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Ee236 Lab12 Report 22b1273

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12 views6 pages

Ee236 Lab12 Report 22b1273

Uploaded by

keshavsamdani3
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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EE236: Electronic Devices Lab

Lab-12
Manisha Sahu, 22B1273
November 2, 2024

Sub-threshold Characteristics of N-channel


MOSFET

1 Aim of the experiment


• Obtain the sub-threshold Id vs Vgs characteristics of NMOS.

• Check the continuity of Id vs Vgs characteristics beyond the sub-threshold


region

• Employing the NMOS to be used as a Common Source Amplifier in


sub-threshold region

2 Design

1
Figure 1: circuit diagram for Transfer Characteristics of
NMOS,R1=10MΩ,1MΩ

Figure 2: circuit diagram for Graph continuity

Figure 3: circuit diagram for Common Source Amplifier using MOS FET
biased in Sub-Threshold

2
3 Experimental Observations, Graphs and Cal-
culations
3.1 Observations
3.1.1 Part1: Transfer Characteristics of NMOS
For part A, Formula for Id (in µA)(readings taken till Vout saturates):

Vout − Vinv
Id = µA (1)
10
Where Vinv =2V

Vgs (V) Vout (V) Id (µA)


0.01 2.00 0.000
0.07 2.01 0.001
0.25 2.02 0.002
0.31 2.03 0.003
0.33 2.04 0.004
0.34 2.06 0.006
0.36 2.08 0.008
0.41 2.17 0.017
0.43 2.43 0.043
0.46 2.85 0.085
0.49 3.52 0.152
0.52 5.08 0.308
0.53 5.87 0.387
0.55 7.46 0.546
0.56 8.15 0.615

Table 1: Values of Vgs , Vout , and Id for R1=10MΩ

For part B, Formula for Id (in µA)(readings taken till Vout saturates):

Vout − Vinv
Id = µA (2)
1
Where Vinv =2V

3
Vgs (V) Vout (V) Id (µA)
0.57 2.88 0.880
0.59 3.25 1.250
0.61 3.78 1.780
0.64 4.72 2.720
0.66 5.19 3.190
0.71 7.37 5.370
0.73 8.10 6.100

Table 2: Values of Vgs , Vout , and Id for R1=1MΩ

3.1.2 Part2: Graph continuity

Vgs (V) Id (µA)


0.74 7.03
0.84 17.2
0.97 35.8
1.00 58.3
1.10 88.6
1.20 123.7
1.30 169.1
1.40 214
1.50 285
1.60 341
1.70 408
1.80 469
1.90 569

Table 3: Values of Vgs and Id

4
3.1.3 Part3: Common Source Amplifier using MOSFET biased in
Sub-Threshold

Parameter Value
Vin(pp) 23 mV
Vout(pp) 41 mV
Gain 1.782609

Table 4: Input, Output, and Gain Values

3.2 Graph

Figure 4: Id vs Vgs

Figure 5: log(Id) vs Vgs

5
3.3 Calculations
From the log(Id ) vs Vgs graph, we got the slope as 5.174 and after further
calculations, we got Sub Threshold Swing, S as 193.265 mV/decade. From
the equation: S = 60 ηmV/decade, we get η as 3.2211

From the log(Id ) vs Vgs graph, we got y intercept as -3.058529 and we


get Off Current of NMOS as Iof f =0.873 nA. So the power dissipated in the
MOSFET is Pof f = Vds × Iof f = 2V*0.873nA= 1.746nW

4 Conclusion and inference


• We got η= 3.2211, which is less than 10

• We got off current of NMOS as 0.873nA

• We got power dissipated in off current conditions as 1.746nW, which


is in the safe range of a few nW

• The case of part2, the MOSFET is in linear region

• Gain of Common Source Amplifier in Sub-threshold Region of MOS-


FET obtained is 1.782609, which is poor but good enough to use as
an amplifier

5 Status of completion
Everything was completed in lab

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