APTGF90H60T

Full - Bridge VCES = 600V

NPT IGBT Power Module IC = 90A @ Tc = 80°C

Application
VBUS · Welding converters
· Switched Mode Power Supplies
Q1 Q3 · Uninterruptible Power Supplies
· Motor control
G1 G3
Features
· Non Punch Through (NPT) THUNDERBOLT IGBT®
E1 OUT1 OUT2 E3
- Low voltage drop
- Low tail current
Q2 Q4 - Switching frequency up to 100 kHz
- Soft recovery parallel diodes
G2 G4 - Low diode VF
- Low leakage current
E2
- Avalanche energy rated
E4
- RBSOA and SCSOA rated
NTC1 0/VBU S NTC2 · Kelvin emitter for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency
G3 G4 operation
OUT2
E3 E4 · Stable temperature behavior
· Very rugged
VBUS 0/VBUS
OUT1
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
E1 E2 NTC2
G1 G2 NTC1
easy PCB mounting
· Easy paralleling due to positive TC of VCEsat
· Low profile

Absolute maximum ratings

Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
Tc = 25°C 110
IC Continuous Collector Current
Tc = 80°C 90 A
ICM Pulsed Collector Current Tc = 25°C 315
APTGF90H60T – Rev 1 March, 2004

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation Tc = 25°C 416 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 315A @ 600V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

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 APTGF90H60T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 100µA 600 V
VGE = 0V Tj = 25°C 100
ICES Zero Gate Voltage Collector Current µA
VCE = 600V Tj = 125°C 1000
VGE =15V Tj = 25°C 2.0 2.5
VCE(on) Collector Emitter on Voltage V
IC = 90A Tj = 125°C 2.2
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 3 5 V
IGES Gate – Emitter Leakage Current VGE = 20 V, VCE = 0V ±150 nA

Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance VGE = 0V 4300
Coes Output Capacitance VCE = 25V 470 pF
Cres Reverse Transfer Capacitance f = 1MHz 400
Qg Total gate Charge VGS = 15V 330
Qge Gate – Emitter Charge VBus = 300V 290 nC
Qgc Gate – Collector Charge IC = 90A 200
Td(on) Turn-on Delay Time Inductive Switching (25°C) 26
Tr Rise Time VGE = 15V 25
VBus = 400V ns
Td(off) Turn-off Delay Time 150
IC = 90A
Tf Fall Time RG = 5 W 30
Eon Turn-on Switching Energy u 3.35
mJ
Eoff Turn-off Switching Energy v 2.85
Td(on) Turn-on Delay Time Inductive Switching (125°C) 26
Tr Rise Time VGE = 15V 25
VBus = 400V ns
Td(off) Turn-off Delay Time 170
IC = 90A
Tf Fall Time RG = 5 W 40
Eon Turn-on Switching Energy u 4.3
mJ
Eoff Turn-off Switching Energy v 3.5

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit
IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A
IF = 60A 1.6 1.8
VF Diode Forward Voltage IF = 120A 1.9 V
IF = 60A Tj = 125°C 1.4
IF = 60A Tj = 25°C 85
trr Reverse Recovery Time VR = 400V ns
APTGF90H60T – Rev 1 March, 2004

di/dt =400A/µs Tj = 125°C 160

IF = 60A Tj = 25°C 260
Qrr Reverse Recovery Charge VR = 400V nC
di/dt =400A/µs Tj = 125°C 1400

u Eon includes diode reverse recovery

v In accordance with JEDEC standard JESD24-1

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 APTGF90H60T

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit
IGBT 0.3
RthJC Junction to Case °C/W
Diode 0.65
RMS Isolation Voltage, any terminal to case t =1 min,
VISOL 2500 V
I isol<1mA, 50/60Hz
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125 °C
TC Operating Case Temperature -40 100
Torque Mounting torque To Heatsink M5 4.7 N.m
Wt Package Weight 160 g

Temperature sensor NTC

Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 68 kW
B 25/85 T25 = 298.16 K 4080 K
R25 T: Thermistor temperature
RT =
é æ 1 1 öù RT: Thermistor value at T
expê B25 / 85 çç - ÷÷ú
ë è T25 T øû

Package outline

APTGF90H60T – Rev 1 March, 2004

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 APTGF90H60T
Typical Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V)
350 300
250µs Pulse Test Tc=-55°C 250µs Pulse Test Tc=-55°C

Ic, Collector Current (A)

300 < 0.5% Duty cycle 250
Ic, Collector Current (A)

< 0.5% Duty cycle

250 Tc=25°C 200

Tc=25°C
200
150
150
100
100 Tc=125°C
Tc=125°C
50
50

0 0
0 1 2 3 4 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V)

