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TMS320F28379D, TMS320F28379D-Q1, TMS320F28378D, TMS320F28377D

TMS320F28377D-Q1, TMS320F28376D, TMS320F28375D, TMS320F28374D

SPRS880P – DECEMBER 2013 – REVISED FEBRUARY 2024

TMS320F2837xD Dual-Core Real-Time Microcontrollers

– Four Serial Communications Interfaces (SCI/
1 Features UART) (pin-bootable)
• Dual-core architecture – Two I2C interfaces (pin-bootable)
– Two TMS320C28x 32-bit CPUs • Analog subsystem
– 200MHz – Up to four Analog-to-Digital Converters (ADCs)
– IEEE 754 single-precision Floating-Point Unit • 16-bit mode
(FPU) – 1.1MSPS each (up to 4.4MSPS system
– Trigonometric Math Unit (TMU) throughput)
– Viterbi/Complex Math Unit (VCU-II) – Differential inputs
• Two programmable Control Law Accelerators – Up to 12 external channels
(CLAs) • 12-bit mode
– 200MHz – 3.5MSPS each (up to 14MSPS system
– IEEE 754 single-precision floating-point throughput)
instructions – Single-ended inputs
– Executes code independently of main CPU – Up to 24 external channels
• On-chip memory • Single Sample-and-Hold (S/H) on each ADC
– 512KB (256KW) or 1MB (512KW) of flash • Hardware-integrated post-processing of
(ECC-protected) ADC conversions
– 172KB (86KW) or 204KB (102KW) of RAM – Saturating offset calibration
(ECC-protected or parity-protected) – Error from setpoint calculation
– Dual-zone security supporting third-party – High, low, and zero-crossing compare,
development with interrupt capability
– Unique identification number – Trigger-to-sample delay capture
• Clock and system control – Eight windowed comparators with 12-bit Digital-
– Two internal zero-pin 10MHz oscillators to-Analog Converter (DAC) references
– On-chip crystal oscillator – Three 12-bit buffered DAC outputs
– Windowed watchdog timer module • Enhanced control peripherals
– Missing clock detection circuitry – 24 Pulse Width Modulator (PWM) channels with
• 1.2V core, 3.3V I/O design enhanced features
• System peripherals – 16 High-Resolution Pulse Width Modulator
– Two External Memory Interfaces (EMIFs) with (HRPWM) channels
ASRAM and SDRAM support • High resolution on both A and B channels of
– Dual 6-channel Direct Memory Access (DMA) 8 PWM modules
controllers • Dead-band support (on both standard and
– Up to 169 individually programmable, high resolution)
multiplexed General-Purpose Input/Output – Six Enhanced Capture (eCAP) modules
(GPIO) pins with input filtering – Three Enhanced Quadrature Encoder Pulse
– Expanded Peripheral Interrupt controller (ePIE) (eQEP) modules
– Multiple Low-Power Mode (LPM) support with – Eight Sigma-Delta Filter Module (SDFM) input
external wakeup channels, 2 parallel filters per channel
• Communications peripherals • Standard SDFM data filtering
– USB 2.0 (MAC + PHY) • Comparator filter for fast action for out of
– Support for 12-pin 3.3V-compatible Universal range
Parallel Port (uPP) interface • Configurable Logic Block (CLB)
– Two Controller Area Network (CAN) modules – Augments existing peripheral capability
(pin-bootable) – Supports position manager solutions
– Three high-speed (up to 50MHz) SPI ports (pin-
bootable)
– Two Multichannel Buffered Serial Ports
(McBSPs)

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TMS320F28379D, TMS320F28379D-Q1, TMS320F28378D, TMS320F28377D
TMS320F28377D-Q1, TMS320F28376D, TMS320F28375D, TMS320F28374D
SPRS880P – DECEMBER 2013 – REVISED FEBRUARY 2024 www.ti.com

• Functional Safety-Compliant
2 Applications
– Developed for functional safety applications
– Documentation available to aid ISO 26262 • Medium/short range radar
system design up to ASIL D; IEC 61508 up to • Traction inverter motor control
SIL 3; IEC 60730 up to Class C; and UL 1998 • HVAC large commercial motor control
up to Class 2 • Automated sorting equipment
– Hardware integrity up to ASIL B, SIL 2 • CNC control
• Safety-related certification • AC charging (pile) station
– ISO 26262 certified up to ASIL B and IEC • DC charging (pile) station
61508 certified up to SIL 2 by TUV SUD • EV charging station power module
• Package options: • Energy storage power conversion system (PCS)
– Lead-free, green packaging • Central inverter
– 337-ball New Fine Pitch Ball Grid Array • Solar power optimizer
(nFBGA) [ZWT suffix] • String inverter
– 176-pin PowerPAD™ Thermally Enhanced Low- • Inverter & motor control
Profile Quad Flatpack (HLQFP) [PTP suffix] • On-board (OBC) & wireless charger
– 100-pin PowerPAD Thermally Enhanced Thin • Linear motor segment controller
Quad Flatpack (HTQFP) [PZP suffix] • Servo drive control module
• Hardware Built-in Self Test (HWBIST) • AC-input BLDC motor drive
• Temperature options: • DC-input BLDC motor drive
• Industrial AC-DC
– T: –40°C to 105°C junction
• Three phase UPS
– S: –40°C to 125°C junction
– Q: –40°C to 125°C free-air
(AEC Q100 qualification for automotive
applications)
3 Description
C2000™ 32-bit microcontrollers are optimized for processing, sensing, and actuation to improve closed-loop
performance in real-time control applications such as industrial motor drives; solar inverters and digital power;
electrical vehicles and transportation; motor control; and sensing and signal processing. The C2000 line includes
the Premium performance MCUs and the Entry performance MCUs.
The TMS320F2837xD is a powerful 32-bit floating-point microcontroller unit (MCU) designed for advanced
closed-loop control applications such as industrial motor drives; solar inverters and digital power; electrical
vehicles and transportation; and sensing and signal processing. To accelerate application development, the
DigitalPower software development kit (SDK) for C2000 MCUs and the MotorControl software development
kit (SDK) for C2000™ MCUs are available. The F2837xD supports a new dual-core C28x architecture that
significantly boosts system performance. The integrated analog and control peripherals also let designers
consolidate control architectures and eliminate multiprocessor use in high-end systems.
The dual real-time control subsystems are based on TI’s 32-bit C28x floating-point CPUs, which provide
200MHz of signal processing performance in each core. The C28x CPUs are further boosted by the new TMU
accelerator, which enables fast execution of algorithms with trigonometric operations common in transforms and
torque loop calculations; and the VCU accelerator, which reduces the time for complex math operations common
in encoded applications.
The F2837xD microcontroller family features two CLA real-time control coprocessors. The CLA is an
independent 32-bit floating-point processor that runs at the same speed as the main CPU. The CLA responds to
peripheral triggers and executes code concurrently with the main C28x CPU. This parallel processing capability
can effectively double the computational performance of a real-time control system. By using the CLA to
service time-critical functions, the main C28x CPU is free to perform other tasks, such as communications and
diagnostics. The dual C28x+CLA architecture enables intelligent partitioning between various system tasks. For
example, one C28x+CLA core can be used to track speed and position, while the other C28x+CLA core can be
used to control torque and current loops.

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Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

TMS320F28375D TMS320F28374D
TMS320F28379D, TMS320F28379D-Q1, TMS320F28378D, TMS320F28377D
TMS320F28377D-Q1, TMS320F28376D, TMS320F28375D, TMS320F28374D
www.ti.com SPRS880P – DECEMBER 2013 – REVISED FEBRUARY 2024

The TMS320F2837xD supports up to 1MB (512KW) of onboard flash memory with error correction code (ECC)
and up to 204KB (102KW) of SRAM. Two 128-bit secure zones are also available on each CPU for code
protection.
Performance analog and control peripherals are also integrated on the F2837xD MCU to further enable
system consolidation. Four independent 16-bit ADCs provide precise and efficient management of multiple
analog signals, which ultimately boosts system throughput. The new sigma-delta filter module (SDFM) works
in conjunction with the sigma-delta modulator to enable isolated current shunt measurements. The Comparator
Subsystem (CMPSS) with windowed comparators allows for protection of power stages when current limit
conditions are exceeded or not met. Other analog and control peripherals include DACs, PWMs, eCAPs,
eQEPs, and other peripherals.
Peripherals such as EMIFs, CAN modules (ISO 11898-1/CAN 2.0B-compliant), and a new uPP interface extend
the connectivity of the F2837xD. The uPP interface is a new feature of the C2000™ MCUs and supports
high-speed parallel connection to FPGAs or other processors with similar uPP interfaces. Lastly, a USB 2.0 port
with MAC and PHY lets users easily add universal serial bus (USB) connectivity to their application.
Want to learn more about features that make C2000 MCUs the right choice for your real-time control system?
Check out The Essential Guide for Developing With C2000™ Real-Time Microcontrollers and visit the C2000™
real-time control MCUs page.
The Getting Started With C2000™ Real-Time Control Microcontrollers (MCUs) Getting Started Guide covers all
aspects of development with C2000 devices from hardware to support resources. In addition to key reference
documents, each section provides relevant links and resources to further expand on the information covered.
Ready to get started? Check out the TMDSCNCD28379D or LAUNCHXL-F28379D evaluation board sand
download C2000Ware.
To learn more about the C2000 MCUs, visit the C2000 Overview at www.ti.com/c2000.
Package Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2) BODY SIZE
ZWT (nFBGA, 337) 16mm × 16mm 16mm × 16mm
TMS320F28379D
PTP (HLQFP, 176) 26mm × 26mm 24mm × 24mm
TMS320F28378D PTP (HLQFP, 176) 26mm × 26mm 24mm × 24mm
ZWT (nFBGA, 337) 16mm × 16mm 16mm × 16mm
TMS320F28377D
PTP (HLQFP, 176) 26mm × 26mm 24mm × 24mm
ZWT (nFBGA, 337) 16mm × 16mm 16mm × 16mm
TMS320F28376D
PTP (HLQFP, 176) 26mm × 26mm 24mm × 24mm
ZWT (nFBGA, 337) 16mm × 16mm 16mm × 16mm
TMS320F28375D PTP (HLQFP, 176) 26mm × 26mm 24mm × 24mm
PZP (HTQFP, 100) 16mm × 16mm 14mm × 14mm
ZWT (nFBGA, 337) 16mm × 16mm 16mm × 16mm
TMS320F28374D
PTP (HLQFP, 176) 26mm × 26mm 24mm × 24mm

(1) For more information, see Mechanical, Packaging, and Orderable Information.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D
TMS320F28375D TMS320F28374D
TMS320F28379D, TMS320F28379D-Q1, TMS320F28378D, TMS320F28377D
TMS320F28377D-Q1, TMS320F28376D, TMS320F28375D, TMS320F28374D
SPRS880P – DECEMBER 2013 – REVISED FEBRUARY 2024 www.ti.com

3.1 Functional Block Diagram

The Functional Block Diagram shows the CPU system and associated peripherals.
User User
Configurable Configurable
Dual PSWD DCSM DCSM PSWD Dual
Code OTP OTP Code
Security 1K x 16 1K x 16 Security
Module Module
+ +
Emulation
FLASH FLASH Emulation
Secure Memories Code 256K x 16 256K x 16 Code
Secure Secure
shown in Red Security Security
Logic Logic CPU2.CLA1
(ECSL) PUMP (ECSL)
OTP/Flash OTP/Flash
Wrapper Wrapper

MEMCPU1 MEMCPU2
CPU1.M0 RAM 1Kx16 Low-Power
GPIO MUX
Mode Control
CPU1.CLA1 to CPU1 CPU2 to CPU2.CLA1
CPU1.CLA1 C28 CPU-1 CPU1.M1 RAM 1Kx16 C28 CPU-2 128x16 MSG RAM
128x16 MSG RAM
FPU FPU
CPU1 to CPU1.CLA1 CPU2.CLA1 to CPU2
128x16 MSG RAM VCU-II CPU2.M0 RAM 1Kx16 VCU-II 128x16 MSG RAM
TMU TMU Watchdog 1/2 INTOSC1
CPU2.M1 RAM 1Kx16
CPU1 Local Shared CPU2 Local Shared
6x 2Kx16 6x 2Kx16
LS0-LS5 RAMs Interprocessor LS0-LS5 RAMs
Communication
CPU1.D0 RAM 2Kx16 (IPC) CPU2.D0 RAM 2Kx16
Module Main PLL INTOSC2
CPU1.D1 RAM 2Kx16 CPU2.D1 RAM 2Kx16
WD Timer WD Timer
CPU1.CLA1 Data ROM NMI-WDT NMI-WDT CPU2.CLA1 Data ROM
(4Kx16) Global Shared (4Kx16) External Crystal or
16x 4Kx16 Oscillator
CPU Timer 0 GS0-GS15 RAMs CPU Timer 0
CPU Timer 1 CPU Timer 1
A5:0 16-/12-bit ADC Secure-ROM 32Kx16
CPU Timer 2 CPU Timer 2
Secure-ROM 32Kx16 Aux PLL
A Secure Secure
x4 CPU1 to CPU2 AUXCLKIN
B5:0 B Boot-ROM 32Kx16 ePIE 1Kx16 MSG RAM ePIE Boot-ROM 32Kx16
C Nonsecure (up to 192 (up to 192 Nonsecure
ADC TRST
C5:2 Analog D Result interrupts) CPU2 to CPU1 interrupts)
1Kx16 MSG RAM TCK
MUX Config Regs

CPU2.CLA1 Bus
CPU1.CLA1 Bus

D5:0 JTAG TDI

TMS
ADCIN14
Data Bus TDO
ADCIN15 Bridge CPU1.DMA CPU2.DMA

Comparator
DAC CPU1 Buses
Subsystem
(CMPSS) x3
CPU2 Buses

Data Bus Data Bus Data Bus Data Bus Data Bus
Peripheral Frame 1 Data Bus Bridge Bridge Bridge Peripheral Frame 2 Bridge Bridge Bridge

ePWM-1/../12 SCI- USB CAN- SPI- RAM

eCAP- I2C-A/B McBSP-
eQEP-1/2/3 SDFM-1/2 A/B/C/D Ctrl / A/B A/B/C uPP EMIF1 EMIF2 GPIO
HRPWM-1/../8 1/../6 (16L FIFO) A/B
(16L FIFO) PHY (32-MBOX) (16L FIFO)
(CPU1 only)
EXTSYNCOUT

UPPAD[7:0]
EPWMxB
EPWMxA

SCITXDx

CANTXx

UPPACLK
SPISIMOx
SPISOMIx

EM1CTLx

EM2CTLx
SPICLKx

UPPAWT
MCLKRx

UPPAEN
MCLKXx
EQEPxS

SPISTEx

UPPAST
EXTSYNCIN

USBDM
SDx_Dy

SDx_Cy
EQEPxI

MDXx
USBDP

MFSRx
SCIRXDx

MFSXx

EM1Dx
EM1Ax

EM2Dx
EM2Ax
CANRXx

GPIOn
EQEPxB
ECAPx

EQEPxA
TZ1-TZ6

MDRx
SDAx

SCLx

GPIO MUX, Input X-BAR, Output X-BAR

Figure 3-1. Functional Block Diagram

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Table of Contents
1 Features............................................................................1 7.6 C28x Processor...................................................... 197
2 Applications..................................................................... 2 7.7 Control Law Accelerator..........................................200
3 Description.......................................................................2 7.8 Direct Memory Access............................................ 201
3.1 Functional Block Diagram........................................... 4 7.9 Interprocessor Communication Module.................. 203
4 Device Comparison......................................................... 6 7.10 Boot ROM and Peripheral Booting........................204
4.1 Related Products........................................................ 8 7.11 Dual Code Security Module.................................. 207
5 Pin Configuration and Functions...................................9 7.12 Timers................................................................... 208
5.1 Pin Diagrams.............................................................. 9 7.13 Nonmaskable Interrupt With Watchdog Timer
5.2 Signal Descriptions................................................... 16 (NMIWD)................................................................... 208
5.3 Pins With Internal Pullup and Pulldown.................... 39 7.14 Watchdog.............................................................. 209
5.4 Pin Multiplexing.........................................................40 7.15 Configurable Logic Block (CLB)............................210
5.5 Connections for Unused Pins................................... 47 7.16 Functional Safety.................................................. 212
6 Specifications................................................................ 48 8 Applications, Implementation, and Layout............... 214
6.1 Absolute Maximum Ratings...................................... 48 8.1 Application and Implementation..............................214
6.2 ESD Ratings – Commercial...................................... 49 8.2 Key Device Features...............................................214
6.3 ESD Ratings – Automotive....................................... 49 8.3 Application Information........................................... 219
6.4 Recommended Operating Conditions.......................49 9 Device and Documentation Support..........................230
6.5 Power Consumption Summary................................. 50 9.1 Device and Development Support Tool
6.6 Electrical Characteristics...........................................55 Nomenclature............................................................ 230
6.7 Thermal Resistance Characteristics......................... 56 9.2 Markings................................................................. 231
6.8 Thermal Design Considerations................................58 9.3 Tools and Software................................................. 232
6.9 System...................................................................... 59 9.4 Documentation Support.......................................... 234
6.10 Analog Peripherals................................................101 9.5 Support Resources................................................. 235
6.11 Control Peripherals............................................... 132 9.6 Trademarks............................................................. 235
6.12 Communications Peripherals................................ 152 9.7 Electrostatic Discharge Caution..............................235
7 Detailed Description....................................................185 9.8 Glossary..................................................................235
7.1 Overview................................................................. 185 10 Revision History........................................................ 235
7.2 Functional Block Diagram....................................... 186 11 Mechanical, Packaging, and Orderable
7.3 Memory................................................................... 187 Information.................................................................. 238
7.4 Identification............................................................195 11.1 Packaging Information.......................................... 238
7.5 Bus Architecture – Peripheral Connectivity.............196

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 5

4 Device Comparison
Table 4-1 lists the features of each 2837xD device.
Table 4-1. Device Comparison
28379D 28377D
FEATURE(1) 28378D 28376D 28375D 28374D
28379D-Q1 28377D-Q1
Package Type
(ZWT is an nFBGA package. 337-Ball 176-Pin 176-Pin 337-Ball 176-Pin 337-Ball 176-Pin 337-Ball 176-Pin 100-Pin 337-Ball 176-Pin
PTP is an HLQFP package. ZWT PTP PTP ZWT PTP ZWT PTP ZWT PTP PZP ZWT PTP
PZP is an HTQFP package.)
Processor and Accelerators
Number 2
Frequency (MHz) 200
C28x Floating-Point Unit (FPU) Yes
VCU-II Yes
TMU – Type 0 Yes
Number 2
CLA – Type 1
Frequency (MHz) 200
6-Channel DMA – Type 0 2
Memory
1MB (512KW) 1MB (512KW) 1MB (512KW) 512KB (256KW) 512KB (256KW)
1MB (512KW)
Flash (16-bit words) [512KB (256KW) [512KB (256KW) [512KB (256KW) [256KB (128KW) [256KB (128KW)
[512KB (256KW) per CPU]
per CPU] per CPU] per CPU] per CPU] per CPU]
Dedicated and Local Shared 72KB (36KW)
RAM [36KB (18KW) per CPU]

RAM (16-bit Global Shared RAM 128KB (64KW) 128KB (64KW) 128KB (64KW) 96KB (48KW) 128KB (64KW) 96KB (48KW)
words) 4KB (2KW)
Message RAM
[2KB (1KW) per CPU]
Total RAM 204KB (102KW) 204KB (102KW) 204KB (102KW) 172KB (86KW) 204KB (102KW) 172KB (86KW)
Code security for on-chip flash, RAM, and OTP
Yes
blocks
Boot ROM Yes
System
Configurable Logic Block (CLB) 4 tiles No
32-bit CPU timers 6 (3 per CPU)
Watchdog timers 2 (1 per CPU)
Nonmaskable Interrupt Watchdog (NMIWD) timers 2 (1 per CPU)
Crystal oscillator/External clock input 1
0-pin internal oscillator 2
I/O pins (shared) GPIO 169 97 97 169 97 169 97 169 97 41 169 97
External interrupts 5
EMIF1 (16-bit or 32-bit) 1 1 – 1
EMIF
EMIF2 (16-bit) 1 – – 1 – 1 – 1 – – 1 –
Analog Peripherals
MSPS 1.1 – 1.1 –
Conversion Time (ns)(2) 915 – 915 –
ADC 16-bit mode
Input pins 24 20 – 24 20 24 20 –
Channels (differential) 12 9 – 12 9 12 9 –
MSPS 3.5
Conversion Time (ns)(2) 280
ADC 12-bit mode
Input pins 24 20 20 24 20 24 20 24 20 14 24 20
Channels (single-ended) 24 20 20 24 20 24 20 24 20 14 24 20
Number of 16-bit or 12-bit ADCs 4 – 4 –
Number of 12-bit only ADCs – 4 – 4 2 4
Temperature sensor 1
CMPSS (each CMPSS has two comparators and
8 8 4 8
two internal DACs)
Buffered DAC 3

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Table 4-1. Device Comparison (continued)

28379D 28377D
FEATURE(1) 28378D 28376D 28375D 28374D
28379D-Q1 28377D-Q1
Package Type
(ZWT is an nFBGA package. 337-Ball 176-Pin 176-Pin 337-Ball 176-Pin 337-Ball 176-Pin 337-Ball 176-Pin 100-Pin 337-Ball 176-Pin
PTP is an HLQFP package. ZWT PTP PTP ZWT PTP ZWT PTP ZWT PTP PZP ZWT PTP
PZP is an HTQFP package.)
Control Peripherals (3)
eCAP inputs – Type 0 6
Enhanced Pulse Width Modulator (ePWM)
24 24 15 24
channels – Type 4
eQEP modules – Type 0 3 3 2 3
High-resolution ePWM channels – Type 4 16 16 9 16
SDFM channels – Type 0 8 8 6 8
Communication Peripherals (3)
Controller Area Network (CAN) – Type 0(4) 2
Inter-Integrated Circuit (I2C) – Type 0 2
Multichannel Buffered Serial Port (McBSP) –
2
Type 1
Serial Communications Interface (SCI) - Type 0
4 4 3 4
(UART Compatible)
Serial Peripheral Interface (SPI) – Type 2 3
USB – Type 0 1
uPP – Type 0 1
Temperature and Qualification
T: –40°C to 105°C Yes No Yes Yes No Yes
Junction
S: –40°C to 125°C Yes
Temperature (TJ)
Q: –40°C to 150°C(5) Yes Yes No Yes No
Free-Air
Q: –40°C to 125°C(5) Yes Yes No Yes No
Temperature (TA)

(1) A type change represents a major functional feature difference in a peripheral module. Within a peripheral type, there may be minor
differences between devices that do not affect the basic functionality of the module. For more information, see the C2000 Real-Time
Control Peripherals Reference Guide.
(2) Time between start of sample-and-hold window to start of sample-and-hold window of the next conversion.
(3) For devices that are available in more than one package, the peripheral count listed in the smaller package is reduced because the
smaller package has less device pins available. The number of peripherals internally present on the device is not reduced compared
to the largest package offered within a part number. See Section 5 to identify which peripheral instances are accessible on pins in the
smaller package.
(4) The CAN module uses the IP known as D_CAN. This document uses the names CAN and D_CAN interchangeably to reference this
peripheral.
(5) The letter Q refers to AEC Q100 qualification for automotive applications.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 7

4.1 Related Products

For information about similar products, see the following links:
TMS320F2837xD Microcontrollers
The F2837xD series sets a new standard for performance with dual subsystems. Each subsystem consists of
a C28x CPU and a parallel control law accelerator (CLA), each running at 200 MHz. Enhancing performance
are TMU and VCU accelerators. New capabilities include multiple 16-bit/12-bit mode ADCs, DAC, Sigma-Delta
filters, USB, configurable logic block (CLB), on-chip oscillators, and enhanced versions of all peripherals. The
F2837xD is available with up to 1MB of Flash. It is available in a 176-pin QFP or 337-pin BGA package.
TMS320F2837xS Microcontrollers
The F2837xS series is a pin-to-pin compatible version of F2837xD but with only one C28x-CPU-and-CLA
subsystem enabled. It is also available in a 100-pin QFP to enable compatibility with the TMS320F2807x series.

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5 Pin Configuration and Functions

5.1 Pin Diagrams
Figure 5-1 to Figure 5-4 show the terminal assignments on the 337-ball ZWT New Fine Pitch Ball Grid Array.
Each figure shows a quadrant of the terminal assignments. Figure 5-5 shows the pin assignments on the 176-pin
PTP PowerPAD Thermally Enhanced Low-Profile Quad Flatpack. Figure 5-6 shows the pin assignments on the
100-pin PZP PowerPAD Thermally Enhanced Thin Quad Flatpack.
1 2 3 4 5 6 7 8 9 10

W VSSA ADCINB1 ADCINB3 ADCINB5 VREFHIB VREFLOD VSS VDDIO GPIO128 GPIO116 W

V VREFHIA ADCINB0 ADCINB2 ADCINB4 VREFHID VREFLOB VSSA GPIO124 GPIO127 GPIO131 V

U ADCINA0 ADCINA2 ADCINA4 ADCIN15 ADCIND1 ADCIND3 ADCIND5 GPIO123 GPIO126 GPIO130 U

T ADCINA1 ADCINA3 ADCINA5 ADCIN14 ADCIND0 ADCIND2 ADCIND4 GPIO122 GPIO125 GPIO129 T

R VREFHIC VREFLOA ADCINC2 ADCINC4 VSSA VDDA VSS VSS VDDIO VDD R

P VSSA VREFLOC ADCINC3 ADCINC5 VSSA VDDA VSS VSS VDDIO VDD P

7 8 9 10
N VSS GPIO109 GPIO114 GPIO113 VSS VSS N

M VDDIO GPIO110 GPIO112 GPIO111 VDDIO VDDIO M VSS VSS VSS M

L GPIO27 GPIO106 GPIO107 GPIO108 VSS VSS L VSS VSS VSS L

K GPIO26 GPIO25 GPIO24 GPIO23 VDD VDD K VSS VSS VSS K

1 2 3 4 5 6 8 9 10

A. Only the GPIO function is shown on GPIO terminals. See Section 5.2.1 for the complete, muxed signal name.

Figure 5-1. 337-Ball ZWT New Fine Pitch Ball Grid Array (Bottom View) – [Quadrant A]

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 9

11 12 13 14 15 16 17 18 19

W GPIO29 FLT1 TDI TMS TDO GPIO121 GPIO39 GPIO132 VSS W

V GPIO28 GPIO115 FLT2 TRST TCK GPIO36 GPIO40 GPIO134 VDDIO V

U GPIO31 GPIO117 GPIO32 GPIO34 GPIO120 GPIO37 GPIO41 GPIO135 ERRORSTS U

T GPIO30 GPIO118 GPIO33 GPIO35 GPIO119 GPIO38 GPIO136 GPIO137 GPIO138 T

R VDD3VFL VDD3VFL VDD VSS VSS GPIO48 GPIO49 GPIO50 GPIO51 R

P VSS VSS VDD VSS VSS GPIO52 GPIO53 GPIO54 GPIO55 P

11 12 13
N VDDIO VDDIO GPIO56 GPIO58 GPIO57 GPIO139 N

M VSS VSS M VSS VSS GPIO59 GPIO60 GPIO141 GPIO140 M

L VSS VSS L VDDIO VDDIO GPIO61 GPIO64 VSS GPIO142 L

K VSS VSS K VSS VSS GPIO65 GPIO66 GPIO44 GPIO45 K

11 12 14 15 16 17 18 19

A. Only the GPIO function is shown on GPIO terminals. See Section 5.2.1 for the complete, muxed signal name.

Figure 5-2. 337-Ball ZWT New Fine Pitch Ball Grid Array (Bottom View) – [Quadrant B]

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11 12 14 15 16 17 18 19

J VSS VSS J VDD VDD GPIO63 GPIO62 VREGENZ X2 J

H VSS VSS H VSS VSS VDDOSC VDDOSC VSSOSC VSSOSC H

G VDD VDD VSS VSS GPIO133 X1 G

11 12 13

F VDD VSS VDDIO VSS VSS VDDIO GPIO144 GPIO143 XRS F

E VDD VSS VDDIO VSS VSS VDDIO GPIO145 GPIO47 GPIO46 E

D GPIO87 GPIO156 GPIO152 GPIO148 GPIO80 GPIO75 GPIO147 GPIO146 GPIO42 D

C GPIO86 GPIO155 GPIO151 GPIO83 GPIO79 GPIO76 GPIO74 GPIO68 GPIO43 C

B GPIO85 GPIO154 GPIO150 GPIO82 GPIO78 GPIO72 GPIO71 GPIO69 GPIO67 B

A GPIO84 GPIO153 GPIO149 GPIO81 GPIO77 GPIO73 GPIO70 VDDIO VSS A

11 12 13 14 15 16 17 18 19
A. Only the GPIO function is shown on GPIO terminals. See Section 5.2.1 for the complete, muxed signal name.

Figure 5-3. 337-Ball ZWT New Fine Pitch Ball Grid Array (Bottom View) – [Quadrant C]

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1 2 3 4 5 6 8 9 10

J GPIO103 GPIO104 GPIO105 GPIO22 VSS VSS J VSS VSS VSS J

H GPIO100 GPIO101 GPIO102 NC VDDIO VDDIO H VSS VSS VSS H

G GPIO99 GPIO8 GPIO9 VDDIO VDDIO VDDIO G

7 8 9 10

F GPIO98 GPIO20 GPIO21 VDDIO VSS VSS VDDIO VSS VDD VDDIO F

E GPIO16 GPIO17 GPIO18 GPIO19 VSS VSS VDDIO VSS VDD VDDIO E

D GPIO13 GPIO14 GPIO15 GPIO168 GPIO166 GPIO89 GPIO5 GPIO1 GPIO162 GPIO159 D

C GPIO11 GPIO12 GPIO96 GPIO167 GPIO165 GPIO88 GPIO4 GPIO0 GPIO161 GPIO158 C

B VDDIO GPIO10 GPIO95 GPIO93 GPIO91 GPIO7 GPIO3 GPIO164 GPIO160 GPIO157 B

A VSS GPIO97 GPIO94 GPIO92 GPIO90 GPIO6 GPIO2 GPIO163 VDDIO VSS A

1 2 3 4 5 6 7 8 9 10
A. Only the GPIO function is shown on GPIO terminals. See Section 5.2.1 for the complete, muxed signal name.

Figure 5-4. 337-Ball ZWT New Fine Pitch Ball Grid Array (Bottom View) – [Quadrant D]

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ERRORSTS
VREGENZ
GPIO133
VDDOSC

VDDOSC
VSSOSC
GPIO67
GPIO43
GPIO42
GPIO47
GPIO46

GPIO45

GPIO44
GPIO66
GPIO65
GPIO64
GPIO63
GPIO62
GPIO61

GPIO60
GPIO59
GPIO58
GPIO57
GPIO56
GPIO55

GPIO54
GPIO53
GPIO52
GPIO51
GPIO50
GPIO49

GPIO48
GPIO41
VDDIO

VDDIO

VDDIO
XRS
VDD

VDD
X1

X2
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
GPIO68 133 88 VDDIO
GPIO69 134 87 GPIO40
GPIO70 135 86 GPIO39
GPIO71 136 85 GPIO38
VDD 137 84 GPIO37
VDDIO 138 83 GPIO36
GPIO72 139 82 VDDIO
GPIO73 140 81 TCK
GPIO74 141 80 TMS
GPIO75 142 79 TRST
GPIO76 143 78 TDO
GPIO77 144 77 TDI
GPIO78 145 76 VDD
GPIO79 146 75 VDDIO
VDDIO 147 74 FLT2
GPIO80 148 73 FLT1
GPIO81 149 72 VDD3VFL
GPIO82 150 71 GPIO35
GPIO83 151 70 GPIO34
VDDIO 152 69 GPIO33
VDD 153 68 VDDIO
GPIO84 154 67 GPIO32
GPIO85 155 66 GPIO31
GPIO86 156 65 GPIO29
GPIO87 157 64 GPIO28
VDD 158 63 GPIO30
VDDIO 159 62 VDDIO
GPIO0 160 61 VDD
GPIO1 161 60 ADCIND4
GPIO2 162 59 ADCIND3
GPIO3 163 58 ADCIND2
GPIO4 164 57 ADCIND1
GPIO5 165 56 ADCIND0
GPIO6 166 55 VREFHID
GPIO7 167 54 VDDA
VDDIO 168 53 VREFHIB
VDD 169 52 VSSA
GPIO88 170 51 VREFLOD
GPIO89 171 50 VREFLOB
GPIO90 172 49 ADCINB3
GPIO91 173 48 ADCINB2
GPIO92 174 47 ADCINB1
GPIO93 175 46 ADCINB0
GPIO94 176 45 ADCIN15
10
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
11
1
2
3
4
5
6
7
8
9
GPIO11

GPIO21

ADCINA1
GPIO12

GPIO22

ADCINC2

ADCINA2
GPIO10

GPIO14

GPIO20

VDD

GPIO24

ADCINC4

ADCINA4

ADCINA0
ADCIN14
GPIO13

GPIO16
GPIO17

GPIO23

GPIO26
GPIO27
GPIO18

GPIO19

GPIO99
GPIO8
GPIO9

ADCINC3

ADCINA3
VDDIO

GPIO15

VDDIO

GPIO25
VDDIO

ADCINA5
VREFLOC

VREFHIC
VREFLOA
VSSA

VDDA
VREFHIA

A. Only the GPIO function is shown on GPIO pins. See Section 5.2.1 for the complete, muxed signal name.

Figure 5-5. 176-Pin PTP PowerPAD Thermally Enhanced Low-Profile Quad Flatpack (Top View)

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VREGENZ
GPIO69
GPIO43
GPIO42

GPIO66
GPIO65
GPIO64
GPIO63
GPIO62
GPIO61

GPIO60
GPIO59
GPIO58
GPIO41
VDDOSC

VDDOSC
VSSOSC
VDDIO

VDDIO

VDDIO
XRS
VDD

VDD
X1

X2
71

51
72

52
74

64
73

54
69
68
67

53
59
58
57
75

55
GPIO70 76 50 TCK
GPIO71 77 49 TMS
VDD 78 48 TRST
VDDIO 79 47 TDO
GPIO72 80 46 TDI
GPIO73 81 45 VDD
GPIO78 82 44 VDDIO
VDDIO 83 43 FLT2
VDD 84 42 FLT1
GPIO84 85 41 VDD3VFL
GPIO85 86 40 VDDIO
GPIO86 87 39 VDD
GPIO87 88 38 VDDA
VDD 89 37 VREFHIB
VDDIO 90 36 VSSA
GPIO2 91 35 VSSA
GPIO3 92 34 VREFLOB
GPIO4 93 33 ADCINB5
VDDIO 94 32 ADCINB4
VDD 95 31 ADCINB3
GPIO89 96 30 ADCINB2
GPIO90 97 29 ADCINB1
GPIO91 98 28 ADCINB0
GPIO92 99 27 ADCIN15
GPIO10 100 26 ADCIN14
10

12
13
14
15
16
17
18
19
20
21
22
23
24
25
11
1
2
3
4
5
6
7
8
9
GPIO11

GPIO21

ADCINA1
GPIO12

ADCINA2
GPIO14

GPIO20

ADCINA4

ADCINA0
GPIO13

GPIO16
GPIO17
GPIO18

GPIO19

GPIO99

ADCINA3
VDD
GPIO15

ADCINA5
VDDIO

VDDIO

VSSA/VREFLOA
VDDA
VREFHIA

A. Only the GPIO function is shown on GPIO pins. See Section 5.2.1 for the complete, muxed signal name.

Figure 5-6. 100-Pin PZP PowerPAD HTQFP (Top View)

Note
The exposed lead frame die pad of the PowerPAD™ package serves two functions: to remove heat
from the die and to provide ground path for the digital ground (analog ground is provided through
dedicated pins). Thus, the PowerPAD should be soldered to the ground (GND) plane of the PCB
because this will provide both the digital ground path and good thermal conduction path. To make
optimum use of the thermal efficiencies designed into the PowerPAD package, the PCB must be
designed with this technology in mind. A thermal land is required on the surface of the PCB directly
underneath the body of the PowerPAD. The thermal land should be soldered to the exposed lead
frame die pad of the PowerPAD package; the thermal land should be as large as needed to dissipate
the required heat. An array of thermal vias should be used to connect the thermal pad to the internal
GND plane of the board. See PowerPAD™ Thermally Enhanced Package for more details on using
the PowerPAD package.

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Note
PCB footprints and schematic symbols are available for download in a vendor-neutral format, which
can be exported to the leading EDA CAD/CAE design tools. See the CAD/CAE Symbols section in the
product folder for each device, under the Packaging section. These footprints and symbols can also
be searched for at https://webench.ti.com/cad/.

