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73-469-19 NE5517N Transkonduktans OP
73-469-27 NE5517D Transkonduktans OP
Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

DESCRIPTION PIN CONFIGURATION

The NE5517 contains two current-controlled transconductance
N, D Packages
amplifiers, each with a differential input and push-pull output. The
NE5517 offers significant design and performance advantages over IABCa 1 16 IABCb
similar devices for all types of programmable gain applications.
Da 2 15 Db
Circuit performance is enhanced through the use of linearizing
diodes at the inputs which enable a 10dB signal-to-noise +INa 3 14 +INb
improvement referenced to 0.5% THD. The NE5517 is suited for a -INa 4 13 -INb
wide variety of industrial and consumer applications and is VOa 5 12 VOb
recommended as the preferred circuit in the Dolby* HX (Headroom
V- 6 11 V+
Extension) system.
INBUFFERa 7 10 INBUFFERb
Constant impedance buffers on the chip allow general use of the
NE5517. These buffers are made of Darlington transistor and a VOBUFFERa 8 9 VOBUFFERb

biasing network which changes bias current in dependence of IABC.

Top View
Therefore, changes of output offset voltages are almost eliminated.
This is an advantage of the NE5517 compared to LM13600. With
the LM13600, a burst in the bias current IABC guides to an audible
offset voltage change at the output. With the constant impedance
APPLICATIONS
buffers of the NE5517 this effect can be avoided and makes this • Multiplexers
circuit preferable for high quality audio applications.
• Timers
• Electronic music synthesizers
FEATURES • Dolby HX Systems
• Constant impedance buffers
• Current-controlled amplifiers, filters
• ∆VBE of buffer is constant with amplifier IBIAS change
• Current-controlled oscillators, impedances
• Pin compatible with LM13600
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
• Excellent matching between amplifiers
• Linearizing diodes
• High output signal-to-noise ratio

PIN DESIGNATION
PIN NO. SYMBOL NAME AND FUNCTION
1 IABC Amplifier bias input A
2 D Diode bias A
3 +IN Non-inverting input A
4 -IN Inverting input A
5 VO Output A
6 V- Negative supply
7 INBUFFER Buffer input A
8 VOBUFFER Buffer output A
9 VOBUFFER Buffer output B
10 INBUFFER Buffer input B
11 V+ Positive supply
12 VO Output B
13 -IN Inverting input B
14 +IN Non-inverting input B
15 D Diode bias B
16 IABC Amplifier bias input B

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

CIRCUIT SCHEMATIC
V+
11

D4 D6

Q14 Q12
Q6 7,10 Q13
Q10

8,9

Q7 Q11

2,15

D2 D3 VOUTPUT

–INPUT Q4 Q5 +INPUT 5,12

4,13 3,14

1,16 Q15 Q16

AMP BIAS Q3
Q2
INPUT D7
Q9
R1
Q1 Q8 D8

D1
D5
V–
6

CONNECTION DIAGRAM

B
AMP B B B B B
BIAS DIODE INPUT INPUT B BUFFER BUFFER
INPUT BIAS (+) (–) OUTPUT V+ (1) INPUT OUTPUT
16 15 14 13 12 11 10 9

1 2 3 4 5 6 7 8

AMP DIODE INPUT INPUT OUTPUT V– BUFFER BUFFER

BIAS BIAS (+) (–) A INPUT OUTPUT
INPUT A A A A A
A

NOTE:
1. V+ of output buffers and amplifiers are internally connected.

