
–6V

N P
(3) P N (4)
5V

Q.18 The output of the given logic gate is 1 when inputs A, B and C are such that-
A Y
B
C
(1) A = 1, B = 0, C = 1
(2) A = 1, B = 1, C = 0
(3) A = B = C = 0
(4) A = B = C = 1

Q.19 The truth table given below is for-

A B Y
0 0 1
0 1 0
1 0 0
1 1 1
(1) OR gate (2) AND gate
(3) XNOR gate (4) XOR gate

Q.20 The arrangement shown in figure performs the logic function of a/an ........... gate –
A
Y
B
(1) OR (2) XOR
(3) NAND (4) AND

Q.21 The output of gate is low when at least one of its two input is high. This is true for -
(1) NOR (2) OR
(3) AND (4) NAND
Q.22 An XOR gate produces an output only when its two inputs are -
(1) same (2) different(3) low (4) high
Q.23 You are given two circuits as shown in following figure. The logic operation carried out by the
two circuit are respectively-
A
Y'
B
A

Y
B
(1) AND, OR (2) OR, AND
(3) NAND, OR (4) NOR, AND
Q.24 Which of the following Boolean expression is not correct -
(1) A . B = A + B (2) A  B = A.B
  
(3) A.B . A.B = AB (4) 1  1 = 1

Q.25 In Boolean algebra, which of the following is not equal to zero-

(1) A.A (2) A.0 (3) A  A (4) A . 0

Q.26 Digital circuits can be made by repetitive use of-

(1) OR gate (2) AND gate
(3) NOT gate (4) NAND gate
Q.27 Which of the following relation is valid in Boolean algebra -
(1) A  A  0 (2) A + A = 2A
(3) A  A  1 (4) A  A  A
Q.28 Given below are four logic symbols. Those for OR, NOR and NAND gates are respectively-
A A Y
(a) Y (b)
B
B
A A Y
(c) Y (d)
B
B
(1) a, d, c (2) d, a, b
(3) a, c, d (4) d, b, a

Q.29 When all the inputs of a NAND gate are connected together, the resulting circuit is-
(1) a NOT gate (2) an AND gate
(3) an OR gate (4) a NOR gate
Q.30 Which of the following pairs are universal gates-
(1) NAND, NOT (2) NAND, AND
(3) NOR, OR (4) NAND, NOR
Q.31 A NAND gate followed by a NOT gate is-
(1) an OR gate (2) an AND gate
(3) a NOR gate (4) a XOR gate
Q.32 The NOR gate is logically equivalent to an OR gate followed by -
(1) an inverter (2) a NOR gate
(3) a NAND gate (4) an OR gate
Q.33 The output of a two input NOR gate is in state 1 when-
(1) either input terminals is at 0 state
(2) either input terminals is at 1 state
(3) both input terminals are at 0 state
(4) both input terminals are at 1 state
Q.34 'Output is LOW if and only if all the inputs are HIGH' indicate the logic gate for which the above
statement is true-
(1) AND (2) OR
(3) NOR (4) NAND

Q.35 The truth table shown is of-

A B Y
0 0 0
0 1 1
1 0 1
1 1 0
(1) NAND gate (2) NOR gate
(3) XOR gate (4) XNOR gate

Q.36 The output Y of the combination of gates shown is equal to-

A Y

B AND
OR
(1) A (2) A
(3) A + B (4) AB

Q.37 Which of the following relations is valid for Boolean algebra -

(1) A + A = A (2) A.A = A
(3) A. A = 0 (4) all

Q.38 What would be the output of the circuit whose Boolean expression Y = AB + AB when
A = 1, B = 0 -
(1) 1 (2) 0
(3) both (1) & (2) (4) none of these

Q.39 The diagram of a logic circuit is given below. The output of the circuit is represented by-
W
X Output
W
Y
(1) W.(X + Y) (2) X.(X.Y)
(3) W + (X + Y) (4) W + (X.Y)

Q.40 The following configuration of gates is equivalent to –

A
B
Y

(1) NAND (2) OR

(3) XOR (4) NOR

Q.41 To get an output 1, the input ABC should be-

A
B Y
C
(1) 101 (2) 100
(3) 110 (4) 010
Q.42 The output of 2 input gate is 1 only if its inputs are equal. It is true for-
(1) NAND (2) AND
(3) EX-NOR (4) EX-OR

Q.43 The circuit-shown here is logically equivalent to-

A
Y
B
(1) OR gate (2) AND gate
(3) NOT gate (4) NAND gate

Q.44 A two-input NAND gate is followed by a single input NOR gate. This logic circuit will function as-
(1) an AND gate (2) an OR gate
(3) a NOT gate (4) a NOR gate

