10/10/24, 10:22 AM Test Generator

SEMICONDUCTOR
PHYSICS
Class : XII

Roll No. : Time -

Date : MM - 82

1. In the given diagram, is the diode D forward or reverse biased? 1

2. What happens to the width of depletion layer of a p–n junction when it is (i) forward biased, (ii) 1
reverse biased?

3. Draw energy band diagram for an intrinsic semiconductor at T = 0 K. 1

4. Draw energy band diagram for an intrinsic semiconductor at T > 0 K. 1

5. Which one of the two diodes D1 and D2 in the given figures (i) forward biased, (ii) reverse biased 1
?

6. Distinguish between ‘intrinsic’ and ‘extrinsic’ semiconductors. 2

7. Draw energy band diagrams of an n-type and a p-type semiconductor at temperature T > 0 K. 2
Mark the donor and acceptor energy levels with their energies.

8. Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why a p- 2
type semiconductor crystal is electrically neutral, although nh >> ne?

9. Draw the circuit diagrams showing how a p–n junction diode is 2

(i) forward biased and
(ii) reverse biased. How is the width of depletion layer affected in the two cases?

10. Explain, with the help of a circuit diagram, the working of a p–n junction diode as a half-wave 2
rectifier.

11. What is doping? Why is it needed? 2

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12. A forward biased PN junction has a potential drop of 0.4 V across it, that is independent of the 2
current. It can withstand a maximum current of 8 mA, beyond which it will burn out. If this diode is in
series with 150 ohm of resistance, find the maximum battery voltage that should be applied when in
forward bias.

13. In the following diagram S is a semiconductor. Would you increase or decrease the value of R to 2
keep the reading of the ammeter A constant when S is heated? Give reason for your answer.

14. (a) In the following diagram, which bulb out of B1 and B2 will glow and why? 2

(b) Which diode offers very high resistance in the above circuit and why?

15. Draw V-I characteristics of a p-n junction diode. Explain, why the current under reverse bias is 2
almost independent of the applied voltage up to the critical voltage.

16. (a) Explain with the help of a diagram, how depletion region and potential barrier are formed in a 3
junction diode.
(b) If a small voltage is applied to a p–n junction diode how will the barrier potential be affected
when it is (i) forward biased, and (ii) reverse biased?

17. Draw V–I characteristics of a p–n junction diode. Answer the following questions, giving reasons: 3
(i) Why is the current under the reverse bias almost independent of the applied potential up to a
critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name any semiconductor device which operates under the reverse bias in the breakdown region.

18. Draw a block diagram of a full-wave rectifier with capacitor filter. Draw input and output (filtered) 3
voltage of rectifier.

19. With the help of energy band diagrams, distinguish between conductors, semiconductors and 3
insulators.

20. Write briefly the important processes that occur during the formation of p–n junction. With the 3
help of necessary diagrams, explain the term ‘barrier potential’.

21. (a) Explain the formation of a p-n junction. 3

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(b) Can we take one slab of p-type semiconductor and physically join it to another n-type
semiconductor to get a p-n junction? Explain.

22. Draw the circuit diagram of a full-wave rectifier using p–n junction diode. Explain its working and 3
show the output and input waveforms.

23. (a) State briefly the processes involved in the formation of p–n junction explaining clearly how 5
the depletion region is formed.
(b) Using the necessary circuit diagrams, show how the V-I characteristics of a p–n junction are
obtained in
(i) Forward biasing (ii) Reverse biasing
How are these characteristics made use of in rectification?

24. (a) Distinguish between an intrinsic semiconductor and a p-type semiconductor. Give 5
reason why a p-type semiconductor is electrically neutral, although nh >> ne.
(b) Explain, how the heavy doping of both p- and n-sides of a p–n junction diode results in the
electric field of the junction being extremely high even with a reverse bias voltage of a few volts.
Explain, with the help of a circuit diagram, how this property is used in voltage regulator.

