CA3083

General-Purpose High-Current
N·P·N Transistor Array
RCA-CA3083 is a versatile array of five high-current (to Features
lOOmA) n-p-n transistors on a common monolithic substrate.
In addition, two of these transistors (01 and 02) are • High le: 100mA max.
matched at low currents (i.e. lmA) for applications in which
offset parameters are of special importance. • Low VcEsat (at 50mA): 0.7V max.
• Matched pair (01 and 02)-
Independent connections tor each transistor plus a separate
v10 (V 8 e matched): ± 5 mV max.
terminal for the substrate permit maximum flexibility in
circuit design. The CA3083 is supplied in a 16-lead dual-in- 110 (at 1 mA): 2.5 µA max.
line plastic package, and the CA3083F in a 16-lead dual-in- • 5 independent transistors plus separate substrate connection
line frit-seat ceramic package.
• The CA3083 is available in a sealed-junction
Beam-Lead version (CA3083L). For further
information see File No. 515. "Beam-Lead
Devices for Hybrid Circuit Applications". Fig.1-Functional diagram of the CA3083.
Applications

• Signal processing and switching systems operating from DC to VHF

• Lamp and relay driver
• Differential amplifier
• Temperature-compensated amplifier ELECTRICAL CHARACTERISTICS at TA= 25°C
For Equipment Design
• Thyristor firing
TEST CONDITIONS LIMITS
• See RCA Application Note, ICAN-5296 "Application of the RCA-CA3018
Circuit Transistor Array" for suggested applications Typ.
CHARACTERISTICS SYMBOL Char. UNITS
Curve Min. Typ. Ma><.
Fig. No.
For Each Transistor:
MAXIMUM RATINGS, Absolute-Ma><imum Values at TA"' 25°C
Power Dissipation Collector-to-Base
VrnR)CBO le" 100µA, !E" 0 20 60 v
Breakdown Voltage
Any one transistor 500 mW
mW Collector-to-Emitter
Total package 750
V(BRJCEO le= lmA, 18 "' o 15 24 v
Above 55oc Derate linearly 6.67 mWi°C Breakdown Voltage
Col lector-to·Substrate 1c1 = 1OOµA,1 8 = 0,
Ambient Temperature Range: VIBR)CIO 20 60
Breakdown Voltage
IE= 0
Operating - 55 to +-125
Emitter-to-Base
Storage . 65to+150
V(BRJEBO IE= 500µA,lc= a 6.9
Breakdown Voltage
Lead Temperature (Durmg Soldering)·
At distance 1/16" '1/32" (1.59 mm •0.79 mml Collector-Cutoff ·Current .1CEO VCE = 10V,1 8 =0 - 10 µA

from case lat 10 seconds max. 265 "C Collector-Cutoff.Current 1cso vcs"' 10V,IE=O - 1 µA
The following ratings apply for each transistor in the device DC Forward-Current ic 10mA 40 76
hFE VcE"' 3V
15 Transfer Ratio le= 50mA 40 75
Collector-to-Base Voltage {V CBO) 20 Base-to-Emitter Vo!tage VcE= 3V, le"' 10mA 0.65 0.74 0.85 v
VBE
Cotlector-to-Substrate Voltage (V ciol • . 20 v
Collector-to- Emitter
Emitter-to-Base Voltage IVEBO) Saturation Voltage I VcEsat le"' 50mA, 18 "' 5mA 0.40 0.70 v
CollP.ctor Current (lcl 100 mA For Transistors 01 and 02 (As a Differential Amplifier):
Base Current (I 8 ) 20 mA
Absolute Input Offset
•The collector of each transistor of the CA3083 1s isolated from the substrate by an m!egral diode The >llbstratr Voltage
]viol 1.2 5 mV
must be connec:ted to a voltage which 1s more negative than any collector voltage on order to mamwm iso!at•on VcE = 3V, le= lmA
between trans1s1ors and provide normal transistor action. To avo•d undesired couplong between tram1stors. the Absolute Input Offset
substrate terminal (51 should be mamtained at e•ther DC or signal (AC) ground A suitable
be used 10 establ1sh ground
capac11nr can
Current 11101 0.7 25 µA

TYPICAL STATIC CHARACTERISTICS

FOR EACH TRANSISTOR
100 COLLECTOR TO· EMITTER VOLTS lVcEl•3V I SET DC TRANSFER RATIO !hFEl•IO

k I 1
AMBIENT TEMPERATURE ITAi • 25 °C

J f

6 e I 4 6
COLLECTOR MILLIAMPERES 1 Ic I
o IO " 6 01()0
' ,0 ' . ',00 r; e io
COLLECTOR MILLIAMPERES l1cl COLLECTOR MILLIAMPERES nc1

Fig.2-hFE vs le Fig.3- VBEvslc Fig.4 - V CEsat vs IC at 25°C