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5.2 Signal Descriptions

Section 5.2.1 describes the signals. The GPIO function is the default at reset, unless otherwise mentioned.
The peripheral signals that are listed under them are alternate functions. Some peripheral functions may not be
available in all devices. See Table 4-1 for details. All GPIO pins are I/O/Z and have an internal pullup, which can
be selectively enabled or disabled on a per-pin basis. This feature only applies to the GPIO pins. The pullups are
not enabled at reset.
5.2.1 Signal Descriptions
Table 5-1. Signal Descriptions
TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
ADC, DAC, AND COMPARATOR SIGNALS
ADC-A high reference. This voltage must be driven into
the pin from external circuitry. Place at least a 1-µF
capacitor on this pin for the 12-bit mode, or at least a
VREFHIA V1 37 19 I 22-µF capacitor for the 16-bit mode. This capacitor should
be placed as close to the device as possible between the
VREFHIA and VREFLOA pins.
NOTE: Do not load this pin externally.
ADC-B high reference. This voltage must be driven into
the pin from external circuitry. Place at least a 1-µF
capacitor on this pin for the 12-bit mode, or at least a
VREFHIB W5 53 37 I 22-µF capacitor for the 16-bit mode. This capacitor should
be placed as close to the device as possible between the
VREFHIB and VREFLOB pins.
NOTE: Do not load this pin externally.
ADC-C high reference. This voltage must be driven into
the pin from external circuitry. Place at least a 1-µF
capacitor on this pin for the 12-bit mode, or at least a
VREFHIC R1 35 – I 22-µF capacitor for the 16-bit mode. This capacitor should
be placed as close to the device as possible between the
VREFHIC and VREFLOC pins.
NOTE: Do not load this pin externally.
ADC-D high reference. This voltage must be driven into
the pin from external circuitry. Place at least a 1-µF
capacitor on this pin for the 12-bit mode, or at least a
VREFHID V5 55 – I 22-µF capacitor for the 16-bit mode. This capacitor should
be placed as close to the device as possible between the
VREFHID and VREFLOD pins.
NOTE: Do not load this pin externally.
ADC-A low reference.
On the PZP package, pin 17 is double-bonded to VSSA
VREFLOA R2 33 17 I
and VREFLOA. On the PZP package, pin 17 must be
connected to VSSA on the system board.
VREFLOB V6 50 34 I ADC-B low reference
VREFLOC P2 32 – I ADC-C low reference
VREFLOD W6 51 – I ADC-D low reference
ADCIN14 I Input 14 to all ADCs. This pin can be used as a general-
purpose ADCIN pin or it can be used to calibrate all
T4 44 26 ADCs together (either single-ended or differential) from an
external reference.
CMPIN4P I Comparator 4 positive input
ADCIN15 I Input 15 to all ADCs. This pin can be used as a general-
purpose ADCIN pin or it can be used to calibrate all
U4 45 27 ADCs together (either single-ended or differential) from an
external reference.
CMPIN4N I Comparator 4 negative input

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
ADCINA0 I ADC-A input 0. There is a 50-kΩ internal pulldown on
this pin in both an ADC input or DAC output mode which
U1 43 25 cannot be disabled.
DACOUTA O DAC-A output
ADCINA1 I ADC-A input 1. There is a 50-kΩ internal pulldown on
this pin in both an ADC input or DAC output mode which
T1 42 24 cannot be disabled.
DACOUTB O DAC-B output
ADCINA2 I ADC-A input 2
U2 41 23
CMPIN1P I Comparator 1 positive input
ADCINA3 I ADC-A input 3
T2 40 22
CMPIN1N I Comparator 1 negative input
ADCINA4 I ADC-A input 4
U3 39 21
CMPIN2P I Comparator 2 positive input
ADCINA5 I ADC-A input 5
T3 38 20
CMPIN2N I Comparator 2 negative input
ADCINB0 I ADC-B input 0. There is a 100-pF capacitor to VSSA
on this pin in both ADC input or DAC reference mode
which cannot be disabled. If this pin is being used as
a reference for the on-chip DACs, place at least a 1-µF
capacitor on this pin.
V2 46 28
VDAC I Optional external reference voltage for on-chip DACs.
There is a 100-pF capacitor to VSSA on this pin in both
ADC input or DAC reference mode which cannot be
disabled. If this pin is being used as a reference for the
on-chip DACs, place at least a 1-µF capacitor on this pin.
ADCINB1 I ADC-B input 1. There is a 50-kΩ internal pulldown on
this pin in both an ADC input or DAC output mode which
W2 47 29 cannot be disabled.
DACOUTC O DAC-C output
ADCINB2 I ADC-B input 2
V3 48 30
CMPIN3P I Comparator 3 positive input
ADCINB3 I ADC-B input 3
W3 49 31
CMPIN3N I Comparator 3 negative input
ADCINB4 V4 – 32 I ADC-B input 4
ADCINB5 W4 – 33 I ADC-B input 5
ADCINC2 I ADC-C input 2
R3 31 –
CMPIN6P I Comparator 6 positive input
ADCINC3 I ADC-C input 3
P3 30 –
CMPIN6N I Comparator 6 negative input
ADCINC4 I ADC-C input 4
R4 29 –
CMPIN5P I Comparator 5 positive input
ADCINC5 I ADC-C input 5
P4 – –
CMPIN5N I Comparator 5 negative input
ADCIND0 I ADC-D input 0
T5 56 –
CMPIN7P I Comparator 7 positive input
ADCIND1 I ADC-D input 1
U5 57 –
CMPIN7N I Comparator 7 negative input

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
ADCIND2 I ADC-D input 2
T6 58 –
CMPIN8P I Comparator 8 positive input
ADCIND3 I ADC-D input 3
U6 59 –
CMPIN8N I Comparator 8 negative input
ADCIND4 T7 60 – I ADC-D input 4
ADCIND5 U7 – – I ADC-D input 5
GPIO AND PERIPHERAL SIGNALS
GPIO0 0, 4, 8, 12 I/O General-purpose input/output 0
EPWM1A 1 C8 160 – O Enhanced PWM1 output A (HRPWM-capable)
SDAA 6 I/OD I2C-A data open-drain bidirectional port
GPIO1 0, 4, 8, 12 I/O General-purpose input/output 1
EPWM1B 1 O Enhanced PWM1 output B (HRPWM-capable)
D8 161 –
MFSRB 3 I/O McBSP-B receive frame synch
SCLA 6 I/OD I2C-A clock open-drain bidirectional port
GPIO2 0, 4, 8, 12 I/O General-purpose input/output 2
EPWM2A 1 O Enhanced PWM2 output A (HRPWM-capable)
A7 162 91
OUTPUTXBAR1 5 O Output 1 of the output XBAR
SDAB 6 I/OD I2C-B data open-drain bidirectional port
GPIO3 0, 4, 8, 12 I/O General-purpose input/output 3
EPWM2B 1 O Enhanced PWM2 output B (HRPWM-capable)
OUTPUTXBAR2 2 O Output 2 of the output XBAR
B7 163 92
MCLKRB 3 I/O McBSP-B receive clock
OUTPUTXBAR2 5 O Output 2 of the output XBAR
SCLB 6 I/OD I2C-B clock open-drain bidirectional port
GPIO4 0, 4, 8, 12 I/O General-purpose input/output 4
EPWM3A 1 O Enhanced PWM3 output A (HRPWM-capable)
C7 164 93
OUTPUTXBAR3 5 O Output 3 of the output XBAR
CANTXA 6 O CAN-A transmit
GPIO5 0, 4, 8, 12 I/O General-purpose input/output 5
EPWM3B 1 O Enhanced PWM3 output B (HRPWM-capable)
MFSRA 2 D7 165 – I/O McBSP-A receive frame synch
OUTPUTXBAR3 3 O Output 3 of the output XBAR
CANRXA 6 I CAN-A receive
GPIO6 0, 4, 8, 12 I/O General-purpose input/output 6
EPWM4A 1 O Enhanced PWM4 output A (HRPWM-capable)
OUTPUTXBAR4 2 O Output 4 of the output XBAR
A6 166 –
EXTSYNCOUT 3 O External ePWM synch pulse output
EQEP3A 5 I Enhanced QEP3 input A
CANTXB 6 O CAN-B transmit

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO7 0, 4, 8, 12 I/O General-purpose input/output 7
EPWM4B 1 O Enhanced PWM4 output B (HRPWM-capable)
MCLKRA 2 I/O McBSP-A receive clock
B6 167 –
OUTPUTXBAR5 3 O Output 5 of the output XBAR
EQEP3B 5 I Enhanced QEP3 input B
CANRXB 6 I CAN-B receive
GPIO8 0, 4, 8, 12 I/O General-purpose input/output 8
EPWM5A 1 O Enhanced PWM5 output A (HRPWM-capable)
CANTXB 2 O CAN-B transmit
G2 18 –
ADCSOCAO 3 O ADC start-of-conversion A output for external ADC
EQEP3S 5 I/O Enhanced QEP3 strobe
SCITXDA 6 O SCI-A transmit data
GPIO9 0, 4, 8, 12 I/O General-purpose input/output 9
EPWM5B 1 O Enhanced PWM5 output B (HRPWM-capable)
SCITXDB 2 O SCI-B transmit data
G3 19 –
OUTPUTXBAR6 3 O Output 6 of the output XBAR
EQEP3I 5 I/O Enhanced QEP3 index
SCIRXDA 6 I SCI-A receive data
GPIO10 0, 4, 8, 12 I/O General-purpose input/output 10
EPWM6A 1 O Enhanced PWM6 output A (HRPWM-capable)
CANRXB 2 I CAN-B receive
ADCSOCBO 3 O ADC start-of-conversion B output for external ADC
B2 1 100
EQEP1A 5 I Enhanced QEP1 input A
SCITXDB 6 O SCI-B transmit data
UPP-WAIT 15 I/O Universal parallel port wait. Receiver asserts to request a
pause in transfer.
GPIO11 0, 4, 8, 12 I/O General-purpose input/output 11
EPWM6B 1 O Enhanced PWM6 output B (HRPWM-capable)
SCIRXDB 2, 6 I SCI-B receive data
OUTPUTXBAR7 3 C1 2 1 O Output 7 of the output XBAR
EQEP1B 5 I Enhanced QEP1 input B
UPP-START 15 I/O Universal parallel port start. Transmitter asserts at start of
DMA line.
GPIO12 0, 4, 8, 12 I/O General-purpose input/output 12
EPWM7A 1 O Enhanced PWM7 output A (HRPWM-capable)
CANTXB 2 O CAN-B transmit
MDXB 3 O McBSP-B transmit serial data
C2 4 3
EQEP1S 5 I/O Enhanced QEP1 strobe
SCITXDC 6 O SCI-C transmit data
UPP-ENA 15 I/O Universal parallel port enable. Transmitter asserts while
data bus is active.

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO13 0, 4, 8, 12 I/O General-purpose input/output 13
EPWM7B 1 O Enhanced PWM7 output B (HRPWM-capable)
CANRXB 2 I CAN-B receive
MDRB 3 D1 5 4 I McBSP-B receive serial data
EQEP1I 5 I/O Enhanced QEP1 index
SCIRXDC 6 I SCI-C receive data
UPP-D7 15 I/O Universal parallel port data line 7
GPIO14 0, 4, 8, 12 I/O General-purpose input/output 14
EPWM8A 1 O Enhanced PWM8 output A (HRPWM-capable)
SCITXDB 2 O SCI-B transmit data
D2 6 5
MCLKXB 3 I/O McBSP-B transmit clock
OUTPUTXBAR3 6 O Output 3 of the output XBAR
UPP-D6 15 I/O Universal parallel port data line 6
GPIO15 0, 4, 8, 12 I/O General-purpose input/output 15
EPWM8B 1 O Enhanced PWM8 output B (HRPWM-capable)
SCIRXDB 2 I SCI-B receive data
D3 7 6
MFSXB 3 I/O McBSP-B transmit frame synch
OUTPUTXBAR4 6 O Output 4 of the output XBAR
UPP-D5 15 I/O Universal parallel port data line 5
GPIO16 0, 4, 8, 12 I/O General-purpose input/output 16
SPISIMOA 1 I/O SPI-A slave in, master out
CANTXB 2 O CAN-B transmit
OUTPUTXBAR7 3 E1 8 7 O Output 7 of the output XBAR
EPWM9A 5 O Enhanced PWM9 output A
SD1_D1 7 I Sigma-Delta 1 channel 1 data input
UPP-D4 15 I/O Universal parallel port data line 4
GPIO17 0, 4, 8, 12 I/O General-purpose input/output 17
SPISOMIA 1 I/O SPI-A slave out, master in
CANRXB 2 I CAN-B receive
OUTPUTXBAR8 3 E2 9 8 O Output 8 of the output XBAR
EPWM9B 5 O Enhanced PWM9 output B
SD1_C1 7 I Sigma-Delta 1 channel 1 clock input
UPP-D3 15 I/O Universal parallel port data line 3
GPIO18 0, 4, 8, 12 I/O General-purpose input/output 18
SPICLKA 1 I/O SPI-A clock
SCITXDB 2 O SCI-B transmit data
CANRXA 3 E3 10 9 I CAN-A receive
EPWM10A 5 O Enhanced PWM10 output A
SD1_D2 7 I Sigma-Delta 1 channel 2 data input
UPP-D2 15 I/O Universal parallel port data line 2

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO19 0, 4, 8, 12 I/O General-purpose input/output 19
SPISTEA 1 I/O SPI-A slave transmit enable
SCIRXDB 2 I SCI-B receive data
CANTXA 3 E4 12 11 O CAN-A transmit
EPWM10B 5 O Enhanced PWM10 output B
SD1_C2 7 I Sigma-Delta 1 channel 2 clock input
UPP-D1 15 I/O Universal parallel port data line 1
GPIO20 0, 4, 8, 12 I/O General-purpose input/output 20
EQEP1A 1 I Enhanced QEP1 input A
MDXA 2 O McBSP-A transmit serial data
CANTXB 3 F2 13 12 O CAN-B transmit
EPWM11A 5 O Enhanced PWM11 output A
SD1_D3 7 I Sigma-Delta 1 channel 3 data input
UPP-D0 15 I/O Universal parallel port data line 0
GPIO21 0, 4, 8, 12 I/O General-purpose input/output 21
EQEP1B 1 I Enhanced QEP1 input B
MDRA 2 I McBSP-A receive serial data
CANRXB 3 F3 14 13 I CAN-B receive
EPWM11B 5 O Enhanced PWM11 output B
SD1_C3 7 I Sigma-Delta 1 channel 3 clock input
UPP-CLK 15 I/O Universal parallel port transmit clock
GPIO22 0, 4, 8, 12 I/O General-purpose input/output 22
EQEP1S 1 I/O Enhanced QEP1 strobe
MCLKXA 2 I/O McBSP-A transmit clock
SCITXDB 3 J4 22 – O SCI-B transmit data
EPWM12A 5 O Enhanced PWM12 output A
SPICLKB 6 I/O SPI-B clock
SD1_D4 7 I Sigma-Delta 1 channel 4 data input
GPIO23 0, 4, 8, 12 I/O General-purpose input/output 23
EQEP1I 1 I/O Enhanced QEP1 index
MFSXA 2 I/O McBSP-A transmit frame synch
SCIRXDB 3 K4 23 – I SCI-B receive data
EPWM12B 5 O Enhanced PWM12 output B
SPISTEB 6 I/O SPI-B slave transmit enable
SD1_C4 7 I Sigma-Delta 1 channel 4 clock input
GPIO24 0, 4, 8, 12 I/O General-purpose input/output 24
OUTPUTXBAR1 1 O Output 1 of the output XBAR
EQEP2A 2 I Enhanced QEP2 input A
K3 24 –
MDXB 3 O McBSP-B transmit serial data
SPISIMOB 6 I/O SPI-B slave in, master out
SD2_D1 7 I Sigma-Delta 2 channel 1 data input

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO25 0, 4, 8, 12 I/O General-purpose input/output 25
OUTPUTXBAR2 1 O Output 2 of the output XBAR
EQEP2B 2 I Enhanced QEP2 input B
K2 25 –
MDRB 3 I McBSP-B receive serial data
SPISOMIB 6 I/O SPI-B slave out, master in
SD2_C1 7 I Sigma-Delta 2 channel 1 clock input
GPIO26 0, 4, 8, 12 I/O General-purpose input/output 26
OUTPUTXBAR3 1 O Output 3 of the output XBAR
EQEP2I 2 I/O Enhanced QEP2 index
MCLKXB 3 K1 27 – I/O McBSP-B transmit clock
OUTPUTXBAR3 5 O Output 3 of the output XBAR
SPICLKB 6 I/O SPI-B clock
SD2_D2 7 I Sigma-Delta 2 channel 2 data input
GPIO27 0, 4, 8, 12 I/O General-purpose input/output 27
OUTPUTXBAR4 1 O Output 4 of the output XBAR
EQEP2S 2 I/O Enhanced QEP2 strobe
MFSXB 3 L1 28 – I/O McBSP-B transmit frame synch
OUTPUTXBAR4 5 O Output 4 of the output XBAR
SPISTEB 6 I/O SPI-B slave transmit enable
SD2_C2 7 I Sigma-Delta 2 channel 2 clock input
GPIO28 0, 4, 8, 12 I/O General-purpose input/output 28
SCIRXDA 1 I SCI-A receive data
EM1CS4 2 O External memory interface 1 chip select 4
V11 64 –
OUTPUTXBAR5 5 O Output 5 of the output XBAR
EQEP3A 6 I Enhanced QEP3 input A
SD2_D3 7 I Sigma-Delta 2 channel 3 data input
GPIO29 0, 4, 8, 12 I/O General-purpose input/output 29
SCITXDA 1 O SCI-A transmit data
EM1SDCKE 2 O External memory interface 1 SDRAM clock enable
W11 65 –
OUTPUTXBAR6 5 O Output 6 of the output XBAR
EQEP3B 6 I Enhanced QEP3 input B
SD2_C3 7 I Sigma-Delta 2 channel 3 clock input
GPIO30 0, 4, 8, 12 I/O General-purpose input/output 30
CANRXA 1 I CAN-A receive
EM1CLK 2 O External memory interface 1 clock
T11 63 –
OUTPUTXBAR7 5 O Output 7 of the output XBAR
EQEP3S 6 I/O Enhanced QEP3 strobe
SD2_D4 7 I Sigma-Delta 2 channel 4 data input
GPIO31 0, 4, 8, 12 I/O General-purpose input/output 31
CANTXA 1 O CAN-A transmit
EM1WE 2 O External memory interface 1 write enable
U11 66 –
OUTPUTXBAR8 5 O Output 8 of the output XBAR
EQEP3I 6 I/O Enhanced QEP3 index
SD2_C4 7 I Sigma-Delta 2 channel 4 clock input

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO32 0, 4, 8, 12 I/O General-purpose input/output 32
SDAA 1 U13 67 – I/OD I2C-A data open-drain bidirectional port
EM1CS0 2 O External memory interface 1 chip select 0
GPIO33 0, 4, 8, 12 I/O General-purpose input/output 33
SCLA 1 T13 69 – I/OD I2C-A clock open-drain bidirectional port
EM1RNW 2 O External memory interface 1 read not write
GPIO34 0, 4, 8, 12 I/O General-purpose input/output 34
OUTPUTXBAR1 1 O Output 1 of the output XBAR
U14 70 –
EM1CS2 2 O External memory interface 1 chip select 2
SDAB 6 I/OD I2C-B data open-drain bidirectional port
GPIO35 0, 4, 8, 12 I/O General-purpose input/output 35
SCIRXDA 1 I SCI-A receive data
T14 71 –
EM1CS3 2 O External memory interface 1 chip select 3
SCLB 6 I/OD I2C-B clock open-drain bidirectional port
GPIO36 0, 4, 8, 12 I/O General-purpose input/output 36
SCITXDA 1 O SCI-A transmit data
V16 83 –
EM1WAIT 2 I External memory interface 1 Asynchronous SRAM WAIT
CANRXA 6 I CAN-A receive
GPIO37 0, 4, 8, 12 I/O General-purpose input/output 37
OUTPUTXBAR2 1 O Output 2 of the output XBAR
U16 84 –
EM1OE 2 O External memory interface 1 output enable
CANTXA 6 O CAN-A transmit
GPIO38 0, 4, 8, 12 I/O General-purpose input/output 38
EM1A0 2 O External memory interface 1 address line 0
T16 85 –
SCITXDC 5 O SCI-C transmit data
CANTXB 6 O CAN-B transmit
GPIO39 0, 4, 8, 12 I/O General-purpose input/output 39
EM1A1 2 O External memory interface 1 address line 1
W17 86 –
SCIRXDC 5 I SCI-C receive data
CANRXB 6 I CAN-B receive
GPIO40 0, 4, 8, 12 I/O General-purpose input/output 40
EM1A2 2 V17 87 – O External memory interface 1 address line 2
SDAB 6 I/OD I2C-B data open-drain bidirectional port
GPIO41 0, 4, 8, 12 I/O General-purpose input/output 41. For applications using
the Hibernate low-power mode, this pin serves as the
GPIOHIBWAKE signal. For details, see the Low Power
Modes section of the System Control chapter in the
U17 89 51 TMS320F2837xD Dual-Core Real-Time Microcontrollers
Technical Reference Manual.
EM1A3 2 O External memory interface 1 address line 3
SCLB 6 I/OD I2C-B clock open-drain bidirectional port
GPIO42 0, 4, 8, 12 I/O General-purpose input/output 42
SDAA 6 I/OD I2C-A data open-drain bidirectional port
D19 130 73
SCITXDA 15 O SCI-A transmit data
USB0DM Analog I/O USB PHY differential data

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO43 0, 4, 8, 12 I/O General-purpose input/output 43
SCLA 6 I/OD I2C-A clock open-drain bidirectional port
C19 131 74
SCIRXDA 15 I SCI-A receive data
USB0DP Analog I/O USB PHY differential data
GPIO44 0, 4, 8, 12 I/O General-purpose input/output 44
K18 113 –
EM1A4 2 O External memory interface 1 address line 4
GPIO45 0, 4, 8, 12 I/O General-purpose input/output 45
K19 115 –
EM1A5 2 O External memory interface 1 address line 5
GPIO46 0, 4, 8, 12 I/O General-purpose input/output 46
EM1A6 2 E19 128 – O External memory interface 1 address line 6
SCIRXDD 6 I SCI-D receive data
GPIO47 0, 4, 8, 12 I/O General-purpose input/output 47
EM1A7 2 E18 129 – O External memory interface 1 address line 7
SCITXDD 6 O SCI-D transmit data
GPIO48 0, 4, 8, 12 I/O General-purpose input/output 48
OUTPUTXBAR3 1 O Output 3 of the output XBAR
EM1A8 2 R16 90 – O External memory interface 1 address line 8
SCITXDA 6 O SCI-A transmit data
SD1_D1 7 I Sigma-Delta 1 channel 1 data input
GPIO49 0, 4, 8, 12 I/O General-purpose input/output 49
OUTPUTXBAR4 1 O Output 4 of the output XBAR
EM1A9 2 R17 93 – O External memory interface 1 address line 9
SCIRXDA 6 I SCI-A receive data
SD1_C1 7 I Sigma-Delta 1 channel 1 clock input
GPIO50 0, 4, 8, 12 I/O General-purpose input/output 50
EQEP1A 1 I Enhanced QEP1 input A
EM1A10 2 R18 94 – O External memory interface 1 address line 10
SPISIMOC 6 I/O SPI-C slave in, master out
SD1_D2 7 I Sigma-Delta 1 channel 2 data input
GPIO51 0, 4, 8, 12 I/O General-purpose input/output 51
EQEP1B 1 I Enhanced QEP1 input B
EM1A11 2 R19 95 – O External memory interface 1 address line 11
SPISOMIC 6 I/O SPI-C slave out, master in
SD1_C2 7 I Sigma-Delta 1 channel 2 clock input
GPIO52 0, 4, 8, 12 I/O General-purpose input/output 52
EQEP1S 1 I/O Enhanced QEP1 strobe
EM1A12 2 P16 96 – O External memory interface 1 address line 12
SPICLKC 6 I/O SPI-C clock
SD1_D3 7 I Sigma-Delta 1 channel 3 data input

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO53 0, 4, 8, 12 I/O General-purpose input/output 53
EQEP1I 1 I/O Enhanced QEP1 index
EM1D31 2 I/O External memory interface 1 data line 31
P17 97 –
EM2D15 3 I/O External memory interface 2 data line 15
SPISTEC 6 I/O SPI-C slave transmit enable
SD1_C3 7 I Sigma-Delta 1 channel 3 clock input
GPIO54 0, 4, 8, 12 I/O General-purpose input/output 54
SPISIMOA 1 I/O SPI-A slave in, master out
EM1D30 2 I/O External memory interface 1 data line 30
EM2D14 3 P18 98 – I/O External memory interface 2 data line 14
EQEP2A 5 I Enhanced QEP2 input A
SCITXDB 6 O SCI-B transmit data
SD1_D4 7 I Sigma-Delta 1 channel 4 data input
GPIO55 0, 4, 8, 12 I/O General-purpose input/output 55
SPISOMIA 1 I/O SPI-A slave out, master in
EM1D29 2 I/O External memory interface 1 data line 29
EM2D13 3 P19 100 – I/O External memory interface 2 data line 13
EQEP2B 5 I Enhanced QEP2 input B
SCIRXDB 6 I SCI-B receive data
SD1_C4 7 I Sigma-Delta 1 channel 4 clock input
GPIO56 0, 4, 8, 12 I/O General-purpose input/output 56
SPICLKA 1 I/O SPI-A clock
EM1D28 2 I/O External memory interface 1 data line 28
EM2D12 3 N16 101 – I/O External memory interface 2 data line 12
EQEP2S 5 I/O Enhanced QEP2 strobe
SCITXDC 6 O SCI-C transmit data
SD2_D1 7 I Sigma-Delta 2 channel 1 data input
GPIO57 0, 4, 8, 12 I/O General-purpose input/output 57
SPISTEA 1 I/O SPI-A slave transmit enable
EM1D27 2 I/O External memory interface 1 data line 27
EM2D11 3 N18 102 – I/O External memory interface 2 data line 11
EQEP2I 5 I/O Enhanced QEP2 index
SCIRXDC 6 I SCI-C receive data
SD2_C1 7 I Sigma-Delta 2 channel 1 clock input
GPIO58 0, 4, 8, 12 I/O General-purpose input/output 58
MCLKRA 1 I/O McBSP-A receive clock
EM1D26 2 I/O External memory interface 1 data line 26
EM2D10 3 I/O External memory interface 2 data line 10
N17 103 52
OUTPUTXBAR1 5 O Output 1 of the output XBAR
SPICLKB 6 I/O SPI-B clock
SD2_D2 7 I Sigma-Delta 2 channel 2 data input
(2)
SPISIMOA 15 I/O SPI-A slave in, master out

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
(3)
GPIO59 0, 4, 8, 12 I/O General-purpose input/output 59
MFSRA 1 I/O McBSP-A receive frame synch
EM1D25 2 I/O External memory interface 1 data line 25
EM2D9 3 I/O External memory interface 2 data line 9
M16 104 53
OUTPUTXBAR2 5 O Output 2 of the output XBAR
SPISTEB 6 I/O SPI-B slave transmit enable
SD2_C2 7 I Sigma-Delta 2 channel 2 clock input
(2)
SPISOMIA 15 I/O SPI-A slave out, master in
GPIO60 0, 4, 8, 12 I/O General-purpose input/output 60
MCLKRB 1 I/O McBSP-B receive clock
EM1D24 2 I/O External memory interface 1 data line 24
EM2D8 3 I/O External memory interface 2 data line 8
M17 105 54
OUTPUTXBAR3 5 O Output 3 of the output XBAR
SPISIMOB 6 I/O SPI-B slave in, master out
SD2_D3 7 I Sigma-Delta 2 channel 3 data input
(2)
SPICLKA 15 I/O SPI-A clock
(3)
GPIO61 0, 4, 8, 12 I/O General-purpose input/output 61
MFSRB 1 I/O McBSP-B receive frame synch
EM1D23 2 I/O External memory interface 1 data line 23
EM2D7 3 I/O External memory interface 2 data line 7
L16 107 56
OUTPUTXBAR4 5 O Output 4 of the output XBAR
SPISOMIB 6 I/O SPI-B slave out, master in
SD2_C3 7 I Sigma-Delta 2 channel 3 clock input
(2)
SPISTEA 15 I/O SPI-A slave transmit enable
GPIO62 0, 4, 8, 12 I/O General-purpose input/output 62
SCIRXDC 1 I SCI-C receive data
EM1D22 2 I/O External memory interface 1 data line 22
EM2D6 3 J17 108 57 I/O External memory interface 2 data line 6
EQEP3A 5 I Enhanced QEP3 input A
CANRXA 6 I CAN-A receive
SD2_D4 7 I Sigma-Delta 2 channel 4 data input
GPIO63 0, 4, 8, 12 I/O General-purpose input/output 63
SCITXDC 1 O SCI-C transmit data
EM1D21 2 I/O External memory interface 1 data line 21
EM2D5 3 I/O External memory interface 2 data line 5
J16 109 58
EQEP3B 5 I Enhanced QEP3 input B
CANTXA 6 O CAN-A transmit
SD2_C4 7 I Sigma-Delta 2 channel 4 clock input
(2)
SPISIMOB 15 I/O SPI-B slave in, master out

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
(3)
GPIO64 0, 4, 8, 12 I/O General-purpose input/output 64
EM1D20 2 I/O External memory interface 1 data line 20
EM2D4 3 I/O External memory interface 2 data line 4
L17 110 59
EQEP3S 5 I/O Enhanced QEP3 strobe
SCIRXDA 6 I SCI-A receive data
(2)
SPISOMIB 15 I/O SPI-B slave out, master in
GPIO65 0, 4, 8, 12 I/O General-purpose input/output 65
EM1D19 2 I/O External memory interface 1 data line 19
EM2D3 3 I/O External memory interface 2 data line 3
K16 111 60
EQEP3I 5 I/O Enhanced QEP3 index
SCITXDA 6 O SCI-A transmit data
(2)
SPICLKB 15 I/O SPI-B clock
(3)
GPIO66 0, 4, 8, 12 I/O General-purpose input/output 66
EM1D18 2 I/O External memory interface 1 data line 18
EM2D2 3 K17 112 61 I/O External memory interface 2 data line 2
SDAB 6 I/OD I2C-B data open-drain bidirectional port
(2)
SPISTEB 15 I/O SPI-B slave transmit enable
GPIO67 0, 4, 8, 12 I/O General-purpose input/output 67
EM1D17 2 B19 132 – I/O External memory interface 1 data line 17
EM2D1 3 I/O External memory interface 2 data line 1
GPIO68 0, 4, 8, 12 I/O General-purpose input/output 68
EM1D16 2 C18 133 – I/O External memory interface 1 data line 16
EM2D0 3 I/O External memory interface 2 data line 0
GPIO69 0, 4, 8, 12 I/O General-purpose input/output 69
EM1D15 2 I/O External memory interface 1 data line 15
B18 134 75
SCLB 6 I/OD I2C-B clock open-drain bidirectional port
(2)
SPISIMOC 15 I/O SPI-C slave in, master out
(3)
GPIO70 0, 4, 8, 12 I/O General-purpose input/output 70
EM1D14 2 I/O External memory interface 1 data line 14
CANRXA 5 A17 135 76 I CAN-A receive
SCITXDB 6 O SCI-B transmit data
(2)
SPISOMIC 15 I/O SPI-C slave out, master in
GPIO71 0, 4, 8, 12 I/O General-purpose input/output 71
EM1D13 2 I/O External memory interface 1 data line 13
CANTXA 5 B17 136 77 O CAN-A transmit
SCIRXDB 6 I SCI-B receive data
(2)
SPICLKC 15 I/O SPI-C clock
(3)
GPIO72 General-purpose input/output 72. This is the factory
0, 4, 8, 12 I/O
default boot mode select pin 1.
EM1D12 2 I/O External memory interface 1 data line 12
B16 139 80
CANTXB 5 O CAN-B transmit
SCITXDC 6 O SCI-C transmit data
(2)
SPISTEC 15 I/O SPI-C slave transmit enable

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO73 0, 4, 8, 12 I/O General-purpose input/output 73
EM1D11 2 I/O External memory interface 1 data line 11
XCLKOUT 3 O/Z External clock output. This pin outputs a divided-
down version of a chosen clock signal from
within the device. The clock signal is chosen
A16 140 81
using the CLKSRCCTL3.XCLKOUTSEL bit field
while the divide ratio is chosen using the
XCLKOUTDIVSEL.XCLKOUTDIV bit field.
CANRXB 5 I CAN-B receive
SCIRXDC 6 I SCI-C receive
GPIO74 0, 4, 8, 12 I/O General-purpose input/output 74
C17 141 –
EM1D10 2 I/O External memory interface 1 data line 10
GPIO75 0, 4, 8, 12 I/O General-purpose input/output 75
D16 142 –
EM1D9 2 I/O External memory interface 1 data line 9
GPIO76 0, 4, 8, 12 I/O General-purpose input/output 76
EM1D8 2 C16 143 – I/O External memory interface 1 data line 8
SCITXDD 6 O SCI-D transmit data
GPIO77 0, 4, 8, 12 I/O General-purpose input/output 77
EM1D7 2 A15 144 – I/O External memory interface 1 data line 7
SCIRXDD 6 I SCI-D receive data
GPIO78 0, 4, 8, 12 I/O General-purpose input/output 78
EM1D6 2 B15 145 82 I/O External memory interface 1 data line 6
EQEP2A 6 I Enhanced QEP2 input A
GPIO79 0, 4, 8, 12 I/O General-purpose input/output 79
EM1D5 2 C15 146 – I/O External memory interface 1 data line 5
EQEP2B 6 I Enhanced QEP2 input B
GPIO80 0, 4, 8, 12 I/O General-purpose input/output 80
EM1D4 2 D15 148 – I/O External memory interface 1 data line 4
EQEP2S 6 I/O Enhanced QEP2 strobe
GPIO81 0, 4, 8, 12 I/O General-purpose input/output 81
EM1D3 2 A14 149 – I/O External memory interface 1 data line 3
EQEP2I 6 I/O Enhanced QEP2 index
GPIO82 0, 4, 8, 12 I/O General-purpose input/output 82
B14 150 –
EM1D2 2 I/O External memory interface 1 data line 2
GPIO83 0, 4, 8, 12 I/O General-purpose input/output 83
C14 151 –
EM1D1 2 I/O External memory interface 1 data line 1
General-purpose input/output 84. This is the factory
GPIO84 0, 4, 8, 12 I/O
default boot mode select pin 0.
SCITXDA 5 A11 154 85 O SCI-A transmit data
MDXB 6 O McBSP-B transmit serial data
MDXA 15 O McBSP-A transmit serial data

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO85 0, 4, 8, 12 I/O General-purpose input/output 85
EM1D0 2 I/O External memory interface 1 data line 0
SCIRXDA 5 B11 155 86 I SCI-A receive data
MDRB 6 I McBSP-B receive serial data
MDRA 15 I McBSP-A receive serial data
GPIO86 0, 4, 8, 12 I/O General-purpose input/output 86
EM1A13 2 O External memory interface 1 address line 13
EM1CAS 3 O External memory interface 1 column address strobe
C11 156 87
SCITXDB 5 O SCI-B transmit data
MCLKXB 6 I/O McBSP-B transmit clock
MCLKXA 15 I/O McBSP-A transmit clock
GPIO87 0, 4, 8, 12 I/O General-purpose input/output 87
EM1A14 2 O External memory interface 1 address line 14
EM1RAS 3 O External memory interface 1 row address strobe
D11 157 88
SCIRXDB 5 I SCI-B receive data
MFSXB 6 I/O McBSP-B transmit frame synch
MFSXA 15 I/O McBSP-A transmit frame synch
GPIO88 0, 4, 8, 12 I/O General-purpose input/output 88
EM1A15 2 C6 170 – O External memory interface 1 address line 15
EM1DQM0 3 O External memory interface 1 Input/output mask for byte 0
GPIO89 0, 4, 8, 12 I/O General-purpose input/output 89
EM1A16 2 O External memory interface 1 address line 16
D6 171 96
EM1DQM1 3 O External memory interface 1 Input/output mask for byte 1
SCITXDC 6 O SCI-C transmit data
GPIO90 0, 4, 8, 12 I/O General-purpose input/output 90
EM1A17 2 O External memory interface 1 address line 17
A5 172 97
EM1DQM2 3 O External memory interface 1 Input/output mask for byte 2
SCIRXDC 6 I SCI-C receive data
GPIO91 0, 4, 8, 12 I/O General-purpose input/output 91
EM1A18 2 O External memory interface 1 address line 18
B5 173 98
EM1DQM3 3 O External memory interface 1 Input/output mask for byte 3
SDAA 6 I/OD I2C-A data open-drain bidirectional port
GPIO92 0, 4, 8, 12 I/O General-purpose input/output 92
EM1A19 2 O External memory interface 1 address line 19
A4 174 99
EM1BA1 3 O External memory interface 1 bank address 1
SCLA 6 I/OD I2C-A clock open-drain bidirectional port
GPIO93 0, 4, 8, 12 I/O General-purpose input/output 93
EM1BA0 3 B4 175 – O External memory interface 1 bank address 0
SCITXDD 6 O SCI-D transmit data
GPIO94 0, 4, 8, 12 I/O General-purpose input/output 94
A3 176 –
SCIRXDD 6 I SCI-D receive data
GPIO95 0, 4, 8, 12 B3 – – I/O General-purpose input/output 95

