Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Technical Data

AT-42035

Features different functions. The 20 emitter 35 micro-X Package

• High Output Power: finger interdigitated geometry
21.0 dBm Typical P1 dB at 2.0␣ GHz yields a medium sized transistor
20.5 dBm Typical P1 dB at 4.0␣ GHz with impedances that are easy to
match for low noise and medium
• High Gain at 1 dB
power applications. This device is
Compression:
designed for use in low noise,
14.0 dB Typical G1 dB at 2.0␣ GHz
wideband amplifier, mixer and
9.5 dB Typical G1 dB at 4.0␣ GHz
oscillator applications in the VHF,
• Low Noise Figure: UHF, and microwave frequencies.
1.9 dB Typical NFO at 2.0␣ GHz An optimum noise match near
• High Gain-Bandwidth 50␣ Ω up to 1 GHz, makes this
Product: 8.0 GHz Typical fT device easy to use as a low noise
• Cost Effective Ceramic amplifier.
Microstrip Package
The AT-42035 bipolar transistor is
fabricated using Hewlett- Packard’s
Description 10 GHz fT Self-Aligned-Transistor
Hewlett-Packard’s AT-42035 is a (SAT) process. The die is nitride
general purpose NPN bipolar passivated for surface protection.
transistor that offers excellent Excellent device uniformity,
high frequency performance. The performance and reliability are
AT-42035 is housed in a cost produced by the use of ion-
effective surface mount 100 mil implantation, self-alignment
micro-X package. The 4 micron techniques, and gold metalization
emitter-to-emitter pitch enables in the fabrication of this device.
this transistor to be used in many

4-159 5965-8911E
AT-42035 Absolute Maximum Ratings [1]
Absolute Thermal Resistance [2,5]:
Symbol Parameter Units Maximum θjc = 175°C/W
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
IC Collector Current mA 80
PT Power Dissipation [2,3] mW 600
Tj Junction Temperature °C 200
TSTG Storage Temperature[4] °C -65 to 200
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.7 mW/°C for TC > 95°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult
to solder into a circuit. After a device has been soldered into a circuit, it may
be safely stored up to 200°C.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Symbol Parameters and Test Conditions[1] Units Min. Typ. Max.
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.0 11.0
f = 4.0 GHz 5.0
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 2.0
f = 4.0 GHz 3.0
GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 10.0
fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 2.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.28
Notes:
1. For this test, the emitter is grounded.

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 AT-42035 Typical Performance, TA = 25°C
20 24 24
10 V

P1 dB (dBm)

P1 dB (dBm)
1.0 GHz 2.0 GHz 20 6V
16 20
4.0 GHz 16
4V
|S21E|2 GAIN (dB)

P1dB
P1dB 12
12 16
2.0 GHz
2.0 GHz
8 12 16

G1 dB (dB)

G1 dB (dB)
4.0 GHz 10 V
G1dB 14 6V
4 8 G1dB
4.0 GHz 4V
12

0 4 10
0 10 20 30 40 50 0 10 20 30 40 50 0 10 20 30 40 50
IC (mA) IC (mA) IC (mA)
Figure 1. Insertion Power Gain vs. Figure 2. Output Power and 1 dB Figure 3. Output Power and 1 dB
Collector Current and Frequency. Compressed Gain vs. Collector Compressed Gain vs. Collector
VCE = 8 V. Current and Frequency. VCE = 8 V. Current and Voltage. f = 2.0 GHz.

40 24

35 21
GA
30 18
MSG
25 15
GAIN (dB)

GAIN (dB)

20 12 4
MAG
15 9 3
|S21E|2
NFO (dB)

10 6 2
NFO
5 3 1

0 0 0
0.1 0.3 0.5 1.0 3.0 6.0 0.5 1.0 2.0 3.0 4.0 5.0
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Figure 5. Noise Figure and Associated
Maximum Available Gain and Gain vs. Frequency.
Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 10mA.
VCE = 8 V, IC = 35 mA.

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AT-42035 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14
0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27
1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29
1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33
2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38
2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42
3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51
3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63
4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72
4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80
5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87
5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94
6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105

AT-42035 Typical Scattering Parameters,

Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 35 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22
0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25
1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26
1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30
2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36
2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40
3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49
3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61
4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71
4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78
5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84
5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91
6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102
A model for this device is available in the DEVICE MODELS section.

AT-42035 Noise Parameters: VCE = 8 V, IC = 10 mA

Freq. NFO Γopt
RN/50
GHz dB Mag Ang
0.1 1.0 .04 10 0.13
0.5 1.1 .04 66 0.12
1.0 1.3 .07 150 0.12
2.0 2.0 .20 -178 0.12
4.0 3.0 .51 -110 0.36

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35 micro-X Package Dimensions
4 EMITTER
.085
2.15
.083 DIA.
2.11

BASE COLLECTOR
420

016
1 3

.020
.508
2 EMITTER

Notes:
(unless otherwise specified)
1. Dimensions are in
mm
.057 ± .010 .100
2. Tolerances
1.45 ± .25 2.54 in .xxx = ± 0.005
mm .xx = ± 0.13

.022 .455 ± .030

.56 11.54 ± .75
.006 ± .002
.15 ± .05

4-163