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5517N 0406C
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5517AN 0406C
16-Pin Small Outline (SO) Package 0 to +70°C NE5517D 0005D

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT
VS Supply voltage1
NE5517 36 VDC or ±18 V
NE5517A 44 VDC or ±22 V
PD Power dissipation,
TA=25°C (still air)2
NE5517N, NE5517AN 1500 mW
NE5517D 1125 mW
VIN Differential input voltage ±5 V
ID Diode bias current 2 mA
IABC Amplifier bias current 2 mA
ISC Output short-circuit duration Indefinite
IOUT Buffer output current3 20 mA
TA Operating temperature range
NE5517N, NE5517AN 0°C to +70 °C
VDC DC input voltage +VS to -VS
TSTG Storage temperature range -65°C to +150°C °C
TSOLD Lead soldering temperature (10sec max) 300 °C
NOTES:
1. For selections to a supply voltage above ±22V, contact factory
2. The following derating factors should be applied above 25°C
N package at 12.0mW/°C
D package at 9.0mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.

DC ELECTRICAL CHARACTERISTICS1
NE5517 NE5517A
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max Min Typ Max
0.4 5 0.4 2 mV
VOS Input offset voltage Over temperature range 5 mV
IABC 5µA 0.3 5 0.3 2 mV
∆VOS/∆T Avg. TC of input offset voltage 7 7 µV/°C
VOS including diodes Diode bias current (ID)=500µA 0.5 5 0.5 2 mV
VOS Input offset change 5µA ≤ IABC ≤ 500µA 0.1 0.1 3 mV
IOS Input offset current 0.1 0.6 0.1 0.6 µA
∆IOS/∆T Avg. TC of input offset current 0.001 0.001 µA/°C
0.4 5 0.4 5 µA
IBIAS Input bias current
Over temperature range 1 8 1 7 µA
∆IB/∆T Avg. TC of input current 0.01 0.01 µA/°C
6700 9600 13000 7700 9600 12000 µmho
gM Forward transconductance
Over temperature range 5400 4000 µmho
gM tracking 0.3 0.3 dB
RL=0, IABC=5µA 5 3 5 7 µA
IOUT Peak output current RL=0, IABC=500µA 350 500 650 350 500 650 µA
RL=0, 300 300 µA

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

DC ELECTRICAL CHARACTERISTICS1 (continued)

NE5517 NE5517A
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max Min Typ Max
VOUT Peak output voltage
Positive RL=∞, 5µA≤IABC≤500µA +12 +14.2 +12 +14.2 V
Negative RL=∞, 5µA≤IABC≤500µA -12 -14.4 -12 -14.4 V
ICC Supply current IABC=500µA, both channels 2.6 4 2.6 4 mA
VOS sensitivity
Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V
Negative ∆ VOS/∆ V- 20 150 20 150 µV/V
Common-mode rejection
CMRR 80 110 80 110 dB
ration
Common-mode range ±12 ±13.5 ±12 ±13.5 V
Referred to input2
Crosstalk 100 100 dB
20Hz<f<20kHz
IIN Differential input current IABC=0, input=±4V 0.02 100 0.02 10 nA
Leakage current IABC=0 (Refer to test circuit) 0.2 100 0.2 5 nA
RIN Input resistance 10 26 10 26 kΩ
BW Open-loop bandwidth 2 2 MHz
SR Slew rate Unity gain compensated 50 50 V/µs
INBUFFER Buff. input current 5 0.4 5 0.4 5 µA
VO-
Peak buffer output voltage 5 10 10 V
BUFFER
Refer to Buffer VBE test3
∆VBE of buffer 0.5 5 0.5 5 mV
circuit
NOTES:
1. These specifications apply for VS=±15V, TA=25°C, amplifier bias current (IABC)=500µA, Pins 2 and 15 open unless otherwise specified. The
inputs to the buffers are grounded and outputs are open.
2. These specifications apply for VS=±15V, IABC=500µA, ROUT=5kΩ connected from the buffer output to -VS and the input of the buffer is
connected to the transconductance amplifier output.
3. VS=±15, ROUT=5kΩ connected from Buffer output to -VS and 5µA ≤IABC ≤500µA.

