Cadence Tutorial
Cadence Tutorial
This tutorial has been adapted from EE5323 offered in Fall 2007, 2008, 2009 and 2010. Thanks to Jie Gu, Prof. Kia Bazargan, Prof. Chris Kim, Dong Jiao, Satish Sivaswamy and Ayan Paul of University of Minnesota for creating & updating this tutorial. Thanks are also due to NCSU wiki for parts of the layout section.
Setting up your Account Example: Design and Simulation of an Inverter o Create a library for your design o Create a new cell o Design your circuit Place Components Connect Components o Add Pins o Generate Netlist o HSPICE simulation o Use scope to view results o Working with Symbols Create a new symbol Use the symbol in other schematics o Layout of the Inverter Create Layout view of inverter Layout components of your circuit Laying out an NMOS transistor Layout of inverter Performing DRC of the inverter Viewing and correcting errors in DRC Create pins Performing LVS check of the inverter Extract parasitics o Layout Tips More Information
1.3 You should now be able to see a directory called FreePDK45 in your home directory. This directory contains an open-source, Open-Acess based PDK for the 45nm technology node and the predictive technology model which you will be using throughout this course. 1.4 Go to ~/FreePDK45/ncsu_basekit/cdssetup
cd ~/FreePDK45/ncsu_basekit/cdssetup
Here, you will have to modify 2 files - cds.lib and setup.csh using vi, nano or any of your favorite editors as follows: 1.5 Add the following line at the end of your cds.lib
DEFINE freepdk_cells $PDK_DIR/osu_soc/lib/freepdk45_cells
1.8 Copy setup.csh(the file you modified in step 1.6) into this directory
cp ~/FreePDK45/ncsu_basekit/cdssetup/setup.csh .
1.8 Invoke Cadence by typing virtuoso & or icfb &. This should bring up the command interface window and library manager. You are now ready to design circuits in Cadence.
Most of the commands in Cadence can be accessed in multiple ways: pull-down menus, shortcut keys, buttons in toolbars, etc. In the described example, all the commands are referenced by their position in the pull-down menus. The shortcut keys can be found from the pull-down menus as well. Below lists some most frequently used shortcut keys:
q Edit property of object i Create instance w Add wires m Move c Copy s Stretch r Rotate k Create a ruler z Zoom in Z Zoom out u Undo X Descend edit x Descend read b Return e Display M Merge multiple shapes into a single piece Ctrl+F Hierarchical layout view (hide details of sub-instances) Shift+F Descended layout view (show details of sub-instances)
The most frequently used key in Cadence is ESC. It is used to cancel on-going commands.
The following picture shows the schematic of an inverter, which is ready for netlist extraction. The following section explains how to draw it in Cadence.
From Virtuoso,
File->New->Library Type a new name(I used "sample" and this is what I will refer to from here on). Select the "Attach to an existing technology library" option, click OK. Then in the popup window, select NCSU_TechLib_FreePDK45 and click OK
In Virtuoso command window, you will see the following messages (among other warnings) if everything is OK
Created library "sample" as "/home/class/your_user_name/cds_freepdk/sample" Design library 'sample' successfully attacjed to technology library 'NCSU_TechLib_FreePDK45'
Remember that anytime you get an Upgrade license warning, select the "Always/Yes" option everytime.
Make sure the Library in the library browser is set to NCSU_Devices_FreePDK45. Use the library browser window and click on NMOS_VTL, then select the symbol view. You can now enter the width and length of the transistor in the Add Instance window. Use the same procedure for PMOS transistors. Also, from the library Basic, you can get the symbols for VDD and GND (they define the net names for the power and ground nodes) If you make any mistake, you can always use Edit->Delete or Edit->Rotate or Edit->Move or Edit->Stretch To change the properties of some of the components: Edit->Properties->Objects Select the NMOS_VTL transistor and make sure the width and
length are set to 90.0n M and 50.0n M respectively. If not, you can change the properties of the transistor. Similarly, set the width and length of the PMOS_VTL transistor to 180.0n M and 50.0n M.