Transfer Characteristics Gate Charge

300 18
250µs Pulse Test IC = 90A

VGE, Gate to Emitter Voltage (V)

16 VCE=120V
Ic, Collector Current (A)

250 < 0.5% Duty cycle

TJ = 25°C
14
VCE=300V
200 12
10
150
8 VCE=480V
100 6
TJ=25°C
4
50
TJ=125°C 2
TJ=-55°C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350
VGE, Gate to Emitter Voltage (V) Gate Charge (nC)

On state Voltage vs Junction Temperature

VCE, Collector to Emitter Voltage (V)

On state Voltage vs Gate to Emitter Volt.

VCE, Collector to Emitter Voltage (V)

8 4
TJ = 25°C
7 3.5
250µs Pulse Test Ic=180A
6 < 0.5% Duty cycle 3
Ic=180A
5 2.5
Ic=90A
4 2
3 Ic=90A 1.5
Ic=45A
2 1 250µs Pulse Test
Ic=45A < 0.5% Duty cycle
1 0.5 VGE = 15V
0 0
6 8 10 12 14 16 -50 -25 0 25 50 75 100 125
VGE, Gate to Emitter Voltage (V) TJ, Junction Temperature (°C)

Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature

160
Collector to Emitter Breakdown

1.20
140
Ic, DC Collector Current (A)
Voltage (Normalized)

1.10
120

1.00 100
80
APTGF90H60T – Rev 1 March, 2004

0.90
60

0.80
40
20
0.70 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C) TC, Case Temperature (°C)

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 APTGF90H60T
Turn-On Delay Time vs Collector Current Turn-Off Delay Time vs Collector Current
td(on), Turn-On Delay Time (ns) 35 250

td(off), Turn-Off Delay Time (ns)

30 200 VGE=15V,
VGE = 15V TJ=125°C
25 150

Tj = 25°C VGE=15V,
20 100
VCE = 400V VCE = 400V TJ=25°C
RG = 5Ω RG = 5Ω
15 50
25 50 75 100 125 150 25 50 75 100 125 150
ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A)

Current Rise Time vs Collector Current Current Fall Time vs Collector Current
80 80
VCE = 400V VCE = 400V, VGE = 15V, RG = 5Ω
RG = 5Ω
60 60
tr, Rise Time (ns)

tf, Fall Time (ns)

TJ = 125°C
VGE=15V,
40 40
TJ=125°C

20 20 TJ = 25°C

0 0
25 50 75 100 125 150 25 50 75 100 125 150
ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A)

Turn-On Energy Loss vs Collector Current Turn-Off Energy Loss vs Collector Current
6
8
Eoff, Turn-off Energy Loss (mJ)

VCE = 400V
TJ = 125°C
Eon, Turn-On Energy Loss (mJ)

VCE = 400V 5 VGE = 15V

RG = 5Ω RG = 5Ω
6
4

TJ=125°C,
4 TJ=25°C, 3 TJ = 25°C
VGE=15V
VGE=15V
2
2
1

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A)

Switching Energy Losses vs Gate Resistance Switching Energy Losses vs Junction Temp.
16 10
VCE = 400V
Switching Energy Losses (mJ)

VCE = 400V
Switching Energy Losses (mJ)

Eon, 180A Eoff, 180A

VGE = 15V VGE = 15V Eon, 180A
TJ = 125°C 8 RG = 5Ω
12

Eoff, 90A Eoff, 180A

6
8 Eon, 90A

4 Eon, 90A
Eoff, 45A
APTGF90H60T – Rev 1 March, 2004

4 Eoff, 90A
2 Eon, 45A
Eon, 45A Eoff, 45A
0 0
0 10 20 30 40 50 0 25 50 75 100 125
Gate Resistance (Ohms) TJ, Junction Temperature (°C)

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 APTGF90H60T
Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area
10000 350
Cies
300

IC, Collector Current (A)

C, Capacitance (pF)

250

200
1000
150
Coes
100
Cres
50

100 0
0 10 20 30 40 50 0 200 400 600 800
VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.35
Thermal Impedance (°C/W)

0.3 0.9
0.25
0.7
0.2
0.5
0.15

0.1 0.3

0.05 0.1 Single Pulse

0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)

Operating Frequency vs Collector Current

120
Fmax, Operating Frequency (kHz)

VCE = 400V
100 D = 50%
RG = 5Ω
80
TJ = 125°C
60

40

20

0
20 40 60 80 100 120
IC, Collector Current (A)
APTGF90H60T – Rev 1 March, 2004

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.

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