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Lecture-6-ECD-DE44

it is about the values of capacitor internal resistance

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6 views

Lecture-6-ECD-DE44

it is about the values of capacitor internal resistance

Uploaded by

tanveer1111110
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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EE-313 Electronic Circuit Design

Lecture 6
Dr Zaki EE-313
Uddin Electronic Circuit Design
[email protected]
Low-Frequency Response of CS Amplifiers
If a dominant pole does not exist, the following approximate expression for fL can be used.

fL  f p21  f p22  f p23  2 f Z2


Determining the Pole and Zero Frequencies by Inspection: Since the capacitors in the CS amplifier circuit do not
interact, a simple procedure exists for determining the frequencies of the pole and zero introduced by each capacitor.

Consider first the zeros. By its definition, a transmission zero is the value of s at which the input does not reach the
output, resulting in Vo = 0. Examination of the circuit in Figure indicates that CC1 becomes an infinite impedance at
s = 0 and thus introduces a transmission zero at s = 0 (i.e., blocks dc).

An identical statement applies to CC2. However, the bypass capacitor CS has a different effect: Its transmission zero
is at the value of s that causes ZS to become infinite, and hence Is, Id , and Vo become zero, which is sZ given by
sZ=1/CsRs
Low-Frequency Response of CS Amplifiers
To determine the poles, we set Vsig = (0)2 This results in the three separate circuits shown in Figure. Each of the
three circuits can be used to determine the resistance “seen” by the particular capacitor, and hence the time constant
associated with this capacitor. The corresponding pole frequency ωP is the inverse of the time constant.
Selecting Values for the Coupling and Bypass Capacitors
 We now address the design issue of selecting appropriate values for CC1, CS, and CC2.

 The design objective is to place the lower 3-dB frequency fL at a specified value while
minimizing the capacitor values.

 Since the resistance seen by CS, {1/gm ||RS }, is usually the smallest of the three resistances,
the total capacitance is minimized by selecting CS to provide the highest frequency pole; that
is, making its pole frequency fP2 = fL.

 We then decide on the location of the other two pole frequencies, say, 5 to 10 times lower than
the frequency of the dominant pole, fP2 .

 Nevertheless, the values selected for fP1 and fP3 should not be too low, for that would require
larger values for CC1, and CC2 than may be necessary. The design procedure will be illustrated
by an example.
Formulas for Example

1
gm  1
 p1 
p2 
Cs
Rs

Cc1 RG  Rsig 

1 1
 p3  z 
Cc 2 RD  RL  C s Rs
Example
We wish to select appropriate values for the coupling capacitors CC1 and CC2 and the bypass
capacitor CS for a CS amplifier for which RG = 4.7 MΩ, RD = RL = 15 k Ω, Rsig = 100 k Ω, RS =
10 k Ω, and gm = 1 mA/V. It is required to have fL at 100 Hz and that the nearest break frequency
be at least a decade lower.

Homework: The CE Amplifier


Internal Capacitive Effects and the High-Frequency Model of the MOSFET

A cross section of the n-channel MOSFET operating in the saturation region. The four internal capacitances, Cgs,
Cgd , Csb, and Cdb, are indicated.
Note: The bias voltages are not shown. Also not shown, to keep the diagram simple, is the depletion region.
Internal Capacitive Effects and the High-Frequency Model of the MOSFET

The depletion-layer capacitances of the two reverse-biased pn


junctions formed between each of the source and the drain
diffusions and the p-type substrate (body) can be determined
using the formula
where Csb0 is the value of Csb at zero
body-source bias, VSB is the magnitude of
the reverse-bias voltage, and V0 is the
Typically, Lov = 0.05 to 0.1L.
junction built-in voltage (0.6 V to 0.8 V)

https://www.youtube.com/watch?v=6VO7zLIHqPI
Example
High-Frequency MOSFET Model
Figure shows the small-signal model of the MOSFET, including the four capacitances Cgs, Cgd , Csb, and Cdb.
High-Frequency MOSFET Model
when the source is connected to the body, the model simplifies considerably, as shown in Figure below.

In this model, Cgd , although small, plays a significant role in determining the high-frequency response of
amplifiers. Capacitance Cdb, on the other hand, can usually be neglected, resulting in significant simplification of
manual analysis. The resulting circuit is shown in Figure.
High-Frequency MOSFET Model
Finally, we show in Figure below the high-frequency T model in its simplified form
The MOSFET Unity-Gain Frequency (fT)
A figure of merit for the high-frequency operation of the MOSFET as an amplifier is the unity-gain frequency, fT ,
also known as the transition frequency, which gives rise to the subscript T. This is defined as the frequency at
which the short-circuit current gain of the common-source configuration becomes unity. Figure shows the
MOSFET hybrid-π model with the source as the common terminal between the input and output ports. To
determine the short-circuit current gain, the input is fed with a current-source signal Ii and the output terminals are
short-circuited. It can be seen that the current in the short circuit is given by
The MOSFET Unity-Gain Frequency (fT)

Recalling that Cgd is small, at the frequencies of interest we can neglect the second term in this equation,

Since fT is proportional to gm, which


determines the midband gain, and
From Figure, we can express Vgs in terms of the input current Ii as
inversely proportional to the MOSFET
internal capacitances, which limit the
it becomes unity at the frequency amplifier bandwidth, the higher the
value of fT , the more effective the
Combining the above two equations MOSFET becomes as an amplifier.

For physical frequencies s = jω, it can be seen that the magnitude of the current gain is
High-Frequency MOSFET Model
Finally, we show in Figure below the high-frequency T model in its simplified form

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