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO96 0, 4, 8, 12 I/O General-purpose input/output 96
EM2DQM1 3 C3 – – O External memory interface 2 Input/output mask for byte 1
EQEP1A 5 I Enhanced QEP1 input A
GPIO97 0, 4, 8, 12 I/O General-purpose input/output 97
EM2DQM0 3 A2 – – O External memory interface 2 Input/output mask for byte 0
EQEP1B 5 I Enhanced QEP1 input B
GPIO98 0, 4, 8, 12 I/O General-purpose input/output 98
EM2A0 3 F1 – – O External memory interface 2 address line 0
EQEP1S 5 I/O Enhanced QEP1 strobe
GPIO99 0, 4, 8, 12 I/O General-purpose input/output 99
EM2A1 3 G1 17 14 O External memory interface 2 address line 1
EQEP1I 5 I/O Enhanced QEP1 index
GPIO100 0, 4, 8, 12 I/O General-purpose input/output 100
EM2A2 3 O External memory interface 2 address line 2
H1 – –
EQEP2A 5 I Enhanced QEP2 input A
SPISIMOC 6 I/O SPI-C slave in, master out
GPIO101 0, 4, 8, 12 I/O General-purpose input/output 101
EM2A3 3 O External memory interface 2 address line 3
H2 – –
EQEP2B 5 I Enhanced QEP2 input B
SPISOMIC 6 I/O SPI-C slave out, master in
GPIO102 0, 4, 8, 12 I/O General-purpose input/output 102
EM2A4 3 O External memory interface 2 address line 4
H3 – –
EQEP2S 5 I/O Enhanced QEP2 strobe
SPICLKC 6 I/O SPI-C clock
GPIO103 0, 4, 8, 12 I/O General-purpose input/output 103
EM2A5 3 O External memory interface 2 address line 5
J1 – –
EQEP2I 5 I/O Enhanced QEP2 index
SPISTEC 6 I/O SPI-C slave transmit enable
GPIO104 0, 4, 8, 12 I/O General-purpose input/output 104
SDAA 1 I/OD I2C-A data open-drain bidirectional port
EM2A6 3 J2 – – O External memory interface 2 address line 6
EQEP3A 5 I Enhanced QEP3 input A
SCITXDD 6 O SCI-D transmit data
GPIO105 0, 4, 8, 12 I/O General-purpose input/output 105
SCLA 1 I/OD I2C-A clock open-drain bidirectional port
EM2A7 3 J3 – – O External memory interface 2 address line 7
EQEP3B 5 I Enhanced QEP3 input B
SCIRXDD 6 I SCI-D receive data
GPIO106 0, 4, 8, 12 I/O General-purpose input/output 106
EM2A8 3 O External memory interface 2 address line 8
L2 – –
EQEP3S 5 I/O Enhanced QEP3 strobe
SCITXDC 6 O SCI-C transmit data

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO107 0, 4, 8, 12 I/O General-purpose input/output 107
EM2A9 3 O External memory interface 2 address line 9
L3 – –
EQEP3I 5 I/O Enhanced QEP3 index
SCIRXDC 6 I SCI-C receive data
GPIO108 0, 4, 8, 12 I/O General-purpose input/output 108
L4 – –
EM2A10 3 O External memory interface 2 address line 10
GPIO109 0, 4, 8, 12 I/O General-purpose input/output 109
N2 – –
EM2A11 3 O External memory interface 2 address line 11
GPIO110 0, 4, 8, 12 I/O General-purpose input/output 110
M2 – –
EM2WAIT 3 I External memory interface 2 Asynchronous SRAM WAIT
GPIO111 0, 4, 8, 12 I/O General-purpose input/output 111
M4 – –
EM2BA0 3 O External memory interface 2 bank address 0
GPIO112 0, 4, 8, 12 I/O General-purpose input/output 112
M3 – –
EM2BA1 3 O External memory interface 2 bank address 1
GPIO113 0, 4, 8, 12 I/O General-purpose input/output 113
N4 – –
EM2CAS 3 O External memory interface 2 column address strobe
GPIO114 0, 4, 8, 12 I/O General-purpose input/output 114
N3 – –
EM2RAS 3 O External memory interface 2 row address strobe
GPIO115 0, 4, 8, 12 I/O General-purpose input/output 115
V12 – –
EM2CS0 3 O External memory interface 2 chip select 0
GPIO116 0, 4, 8, 12 I/O General-purpose input/output 116
W10 – –
EM2CS2 3 O External memory interface 2 chip select 2
GPIO117 0, 4, 8, 12 I/O General-purpose input/output 117
U12 – –
EM2SDCKE 3 O External memory interface 2 SDRAM clock enable
GPIO118 0, 4, 8, 12 I/O General-purpose input/output 118
T12 – –
EM2CLK 3 O External memory interface 2 clock
GPIO119 0, 4, 8, 12 I/O General-purpose input/output 119
T15 – –
EM2RNW 3 O External memory interface 2 read not write
GPIO120 0, 4, 8, 12 I/O General-purpose input/output 120
EM2WE 3 U15 – – O External memory interface 2 write enable
USB0PFLT 15 I/O USB external regulator power fault indicator
GPIO121 0, 4, 8, 12 I/O General-purpose input/output 121
EM2OE 3 W16 – – O External memory interface 2 output enable
USB0EPEN 15 I/O USB external regulator enable
GPIO122 0, 4, 8, 12 I/O General-purpose input/output 122
SPISIMOC 6 T8 – – I/O SPI-C slave in, master out
SD1_D1 7 I Sigma-Delta 1 channel 1 data input
GPIO123 0, 4, 8, 12 I/O General-purpose input/output 123
SPISOMIC 6 U8 – – I/O SPI-C slave out, master in
SD1_C1 7 I Sigma-Delta 1 channel 1 clock input
GPIO124 0, 4, 8, 12 I/O General-purpose input/output 124
SPICLKC 6 V8 – – I/O SPI-C clock
SD1_D2 7 I Sigma-Delta 1 channel 2 data input

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO125 0, 4, 8, 12 I/O General-purpose input/output 125
SPISTEC 6 T9 – – I/O SPI-C slave transmit enable
SD1_C2 7 I Sigma-Delta 1 channel 2 clock input
GPIO126 0, 4, 8, 12 I/O General-purpose input/output 126
U9 – –
SD1_D3 7 I Sigma-Delta 1 channel 3 data input
GPIO127 0, 4, 8, 12 I/O General-purpose input/output 127
V9 – –
SD1_C3 7 I Sigma-Delta 1 channel 3 clock input
GPIO128 0, 4, 8, 12 I/O General-purpose input/output 128
W9 – –
SD1_D4 7 I Sigma-Delta 1 channel 4 data input
GPIO129 0, 4, 8, 12 I/O General-purpose input/output 129
T10 – –
SD1_C4 7 I Sigma-Delta 1 channel 4 clock input
GPIO130 0, 4, 8, 12 I/O General-purpose input/output 130
U10 – –
SD2_D1 7 I Sigma-Delta 2 channel 1 data input
GPIO131 0, 4, 8, 12 I/O General-purpose input/output 131
V10 – –
SD2_C1 7 I Sigma-Delta 2 channel 1 clock input
GPIO132 0, 4, 8, 12 I/O General-purpose input/output 132
W18 – –
SD2_D2 7 I Sigma-Delta 2 channel 2 data input
GPIO133/AUXCLKIN 0, 4, 8, 12 I/O General-purpose input/output 133. The AUXCLKIN
function of this GPIO pin could be used to provide a
single-ended 3.3-V level clock signal to the Auxiliary
G18 118 – Phase-Locked Loop (AUXPLL), whose output is used for
the USB module. The AUXCLKIN clock may also be used
for the CAN module.
SD2_C2 7 I Sigma-Delta 2 channel 2 clock input
GPIO134 0, 4, 8, 12 I/O General-purpose input/output 134
V18 – –
SD2_D3 7 I Sigma-Delta 2 channel 3 data input
GPIO135 0, 4, 8, 12 I/O General-purpose input/output 135
SCITXDA 6 U18 – – O SCI-A transmit data
SD2_C3 7 I Sigma-Delta 2 channel 3 clock input
GPIO136 0, 4, 8, 12 I/O General-purpose input/output 136
SCIRXDA 6 T17 – – I SCI-A receive data
SD2_D4 7 I Sigma-Delta 2 channel 4 data input
GPIO137 0, 4, 8, 12 I/O General-purpose input/output 137
SCITXDB 6 T18 – – O SCI-B transmit data
SD2_C4 7 I Sigma-Delta 2 channel 4 clock input
GPIO138 0, 4, 8, 12 I/O General-purpose input/output 138
T19 – –
SCIRXDB 6 I SCI-B receive data
GPIO139 0, 4, 8, 12 I/O General-purpose input/output 139
N19 – –
SCIRXDC 6 I SCI-C receive data
GPIO140 0, 4, 8, 12 I/O General-purpose input/output 140
M19 – –
SCITXDC 6 O SCI-C transmit data
GPIO141 0, 4, 8, 12 I/O General-purpose input/output 141
M18 – –
SCIRXDD 6 I SCI-D receive data
GPIO142 0, 4, 8, 12 I/O General-purpose input/output 142
L19 – –
SCITXDD 6 O SCI-D transmit data

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO143 0, 4, 8, 12 F18 – – I/O General-purpose input/output 143
GPIO144 0, 4, 8, 12 F17 – – I/O General-purpose input/output 144
GPIO145 0, 4, 8, 12 I/O General-purpose input/output 145
E17 – –
EPWM1A 1 O Enhanced PWM1 output A (HRPWM-capable)
GPIO146 0, 4, 8, 12 I/O General-purpose input/output 146
D18 – –
EPWM1B 1 O Enhanced PWM1 output B (HRPWM-capable)
GPIO147 0, 4, 8, 12 I/O General-purpose input/output 147
D17 – –
EPWM2A 1 O Enhanced PWM2 output A (HRPWM-capable)
GPIO148 0, 4, 8, 12 I/O General-purpose input/output 148
D14 – –
EPWM2B 1 O Enhanced PWM2 output B (HRPWM-capable)
GPIO149 0, 4, 8, 12 I/O General-purpose input/output 149
A13 – –
EPWM3A 1 O Enhanced PWM3 output A (HRPWM-capable)
GPIO150 0, 4, 8, 12 I/O General-purpose input/output 150
B13 – –
EPWM3B 1 O Enhanced PWM3 output B (HRPWM-capable)
GPIO151 0, 4, 8, 12 I/O General-purpose input/output 151
C13 – –
EPWM4A 1 O Enhanced PWM4 output A (HRPWM-capable)
GPIO152 0, 4, 8, 12 I/O General-purpose input/output 152
D13 – –
EPWM4B 1 O Enhanced PWM4 output B (HRPWM-capable)
GPIO153 0, 4, 8, 12 I/O General-purpose input/output 153
A12 – –
EPWM5A 1 O Enhanced PWM5 output A (HRPWM-capable)
GPIO154 0, 4, 8, 12 I/O General-purpose input/output 154
B12 – –
EPWM5B 1 O Enhanced PWM5 output B (HRPWM-capable)
GPIO155 0, 4, 8, 12 I/O General-purpose input/output 155
C12 – –
EPWM6A 1 O Enhanced PWM6 output A (HRPWM-capable)
GPIO156 0, 4, 8, 12 I/O General-purpose input/output 156
D12 – –
EPWM6B 1 O Enhanced PWM6 output B (HRPWM-capable)
GPIO157 0, 4, 8, 12 I/O General-purpose input/output 157
B10 – –
EPWM7A 1 O Enhanced PWM7 output A (HRPWM-capable)
GPIO158 0, 4, 8, 12 I/O General-purpose input/output 158
C10 – –
EPWM7B 1 O Enhanced PWM7 output B (HRPWM-capable)
GPIO159 0, 4, 8, 12 I/O General-purpose input/output 159
D10 – –
EPWM8A 1 O Enhanced PWM8 output A (HRPWM-capable)
GPIO160 0, 4, 8, 12 I/O General-purpose input/output 160
B9 – –
EPWM8B 1 O Enhanced PWM8 output B (HRPWM-capable)
GPIO161 0, 4, 8, 12 I/O General-purpose input/output 161
C9 – –
EPWM9A 1 O Enhanced PWM9 output A
GPIO162 0, 4, 8, 12 I/O General-purpose input/output 162
D9 – –
EPWM9B 1 O Enhanced PWM9 output B
GPIO163 0, 4, 8, 12 I/O General-purpose input/output 163
A8 – –
EPWM10A 1 O Enhanced PWM10 output A
GPIO164 0, 4, 8, 12 I/O General-purpose input/output 164
B8 – –
EPWM10B 1 O Enhanced PWM10 output B

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
GPIO165 0, 4, 8, 12 I/O General-purpose input/output 165
C5 – –
EPWM11A 1 O Enhanced PWM11 output A
GPIO166 0, 4, 8, 12 I/O General-purpose input/output 166
D5 – –
EPWM11B 1 O Enhanced PWM11 output B
GPIO167 0, 4, 8, 12 I/O General-purpose input/output 167
C4 – –
EPWM12A 1 O Enhanced PWM12 output A
GPIO168 0, 4, 8, 12 I/O General-purpose input/output 168
D4 – –
EPWM12B 1 O Enhanced PWM12 output B
RESET
Device Reset (in) and Watchdog Reset (out). The devices
have a built-in power-on reset (POR) circuit. During a
power-on condition, this pin is driven low by the device.
An external circuit may also drive this pin to assert a
device reset. This pin is also driven low by the MCU
when a watchdog reset or NMI watchdog reset occurs.
During watchdog reset, the XRS pin is driven low for
the watchdog reset duration of 512 OSCCLK cycles. A
XRS F19 124 69 I/OD resistor with a value from 2.2 kΩ to 10 kΩ should be
placed between XRS and VDDIO. If a capacitor is placed
between XRS and VSS for noise filtering, it should be
100 nF or smaller. These values will allow the watchdog
to properly drive the XRS pin to VOL within 512 OSCCLK
cycles when the watchdog reset is asserted. The output
buffer of this pin is an open drain with an internal pullup. If
this pin is driven by an external device, it should be done
using an open-drain device.
CLOCKS
On-chip crystal-oscillator input. To use this oscillator, a
quartz crystal must be connected across X1 and X2. If
X1 G19 123 68 I this pin is not used, it must be tied to GND.
This pin can also be used to feed a single-ended 3.3-V
level clock. In this case, X2 is a No Connect (NC).
On-chip crystal-oscillator output. A quartz crystal may be
X2 J19 121 66 O connected across X1 and X2. If X2 is not used, it must be
left unconnected.
NO CONNECT
No connect. BGA ball is electrically open and not
NC H4 – –
connected to the die.
JTAG
TCK V15 81 50 I JTAG test clock with internal pullup (see Section 6.6)
JTAG test data input (TDI) with internal pullup. TDI is
TDI W13 77 46 I clocked into the selected register (instruction or data) on a
rising edge of TCK.
JTAG scan out, test data output (TDO). The contents of
TDO W15 78 47 O/Z the selected register (instruction or data) are shifted out of
(3)
TDO on the falling edge of TCK.
JTAG test-mode select (TMS) with internal pullup. This
TMS W14 80 49 I serial control input is clocked into the TAP controller on
the rising edge of TCK.

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
JTAG test reset with internal pulldown. TRST, when driven
high, gives the scan system control of the operations
of the device. If this signal is driven low, the device
operates in its functional mode, and the test reset signals
are ignored. NOTE: TRST must be maintained low at
all times during normal device operation, so an external
pulldown resistor is required on this pin for protection
TRST V14 79 48 I against noise spikes. The value of this resistor should be
as small as possible, so long as the JTAG debug probe
is still able to drive the TRST pin high. A resistor between
2.2-kΩ and 10-kΩ generally offers adequate protection.
Since the value of the resistor is application-specific,
TI recommends that each target board be validated for
proper operation of the debug probe and the application.
This pin has an internal 50-ns (nominal) glitch filter.
INTERNAL VOLTAGE REGULATOR CONTROL
Internal voltage regulator enable with internal pulldown.
VREGENZ J18 119 64 I The internal VREG is not supported and must be
disabled. Connect VREGENZ to VDDIO.
ANALOG, DIGITAL, AND I/O POWER
E9 16 16
E11 21 39
F9 61 45 1.2-V digital logic power pins. There are two options for
F11 76 63 placing the decoupling capacitors.
G14 117 71 • Option 1 - Even Distribution: Distribute decoupling
capacitance evenly across each VDD pin with a
G15 126 78
minimum total capacitance of approximately 20uF.
J14 137 84
VDD • Option 2 - Bulk Capacitance: Place a 1uF capacitor
J15 153 89 near each VDD pin and place the remainder of the
K5 158 95 minimum total 20uF capacitance as bulk capacitance
K6 169 – on the VDD net .
P10 – – The exact value of the decoupling capacitance should be
P13 – – determined by your system voltage regulation solution.

R10 – –
R13 – –
R11 72 41 3.3-V Flash power pin. Place a minimum 0.1-µF
VDD3VFL
R12 – – decoupling capacitor on each pin.

P6 36 18 3.3-V analog power pins. Place a minimum 2.2-µF

VDDA
R6 54 38 decoupling capacitor to VSSA on each pin.

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP (1)
I/O/Z DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
A9 3 2
A18 11 10
B1 15 15
E7 20 40
E10 26 44
E13 62 55
E16 68 62
F4 75 72
F7 82 79
F10 88 83
F13 91 90
F16 99 94
G4 106 –
3.3-V digital I/O power pins. Place a minimum 0.1-µF
G5 114 – decoupling capacitor on each pin. The exact value of
VDDIO
G6 116 – the decoupling capacitance should be determined by your
system voltage regulation solution.
H5 127 –
H6 138 –
L14 147 –
L15 152 –
M1 159 –
M5 168 –
M6 – –
N14 – –
N15 – –
P9 – –
R9 – –
V19 – –
W8 – –
H16 120 65 Power pins for the 3.3-V on-chip crystal oscillator (X1 and
X2) and the two zero-pin internal oscillators (INTOSC).
VDDOSC
H17 125 70 Place a 0.1-μF (minimum) decoupling capacitor on each
pin.

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP (1)
I/O/Z DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
A1
A10
A19
E5
E6
E8
E12
E14
E15
F5
F6
F8
F12
F14
F15
G16
G17
H8
H9
H10
H11 PWR PWR Device ground. For Quad Flatpacks (QFPs), the
VSS PAD PAD PowerPAD on the bottom of the package must be
H12 (177) (101) soldered to the ground plane of the PCB.
H14
H15
J5
J6
J8
J9
J10
J11
J12
K8
K9
K10
K11
K12
K14
K15
L5
L6
L8
L9

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
L10
L11
L12
L18
M8
M9
M10
M11
M12
M14
M15
N1
N5 PWR PWR Device ground. For Quad Flatpacks (QFPs), the
VSS PAD PAD PowerPAD on the bottom of the package must be
N6 (177) (101) soldered to the ground plane of the PCB.
P7
P8
P11
P12
P14
P15
R7
R8
R14
R15
W7
W19
H18 122 67 Crystal oscillator (X1 and X2) ground pin. When using
an external crystal, do not connect this pin to the board
ground. Instead, connect it to the ground reference of the
VSSOSC
H19 – – external crystal oscillator circuit.
If an external crystal is not used, this pin may be
connected to the board ground.
P1 34 17
P5 52 35
Analog ground.
VSSA R5 – 36 On the PZP package, pin 17 is double-bonded to VSSA
and VREFLOA. This pin must be connect to VSSA.
V7 – –
W1 – –
SPECIAL FUNCTIONS
ERRORSTS U19 92 – O Error status output. This pin has an internal pulldown.

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Table 5-1. Signal Descriptions (continued)

TERMINAL
ZWT PTP PZP I/O/Z
(1)
DESCRIPTION
MUX
NAME BALL PIN PIN
POSITION
NO. NO. NO.
TEST PINS
Flash test pin 1. Reserved for TI. Must be left
FLT1 W12 73 42 I/O
unconnected.
Flash test pin 2. Reserved for TI. Must be left
FLT2 V13 74 43 I/O
unconnected.

(1) I = Input, O = Output, OD = Open Drain, Z = High Impedance

(2) High-Speed SPI-enabled GPIO mux option. This pin mux option is required when using the SPI in High-Speed Mode (HS_MODE = 1
in SPICCR). This mux option is still available when not using the SPI in High-Speed Mode (HS_MODE = 0 in SPICCR).
(3) This pin has output impedance that can be as low as 22 Ω. This output could have fast edges and ringing depending on the
system PCB characteristics. If this is a concern, the user should take precautions such as adding a 39Ω (10% tolerance) series
termination resistor or implement some other termination scheme. It is also recommended that a system-level signal integrity analysis
be performed with the provided IBIS models. The termination is not required if this pin is used for input function.

5.3 Pins With Internal Pullup and Pulldown

Some pins on the device have internal pullups or pulldowns. Table 5-2 lists the pull direction and when it is
active. The pullups on GPIO pins are disabled by default and can be enabled through software. In order to avoid
any floating unbonded inputs, the Boot ROM will enable internal pullups on GPIO pins that are not bonded out
in a particular package. Other pins noted in Table 5-2 with pullups and pulldowns are always on and cannot be
disabled.
Table 5-2. Pins With Internal Pullup and Pulldown
RESET
PIN DEVICE BOOT APPLICATION SOFTWARE
( XRS = 0)
Pullup enable is application-
GPIOx Pullup disabled Pullup disabled(1)
defined
TRST Pulldown active
TCK Pullup active
TMS Pullup active
TDI Pullup active
XRS Pullup active
VREGENZ Pulldown active
ERRORSTS Pulldown active
Other pins No pullup or pulldown present

(1) Pins not bonded out in a given package will have the internal pullups enabled by the Boot ROM.

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5.4 Pin Multiplexing

5.4.1 GPIO Muxed Pins
Table 5-3 shows the GPIO muxed pins. The default for each pin is the GPIO function, secondary functions
can be selected by setting both the GPyGMUXn.GPIOz and GPyMUXn.GPIOz register bits. The GPyGMUXn
register should be configured prior to the GPyMUXn to avoid transient pulses on GPIO's from alternate mux
selections. Columns not shown and blank cells are reserved GPIO Mux settings.
Table 5-3. GPIO Muxed Pins
GPIO Mux Selection(1) (2)
GPIO Index 0, 4, 8, 12 1 2 3 5 6 7 15
GPyGMUXn. 00b, 01b,
00b 01b 11b
GPIOz = 10b, 11b
GPyMUXn.
00b 01b 10b 11b 01b 10b 11b 11b
GPIOz =
GPIO0 EPWM1A (O) SDAA (I/OD)
GPIO1 EPWM1B (O) MFSRB (I/O) SCLA (I/OD)
GPIO2 EPWM2A (O) OUTPUTXBAR1 (O) SDAB (I/OD)
GPIO3 EPWM2B (O) OUTPUTXBAR2 (O) MCLKRB (I/O) OUTPUTXBAR2 (O) SCLB (I/OD)
GPIO4 EPWM3A (O) OUTPUTXBAR3 (O) CANTXA (O)
GPIO5 EPWM3B (O) MFSRA (I/O) OUTPUTXBAR3 (O) CANRXA (I)
GPIO6 EPWM4A (O) OUTPUTXBAR4 (O) EXTSYNCOUT (O) EQEP3A (I) CANTXB (O)
GPIO7 EPWM4B (O) MCLKRA (I/O) OUTPUTXBAR5 (O) EQEP3B (I) CANRXB (I)
GPIO8 EPWM5A (O) CANTXB (O) ADCSOCAO (O) EQEP3S (I/O) SCITXDA (O)
GPIO9 EPWM5B (O) SCITXDB (O) OUTPUTXBAR6 (O) EQEP3I (I/O) SCIRXDA (I)
GPIO10 EPWM6A (O) CANRXB (I) ADCSOCBO (O) EQEP1A (I) SCITXDB (O) UPP-WAIT (I/O)
GPIO11 EPWM6B (O) SCIRXDB (I) OUTPUTXBAR7 (O) EQEP1B (I) SCIRXDB (I) UPP-START (I/O)
GPIO12 EPWM7A (O) CANTXB (O) MDXB (O) EQEP1S (I/O) SCITXDC (O) UPP-ENA (I/O)
GPIO13 EPWM7B (O) CANRXB (I) MDRB (I) EQEP1I (I/O) SCIRXDC (I) UPP-D7 (I/O)
GPIO14 EPWM8A (O) SCITXDB (O) MCLKXB (I/O) OUTPUTXBAR3 (O) UPP-D6 (I/O)
GPIO15 EPWM8B (O) SCIRXDB (I) MFSXB (I/O) OUTPUTXBAR4 (O) UPP-D5 (I/O)
GPIO16 SPISIMOA (I/O) CANTXB (O) OUTPUTXBAR7 (O) EPWM9A (O) SD1_D1 (I) UPP-D4 (I/O)
GPIO17 SPISOMIA (I/O) CANRXB (I) OUTPUTXBAR8 (O) EPWM9B (O) SD1_C1 (I) UPP-D3 (I/O)
GPIO18 SPICLKA (I/O) SCITXDB (O) CANRXA (I) EPWM10A (O) SD1_D2 (I) UPP-D2 (I/O)
GPIO19 SPISTEA (I/O) SCIRXDB (I) CANTXA (O) EPWM10B (O) SD1_C2 (I) UPP-D1 (I/O)
GPIO20 EQEP1A (I) MDXA (O) CANTXB (O) EPWM11A (O) SD1_D3 (I) UPP-D0 (I/O)
GPIO21 EQEP1B (I) MDRA (I) CANRXB (I) EPWM11B (O) SD1_C3 (I) UPP-CLK (I/O)
GPIO22 EQEP1S (I/O) MCLKXA (I/O) SCITXDB (O) EPWM12A (O) SPICLKB (I/O) SD1_D4 (I)
GPIO23 EQEP1I (I/O) MFSXA (I/O) SCIRXDB (I) EPWM12B (O) SPISTEB (I/O) SD1_C4 (I)
GPIO24 OUTPUTXBAR1 (O) EQEP2A (I) MDXB (O) SPISIMOB (I/O) SD2_D1 (I)
GPIO25 OUTPUTXBAR2 (O) EQEP2B (I) MDRB (I) SPISOMIB (I/O) SD2_C1 (I)
GPIO26 OUTPUTXBAR3 (O) EQEP2I (I/O) MCLKXB (I/O) OUTPUTXBAR3 (O) SPICLKB (I/O) SD2_D2 (I)
GPIO27 OUTPUTXBAR4 (O) EQEP2S (I/O) MFSXB (I/O) OUTPUTXBAR4 (O) SPISTEB (I/O) SD2_C2 (I)
GPIO28 SCIRXDA (I) EM1CS4 (O) OUTPUTXBAR5 (O) EQEP3A (I) SD2_D3 (I)
GPIO29 SCITXDA (O) EM1SDCKE (O) OUTPUTXBAR6 (O) EQEP3B (I) SD2_C3 (I)
GPIO30 CANRXA (I) EM1CLK (O) OUTPUTXBAR7 (O) EQEP3S (I/O) SD2_D4 (I)
GPIO31 CANTXA (O) EM1WE (O) OUTPUTXBAR8 (O) EQEP3I (I/O) SD2_C4 (I)
GPIO32 SDAA (I/OD) EM1CS0 (O)
GPIO33 SCLA (I/OD) EM1RNW (O)
GPIO34 OUTPUTXBAR1 (O) EM1CS2 (O) SDAB (I/OD)
GPIO35 SCIRXDA (I) EM1CS3 (O) SCLB (I/OD)
GPIO36 SCITXDA (O) EM1WAIT (I) CANRXA (I)
GPIO37 OUTPUTXBAR2 (O) EM1OE (O) CANTXA (O)
GPIO38 EM1A0 (O) SCITXDC (O) CANTXB (O)
GPIO39 EM1A1 (O) SCIRXDC (I) CANRXB (I)
GPIO40 EM1A2 (O) SDAB (I/OD)
GPIO41 EM1A3 (O) SCLB (I/OD)
GPIO42 SDAA (I/OD) SCITXDA (O)

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Table 5-3. GPIO Muxed Pins (continued)

GPIO Mux Selection(1) (2)
GPIO Index 0, 4, 8, 12 1 2 3 5 6 7 15
GPyGMUXn. 00b, 01b,
00b 01b 11b
GPIOz = 10b, 11b
GPyMUXn.
00b 01b 10b 11b 01b 10b 11b 11b
GPIOz =
GPIO43 SCLA (I/OD) SCIRXDA (I)
GPIO44 EM1A4 (O)
GPIO45 EM1A5 (O)
GPIO46 EM1A6 (O) SCIRXDD (I)
GPIO47 EM1A7 (O) SCITXDD (O)
GPIO48 OUTPUTXBAR3 (O) EM1A8 (O) SCITXDA (O) SD1_D1 (I)
GPIO49 OUTPUTXBAR4 (O) EM1A9 (O) SCIRXDA (I) SD1_C1 (I)
GPIO50 EQEP1A (I) EM1A10 (O) SPISIMOC (I/O) SD1_D2 (I)
GPIO51 EQEP1B (I) EM1A11 (O) SPISOMIC (I/O) SD1_C2 (I)
GPIO52 EQEP1S (I/O) EM1A12 (O) SPICLKC (I/O) SD1_D3 (I)
GPIO53 EQEP1I (I/O) EM1D31 (I/O) EM2D15 (I/O) SPISTEC (I/O) SD1_C3 (I)
GPIO54 SPISIMOA (I/O) EM1D30 (I/O) EM2D14 (I/O) EQEP2A (I) SCITXDB (O) SD1_D4 (I)
GPIO55 SPISOMIA (I/O) EM1D29 (I/O) EM2D13 (I/O) EQEP2B (I) SCIRXDB (I) SD1_C4 (I)
GPIO56 SPICLKA (I/O) EM1D28 (I/O) EM2D12 (I/O) EQEP2S (I/O) SCITXDC (O) SD2_D1 (I)
GPIO57 SPISTEA (I/O) EM1D27 (I/O) EM2D11 (I/O) EQEP2I (I/O) SCIRXDC (I) SD2_C1 (I)
GPIO58 MCLKRA (I/O) EM1D26 (I/O) EM2D10 (I/O) OUTPUTXBAR1 (O) SPICLKB (I/O) SD2_D2 (I) SPISIMOA(3) (I/O)
GPIO59 MFSRA (I/O) EM1D25 (I/O) EM2D9 (I/O) OUTPUTXBAR2 (O) SPISTEB (I/O) SD2_C2 (I) SPISOMIA(3) (I/O)
GPIO60 MCLKRB (I/O) EM1D24 (I/O) EM2D8 (I/O) OUTPUTXBAR3 (O) SPISIMOB (I/O) SD2_D3 (I) SPICLKA(3) (I/O)
GPIO61 MFSRB (I/O) EM1D23 (I/O) EM2D7 (I/O) OUTPUTXBAR4 (O) SPISOMIB (I/O) SD2_C3 (I) SPISTEA (3) (I/O)
GPIO62 SCIRXDC (I) EM1D22 (I/O) EM2D6 (I/O) EQEP3A (I) CANRXA (I) SD2_D4 (I)
GPIO63 SCITXDC (O) EM1D21 (I/O) EM2D5 (I/O) EQEP3B (I) CANTXA (O) SD2_C4 (I) SPISIMOB(3) (I/O)
GPIO64 EM1D20 (I/O) EM2D4 (I/O) EQEP3S (I/O) SCIRXDA (I) SPISOMIB(3) (I/O)
GPIO65 EM1D19 (I/O) EM2D3 (I/O) EQEP3I (I/O) SCITXDA (O) SPICLKB(3) (I/O)
GPIO66 EM1D18 (I/O) EM2D2 (I/O) SDAB (I/OD) SPISTEB (3) (I/O)
GPIO67 EM1D17 (I/O) EM2D1 (I/O)
GPIO68 EM1D16 (I/O) EM2D0 (I/O)
GPIO69 EM1D15 (I/O) SCLB (I/OD) SPISIMOC(3) (I/O)
GPIO70 EM1D14 (I/O) CANRXA (I) SCITXDB (O) SPISOMIC(3) (I/O)
GPIO71 EM1D13 (I/O) CANTXA (O) SCIRXDB (I) SPICLKC(3) (I/O)
GPIO72 EM1D12 (I/O) CANTXB (O) SCITXDC (O) SPISTEC (3) (I/O)
GPIO73 EM1D11 (I/O) XCLKOUT (O) CANRXB (I) SCIRXDC (I)
GPIO74 EM1D10 (I/O)
GPIO75 EM1D9 (I/O)
GPIO76 EM1D8 (I/O) SCITXDD (O)
GPIO77 EM1D7 (I/O) SCIRXDD (I)
GPIO78 EM1D6 (I/O) EQEP2A (I)
GPIO79 EM1D5 (I/O) EQEP2B (I)
GPIO80 EM1D4 (I/O) EQEP2S (I/O)
GPIO81 EM1D3 (I/O) EQEP2I (I/O)
GPIO82 EM1D2 (I/O)
GPIO83 EM1D1 (I/O)
GPIO84 SCITXDA (O) MDXB (O) MDXA (O)
GPIO85 EM1D0 (I/O) SCIRXDA (I) MDRB (I) MDRA (I)
GPIO86 EM1A13 (O) EM1CAS (O) SCITXDB (O) MCLKXB (I/O) MCLKXA (I/O)
GPIO87 EM1A14 (O) EM1RAS (O) SCIRXDB (I) MFSXB (I/O) MFSXA (I/O)
GPIO88 EM1A15 (O) EM1DQM0 (O)
GPIO89 EM1A16 (O) EM1DQM1 (O) SCITXDC (O)
GPIO90 EM1A17 (O) EM1DQM2 (O) SCIRXDC (I)
GPIO91 EM1A18 (O) EM1DQM3 (O) SDAA (I/OD)
GPIO92 EM1A19 (O) EM1BA1 (O) SCLA (I/OD)
GPIO93 EM1BA0 (O) SCITXDD (O)

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Table 5-3. GPIO Muxed Pins (continued)

GPIO Mux Selection(1) (2)
GPIO Index 0, 4, 8, 12 1 2 3 5 6 7 15
GPyGMUXn. 00b, 01b,
00b 01b 11b
GPIOz = 10b, 11b
GPyMUXn.
00b 01b 10b 11b 01b 10b 11b 11b
GPIOz =
GPIO94 SCIRXDD (I)
GPIO95
GPIO96 EM2DQM1 (O) EQEP1A (I)
GPIO97 EM2DQM0 (O) EQEP1B (I)
GPIO98 EM2A0 (O) EQEP1S (I/O)
GPIO99 EM2A1 (O) EQEP1I (I/O)
GPIO100 EM2A2 (O) EQEP2A (I) SPISIMOC (I/O)
GPIO101 EM2A3 (O) EQEP2B (I) SPISOMIC (I/O)
GPIO102 EM2A4 (O) EQEP2S (I/O) SPICLKC (I/O)
GPIO103 EM2A5 (O) EQEP2I (I/O) SPISTEC (I/O)
GPIO104 SDAA (I/OD) EM2A6 (O) EQEP3A (I) SCITXDD (O)
GPIO105 SCLA (I/OD) EM2A7 (O) EQEP3B (I) SCIRXDD (I)
GPIO106 EM2A8 (O) EQEP3S (I/O) SCITXDC (O)
GPIO107 EM2A9 (O) EQEP3I (I/O) SCIRXDC (I)
GPIO108 EM2A10 (O)
GPIO109 EM2A11 (O)
GPIO110 EM2WAIT (I)
GPIO111 EM2BA0 (O)
GPIO112 EM2BA1 (O)
GPIO113 EM2CAS (O)
GPIO114 EM2RAS (O)
GPIO115 EM2CS0 (O)
GPIO116 EM2CS2 (O)
GPIO117 EM2SDCKE (O)
GPIO118 EM2CLK (O)
GPIO119 EM2RNW (O)
GPIO120 EM2WE (O) USB0PFLT
GPIO121 EM2OE (O) USB0EPEN
GPIO122 SPISIMOC (I/O) SD1_D1 (I)
GPIO123 SPISOMIC (I/O) SD1_C1 (I)
GPIO124 SPICLKC (I/O) SD1_D2 (I)
GPIO125 SPISTEC (I/O) SD1_C2 (I)
GPIO126 SD1_D3 (I)
GPIO127 SD1_C3 (I)
GPIO128 SD1_D4 (I)
GPIO129 SD1_C4 (I)
GPIO130 SD2_D1 (I)
GPIO131 SD2_C1 (I)
GPIO132 SD2_D2 (I)
GPIO133/
SD2_C2 (I)
AUXCLKIN
GPIO134 SD2_D3 (I)
GPIO135 SCITXDA (O) SD2_C3 (I)
GPIO136 SCIRXDA (I) SD2_D4 (I)
GPIO137 SCITXDB (O) SD2_C4 (I)
GPIO138 SCIRXDB (I)
GPIO139 SCIRXDC (I)
GPIO140 SCITXDC (O)
GPIO141 SCIRXDD (I)
GPIO142 SCITXDD (O)
GPIO143

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Table 5-3. GPIO Muxed Pins (continued)

GPIO Mux Selection(1) (2)
GPIO Index 0, 4, 8, 12 1 2 3 5 6 7 15
GPyGMUXn. 00b, 01b,
00b 01b 11b
GPIOz = 10b, 11b
GPyMUXn.
00b 01b 10b 11b 01b 10b 11b 11b
GPIOz =
GPIO144
GPIO145 EPWM1A (O)
GPIO146 EPWM1B (O)
GPIO147 EPWM2A (O)
GPIO148 EPWM2B (O)
GPIO149 EPWM3A (O)
GPIO150 EPWM3B (O)
GPIO151 EPWM4A (O)
GPIO152 EPWM4B (O)
GPIO153 EPWM5A (O)
GPIO154 EPWM5B (O)
GPIO155 EPWM6A (O)
GPIO156 EPWM6B (O)
GPIO157 EPWM7A (O)
GPIO158 EPWM7B (O)
GPIO159 EPWM8A (O)
GPIO160 EPWM8B (O)
GPIO161 EPWM9A (O)
GPIO162 EPWM9B (O)
GPIO163 EPWM10A (O)
GPIO164 EPWM10B (O)
GPIO165 EPWM11A (O)
GPIO166 EPWM11B (O)
GPIO167 EPWM12A (O)
GPIO168 EPWM12B (O)

(1) I = Input, O = Output, OD = Open Drain

(2) GPIO Index settings of 9, 10, 11, 13, and 14 are reserved.
(3) High-Speed SPI-enabled GPIO mux option. This pin mux option is required when using the SPI in High-Speed Mode (HS_MODE = 1
in SPICCR). This mux option is still available when not using the SPI in High-Speed Mode (HS_MODE = 0 in SPICCR).

