Optoelectronics L1 L2
Optoelectronics L1 L2
Reference Texts
➢3. Physics of Semiconductor Devices, 3rd Ed., Sze & Ng, Wil
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Optoelectronics System
Applications
Sources Components Detectors
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Optoelectronic Devices
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Optoelectronic Devices
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Electromagnetic Spectrum
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Electromagnetic Spectrum
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Direct and Indirect Bandgap
(Photon emission)
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Fig. Basic recombination transitions in semiconductor. ED,
EA, Et, are donor-type, acceptor- type, and deep-level traps
respectively.
Isoelectronic Trap
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Optical absorption coefficients for various
photodetector materials
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Emission Spectra
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Fig. (a) Quantum efficiency of GaAs,,PX vs. alloy composition, with and
without isoelec- tronic impurity nitrogen. (b) Peak emission wavelength
vs. composition.
Types of Solids
Fig. Energy-band structures of (a) Si and (b) GaAs, where Eg is the energy bandgap. Plus signs (+)
indicate holes in the valence bands and minus signs (-) indicate electrons in the con- duction
bands.
The E-k Diagram of Si, Ge, InP and GaAs
The E-k Diagram of Ge, Si and GaAs
The E-k Diagram of AlAs, InAs and InP
➢ lattice mismatch,
➢ material parameter,
➢ properties of dislocations
Critical Thickness, hc
Varshni Equation
➢ At room temperature and under normal atmospheric
pressure, the values of the bandgap are 1.12 eV for Si and
1.42 eV for GaAs. These values are for high-purity
materials.
➢ For highly doped materials the bandgaps become smaller.
➢ Experimental results show that the bandgaps of most
semiconductors decrease with increasing temperature.
➢ The bandgap approaches 1.17 and 1.52 eV respectively for
Si and GaAs at 0 K.
➢ The variation of bandgaps with temperature can be
expressed approximately by a universal function
Varshni Equation
Energy bandgaps as a function of temperature
Varshni Equation
Si Ge GaAs
Eg (eV) 1.12 0.66 1.42
Varshni Equation
Electron Velocity
vs. Electric Field
Near the absorption edge, the absorption coefficient can be
expressed as:
Light
(
hf − E g )g intensity
Distance
hf = photon energy
1/
Eg = bandgap light-penetration depth
g = constant
➔ g=1/2 and 1/3 for allowed direct
transitions and forbidden direct transitions
➔ g=2 for indirect transitions where phonons
are involved
EEE459-L2
Model Energy Bands in III-V and IV Semiconductors
Measured ionization energies for varies impurities in (a) Si and (b) GaAs.
Levels below the gap center are measured from E, Levels above the gap
center are measured from E,. Solid bars represent donor levels and hollow
boxes represent acceptor levels
Phonon Spectra
Phonon Spectra
Phonon Spectra
Optical absorption of
a photon with hν>Eg;
(a) An EHP is created
during photon
absorption;
(b) the excited
electron gives up
energy to the lattice
by scattering events;
(c) the electron
recombines with a
hole in the valence
band
Absorption in Semiconductors
Absorption in Semiconductors