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Basics of tense

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14 views

Document 666

Basics of tense

Uploaded by

shakazul1101
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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When the temperature of a pure semiconductor material increases,

several changes occur:

a) The resistance of the material: The resistance decreases. This is


because increasing temperature provides more thermal energy to the
semiconductor atoms, which in turn increases the number of charge
carriers (electrons and holes) available to conduct electricity.
Therefore, the material becomes less resistive.

b) The current-carrying capabilities of the material: The current-


carrying capability increases. With more charge carriers available due
to the increased temperature, the semiconductor can conduct more
current.

c) Some of the electrons in the valence band: Some electrons


gain enough energy to move from the valence band to the conduction
band. This transition from the valence band to the conduction band
means more free electrons are available for conduction, enhancing the
conductivity of the semiconductor.

6.The forbidden gap in semiconductors: Also known as the band


gap, it is the energy difference between the valence band (where
electrons are bound to atoms) and the conduction band (where
electrons are free to move and conduct electricity). In semiconductors,
this gap is relatively small, which allows electrons to jump from the
valence band to the conduction band when energy (like heat or light) is
supplied.

P-type and N-type semiconductors:

• P-type semiconductor: Created by adding trivalent impurities


(such as boron) to pure semiconductor material. This adds holes
(positive charge carriers) because the impurity atoms have fewer
electrons than the semiconductor atoms.

• N-type semiconductor: Formed by adding pentavalent impurities


(such as phosphorus) to the semiconductor, which introduces extra
electrons (negative charge carriers) because the impurity atoms have
more electrons than the semiconductor atoms.

Two types of charge carriers in semiconductors:

• Electrons: Negatively charged particles that move through the


conduction band.

• Holes: Positively charged carriers that represent the absence of an


electron in the valence band

Why silicon is widely used semiconductor material:

• Abundance: Silicon is the second most abundant element in the


Earth's crust.

• Cost-effective: It's relatively inexpensive to process and


manufacture.

• Properties: Silicon has an ideal band gap for many electronic


applications, good thermal stability, and forms a stable and protective
oxide layer (silicon dioxide).

Two types of semiconductors:

• Intrinsic semiconductors: Pure semiconductor materials without


any significant impurities.

• Extrinsic semiconductors: Semiconductor materials that have


been doped with impurities to change their electrical properties.

Why extrinsic semiconductors are used in electronics


manufacturing and not intrinsic semiconductors:

• Control over properties: Doping allows precise control over


electrical properties, such as conductivity.

• Enhanced performance: Extrinsic semiconductors have more


charge carriers, improving their performance in electronic devices

. Two types of impurities added to the semiconductor:

• Trivalent impurities: For creating P-type semiconductors (e.g.,


boron).

• Pentavalent impurities: For creating N-type semiconductors (e.g.,


phosphorus).

. Valence electrons in a pentavalent impurity atom: 5 valence


electrons.

15. Examples of pentavalent impurity atoms: Phosphorus (P),


Arsenic (As), Antimony (Sb).

16. Valence electrons in a trivalent impurity atom: 3 valence


electrons.

17. Examples of trivalent impurity atoms: Boron (B), Aluminum


(Al), Gallium (Ga).

18. Majority charge carriers in N-type semiconductor: Electrons.

19. Minority charge carriers in N-type semiconductor: Holes.

20. Majority charge carriers in P-type semiconductor: Holes.

21. Minority charge carriers in P-type semiconductor: Electrons.

23. Applying a reverse bias to a PN junction diode: Increases the


width of the depletion region, causing the diode to block current flow.
Only a very small leakage current flows.
25. Applying a forward bias to a PN junction diode: Reduces the
width of the depletion region, allowing current to flow easily from the P
side to the N side, thus the diode conducts.

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