Analog Electronics

Lecture 6
Zener Diode- Types of Diodes

Assoc. Prof. Roaa Mubarak

Zener Diode
• As we said before the P-N junction diode has a breakdown region when it
reverse biased, In this case the current pass through diode is too high that
burn the diode.
 Avalanche Breakdown
• When diode is in a reverse-biased at certain voltage called Vz the depletion
region is falls down and an energy acquires from the applied potential to the free
carriers make this carriers collides with crystal ion and destroy the covalent bonds
and makes new electron-hole pair generated and this new carriers also pick up
sufficient energy from the applied voltage and collide with another crystal ion
and also break the covalent bond and also release another free electron and free
hole ….etc.

• This produce a huge no. of free carriers make a large current that burn the diode
and makes it breakdown.

• This cumulative process of producing free carriers called “Avalanche

multiplication” makes breakdown called “ Avalanche breakdown”.
• Zener diode is a special type of diode designed to reliably allow current
to flow "backwards" when a certain set reverse voltage, known as
the Zener voltage, is reached.
Models of Zener diode

• Ideal Zener diode model

• Practical Zener diode model
Ideal Zener diode model

𝑽𝒛 𝐼𝐷 > 0 + 𝑽𝑫
𝐼𝐷 = 0 + 𝑽𝑫 −
−

Regulator Reverse biased Forward biased

𝑉𝐷 = - 𝑉𝑧 𝑉𝐷 < 0 , 𝐼𝐷 = 0 𝑉𝐷 = 0 , 𝐼𝐷 > 0
Open Circuit Short Circuit
OFF ON
Example 1
Assume Zener diode Ideal Vz =30, find I in Zener diode ?
Solution: 2KΩ

50V > Vz = 30 So, Zener is a regulator.

50−30
I= = 10 𝑚𝐴 2KΩ 50V
2𝑘

50V 30V
Example 2
Assume Zener diode Ideal Vz =30V, Vs = 40-60V. Find Imax & Imin in Zener diode
Solution: 2KΩ
40-60 V > Vz = 30 So, Zener is a regulator.
40−30
Imin = = 5 𝑚𝐴 2KΩ 40-60V
2𝑘
Imin
40V 30V

60−30
Imax = = 15 𝑚𝐴 2KΩ
2𝑘 Imax
60V 30V
Practical Zener diode model

𝑉Ɣ 𝑅𝐹
𝑉𝑧 𝑟𝑧
Forward biased
𝐼𝐷 = 0 + 𝑽𝑫
Regulator −
𝑉Ɣ = 0.7v Si
𝑉𝑧 = DC value 𝑅𝐹 = 5 50Ω
𝑟𝑧 = 5 50Ω
Reverse biased
ON
𝑉𝐷 < 0 , 𝐼𝐷 = 0
Open Circuit
OFF
Example 3
For the following circuit Vz =30V, rz=20Ω, Vs > Vz, Imax =2mA & Imin =1mA in
Zener diode. Find Vo. 2KΩ

Solution: +

At Imin =1mA
Vo
Vo= 30 + 1mA(20) = 30.02V 2KΩ
+

30V -
At Imax =2mA Vo
20Ω
Vo= 30 + 2mA(20) = 30.04V
-
Types of Diodes and Their uses
1- PN Junction Diode:
It is used to allow current to flow in one direction, while blocking current flow
in the opposite direction.
Applications:
Rectifier- Clipper- Clamper

2- Zener Diode:
It is a special type of diode designed to reliably allow current to flow "backwards"
when a certain set reverse voltage, known as the Zener voltage, is reached.
Applications:
Voltage Regulator
3- Light Emitting Diode “LED”:
The theory in LED is simple, we have 2 sides: n-side “ having free electrons” and p-
side “ having free holes”, the orbit of a free electron is larger than orbit of a hole.
A free electron is at higher energy level than a hole, because of this after free
electrons cross the junction they radiate energy when they fall into holes, this
energy comes off as heat and light.
Material:
Materials used in fabrication must to be semitransparent material, Si & Ge are
opaque so, none of light escapes.
GaAs “ Gallium Arsenide” → Infrared radiation ( invisible)
GaAsP “ Gallium- Arsenide-Phosphide” → Red or yellow light
GaP “ Gallium Phosphide” → Red or green light
Advantages of LED:
1- Long life (more than 20 years)
2- low voltage (1 : 2 V)
3- Fast on-off switching ( nanoseconds)

Applications:
- Seven Segments
- Low thickness T.V
4- Photodiode
While LEDs emit light, photodiodes are sensitive to received light.
They are constructed so, their P-N junction can be exposed to the
outside through a clear window or lens.
A photodiode is optimized for its sensitivity to light. In this diode, glass
window lets photons pass, the incoming photons create free electrons
and holes which is the no. of minority carrier because the reverse bias
is the normal way to operate a photodiode.
Applications:
CD players
Solar cells
5- Schottky Barrier Diodes
• This diode has a junction formed by a metal and extrinsic
semiconductors, because of differences in carrier concentrations in
two materials, a potential barrier exists.
• When Aluminum-Silicon junction is formed it called Schottky diode.
• Differences between junction diode & Schottky:
- Vɣ is lower in Schottky.
- Is reverse current is higher.
Advantages of Schottky:
It switches faster than junction diodes “ switching means switches
from ON to OFF and visa versa”

Applications:
Because it switches faster it used in digital circuit applications such as
computers because it switched On & Off so quickly.
6- Tunnel Diode
The tunnel diodes are normal P-N junction diode but with heavily
doping concentration makes a very thin depletion region and this
changes the characteristics of P-N junction diode. The width of
depletion region of 10nm.
Material:
Most common tunnel diodes are made from Germanium or gallium
arsenide, Tunnel diode is difficult to manufacture with Silicon.

Applications:
1- very high speed switching ( speed of light), because of the thickness
of depletion region.
2- It is as a high frequency oscillator.
Oscillator:
Electronic circuit produces a repetitive oscillating electronic signal “ sine
wave or square wave” Oscillator convert DC signal from power supply to
Ac signal.
Example of oscillator signal in broadcast “radio and T.V. signals”