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5.4.2 Input X-BAR

The Input X-BAR is used to route any GPIO input to the ADC, eCAP, and ePWM peripherals as well as
to external interrupts (XINT) (see Figure 5-7). Table 5-4 shows the input X-BAR destinations. For details on
configuring the Input X-BAR, see the Crossbar (X-BAR) chapter of the TMS320F2837xD Dual-Core Real-Time
Microcontrollers Technical Reference Manual .

INPUT7 eCAP1
GPIO0 INPUT8 eCAP2
Asynchronous INPUT9 eCAP3
Synchronous Input X-BAR
INPUT10 eCAP4
GPIOx Sync. + Qual.
INPUT11 eCAP5
INPUT12 eCAP6

INPUT14
INPUT13
INPUT6
INPUT5
INPUT4
INPUT3
INPUT2
INPUT1
TZ1,TRIP1
XINT5 TZ2,TRIP2
XINT4 TZ3,TRIP3
CPU PIE
XINT3
CLA XINT2 TRIP4
XINT1 TRIP5
TRIP7 ePWM
ePWM TRIP8 Modules
X-BAR TRIP9
TRIP10
TRIP11
TRIP12

TRIP6
ADC ADCEXTSOC
EXTSYNCIN1 ePWM and eCAP
EXTSYNCIN2 Sync Chain

INPUTXBAR [1-6] CLB X-BAR

Output X-BAR

Figure 5-7. Input X-BAR

Table 5-4. Input X-BAR Destinations

INPUT DESTINATIONS
INPUT1 EPWM[TZ1,TRIP1], EPWM X-BAR, Output X-BAR
INPUT2 EPWM[TZ2,TRIP2], EPWM X-BAR, Output X-BAR
INPUT3 EPWM[TZ3,TRIP3], EPWM X-BAR, Output X-BAR
INPUT4 XINT1, EPWM X-BAR, Output X-BAR
INPUT5 XINT2, ADCEXTSOC, EXTSYNCIN1, EPWM X-BAR, Output X-BAR
INPUT6 XINT3, EPWM[TRIP6], EXTSYNCIN2, EPWM X-BAR, Output X-BAR
INPUT7 ECAP1
INPUT8 ECAP2
INPUT9 ECAP3
INPUT10 ECAP4
INPUT11 ECAP5
INPUT12 ECAP6
INPUT13 XINT4
INPUT14 XINT5

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5.4.3 Output X-BAR and ePWM X-BAR

The Output X-BAR has eight outputs which can be selected on the GPIO mux as OUTPUTXBARx. The ePWM
X-BAR has eight outputs which are connected to the TRIPx inputs of the ePWM. The sources for both the
Output X-BAR and ePWM X-BAR are shown in Figure 5-8. For details on the Output X-BAR and ePWM X-BAR,
see the Crossbar (X-BAR) chapter of the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical
Reference Manual .
CTRIPOUTH
CTRIPOUTL
(Output X-BAR only)

CMPSSx
CTRIPH
CTRIPL
(ePWM X-BAR only)

ePWM and eCAP EXTSYNCOUT

Sync
OUTPUT1
OUTPUT2
ADCSOCAO ADCSOCAO OUTPUT3
Select Ckt Output OUTPUT4 GPIO
X-BAR
OUTPUT5 Mux
ADCSOCBO OUTPUT6
ADCSOCBO OUTPUT7
Select Ckt OUTPUT8

eCAPx ECAPxOUT

EVT1
EVT2
ADCx EVT3 TRIP4
EVT4 TRIP5
TRIP7 All
INPUT1 ePWM TRIP8
ePWM
INPUT2 X-BAR TRIP9
TRIP10
Modules
INPUT3
INPUT4 TRIP11
Input X-Bar TRIP12
INPUT5
INPUT6
OTHER DESTINATIONS
(see Input X-BAR)
X-BAR Flags
FLT1.COMPH (shared)
FLT1.COMPL

SDFMx
FLT4.COMPH
FLT4.COMPL

Figure 5-8. Output X-BAR and ePWM X-BAR

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5.4.4 USB Pin Muxing

Table 5-5 shows assignment of the alternate USB function mapping. These can be configured with the
GPBAMSEL register.
Table 5-5. Alternate USB Function
GPIO GPBAMSEL SETTING USB FUNCTION
GPIO42 GPBAMSEL[10] = 1b USB0DM
GPIO43 GPBAMSEL[11] = 1b USB0DP

5.4.5 High-Speed SPI Pin Muxing

The SPI module on this device has a high-speed mode. To achieve the highest possible speed, a special GPIO
configuration is used on a single GPIO mux option for each SPI. These GPIOs may also be used by the SPI
when not in high-speed mode (HS_MODE = 0).
To select the mux options that enable the SPI high-speed mode, configure the GPyGMUX and GPyMUX
registers as shown in Table 5-6.
Table 5-6. GPIO Configuration for High-Speed SPI
GPIO SPI SIGNAL MUX CONFIGURATION
SPIA
GPIO58 SPISIMOA GPBGMUX2[21:20]=11b GPBMUX2[21:20]=11b
GPIO59 SPISOMIA GPBGMUX2[23:22]=11b GPBMUX2[23:22]=11b
GPIO60 SPICLKA GPBGMUX2[25:24]=11b GPBMUX2[25:24]=11b
GPIO61 SPISTEA GPBGMUX2[27:26]=11b GPBMUX2[27:26]=11b
SPIB
GPIO63 SPISIMOB GPBGMUX2[31:30]=11b GPBMUX2[31:30]=11b
GPIO64 SPISOMIB GPCGMUX1[1:0]=11b GPCMUX1[1:0]=11b
GPIO65 SPICLKB GPCGMUX1[3:2]=11b GPCMUX1[3:2]=11b
GPIO66 SPISTEB GPCGMUX1[5:4]=11b GPCMUX1[5:4]=11b
SPIC
GPIO69 SPISIMOC GPCGMUX1[11:10]=11b GPCMUX1[11:10]=11b
GPIO70 SPISOMIC GPCGMUX1[13:12]=11b GPCMUX1[13:12]=11b
GPIO71 SPICLKC GPCGMUX1[15:14]=11b GPCMUX1[15:14]=11b
GPIO72 SPISTEC GPCGMUX1[17:16]=11b GPCMUX1[17:16]=11b

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5.5 Connections for Unused Pins

For applications that do not need to use all functions of the device, Table 5-7 lists acceptable conditioning for any
unused pins. When multiple options are listed in Table 5-7, any are acceptable. Pins not listed in Table 5-7 must
be connected according to Section 5.2.1.
Table 5-7. Connections for Unused Pins
SIGNAL NAME ACCEPTABLE PRACTICE
Analog
VREFHIx Tie to VDDA
VREFLOx Tie to VSSA
• No Connect
ADCINx • Tie to VSSA

Digital
• No connection (input mode with internal pullup enabled)
GPIOx • No connection (output mode with internal pullup disabled)
• Pullup or pulldown resistor (any value resistor, input mode, and with internal pullup disabled)

X1 Tie to VSS
X2 No Connect
• No Connect
TCK • Pullup resistor

• No Connect
TDI • Pullup resistor

TDO No Connect
TMS No Connect
TRST Pulldown resistor (2.2 kΩ or smaller)
VREGENZ Tie to VDDIO. VREG is not supported.
ERRORSTS No Connect
FLT1 No Connect
FLT2 No Connect
Power and Ground
VDD All VDD pins must be connected per Section 5.2.1.
VDDA If a dedicated analog supply is not used, tie to VDDIO.
VDDIO All VDDIO pins must be connected per Section 5.2.1.
VDD3VFL Must be tied to VDDIO
VDDOSC Must be tied to VDDIO
VSS All VSS pins must be connected to board ground.
VSSA If a dedicated analog ground is not used, tie to VSS.
VSSOSC If an external crystal is not used, this pin may be connected to the board ground.

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN MAX(1) (2) UNIT
VDDIO with respect to VSS –0.3 4.6
VDD3VFL with respect to VSS –0.3 4.6
Supply voltage V
VDDOSC with respect to VSS –0.3 4.6
VDD with respect to VSS –0.3 1.5
Analog voltage VDDA with respect to VSSA –0.3 4.6 V
Input voltage VIN (3.3 V) –0.3 4.6 V
Output voltage VO –0.3 4.6 V
Digital/analog input (per pin), IIK
–20 20
(VIN < VSS/VSSA or VIN > VDDIO/VDDA)(3)
Input clamp current mA
Total for all inputs, IIKTOTAL
–20 20
(VIN < VSS/VSSA or VIN > VDDIO/VDDA)
Output current Digital output (per pin), IOUT –20 20 mA
Free-Air temperature TA –40 125 °C
Operating junction temperature TJ –40 150 °C
Storage temperature(4) Tstg –65 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Section 6.4 is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) Continuous clamp current per pin is ±2 mA. Do not operate in this condition continuously as VDDIO/VDDA voltage may internally rise and
impact other electrical specifications.
(4) Long-term high-temperature storage or extended use at maximum temperature conditions may result in a reduction of overall device
life. For additional information, see Semiconductor and IC Package Thermal Metrics.

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6.2 ESD Ratings – Commercial

VALUE UNIT
TMS320F28379D, TMS320F28376D, TMS320F28377D, TMS320F28375D, and TMS320F23874D in 337-ball ZWT package
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V(ESD) Electrostatic discharge (ESD) Charged-device model (CDM), per JEDEC specification JESD22- ±500 V
C101 or ANSI/ESDA/JEDEC JS-002(2)
TMS320F28377D, TMS320F28379D, TMS320F28376D, TMS320F28375D, TMS320F28378D, and TMS320F23874D in 176-pin PTP
package
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V(ESD) Electrostatic discharge (ESD) Charged-device model (CDM), per JEDEC specification JESD22- ±500 V
C101 or ANSI/ESDA/JEDEC JS-002(2)
TMS320F23875D in 100-pin PZP package
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V(ESD) Electrostatic discharge (ESD) Charged-device model (CDM), per JEDEC specification JESD22- ±500 V
C101 or ANSI/ESDA/JEDEC JS-002(2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings – Automotive

VALUE UNIT
TMS320F28379D-Q1 and TMS320F28377D-Q1 in 337-ball ZWT package
Human body model (HBM), per All pins ±2000
AEC Q100-002(1)
V(ESD) Electrostatic discharge Charged device model (CDM), All pins ±500 V
per AEC Q100-011
Corner balls on 337-ball ZWT: ±750
A1, A19, W1, W19
TMS320F28379D-Q1 and TMS320F28377D-Q1 in 176-pin PTP package
Human body model (HBM), per All pins ±2000
AEC Q100-002(1)
V(ESD) Electrostatic discharge Charged device model (CDM), All pins ±500 V
per AEC Q100-011
Corner pins on 176-pin PTP: ±750
1, 44, 45, 88, 89, 132, 133, 176

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.4 Recommended Operating Conditions

MIN NOM MAX UNIT
Device supply voltage, I/O, VDDIO (1) 3.14 3.3 3.47 V
Device supply voltage, VDD 1.14 1.2 1.26 V
Supply ground, VSS 0 V
Analog supply voltage, VDDA 3.14 3.3 3.47 V
Analog ground, VSSA 0 V
T version –40 105
Junction temperature, TJ S version(2) –40 125 °C
Q version (AEC Q100 qualification)(2) –40 150
Free-Air temperature, TA Q version (AEC Q100 qualification) –40 125 °C

(1) VDDIO, VDD3VFL, and VDDOSC should be maintained within 0.3 V of each other.
(2) Operation above TJ = 105°C for extended duration will reduce the lifetime of the device. See Calculating Useful Lifetimes of Embedded
Processors for more information.

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6.5 Power Consumption Summary

Current values listed in this section are representative for the test conditions given and not the absolute
maximum possible. The actual device currents in an application will vary with application code and pin
configurations. Section 6.5.1 shows the device current consumption at 200-MHz SYSCLK.

6.5.1 Device Current Consumption at 200-MHz SYSCLK

IDD IDDIO (1) IDDA IDD3VFL
MODE TEST CONDITIONS
TYP(5) MAX(4) TYP(5) MAX(4) TYP(5) MAX(4) TYP(5) MAX(4)

• Code is running out of RAM.(6)

• All I/O pins are left unconnected.
• Peripherals not active have their
Operational 325 mA 495 mA 30 mA 13 mA 20 mA 33 mA 40 mA
clocks disabled.
• FLASH is read and in active state.
• XCLKOUT is enabled at SYSCLK/4.

• Both CPU1 and CPU2 are in IDLE

mode.
IDLE 105 mA 250 mA 3 mA 10 mA 10 µA 150 µA 10 µA 150 µA
• Flash is powered down.
• XCLKOUT is turned off.

• Both CPU1 and CPU2 are in

STANDBY mode.
STANDBY 30 mA 170 mA 3 mA 10 mA 5 µA 150 µA 10 µA 150 µA
• Flash is powered down.
• XCLKOUT is turned off.

• CPU1 watchdog is running.

HALT(2) • Flash is powered down. 1.5 mA 120 mA 750 µA 2 mA 5 µA 150 µA 10 µA 150 µA

• XCLKOUT is turned off.

• CPU1.M0 and CPU1.M1 RAMs are

in low-power data retention mode.
HIBERNATE(3) 300 µA 5 mA 750 µA 2 mA 5 µA 75 µA 1 µA 50 µA
• CPU2.M0 and CPU2.M1 RAMs are
in low-power data retention mode.

• CPU1 is running from RAM.

• CPU2 is running from Flash.
• All I/O pins are left unconnected.
• Peripheral clocks are disabled.
Flash • CPU1 is performing Flash Erase and 242 mA 360 mA 3 mA 10 mA 10 µA 150 µA 53 mA 65 mA
Erase/Program(7)
Programming.
• CPU2 is accessing Flash locations to
keep bank active.
• XCLKOUT is turned off.

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6.5.1 Device Current Consumption at 200-MHz SYSCLK (continued)

IDD IDDIO (1) IDDA IDD3VFL
MODE TEST CONDITIONS
TYP(5) MAX(4) TYP(5) MAX(4) TYP(5) MAX(4) TYP(5) MAX(4)

• CPU is held in reset via external low

RESET signal driven onto XRSn 10 mA 20 mA 0.01 mA 0.8 mA 0.02 mA 1 mA 2.5 mA 8 mA

• XRSn held low through power-up

(1) IDDIO current is dependent on the electrical loading on the I/O pins.
(2) CPU2 must go into IDLE mode before CPU1 enters HALT mode.
(3) CPU2 must go into reset/IDLE/STANDBY mode before CPU1 enters HIBERNATE mode.
(4) MAX: Vmax, 125°C
(5) TYP: Vnom, 30°C
(6) The following is executed in a loop on CPU1:
• All of the communication peripherals are exercised in loop-back mode: CAN-A to CAN-B; SPI-A to SPI-C; SCI-A to SCI-D; I2C-A to
I2C-B; McBSP-A to McBSP-B; USB
• SDFM1 to SDFM4 active
• ePWM1 to ePWM12 generate 400-kHz PWM output on 24 pins
• CPU TIMERs active
• DMA does 32-bit burst transfers
• CLA1 does multiply-accumulate tasks
• All ADCs perform continuous conversion
• All DACs ramp voltage up/down at 150 kHz
• CMPSS1 to CMPSS8 active

The following is executed in a loop on CPU2:

• CPU TIMERs active
• CLA1 does multiply-accumulate tasks
• VCU does complex multiply/accumulate with parallel load
• TMU calculates a cosine
• FPU does multiply/accumulate with parallel load
(7) Brownout events during flash programming can corrupt flash data. Programming environments using alternate power sources (such as
a USB programmer) must be capable of supplying the rated current for the device and other system components with sufficient margin
to avoid supply brownout conditions.

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6.5.2 Current Consumption Graphs

Figure 6-1 and Figure 6-2 are a typical representation of the relationship between frequency and current
consumption/power on the device. The operational test from Section 6.5.1 was run across frequency at Vmax and
high temperature. Actual results will vary based on the system implementation and conditions.

0.5

0.45

0.4

0.35

0.3
Current (A)

0.25

0.2

0.15

0.1

0.05

0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200

SYSCLK (MHz)
VDD VDDIO VDDA VDD3VFL

Figure 6-1. Operational Current Versus Frequency

0.9

0.8

0.7

0.6
Power (W)

0.5

0.4

0.3

0.2

0.1

0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200

SYSCLK (MHz)
Power

Figure 6-2. Power Versus Frequency

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Leakage current will increase with operating temperature in a nonlinear manner. The difference in VDD current
between TYP and MAX conditions can be seen in Figure 6-3. The current consumption in HALT mode is
primarily leakage current as there is no active switching if the internal oscillator has been powered down.
Figure 6-3 shows the typical leakage current across temperature. The device was placed into HALT mode under
nominal voltage conditions.

Figure 6-3. IDD Leakage Current Versus Temperature

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6.5.3 Reducing Current Consumption

The F2837xD devices provide some methods to reduce the device current consumption:
• Any one of the four low-power modes—IDLE, STANDBY, HALT, and HIBERNATE—could be entered during
idle periods in the application.
• The flash module may be powered down if the code is run from RAM.
• Disable the pullups on pins that assume an output function.
• Each peripheral has an individual clock-enable bit (PCLKCRx). Reduced current consumption may be
achieved by turning off the clock to any peripheral that is not used in a given application. Table 6-1 indicates
the typical current reduction that may be achieved by disabling the clocks using the PCLKCRx register.
• To realize the lowest VDDA current consumption in a low-power mode, see the respective analog chapter
of the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual to ensure each
module is powered down as well.
Table 6-1. Current on VDD Supply by Various
Peripherals (at 200 MHz)
PERIPHERAL IDD CURRENT
MODULE(1) (2) REDUCTION (mA)
ADC(3) 3.3
CAN 3.3
CLA 1.4
CMPSS(3) 1.4
CPUTIMER 0.3
DAC(3) 0.6
DMA 2.9
eCAP 0.6
EMIF1 2.9
EMIF2 2.6
ePWM1 to ePWM4(4) 4.5
ePWM5 to ePWM12(4) 1.7
HRPWM(4) 1.7
I2C 1.3
McBSP 1.6
SCI 0.9
SDFM 2
SPI 0.5
uPP 7.3
USB and AUXPLL at 60 MHz 23.8

(1) At Vmax and 125°C.

(2) All peripherals are disabled upon reset. Use the PCLKCRx
register to individually enable peripherals. For peripherals with
multiple instances, the current quoted is for a single module.
(3) This number represents the current drawn by the digital portion
of the ADC, CMPSS, and DAC modules.
(4) The ePWM is at /2 of SYSCLK.

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6.6 Electrical Characteristics

over recommended operating conditions (unless otherwise noted)
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
IOH = IOH MIN VDDIO * 0.8
VOH High-level output voltage V
IOH = –100 μA VDDIO – 0.2
IOL = IOL MAX 0.4
VOL Low-level output voltage V
IOL = 100 µA 0.2
IOH High-level output source current for all output pins –4 mA
IOL Low-level output sink current for all output pins 4 mA
GPIO0–GPIO7,
High-level input voltage GPIO42–GPIO43, VDDIO * 0.7 VDDIO + 0.3
VIH GPIO46–GPIO47 V
(3.3 V)
All other pins 2.0 VDDIO + 0.3
VIL Low-level input voltage (3.3 V) VSS – 0.3 0.8 V
VHYSTERESIS Input hysteresis 150 mV
Digital inputs with VDDIO = 3.3 V
Ipulldown Input current 120 µA
pulldown(1) VIN = VDDIO
Digital inputs with pullup VDDIO = 3.3 V
Ipullup Input current 150 µA
enabled(1) VIN = 0 V
Pullups disabled
Digital 2
0 V ≤ VIN ≤ VDDIO
Analog (except
ILEAK Pin leakage 2 µA
ADCINB0 or DACOUTx)
0 V ≤ VIN ≤ VDDA
ADCINB0 2 11(2)
DACOUTx 66
CI Input capacitance 2 pF
VDDIO-POR VDDIO power-on reset voltage 2.3 V

(1) See Table 5-2 for a list of pins with a pullup or pulldown.
(2) The MAX input leakage shown on ADCINB0 is at high temperature.

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6.7 Thermal Resistance Characteristics

6.7.1 ZWT Package
°C/W(1) AIR FLOW (lfm)(2)
RΘJC Junction-to-case thermal resistance 8.3 N/A
RΘJB Junction-to-board thermal resistance 11.6 N/A
RΘJA (High k PCB) Junction-to-free air thermal resistance 21.5 0
19.0 150
RΘJMA Junction-to-moving air thermal resistance 17.8 250
16.5 500
0.2 0
0.3 150
PsiJT Junction-to-package top
0.4 250
0.5 500
11.4 0
11.3 150
PsiJB Junction-to-board
11.2 250
11.0 500

(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on
a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
• JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
• JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
(2) lfm = linear feet per minute

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6.7.2 PTP Package

°C/W(1) AIR FLOW (lfm)(2)
RΘJC Junction-to-case thermal resistance 6.97 N/A
RΘJB Junction-to-board thermal resistance 6.05 N/A
RΘJA (High k PCB) Junction-to-free air thermal resistance 17.8 0
12.8 150
RΘJMA Junction-to-moving air thermal resistance 11.4 250
10.1 500
0.11 0
0.24 150
PsiJT Junction-to-package top
0.33 250
0.42 500
6.1 0
5.5 150
PsiJB Junction-to-board
5.4 250
5.3 500

6.7.3 PZP Package

°C/W(1) AIR FLOW (lfm)(2)
RΘJC Junction-to-case thermal resistance 4.3 N/A
RΘJB Junction-to-board thermal resistance 5.9 N/A
RΘJA (High k PCB) Junction-to-free air thermal resistance 19.1 0
14.3 150
RΘJMA Junction-to-moving air thermal resistance 12.8 250
11.4 500
0.03 0
0.09 150
PsiJT Junction-to-package top
0.12 250
0.20 500
6.0 0
5.5 150
PsiJB Junction-to-board
5.5 250
5.3 500

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6.8 Thermal Design Considerations

Based on the end application design and operational profile, the IDD and IDDIO currents could vary. Systems
that exceed the recommended maximum power dissipation in the end product may require additional thermal
enhancements. Ambient temperature (TA) varies with the end application and product design. The critical factor
that affects reliability and functionality is TJ, the junction temperature, not the ambient temperature. Hence, care
should be taken to keep TJ within the specified limits. Tcase should be measured to estimate the operating
junction temperature TJ. Tcase is normally measured at the center of the package top-side surface. The thermal
application report Semiconductor and IC Package Thermal Metrics helps to understand the thermal metrics and
definitions.

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6.9 System
6.9.1 Power Sequencing
6.9.1.1 Signal Pin Requirements
Before powering the device, no voltage larger than 0.3 V above VDDIO can be applied to any digital pin, and no
voltage larger than 0.3 V above VDDA can be applied to any analog pin (including VREFHI).
6.9.1.2 VDDIO, VDDA, VDD3VFL, and VDDOSC Requirements
The 3.3-V supplies should be powered up together and kept within 0.3 V of each other during functional
operation.
6.9.1.3 VDD Requirements
The internal VREG is not supported. The VREGENZ pin must be tied to VDDIO and an external source used to
supply 1.2 V to VDD. During the ramp, VDD should be kept no more than 0.3 V above VDDIO.
VDDOSC and VDD must be powered on and off at the same time. VDDOSC should not be powered on when VDD
is off. For applications not powering VDDOSC and VDD at the same time, see the "INTOSC: VDDOSC Powered
Without VDD Can Cause INTOSC Frequency Drift" advisory in the TMS320F2837xD Dual-Core Real-Time MCUs
Silicon Errata.
There is an internal 12.8-mA current source from VDD3VFL to VDD when the flash banks are active. When the
flash banks are active and the device is in a low-activity state (for example, a low-power mode), this internal
current source can cause VDD to rise to approximately 1.3 V. There will be zero current load to the external
system VDD regulator while in this condition. This is not an issue for most regulators; however, if the system
voltage regulator requires a minimum load for proper operation, then an external 82Ω resistor can be added to
the board to ensure a minimal current load on VDD. See the "Low-Power Modes: Power Down Flash or Maintain
Minimum Device Activity" advisory in the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.
6.9.1.4 Supply Ramp Rate
The supplies should ramp to full rail within 10 ms. Section 6.9.1.4.1 shows the supply ramp rate.
6.9.1.4.1 Supply Ramp Rate

MIN MAX UNIT

Supply ramp rate VDDIO, VDD, VDDA, VDD3VFL, VDDOSC with respect to VSS 330 105 V/s

6.9.1.5 Supply Supervision

An internal power-on-reset (POR) circuit keeps the I/Os in a high-impedance state during power up. External
supply voltage supervisors (SVS) can be used to monitor the voltage on the 3.3-V and 1.2-V rails and drive XRS
low when supplies are outside operational specifications.

Note
If the supply voltage is held near the POR threshold, then the device may drive periodic resets onto
the XRS pin.

6.9.2 Reset Timing

XRS is the device reset pin. It functions as an input and open-drain output. The device has a built-in power-on
reset (POR). During power up, the POR circuit drives the XRS pin low. A watchdog or NMI watchdog reset also
drives the pin low. An external circuit may drive the pin to assert a device reset.
A resistor with a value from 2.2 kΩ to 10 kΩ should be placed between XRS and VDDIO. A capacitor should be
placed between XRS and VSS for noise filtering; the capacitance should be 100 nF or smaller. These values will
allow the watchdog to properly drive the XRS pin to VOL within 512 OSCCLK cycles when the watchdog reset is
asserted. Figure 6-4 shows the recommended reset circuit.

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VDDIO

2.2 kW – 10 kW

XRS

£100 nF

Figure 6-4. Reset Circuit

6.9.2.1 Reset Sources

The following reset sources exist on this device: XRS, WDRS, NMIWDRS, SYSRS, SCCRESET, and
HIBRESET. See the Reset Signals table in the System Control chapter of the TMS320F2837xD Dual-Core
Real-Time Microcontrollers Technical Reference Manual .
The parameter th(boot-mode) must account for a reset initiated from any of these sources.

CAUTION
Some reset sources are internally driven by the device. Some of these sources will drive XRS low.
Use this to disable any other devices driving the boot pins. The SCCRESET and debugger reset
sources do not drive XRS; therefore, the pins used for boot mode should not be actively driven by
other devices in the system. The boot configuration has a provision for changing the boot pins in
OTP; for more details, see the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical
Reference Manual .

6.9.2.2 Reset Electrical Data and Timing

Section 6.9.2.2.1 shows the reset ( XRS) timing requirements. Section 6.9.2.2.2 shows the reset ( XRS)
switching characteristics. Figure 6-5 shows the power-on reset. Figure 6-6 shows the warm reset.
6.9.2.2.1 Reset ( XRS) Timing Requirements

MIN MAX UNIT

th(boot-mode) Hold time for boot-mode pins 1.5 ms
All cases 3.2
Pulse duration, XRS low on
tw(RSL2) Low-power modes used in µs
warm reset 3.2 * (SYSCLKDIV/16)
application and SYSCLKDIV > 16

6.9.2.2.2 Reset ( XRS) Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
Pulse duration, XRS driven low by device after supplies are
tw(RSL1) 100 µs
stable
tw(WDRS) Pulse duration, reset pulse generated by watchdog 512tc(OSCCLK) cycles

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VDDIO, VDDA
(3.3 V)

VDD (1.2 V)

Boot time value = around 1mS

tw(RSL1)
(A)
XRS

Boot ROM
CPU
Execution
Phase
User-code
th(boot-mode)(B) User-code dependent
Boot-Mode
GPIO pins as input
Pins
Peripheral/GPIO function
Boot-ROM execution starts
Based on boot code

I/O Pins GPIO pins as input (pullups are disabled)

User-code dependent

A. The XRS pin can be driven externally by a supervisor or an external pullup resistor, see Section 5.2.1.
B. After reset from any source (see Section 6.9.2.1), the boot ROM code samples Boot Mode pins. Based on the status of the Boot Mode
pin, the boot code branches to destination memory or boot code function. If boot ROM code executes after power-on conditions (in
debugger environment), the boot code execution time is based on the current SYSCLK speed. The SYSCLK will be based on user
environment and could be with or without PLL enabled.

Figure 6-5. Power-on Reset

tw(RSL2)

XRS
User Code
CPU
Execution User Code Boot ROM
Phase
Boot-ROM execution starts
(initiated by any reset source) th(boot-mode)(A)
Boot-Mode
Peripheral/GPIO Function GPIO Pins as Input Peripheral/GPIO Function
Pins
User-Code Execution Starts

I/O Pins User-Code Dependent GPIO Pins as Input (Pullups are Disabled)

User-Code Dependent
A. After reset from any source (see Section 6.9.2.1), the Boot ROM code samples BOOT Mode pins. Based on the status of the Boot
Mode pin, the boot code branches to destination memory or boot code function. If Boot ROM code executes after power-on conditions
(in debugger environment), the Boot code execution time is based on the current SYSCLK speed. The SYSCLK will be based on user
environment and could be with or without PLL enabled.

Figure 6-6. Warm Reset

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6.9.3 Clock Specifications

6.9.3.1 Clock Sources
Table 6-2 lists four possible clock sources. Figure 6-7 provides an overview of the device's clocking system.
Table 6-2. Possible Reference Clock Sources
CLOCK SOURCE MODULES CLOCKED COMMENTS
INTOSC1 Can be used to provide clock for: Internal oscillator 1.
• Watchdog block Zero-pin overhead 10-MHz internal oscillator.
• Main PLL
• CPU-Timer 2

INTOSC2(1) Can be used to provide clock for: Internal oscillator 2.

• Main PLL Zero-pin overhead 10-MHz internal oscillator.
• Auxiliary PLL
• CPU-Timer 2

XTAL Can be used to provide clock for: External crystal or resonator connected between the X1 and X2 pins
• Main PLL or single-ended clock connected to the X1 pin.
• Auxiliary PLL
• CPU-Timer 2

AUXCLKIN Can be used to provide clock for: Single-ended 3.3-V level clock source. GPIO133/AUXCLKIN pin
• Auxiliary PLL should be used to provide the input clock.
• CPU-Timer 2

(1) On reset, internal oscillator 2 (INTOSC2) is the default clock source for both system PLL (OSCCLK) and auxiliary PLL (AUXOSCCLK).

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INTOSC1 To watchdog timers

CLKSRCCTL1 SYSPLLCTL1 SYSCLKDIVSEL

INTOSC2

SYSCLK To GS RAMs, GPIOs,

OSCCLK PLLSYSCLK
Divider NMIWDs, and IPC
X1 (XTAL) System PLL PLLRAWCLK

CPU1.SYSCLK CPU1 CPU1.CPUCLK To local memories

CPU2.SYSCLK CPU2 CPU2.CPUCLK To local memories

CPU1.SYSCLK To ePIEs, LS RAMs,

CLA message RAMs,
CPU2.SYSCLK and DCSMs

One per SYSCLK peripheral

CPU1.PCLKCRx CPUSELx

PERx.SYSCLK To peripherals

CPU2.PCLKCRx

One per LSPCLK peripheral

LOSPCP
CPU1.PCLKCRx CPUSELx

LSP To SCIs, SPIs, and

PERx.LSPCLK
Divider McBSPs

CPU2.PCLKCRx

One per ePWM

EPWMCLKDIV CPUSELx
CPU1.PCLKCRx

PLLSYSCLK /1
EPWMCLK To ePWMs
/2

CPU2.PCLKCRx
To CLBs

HRPWM

CPU1.PCLKCRx

HRPWMCLK To HRPWM Registers

One per CAN module

CPUSELx

CLKSRCCTL2

CAN Bit Clock To CANs

AUXCLKIN

CLKSRCCTL2 AUXPLLCTL1 AUXCLKDIVSEL

AUXOSCCLK AUXCLK AUXPLLCLK To USB bit clock

Divider
Auxiliary PLL AUXPLLRAWCLK

Figure 6-7. Clocking System

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6.9.3.2 Clock Frequencies, Requirements, and Characteristics

This section provides the frequencies and timing requirements of the input clocks, PLL lock times, frequencies of
the internal clocks, and the frequency and switching characteristics of the output clock.
6.9.3.2.1 Input Clock Frequency and Timing Requirements, PLL Lock Times
Section 6.9.3.2.1.1 shows the frequency requirements for the input clocks. The Crystal Equivalent Series
Resistance (ESR) Requirements table shows the crystal equivalent series resistance requirements. Section
6.9.3.2.1.2 shows the X1 input level characteristics when using an external clock source. Section 6.9.3.2.1.4 and
Section 6.9.3.2.1.5 show the timing requirements for the input clocks. Section 6.9.3.2.1.6 shows the PLL lock
times for the Main PLL and the USB PLL.
6.9.3.2.1.1 Input Clock Frequency

MIN MAX UNIT

f(XTAL) Frequency, X1/X2, from external crystal or resonator 10 20 MHz
f(X1) Frequency, X1, from external oscillator 2 25 MHz
f(AUXI) Frequency, AUXCLKIN, from external oscillator 2 60 MHz

6.9.3.2.1.2 X1 Input Level Characteristics When Using an External Clock Source (Not a Crystal)
over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
X1 VIL Valid low-level input voltage –0.3 0.3 * VDDIO V
X1 VIH Valid high-level input voltage 0.7 * VDDIO VDDIO + 0.3 V

6.9.3.2.1.3 XTAL Oscillator Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
X1 VIL Valid low-level input voltage –0.3 0.3 * VDDIO V
X1 VIH Valid high-level input voltage 0.7 * VDDIO VDDIO + 0.3 V

6.9.3.2.1.4 X1 Timing Requirements

MIN MAX UNIT

tf(X1) Fall time, X1 6 ns
tr(X1) Rise time, X1 6 ns
tw(X1L) Pulse duration, X1 low as a percentage of tc(X1) 45% 55%
tw(X1H) Pulse duration, X1 high as a percentage of tc(X1) 45% 55%

6.9.3.2.1.5 AUXCLKIN Timing Requirements

MIN MAX UNIT

tf(AUXI) Fall time, AUXCLKIN 6 ns
tr(AUXI) Rise time, AUXCLKIN 6 ns
tw(AUXL) Pulse duration, AUXCLKIN low as a percentage of tc(XCI) 45% 55%
tw(AUXH) Pulse duration, AUXCLKIN high as a percentage of tc(XCI) 45% 55%

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6.9.3.2.1.6 PLL Lock Times

MIN NOM MAX UNIT

t(PLL) Lock time, Main PLL (X1, from external oscillator) 50 µs + 2500 * tc(OSCCLK) (1) µs
t(USB) Lock time, USB PLL (AUXCLKIN, from external oscillator) 50 µs + 2500 * tc(OSCCLK) (1) µs

(1) The PLL lock time here defines the typical time of execution for the PLL workaround as defined in the TMS320F2837xD Dual-Core
Real-Time MCUs Silicon Errata. Cycle count includes code execution of the PLL initialization routine, which could vary depending on
compiler optimizations and flash wait states. TI recommends using the latest example software from C2000Ware for initializing the
PLLs. For the system PLL, see InitSysPll() or SysCtl_setClock(). For the auxiliary PLL, see InitAuxPll() or SysCtl_setAuxClock().

6.9.3.2.2 Internal Clock Frequencies

Section 6.9.3.2.2.1 provides the clock frequencies for the internal clocks.
6.9.3.2.2.1 Internal Clock Frequencies

MIN NOM MAX UNIT

f(SYSCLK) Frequency, device (system) clock 2 200(2) MHz
tc(SYSCLK) Period, device (system) clock 5(2) 500 ns
Frequency, system PLL output (before SYSCLK
f(PLLRAWCLK) 120 400 MHz
divider)
Frequency, auxiliary PLL output (before AUXCLK
f(AUXPLLRAWCLK) 120 400 MHz
divider)
f(AUXPLL) Frequency, AUXPLLCLK 2 60 60 MHz
f(PLL) Frequency, PLLSYSCLK 2 200(2) MHz
f(LSP) Frequency, LSPCLK 2 200(2) MHz
tc(LSPCLK) Period, LSPCLK 5(2) 500 ns
Frequency, OSCCLK (INTOSC1 or INTOSC2 or
f(OSCCLK) See respective clock MHz
XTAL or X1)
f(EPWM) Frequency, EPWMCLK(1) 100 MHz
f(HRPWM) Frequency, HRPWMCLK 60 100 MHz

(1) For SYSCLK above 100 MHz, the EPWMCLK must be half of SYSCLK.
(2) Using an external clock source. If INTOSC1 or INTOSC2 is used as the clock source, then the maximum frequency is 194 MHz and
the minimum period is 5.15 ns.

6.9.3.2.3 Output Clock Frequency and Switching Characteristics

Section 6.9.3.2.3.1 provides the frequency of the output clock. Section 6.9.3.2.3.2 shows the switching
characteristics of the output clock, XCLKOUT.
6.9.3.2.3.1 Output Clock Frequency

MIN MAX UNIT

f(XCO) Frequency, XCLKOUT 50 MHz

6.9.3.2.3.2 XCLKOUT Switching Characteristics (PLL Bypassed or Enabled)

over recommended operating conditions (unless otherwise noted)
PARAMETER(1) (2) MIN MAX UNIT
tf(XCO) Fall time, XCLKOUT 5 ns
tr(XCO) Rise time, XCLKOUT 5 ns
tw(XCOL) Pulse duration, XCLKOUT low H–2 H+2 ns
tw(XCOH) Pulse duration, XCLKOUT high H–2 H+2 ns

(1) A load of 40 pF is assumed for these parameters.

