DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING

Lab Report 08

Lab Title CHARACTERISTICS OF BJT

Student Name: RegNo:

Objective: 1. To determine transistor type (npn, pnp), terminals, and material by

using a digital multimeter (DMM).
2. To observe the output characteristics for BJT by plotting a graph between Vc and
Ic.
3. To study the behavior of transistor as a switch.

LAB ASSESSMENT:

Excellent Good Average Satisfactory Unsatisfactory

Attributes
(5) (4) (3) (2) (1)
AbilitytoConduct
Experiment
Abilitytoassimilatethe
results
Effective use of lab
equipmentandfollows
thelab safety rules

Total Marks: Obtained Marks:

LAB REPORT ASSESSMENT:

Excellent Good Average Satisfactory Unsatisfactory
Attributes
(5) (4) (3) (2) (1)

Data presentation

Experimental results

Conclusion

Total Marks: Obtained Marks:

Date: 29-11-2024 Signature:

 LABORATORY
EXPERIMENT
NO. 8

CHARACTERISTICS OF BJT

OBJECTIVE
1. To determine transistor type (npn, pnp), terminals, and material by using a digital
multimeter (DMM).
2. To observe the output characteristics for BJT by plotting a graph between Vc
and Ic.
3. To study the behavior of transistor as a switch.

DISCUSSION
Bipolar Junction Transistor (BJT):
A Bipolar Junction Transistor (also known as a BJT or BJT Transistor) is a three-terminal
semiconductor device consisting of two p-n junctions which are able to amplify or magnify a
signal. It is a current controlled device. The three terminals of the BJT are the base, the
collector and the emitter. A BJT is a type of transistor that uses both electrons and holes as
charge carriers.
A signal of small amplitude if applied to the base is available in the amplified form at the
collector of the transistor. This is the amplification provided by the BJT. Note that it does
require an external source of DC power supply to carry out the amplification process.
Bipolar transistors are made of either Silicon (Si) or Germanium (Ge). Their structure consists
of two layers of n-type material separated by a layer of p-type material (npn), or of two layers
of p-material separated by a layer of n-material (pnp). In either case, the center layer forms
the base of the transistor, while the external layers form the collector and the emitter of the
transistor. It is this structure that determines the polarities of any voltages applied and the
direction of the electron or conventional current flow. The arrow at the emitter terminal of the
transistor symbol for either type of transistor points in the direction of conventional current
flow. One part of this experiment will demonstrate how you can determine the type of
transistor, its material, and identify its three terminals.
The relationships between the voltages and the currents associated with a bipolar junction
transistor under various operating conditions determine its performance. These relationships
are collectively known as the characteristics of the transistor. As such, they are published by
the manufacturer of a given transistor in a specification sheet.
There are two types of bipolar junction transistors – NPN transistors and PNP transistors. A
diagram of these two types of bipolar junction transistors is given below.
From the above figure, we can see that every BJT has three parts named emitter, base and
collector. JE and JC represent the junction of emitter and junction of collector respectively.

NPN Bipolar Junction Transistor:

NPN is one of the two types of bipolar transistors, in which the letters "N" and "P" refer to the
majority charge carriers inside the different regions of the transistor. Most bipolar transistors
used today are NPN, because electron mobility is higher than hole mobility in
semiconductors, allowing greater currents and faster operation.
NPN transistors consist of a layer of P-doped semiconductor (the "base") between two N-
doped layers. A small current entering the base in common-emitter mode is amplified in the
collector output. In other terms, an NPN transistor is "on" when its base is pulled high relative
to the emitter. The arrow in the NPN transistor symbol is on the emitter leg and points in the
direction of the conventional current flow when the device is in forward active mode.

NPN BJT structure creates two p-n junctions. The junction between the n-type collector and
the p-type base is called the Collector-Base Junction (CBJ). Note for the CBJ, the anode ithe
base, and the cathode is the collector. However, the junction between the n-type emitter and
the p-type base is called the Emitter-Base Junction (EBJ). Note for the EBJ, the anode is the
base, and the cathode is the emitter.
PNP Bipolar Junction Transistor:

PNP transistors consist of a layer of N-doped semiconductor between two layers of P-doped
material. A small current leaving the base in common-emitter mode is amplified in the
collector output. In other terms, a PNP transistor is "on" when its base is pulled low relative to
the emitter. The arrow in the PNP transistor symbol is on the emitter leg and points in the
direction of the conventional current flow when the device is in forward active mode.