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

TYPICAL PERFORMANCE CHARACTERISTICS

Input Offset Voltage Input Bias Current Input Bias Current

5 10 3 10 4
4 VS = ±15V VS = ±15V
VS = ±15V

INPUT OFFSET CURRENT (nA)

INPUT OFFSET VOLTAGE (mV)

INPUT BIAS CURRENT (nA)

2 2 3
+125°C 10 10
1 -55°C
-55°C
0
-1 +25°C 2
10 10
-2 +125°C +25°C
-3
+125°C -55°C
-4
-5 1 10
-6
+125°C
-7 +25°C
-8 0.1 1
.1µA 1µA 10µA 100µA 1000µA .1µA 1µA 10µA 100µA 1000µA .1µA 1µA 10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I ABC) AMPLIFIER BIAS CURRENT (I ABC) AMPLIFIER BIAS CURRENT (IABC)

Peak Output Voltage and

Peak Output Current Common-Mode Range Leakage Current
10 4 5 10 5
VOUT (+)VIN = (–)VIN = VOUT = 36V
VS = ±15V 4
PEAK OUTPUT CURRENT ( µ A)

3 VCMR
PEAK OUTPUT VOLTAGE AND

+125°C
COMMON-MODE RANGE (V)

LEAKAGE CURRENT (pA)

10 3 2 10 4
1 VS = ±15V
+25°C 0 RLOAD = ∞
-55°C -1 TA = 25°C
10 2 10 3
-2
-3 VCMR
0V
-4
10 -5 10 2
-6 VOUT
-7
1 -8 10
.1µA 1µA 10µA 100µA 1000µA .1µA 1µA 10µA 100µA 1000µA -50°C -25°C 0°C 25°C 50°C 75°C100°C125°C

AMPLIFIER BIAS CURRENT (IABC) AMBIENT TEMPERATURE (TA)

AMPLIFIER BIAS CURRENT (I ABC)

Input Leakage Transconductance Input Resistance

10 4 10 5 10 2
TRANSCONDUCTANCE (gM) — ( µ ohm)

gM PINS 2, 15
+125°C PINS 2, 15
OPEN
INPUT LEAKAGE CURRENT (pA)

mq OPEN
INPUT RESISTANCE (MEG Ω )

m VS = ±15V
M 1
10 3 10 4 10

10 2 10 3 1

+25°C
-55°C +125°C
10 10 2 .1

+25°C

1 10 .01
0 1 2 3 4 5 6 7 .1µA 1µA 10µA 100µA 1000µA .1µA 1µA 10µA 100µA 1000µA
INPUT DIFFERENTIAL VOLTAGE AMPLIFIER BIAS CURRENT (I ABC) AMPLIFIER BIAS CURRENT (I ABC)

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Amplifier Bias Voltage vs Distortion vs Differential

Amplifier Bias Current Input and Output Capacitance Input Voltage
2000 7 100
1800 VS = ±15V TA = +25°C RL = 10kΩ
AMPLIFIER BIAS VOLTAGE (mV)

-55°C 6

OUTPUT DISTORTION (%)

IABC = 1mA
1600
10

CAPACITANCE (pF)
1400 5 CIN
+25°C
1200 4
COUT 1
1000
+125°C 3
800

600 2 0.1
400
1
200
0.01
0 0
.1µA 1µA 10µA 100µA 1000µA .1µA 1µA 10µA 100µA 1000µA 1 10 100 1000
AMPLIFIER BIAS CURRENT (I ABC) DIFFERENTIAL INPUT VOLTAGE (mVP-P)
AMPLIFIER BIAS CURRENT (I ABC)

Voltage vs Amplifier Bias Current Noise vs Frequency

20 600
VS = ±15V
OUTPUT VOLTAGE RELATIVE TO

OUTPUT NOISE CURRENT (pA/Hz)

RL = 10kΩ
0 500
VIN = 80mVP-P
1 VOLT RMS (dB)

-20 400
VIN = 40mVP-P

-40 300

IABC = 1mA
-60 200
OUTPUT NOISE
-80 20kHz BW 100
IABC = 100µA

-100 0
.1µA 1µA 10µA 100µA 1000µA 10 100 1k 10k 100k
IABC AMPLIFIER BIAS CURRENT (µA) FREQUENCY (Hz)