Q.45 Which of the following will have an output of 1 –

1 0
(a) (b)
1 1
0 Y 0
(c) (d) Y
1
0
(1) a (2) c (3) b (4) d

Q.46 The logic symbols shown here are logically equivalent to –

A Y A Y
B (a) B (b)
(1) 'a' AND and 'b' OR gate
(2) 'a' NOR and 'b' NAND gate
(3) 'a' OR and 'b' AND gate
(4) 'a' NAND and 'b' NOR gate

Q.47 Output of the four entries is given in the truth table, the correct ones for a two-input AND gate
are-
A B Y
0 0 1
1 1 1
1 0 0
0 1 0
(1) 1 and 2 only
(2) 2, 3 and 4 only
(3) 1, 3 and 4 only
(4) 2 and 4 only
Q.48 The combination of the gates shown will produce
A

B
(1) OR gate
(2) AND gate
(3) NOR gate
(4) NAND gate
Q.49 Which of the following represents correctly the truth table of configuration of gates shown here
A

B
A B Y A B Y
0 0 0 0 0 1
0 1 1 0 1 0
(1) 1 0 1 (2) 1 0 0
1 1 1 1 1 1
A B Y A B Y
0 0 0 0 0 1
0 1 1 0 1 1
(3) 1 0 1 (4) 1 0 1
1 1 0 1 1 0

Q.50 The truth table for the following combination of gates is-
A Y

B
A B Y A B Y
0 0 0 0 0 0
0 1 0 0 1 0
(a) 1 0 1 (b) 1 0 0
1 1 1 1 1 1
A B Y A B Y
0 0 1 0 0 0
0 1 1 0 1 1
(c) 1 0 1 (d) 1 0 1
1 1 0 1 1 0

(1) a (2) b (3) c (4) d

Q.51 The combination of the gates shown represents-

A
Y

B
(1) AND gate (2) OR gate
(3) NAND gate (4) NOR gate

Q.52 Which of the following relations is valid for Boolean algebra-

(1) A(B  B)  A
(2) A + AB = A
(3) A + 0 = A
(4) all

Q.53 On increasing the temperature the specific resistance of a semiconductor -

(1) increases
(2) decreases
(3) does not change
(4) first decreases and then increases
Q.54 Platinum and silicon are cooled after heating up to 250ºC -
(1) resistance of platinum will increase and that of silicon decreases
(2) resistance of silicon will increase and that of platinum decreases
(3) resistance of both will decrease
(4) resistance of both increases
Q.55 The atomic bonding is same for which of the following pairs -
(1) Ag and Si (2) Ge and Si
(3) Ne and Ge (4) NaCl and Ge
Q.56 Which of the following energy band diagram shows the N-type semiconductor -
Conduction Conduction
Band Band

(1) Eg =1eV (2) Inpurity level

1eV
Valence Valence
Band Band

Valence Valence
Band Band

(3) Inpurity level (4) 1eV

Inpurity level
1eV
Conduction Conduction
Band Band

Q.57 Which value of potential barrier is in the range, for given PN junction -
(1) 0.2 (2) 25
(3) 2.5 (4) 35
Q.58 In a P-N junction diode not connected to any circuit-
(1) potential is the same every where
(2) the P-type side is at a higher potential than the N-type side
(3) there is an electric field at the junction directed from the N-type side to the P-type side
(4) there is an electric field at the junction directed from the P-type side to the N-type side

Q.59 A transistor is used in the common emitter mode as an amplifier then-

(A) the base emitter junction is forward biased
(B) the base emitter junction is reverse biased
(C) the input signal is connected in series with the voltage applied to bias the base emitter
junction
(D) the input signal is connected in series with the voltage applied to bias the base collector
junction
(1) A, B (2) A, D (3) A, C (4) only C
Q.60 When a potential difference is applied across, the current passing through-
(1) a semiconductor at 0 K is zero
(2) a metal at 0 K is finite
(3) a P-N diode at 300 K is finite if it is reverse biased
(4) all
Q.61 Electric conduction in a semiconductor takes place due to-
(1) electrons only (2) holes only
(3) both electrons and holes (4) neither electrons nor holes
Q.62 Let np and ne be the numbers of holes and conduction electrons in an extrinsic semiconductor.
(1) np > ne (2) np = ne
(3) np < ne (4) np  ne
Q.63 A p-type semiconductor is-
(1) positively charged
(2) negatively charged
(3) uncharged
(4) uncharged at 0 K but charged at higher temperatures
Q.64 When an impurity is doped into an intrinsic semiconductor, the conductivity of the
semiconductor -
(1) increases (2) decreases
(3) remains the same (4) become zero

Q.65 The minority current in a p-n junction is-

(1) from the n-side to the p-side
(2) from the p-side to the n-side
(3) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it
is reverse biased
(4) from the p-side to the n-side if the junction is forward-biased and in the opposite direction if it
is reverse biased

Q.66 The diffusion current in a p-n junction is-

(1) from the n-side to the p-side
(2) from the p-side to the n-side
(3) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it
is reverse biased
(4) from the p-side to the n-side if the junction is forward-biased and in the opposite direction if it
is reverse biased