(2) H = 0.5tc(XCO)

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6.9.3.3 Input Clocks and PLLs

In addition to the internal 0-pin oscillators, multiple external clock source options are available. Figure 6-8 shows
the recommended methods of connecting crystals, resonators, and oscillators to pins X1/X2 (also referred to as
XTAL) and AUXCLKIN.

X1 vssosc X2 X1 vssosc X2

RESONATOR
CRYSTAL

RD C L2 C L1

X1 vssosc X2 GPIO133/AUXCLKIN

3.3V CLK 3.3V CLK

VDD OUT VDD OUT

GND GND

3.3V OSCILLATOR 3.3V OSCILLATOR

Figure 6-8. Connecting Input Clocks to a 2837xD Device

6.9.3.4 XTAL Oscillator

6.9.3.4.1 Introduction
The crystal oscillator in this device is an embedded electrical oscillator that, when paired with a compatible
quartz crystal (or a ceramic resonator), can generate the system clock required by the device.
6.9.3.4.2 Overview
The following sections describe the components of the electrical oscillator and crystal.

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6.9.3.4.2.1 Electrical Oscillator

The electrical oscillator in this device is a Pierce oscillator. It is a positive feedback inverter circuit that requires a
tuning circuit in order to oscillate. When this oscillator is paired with a compatible crystal, a tank circuit is formed.
This tank circuit oscillates at the fundamental frequency of the crystal. On this device, the oscillator is designed
to operate in parallel resonance mode due to the shunt capacitor (C0) and required load capacitors (CL). Figure
6-9 illustrates the components of the electrical oscillator and the tank circuit.

MCU To Rest of Chip

XTAL Oscillator

XCLKOUT
Circuit

Rbias

XCLKOUT
Pierce Inverter
Internal Internal

GPIO
X1

External External

Rd
Crystal

CL1 CL2

VSSOSC
Figure 6-9. Electrical Oscillator Block Diagram

6.9.3.4.2.1.1 Modes of Operation

The electrical oscillator in this device has two modes of operation: crystal mode and single-ended mode.
6.9.3.4.2.1.1.1 Crystal Mode of Operation
In the crystal mode of operation, a quartz crystal with load capacitors has to be connected to X1 and X2. There
is an internal bias resistor for the feedback loop so an external one should not be used. Adding an external bias
resistor will create a parallel resistance with the internal Rbias, moving the bias point of operation and possibly
leading to clipped waveforms, out-of-specification duty cycle, and reduction in the effective negative resistance.
In this mode of operation, the resultant clock on X1 is passed to the rest of the chip. The clock on X1 needs
to meet the VIH and VIL of the comparator. See the XTAL Oscillator Characteristics table for the VIH and VIL
requirements of the comparator.

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6.9.3.4.2.1.1.2 Single-Ended Mode of Operation

In the single-ended mode of operation, a clock signal is connected to X1 with X2 left unconnected. A quartz
crystal should not be used in this mode.
In this mode of operation, the clock on X1 is passed to the rest of the chip. See the X1 Input Level
Characteristics When Using an External Clock Source (Not a Crystal) table for the input requirements of the
buffer.
A single-ended clock may also be connected to GPIO133/AUXCLKIN pin.
6.9.3.4.2.1.2 XTAL Output on XCLKOUT
The output of the electrical oscillator that is fed to the rest of the chip can be brought out on XCLKOUT for
observation by configuring the CLKSRCCTL3.XCLKOUTSEL and XCLKOUTDIVSEL.XCLKOUTDIV registers.
See the GPIO Muxed Pins table for a list of GPIOs that XCLKOUT comes out on.
6.9.3.4.2.2 Quartz Crystal
Electrically, a quartz crystal can be represented by an LCR (Inductor-Capacitor-Resistor) circuit. However, unlike
an LCR circuit, crystals have very high Q due to the low motional resistance and are also very underdamped.
Components of the crystal are shown in Figure 6-10 and explained below.
Quartz Crystal
Internal External

Rm C0 CL

Figure 6-10. Crystal Electrical Representation

Cm (Motional capacitance): Denotes the elasticity of the crystal.

Rm (Motional resistance): Denotes the resistive losses within the crystal. This is not the ESR of the crystal but
can be approximated as such depending on the values of the other crystal components.
Lm (Motional inductance): Denotes the vibrating mass of the crystal.
C0 (Shunt capacitance): The capacitance formed from the two crystal electrodes and stray package
capacitance.
CL (Load capacitance): This is the effective capacitance seen by the crystal at its electrodes. It is external to
the crystal. The frequency ppm specified in the crystal data sheet is usually tied to the CL parameter.
Note that most crystal manufacturers specify CL as the effective capacitance seen at the crystal pins, while
some crystal manufacturers specify CL as the capacitance on just one of the crystal pins. Check with the crystal
manufacturer for how the CL is specified in order to use the correct values in calculations.
From Figure 6-9, CL1 and CL2 are in series; so, to find the equivalent total capacitance seen by the crystal, the
capacitance series formula has to be applied which simply evaluates to [CL1]/2 if CL1 = CL2.

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It is recommended that a stray PCB capacitance be added to this value. 3 pF to 5 pF are reasonable estimates,
but the actual value will depend on the PCB in question.
Note that the load capacitance is a requirement of both the electrical oscillator and crystal. The value chosen has
to satisfy both the electrical oscillator and the crystal.
The effect of CL on the crystal is frequency-pulling. If the effective load capacitance is lower than the target, the
crystal frequency will increase and vice versa. However, the effect of frequency-pulling is usually very minimal
and typically results in less than 10-ppm variation from the nominal frequency.
6.9.3.4.3 Functional Operation

6.9.3.4.3.1 ESR – Effective Series Resistance

Effective Series Resistance is the resistive load the crystal presents to the electrical oscillator at resonance. The
higher the ESR, the lower the Q, and less likely the crystal will start up or maintain oscillation. The relationship
between ESR and the crystal components is indicated below.

2
ESR = Rm * 1 + C0
CL (1)

Note that ESR is not the same as motional resistance of the crystal, but can be approximated as such if the
effective load capacitance is much greater than the shunt capacitance.
6.9.3.4.3.2 Rneg – Negative Resistance
Negative resistance is the impedance presented by the electrical oscillator to the crystal. It is the amount of
energy the electrical oscillator must supply to the crystal to overcome the losses incurred during oscillation. Rneg
depicts a circuit that provides rather than consume energy and can also be viewed as the overall gain of the
circuit.
The generally accepted practice is to have Rneg > 3x ESR to 5x ESR to ensure the crystal starts up under
all conditions. Note that it takes slightly more energy to start up the crystal than it does to sustain oscillation;
therefore, if it can be ensured that the negative resistance requirement is met at start-up, then oscillation
sustenance will not be an issue.
Figure 6-11 and Figure 6-12 show the variation between negative resistance and the crystal components for this
device. As can be seen from the graphs, the crystal shunt capacitance (C0) and effective load capacitance (CL)
greatly influence the negative resistance of the electrical oscillator. Note that these are typical graphs; so, refer to
Table 6-3 for minimum and maximum values for design considerations.
6.9.3.4.3.3 Start-up Time
Start-up time is an important consideration when selecting the components of the crystal circuit. As mentioned
in the Rneg – Negative Resistance section, for reliable start-up across all conditions, it is recommended that the
Rneg > 3x ESR to 5x ESR of the crystal.
Crystal ESR and the dampening resistor (Rd) greatly affect the start-up time. The higher the two values, the
longer the crystal takes to start up. Longer start-up times are usually a sign that the crystal and components are
not a correct match.
Refer to Crystal Oscillator Specifications for the typical start-up times. Note that the numbers specified here are
typical numbers provided for guidance only. Actual start-up time depends heavily on the crystal in question and
the external components.
6.9.3.4.3.4 DL – Drive Level
Drive level refers to how much power is provided by the electrical oscillator and dissipated by the crystal. The
maximum drive level specified in the crystal manufacturer’s data sheet is usually the maximum the crystal can
dissipate without damage or significant reduction in operating life. On the other hand, the drive level specified
by the electrical oscillator is the maximum power it can provide. The actual power provided by the electrical
oscillator is not necessarily the maximum power and depends on the crystal and board components.

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For cases where the actual drive level from the electrical oscillator exceeds the maximum drive level
specification of the crystal, a dampening resistor (Rd) should be installed to limit the current and reduce the
power dissipated by the crystal. Note that Rd reduces the circuit gain; and therefore, the actual value to use
should be evaluated to make sure all other conditions for start-up and sustained oscillation are met.
6.9.3.4.4 How to Choose a Crystal
Using Crystal Oscillator Specifications as a reference:
1. Pick a crystal frequency (for example, 20 MHz).
2. Check that the ESR of the crystal <=50 Ω per specifications for 20 MHz.
3. Check that the load capacitance requirement of the crystal manufacturer is within 6 pF and 12 pF per
specifications for 20 MHz.
• As mentioned, CL1 and CL2 are in series; so, provided CL1 = CL2, effective load capacitance CL =
[CL1]/2.
• Adding board parasitics to this results in CL = [CL1]/2 + Cstray
4. Check that the maximum drive level of the crystal >= 1 mW. If this requirement is not met, a dampening
resistor Rd can be used. Refer to DL – Drive Level on other points to consider when using Rd.
6.9.3.4.5 Testing
It is recommended that the user have the crystal manufacturer completely characterize the crystal with their
board to ensure the crystal always starts up and maintains oscillation.
Below is a brief overview of some measurements that can be performed:
Due to how sensitive the crystal circuit is to capacitance, it is recommended that scope probes not be connected
to X1 and X2. If scope probes must be used to monitor X1/X2, an active probe with less than 1-pF input
capacitance should be used.
Frequency
1. Bring out the XTAL on XCLKOUT.
2. Measure this frequency as the crystal frequency.
Negative Resistance
1. Bring out the XTAL on XCLKOUT.
2. Place a potentiometer in series with the crystal between the load capacitors.
3. Increase the resistance of the potentiometer until the clock on XCLKOUT stops.
4. This resistance plus the crystal’s actual ESR is the negative resistance of the electrical oscillator.
Start-Up Time
1. Turn off the XTAL.
2. Bring out the XTAL on XCLKOUT.
3. Turn on the XTAL and measure how long it takes the clock on XCLKOUT to stay within 45% and 55% duty
cycle.
6.9.3.4.6 Common Problems and Debug Tips
Crystal Fails to Start Up
• Go through the How to Choose a Crystal section and make sure there are no violations.
Crystal Takes a Long Time to Start Up
• If a dampening resistor Rd is installed, it is too high.
• If no dampening resistor is installed, either the crystal ESR is too high or the overall circuit gain is too low due
to high load capacitance.

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6.9.3.4.7 Crystal Oscillator Specifications

6.9.3.4.7.1 Crystal Oscillator Electrical Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ESR MAX = 110 Ω
f = 10 MHz CL1 = CL2 = 24 pF 4 ms
Start-up C0 = 7 pF
time(1) ESR MAX = 50 Ω
f = 20 MHz CL1 = CL2 = 24 pF 2 ms
C0 = 7 pF
Crystal drive level (DL) 1 mW

(1) Start-up time is dependent on the crystal and tank circuit components. TI recommends that the crystal vendor characterize the
application with the chosen crystal.

6.9.3.4.7.2 Crystal Equivalent Series Resistance (ESR) Requirements

For the Crystal Equivalent Series Resistance (ESR) Requirements table:
1. Crystal shunt capacitance (C0) should be less than or equal to 7 pF.
2. ESR = Negative Resistance/3
Table 6-3. Crystal Equivalent Series Resistance (ESR) Requirements
MAXIMUM ESR (Ω) MAXIMUM ESR (Ω)
CRYSTAL FREQUENCY (MHz)
(CL1 = CL2 = 12 pF) (CL1 = CL2 = 24 pF)
10 55 110
12 50 95
14 50 90
16 45 75
18 45 65
20 45 50

Negative Resistance vs. 10MHz Crystal

3000
C0 (pF)
1
2500 3
5
7
Rneg (Ohms)

2000 9

1500

1000

500

0
2 4 6 8 10 12 14 16
Effective CL (pF)

Figure 6-11. Negative Resistance Variation at 10 MHz

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Negative Resistance vs. 20MHz Crystal

1600
C0 (pF)
1400 1
3
1200 5
7

Rneg (Ohms)
1000 9

800

600

400

200

0
2 4 6 8 10 12 14 16
Effective CL (pF)

Figure 6-12. Negative Resistance Variation at 20 MHz

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6.9.3.5 Internal Oscillators

To reduce production board costs and application development time, all F2837xD devices contain two
independent internal oscillators, referred to as INTOSC1 and INTOSC2. By default, both oscillators are enabled
at power up. INTOSC2 is set as the source for the system reference clock (OSCCLK) and INTOSC1 is set as
the backup clock source. INTOSC1 can also be manually configured as the system reference clock (OSCCLK).
Section 6.9.3.5.1 provides the electrical characteristics of the internal oscillators to determine if this module
meets the clocking requirements of the application.
Section 6.9.3.5.1 provides the electrical characteristics of the two internal oscillators.

Note
This oscillator cannot be used as the PLL source if the PLLSYSCLK is configured to frequencies
above 194 MHz.

6.9.3.5.1 Internal Oscillator Electrical Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f(INTOSC) Frequency, INTOSC1 and INTOSC2 9.7 10.0 10.3 MHz
Frequency stability at room temperature 30°C, Nominal VDD ±0.1%
f(INTOSC-STABILITY) Frequency stability over VDD 30°C ±0.2%
Frequency stability –3.0% 3.0%
f(INTOSC-ST) Start-up and settling time 20 µs

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6.9.4 Flash Parameters

The on-chip flash memory is tightly integrated to the CPU, allowing code execution directly from flash through
128-bit-wide prefetch reads and a pipeline buffer. Flash performance for sequential code is equal to execution
from RAM. Factoring in discontinuities, most applications will run with an efficiency of approximately 80% relative
to code executing from RAM. This flash efficiency lets designers realize a 2× improvement in performance when
migrating from the previous generation of MCUs.
This device also has an OTP (One-Time-Programmable) sector used for the dual code security module (DCSM),
which cannot be erased after it is programmed.
Table 6-4 shows the minimum required flash wait states at different frequencies. Section 6.9.4.1 shows the flash
parameters.
Table 6-4. Flash Wait States
CPUCLK (MHz)
MINIMUM WAIT STATES (1)
EXTERNAL OSCILLATOR OR CRYSTAL INTOSC1 OR INTOSC2
150 < CPUCLK ≤ 200 145 < CPUCLK ≤ 194 3
100 < CPUCLK ≤ 150 97 < CPUCLK ≤ 145 2
50 < CPUCLK ≤ 100 48 < CPUCLK ≤ 97 1
CPUCLK ≤ 50 CPUCLK ≤ 48 0

(1) Minimum required FRDCNTL[RWAIT].

6.9.4.1 Flash Parameters

PARAMETER MIN TYP MAX UNIT
128 data bits + 16 ECC bits 40 300 µs
Program Time(1) 8KW sector 90 180 ms
32KW sector 360 720 ms
Erase Time(2) at < 25 cycles 8KW or 32KW sector 30 55
ms
Erase Time(2) at < 1000 cycles 8KW or 32KW sector 40 350
Erase Time(2) at 2000 cycles 8KW or 32KWsector 50 600
ms
Erase Time(2) at 20k cycles 8KW or 32KW sector 110 4000
Nwec Write/erase cycles per sector 20000 cycles
Write/Erase Cycles for entire Flash 100000
Nwec cycles
(combined all sectors)(3)
Data retention duration at TJ = 20
tretention years
85°C

(1) Program time is at the maximum device frequency. Program time includes overhead of the flash state machine but does not include
the time to transfer the following into RAM:
• Code that uses flash API to program the flash
• Flash API itself
• Flash data to be programmed

In other words, the time indicated in this table is applicable after all the required code/data is available in the device RAM, ready for
programming. The transfer time will significantly vary depending on the speed of the JTAG debug probe used.
Program time calculation is based on programming 144 bits at a time at the specified operating frequency. Program time includes
Program verify by the CPU. The program time does not degrade with write/erase (W/E) cycling, but the erase time does.
Erase time includes Erase verify by the CPU and does not involve any data transfer.
(2) Erase time includes Erase verify by the CPU.
(3) Each sector, by itself, can only be erased/programmed 20,000 times. If you choose to use a sector (or multiple sectors) like an
EEPROM, you can erase/program only those sectors (still limited to 20,000 cycles) without erasing/programming the entire Flash
memory. Therefore, the total number of W/E cycles from a device perspective can exceed 20,000 cycles. However, even this number
should not exceed 100,000 cycles.

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Note
The Main Array flash programming must be aligned to 64-bit address boundaries and each 64-bit
word may only be programmed once per write/erase cycle. For more details, see the "Flash: Minimum
Programming Word Size" advisory in the TMS320F2837xD Dual-Core Real-Time MCUs Silicon
Errata.

6.9.5 RAM Specifications

Table 6-5. CPU1 RAM Parameters

NUMBER NUMBER OF
FETCH TIME READ TIME STORE TIME BURST
RAM TYPE SIZE BUS WIDTH OF BUSSES WAIT
(Cycles) (Cycles) (Cycles) ACCESS
AVAILABLE(1) STATES
GS RAM 128KB 2 2 1 16/32 bits 4 0 No
LS RAM 24KB 2 2 1 16/32 bits 2 0 No
M0 2KB 2 2 1 16/32 bits 1 0 No
M1 2KB 2 2 1 16/32 bits 1 0 No
CLA1 to CPU
Message 256B 2 2 1 16/32 bits 2 0 No
RAM
CPU to CLA1
Message 256B 2 2 1 16/32 bits 2 0 No
RAM
CPU1 to
CPU2
2KB 2 2 1 16/32 bits 4 0 No
Message
RAM
CPU2 to
CPU1
2KB 2 2 1 16/32 bits 4 0 No
Message
RAM

(1) “Number of Buses Available” indicates how many masters (CLA, DMA, CPU) have access to this memory.

Table 6-6. CPU2 RAM Parameters

(1) “Number of Buses Available” indicates how many masters (CLA, DMA, CPU) have access to this memory.

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6.9.6 ROM Specifications

Table 6-7. CPU1 ROM Parameters

NUMBER NUMBER OF
FETCH TIME READ TIME STORE TIME BURST
ROM TYPE SIZE BUS WIDTH OF BUSSES WAIT
(Cycles) (Cycles) (Cycles) ACCESS
AVAILABLE(1) STATES
Boot ROM 64KB 2 2 1 16/32 bits 1 1 No
Secure ROM 64KB 2 2 1 16/32 bits 1 1 No
CLA Data
8KB 2 2 1 16/32 bits 2 0 No
ROM

(1) “Number of Buses Available” indicates how many masters (CLA, DMA, CPU) have access to this memory.

Table 6-8. CPU2 ROM Parameters

(1) “Number of Buses Available” indicates how many masters (CLA, DMA, CPU) have access to this memory.

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6.9.7 Emulation/JTAG
The JTAG port has five dedicated pins: TRST, TMS, TDI, TDO, and TCK. The TRST signal should always be
pulled down through a 2.2-kΩ pulldown resistor on the board. This MCU does not support the EMU0 and EMU1
signals that are present on 14-pin and 20-pin emulation headers. These signals should always be pulled up at
the emulation header through a pair of board pullup resistors ranging from 2.2 kΩ to 4.7 kΩ (depending on the
drive strength of the debugger ports). Typically, a 2.2-kΩ value is used.
See Figure 6-13 to see how the 14-pin JTAG header connects to the MCU’s JTAG port signals. Figure 6-14
shows how to connect to the 20-pin header. The 20-pin JTAG header terminals EMU2, EMU3, and EMU4 are
not used and should be grounded.
The PD (Power Detect) terminal of the JTAG debug probe header should be connected to the board 3.3-V
supply. Header GND terminals should be connected to board ground. TDIS (Cable Disconnect Sense) should
also be connected to board ground. The JTAG clock should be looped from the header TCK output terminal back
to the RTCK input terminal of the header (to sense clock continuity by the JTAG debug probe). Header terminal
RESET is an open-drain output from the JTAG debug probe header that enables board components to be reset
through JTAG debug probe commands (available only through the 20-pin header).
Typically, no buffers are needed on the JTAG signals when the distance between the MCU target and the JTAG
header is smaller than 6 inches (15.24 cm), and no other devices are present on the JTAG chain. Otherwise,
each signal should be buffered. Additionally, for most JTAG debug probe operations at 10 MHz, no series
resistors are needed on the JTAG signals. However, if high emulation speeds are expected (35 MHz or so), 22-Ω
resistors should be placed in series on each JTAG signal.
For more information about hardware breakpoints and watchpoints, see Hardware Breakpoints and Watchpoints
for C28x in CCS.
For more information about JTAG emulation, see the XDS Target Connection Guide.

Distance between the header and the target

should be less than 6 inches (15.24 cm).
2.2 kW
TRST GND
1 2
TMS TMS TRST
3 4
TDI TDI TDIS GND
100 W
MCU 5 6
3.3 V PD KEY
7 8
TDO TDO GND
9 10
RTCK GND

TCK 11 12
TCK GND
4.7 kW 4.7 kW
13 14
3.3 V EMU0 EMU1 3.3 V

Figure 6-13. Connecting to the 14-Pin JTAG Header

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Distance between the header and the target

should be less than 6 inches (15.24 cm). 2.2 kW
TRST GND
1 2
TMS TMS TRST

TDI 3 4
TDI TDIS GND
100 W
MCU 5 6
3.3V PD KEY

TDO 7 8
TDO GND
9 10
RTCK GND

TCK 11 12
TCK GND
4.7 kW 4.7 kW
3.3 V 13 EMU0 EMU1 14 3.3 V
15 16
RESET GND
open
drain 17 18
EMU2 EMU3

A low pulse from the JTAG debug probe 19 EMU4 GND 20

can be tied with other reset sources
to reset the board. GND GND
Figure 6-14. Connecting to the 20-Pin JTAG Header

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6.9.7.1 JTAG Electrical Data and Timing

Section 6.9.7.1.1 lists the JTAG timing requirements. Section 6.9.7.1.2 lists the JTAG switching characteristics.
Figure 6-15 shows the JTAG timing.
6.9.7.1.1 JTAG Timing Requirements

NO. MIN MAX UNIT

1 tc(TCK) Cycle time, TCK 66.66 ns
1a tw(TCKH) Pulse duration, TCK high (40% of tc) 26.66 ns
1b tw(TCKL) Pulse duration, TCK low (40% of tc) 26.66 ns
tsu(TDI-TCKH) Input setup time, TDI valid to TCK high 13 ns
3
tsu(TMS-TCKH) Input setup time, TMS valid to TCK high 13 ns
th(TCKH-TDI) Input hold time, TDI valid from TCK high 7 ns
4
th(TCKH-TMS) Input hold time, TMS valid from TCK high 7 ns

6.9.7.1.2 JTAG Switching Characteristics

over recommended operating conditions (unless otherwise noted)
NO. PARAMETER MIN MAX UNIT
2 td(TCKL-TDO) Delay time, TCK low to TDO valid 6 25 ns

1
1a 1b

TCK

TDO

3 4

TDI/TMS

Figure 6-15. JTAG Timing

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6.9.8 GPIO Electrical Data and Timing

The peripheral signals are multiplexed with general-purpose input/output (GPIO) signals. On reset, GPIO pins
are configured as inputs. For specific inputs, the user can also select the number of input qualification cycles to
filter unwanted noise glitches.
The GPIO module contains an Output X-BAR which allows an assortment of internal signals to be routed to
a GPIO in the GPIO mux positions denoted as OUTPUTXBARx. The GPIO module also contains an Input
X-BAR which is used to route signals from any GPIO input to different IP blocks such as the ADC(s), eCAP(s),
ePWM(s), and external interrupts. For more details, see the X-BAR chapter in the TMS320F2837xD Dual-Core
Real-Time Microcontrollers Technical Reference Manual .
6.9.8.1 GPIO - Output Timing
Section 6.9.8.1.1 shows the general-purpose output switching characteristics. Figure 6-16 shows the general-
purpose output timing.
6.9.8.1.1 General-Purpose Output Switching Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
tr(GPO) Rise time, GPIO switching low to high All GPIOs 8(1) ns
tf(GPO) Fall time, GPIO switching high to low All GPIOs 8(1) ns
tfGPO Toggling frequency, GPO pins 25 MHz

(1) Rise time and fall time vary with load. These values assume a 40-pF load.

GPIO

tr(GPO)
tf(GPO)

Figure 6-16. General-Purpose Output Timing

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6.9.8.2 GPIO - Input Timing

Section 6.9.8.2.1 shows the general-purpose input timing requirements. Figure 6-17 shows the sampling mode.
6.9.8.2.1 General-Purpose Input Timing Requirements

MIN MAX UNIT

QUALPRD = 0 1tc(SYSCLK) cycles
tw(SP) Sampling period
QUALPRD ≠ 0 2tc(SYSCLK) * QUALPRD cycles
tw(IQSW) Input qualifier sampling window tw(SP) * (n(1) – 1) cycles
Synchronous mode 2tc(SYSCLK) cycles
tw(GPI) (2) Pulse duration, GPIO low/high
With input qualifier tw(IQSW) + tw(SP) + 1tc(SYSCLK) cycles

(1) "n" represents the number of qualification samples as defined by GPxQSELn register.
(2) For tw(GPI), pulse width is measured from VIL to VIL for an active low signal and VIH to VIH for an active high signal.

(A)
GPIO Signal GPxQSELn = 1,0 (6 samples)

1 1 0 0 0 0 0 0 0 1 0 0 0 1 1 1 1 1 1 1 1 1

tw(SP) Sampling Period determined

(B)
by GPxCTRL[QUALPRD]
tw(IQSW)
(C)
Sampling Window (SYSCLK cycle * 2 * QUALPRD) * 5

SYSCLK

QUALPRD = 1
(SYSCLK/2)
(D)
Output From
Qualifier
A. This glitch will be ignored by the input qualifier. The QUALPRD bit field specifies the qualification sampling period. It can vary from 00 to
0xFF. If QUALPRD = 00, then the sampling period is 1 SYSCLK cycle. For any other value "n", the qualification sampling period in 2n
SYSCLK cycles (that is, at every 2n SYSCLK cycles, the GPIO pin will be sampled).
B. The qualification period selected through the GPxCTRL register applies to groups of 8 GPIO pins.
C. The qualification block can take either three or six samples. The GPxQSELn Register selects which sample mode is used.
D. In the example shown, for the qualifier to detect the change, the input should be stable for 10 SYSCLK cycles or greater. In other
words, the inputs should be stable for (5 x QUALPRD x 2) SYSCLK cycles. This would ensure 5 sampling periods for detection to occur.
Because external signals are driven asynchronously, an 13-SYSCLK-wide pulse ensures reliable recognition.

Figure 6-17. Sampling Mode

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6.9.8.3 Sampling Window Width for Input Signals

The following section summarizes the sampling window width for input signals for various input qualifier
configurations.
Sampling frequency denotes how often a signal is sampled with respect to SYSCLK.

Sampling frequency = SYSCLK/(2 ´ QUALPRD), if QUALPRD ¹ 0 (2)

Sampling frequency = SYSCLK, if QUALPRD = 0 (3)

Sampling period = SYSCLK cycle ´ 2 ´ QUALPRD, if QUALPRD ¹ 0 (4)

In Equation 2, Equation 3, and Equation 4, SYSCLK cycle indicates the time period of SYSCLK.
Sampling period = SYSCLK cycle, if QUALPRD = 0
In a given sampling window, either 3 or 6 samples of the input signal are taken to determine the validity of the
signal. This is determined by the value written to GPxQSELn register.
Case 1:
Qualification using 3 samples
Sampling window width = (SYSCLK cycle × 2 × QUALPRD) × 2, if QUALPRD ≠ 0
Sampling window width = (SYSCLK cycle) × 2, if QUALPRD = 0
Case 2:
Qualification using 6 samples
Sampling window width = (SYSCLK cycle × 2 × QUALPRD) × 5, if QUALPRD ≠ 0
Sampling window width = (SYSCLK cycle) × 5, if QUALPRD = 0
Figure 6-18 shows the general-purpose input timing.

SYSCLK

GPIOxn

tw(GPI)

Figure 6-18. General-Purpose Input Timing

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6.9.9 Interrupts
Figure 6-19 provides a high-level view of the interrupt architecture.
As shown in Figure 6-19, the devices support five external interrupts (XINT1 to XINT5) that can be mapped onto
any of the GPIO pins.
In this device, 16 ePIE block interrupts are grouped into 1 CPU interrupt. In total, there are 12 CPU interrupt
groups, with 16 interrupts per group.
CPU1.TINT0
CPU1.TIMER0

LPM Logic CPU1.LPMINT

CPU1.W AKEINT
CPU1.WD CPU1.NMIWD NMI
CPU1.W DINT

CPU1
INPUTXBAR4 CPU1.XINT1 Control
GPIO0 CPU1. INT1
GPIO1 INPUTXBAR5 CPU1.XINT2 Control to
Input ePIE
... INPUTXBAR6 CPU1.XINT3 Control INT12
... X-BAR CPU1.XINT4 Control
INPUTXBAR13
GPIOx
INPUTXBAR14 CPU1.XINT5 Control
CPU1.TINT1
CPU1.TIMER1 INT13
CPU1.TINT2
CPU1.TIMER2 INT14
IPC
4 Interrupts

Peripherals

CPU2.NMIWD NMI

CPU2
CPU2.XINT1 Control
CPU2.XINT2 Control INT1
CPU2.XINT3 Control CPU2 to
ePIE INT12
CPU2.XINT4 Control
CPU2.XINT5 Control
CPU2.TINT1
CPU2 .LPMINT CPU2.TIMER1 INT13
LPM Logic CPU2.W AKEINT
CPU2.TINT2
CPU2.WD CPU2.TIMER2 INT14
CPU2.W DINT
CPU2.TINT0
CPU2.TIMER0

Figure 6-19. External and ePIE Interrupt Sources

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6.9.9.1 External Interrupt (XINT) Electrical Data and Timing

Section 6.9.9.1.1 lists the external interrupt timing requirements. Section 6.9.9.1.2 lists the external interrupt
switching characteristics. Figure 6-20 shows the external interrupt timing.
6.9.9.1.1 External Interrupt Timing Requirements

MIN MAX UNIT(1)

Synchronous 2tc(SYSCLK) cycles
tw(INT) Pulse duration, INT input low/high
With qualifier tw(IQSW) + tw(SP) + 1tc(SYSCLK) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.

6.9.9.1.2 External Interrupt Switching Characteristics

over recommended operating conditions (unless otherwise noted)(1)
PARAMETER MIN MAX UNIT
td(INT) Delay time, INT low/high to interrupt-vector fetch(2) tw(IQSW) + 14tc(SYSCLK) tw(IQSW) + tw(SP) + 14tc(SYSCLK) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.
(2) This assumes that the ISR is in a single-cycle memory.

tw(INT)
XINT1, XINT2, XINT3,
XINT4, XINT5

td(INT)

Address bus
Interrupt Vector
(internal)

Figure 6-20. External Interrupt Timing

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6.9.10 Low-Power Modes

This device has three clock-gating low-power modes and a special power-gating mode.
Further details, as well as the entry and exit procedure, for all of the low-power modes can be found in the
Low Power Modes section of the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference
Manual .
6.9.10.1 Clock-Gating Low-Power Modes
IDLE, STANDBY, and HALT modes on this device are similar to those on other C28x devices. Table 6-9
describes the effect on the system when any of the clock-gating low-power modes are entered.
Table 6-9. Effect of Clock-Gating Low-Power Modes on the Device
MODULES/
CPU1 IDLE CPU1 STANDBY CPU2 IDLE CPU2 STANDBY HALT
CLOCK DOMAIN
CPU1.CLKIN Active Gated N/A N/A Gated
CPU1.SYSCLK Active Gated N/A N/A Gated
CPU1.CPUCLK Gated Gated N/A N/A Gated
CPU2.CLKIN N/A N/A Active Gated Gated
CPU2.SYSCLK N/A N/A Active Gated Gated
CPU2.CPUCLK N/A N/A Gated Gated Gated
Clock to modules Active Gated if Active Gated if Gated
Connected to CPUSEL.PERx = CPUSEL.PERx =
PERx.SYSCLK CPU1 CPU2
CPU1.WDCLK Active Active N/A N/A Gated if CLKSRCCTL1.WDHALTI
=0
CPU2.WDCLK N/A N/A Active Active Gated
AUXPLLCLK Active Active Active Active Gated
PLL Powered Powered Powered Powered Software must power down PLL
before entering HALT
INTOSC1 Powered Powered Powered Powered Powered down if
CLKSRCCTL1.WDHALTI = 0
INTOSC2 Powered Powered Powered Powered Powered down if
CLKSRCCTL1.WDHALTI = 0
Flash Powered Powered Powered Powered Software-Controlled
X1/X2 Crystal Powered Powered Powered Powered Powered-Down
Oscillator

6.9.10.2 Power-Gating Low-Power Modes

HIBERNATE mode is the lowest power mode on this device. It is a global low-power mode that gates the
supply voltages to most of the system. HIBERNATE is essentially a controlled power-down with remote wakeup
capability, and can be used to save power during long periods of inactivity. Table 6-10 describes the effects on
the system when the HIBERNATE mode is entered.
Table 6-10. Effect of Power-Gating Low-Power Mode on the Device
MODULES/POWER DOMAINS HIBERNATE
M0 and M1 memories ● Remain on with memory retention if LPMCR.M0M1MODE = 0x00
● Are off when LPMCR.M0M1MODE = 0x01
CPU1, CPU2, digital peripherals Powered down
Dx, LSx, GSx memories Power down, memory contents are lost
I/Os On with output state preserved
Oscillators, PLL, analog Enters Low-Power Mode
peripherals, Flash

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6.9.10.3 Low-Power Mode Wakeup Timing

Section 6.9.10.3.1 shows the IDLE mode timing requirements, Section 6.9.10.3.2 shows the switching
characteristics, and Figure 6-21 shows the timing diagram for IDLE mode.
6.9.10.3.1 IDLE Mode Timing Requirements

MIN MAX UNIT(1)

Without input qualifier 2tc(SYSCLK)
tw(WAKE) Pulse duration, external wake-up signal cycles
With input qualifier 2tc(SYSCLK) + tw(IQSW)

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.

6.9.10.3.2 IDLE Mode Switching Characteristics

over recommended operating conditions (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN MAX UNIT
Delay time, external wake signal to program execution resume (2)

• Wakeup from Flash Without input qualifier 40tc(SYSCLK)

– Flash module in active state With input qualifier 40tc(SYSCLK) + tw(WAKE)

td(WAKE-IDLE) • Wakeup from Flash Without input qualifier 6700tc(SYSCLK) (3) cycles
– Flash module in sleep state With input qualifier 6700tc(SYSCLK) (3) + tw(WAKE)

Without input qualifier 25tc(SYSCLK)

• Wakeup from RAM
With input qualifier 25tc(SYSCLK) + tw(WAKE)

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.
(2) This is the time taken to begin execution of the instruction that immediately follows the IDLE instruction. Execution of an ISR (triggered
by the wake-up signal) involves additional latency.
(3) This value is based on the flash power-up time, which is a function of the SYSCLK frequency, flash wait states (RWAIT), and
FPAC1[PSLEEP]. For more information, see the Flash and OTP Power-Down Modes and Wakeup section of the TMS320F2837xD
Dual-Core Real-Time Microcontrollers Technical Reference Manual . This value can be realized when SYSCLK is 200 MHz, RWAIT is
3, and FPAC1[PSLEEP] is 0x860.

td(WAKE-IDLE)
Address/Data
(internal)

XCLKOUT

tw(WAKE)
(A)
WAKE

A. WAKE can be any enabled interrupt, WDINT or XRS. After the IDLE instruction is executed, a delay of five OSCCLK cycles (minimum)
is needed before the wake-up signal could be asserted.

Figure 6-21. IDLE Entry and Exit Timing Diagram

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Section 6.9.10.3.3 shows the STANDBY mode timing requirements, Section 6.9.10.3.4 shows the switching
characteristics, and Figure 6-22 shows the timing diagram for STANDBY mode.
6.9.10.3.3 STANDBY Mode Timing Requirements

MIN MAX UNIT

QUALSTDBY = 0 | 2tc(OSCCLK) 3tc(OSCCLK)
Pulse duration, external
tw(WAKE-INT) QUALSTDBY > 0 | cycles
wake-up signal (2 + QUALSTDBY) * tc(OSCCLK)
(2 + QUALSTDBY)tc(OSCCLK) (1)

(1) QUALSTDBY is a 6-bit field in the LPMCR register.

6.9.10.3.4 STANDBY Mode Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
Delay time, IDLE instruction executed to
td(IDLE-XCOS) 16tc(INTOSC1) cycles
XCLKOUT stop
Delay time, external wake signal to
program execution resume(1)
• Wakeup from flash
175tc(SYSCLK) + tw(WAKE-INT)
– Flash module in active state
td(WAKE-STBY) cycles
• Wakeup from flash 6700tc(SYSCLK) (2) + tw(WAKE-
– Flash module in sleep state INT)

• Wakeup from RAM 3tc(OSC) + 15tc(SYSCLK) +

tw(WAKE-INT)

(1) This is the time taken to begin execution of the instruction that immediately follows the IDLE instruction. Execution of an ISR (triggered
by the wake-up signal) involves additional latency.
(2) This value is based on the flash power-up time, which is a function of the SYSCLK frequency, flash wait states (RWAIT), and
FPAC1[PSLEEP]. For more information, see the Flash and OTP Power-Down Modes and Wakeup section of the TMS320F2837xD
Dual-Core Real-Time Microcontrollers Technical Reference Manual . This value can be realized when SYSCLK is 200 MHz, RWAIT is
3, and FPAC1[PSLEEP] is 0x860.