PNP BJT structure creates two p-n junctions. For the pnp BJT, the anode of the CBJ is the
collector, and the cathode of the CBJ is the base. Likewise, the anode of the EBJ is the
emitter, and the cathode of the EBJ is the base.

Modes of Operation of BJT:

The transistor can be operated in three modes:
∙ Cut-off mode
∙ Saturation mode
∙ Active mode

In order to operate transistor in one of these regions, we have to supply dc voltage to the npn
or pnp transistor. Based on the polarity of the applied dc voltage, the transistor operates in
any one of these regions. Applying dc voltage to the transistor is nothing but the biasing of
transistor.
Cutoff mode:

In the cutoff mode, both the junctions of the transistor (emitter to base and collector to base)
are reverse biased. In other words, if we assume two p-n junctions as two p-n junction diodes,
both the diodes are reverse biased in cutoff mode. We know that in reverse bias condition, no
current flows through the device.
Hence, no current flows through the transistor. Therefore, the transistor is in off state and acts
like an open switch. The cutoff mode of the transistor is used in switching operation for switch
OFF application.
Saturation mode:
In the saturation mode, both the junctions of the transistor (emitter to base and collector to
base) are forward biased. In other words, if we assume two p-n junctions as two p-n junction
diodes, both the diodes are forward biased in saturation mode. We know that in forward bias
condition, current flows through the device. Hence, electric current flows through the
transistor.

In saturation mode, free electrons (charge carriers) flows from emitter to base as well as from
collector to base. As a result, a huge current will flow to the base of transistor.
Therefore, the transistor in saturation mode will be in on state and acts like a closed switch.
The saturation mode of the transistor is used in switching operation for switch ON application.
From the above discussion, we can say that by operating the transistor in saturation and cutoff
region, we can use the transistor as an ON/OFF switch.

Active mode:
In the active mode, one junction (emitter to base) is forward biased and another junction
(collector to base) is reverse biased. In other words, if we assume two p-n junctions as two p-
n junction diodes, one diode will be forward biased and another diode will be reverse biased.
The active mode of operation is used for the amplification of current.
From the above discussion, we can say that the transistor works as an ON/OFF switch in
saturation and cutoff modes whereas it works as an amplifier of current in active mode.

BJT as a Switch:
The operation of a BJT as a switching device is really easy to understand especially if you
have already learned how to make a BJT operate in the cutoff and saturation region. A BJT
acts like an open switch when it operates in the cutoff region. In figure, you can see that the
npn BJT is operating in the cutoff region since the voltage at the base terminal is 0V.
Therefore, the base-emitter junction is not forward-biased and if we will not consider the
leakage current, all of the currents, IB and IC are zero. You can also see in figure below that
the collector and emitter terminals act like an open SPST switch. Since I C is zero, the voltage
across the collector and emitter terminal, VCE(cutoff), is equal to VCC.

An npn BJT operating in the cutoff region acts like an open switch
So for a BJT to act as an open switch, all you need to do is to make sure that its base-emitter junction is not
forward-biased. Now, for a BJT to act as a closed switch, it needs to operate in the saturation region. In figure
below, we’ve assumed that the npn BJT is operating in the saturation region. As you can see, the collector and
emitter terminals act like a closed SPST switch. Ideally, there’s basically a short between the collector and
emitter and the voltage drop across it should be zero. However, in reality, there is a small voltage drop across the
collector and emitter terminals which is known as the saturation voltage, V .
CE(sat)
 An npn BJT operating in the saturation region acts like a closed switch
For a BJT to operate in the saturation region, the base-emitter junction and base-collector
junction should be forward-biased, and there should be a sufficient base current to produce
the collector saturation current, IC(sat). Using the circuit in above figure, the formula to calculate
the IC(sat) is:

IC(sat) is the current that the load RC requires. VCE(sat) is specified in the datasheet of the BJT that
you are going to use. After calculating IC(sat), the next thing to figure out is the minimum base
current, IB(min), needed to make sure to produce IC(sat). You can use this equation to calculate
IB(min).

To make sure that the BJT is operating in the saturation region, you just need to make sure
that IB is greater than IB(min).