A new window will pop up showing the generated HSPICE netlist. You may save this file by clicking the menu bar: File->Save As Specify the full path name and file name in the Save As window. For example, if we want save the file into a folder named "simulation" under folder "~/cds_ncsu", we should type in "~/cds_ncsu/simulation/inverter.sp". And the file name is "inverter.sp". If you do not provide a path before file name, the file will be saved under the folder where you start your Cadence.
Now we have the netlist ready for editing and simulating. Open the netlist in an editor and comment out the lines that are highlighted in the above picture. You can comment lines in a SPICE netlist by using *. Save the netlist and exit the editor. Create another SPICE file named "runinv.sp" as below for simulation. It should contain the part of the SPICE file inverter.sp that you commented out in the previous step. You also need to include the models for the transistors and the generated netlist file "inverter.sp". . Finally you provide the values for the input and VDD.
**Test inverter .TEMP 110 **Use high temperature to simulate worst case delay and leakage power .OPTION + + + + + ARTIST=2 INGOLD=2 MEASOUT=1 PARHIER=LOCAL PSF=2
POST
v1 vdd! 0 1.1v v2 vin 0 pwl 0ns 0 1ns 0 1.02ns 1.1V 2ns 1.1V 2.02ns 0 2.5ns 0 .op .tran 0.1p 3ns .end
Save the file runinv.sp and Exit the editor. The reason for using a separate file for simulation is because later on your circuit netlist may change, but the simulation file can be kept the same. Note that you should always leave the first line of your .sp file for comments since HSPICE automatically ignores it. Note: Make sure your file contains the line "+ POST" as the generated netlist does include it. If you miss it, probably you will not be able to open your .tr file.
If you have followed all the steps correctly, you will see the following message:
Using: /usr/bin/time -p /home/vlsilab/synopsys/hspice/linux/hspice runinv.sp ****** HSPICE -- C-2009.09-SP1 32-BIT (Nov 23 2009) linux ****** Copyright (C) 2009 Synopsys, Inc. All Rights Reserved. ... ... ... ***** job concluded
1****** HSPICE -- C-2009.09-SP1 32-BIT (Nov 23 2009) linux ****** ****** **test inverter ** test inverter ... ... ... lic: Release hspice token(s)
The important message is the job concluded. If the job is aborted, you will have to debug the errors in your netlist. For detailed HSPICE command and syntax, the readers are referred to the HSPICE manual on the class webpage.
In the results browser window, double click "v(vin)" and "v(vout)" to plot the waveforms of the signals.
You can measure the propagation delay by 1) Drag the v(vout) signal into the same window as v(vin) signal; 2) Select both "vin" and "vout" signals using control key; 3) Click the second but last button on the tool bar; 4) Drag the start and end circles to the location you want to measure;
You can also use HSPICE command to measure any desired parameters, e.g., clock period, propagation delay, etc. Here gives an example to measure the propagation delay: .MEASURE TRAN thl TRIG V(vin) VAL=0.55 TD=10n RISE=5 TARG V(vout) VAL=0.55 TD=10n FALL=5 Here, "TRAN" indicates we want to measure from transient simulations, "thl" is the variable name which will store the measured result, "TRIG" indicates the triggering event, which is defined as "V(vin) VAL=0.55 TD=10n RISE=5", meaning the 5th rising edge (RISE=5) of vin (V(vin)) after 10ns (TD=10n) when it reaches 0.55V (VAL=0.55). Similarly, "TARG V(vout) VAL=0.55 TD=10n FALL=5" represents the 5th falling edge of vout after 10ns when it reaches 0.55V. The delay between these two events will be saved in the variable "thl". If .measure runs correctly, it will generate a separate file containing the measured results. For example, if you are using runinv.sp, the generated file will be runinv.mt0. For more details of ".measure", please refer to the HSPICE manual.
In the Virtuoso command window, Click on File->New->Cell View. In that select the library you created in the schematic design entry example. In the Type field, select "layout". The Open with application should be automatically set to "Layout L". Click on Ok. Click "Always/Yes if there is any license upgrade message". A Layout editing and a LSW(Layer Selection Window) will open up. You are now ready to layout the inverter you designed earlier.
You can draw a shape by first selecting the layer from the LSW, then Create->shape->.... You will be drawing rectangles for the most part. Note that this is similar to how you created symbols in Section 1.8.
