AO4882

40V Dual N-Channel MOSFET

General Description Product Summary

The AO4882 uses advanced trench technology to provide VDS 40V

excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8A
purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) < 19mΩ
power conversion applications.
RDS(ON) (at VGS=4.5V) < 27mΩ

100% UIS Tested

100% Rg Tested

SOIC-8
D1 D2
Top View Bottom View
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G1 G2

S1 S2

Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 8
ID
Current TA=70°C 6 A
C
Pulsed Drain Current IDM 40
Avalanche Current C IAS 15 A
Avalanche energy L=0.1mH C EAS 11 mJ
TA=25°C 2
Power Dissipation B PD W
TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

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 AO4882

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.9 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 40 A
VGS=10V, ID=8A 15.4 19
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 22.5 29
VGS=4.5V, ID=4A 21 27 mΩ
gFS Forward Transconductance VDS=5V, ID=8A 33 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 415 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 112 pF
Crss Reverse Transfer Capacitance 11 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2.2 3.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 6.5 12 nC
Qg(4.5V) Total Gate Charge 3 6 nC
VGS=10V, VDS=20V, ID=8A
Qgs Gate Source Charge 1.2 nC
Qgd Gate Drain Charge 1.1 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=2.5Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15 ns
tf Turn-Off Fall Time 2 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 12.5 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4882

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V VDS=5V
4.5V
25
15
20 3.5V
ID (A)

ID(A)
15 10 125°C

10
3V
5 25°C
5
VGS=2.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

50 1.8

Normalized On-Resistance
40 1.6 VGS=10V
ID=8A
Ω)
RDS(ON) (mΩ

30 VGS=4.5V 1.4
17
5
20 1.2 2
VGS=4.5V10
10 1 ID=4A
VGS=10V

0 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

60 1.0E+02
ID=8A
50 1.0E+01
40
1.0E+00
40
Ω)
RDS(ON) (mΩ

125°C 1.0E-01 125°C

IS (A)

30
1.0E-02
20
1.0E-03 25°C

10 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4882

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDS=20V
ID=8A
500
8 Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss

2
100
Crss

0 0
0 2 4 6 8 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000

RDS(ON) TA=25°C
10.0 limited 1000
10µs
ID (Amps)

100µ
Power (W)

1.0
1ms 100
10ms
TJ(Max)=150°C
0.1
TA=25°C
10s 10
DC
0.0
0.01 0.1 1 10 100 1
VDS (Volts)
0.00001 0.001 0.1 10 1000
Figure 10: Maximum Forward Biased Pulse Width (s)
Safe Operating Area (Note F) Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=90°C/W
Thermal Resistance

0.1

0.01 PD
Single Pulse

Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4882

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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