LAB TASK 1
Determination of Transistor’s Type, Terminals and Material:
The following procedure will determine the type, terminals and material of a transistor.
The procedure will utilize the diode testing scale found on multimeters.
a. Label the transistor terminals of below figure as 1, 2 and 3. Use the transistor without
terminal identification for this part of the experiment.
b. Set the selector switch of the multimeter to the diode scale.
c. Connect the positive lead of meter to terminal 1 and the negative lead to terminal 2.
Record the reading the Table.
Meter leads connected to BJT Diode check reading

step Positive Negative (or highest resistance

range)

C 1 2 0.7V

D 2 1 Open, no conduction

E 1 3 0.7V

F 3 1 Open, no conduction

G 2 3 Open, no conduction

H 3 2 Open, no conduction

d. Reverse the leads and record your reading.

e. Connect the positive lead to terminal 1 and the negative lead to terminal 3. Record
the reading.
f. Reverse the lead and record the reading.
g. Connect the positive lead to terminal 2 and the negative lead to terminal 3. Record
your reading. h. Reverse the leads and record your reading.
i. The meter readings between two of the terminals will read high regardless of the
polarity of the meter leads connected. Neither of these two terminals will be the
base. Based on the above calculations, record the number of the base terminal in
the table below.

Base Terminal Terminal 1

Transistor type NPN
 Collector Terminal Terminal 3
Emitter Terminal Terminal 2
Transistor material Silicon

j. Connect the negative lead to the base terminal and the positive lead to either of the
other terminals. If the meter reading is low (approximately 0.7 V for Si and 0.3 V for
Ge), the transistor type is pnp. If the reading is high, the transistor type is npn.
k. (1) For pnp Type: Connect the negative lead to the base terminal and the positive
lead alternatively to either of the other two terminals. The lower of the two
readings obtained indicates that it is the collector terminal. Thus, the other terminal
is the emitter. Record the terminals in the above table.
(2) For npn Type: Connect the positive lead to the base terminal and the negative lead
alternatively to either of the other two terminals. The lower of the two readings
obtained indicates that it is the collector terminal. Thus, the other terminal is the
emitter. Record the terminals in the above table.
If the readings in either (1) or (2) of (k) were approximately 700mV, the transistor
material is Silicon. If the readings were approximately 300mV, the material is
germanium.
Identify the Type, Terminals, and Material of the Transistor by following the above
mentioned steps and enter the results below.

RESULTS:-

Type of Transistor: NPN

Terminals of Transistor: Base: Terminal 1, Collector: Terminal 3, Emitter: Terminal 2

Material of Transistor: Silicon

LAB TASK 2
1) Connect the circuit as shown in fig. All the knobs of the power supply must be at the
minimum position before the supply is switched on.
2) Adjust the base current IB to 20 µA by adjusting the supply VBB.
3) Vary the supply voltage VCC so that the voltage VCE varies in steps of 0.2 V from 0 to 2 V
and then in steps of 1 V from 2 to 10 V. In each step the base current should be adjusted to
the present value and the collector current IC should be recorded.
4) Adjust the base current at 40, 60 µA and repeat step-3 for each value of IB.
5) Plot a graph between the output voltage VCE and output current IC for different values of the
input current IB. These curves are called the output characteristics. Determine the Q-point of
the transistor.

RESULT:-
PROTEUS SIMULATION:-
TABLE:-
IB=20(μA) IB=40(μA) IB=60(μA)

VCE(V) Ic(mA) VCE(V) Ic(mA) VCE(V) Ic(mA)

0.2 0.15 0.2 0.30 0.2 0.45

0.4 0.30 0.4 0.60 0.4 0.90

0.6 0.45 0.6 0.90 0.6 1.35

LAB TASK 3
Transistor as a switch:
Connect the circuit given below. Record the readings in the table.

0 IB IC VC

0V 0 0 5.0V

5V 0.5 4.8 0.2

RESULTS :-
PROTEUS SIMULATION :-

CONCLUSION
 This experiment demonstrated the key characteristics and functionality of BJTs. We
identified the transistor type (NPN/PNP), terminals, and material (Silicon/Germanium)
using a multimeter. Output characteristics showed the relationship between IB, IC and
VCE, validating the transistor's amplification and switching behavior. The transistor
operated as a switch in cutoff and saturation modes, while the active mode enabled
current amplification. Silicon NPN BJTs proved more efficient due to better electron
mobility. Overall, the experiment highlighted the versatility of BJTs in amplification and
switching applications.