25. The circuit shown in the figure has two oppositely connected ideal diodes connected in parallel. 4
Find the current flowing through each diode in the circuit.

26. The V–I characteristic of a silicon diode is as shown in the figure. Calculate the resistance of the 4
diode at (i) I = 15 mA and (ii) V = – 10 V.

27. The conductivity of a semiconductor increases with increase in temperature, because 1

(a) number density of free current carriers increases.
(b) relaxation time increases.
(c) both number density of carriers and relaxation time increase.
(d) number density of carriers increases, relaxation time decreases but effect of decrease in
relaxation time is much less than increase in number density.

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28. In the given figure V0 is the potential barrier across a p-n junction, when no battery is connected 1
across the junction.

(a) 1 and 3 both correspond to forward bias of junction.

(b) 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junction.
(c) 1 corresponds to forward bias and 3 corresponds to reverse bias of junction.
(d) 3 and 1 both correspond to reverse bias of junction.

29. In figure given, assuming the diodes to be ideal 1

(a) D1 is forward biased and D2 is reverse biased and hence current flows from A to B.
(b) D2 is forward biased and D1 is reverse biased and hence no current flows from B to A and vice
versa.
(c) D1 and D2 are both forward biased and hence current flows from A to B.
(d) D1 and D2 are both reverse biased and hence no current flows from A to B and vice versa.

30. The output of the given circuit in figure is given below. 1

(a) would be zero at all times.

(b) would be like a half-wave rectifier with positive cycles in output.
(c) would be like a half-wave rectifier with negative cycles in output.
(d) would be like that of a full-wave rectifier.

31. Electrical conductivity of a semiconductor 1

(a) decreases with the rise in its temperature.
(b) increases with the rise in its temperature.
(c) does not change with the rise in its temperature.
(d) first increases and then decreases with the rise in its temperature.

32. In the half-wave rectifier circuit shown. Which one of the following waveforms is true for VCD the 1
output across C and D?

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33. A full-wave rectifier circuit along with the input and output voltages is shown in the figure The 1
contribution to output voltage from diode 2 is

(a) A, C (b) B, D
(c) B, C (d) A, D

34. A 220 V AC supply is connected between points A and B (figure). What will be the potential 1
difference V across the capacitor?

(a) 200 V (b) 110 V

(c) 0 V (d) 220 V

35. In the circuit shown in figure below, if the diode forward voltage drop is 0.3 V, the voltage 1
difference between A and B is

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(a) 1.3 V (b) 2.3 V

(c) 0 (d) 0.5 V

36. When an electric field is applied across a semiconductor [NCERT Exemplar] 1

(a) holes move from lower energy level to higher energy level in the conduction band.
(b) electrons move from higher energy level to lower energy level in the conduction band.
(c) holes in the valence band move from higher energy level to lower energy level.
(d) holes in the valence band move from lower energy level to higher energy level.

37. In the depletion region of a diode 1

(a) there are mobile charges.
(b) equal number of holes and elections exist, making the region neutral.
(c) recombination of holes and electrons has taken place.
(d) immobile charged ions do not exist.

38. A p-type semiconductor can be obtained by adding 1

(a) arsenic to pure silicon.
(b) gallium to pure silicon.
(c) antimony to pure germanium.
(d) phosphorus to pure germanium.

39. In a p-type semiconductor, there is 1

(a) excess of one electron.
(b) absence of one electron.
(c) a missing atom.
(d) a donar level.

40. Current in the circuit will be 1

(a) 5/40 A (b) 5/50 A

(c) 5/10 A (d) 5/20 A

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41. 1

42. Find VAB. 1

(a) 10 V (b) 20 V
(c) 30 V (d) None of these

43. In the half-wave rectifier circuit shown. Which one of the following waveforms is true for VCD the 1
output across C and D?

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10/10/24, 10:22 AM Test Generator
44. A full-wave rectifier circuit along with the input and output voltages is shown in the figure The 1

contribution to output voltage from diode 2 is

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