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

+36V +15V

4, 13 4V 4, 13
A – 11 A – 11

5, 12 7, 10
2, 15 2, 15 5, 12
NE5517 NE5517
8, 9 1, 10
1, 15
3, 14 3, 14
+ 6 + 6

–15V

Leakage Current Test Circuit Differential Input Current Test Circuit

V+

V
50kΩ

V–

Buffer VBE Test Circuit

APPLICATIONS
+15V
0.01µF

10k 3, 14
62k
INPUT – 11

390pF 1, 16
2, 15 7, 10
51Ω NE5517
8, 9
4, 13 5, 12
OUTPUT
1.3k
+ 6 0.01µF

5k

–15V
10k
–15V
0.001µF

Unity Gain Follower

CIRCUIT DESCRIPTION Where VIN is the difference of the two input voltages
The circuit schematic diagram of one-half of the NE5517, a dual KT ≅ 26mV at room temperature (300°k).
operational transconductance amplifier with linearizing diodes and
impedance buffers, is shown in Figure 1. Transistors Q1, Q2 and diode D1 form a current mirror which focuses
the sum of current I4 and I5 to be equal to amplifier bias current IB:
1. Transconductance Amplifier I4 + I5 = IB (2)
The transistor pair, Q4 and Q5, forms a transconductance stage. The
ratio of their collector currents (I4 and I5, respectively) is defined by If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor
the differential input voltage, VIN, which is shown in equation 1. series of In function can be approximated as

KT I5 KT I5 KT I 5 * I 4 (3)
q In I 4 [ q
V IN + q In (1)
I4 I4

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

and I4 ≅ I5 ≅ IB The only limitation is that the signal current should not exceed ID.

KT I 5 KT I 5 * I 4 2KT I 5 * I 4 3. Impedance Buffer

q In I 4 [ q 1 2I + q + V(4)
IN
B IB The upper limit of transconductance is defined by the maximum
q
IB value of IB (2mA). The lowest value of IB for which the amplifier will
I 5 * I 4 + V IN function therefore determines the overall dynamic range. At low
2KT
values of IB, a buffer with very low input bias current is desired. A
The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form Darlington amplifier with constant-current source (Q14, Q15, Q16, D7,
three current mirrors that produce an output current equal to I5 mi- D8, and R1) suits the need.
nus I4. Thus:
APPLICATIONS
q
V IN IB + IO (5) Voltage-Controlled Amplifier
2KT
q In Figure 3, the voltage divider R2, R3 divides the input-voltage into
IB
small values (mV range) so the amplifier operates in a linear man-
The term 2KT is then the transconductance
ner.
It is:
of the amplifier and is proportional to IB. R3
I OUT + * V IN gM;
R2 R3
2. Linearizing Diodes
For VIN greater than a few millivolts, equation 3 becomes invalid and
V OUT + I OUT R L;
the transconductance increases non-linearly. Figure 2 shows how
the internal diodes can linearize the transfer function of the opera- V OUT R3
tional amplifier. Assume D2 and D3 are biased with current sources A+ + gM RL
V IN R2 R3
and the input signal current is IS. Since
I4 + I5 = IB and I5 - I4 = I0, that is: (3) gM = 19.2 IABC
I4 = (IB - I0), I5 = (IB + I0) (gM in µmhos for IABC in mA)
For the diodes and the input transistors that have identical geome- Since gM is directly proportional to IABC, the amplification is con-
tries and are subject to similar voltages and temperatures, the fol- trolled by the voltage VC in a simple way.
lowing equation is true:
When VC is taken relative to -VCC the following formula is valid:
ID
IS 1 2(I B I O) (6) (V C * 1.2V)
T 2 KT I ABC +
q In I + q In R1
D 1 2(I B * I O)
* IS
2
ID The 1.2V is the voltage across two base-emitter baths in the current
2 IB
IO + IS for |I S| mirrors. This circuit is the base for many applications of the NE5517.
ID 2