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(A) (C) (F)

(B) (D)(E) (G)

Device STANDBY STANDBY Normal Execution

Status
Flushing Pipeline

Wake-up
Signal

tw(WAKE-INT)

td(WAKE-STBY)

OSCCLK

XCLKOUT

td(IDLE-XCOS)

A. IDLE instruction is executed to put the device into STANDBY mode.

B. The LPM block responds to the STANDBY signal, SYSCLK is held for a maximum 16 INTOSC1 clock cycles before being turned off.
This delay enables the CPU pipeline and any other pending operations to flush properly.
C. Clock to the peripherals are turned off. However, the PLL and watchdog are not shut down. The device is now in STANDBY mode. After
the IDLE instruction is executed, a delay of five OSCCLK cycles (minimum) is needed before the wake-up signal could be asserted.
D. The external wake-up signal is driven active.
E. The wake-up signal fed to a GPIO pin to wake up the device must meet the minimum pulse width requirement. Furthermore, this signal
must be free of glitches. If a noisy signal is fed to a GPIO pin, the wakeup behavior of the device will not be deterministic and the device
may not exit low-power mode for subsequent wakeup pulses.
F. After a latency period, the STANDBY mode is exited.
G. Normal execution resumes. The device will respond to the interrupt (if enabled).

Figure 6-22. STANDBY Entry and Exit Timing Diagram

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Section 6.9.10.3.5 shows the HALT mode timing requirements, Section 6.9.10.3.6 shows the switching
characteristics, and Figure 6-23 shows the timing diagram for HALT mode.
6.9.10.3.5 HALT Mode Timing Requirements

MIN MAX UNIT

tw(WAKE-GPIO) Pulse duration, GPIO wake-up signal(1) toscst + 2tc(OSCCLK) cycles
tw(WAKE-XRS) Pulse duration, XRS wake-up signal(1) toscst + 8tc(OSCCLK) cycles

(1) For applications using X1/X2 for OSCCLK, the user must characterize their specific oscillator start-up time as it is dependent on
circuit/layout external to the device. See the Crystal Oscillator Electrical Characteristics section for more information. For applications
using INTOSC1 or INTOSC2 for OSCCLK, see Section 6.9.3.5 for toscst. Oscillator start-up time does not apply to applications using a
single-ended crystal on the X1 pin, as it is powered externally to the device.

6.9.10.3.6 HALT Mode Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
td(IDLE-XCOS) Delay time, IDLE instruction executed to XCLKOUT stop 16tc(INTOSC1) cycles
Delay time, external wake signal end to CPU1 program
execution resume
• Wakeup from flash
75tc(OSCCLK)
– Flash module in active state
td(WAKE-HALT) cycles
• Wakeup from flash
17500tc(OSCCLK) (1)
– Flash module in sleep state

• Wakeup from RAM 75tc(OSCCLK)

(1) This value is based on the flash power-up time, which is a function of the SYSCLK frequency, flash wait states (RWAIT), and
FPAC1[PSLEEP]. For more information, see the Flash and OTP Power-Down Modes and Wakeup section of the TMS320F2837xD
Dual-Core Real-Time Microcontrollers Technical Reference Manual . This value can be realized when SYSCLK is 200 MHz, RWAIT is
3, and FPAC1[PSLEEP] is 0x860.

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(A) (C) (F)

(B) (D)(E) (G)

Device
HALT HALT
Status

Flushing Pipeline Normal

Execution

GPIOn

td(WAKE-HALT)
tw(WAKE-GPIO)

OSCCLK

Oscillator Start-up Time

XCLKOUT

td(IDLE-XCOS)

A. IDLE instruction is executed to put the device into HALT mode.

B. The LPM block responds to the HALT signal, SYSCLK is held for a maximum 16 INTOSC1 clock cycles before being turned off. This
delay enables the CPU pipeline and any other pending operations to flush properly.
C. Clocks to the peripherals are turned off and the PLL is shut down. If a quartz crystal or ceramic resonator is used as the clock
source, the internal oscillator is shut down as well. The device is now in HALT mode and consumes very little power. It is possible to
keep the zero-pin internal oscillators (INTOSC1 and INTOSC2) and the watchdog alive in HALT MODE. This is done by writing a 1
to CLKSRCCTL1.WDHALTI. After the IDLE instruction is executed, a delay of five OSCCLK cycles (minimum) is needed before the
wake-up signal could be asserted.
D. When the GPIOn pin (used to bring the device out of HALT) is driven low, the oscillator is turned on and the oscillator wakeup sequence
is initiated. The GPIO pin should be driven high only after the oscillator has stabilized. This enables the provision of a clean clock signal
during the PLL lock sequence. Because the falling edge of the GPIO pin asynchronously begins the wakeup procedure, care should be
taken to maintain a low noise environment prior to entering and during HALT mode.
E. The wake-up signal fed to a GPIO pin to wake up the device must meet the minimum pulse width requirement. Furthermore, this signal
must be free of glitches. If a noisy signal is fed to a GPIO pin, the wakeup behavior of the device will not be deterministic and the device
may not exit low-power mode for subsequent wakeup pulses.
F. When CLKIN to the core is enabled, the device will respond to the interrupt (if enabled), after some latency. The HALT mode is now
exited.
G. Normal operation resumes.
H. The user must relock the PLL upon HALT wakeup to ensure a stable PLL lock.

Figure 6-23. HALT Entry and Exit Timing Diagram

Note
CPU2 should enter IDLE mode before CPU1 puts the device into HALT mode. CPU1 should verify
that CPU2 has entered IDLE mode using the LPMSTAT register before calling the IDLE instruction to
enter HALT.

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Section 6.9.10.3.7 shows the HIBERNATE mode timing requirements, Section 6.9.10.3.8 shows the switching
characteristics, and Figure 6-24 shows the timing diagram for HIBERNATE mode.
6.9.10.3.7 HIBERNATE Mode Timing Requirements

MIN MAX UNIT

tw(HIBWAKE) Pulse duration, HIBWAKE signal 40 µs
tw(WAKEXRS) Pulse duration, XRS wake-up signal 40 µs

6.9.10.3.8 HIBERNATE Mode Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
td(IDLE-XCOS) Delay time, IDLE instruction executed to XCLKOUT stop 30tc(SYSCLK) cycles
td(WAKE-HIB) Delay time, external wake signal to lORestore function start 1.5 ms

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(A) (B) (C) (D) (F) (G)(H) (I)(J)

(E)

CPU1 HIB CPU1 IDLE

Device Status Device Active HIBERNATE CPU1 Boot ROM IoRestore() or Application Specific Operation
config Instruction

Td(WAKE-HIB)
GPIOHIBWAKEn,
XRSn
tw(HIBWAKEn),
tw(XRSn)

I/O Isolation

Bypassed &
PLLs Enabled Application SpecificOperation
Powered -Down

INTOSC1,INTOSC2,
On Powered Down Powering up On
X1/X2

XCLKCOUT Inactive Application Specific Operation

td(IDLE-XCOS)

A. CPU1 does necessary application-specific context save to M0/M1 memories if required. This includes GPIO state if using I/O Isolation.
Configures the LPMCR register of CPU1 for HIBERNATE mode. Powers down Flash Pump/Bank, USB-PHY, CMPSS, DAC, and ADC
using their register configurations. The application should also power down the PLL and peripheral clocks before entering HIBERNATE.
In dual-core applications, CPU1 should confirm that CPU2 has entered IDLE/STANDBY using the LPMSTAT register.
B. IDLE instruction is executed to put the device into HIBERNATE mode.
C. The device is now in HIBERNATE mode. If configured, I/O isolation is turned on, M0 and M1 memories are retained. CPU1 and
CPU2 are powered down. Digital peripherals are powered down. The oscillators, PLLs, analog peripherals, and Flash are in their
software-controlled Low-Power modes. Dx, LSx, and GSx memories are also powered down, and their memory contents lost.
D. A falling edge on the GPIOHIBWAKEn pin will drive the wakeup of the devices clock sources INTOSC1, INTOSC2, and X1/X2 OSC.
The wakeup source must keep the GPIOHIBWAKEn pin low long enough to ensure full power-up of these clock sources.
E. After the clock sources are powered up, the GPIOHIBWAKEn must be driven high to trigger the wakeup sequence of the remainder of
the device.
F. The BootROM will then begin to execute. The BootROM can distinguish a HIBERNATE wakeup by reading the CPU1.REC.HIBRESETn
bit. After the TI OTP trims are loaded, the BootROM code will branch to the user-defined IoRestore function if it has been configured.
G. At this point, the device is out of HIBERNATE mode, and the application may continue.
H. The IoRestore function is a user-defined function where the application may reconfigure GPIO states, disable I/O isolation, reconfigure
the PLL, restore peripheral configurations, or branch to application code. This is up to the application requirements.
I. If the application has not branched to application code, the BootROM will continue after completing IoRestore. It will disable I/O isolation
automatically if it was not taken care of inside of IoRestore. CPU2 will be brought out of reset at this point as well.
J. BootROM will then boot as determined by the HIBBOOTMODE register. Refer to the ROM Code and Peripheral Booting chapter of the
TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual for more information.

Figure 6-24. HIBERNATE Entry and Exit Timing Diagram

Note
1. If the IORESTOREADDR is configured as the default value, the BootROM will continue its
execution to boot as determined by the HIBBOOTMODE register. Refer to the ROM Code
and Peripheral Booting chapter of the TMS320F2837xD Dual-Core Real-Time Microcontrollers
Technical Reference Manual for more information.
2. The user may choose to disable I/O Isolation at any point in the IoRestore function.
Regardless if the user has disabled Isolation in the IoRestore function or if IoRestore is not
defined, the BootROM will automatically disable isolation before booting as determined by the
HIBBOOTMODE register.

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Note
For applications using both CPU1 and CPU2, TI recommends that the application puts CPU2 in either
IDLE or STANDBY before entering HIBERNATE mode. If any GPIOs are used and the state is to
be preserved, data can be stored in M0/M1 memory of CPU1 to be reconfigured upon wakeup. This
should be done before step A of Figure 6-24.

6.9.11 External Memory Interface (EMIF)

The EMIF provides a means of connecting the CPU to various external storage devices like asynchronous
memories (SRAM, NOR flash) or synchronous memory (SDRAM).
6.9.11.1 Asynchronous Memory Support
The EMIF supports asynchronous memories:
• SRAMs
• NOR Flash memories
There is an external wait input that allows slower asynchronous memories to extend the memory access. The
EMIF module supports up to three chip selects ( EMIF_CS[4:2]). Each chip select has the following individually
programmable attributes:
• Data bus width
• Read cycle timings: setup, hold, strobe
• Write cycle timings: setup, hold, strobe
• Bus turnaround time
• Extended wait option with programmable time-out
• Select strobe option
6.9.11.2 Synchronous DRAM Support
The EMIF memory controller is compliant with the JESD21-C SDR SDRAMs that use a 32-bit or 16-bit data bus.
The EMIF has a single SDRAM chip select ( EMIF_CS[0]).
The address space of the EMIF, for the synchronous memory (SDRAM), lies beyond the 22-bit range of the
program address bus and can only be accessed through the data bus, which places a restriction on the C
compiler being able to work effectively on data in this space. Therefore, when using SDRAM, the user is
advised to copy data (using the DMA) from external memory to RAM before working on it. See the examples
in C2000Ware (C2000Ware for C2000 MCUs ) and the TMS320F2837xD Dual-Core Real-Time Microcontrollers
Technical Reference Manual .
SDRAM configurations supported are:
• One-bank, two-bank, and four-bank SDRAM devices
• Devices with 8-, 9-, 10-, and 11-column addresses
• CAS latency of two or three clock cycles
• 16-bit/32-bit data bus width
• 3.3-V LVCMOS interface
Additionally, the EMIF supports placing the SDRAM in self-refresh and power-down modes. Self-refresh mode
allows the SDRAM to be put in a low-power state while still retaining memory contents because the SDRAM will
continue to refresh itself even without clocks from the microcontroller. Power-down mode achieves even lower
power, except the microcontroller must periodically wake up and issue refreshes if data retention is required. The
EMIF module does not support mobile SDRAM devices.
On this device, the EMIF does not support burst access for SDRAM configurations. This means every access to
an external SDRAM device will have CAS latency.

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6.9.11.3 EMIF Electrical Data and Timing

6.9.11.3.1 Asynchronous RAM

Section 6.9.11.3.1.1 shows the EMIF asynchronous memory timing requirements. Section 6.9.11.3.1.2 shows
the EMIF asynchronous memory switching characteristics. Figure 6-25 through Figure 6-28 show the EMIF
asynchronous memory timing diagrams.
6.9.11.3.1.1 EMIF Asynchronous Memory Timing Requirements

NO.(1) MIN MAX UNIT

Reads and Writes
E EMIF clock period tc(SYSCLK) ns
Pulse duration, EMxWAIT assertion and
2 tw(EM_WAIT) 2E ns
deassertion
Reads
12 tsu(EMDV-EMOEH) Setup time, EMxD[y:0] valid before EMxOE high 15 ns
13 th(EMOEH-EMDIV) Hold time, EMxD[y:0] valid after EMxOE high 0 ns
Setup Time, EMxWAIT asserted before end of
14 tsu(EMOEL-EMWAIT) 4E+20 ns
Strobe Phase(2)
Writes
Setup Time, EMxWAIT asserted before end of
28 tsu(EMWEL-EMWAIT) 4E+20 ns
Strobe Phase(2)

(1) E = EMxCLK period in ns.

(2) Setup before end of STROBE phase (if no extended wait states are inserted) by which EMxWAIT must be asserted to add extended
wait states. Figure 6-26 and Figure 6-28 describe EMIF transactions that include extended wait states inserted during the STROBE
phase. However, cycles inserted as part of this extended wait period should not be counted; the 4E requirement is to the start of where
the HOLD phase would begin if there were no extended wait cycles.

6.9.11.3.1.2 EMIF Asynchronous Memory Switching Characteristics

NO.(1)
(2) (3) PARAMETER MIN MAX UNIT

Reads and Writes

1 td(TURNAROUND) Turn around time (TA)*E–3 (TA)*E+2 ns
Reads
EMIF read cycle time (EW = 0) (RS+RST+RH)*E–3 (RS+RST+RH)*E+2 ns
3 tc(EMRCYCLE) (RS+RST+RH+ (RS+RST+RH+
EMIF read cycle time (EW = 1)(4) ns
(MEWC*16))*E–3 (MEWC*16))*E+2
Output setup time, EMxCS[y:2] low
(RS)*E–3 (RS)*E+2 ns
to EMxOE low (SS = 0)
4 tsu(EMCEL-EMOEL)
Output setup time, EMxCS[y:2] low
–3 2 ns
to EMxOE low (SS = 1)
Output hold time, EMxOE high to
(RH)*E–3 (RH)*E ns
EMxCS[y:2] high (SS = 0)
5 th(EMOEH-EMCEH)
Output hold time, EMxOE high to
–3 0 ns
EMxCS[y:2] high (SS = 1)
Output setup time, EMxBA[y:0]
6 tsu(EMBAV-EMOEL) (RS)*E–3 (RS)*E+2 ns
valid to EMxOE low
Output hold time, EMxOE high to
7 th(EMOEH-EMBAIV) (RH)*E–3 (RH)*E ns
EMxBA[y:0] invalid
Output setup time, EMxA[y:0] valid
8 tsu(EMAV-EMOEL) (RS)*E–3 (RS)*E+2 ns
to EMxOE low
Output hold time, EMxOE high to
9 th(EMOEH-EMAIV) (RH)*E–3 (RH)*E ns
EMxA[y:0] invalid

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6.9.11.3.1.2 EMIF Asynchronous Memory Switching Characteristics (continued)

NO.(1)
(2) (3) PARAMETER MIN MAX UNIT

EMxOE active low width (EW = 0) (RST)E–1 (RST)E+1 ns

10 tw(EMOEL) EMxOE active low width (EW = 1)
(4) (RST+(MEWC*16))*E–1 (RST+(MEWC*16))*E+1 ns

Delay time from EMxWAIT

11 td(EMWAITH-EMOEH) 4E+10 5E+15 ns
deasserted to EMxOE high
Output setup time, EMxDQM[y:0]
29 tsu(EMDQMV-EMOEL) (RS)*E–3 (RS)*E+2 ns
valid to EMxOE low
Output hold time, EMxOE high to
30 th(EMOEH-EMDQMIV) (RH)*E–3 (RH)*E ns
EMxDQM[y:0] invalid
Writes
EMIF write cycle time (EW = 0) (WS+WST+WH)*E–3 (WS+WST+WH)*E+1 ns
15 tc(EMWCYCLE) (WS+WST+WH+ (WS+WST+WH+
EMIF write cycle time (EW = 1)(4) ns
(MEWC*16))*E–3 (MEWC*16))*E+1
Output setup time, EMxCS[y:2] low
(WS)*E–3 (WS)*E+1 ns
to EMxWE low (SS = 0)
16 tsu(EMCEL-EMWEL)
Output setup time, EMxCS[y:2] low
–3 1 ns
to EMxWE low (SS = 1)
Output hold time, EMxWE high to
(WH)*E–3 (WH)*E ns
EMxCS[y:2] high (SS = 0)
17 th(EMWEH-EMCEH)
Output hold time, EMxWE high to
–3 0 ns
EMxCS[y:2] high (SS = 1)
Output setup time, EMxDQM[y:0]
18 tsu(EMDQMV-EMWEL) (WS)*E–3 (WS)*E+1 ns
valid to EMxWE low
Output hold time, EMxWE high to
19 th(EMWEH-EMDQMIV) (WH)*E–3 (WH)*E ns
EMxDQM[y:0] invalid
Output setup time, EMxBA[y:0]
20 tsu(EMBAV-EMWEL) (WS)*E–3 (WS)*E+1 ns
valid to EMxWE low
Output hold time, EMxWE high to
21 th(EMWEH-EMBAIV) (WH)*E–3 (WH)*E ns
EMxBA[y:0] invalid
Output setup time, EMxA[y:0] valid
22 tsu(EMAV-EMWEL) (WS)*E–3 (WS)*E+1 ns
to EMxWE low
Output hold time, EMxWE high to
23 th(EMWEH-EMAIV) (WH)*E–3 (WH)*E ns
EMxA[y:0] invalid
EMxWE active low width
(WST)*E–1 (WST)*E+1 ns
(EW = 0)
24 tw(EMWEL)
EMxWE active low width
(WST+(MEWC*16))*E–1 (WST+(MEWC*16))*E+1 ns
(EW = 1)(4)
Delay time from EMxWAIT
25 td(EMWAITH-EMWEH) 4E+10 5E+15 ns
deasserted to EMxWE high
Output setup time, EMxD[y:0] valid
26 tsu(EMDV-EMWEL) (WS)*E–3 (WS)*E+1 ns
to EMxWE low
Output hold time, EMxWE high to
27 th(EMWEH-EMDIV) (WH)*E–3 (WH)*E ns
EMxD[y:0] invalid

(1) TA = Turn around, RS = Read setup, RST = Read strobe, RH = Read hold, WS = Write setup, WST = Write strobe, WH = Write
hold, MEWC = Maximum external wait cycles. These parameters are programmed through the Asynchronous Bank and Asynchronous
Wait Cycle Configuration Registers. These support the following ranges of values: TA[4–1], RS[16–1], RST[64–4], RH[8–1], WS[16–
1], WST[64–1], WH[8–1], and MEWC[1–256]. See the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference
Manual for more information.
(2) E = EMxCLK period in ns.
(3) EWC = external wait cycles determined by EMxWAIT input signal. EWC supports the following range of values. EWC[256–1]. The
maximum wait time before time-out is specified by bit field MEWC in the Asynchronous Wait Cycle Configuration Register. See the
TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual for more information.
(4) Maximum wait time-out condition.

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3
1

EMxCS[y:2]

EMxBA[y:0]

EMxA[y:0]

EMxDQM[y:0]

4 5
8 9
6 7
29 30
10
EMxOE
13
12

EMxD[y:0]

EMxWE

Figure 6-25. Asynchronous Memory Read Timing

SETUP STROBE Extended Due to EMxWAIT STROBE HOLD

EMxCS[y:2]

EMxBA[y:0]

EMxA[y:0]

EMxD[y:0]

14
11
EMxOE

2
2
EMxWAIT Asserted Deasserted

Figure 6-26. EMxWAIT Read Timing Requirements

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15
1

EMxCS[y:2]

EMxBA[y:0]

EMxA[y:0]

EMxDQM[y:0]

16 17
18 19
20 21
24
22 23

EMxWE
27
26

EMxD[y:0]

EMxOE

Figure 6-27. Asynchronous Memory Write Timing

SETUP STROBE Extended Due to EMxWAIT STROBE HOLD

EMxCS[y:2]

EMxBA[y:0]

EMxA[y:0]

EMxD[y:0]

28
25
EMxWE

2
2
EMxWAIT Asserted Deasserted

Figure 6-28. EMxWAIT Write Timing Requirements

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6.9.11.3.2 Synchronous RAM

Section 6.9.11.3.2.1 shows the EMIF synchronous memory timing requirements. Section 6.9.11.3.2.2 shows
the EMIF synchronous memory switching characteristics. Figure 6-29 and Figure 6-30 show the synchronous
memory timing diagrams.
6.9.11.3.2.1 EMIF Synchronous Memory Timing Requirements

NO. MIN MAX UNIT

19 tsu(EMIFDV-EM_CLKH) Input setup time, read data valid on EMxD[y:0] before EMxCLK rising 2 ns
20 th(CLKH-DIV) Input hold time, read data valid on EMxD[y:0] after EMxCLK rising 1.5 ns

6.9.11.3.2.2 EMIF Synchronous Memory Switching Characteristics

NO. PARAMETER MIN MAX UNIT

1 tc(CLK) Cycle time, EMIF clock EMxCLK 10 ns
2 tw(CLK) Pulse width, EMIF clock EMxCLK high or low 3 ns
3 td(CLKH-CSV) Delay time, EMxCLK rising to EMxCS[y:2] valid 8 ns
4 toh(CLKH-CSIV) Output hold time, EMxCLK rising to EMxCS[y:2] invalid 1 ns
5 td(CLKH-DQMV) Delay time, EMxCLK rising to EMxDQM[y:0] valid 8 ns
6 toh(CLKH-DQMIV) Output hold time, EMxCLK rising to EMxDQM[y:0] invalid 1 ns
7 td(CLKH-AV) Delay time, EMxCLK rising to EMxA[y:0] and EMxBA[y:0] valid 8 ns
8 toh(CLKH-AIV) Output hold time, EMxCLK rising to EMxA[y:0] and EMxBA[y:0] invalid 1 ns
9 td(CLKH-DV) Delay time, EMxCLK rising to EMxD[y:0] valid 8 ns
10 toh(CLKH-DIV) Output hold time, EMxCLK rising to EMxD[y:0] invalid 1 ns
11 td(CLKH-RASV) Delay time, EMxCLK rising to EMxRAS valid 8 ns
12 toh(CLKH-RASIV) Output hold time, EMxCLK rising to EMxRAS invalid 1 ns
13 td(CLKH-CASV) Delay time, EMxCLK rising to EMxCAS valid 8 ns
14 toh(CLKH-CASIV) Output hold time, EMxCLK rising to EMxCAS invalid 1 ns
15 td(CLKH-WEV) Delay time, EMxCLK rising to EMxWE valid 8 ns
16 toh(CLKH-WEIV) Output hold time, EMxCLK rising to EMxWE invalid 1 ns
17 td(CLKH-DHZ) Delay time, EMxCLK rising to EMxD[y:0] tri-stated 8 ns
18 toh(CLKH-DLZ) Output hold time, EMxCLK rising to EMxD[y:0] driving 1 ns

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BASIC SDRAM 1
READ OPERATION 2 2
EMxCLK

3 4

EMxCS[y:2]

5 6
EMxDQM[y:0]

7 8
EMxBA[y:0]

7 8
EMxA[y:0]

19
2 EM_CLK Delay
17 20 18

EMxD[y:0]

11 12
EMxRAS
13 14

EMxCAS

EMxWE

Figure 6-29. Basic SDRAM Read Operation

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BASIC SDRAM 1
WRITE OPERATION 2 2

EMxCLK
3 4
EMxCS[y:2]

5 6
EMxDQM[y:0]

7 8
EMxBA[y:0]

7 8
EMxA[y:0]

9
10

EMxD[y:0]
11 12
EMxRAS
13

EMxCAS
15 16

EMxWE

Figure 6-30. Basic SDRAM Write Operation

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6.10 Analog Peripherals

The analog subsystem module is described in this section.
The analog modules on this device include the ADC, temperature sensor, buffered DAC, and CMPSS.
The analog subsystem has the following features:
• Flexible voltage references
– The ADCs are referenced to VREFHIx and VREFLOx pins.
• VREFHIx pin voltage must be driven in externally.
• The buffered DACs are referenced to VREFHIx and VSSA.
– Alternately, these DACs can be referenced to the VDAC pin and VSSA.
• The comparator DACs are referenced to VDDA and VSSA.
– Alternately, these DACs can be referenced to the VDAC pin and VSSA.
• Flexible pin usage
– Buffered DAC and comparator subsystem functions multiplexed with ADC inputs
• Internal connection to VREFLO on all ADCs for offset self-calibration
Figure 6-31 shows the Analog Subsystem Block Diagram for the 337-ball ZWT package. Figure 6-32 shows
the Analog Subsystem Block Diagram for the 176-pin PTP package. Figure 6-33 shows the Analog Subsystem
Block Diagram for the 100-pin PZP package.

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VREFHIA

DACOUTA
VREFHIA VDAC Comparator Subsystem 1
DACOUTA/ADCINA0 0 REFHI CMPIN1P
DACOUTB/ADCINA1 1 DACREFSEL
Digital CTRIP1H
CMPIN1P/ADCINA2 2 VDDA or VDAC Filter CTRIPOUT1H
CMPIN1N/ADCINA3 3
CMPIN2P/ADCINA4 4 12-bit DAC12
CMPIN2N/ADCINA5 5 Buffered
6
ADC-A DAC12
DAC Digital CTRIP1L
7 16-bits
CMPIN1N Filter CTRIPOUT1L
VREFLOA 8 or VSSA
VREFLOA 9 12-bits
10 (selectable) Comparator Subsystem 2
CMPIN2P

DACOUTB
11 VREFHIA VDAC
Digital CTRIP2H
12
VDDA or VDAC Filter CTRIPOUT2H
TEMP SENSOR 13 DACREFSEL
CMPIN4P/ADCIN14 14
DAC12
CMPIN4N/ADCIN15 15 REFLO
12-bit
DAC12 Digital CTRIP2L
Buffered
VREFLOA Filter
DAC CMPIN2N CTRIPOUT2L
VREFHIB
VSSA
Comparator Subsystem 3
VDAC/ADCINB0 0 REFHI CMPIN3P
DACOUTC/ADCINB1 1 Digital CTRIP3H

DACOUTC
CMPIN3P/ADCINB2 2 VREFHIB VDAC VDDA or VDAC Filter CTRIPOUT3H
CMPIN3N/ADCINB3 3
ADCINB4 4 DACREFSEL DAC12
ADCINB5 5
6
ADC-B DAC12 Digital CTRIP3L
7 16-bits 12-bit
CMPIN3N Filter CTRIPOUT3L
8 or Buffered
VREFLOB
VREFLOB 9 12-bits DAC
10 (selectable) Comparator Subsystem 4
11 VSSA CMPIN4P
12 Digital CTRIP4H
13 VDDA or VDAC Filter CTRIPOUT4H
14
DAC12
15 REFLO
DAC12 Digital
VREFLOB CTRIP4L
CMPIN4N Filter CTRIPOUT4L
VREFHIC
Comparator Subsystem 5
0 REFHI CMPIN5P
1 Digital CTRIP5H
CMPIN6P/ADCINC2 2 VDDA or VDAC Filter CTRIPOUT5H
CMPIN6N/ADCINC3 3
CMPIN5P/ADCINC4 4 DAC12
CMPIN5N/ADCINC5 5
6
ADC-C DAC12 Digital CTRIP5L
7 16-bits
CMPIN5N Filter CTRIPOUT5L
VREFLOC 8 or
VREFLOC 9 12-bits
10 (selectable) Comparator Subsystem 6
11 CMPIN6P
Digital CTRIP6H
12
VDDA or VDAC Filter CTRIPOUT6H
13
14
DAC12
15 REFLO
DAC12 Digital
VREFLOC CTRIP6L
CMPIN6N Filter CTRIPOUT6L
VREFHID
Comparator Subsystem 7
CMPIN7P/ADCIND0 0 REFHI CMPIN7P
CMPIN7N/ADCIND1 1 Digital CTRIP7H
CMPIN8P/ADCIND2 2 VDDA or VDAC Filter CTRIPOUT7H
CMPIN8N/ADCIND3 3
ADCIND4 4 DAC12
ADCIND5 5 ADC-D
6 DAC12 Digital CTRIP7L
7 16-bits
or CMPIN7N Filter CTRIPOUT7L
VREFLOD 8
VREFLOD 9 12-bits
10 (selectable) Comparator Subsystem 8
11 CMPIN8P
12 Digital CTRIP8H
13 VDDA or VDAC Filter CTRIPOUT8H
14
15 DAC12
REFLO
DAC12 Digital CTRIP8L
VREFLOD
CMPIN8N Filter CTRIPOUT8L

Figure 6-31. Analog Subsystem Block Diagram (337-Ball ZWT)

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VREFHIA

DACOUTB
11 VREFHIA VDAC CMPIN2P
Digital CTRIP2H
12
VDDA or VDAC Filter CTRIPOUT2H
TEMP SENSOR 13 DACREFSEL
CMPIN4P/ADCIN14 14
DAC12
CMPIN4N/ADCIN15 15 REFLO 12-bit
Buffered DAC12 Digital CTRIP2L
VREFLOA DAC Filter
CMPIN2N CTRIPOUT2L
VREFHIB
VSSA
Comparator Subsystem 3
VDAC/ADCINB0 0 REFHI CMPIN3P
DACOUTC/ADCINB1 1 CTRIP3H

DACOUTC
VREFHIB VDAC Digital
CMPIN3P/ADCINB2 2 VDDA or VDAC Filter CTRIPOUT3H
CMPIN3N/ADCINB3 3
DACREFSEL
4 DAC12
5
6
ADC-B DAC12
12-bit Digital CTRIP3L
7 16-bits
Buffered CMPIN3N Filter CTRIPOUT3L
8 or
VREFLOB DAC
9 12-bits
VREFLOB
10 (selectable) VSSA Comparator Subsystem 4
11 CMPIN4P
12 Digital CTRIP4H
13 VDDA or VDAC Filter CTRIPOUT4H
14
DAC12
15 REFLO
DAC12 Digital
VREFLOB CTRIP4L
CMPIN4N Filter CTRIPOUT4L
VREFHIC
Comparator Subsystem 5
0 REFHI CMPIN5P
1 Digital CTRIP5H
CMPIN6P/ADCINC2 2 VDDA or VDAC Filter CTRIPOUT5H
CMPIN6N/ADCINC3 3
CMPIN5P/ADCINC4 4 DAC12
5
6
ADC-C DAC12 Digital CTRIP5L
7 16-bits
Filter CTRIPOUT5L
VREFLOC 8 or
VREFLOC 9 12-bits
10 (selectable) Comparator Subsystem 6
11 CMPIN6P
Digital CTRIP6H
12
VDDA or VDAC Filter CTRIPOUT6H
13
14
DAC12
15 REFLO
DAC12 Digital
VREFLOC CTRIP6L
CMPIN6N Filter CTRIPOUT6L
VREFHID
Comparator Subsystem 7
CMPIN7P/ADCIND0 0 REFHI CMPIN7P
CMPIN7N/ADCIND1 1 Digital CTRIP7H
CMPIN8P/ADCIND2 2 VDDA or VDAC Filter CTRIPOUT7H
CMPIN8N/ADCIND3 3
ADCIND4 4 DAC12
5 ADC-D
6 DAC12 Digital CTRIP7L
7 16-bits
or CMPIN7N Filter CTRIPOUT7L
VREFLOD 8
VREFLOD 9 12-bits
10 (selectable) Comparator Subsystem 8
11 CMPIN8P
12 Digital CTRIP8H
13 VDDA or VDAC Filter CTRIPOUT8H
14
15 DAC12
REFLO
DAC12 Digital CTRIP8L
VREFLOD
CMPIN8N Filter CTRIPOUT8L

Figure 6-32. Analog Subsystem Block Diagram (176-Pin PTP)

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VREFHIA
VREFHIA VDAC

DACOUTA
Comparator Subsystem 1
DACOUTA/ADCINA0 REFHI CMPIN1P
DACOUTB/ADCINA1 0 Digital CTRIP1H
1 DACREFSEL
CMPIN1P/ADCINA2 VDDA or VDAC Filter CTRIPOUT1H
CMPIN1N/ADCINA3 2
3
CMPIN2P/ADCINA4 12-bit DAC12
4
CMPIN2N/ADCINA5 5 Buffered
6 DAC DAC12 Digital CTRIP1L
ADC-A
7 CMPIN1N Filter CTRIPOUT1L
12-bits
VREFLOA 8 VSSA
9 or 16-bits
VREFLOA
10 Comparator Subsystem 2
11 VREFHIA VDAC CMPIN2P

DACOUTB
12 Digital CTRIP2H
13 VDDA or VDAC Filter
TEMP SENSOR DACREFSEL CTRIPOUT2H
14
CMPIN4P/ADCIN14 15
DAC12
CMPIN4N/ADCIN15 REFLO 12-bit
Buffered DAC12 CTRIP2L
Digital
VREFLOA DAC
CMPIN2N Filter CTRIPOUT2L
VREFHIB VSSA
Comparator Subsystem 3
VDAC/ADCINB0 REFHI CMPIN3P
DACOUTC/ADCINB1 0 VREFHIB VDAC Digital CTRIP3H

DACOUTC
CMPIN3P/ADCINB2 1 VDDA or VDAC Filter CTRIPOUT3H
CMPIN3N/ADCINB3 2
3 DACREFSEL
ADCINB4 DAC12
4
ADCINB5 5
6 12-bit DAC12 CTRIP3L
Digital
ADC-B Buffered
7 CMPIN3N Filter CTRIPOUT3L
12-bits DAC
VREFLOB 8
9 or 16-bits
VREFLOB
10 VSSA Comparator Subsystem 4
11 CMPIN4P
12 Digital CTRIP4H
13 VDDA or VDAC Filter
14 CTRIPOUT4H
15
DAC12
REFLO
DAC12 Digital CTRIP4L
VREFLOB
CMPIN4N Filter CTRIPOUT4L

Figure 6-33. Analog Subsystem Block Diagram (100-Pin PZP)

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6.10.1 Analog-to-Digital Converter (ADC)

The ADCs on this device are successive approximation (SAR) style ADCs with selectable resolution of either
16 bits or 12 bits. There are multiple ADC modules which allow simultaneous sampling. The ADC wrapper is
start-of-conversion (SOC) based [see the SOC Principle of Operation section of the TMS320F2837xD Dual-Core
Real-Time Microcontrollers Technical Reference Manual .
Each ADC has the following features:
• Selectable resolution of 16 bits or 12 bits
• Ratiometric external reference set by VREFHI and VREFLO
• Differential signal conversions (16-bit mode only)
• Single-ended signal conversions (12-bit mode only)
• Input multiplexer with up to 16 channels (single-ended) or 8 channels (differential)
• 16 configurable SOCs
• 16 individually addressable result registers
• Multiple trigger sources
– Software immediate start
– All ePWMs
– GPIO XINT2
– CPU timers
– ADCINT1 or 2
• Four flexible PIE interrupts
• Burst mode
• Four post-processing blocks, each with:
– Saturating offset calibration
– Error from setpoint calculation
– High, low, and zero-crossing compare, with interrupt and ePWM trip capability
– Trigger-to-sample delay capture

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Figure 6-34 shows the ADC module block diagram.

Analog to Digital Core Analog to Digital Wrapper Logic

SIGNALMODE
SIGNALMODE

Input Circuit RESOLUTION RESOLUTION

TRIGSEL
SOCx (0-15)

Triggers
CHSEL [15:0]
SOC
[15:0]
ADCSOC Arbitration ACQPS
ADCIN0 0
ADCIN1 1 & Control [15:0]
CHSEL
ADCIN2 2
ADCIN3 3

SOCxSTART[15:0]

...
...
ADCIN4 4
ADCIN5

EOCx[15:0]
5
ADCIN6 6
xV1IN+
ADCCOUNTER TRIGGER[15:0]
ADCIN7 7
u
DOUT1
ADCIN8 8
xV
ADCIN9 9
2 IN-

ADCIN10 10
ADCIN11 11 SOC Delay Trigger
ADCIN12 12
S/H Circuit Converter Timestamp Timestamp
ADCIN13 13
ADCIN14 14
ADCIN15 15 RESULT + -
S ADCPPBxOFFCAL

ADCRESULT
0–15 Regs
saturate

ADCPPBxOFFREF
+ -
S ADCPPBxRESULT

VREFHI Event
ADCEVT
CONFIG ADCEVTINT
Logic
VREFLO
Reference Voltage Levels Post Processing Block (1-4)

Interrupt Block (1-4)

ADCINT1-4

Figure 6-34. ADC Module Block Diagram

6.10.1.1 ADC Configurability

Some ADC configurations are individually controlled by the SOCs, while others are controlled by each ADC
module. Table 6-11 summarizes the basic ADC options and their level of configurability.
Table 6-11. ADC Options and Configuration Levels
OPTIONS CONFIGURABILITY
Clock By the module(1)
Resolution By the module(1)
Signal mode By the module
Reference voltage source Not configurable (external reference only)
Trigger source By the SOC(1)
Converted channel By the SOC
Acquisition window duration By the SOC(1)
EOC location By the module
Burst mode By the module(1)

(1) Writing these values differently to different ADC modules could cause the ADCs to operate
asynchronously. For guidance on when the ADCs are operating synchronously or asynchronously,
see the Ensuring Synchronous Operation section of the Analog-to-Digital Converter (ADC) chapter
in the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual .

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6.10.1.1.1 Signal Mode

The ADC supports two signal modes: single-ended and differential. In single-ended mode, the input voltage to
the converter is sampled through a single pin (ADCINx), referenced to VREFLO. In differential signaling mode,
the input voltage to the converter is sampled through a pair of input pins, one of which is the positive input
(ADCINxP) and the other is the negative input (ADCINxN). The actual input voltage is the difference between
the two (ADCINxP – ADCINxN). Figure 6-35 shows the differential signaling mode. Figure 6-36 shows the
single-ended signaling mode.

Pin Voltages
VREFHI
VREFHI

ADCINxP ADCINxP

VREFHI/2 ADC
ADCINxN
ADCINxN
VREFLO
VREFLO
(VSSA)

Input Common Mode

VREFHI

Vin Common Mode VREFHI/2 ± 50mV

VREFLO
(VSSA)

Effective Input Voltage

+VREFHI

ADC Vin

-VREFHI

Digital Output
2n - 1

ADC Vin

Figure 6-35. Differential Signaling Mode

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Pin Voltage
VREFHI
VREFHI

ADCINx ADCINx

VREFHI/2 ADC

VREFLO
VREFLO
(VSSA)

Digital Output
2n - 1

ADC Vin

Figure 6-36. Single-ended Signaling Mode

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6.10.1.2 ADC Electrical Data and Timing

Section 6.10.1.2.1 shows the ADC operating conditions for 16-bit differential mode. Section 6.10.1.2.2 shows
the ADC characteristics for 16-bit differential mode. Section 6.10.1.2.3 shows the ADC operating conditions
for 12-bit single-ended mode. Section 6.10.1.2.4 shows the ADC characteristics for 12-bit single-ended mode.
Section 6.10.1.2.5 shows the ADCEXTSOC timing requirements.
6.10.1.2.1 ADC Operating Conditions (16-Bit Differential Mode)
over recommended operating conditions (unless otherwise noted)
MIN TYP MAX UNIT
ADCCLK (derived from PERx.SYSCLK) 5 50 MHz
Sample window duration (set by ACQPS and PERx.SYSCLK)(1) 320 ns
VREFHI 2.4 2.5 or 3.0 VDDA V
VREFLO VSSA 0 VSSA V
VREFHI – VREFLO 2.4 VDDA V
ADC input conversion range VREFLO VREFHI V
ADC input signal common mode voltage(2) (3) VREFCM – 50 VREFCM VREFCM + 50 mV

(1) The sample window must also be at least as long as 1 ADCCLK cycle for correct ADC operation.
(2) VREFCM = (VREFHI + VREFLO)/2
(3) The VREFCM requirements will not be met if the negative ADC input pin is connected to VSSA or VREFLO.

Note
The ADC inputs should be kept below VDDA + 0.3 V during operation. If an ADC input exceeds this
level, the VREF internal to the device may be disturbed, which can impact results for other ADC or
DAC inputs using the same VREF.

Note
The VREFHI pin must be kept below VDDA + 0.3 V to ensure proper functional operation. If the VREFHI
pin exceeds this level, a blocking circuit may activate, and the internal value of VREFHI may float to 0 V
internally, giving improper ADC conversion or DAC output.

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6.10.1.2.2 ADC Characteristics (16-Bit Differential Mode)

over recommended operating conditions (unless otherwise noted)(6)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ADC conversion cycles(1) 29.6 31 ADCCLKs
Power-up time (after setting
500 µs
ADCPWDNZ to first conversion)
Gain error –64 ±9 64 LSBs
Offset error(2) –16 ±9 16 LSBs
Channel-to-channel gain error ±6 LSBs
Channel-to-channel offset error ±3 LSBs
ADC-to-ADC gain error Identical VREFHI and VREFLO for all ADCs ±6 LSBs
ADC-to-ADC offset error Identical VREFHI and VREFLO for all ADCs ±3 LSBs
DNL(3) > –1 ±0.5 1 LSBs
INL –3 ±1.5 3 LSBs
SNR(4) (11) VREFHI = 2.5 V, fin = 10 kHz 90.2 dB
THD(4) (11) VREFHI = 2.5 V, fin = 10 kHz –105 dB
SFDR(4) (11) VREFHI = 2.5 V, fin = 10 kHz 106 dB
SINAD(4) (11) VREFHI = 2.5 V, fin = 10 kHz 90.0 dB
VREFHI = 2.5 V, fin = 10 kHz,
14.65
single ADC(7)
VREFHI = 2.5 V, fin = 10 kHz,
ENOB(4) (11) 14.65 bits
synchronous ADCs(8)
VREFHI = 2.5 V, fin = 10 kHz, Not
asynchronous ADCs(9) supported
VDDA = 3.3-V DC + 200 mV
PSRR 77 dB
DC up to Sine at 1 kHz
VDDA = 3.3-V DC + 200 mV
PSRR 74 dB
Sine at 800 kHz
CMRR DC to 1 MHz 60 dB
VREFHI input current 190 µA
VREFHI = 2.5 V, synchronous ADCs(8) –2 2
ADC-to-ADC isolation(11) (5) (10) Not LSBs
VREFHI = 2.5 V, asynchronous ADCs(9)
supported

(1) See Section 6.10.1.2.7.

(2) Difference from conversion result 32768 when ADCINp = ADCINn = VREFCM.
(3) No missing codes.
(4) AC parameters will be impacted by clock source accuracy and jitter, this should be taken into account when selecting the clock source
for the system. The clock source used for these parameters was a high-accuracy external clock fed through the PLL. The on-chip
Internal Oscillator has higher jitter than an external crystal and these parameters will degrade if it is used as a clock source.
(5) Maximum DC code deviation due to operation of multiple ADCs simultaneously.
(6) Typical values are measured with VREFHI = 2.5 V and VREFLO = 0 V. Minimum and Maximum values are tested or characterized with
VREFHI = 2.5 V and VREFLO = 0 V.
(7) One ADC operating while all other ADCs are idle.
(8) All ADCs operating with identical ADCCLK, S+H durations, triggers, and resolution.
(9) Any ADCs operating with heterogeneous ADCCLK, S+H durations, triggers, or resolution.
(10) Value based on characterization.
(11) I/O activity is minimized on pins adjacent to ADC input and VREFHI pins as part of best practices to reduce capacitive coupling and
crosstalk.

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6.10.1.2.3 ADC Operating Conditions (12-Bit Single-Ended Mode)

over recommended operating conditions (unless otherwise noted)
MIN TYP MAX UNIT
ADCCLK (derived from PERx.SYSCLK) 5 50 MHz
Sample window duration (set by ACQPS and PERx.SYSCLK)(1) 75 ns
VREFHI 2.4 2.5 or 3.0 VDDA V
VREFLO VSSA 0 VSSA V
VREFHI – VREFLO 2.4 VDDA V
ADC input conversion range VREFLO VREFHI V

(1) The sample window must also be at least as long as 1 ADCCLK cycle for correct ADC operation.

6.10.1.2.4 ADC Characteristics (12-Bit Single-Ended Mode)

over recommended operating conditions (unless otherwise noted)(5)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ADC conversion cycles(1) 10.1 11 ADCCLKs
Power-up time 500 µs
Gain error –5 ±3 5 LSBs
Offset error –4 ±2 4 LSBs
Channel-to-channel gain error ±4 LSBs
Channel-to-channel offset error ±2 LSBs
ADC-to-ADC gain error Identical VREFHI and VREFLO for all ADCs ±4 LSBs
ADC-to-ADC offset error Identical VREFHI and VREFLO for all ADCs ±2 LSBs
DNL(2) > –1 ±0.5 1 LSBs
INL –2 ±1.0 2 LSBs
SNR(3) (10) VREFHI = 2.5 V, fin = 100 kHz 69.1 dB
THD(3) (10) VREFHI = 2.5 V, fin = 100 kHz –88 dB
SFDR(3) (10) VREFHI = 2.5 V, fin = 100 kHz 89 dB
SINAD(3) (10) VREFHI = 2.5 V, fin = 100 kHz 69.0 dB

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6.10.1.2.4 ADC Characteristics (12-Bit Single-Ended Mode) (continued)

over recommended operating conditions (unless otherwise noted)(5)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREFHI = 2.5 V, fin = 100 kHz,
11.2
single ADC(6), all packages
VREFHI = 2.5 V, fin = 100 kHz,
11.2
synchronous ADCs(7), all packages
VREFHI = 2.5 V, fin = 100 kHz,
Not
asynchronous ADCs(8),
supported
ENOB(3) (10) 100-pin PZP package bits
VREFHI = 2.5 V, fin = 100 kHz,
asynchronous ADCs(8), 9.7
176-pin PTP package
VREFHI = 2.5 V, fin = 100 kHz,
asynchronous ADCs(8), 10.9
337-ball ZWT package
VDDA = 3.3-V DC + 200 mV
PSRR 60 dB
DC up to Sine at 1 kHz
VDDA = 3.3-V DC + 200 mV
PSRR 57 dB
Sine at 800 kHz
VREFHI = 2.5 V, synchronous ADCs(7), all
–1 1
packages
VREFHI = 2.5 V, asynchronous ADCs(8), Not
100-pin PZP package supported
ADC-to-ADC isolation(10) (4) (9) LSBs
VREFHI = 2.5 V, asynchronous ADCs(8),
–9 9
176-pin PTP package
VREFHI = 2.5 V, asynchronous ADCs(8),
–2 2
337-ball ZWT package
VREFHI input current 130 µA

(1) See Section 6.10.1.2.7.

(2) No missing codes.
(3) AC parameters will be impacted by clock source accuracy and jitter, this should be taken into account when selecting the clock source
for the system. The clock source used for these parameters was a high-accuracy external clock fed through the PLL. The on-chip
Internal Oscillator has higher jitter than an external crystal and these parameters will degrade if it is used as a clock source.
(4) Maximum DC code deviation due to operation of multiple ADCs simultaneously.
(5) Typical values are measured with VREFHI = 2.5 V and VREFLO = 0 V. Minimum and Maximum values are tested or characterized with
VREFHI = 2.5 V and VREFLO = 0 V.
(6) One ADC operating while all other ADCs are idle.
(7) All ADCs operating with identical ADCCLK, S+H durations, triggers, and resolution.
(8) Any ADCs operating with heterogeneous ADCCLK, S+H durations, triggers, or resolution.
(9) Value based on characterization.
(10) I/O activity is minimized on pins adjacent to ADC input and VREFHI pins as part of best practices to reduce capacitive coupling and
crosstalk.

6.10.1.2.5 ADCEXTSOC Timing Requirements

MIN(1) MAX UNIT

Synchronous 2tc(SYSCLK) cycles
tw(INT) Pulse duration, INT input low/high
With qualifier tw(IQSW) + tw(SP) + 1tc(SYSCLK) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.

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6.10.1.2.6 ADC Input Models

Note
ADC channels ADCINA0, ADCINA1, and ADCINB1 have a 50-kΩ pulldown resistor to VSSA.

For differential operation, the ADC input characteristics are given by Section 6.10.1.2.6.1 and Figure 6-37.
6.10.1.2.6.1 Differential Input Model Parameters

DESCRIPTION VALUE (16-BIT MODE)

Cp Parasitic input capacitance See Table 6-12
Ron Sampling switch resistance 700 Ω
Ch Sampling capacitor 16.5 pF
Rs Nominal source impedance 50 Ω

ADC
Rs ADCINxP
Cp Switch Ron
AC VSSA Ch
Cp

ADCINxN Switch Ron

Figure 6-37. Differential Input Model

For single-ended operation, the ADC input characteristics are given by Section 6.10.1.2.6.2 and Figure 6-38.
6.10.1.2.6.2 Single-Ended Input Model Parameters

DESCRIPTION VALUE (12-BIT MODE)

Cp Parasitic input capacitance See Table 6-12
Ron Sampling switch resistance 425 Ω
Ch Sampling capacitor 14.5 pF
Rs Nominal source impedance 50 Ω

ADC
ADCINx
Rs
Switch Ron
AC Cp Ch

VREFLO

Figure 6-38. Single-Ended Input Model

Table 6-12 shows the parasitic capacitance on each channel. Also, enabling a comparator adds approximately
1.4 pF of capacitance on positive comparator inputs and 2.5 pF of capacitance on negative comparator inputs.
Table 6-12. Per-Channel Parasitic Capacitance
Cp (pF)
ADC CHANNEL
COMPARATOR DISABLED COMPARATOR ENABLED
ADCINA0 12.9 N/A
ADCINA1 10.3 N/A
ADCINA2 5.9 7.3

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Table 6-12. Per-Channel Parasitic Capacitance (continued)

Cp (pF)
ADC CHANNEL
COMPARATOR DISABLED COMPARATOR ENABLED
ADCINA3 6.3 8.8
ADCINA4 5.9 7.3
ADCINA5 6.3 8.8
ADCINB0(1) 117.0 N/A
ADCINB1 10.6 N/A
ADCINB2 5.9 7.3
ADCINB3 6.2 8.7
ADCINB4 5.2 N/A
ADCINB5 5.1 N/A
ADCINC2 5.5 6.9
ADCINC3 5.8 8.3
ADCINC4 5.0 6.4
ADCINC5 5.3 7.8
ADCIND0 5.3 6.7
ADCIND1 5.7 8.2
ADCIND2 5.3 6.7
ADCIND3 5.6 8.1
ADCIND4 4.3 N/A
ADCIND5 4.3 N/A
ADCIN14 8.6 10.0
ADCIN15 9.0 11.5

(1) The increased capacitance is due to VDAC functionality.

These input models should be used along with actual signal source impedance to determine the acquisition
window duration. See the Choosing an Acquisition Window Duration section of the TMS320F2837xD Dual-Core
Real-Time Microcontrollers Technical Reference Manual for more information. Also refer to Charge-Sharing
Driving Circuits for C2000 ADCs and ADC Input Circuit Evaluation for C2000 MCUs for more details on
evaluating ADC circuit performance.
The user should analyze the ADC input setting assuming worst-case initial conditions on Ch. This will require
assuming that Ch could start the S+H window completely charged to VREFHI or completely discharged to VREFLO.
When the ADC transitions from an odd-numbered channel to an even-numbered channel, or vice-versa, the
actual initial voltage on Ch will be close to being completely discharged to VREFLO. For even-to-even or odd-to-
odd channel transitions, the initial voltage on Ch will be close to the voltage of the previously converted channel.

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6.10.1.2.7 ADC Timing Diagrams

Section 6.10.1.2.7.1 lists the ADC timings in 12-bit mode (SYSCLK cycles). Section 6.10.1.2.7.2 lists the ADC
timings in 16-bit mode. Figure 6-39 and Figure 6-40 show the ADC conversion timings for two SOCs given the
following assumptions:
• SOC0 and SOC1 are configured to use the same trigger.
• No other SOCs are converting or pending when the trigger occurs.
• The round robin pointer is in a state that causes SOC0 to convert first.
• ADCINTSEL is configured to set an ADCINT flag upon end of conversion for SOC0 (whether this flag
propagates through to the CPU to cause an interrupt is determined by the configurations in the PIE module).
Table 6-13 lists the descriptions of the ADC timing parameters that are in Figure 6-39 and Figure 6-40.
Table 6-13. ADC Timing Parameters
PARAMETER DESCRIPTION
The duration of the S+H window.

At the end of this window, the value on the S+H capacitor becomes the voltage to be converted into a digital
value. The duration is given by (ACQPS + 1) SYSCLK cycles. ACQPS can be configured individually for each
tSH
SOC, so tSH will not necessarily be the same for different SOCs.

Note: The value on the S+H capacitor will be captured approximately 5 ns before the end of the S+H window
regardless of device clock settings.
The time from the end of the S+H window until the ADC conversion results latch in the ADCRESULTx register.
tLAT
If the ADCRESULTx register is read before this time, the previous conversion results will be returned.
The time from the end of the S+H window until the next ADC conversion S+H window can begin. The
tEOC
subsequent sample can start before the conversion results are latched.
The time from the end of the S+H window until an ADCINT flag is set (if configured).

If the INTPULSEPOS bit in the ADCCTL1 register is set, tINT will coincide with the conversion results being
latched into the result register.
tINT

If the INTPULSEPOS bit is 0, tINT will coincide with the end of the S+H window. If tINT triggers a read of the
ADC result register (directly through DMA or indirectly by triggering an ISR that reads the result), care must be
taken to ensure the read occurs after the results latch (otherwise, the previous results will be read).

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6.10.1.2.7.1 ADC Timings in 12-Bit Mode (SYSCLK Cycles)

ADCCLK
ADCCLK PRESCALE SYSCLK CYCLES
CYCLES
ADCCTL2 RATIO
tEOC tLAT (1) tINT(EARLY) tINT(LATE) tEOC
[PRESCALE] ADCCLK:SYSCLK
0 1 11 13 1 11 11.0
1 1.5 Invalid
2 2 21 23 1 21 10.5
3 2.5 26 28 1 26 10.4
4 3 31 34 1 31 10.3
5 3.5 36 39 1 36 10.3
6 4 41 44 1 41 10.3
7 4.5 46 49 1 46 10.2
8 5 51 55 1 51 10.2
9 5.5 56 60 1 56 10.2
10 6 61 65 1 61 10.2
11 6.5 66 70 1 66 10.2
12 7 71 76 1 71 10.1
13 7.5 76 81 1 76 10.1
14 8 81 86 1 81 10.1
15 8.5 86 91 1 86 10.1

(1) Refer to the "ADC: DMA Read of Stale Result" advisory in the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.

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Sample n
Input on SOC0.CHSEL

Input on SOC1.CHSEL
Sample n+1

ADC S+H SOC0 SOC1

SYSCLK

ADCCLK

ADCTRIG

ADCSOCFLG.SOC0

ADCSOCFLG.SOC1

ADCRESULT0 (old data) Sample n

ADCRESULT1 (old data) Sample n+1

ADCINTFLG.ADCINTx

tSH tLAT

tEOC

tINT

Figure 6-39. ADC Timings for 12-Bit Mode

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6.10.1.2.7.2 ADC Timings in 16-Bit Mode

ADCCLK
ADCCLK PRESCALE SYSCLK CYCLES
CYCLES
ADCCTL2 RATIO
tEOC tLAT (1) tINT(EARLY) tINT(LATE) tEOC
[PRESCALE] ADCCLK:SYSCLK
0 1 31 32 1 31 31.0
1 1.5 Invalid
2 2 60 61 1 60 30.0
3 2.5 75 75 1 75 30.0
4 3 90 91 1 90 30.0
5 3.5 104 106 1 104 29.7
6 4 119 120 1 119 29.8
7 4.5 134 134 1 134 29.8
8 5 149 150 1 149 29.8
9 5.5 163 165 1 163 29.6
10 6 178 179 1 178 29.7
11 6.5 193 193 1 193 29.7
12 7 208 209 1 208 29.7
13 7.5 222 224 1 222 29.6
14 8 237 238 1 237 29.6
15 8.5 252 252 1 252 29.6

(1) Refer to the "ADC: DMA Read of Stale Result" advisory in the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.

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Sample n

Input on SOC0.CHSEL

Input on SOC1.CHSEL
Sample n+1

ADC S+H SOC0 SOC1

SYSCLK

ADCCLK

ADCTRIG

ADCSOCFLG.SOC0

ADCSOCFLG.SOC1

ADCRESULT0 (old data) Sample n

ADCRESULT1 (old data) Sample n+1

ADCINTFLG.ADCINTx

tSH tLAT

tEOC

tINT

Figure 6-40. ADC Timings for 16-Bit Mode

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6.10.1.3 Temperature Sensor Electrical Data and Timing

The temperature sensor can be used to measure the device junction temperature. The temperature sensor
is sampled through an internal connection to the ADC and translated into a temperature through TI-provided
software. When sampling the temperature sensor, the ADC must meet the acquisition time in Section 6.10.1.3.1.
6.10.1.3.1 Temperature Sensor Electrical Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
Temperature accuracy ±15 °C
Start-up time (TSNSCTL[ENABLE] to sampling temperature sensor) 500 µs
ADC acquisition time 700 ns

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6.10.2 Comparator Subsystem (CMPSS)

Each CMPSS module includes two comparators, two internal voltage reference DACs (CMPSS DACs), two
digital glitch filters, and one ramp generator. There are two inputs, CMPINxP and CMPINxN. Each of these
inputs will be internally connected to an ADCIN pin. The CMPINxP pin is always connected to the positive input
of the CMPSS comparators. CMPINxN can be used instead of the DAC output to drive the negative comparator
inputs. There are two comparators, and therefore two outputs from the CMPSS module, which are connected
to the input of a digital filter module before being passed on to the Comparator TRIP crossbar and either PWM
modules or directly to a GPIO pin. Figure 6-41 shows the CMPSS connectivity on the 337-ball ZWT and 176-pin
PTP packages. Figure 6-42 shows CMPSS connectivity on the 100-pin PZP package.
Comparator Subsystem 1
CMPIN1P Pin CTRIP1H
Digital
VDDA or VDAC Filter CTRIPOUT1H

DAC12
CTRIP1H
CTRIP1L
DAC12 CTRIP1L CTRIP2H
Digital
CTRIPOUT1L CTRIP2L ePWMs
CMPIN1N Pin Filter ePWM X-BAR

Comparator Subsystem 2 CTRIP8H

CMPIN2P Pin CTRIP2H CTRIP8L
Digital
VDDA or VDAC Filter CTRIPOUT2H

DAC12

DAC12 CTRIP2L
Digital
Filter CTRIPOUT2L
CMPIN2N Pin

CTRIPOUT1H
CTRIPOUT1L
Comparator Subsystem 8 CTRIPOUT2H
CMPIN8P Pin CTRIP8H CTRIPOUT2L
Digital Output X-BAR GPIO Mux
VDDA or VDAC Filter CTRIPOUT8H
CTRIPOUT8H
DAC12 CTRIPOUT8L
DAC12 CTRIP8L
Digital
Filter CTRIPOUT8L
CMPIN8N Pin

Figure 6-41. CMPSS Connectivity (337-Ball ZWT and 176-Pin PTP)

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Comparator Subsystem 1
CMPIN1P Pin CTRIP1H
Digital
VDDA or VDAC Filter CTRIPOUT1H
CTRIP1H
DAC12
CTRIP1L
DAC12 CTRIP1L CTRIP2H
Digital CTRIP2L
Filter CTRIPOUT1L ePWM X-BAR ePWMs
CMPIN1N Pin CTRIP3H
CTRIP3L
CTRIP4H
Comparator Subsystem 2
CMPIN2P Pin CTRIP4L
CTRIP2H
Digital
VDDA or VDAC Filter CTRIPOUT2H

DAC12

DAC12 CTRIP2L
Digital
Filter CTRIPOUT2L
CMPIN2N Pin

Comparator Subsystem 3
CMPIN3P Pin CTRIP3H
Digital
VDDA or VDAC Filter CTRIPOUT3H CTRIPOUT1H
CTRIPOUT1L
DAC12 CTRIPOUT2H
CTRIPOUT2L Output X-BAR
CTRIP3L GPIO Mux
DAC12 Digital CTRIPOUT3H
Filter CTRIPOUT3L CTRIPOUT3L
CMPIN3N Pin
CTRIPOUT4H
CTRIPOUT4L
Comparator Subsystem 4
CMPIN4P Pin CTRIP4H
Digital
VDDA or VDAC Filter CTRIPOUT4H

DAC12

DAC12 CTRIP4L
Digital
Filter CTRIPOUT4L
CMPIN4N Pin

Figure 6-42. CMPSS Connectivity (100-Pin PZP)

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6.10.2.1 CMPSS Electrical Data and Timing

Section 6.10.2.1.1 shows the comparator electrical characteristics. Figure 6-43 shows the CMPSS comparator
input referred offset. Figure 6-44 shows the CMPSS comparator hysteresis.
6.10.2.1.1 Comparator Electrical Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Power-up time 500(2) µs
Comparator input (CMPINxx) range 0 VDDA V
Low common mode, inverting input set
Input referred offset error –20 20 mV
to 50 mV
1x 4 12 20
2x 17 24 33 CMPSS
Hysteresis(1)
3x 25 36 50 DAC LSB

4x 30 48 67
Step response 21 60
Response time (delay from CMPINx input change
Ramp response (1.65 V/µs) 26 ns
to output on ePWM X-BAR or Output X-BAR)
Ramp response (8.25 mV/µs) 30
Power Supply Rejection Ratio (PSRR) Up to 250 kHz 46 dB
Common Mode Rejection Ratio (CMRR) 40 dB

(1) The CMPSS DAC is used as the reference to determine how much hysteresis to apply. Therefore, hysteresis will scale with the
CMPSS DAC reference voltage. Hysteresis is available for all comparator input source configurations.
(2) See the "Analog Bandgap References" advisory of the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.

Note
The CMPSS inputs must be kept below VDDA + 0.3 V to ensure proper functional operation. If a
CMPSS input exceeds this level, an internal blocking circuit will isolate the internal comparator from
the external pin until the external pin voltage returns below VDDA + 0.3 V. During this time, the internal
comparator input will be floating and can decay below VDDA within approximately 0.5 µs. After this
time, the comparator could begin to output an incorrect result depending on the value of the other
comparator input.

Input Referred Offset

CTRIPx
Logic Level CTRIPx = 1

CTRIPx = 0

COMPINxP
Voltage
0 CMPINxN or
DACxVAL

Figure 6-43. CMPSS Comparator Input Referred Offset

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Hysteresis

CTRIPx
Logic Level CTRIPx = 1

CTRIPx = 0

COMPINxP
Voltage
0 CMPINxN or
DACxVAL

Figure 6-44. CMPSS Comparator Hysteresis

Section 6.10.2.1.2 shows the CMPSS DAC static electrical characteristics. Figure 6-45 shows the CMPSS DAC
static offset. Figure 6-46 shows the CMPSS DAC static gain. Figure 6-47 shows the CMPSS DAC static linearity.
6.10.2.1.2 CMPSS DAC Static Electrical Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Internal reference 0 VDDA (1)
CMPSS DAC output range V
External reference 0 VDAC
Static offset error(2) –25 25 mV
Static gain error(2) –2 2 % of FSR
Static DNL Endpoint corrected >–1 4 LSB
Static INL Endpoint corrected –16 16 LSB
Settling to 1 LSB after full-scale output
Settling time 1 µs
change
Resolution 12 bits
Error induced by comparator trip or
CMPSS DAC output disturbance(3) CMPSS DAC code change within the –100 100 LSB
same CMPSS module
CMPSS DAC disturbance time(3) 200 ns
VDAC reference voltage When VDAC is reference 2.4 2.5 or 3.0 VDDA V
VDAC load(4) When VDAC is reference 6 kΩ

(1) The maximum output voltage is VDDA when VDAC > VDDA.
(2) Includes comparator input referred errors.
(3) Disturbance error may be present on the CMPSS DAC output for a certain amount of time after a comparator trip.
(4) Per active CMPSS module.

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Note
Figures not drawn to scale.

Offset Error

Figure 6-45. CMPSS DAC Static Offset

Ideal Gain

Actual Gain

Actual Linear Range

Figure 6-46. CMPSS DAC Static Gain

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Linearity Error

Figure 6-47. CMPSS DAC Static Linearity

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6.10.3 Buffered Digital-to-Analog Converter (DAC)

The buffered DAC module consists of an internal 12-bit DAC and an analog output buffer that is capable of
driving an external load. An integrated pulldown resistor on the DAC output helps to provide a known pin
voltage when the output buffer is disabled. This pulldown resistor cannot be disabled and remains as a passive
component on the pin, even for other shared pin mux functions. Software writes to the DAC value register can
take effect immediately or can be synchronized with EPWMSYNCPER events.
Each buffered DAC has the following features:
• 12-bit programmable internal DAC
• Selectable reference voltage
• Pulldown resistor on output
• Ability to synchronize with EPWMSYNCPER
The block diagram for the buffered DAC is shown in Figure 6-48.
DACCTL[DACREFSEL]

VDAC
0
DACREF
VREFHI 1

VDDA
SYSCLK > DACCTL[LOADMODE]

DACVALS D Q 0
12-bit DACOUT
DACVALA DAC Buffer
D Q 1
RPD
EPWM1SYNCPER 0
EPWM2SYNCPER 1 EN
EPWM3SYNCPER 2 VSSA VSSA
... Y
EPWMnSYNCPER n-1

DACCTL[SYNCSEL]
Figure 6-48. DAC Module Block Diagram

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6.10.3.1 Buffered DAC Electrical Data and Timing

Section 6.10.3.1.1 shows the buffered DAC electrical characteristics. Figure 6-49 shows the buffered DAC offset.
Figure 6-50 shows the buffered DAC gain. Figure 6-51 shows the buffered DAC linearity.
6.10.3.1.1 Buffered DAC Electrical Characteristics
over recommended operating conditions (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Power-up time 500(8) µs
Offset error Midpoint –10 10 mV
Gain error(2) –2.5 2.5 % of FSR
DNL(3) Endpoint corrected > –1 ±0.4 1 LSB
INL Endpoint corrected –5 ±2 5 LSB
Settling to 2 LSBs after 0.3V-to-3V
DACOUTx settling time 2 µs
transition
Resolution 12 bits
Voltage output range(4) 0.3 VDDA – 0.3 V
Capacitive load Output drive capability 100 pF
Resistive load Output drive capability 5 kΩ
RPD pulldown resistor 50 kΩ
Reference voltage(5) VDAC or VREFHI 2.4 2.5 or 3.0 VDDA V
Reference input resistance(6) VDAC or VREFHI 170 kΩ
Integrated noise from 100 Hz to 100 kHz 500 µVrms
Output noise
Noise density at 10 kHz 711 nVrms/√Hz
Glitch energy 1.5 V-ns
DC up to 1 kHz 70
PSRR(7) dB
100 kHz 30
SNR 1020 Hz 67 dB
THD 1020 Hz –63 dB
1020 Hz, including harmonics and spurs 66
SFDR dBc
1020 Hz, including only spurs 104

(1) Typical values are measured with VREFHI = 3.3 V unless otherwise noted. Minimum and Maximum values are tested or characterized
with VREFHI = 2.5 V.
(2) Gain error is calculated for linear output range.
(3) The DAC output is monotonic.
(4) This is the linear output range of the DAC. The DAC can generate voltages outside this range, but the output voltage will not be linear
due to the buffer.
(5) For best PSRR performance, VDAC or VREFHI should be less than VDDA.
(6) Per active Buffered DAC module.
(7) VREFHI = 3.2 V, VDDA = 3.3 V DC + 100 mV Sine.
(8) See the "Analog Bandgap References" advisory of the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.

Note
The VDAC pin must be kept below VDDA + 0.3 V to ensure proper functional operation. If the VDAC
pin exceeds this level, a blocking circuit may activate, and the internal value of VDAC may float to 0 V
internally, giving improper DAC output.

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Offset Error

Code 2048

Figure 6-49. Buffered DAC Offset

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Actual Gain

Ideal Gain

Code 373 Code 3722

Linear Range
(3.3-V Reference)

Figure 6-50. Buffered DAC Gain

Linearity Error

Code 373 Code 3722

Linear Range
(3.3-V Reference)

Figure 6-51. Buffered DAC Linearity

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6.10.3.2 CMPSS DAC Dynamic Error

When using the ramp generator to control the internal DAC, the step size can vary based on the application
need. Since the step size of the DAC is less than a full scale transition, the settling time is improved from the
electrical specification listed in the CMPSS DAC Static Electrical Characteristics table. The equation below and
Figure 6-52 can give guidance on the expected voltage error from ideal based on different RAMPxDECVALA
values.

DYNAMICERROR = m × RAMPxDECVALA + b (5)

Table 6-14. DAC Max Dynamic Error Terms
EQUATION PARAMETER MIN (LSB) MAX (LSB)
m 0.167 0.30
b 3.7 5.6

Note
Above error terms are based on the max SYSCLK of the target device. If operating below the max
SYSCLK then the "m" error term should be scaled accordingly.

500
Max Error
450 Min Error

400
DYNAMIC ERROR (LSB)

350

300

250

200

150

100

0
0 200 400 600 800 1000 1200 1400 1600
RAMPxDECVAL
Figure 6-52. CMPSS DAC Dynamic Error

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6.11 Control Peripherals

Note
For the actual number of each peripheral on a specific device, see Table 4-1.

6.11.1 Enhanced Capture (eCAP)

The eCAP module can be used in systems where accurate timing of external events is important.
Applications for eCAP include:
• Speed measurements of rotating machinery (for example, toothed sprockets sensed through Hall sensors)
• Elapsed time measurements between position sensor pulses
• Period and duty cycle measurements of pulse train signals
• Decoding current or voltage amplitude derived from duty cycle encoded current/voltage sensors
The eCAP module includes the following features:
• 4-event time-stamp registers (each 32 bits)
• Edge-polarity selection for up to four sequenced time-stamp capture events
• Interrupt on either of the four events
• Single shot capture of up to four event timestamps
• Continuous mode capture of timestamps in a four-deep circular buffer
• Absolute time-stamp capture
• Difference (Delta) mode time-stamp capture
• All of the above resources dedicated to a single input pin
• When not used in capture mode, the eCAP module can be configured as a single-channel PWM output
(APWM).
The eCAP inputs connect to any GPIO input through the Input X-BAR. The APWM outputs connect to GPIO pins
through the Output X-BAR to OUTPUTx positions in the GPIO mux. See Section 5.4.2 and Section 5.4.3.
Figure 6-53 shows the block diagram of an eCAP module.

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CTRPHS
(phase register−32 bit) APWM mode

SYNC
SYNCIn
OVF CTR_OVF
TSCTR CTR [0−31]
SYNCOut PWM
(counter−32 bit) Delta−mode PRD [0−31] compare
RST
logic
CMP [0−31]
32

CTR [0−31] CTR=PRD

CTR=CMP
32
PRD [0−31]

eCAPx

MODE SELECT
32 CAP1 LD1 Polarity
LD
(APRD active) select

APRD 32
shadow CMP [0−31]
32

32 CAP2 LD2 Polarity

LD
(ACMP active) select

Event Event
32 ACMP
qualifier
shadow Prescale

32 Polarity
CAP3 LD3 select
LD
(APRD shadow)

32 CAP4 LD4
LD Polarity
(ACMP shadow) select

4
Capture events 4

CEVT[1:4]

Interrupt Continuous /
to PIE Trigger Oneshot
and CTR_OVF Capture Control
Flag
CTR=PRD
control
CTR=CMP

Figure 6-53. eCAP Block Diagram

The eCAP module is clocked by PERx.SYSCLK.

The clock enable bits (ECAP1–ECAP6) in the PCLKCR3 register turn off the eCAP module individually (for
low-power operation). Upon reset, ECAP1ENCLK is set to low, indicating that the peripheral clock is off.

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6.11.1.1 eCAP Electrical Data and Timing

Section 6.11.1.1.1 shows the eCAP timing requirement and Section 6.11.1.1.2 shows the eCAP switching
characteristics.
6.11.1.1.1 eCAP Timing Requirement

MIN(1) MAX UNIT

Asynchronous 2tc(SYSCLK) cycles
tw(CAP) Capture input pulse width Synchronous 2tc(SYSCLK) cycles
With input qualifier 1tc(SYSCLK) + tw(IQSW) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.

6.11.1.1.2 eCAP Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
tw(APWM) Pulse duration, APWMx output high/low 20 ns

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6.11.2 Enhanced Pulse Width Modulator (ePWM)

The ePWM peripheral is a key element in controlling many of the power electronic systems found in both
commercial and industrial equipment. The ePWM type-4 module is able to generate complex pulse width
waveforms with minimal CPU overhead by building the peripheral up from smaller modules with separate
resources that can operate together to form a system. Some of the highlights of the ePWM type-4 module
include complex waveform generation, dead-band generation, a flexible synchronization scheme, advanced
trip-zone functionality, and global register reload capabilities.
Figure 6-54 shows the signal interconnections with the ePWM. Figure 6-55 shows the ePWM trip input
connectivity.