In this section, you will learn how to layout an NMOS transistor in this process. Before going into detail about the layout, it is recommended that open up the design rules of the process in another browser window. You can get the design rules of the FreePDK45 process from here. You will need to refer to the design rules later to fix errors in your layout. An NMOS transistor uses the following layers: pwell, active, nimplant, poly, metal1 & contact.. You can start designing the transistor by selecting "active" on the LSW and drawing a rectangle on the layout editor. Note also the letters "drw", "net", and "pin" next to each entry in the LSW. These are the purposes of a shape. The purpose is used to indicate special functionality of a shape. We will be using "drw" for now. At this point, do not worry about drawing the rectangle to exact dimensions and just draw a rectangle of any arbitrary dimension. You can zoom in and out of the editor by using the zoom buttons located on the top menubar of the editor. You can also draw a box around the area you want to zoom in by holding on to your right mouse click button. When you release the button, the area you selected will be zoomed in. Once you draw the rectangle, you can select it and press "q" or Edit->Basic->Properties to change the dimensions of the rectangle. You can also adjust the dimension by pressing "s" or Edit->Strech . You can move objects around by pressing "m" or Edit->move. Readers are strongly encouraged to get familiar with other keyboard shortcuts as this will reduce design time later on. To measure the distance between two points, you can press "k" or Tool->Creat Ruler. The default units are "user units" and are in microns. For our inverter, the NMOS transistor has a width of 90n M. So, make sure that the active layer that you have just now drawn is also 90n M in width. Then you repeat the same process but by selecting the "nimplant" layer from the LSW. The active and nimplant layers must overlap and these form the Source and Drain diffusion regions of the NMOS transistor you are trying to create. The following pictures illustrate these two steps.
The next step is to draw the gate of the transistor. This is done by selecting "poly" in the LSW and drawing another rectangle to form the gate. Make sure that the length of the gate is set to 50n M to create the transistor that we used for the schematic. Now, we have formed the channel and the source and drain diffusion regions. The next step is to draw a pwell outside the NMOS
transistor. Use the same procedure as described earlier to draw the pwell (Note that the minimum well enclosure of active is 0.055um as required by the DRC rules). The resulting transistor is shown in in the following picture .
We still have to create contacts for the source, drain and the body terminals of the transistor. This can be done by clicking on Create->Via or pressing "o" and then selecting "M1N" (for NMOS) or "M1P" (for PMOS). You can also create contacts to the active layer by selecting "contact" from the LSW and painting a rectange on the Active layer. Paint two contacts for the Source and Drain regions of the transistor (Note that the minimum spacing between poly and M1 is 0.035um as required by the DRC rules). Now you need to create a body terminal. To do this, click on Create->via or press "o". In the window that opens up, make sure that the Technology Library is set to NCSU_TechLib_FreePDK45 and select "PTAP" in the Via Definition field. Place the PTAP connection in contact with the pwell you have drawn. You can press Shift+F to reveal the details inside the PTAP connection. When you create an instance, you can specify the number of rows and columns, as well as the "Delta Y" and "Delta X", to create an array of the same instances. Array is highly preferred if you have a regular pattern repeating many times, e.g., an inverter chain, a long NTAP containing lots of body contacts, etc. The instance array can make your layout well organized and much cleaner. Draw metal1 rectangles over the contacts so that you can connect the terminals to other signals in your circuit. Your NMOS transistor is now ready. The final transistor should look like the following picture.
You can create the PMOS transistor similarly. It uses the following layers:nwell, active, pimplant, poly, metal1 & contact. Make sure the dimensions of the PMOS transistor match that used in the schematic.
So far, we have drawn rectangles to create transistors and connected them to form an inverter. We now need to verify that the layout has passed all the design rules of the process. To do this, first save the layout and then click on Calibre->Run DRC from the menu bar on the layout editor. The DRC form appears. Then click on Run DRC. You can ignore any warning messages you get. When CAlibre finishes the DRC, it opens up 3 windows: A Calibre results window, Calibre interactive (which is the main DRC form) and a DRC summary report. You can check whether you layout passed all design rules by looking at the Results window.