V+
11
D4 D6

Q14 Q12
Q6 7,10 Q13
Q10

8,9

Q7 Q11

2,15

D2 D3 VOUTPUT

–INPUT Q4 Q5 +INPUT 5,12

4,13 3,14

1,16 Q15 Q16

AMP BIAS Q3
Q2
INPUT D7
Q9
R1
Q1 Q8 D8

D1
D5
V–
6 Figure 1. Circuit Diagram of NE5517

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

where gM is approximately 19.21 µMHOs at room temperature. Fig-

+VS
ure 7 shows a Voltage Controlled Resistor using linearizing diodes.
This improves the noise performance of the resistor.
ID

I Voltage-Controlled Filters
B
I0 + 2 I Figure 8 shows a Voltage Controlled Low-Pass Filter. The circuit is a
S I
ID ID D
unity gain buffer until XC/gM is equal to R/RA. Then, the frequency
* I I
2 S 2 S I0 + I5 * I4 response rolls off at a 6dB per octave with the -3dB point being de-
fined by the given equations. Operating in the same manner, a Volt-
I4 I5 age Controlled High-Pass Filter is shown in Figure 9. Higher order
D3 D2 filters can be made using additional amplifiers as shown in Figures
1/2ID 10 and 11.
Q4 I5
IS
Voltage-Controlled Oscillators
IS
1/2ID
Figure 12 shows a voltage-controlled triangle-square wave genera-
IB tor. With the indicated values a range from 2Hz to 200kHz is pos-
sible by varying IABC from 1mA to 10µA.
–VS The output amplitude is determined by
IOUT × ROUT.
Figure 2. Linearizing Diode Please notice the differential input voltage is not allowed to be above
5V.
Stereo Amplifier With Gain Control
With a slight modification of this circuit you can get the sawtooth
Figure 4 shows a stereo amplifier with variable gain via a control
pulse generator, as shown in Figure 13.
input. Excellent tracking of typical 0.3dB is easy to achieve. With the
potentiometer, RP, the offset can be adjusted. For AC-coupled ampli-
fiers, the potentiometer may be replaced with two 510Ω resistors.
APPLICATION HINTS
Modulators To hold the transconductance gM within the linear range, IABC
Because the transconductance of an OTA (Operational Transcon- should be chosen not greater than 1mA. The current mirror ratio
ductance Amplifier) is directly proportional to IABC, the amplification should be as accurate as possible over the entire current range. A
of a signal can be controlled easily. The output current is the product current mirror with only two transistors is not recommended. A suit-
from transconductance×input voltage. The circuit is effective up to able current mirror can be built with a PNP transistor array which
approximately 200kHz. Modulation of 99% is easy to achieve. causes excellent matching and thermal coupling among the transis-
tors. The output current range of the DAC normally reaches from 0
Voltage-Controlled Resistor (VCR) to -2mA. In this application, however, the current range is set
Because an OTA is capable of producing an output current propor- through RREF (10kΩ) to 0 to -1mA.
tional to the input voltage, a voltage variable resistor can be made. V REF 5V
Figure 6 shows how this is done. A voltage presented at the RX I DACMAX + 2 +2 + 1mA
R REF 10k
terminals forces a voltage at the input. This voltage is multiplied by
gM and thereby forces a current through the RX terminals:

RX = R RA
gM RA
INT
VC
+VCC

+VCC
R1 IABC
R4 = R2/ /R3 3
+ 11 1
5 7
NE5517
R2
VIN – 6 8
4 VOUT
IOUT RL

R3 RS
INT
-VCC

TYPICAL VALUES: R1 = 47k

R2 = 10k
R3 = 200Ω
R4 = 200Ω
RL = 100k
RS = 47k
Figure 3.

