Diode Switching Times

While changing the bias conditions, the diode undergoes a transient response. The
response of a system to any sudden change from an equilibrium position is called as transient
response.

The sudden change from forward to reverse and from reverse to forward bias, affects the
circuit. The time taken to respond to such sudden changes is the important criterion to define
the effectiveness of an electrical switch.

 The time taken before the diode recovers its steady state is called as Recovery Time.
 The time interval taken by the diode to switch from reverse biased state to forward
biased state is called as Forward Recovery Time.(tfr)
 The time interval taken by the diode to switch from forward biased state to reverse
biased state is called as Reverse Recovery Time. (tfr)

To understand this more clearly, let us try to analyze what happens once the voltage is
applied to a switching PN diode.

Carrier Concentration

Minority charge carrier concentration reduces exponentially as seen away from the junction.
When the voltage is applied, due to the forward biased condition, the majority carriers of one
side move towards the other. They become minority carriers of the other side. This
concentration will be more at the junction.

For example, if N-type is considered, the excess of holes that enter into N-type after applying
forward bias, adds to the already present minority carriers of N-type material.

Let us consider few notations.

 The majority carriers in P-type (holes) = Ppo

 The majority carriers in N-type (electrons) = Nno
 The minority carriers in P-type (electrons) = Npo
 The majority carriers in N-type (holes) = Pno

During Forward biased Condition − The minority carriers are more near junction and less
far away from the junction. The graph below explains this.
Excess minority carrier charge in P-type = Pn−Pno with pno (steady state value)

Excess minority carrier charge in N-type = Np−Npo with Npo (steady state value)

During reverse bias condition − Majority carriers doesn’t conduct the current through the
junction and hence don’t participate in current condition. The switching diode behaves as a
short circuited for an instance in reverse direction.

The minority carriers will cross the junction and conduct the current, which is called
as Reverse Saturation Current. The following graph represents the condition during
reverse bias.

In the above figure, the dotted line represents equilibrium values and solid lines represent
actual values. As the current due to minority charge carriers is large enough to conduct, the
circuit will be ON until this excess charge is removed.

The time required for the diode to change from forward bias to reverse bias is called Reverse
recovery time (trr). The following graphs explain the diode switching times in detail.
From the above figure, let us consider the diode current graph.

At t1 the diode is suddenly brought to OFF state from ON state; it is known as Storage
time. Storage time is the time required to remove the excess minority carrier charge. The
negative current flowing from N to P type material is of a considerable amount during the
Storage time. This negative current is,

−IR=−VRR

The next time period is the transition time” (from t2 to t3)

Transition time is the time taken for the diode to get completely to open circuit condition.
After t3 diode will be in steady state reverse bias condition. Before t1 diode is under steady
state forward bias condition.

So, the time taken to get completely to open circuit condition is

( ) ( )
Reverserecoverytime trr =Storagetime Ts +Transitiontime Tt ( )
Whereas to get to ON condition from OFF, it takes less time called as Forward recovery
time. Reverse recovery time is greater than Forward recovery time. A diode works as a better
switch if this Reverse recovery time is made less.

Definitions

Let us just go through the definitions of the time periods discussed.

 Storage time − The time period for which the diode remains in the conduction state
even in the reverse biased state, is called as Storage time.
 Transition time − The time elapsed in returning back to the state of non-conduction,
i.e. steady state reverse bias, is called Transition time.
 Reverse recovery time − The time required for the diode to change from forward
bias to reverse bias is called as Reverse recovery time.
 Forward recovery time − The time required for the diode to change from reverse
bias to forward bias is called as Forward recovery time.

Factors that affect diode switching times

There are few factors that affect the diode switching times, such as

 Diode Capacitance − The PN junction capacitance changes depending upon the bias
conditions.
 Diode Resistance − The resistance offered by the diode to change its state.
 Doping Concentration − The level of doping of the diode, affects the diode
switching times.
 Depletion Width − The narrower the width of the depletion layer, the faster the
switching will be. A Zener diode has narrow depletion region than an avalanche diode,
which makes the former a better switch.

Applications

There are many applications in which diode switching circuits are used, such as −

 High speed rectifying circuits

 High speed switching circuits
 RF receivers
 General purpose applications
 Consumer applications
 Automotive applications
 Telecom applications etc.