The presence of a red check mark in the DRC results window indicates that the layout failed the DRC check. The results window give information on what design rule was violated, where it was violated and how many instances have violated the rule. You can also double click the error number (e.g., "01" in this example) to jump to wherever the violation occurs. In the topmost level in the results window, it says "Cell Inverter - 1 Result". This means that there is one instance of a design rule being violated somewhere in the layout. Underneath that, it says "check Poly.6" 1 Result. This is the design rule being violated. In the message window below, it says that " Minimum spacing of field poly = 0.075". This means that somewhere in the design, we have 2 pieces of poly that are closer than 0.075 microns and this violates the design rule of the process. The following picture shows a zoomed in version of our poly connections.
You can observe that there is a small gap between the poly connecting the gates of the two transistors and the M1_Poly contact. This resulted in the layout failing the DRC check. You can fix this error by moving the M1_Poly to the right so that gets in contact with the poly connecting the gates. The following picture shows the results of the DRC when you fix this problem and re-run DRC.
Note that when you are working through this tutorial you may get other errors from DRC. You can get more information about design rules from the link posted earlier in this section or from the NCSU wiki page linked at the bottom of this page. The DRC results window will let you know what rules you have violated. So, in conjunction with the set of design rules in the wiki you can fix those errors.
below. Type the names vdd!, gnd!, in and out in the "Terminal Names" text box as shown below. Select "Display Pin Name". Leave all other options as they are
Next, click the "Display Pin Name Option..." button. You will see another dialog box appear.
Set the height to 0.05 um and the layer to metal-1 dg. Click OK. Next, click on layout where you want each pin to be placed. You will need to click three times: twice to create a rectangle for the pin and a third time to place the label. The shape of your rectange does not matter as long as it only covers area that is already covered by metal1-dg. Rerun DRC to make sure the layout passes all design rules.
Make sure you select the "Export from layout viewer" option under the Layout tab and "Export from schematic viewer" under the Netlist tab. Under the Outputs tab, set the svdb directory to
svdb_inverter. Then click on "Run LVS" button. If LVS runs sucessfully, then you will see the following window with a smilie.
Click on "Transcript" tab in Calibre Interactive - LVS to see the log file. The LVS report is also opened and is shown below.
The file shown in this window contains the intentionally designed devices only. The files with .pex and .pxi extensions are also included in inverter.pex.netlist (which can be found in your working directory, i.e., ~/cds_ncsu/ in this example).
The .pex file contains one subckt per net:each subckt containing the RC tree structure modeling the net. The .pxi file contains connections between the parasitic networks i.e. containing the instance calls to net model subckts along with coupling capacitors connecting between these net model instances.
Note: The netlist shown in the pop-up window needs to be modified for simulations. This is because the netlist shown above only defines your circuit (which is "inverter" in this example) as a subcircuit (you can see ".subckt" and ".ends"), but does not initialize a real instance. So if you run simulations on this netlist, you won't see any outputs. You can fix this problem by commenting out the two lines (the line ".subckt ***" and the corresponding ".ends") which define the subcircuit. It is OK if you do not understand the .pex and .pxi files. The top-level netlist file however, needs
to be understood. Once you have the extracted netlist, you can simulate it to see how it performs as opposed to the simulation results from the schematic. Refer to Section 1.6 for more information on simulation.
When you have multiple identical instances to add into the layout and these instances will be placed in a very regular pattern, e.g., a ring VCO with several idental inverters, you can add them together as an array to make your design cleaner. To be specific, when adding an instance, change the number of "Row" and "Column" in the pop-up window and adjust "deltaX" and "deltaY" to control the distance between the instances. When putting together your layout, place large metal rectangles along the both sides of the diagram as your VDD and GND rails. Try to place all of your layout within these rails. Also, when connecting to these (or any routing connection) it is almost always a good idea to put as many via connections as possible. You can use the same multiple contact placement to make this fast and neat. Though it's not really obvious from this example, it is also good practice to try and make your layout as symmetric as possible. When routing large layouts it's a good idea to try and keep track of what you are routing with. Route with poly as little as possible since its resistance is higher than metal. It also helps to set some general directions for different layers. For instance, for horizontal traces use metal2, 4, for vertical traces use metal3,5. Metal 1 can be used for both directions. This will help keep your layout neat and organized.
More Information
This tutorial is a watered down version of the more elaborate tutorial developed at NCSU. Interested readers are referred to NCSU FreePDK Wiki for more details.