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

+VCC

10k 3
VIN1 + 11
INT
RIN 15k +VCC
RP NE5517/A
1k RD
+VCC IABC
– 8
4 1 VOUT1
RL
30k 10k
VC 5.1k
RC
10k 14 16
VIN2 + -VCC
RIN IABC
15k 15 10 +VCC
RP NE5517/A
1k +VCC RD 12
– 6 9
13 VOUT2
RL
10k
RS

-VCC
INT

Figure 4. Gain-Controlled Stereo Amplifier

RC
30k
VIN2 1
SIGNAL
IABC +VCC

11
ID INT
3 +VCC
+

15k 2 5 7
NE5517/A
VOS 1k

VIN1 –
4 8
CARRIER 10k RL VOUT
10k
6 RS

-VCC
-VCC
INT
Figure 5. Amplitude Modulator

R RA
R +
X gM RA
30k
+VCC VC
INT
3 11 +VCC
+
IO
2
NE5517/A
5 7
– C
4
8 VOUT
RX R
200 200 -VCC
100k 10k

-VCC
INT

Figure 6. VCR

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Dual operational transconductance amplifier NE5517/5517A

+VCC 1 30k
VC

+VCC
ID
INT
3 11 +VCC
RP
VOS 2
NE5517/A
1k 5 7
6 C
4 8
RX R
-VCC
100k 10k

-VCC
INT

Figure 7. VCR with Linearizing Diodes

1 30k
VC
+VCC
IABC
INT
100k 3 11 +VCC
VIN +

2
NE5517/A
5 7
– 6 C
4 150pF 8
VOUT

200 -VCC R
RA 200 10k
100k

-VCC
INT

NOTE:
RA gM
f +
O g(R RA) 2pC

Figure 8. Voltage-Controlled Low-Pass Filter

1 30k
VC
+VCC
+VCC
IABC
INT
VOS 100k 3 11 +VCC
+
NULL
2
NE5517/A
-VCC 5 7
– 6 C
4 0.005µF 8
VOUT
RA
1k -VCC R
1k 100k 10k

-VCC
INT

NOTE:
RA gM
f +
O g(R RA) 2pC

Figure 9. Voltage-Controlled High-Pass Filter

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Philips Semiconductors Linear Products Product specification

Dual operational transconductance amplifier NE5517/5517A

15k
VC
+VCC
+VCC INT
+VCC
VIN + +

NE5517/A NE5517/A
100k
C – 2C 200pF
–
100pF RA VOUT
200
R 100k RA
200 RA -VCC 10k 10k
100k 200
200
-VCC
-VCC INT

NOTE:
R A gM
f +
O (R R A) 2p C

Figure 10. Butterworth Filter – 2nd Order

1 16 15k
VC
+VCC
+VCC INT
10k 3 14 +VCC
+ 11 +

2 5 7 12 10
NE5517/A 20k 15 NE5517/A LOW
PASS
– 6 – 800pF VOUT
800pF 13
9
1k
1k -VCC 5.1k
20k 20k 5.1k

-VCC
-VCC
INT
BANDPASS OUT

Figure 11. State Variable Filter

30k +VCC
VC

+VCC INT +VCC INT

47k
4 13 +VCC
– 11 –
1 5 7 12 10
NE5517/A NE5517/A
16
3 + 6 C +
0.1µF 8
14 9 VOUT2

-VCC
20k 10k

-VCC
-VCC VOUT1 INT

GAIN
CONTROL

Figure 12. Triangle-Square Wave Generator (VCO)

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Dual operational transconductance amplifier NE5517/5517A

IC IB
470k 1 +VCC
VC

+VCC INT +VCC 16 INT +VCC

47k
4 13 30k
+ 11 –
5 7 12 10
2 NE5517/A NE5517/A

3 C
– 6 +
0.1µF 8
14

R1 -VCC R2
30k 20k
30k
-VCC

-VCC VOUT1
NOTE: VOUT2
(V * 0.8) R 1 2V PK x C 2V PKxC I INT
C C
V + T + T + f I I
PK R1 R2 H IB L I OSC 2V xC C B
C PK
Figure 13. Sawtooth Pulse VCO

August 31, 1994 104