Q.67 Diffusion current in a p-n junction is greater than the drift current in magnitude-
(1) if the junction is forward-biased
(2) if the junction is reverse-biased
(3) if the junction is unbiased
(4) in no case

Q.68 A hole diffuses from the p-side to the n-side in a p-n junction. This means that-
(1) a bond is broken on the n-side and the electron freed from the bond jumps to the conduction
band
(2) a conduction electron on the p-side jumps to a broken bond to complete it
(3) a bond is broken on the n-side and the electron free from the bond jumps to a broken bond
on the p-side to complete it
(4) a bond is broken on the p-side and the electron free from the bond jumps to a broken bond
on the n-side to complete it

Q.69 In a transistor-
(1) the emitter has the least concentration of impurity
(2) the collector has the least concentration of impurity
(3) the base has the least concentration of impurity
(4) all the three regions have equal concentration of impurity
Q.70 For the given circuit shown in figure to act as full wave rectifier, a.c. input should be connected
across .......... and ....... the d.c. output would appear across ....... and ...........
A

B D

C
(1) A, C, B, D (2) B, D, A, C
(3) A, B, C, D (4) C, A, D, B

Q.71 In a .............. biased P-N junction, the net flow holes is from N-region to the P-region -
(1) F.B. (2) R.B.
(3) NO (4) both 1 & 2

Q.72 The intrinsic semiconductor becomes an insulator at -

(1) 0ºC (2) 0 K
(3) 300 K (4) –100 ºC

Q.73 Region which have no free electrons and holes in a p-n junction is-
(1) p-region
(2) n-region
(3) junction
(4) depletion region

Q.74 In an n-p-n transistor circuit, the collector current is 20mA. If 90% of electron emitted reach the
collector -
(1) the emitter current will be 18 mA
(2) emitter current will be 22 mA
(3) base current will be 2 mA
(4) base current will be 1 mA

Q.75 What will be conductance of pure silicon crystal at 300 K temperature. If electron hole pairs per
cm3 is 1.072 × 1010 at this temperature, µn = 1350 cm2/volt-s and µp = 480 cm2/volt-s
(1) 3.14 × 10–6 mho/cm
(2) 3 × 106 mho/cm
(3) 10–6 mho/cm
(4) 10 mho/cm

Q.76 In sample of pure silicon 1013 atom/cm3 is mixed of phosphorus. If all donor atoms are active
then what will be resistivity at 20ºC if mobility of electron is 1200 cm2/volt-s -
(1) 0.5209 ohm cm (2) 5.209 ohm cm
(3) 52.09 ohm cm (4) 520.9 ohm cm

Q.77 Mobility of electrons in N-type Ge is 5000 cm2/volt sec and conductivity 5 mho/cm. If effect of
holes is negligible then impurity concentration will be-
(1) 6.25 × 1015 cm3 (2) 9.25 × 1014 cm3
13 3
(3) 6 × 10 cm (4) 9 × 1013 cm3

Q.78 Out of the following, which substance is not a semiconductor-

(1) ZnS (2) Cds (3) SiC (4) LiS
Q.79 Out of the following, which substance is not a semiconductor-
(1) Se (2) Te
(3) CuCl (4) CuO

Q.80 A two volts battery forward biases a diode however there is a drop of 0.5 V across the diode
which is independent of current. Also a current greater than 10 mA produce large joule loss and
damages diode. If diode is to be operated at 5 mA, the series resistance to be put is-
2V
()

(1) 3 k (2) 300 k

(3) 300  (4) 200 k
IMPORTANT PRACTICE QUESTION SERIES FOR IIT-JEE EXAM – 1 (ANSWERS)

Q.No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Ans. 2 2 3 2 1 3 4 4 1 2 3 2 3 3 1 1 4 1 4 1 2 2 1 2 4
Q.No. 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Ans. 1 3 4 2 4 2 4 2 2 3 2 3 3 3 2 2 2 1 4 2 4 2 1 1 4
Q.No. 51 52 53 54 55 56 57 58 59 60 61
Ans. 1 1 3 2 1 4 3 1 3 3 2

IMPORTANT PRACTICE QUESTION SERIES FOR IIT-JEE EXAM – 2 (ANSWERS)

Q.No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Ans. 1 2,3 1 2 4 1 1 1 2 4 1 2 2 3 3 4 2 4 3 1
Q.No. 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Ans. 1 2 1 4 4 4 3 3 1 4 2 1 3 4 3 1 4 1 4 3
Q.No. 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Ans. 1 3 1 2 2 4 2 3 3 1 1 4 2 2 2 2 1 3 3 4
Q.No. 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80
Ans. 3 4 3 1 1 2 1 3 3 2 2 2 4 2,3 1 4 1 4 4 3