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TBCTL2[SYNCOSELX]
Time-Base (TB)
Disable 00
CTR=CMPC 01
TBPRD Shadow (24) CTR=CMPD 10
TBPRDHR (8) Rsvd 11 CTR=ZERO Sync EPWMxSYNCO
TBPRD Active (24) Out
TBCTL[SWFSYNC] CTR=CMPB
8 Select
CTR=PRD EPWMxSYNCI

TBCTL[PHSEN] TBCTL[SYNCOSEL]
Counter DCAEVT1.sync
(A)

Up/Down (A)
DCBEVT1.sync
(16 Bit)
CTR=ZERO
TBCTR
Active (16) CTR_Dir
CTR=PRD
EPWMx_INT
TBPHSHR (8) CTR=ZERO
16 8 CTR=PRD or ZERO
Phase EPWMxSOCA On-chip
TBPHS Active (24) CTR=CMPA Event
Control ADC
CTR=CMPB Trigger EPWMxSOCB
CTR=CMPC and
Interrupt
CTR=CMPD (ET) ADCSOCOUTSELECT
Counter Compare (CC)
Action CTR_Dir
Qualifier (A) Select and pulse stretch
CTR=CMPA (AQ) DCAEVT1.soc
(A) for external ADC
DCBEVT1.soc
CMPAHR (8)
ADCSOCAO
16 ADCSOCBO
HiRes PWM (HRPWM)
CMPA Active (24) CMPAHR (8)

CMPA Shadow (24) EPWMA ePWMxA

Dead PWM Trip

CTR=CMPB Chopper Zone
Band
CMPBHR (8) (DB) (PC) (TZ)
16
EPWMB ePWMxB
CMPB Active (24)

CMPB Shadow (24)

CMPBHR (8)
EPWMx_TZ_INT
TBCNT(16) TZ1 to TZ3
CTR=CMPC
CTR=ZERO EMUSTOP
CMPC[15-0] 16 DCAEVT1.inter CLOCKFAIL
DCBEVT1.inter
EQEPxERR
CMPC Active (16) DCAEVT2.inter (A)
DCBEVT2.inter DCAEVT1.force
(A)
CMPC Shadow (16) DCAEVT2.force
(A)
DCBEVT1.force
(A)
TBCNT(16) DCBEVT2.force
CTR=CMPD

CMPD[15-0] 16

CMPD Active (16)

CMPD Shadow (16)

Copyright © 2017, Texas Instruments Incorporated

A. These events are generated by the ePWM digital compare (DC) submodule based on the levels of the TRIPIN inputs.

Figure 6-54. ePWM Submodules and Critical Internal Signal Interconnects

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Figure 6-55. ePWM Trip Input Connectivity

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6.11.2.1 Control Peripherals Synchronization

The ePWM and eCAP synchronization chain on the device provides flexibility in partitioning the ePWM and
eCAP modules between CPU1 and CPU2 and allows localized synchronization within the modules belonging to
the same CPU. Like the other peripherals, the partitioning of the ePWM and eCAP modules needs to be done
using the CPUSELx registers. Figure 6-56 shows the synchronization chain architecture.
EXTSYNCIN1 EXTSYNCIN2

EPWM1
EPWM1SYNCOUT

EPWM2

EPWM3 EPWM4
EPWM4SYNCOUT

EPWM5

SYNCSELECT.EPWM4SYNCIN
EPWM6
EPWM7 EXTSYNCOUT
EPWM7SYNCOUT
Pulse-Stretched
(8 PLLSYSCLK
Cycles)
EPWM8

SYNCSELECT.EPWM7SYNCIN

EPWM9
EPWM10 EPWM10SYNCOUT

EPWM11
SYNCSELECT.EPWM10SYNCIN

EPWM12 ECAP1
ECAP1SYNCOUT

ECAP2
SYNCSELECT.ECAP1SYNCIN

ECAP3 ECAP4

SYNCSELECT.ECAP4SYNCIN SYNCSELECT.SYNCOUT
ECAP5

ECAP6

Figure 6-56. Synchronization Chain Architecture

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6.11.2.2 ePWM Electrical Data and Timing

Section 6.11.2.2.1 shows the PWM timing requirements and Section 6.11.2.2.2 shows the PWM switching
characteristics.
6.11.2.2.1 ePWM Timing Requirements

MIN(1) MAX UNIT

f(EPWM) Frequency, EPWMCLK(2) 100 MHz
Asynchronous 2tc(EPWMCLK) cycles
tw(SYNCIN) Sync input pulse width Synchronous 2tc(EPWMCLK) cycles
With input qualifier 1tc(EPWMCLK) + tw(IQSW) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.
(2) For SYSCLK above 100 MHz, the EPWMCLK must be half of SYSCLK.

6.11.2.2.2 ePWM Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
tw(PWM) Pulse duration, PWMx output high/low 20 ns
tw(SYNCOUT) Sync output pulse width 8tc(SYSCLK) cycles
Delay time, trip input active to PWM forced high
td(TZ-PWM) Delay time, trip input active to PWM forced low 25 ns
Delay time, trip input active to PWM Hi-Z

6.11.2.2.3 Trip-Zone Input Timing

Section 6.11.2.2.3.1 shows the trip-zone input timing requirements. Figure 6-57 shows the PWM Hi-Z
characteristics.
6.11.2.2.3.1 Trip-Zone Input Timing Requirements

MIN(1) MAX UNIT

Asynchronous 1tc(EPWMCLK) cycles
tw(TZ) Pulse duration, TZx input low Synchronous 2tc(EPWMCLK) cycles
With input qualifier 1tc(EPWMCLK) + tw(IQSW) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.

EPWMCLK

tw(TZ)
(A)
TZ

td(TZ-PWM)

(B)
PWM

A. TZ: TZ1, TZ2, TZ3, TRIP1–TRIP12

B. PWM refers to all the PWM pins in the device. The state of the PWM pins after TZ is taken high depends on the PWM recovery
software.

Figure 6-57. PWM Hi-Z Characteristics

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6.11.2.3 External ADC Start-of-Conversion Electrical Data and Timing

Section 6.11.2.3.1 shows the external ADC start-of-conversion switching characteristics. Figure 6-58 shows the
ADCSOCAO or ADCSOCBO timing.
6.11.2.3.1 External ADC Start-of-Conversion Switching Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
tw(ADCSOCL) Pulse duration, ADCSOCxO low 32tc(SYSCLK) cycles

tw(ADCSOCL)
ADCSOCAO
or
ADCSOCBO

Figure 6-58. ADCSOCAO or ADCSOCBO Timing

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6.11.3 Enhanced Quadrature Encoder Pulse (eQEP)

The eQEP module interfaces directly with linear or rotary incremental encoders to obtain position, direction, and
speed information from rotating machines used in high-performance motion and position-control systems.
Each eQEP peripheral comprises five major functional blocks:
• Quadrature Capture Unit (QCAP)
• Position Counter/Control Unit (PCCU)
• Quadrature Decoder Unit (QDU)
• Unit Time Base for speed and frequency measurement (UTIME)
• Watchdog timer for detecting stalls (QWDOG)
The eQEP peripherals are clocked by PERx.SYSCLK. Figure 6-59 shows the eQEP block diagram.

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System Control
Registers
To CPU
EQEPxENCLK
SYSCLK

Data Bus
QCPRD
QCAPCTL QCTMR

16 16

16
Quadrature
Capture
QCTMRLAT Unit
(QCAP)
QCPRDLAT

Registers QUTMR QWDTMR

Used by QUPRD QWDPRD
Multiple Units
32 16
QEPCTL
QEPSTS UTOUT
UTIME QWDOG QDECCTL
QFLG
16
WDTOUT
EQEPxAIN
EQEPxINT QCLK EQEPxA/XCLK
PIE EQEPxBIN
QDIR
EQEPxIIN
16 Position Counter/ QI EQEPxB/XDIR
EQEPxIOUT
Control Unit QS Quadrature GPIO
(PCCU) Decoder EQEPxIOE
QPOSLAT PHE (QDU) MUX EQEPxI
EQEPxSIN
QPOSSLAT PCSOUT
EQEPxSOUT
QPOSILAT EQEPxS
EQEPxSOE
32 32 16

QPOSCNT QPOSCMP QEINT

QPOSINIT QFRC
QPOSMAX QCLR
QPOSCTL

eQEP Peripheral

Figure 6-59. eQEP Block Diagram

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6.11.3.1 eQEP Electrical Data and Timing

Section 6.11.3.1.1 lists the eQEP timing requirement and Section 6.11.3.1.2 lists the eQEP switching
characteristics.
6.11.3.1.1 eQEP Timing Requirements

MIN(1) MAX UNIT

Asynchronous(2)/Synchronous 2tc(SYSCLK) cycles
tw(QEPP) QEP input period
With input qualifier 2[1tc(SYSCLK) + tw(IQSW)] cycles
Asynchronous(2)/Synchronous 2tc(SYSCLK) cycles
tw(INDEXH) QEP Index Input High time
With input qualifier 2tc(SYSCLK) + tw(IQSW) cycles
Asynchronous(2)/Synchronous 2tc(SYSCLK) cycles
tw(INDEXL) QEP Index Input Low time
With input qualifier 2tc(SYSCLK) + tw(IQSW) cycles
Asynchronous(2)/Synchronous 2tc(SYSCLK) cycles
tw(STROBH) QEP Strobe High time
With input qualifier 2tc(SYSCLK) + tw(IQSW) cycles
Asynchronous(2)/Synchronous 2tc(SYSCLK) cycles
tw(STROBL) QEP Strobe Input Low time
With input qualifier 2tc(SYSCLK) + tw(IQSW) cycles

(1) For an explanation of the input qualifier parameters, see Section 6.9.8.2.1.
(2) See the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata for limitations in the asynchronous mode.

6.11.3.1.2 eQEP Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER MIN MAX UNIT
td(CNTR)xin Delay time, external clock to counter increment 4tc(SYSCLK) cycles
td(PCS-OUT)QEP Delay time, QEP input edge to position compare sync output 6tc(SYSCLK) cycles

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6.11.4 High-Resolution Pulse Width Modulator (HRPWM)

The HRPWM combines multiple delay lines in a single module and a simplified calibration system by using a
dedicated calibration delay line. For each ePWM module, there are two HR outputs:
• HR Duty and Deadband control on Channel A
• HR Duty and Deadband control on Channel B
The HRPWM module offers PWM resolution (time granularity) that is significantly better than what can be
achieved using conventionally derived digital PWM methods. The key points for the HRPWM module are:
• Significantly extends the time resolution capabilities of conventionally derived digital PWM
• This capability can be used in both single edge (duty cycle and phase-shift control) as well as dual edge
control for frequency/period modulation.
• Finer time granularity control or edge positioning is controlled through extensions to the Compare A, B,
phase, period and deadband registers of the ePWM module.

Note
The minimum HRPWMCLK frequency allowed for HRPWM is 60 MHz.

6.11.4.1 HRPWM Electrical Data and Timing

Section 6.11.4.1.1 lists the high-resolution PWM timing requirements. Section 6.11.4.1.2 lists the high-resolution
PWM switching characteristics.
6.11.4.1.1 High-Resolution PWM Timing Requirements

MIN MAX UNIT

f(EPWM) Frequency, EPWMCLK(1) 100 MHz
f(HRPWM) Frequency, HRPWMCLK 60 100 MHz

(1) For SYSCLK above 100 MHz, the EPWMCLK must be half of SYSCLK.

6.11.4.1.2 High-Resolution PWM Characteristics

PARAMETER MIN TYP MAX UNIT

Micro Edge Positioning (MEP) step size(1) 150 310 ps

(1) The MEP step size will be largest at high temperature and minimum voltage on VDD. MEP step size will increase with higher
temperature and lower voltage and decrease with lower temperature and higher voltage.
Applications that use the HRPWM feature should use MEP Scale Factor Optimizer (SFO) estimation software functions. See the TI
software libraries for details of using SFO functions in end applications. SFO functions help to estimate the number of MEP steps per
SYSCLK period dynamically while the HRPWM is in operation.

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6.11.5 Sigma-Delta Filter Module (SDFM)

The SDFM is a four-channel digital filter designed specifically for current measurement and resolver position
decoding in motor control applications. Each channel can receive an independent sigma-delta (ΣΔ) modulated
bit stream. The bit streams are processed by four individually programmable digital decimation filters. The filter
set includes a fast comparator for immediate digital threshold comparisons for overcurrent and undercurrent
monitoring. Figure 6-60 shows a block diagram of the SDFMs.
SDFM features include:
• Eight external pins per SDFM module:
– Four sigma-delta data input pins per SDFM module (SDx_Dy, where x = 1 to 2 and y = 1 to 4)
– Four sigma-delta clock input pins per SDFM module (SDx_Cy, where x = 1 to 2 and y = 1 to 4)
• Four different configurable modulator clock modes:
– Modulator clock rate equals modulator data rate
– Modulator clock rate running at half the modulator data rate
– Modulator data is Manchester encoded. Modulator clock not required.
– Modulator clock rate is double that of modulator data rate
• Four independent configurable comparator units:
– Four different filter type selection (Sinc1/Sinc2/Sincfast/Sinc3) options available
– Ability to detect over-value and under-value conditions
– Comparator Over-Sampling Ratio (COSR) value for comparator programmable from 1 to 32
• Four independent configurable data filter units:
– Four different filter type selection (Sinc1/Sinc2/Sincfast/Sinc3) options available
– Data filter Over-Sampling Ratio (DOSR) value for data filter unit programmable from 1 to 256
– Ability to enable or disable individual filter module
– Ability to synchronize all four independent filters of a SDFM module using the Master Filter Enable (MFE)
bit or the PWM signals.
• Filter data can be 16-bit or 32-bit representation
• PWMs can be used to generate modulator clock for sigma-delta modulators

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SDFM- Sigma Delta Filter Module

G4 Filter Channel 1
Streams
IEL SD1INT
R
Comparator filter IEH Interrupt
SD1_D1 SD2INT
Unit
Input PIE
SD1_C1 Ctrl Data filter R
FILRES

PWM11.CMPC

SD1_D2 Filter Channel 2

SD1_C2
FILRES

Register Data bus

SD1_D3 Filter Channel 3 Map
SD1_C3
FILRES
PWM11.CMPD

Output
G4 Filter Channel 1 XBar
Streams
IEL SD2FLT1.IEH
R
Comparator filter IEH Interrupt SD2FLT1.IEL
SD2_D1 Unit
Input SD2FLT2.IEH
SD2_C1 Ctrl Data filter R
Data filter SD2FLT2.IEL
FILRES
SD2FLT3.IEH
PWM12.CMPC SD2FLT3.IEL
SD2_D2 Filter Channel 2 SD2FLT4.IEH
SD2_C2 SD2FLT4.IEL
FILRES

Register Data bus

SD2_D3 Filter Channel 3 Map
SD2_C3
PWM12.CMPD FILRES

SD2_D4 Filter Channel 4

SD2_C4
FILRES

Figure 6-60. SDFM Block Diagram

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6.11.5.1 SDFM Electrical Data and Timing (Using ASYNC)

SDFM operation with asynchronous GPIO is defined by setting GPyQSELn = 0b11. Section 6.11.5.1.1 lists the
SDFM timing requirements when using the asynchronous GPIO (ASYNC) option. Figure 6-61 through Figure
6-64 show the SDFM timing diagrams.
6.11.5.1.1 SDFM Timing Requirements When Using Asynchronous GPIO (ASYNC) Option

MIN MAX UNIT

Mode 0
tc(SDC)M0 Cycle time, SDx_Cy 40 256 * SYSCLK period ns
tw(SDCH)M0 Pulse duration, SDx_Cy high 10 tc(SDC)M0 – 10 ns
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCH)M0 5 ns
high
th(SDCH-SDD)M0 Hold time, SDx_Dy wait after SDx_Cy goes high 5 ns
Mode 1
tc(SDC)M1 Cycle time, SDx_Cy 80 256 * SYSCLK period ns
tw(SDCH)M1 Pulse duration, SDx_Cy high 10 tc(SDC)M1 – 10 ns
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCL)M1 5 ns
low
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCH)M1 5 ns
high
th(SDCL-SDD)M1 Hold time, SDx_Dy wait after SDx_Cy goes low 5 ns
th(SDCH-SDD)M1 Hold time, SDx_Dy wait after SDx_Cy goes high 5 ns
Mode 2
tc(SDD)M2 Cycle time, SDx_Dy 8 * tc(SYSCLK) 20 * tc(SYSCLK) ns
tw(SDDH)M2 Pulse duration, SDx_Dy high 10 ns
SDx_Dy long pulse duration keepout, where the
long pulse must not fall within the MIN or MAX
values listed.
Long pulse is defined as the high or low pulse
tw(SDD_LONG_KEEPOUT)M2 (N * tc(SYSCLK)) – 0.5 (N * tc(SYSCLK)) + 0.5 ns
which is the full width of the Manchester bit-clock
period.
This requirement must be satisfied for any integer
between 8 and 20.
SDx_Dy Short pulse duration for a high or low
pulse (SDD_SHORT_H or SDD_SHORT_L).
tw(SDD_LONG) / 2 – tw(SDD_LONG) / 2 +
tw(SDD_SHORT)M2 Short pulse is defined as the high or low pulse ns
tc(SYSCLK) tc(SYSCLK)
which is half the width of the Manchester bit-clock
period.
SDx_Dy Long pulse variation (SDD_LONG_H –
tw(SDD_LONG_DUTY)M2 – tc(SYSCLK) tc(SYSCLK) ns
SDD_LONG_L)
SDx_Dy Short pulse variation (SDD_SHORT_H –
tw(SDD_SHORT_DUTY)M2 – tc(SYSCLK) tc(SYSCLK) ns
SDD_SHORT_L)
Mode 3
tc(SDC)M3 Cycle time, SDx_Cy 40 256 * SYSCLK period ns
tw(SDCH)M3 Pulse duration, SDx_Cy high 10 tc(SDC)M3 – 5 ns
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCH)M3 5 ns
high
th(SDCH-SDD)M3 Hold time, SDx_Dy wait after SDx_Cy goes high 5 ns

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WARNING
The SDFM clock inputs (SDx_Cy pins) directly clock the SDFM module when there is no GPIO
input synchronization. Any glitches or ringing noise on these inputs can corrupt the SDFM module
operation. Special precautions should be taken on these signals to ensure a clean and noise-free
signal that meets SDFM timing requirements. Precautions such as series termination for ringing due
to any impedance mismatch of the clock driver and spacing of traces from other noisy signals are
recommended.

WARNING
See the "SDFM: Manchester Mode (Mode 2) Does Not Produce Correct Filter Results Under Several
Conditions" advisory in the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.

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Mode 0 tw(SDCH)M0 tc(SDC)M0

SDx_Cy

tsu(SDDV-SDCH)M0 th(SDCH-SDD)M0

SDx_Dy

Figure 6-61. SDFM Timing Diagram – Mode 0

Mode 1
tw(SDCH)M1 tc(SDC)M1

SDx_Cy

tsu(SDDV-SDCL)M1 tsu(SDDV-SDCH)M1

SDx_Dy

th(SDCL-SDD)M1 th(SDCH-SDD)M1

Figure 6-62. SDFM Timing Diagram – Mode 1

Mode 2
(Manchester-encoded-bit stream)

tc(SDD)M2

Modulator
Internal clock

tw(SDDH)M2

Modulator
Internal data 1 1 0 1 1 0 0 1 1

tw(SDD_LONG_KEEPOUT)

SDx-Dy tw(SDD_LONG_L) tw(SDD_LONG_H)

tw(SDD_SHORT_H) tw(SDD_SHORT_L)
N x tc(SYSCLK) + 0.5
N x SYSCLK
N x tc(SYSCLK) ±0.5
±

SYSCLK

Figure 6-63. SDFM Timing Diagram – Mode 2

Mode 3 (CLKx is driven externally)
tc(SDC)M3
tw(SDCH)M3

SDx_Cy

tsu(SDDV-SDCH)M3 th(SDCH-SDD)M3

SDx_Dy

Figure 6-64. SDFM Timing Diagram – Mode 3

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6.11.5.2 SDFM Electrical Data and Timing (Using 3-Sample GPIO Input Qualification)
SDFM operation with qualified GPIO (3-sample window) is defined by setting GPyQSELn = 0b01. When using
this qualified GPIO (3-sample window) mode, the timing requirement for the tw(GPI) pulse duration of 2tc(SYSCLK)
must be met. It is important for both SD-Cx and SD-Dx pairs to be configured with the same GPIO qualification
option. Section 6.11.5.2.1 lists the SDFM timing requirements when using the GPIO input qualification (3-sample
window) option. Figure 6-61 through Figure 6-64 show the SDFM timing diagrams.
6.11.5.2.1 SDFM Timing Requirements When Using GPIO Input Qualification (3-Sample Window) Option

MIN(1) MAX UNIT

Mode 0
tc(SDC)M0 Cycle time, SDx_Cy 10 * SYSCLK period 256 * SYSCLK period ns
tw(SDCHL)M0 Pulse duration, SDx_Cy high/low 4 * SYSCLK period 6 * SYSCLK period ns
tw(SDDHL)M0 Pulse duration, SDx_Dy high/low 4 * SYSCLK period ns
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCH)M0 2 * SYSCLK period ns
high
th(SDCH-SDD)M0 Hold time, SDx_Dy wait after SDx_Cy goes high 2 * SYSCLK period ns
Mode 1
tc(SDC)M1 Cycle time, SDx_Cy 20 * SYSCLK period 256 * SYSCLK period ns
tw(SDCH)M1 Pulse duration, SDx_Cy high 4 * SYSCLK period 6 * SYSCLK period ns
tw(SDDHL)M1 Pulse duration, SDx_Dy high/low 4 * SYSCLK period ns
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCL)M1 2 * SYSCLK period ns
low
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCH)M1 2 * SYSCLK period ns
high
th(SDCL-SDD)M1 Hold time, SDx_Dy wait after SDx_Cy goes low 2 * SYSCLK period ns
th(SDCH-SDD)M1 Hold time, SDx_Dy wait after SDx_Cy goes high 2 * SYSCLK period ns
Mode 2
tc(SDD)M2 Cycle time, SDx_Dy
Option unavailable
tw(SDDH)M2 Pulse duration, SDx_Dy high
Mode 3
tc(SDC)M3 Cycle time, SDx_Cy 10 * SYSCLK period 256 * SYSCLK period ns
tw(SDCHL)M3 Pulse duration, SDx_Cy high 4 * SYSCLK period 6 * SYSCLK period ns
tw(SDDHL)M3 Pulse duration, SDx_Dy high/low 4 * SYSCLK period ns
Setup time, SDx_Dy valid before SDx_Cy goes
tsu(SDDV-SDCH)M3 2 * SYSCLK period ns
high
th(SDCH-SDD)M3 Hold time, SDx_Dy wait after SDx_Cy goes high 2 * SYSCLK period ns

(1) SDFM timing requirements apply only when the GPIO input qualification type is the 3-sample window (GPyQSELx = 1; QUALPRD = 0)
option. It is important that both the SD-Cx and SD-Dx pairs be configured with the 3-sample window option.

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Note
The SDFM Qualified GPIO (3-sample) mode provides protection against SDFM module corruption due
to occasional random noise glitches on the SDx_Cy pin that may result in a false comparator trip
and filter output. For more details, refer to the "SDFM: Use Caution While Using SDFM Under Noisy
Conditions" usage note in the TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata.
The SDFM Qualified GPIO (3-sample) mode does not provide protection against persistent violations
of the above timing requirements. Timing violations will result in data corruption proportional to the
number of bits which violate the requirements.

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6.12 Communications Peripherals

Note
For the actual number of each peripheral on a specific device, see Table 4-1.

6.12.1 Controller Area Network (CAN)

The CAN module performs CAN protocol communication according to ISO 11898-1 (identical to Bosch® CAN
protocol specification 2.0 A, B). The bit rate can be programmed to values up to 1 Mbps. A CAN transceiver chip
is required for the connection to the physical layer (CAN bus).
For communication on a CAN network, individual message objects can be configured. The message objects and
identifier masks are stored in the Message RAM.
All functions concerning the handling of messages are implemented in the message handler. These functions
are: acceptance filtering; the transfer of messages between the CAN Core and the Message RAM; and the
handling of transmission requests.
The register set of the CAN may be accessed directly by the CPU through the module interface. These registers
are used to control and configure the CAN core and the message handler, and to access the message RAM.
The CAN module implements the following features:
• Complies with ISO11898-1 (Bosch® CAN protocol specification 2.0 A and B)
• Bit rates up to 1 Mbps
• Multiple clock sources
• 32 message objects (“message objects” are also referred to as “mailboxes” in this document; the two terms
are used interchangeably), each with the following properties:
– Configurable as receive or transmit
– Configurable with standard (11-bit) or extended (29-bit) identifier
– Supports programmable identifier receive mask
– Supports data and remote frames
– Holds 0 to 8 bytes of data
– Parity-checked configuration and data RAM
• Individual identifier mask for each message object
• Programmable FIFO mode for message objects
• Programmable loop-back modes for self-test operation
• Suspend mode for debug support
• Software module reset
• Automatic bus-on, after bus-off state by a programmable 32-bit timer
• Message-RAM parity-check mechanism
• Two interrupt lines

Note
For a CAN bit clock of 200 MHz, the smallest bit rate possible is 7.8125 kbps.

Note
Depending on the timing settings used, the accuracy of the on-chip zero-pin oscillator (specified in the
data manual) may not meet the requirements of the CAN protocol. In this situation, an external clock
source must be used.

Figure 6-65 shows the CAN block diagram.

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CAN_H
CAN Bus
CAN_L

External connections 3.3V CAN Transceiver

Device CANx RX pin CANx TX pin

CAN

CAN Core

Message RAM

Message Handler
Message
RAM
Interface
32 Register and Message
Message Object Access (IFx)
Objects Test Modes
(Mailboxes) Only

Module Interface

CANINT0 CANINT1
CPU Bus
(to ePIE)
Figure 6-65. CAN Block Diagram

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6.12.2 Inter-Integrated Circuit (I2C)

The I2C module has the following features:
• Compliance with the Philips Semiconductors I2C-bus specification (version 2.1):
– Support for 1-bit to 8-bit format transfers
– 7-bit and 10-bit addressing modes
– General call
– START byte mode
– Support for multiple master-transmitters and slave-receivers
– Support for multiple slave-transmitters and master-receivers
– Combined master transmit/receive and receive/transmit mode
– Data transfer rate of from 10 kbps up to 400 kbps (I2C Fast-mode rate)
• One 16-byte receive FIFO and one 16-byte transmit FIFO
• One interrupt that can be used by the CPU. This interrupt can be generated as a result of one of the following
conditions:
– Transmit-data ready
– Receive-data ready
– Register-access ready
– No-acknowledgment received
– Arbitration lost
– Stop condition detected
– Addressed as slave
• An additional interrupt that can be used by the CPU when in FIFO mode
• Module enable/disable capability
• Free data format mode

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Figure 6-66 shows how the I2C peripheral module interfaces within the device.
2
I C Module

I2CXSR I2CDXR

TX FIFO
SDA FIFO Interrupt to
CPU/PIE
RX FIFO

Peripheral Bus
I2CRSR I2CDRR

Control/Status
Registers CPU
Clock
SCL Synchronizer

Prescaler

Noise Filters
Interrupt to
I2C INT
CPU/PIE
Arbitrator

Figure 6-66. I2C Peripheral Module Interfaces

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6.12.2.1 I2C Electrical Data and Timing

Section 6.12.2.1.1 lists the I2C timing requirements. Section 6.12.2.1.2 lists the I2C switching characteristics.
Figure 6-67 shows the I2C timing diagram.

Note
To meet all of the I2C protocol timing specifications, the I2C module clock must be configured in the
range from 7 MHz to 12 MHz.
A pullup resistor must be chosen to meet the I2C standard timings. In most circumstances, 2.2 kΩ of
total bus resistance to VDDIO is sufficient. For evaluating pullup resistor values for a particular design,
see the I2C Bus Pullup Resistor Calculation Application Report.

6.12.2.1.1 I2C Timing Requirements

NO. MIN MAX UNIT

Standard mode
T0 fmod I2C module frequency 7 12 MHz
Hold time, START condition, SCL fall delay after
T1 th(SDA-SCL)START 4.0 µs
SDA fall
Setup time, Repeated START, SCL rise before SDA
T2 tsu(SCL-SDA)START 4.7 µs
fall delay
T3 th(SCL-DAT) Hold time, data after SCL fall 0 µs
T4 tsu(DAT-SCL) Setup time, data before SCL rise 250 ns
T5 tr(SDA) Rise time, SDA 1000(1) ns
T6 tr(SCL) Rise time, SCL 1000(1) ns
T7 tf(SDA) Fall time, SDA 300 ns
T8 tf(SCL) Fall time, SCL 300 ns
Setup time, STOP condition, SCL rise before SDA
T9 tsu(SCL-SDA)STOP 4.0 µs
rise delay
Pulse duration of spikes that will be suppressed by
T10 tw(SP) 0 50 ns
filter
T11 Cb capacitance load on each bus line 400 pF
Fast mode
T0 fmod I2C module frequency 7 12 MHz
Hold time, START condition, SCL fall delay after
T1 th(SDA-SCL)START 0.6 µs
SDA fall
Setup time, Repeated START, SCL rise before SDA
T2 tsu(SCL-SDA)START 0.6 µs
fall delay
T3 th(SCL-DAT) Hold time, data after SCL fall 0 µs
T4 tsu(DAT-SCL) Setup time, data before SCL rise 100 ns
T5 tr(SDA) Rise time, SDA 20 300 ns
T6 tr(SCL) Rise time, SCL 20 300 ns
T7 tf(SDA) Fall time, SDA 11.4 300 ns
T8 tf(SCL) Fall time, SCL 11.4 300 ns
Setup time, STOP condition, SCL rise before SDA
T9 tsu(SCL-SDA)STOP 0.6 µs
rise delay
Pulse duration of spikes that will be suppressed by
T10 tw(SP) 0 50 ns
filter
T11 Cb capacitance load on each bus line 400 pF

(1) In order to minimize the rise time, TI recommends using a strong pullup on both the SDA and SCL bus lines on the order of 2.2-kΩ net
pullup resistance. It is also recommended that the value of the pullup resistance used on both SCL and SDA pins be matched.

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6.12.2.1.2 I2C Switching Characteristics

over recommended operating conditions (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN MAX UNIT
Standard mode
S1 fSCL SCL clock frequency 0 100 kHz
S2 TSCL SCL clock period 10 µs
S3 tw(SCLL) Pulse duration, SCL clock low 4.7 µs
S4 tw(SCLH) Pulse duration, SCL clock high 4.0 µs
Bus free time between STOP and START
S5 tBUF 4.7 µs
conditions
S6 tv(SCL-DAT) Valid time, data after SCL fall 3.45 µs
S7 tv(SCL-ACK) Valid time, Acknowledge after SCL fall 3.45 µs
S8 II Input current on pins 0.1 Vbus < Vi < 0.9 Vbus –10 10 µA
Fast mode
S1 fSCL SCL clock frequency 0 400 kHz
S2 TSCL SCL clock period 2.5 µs
S3 tw(SCLL) Pulse duration, SCL clock low 1.3 µs
S4 tw(SCLH) Pulse duration, SCL clock high 0.6 µs
Bus free time between STOP and START
S5 tBUF 1.3 µs
conditions
S6 tv(SCL-DAT) Valid time, data after SCL fall 0.9 µs
S7 tv(SCL-ACK) Valid time, Acknowledge after SCL fall 0.9 µs
S8 II Input current on pins 0.1 Vbus < Vi < 0.9 Vbus –10 10 µA

6.12.2.1.3 I2C Timing Diagram

STOP START

SDA
ACK Contd...

S6 T10 S7
T5 T7 S3

SCL S4 Contd...

9th
T6 T8 clock
S2
Repeated
START STOP
S5

SDA
ACK
T2
T9
T1

SCL

9th
clock

Figure 6-67. I2C Timing Diagram

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6.12.3 Multichannel Buffered Serial Port (McBSP)

The McBSP module has the following features:
• Compatible with McBSP in TMS320C28x and TMS320F28x DSP devices
• Full-duplex communication
• Double-buffered data registers that allow a continuous data stream
• Independent framing and clocking for receive and transmit
• External shift clock generation or an internal programmable frequency shift clock
• 8-bit data transfer mode can be configured to transmit with LSB or MSB first
• Programmable polarity for both frame synchronization and data clocks
• Highly programmable internal clock and frame generation
• Direct interface to industry-standard CODECs, Analog Interface Chips (AICs), and other serially connected
A/D and D/A devices
• Supports AC97, I2S, and SPI protocols
• McBSP clock rate,
CLKSRG
CLKG =
(1 + CLKGDV )

where CLKSRG source could be LSPCLK, CLKX, or CLKR.

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Figure 6-68 shows the block diagram of the McBSP module.

TX
MXINT Interrupt
Peripheral Write Bus CPU
To CPU TX Interrupt Logic

McBSP Transmit 16 16
Interrupt Select Logic

PERx.LSPCLK DXR2 Transmit Buffer DXR1 Transmit Buffer

16 MFSXx
16
Compand Logic MCLKXx

XSR2 XSR1 MDXx

Peripheral Bus
Bridge

RSR1 MDRx
CPU DMA Bus RSR2
16
MCLKRx
16 Expand Logic
MFSRx
RBR2 Register RBR1 Register

16 16

DRR2 Receive Buffer DRR1 Receive Buffer

McBSP Receive
Interrupt Select Logic 16 16

RX
MRINT RX Interrupt Logic Interrupt
Peripheral Read Bus CPU
To CPU

Figure 6-68. McBSP Block Diagram

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6.12.3.1 McBSP Electrical Data and Timing

6.12.3.1.1 McBSP Transmit and Receive Timing
Section 6.12.3.1.1.1 shows the McBSP timing requirements. Section 6.12.3.1.1.2 shows the McBSP switching
characteristics. Figure 6-69 and Figure 6-70 show the McBSP timing diagrams.
6.12.3.1.1.1 McBSP Timing Requirements

NO.(1)
(2) MIN MAX UNIT

1 kHz
McBSP module clock (CLKG, CLKX, CLKR) range
25 MHz
40 ns
McBSP module cycle time (CLKG, CLKX, CLKR) range
1 ms
M11 tc(CKRX) Cycle time, CLKR/X CLKR/X ext 2P ns
M12 tw(CKRX) Pulse duration, CLKR/X high or CLKR/X low CLKR/X ext P–7 ns
M13 tr(CKRX) Rise time, CLKR/X CLKR/X ext 7 ns
M14 tf(CKRX) Fall time, CLKR/X CLKR/X ext 7 ns
CLKR int 18
M15 tsu(FRH-CKRL) Setup time, external FSR high before CLKR low ns
CLKR ext 2
CLKR int 0
M16 th(CKRL-FRH) Hold time, external FSR high after CLKR low ns
CLKR ext 6
CLKR int 18
M17 tsu(DRV-CKRL) Setup time, DR valid before CLKR low ns
CLKR ext 5
CLKR int 0
M18 th(CKRL-DRV) Hold time, DR valid after CLKR low ns
CLKR ext 3
CLKX int 18
M19 tsu(FXH-CKXL) Setup time, external FSX high before CLKX low ns
CLKX ext 2
CLKX int 0
M20 th(CKXL-FXH) Hold time, external FSX high after CLKX low ns
CLKX ext 6

(1) Polarity bits CLKRP = CLKXP = FSRP = FSXP = 0. If the polarity of any of the signals is inverted, then the timing references of that
signal are also inverted.
(2) 2P = 1/CLKG in ns. CLKG is the output of sample rate generator mux. CLKG = CLKSRG / (1 + CLKGDV). CLKSRG can be LSPCLK,
CLKX, CLKR as source. CLKSRG ≤ (SYSCLK/2).

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6.12.3.1.1.2 McBSP Switching Characteristics

over recommended operating conditions (unless otherwise noted)
NO.(1)
(2) PARAMETER MIN MAX UNIT

M1 tc(CKRX) Cycle time, CLKR/X CLKR/X int 2P ns

M2 tw(CKRXH) Pulse duration, CLKR/X high CLKR/X int D–5 (3) D+5 (3) ns
M3 tw(CKRXL) Pulse duration, CLKR/X low CLKR/X int C – 5 (3) C + 5 (3) ns
CLKR int -7 7.5
M4 td(CKRH-FRV) Delay time, CLKR high to internal FSR valid ns
CLKR ext 3 27
CLKX int -5 6
M5 td(CKXH-FXV) Delay time, CLKX high to internal FSX valid ns
CLKX ext 3 27

Disable time, CLKX high to DX high impedance CLKX int –8 8

M6 tdis(CKXH-DXHZ) ns
following last data bit CLKX ext 3 15
Delay time, CLKX high to DX valid. CLKX int –3 9
This applies to all bits except the first bit
CLKX ext 5 25
transmitted.

Delay time, CLKX high to DX CLKX int –3 8

M7 td(CKXH-DXV) DXENA = 0 ns
valid CLKX ext 5 20
Only applies to first bit CLKX int P–3 P+8
transmitted when in Data
DXENA = 1
Delay 1 or 2 (XDATDLY=01b CLKX ext P+5 P + 20
or 10b) modes

Enable time, CLKX high to CLKX int -6

DXENA = 0
DX driven CLKX ext 4
M8 ten(CKXH-DX) Only applies to first bit CLKX int P-6 ns
transmitted when in Data
DXENA = 1
Delay 1 or 2 (XDATDLY=01b CLKX ext P+4
or 10b) modes

Delay time, FSX high to DX FSX int 8

DXENA = 0
valid FSX ext 17
M9 td(FXH-DXV) Only applies to first bit FSX int P+8 ns
transmitted when in Data
DXENA = 1
Delay 0 (XDATDLY=00b) FSX ext P + 17
mode.

Enable time, FSX high to DX FSX int -3

DXENA = 0
driven FSX ext 6
M10 ten(FXH-DX) Only applies to first bit FSX int P-3 ns
transmitted when in Data
DXENA = 1
Delay 0 (XDATDLY=00b) FSX ext P+6
mode

(1) Polarity bits CLKRP = CLKXP = FSRP = FSXP = 0. If the polarity of any of the signals is inverted, then the timing references of that
signal are also inverted.
(2) 2P = 1/CLKG in ns.
(3) C = CLKRX low pulse width = P
D = CLKRX high pulse width = P

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M1, M11
M2, M12
M13
M3, M12

CLKR

M4 M4 M14
FSR (int)
M15
M16
FSR (ext)

M18
M17

DR Bit (n−1) (n−2) (n−3) (n−4)

(RDATDLY=00b)
M17
M18
DR Bit (n−1) (n−2) (n−3)
(RDATDLY=01b)
M17 M18
DR Bit (n−1) (n−2)
(RDATDLY=10b)

Figure 6-69. McBSP Receive Timing

M1, M11
M2, M12 M13
M3, M12

CLKX
M5 M5
FSX (int)
M19
M20
FSX (ext)
M9
M10 M7
DX
(XDATDLY=00b) Bit 0 Bit (n−1) (n−2) (n−3)

M7
M8
DX
(XDATDLY=01b) Bit 0 Bit (n−1) (n−2)

M6 M7
M8
DX
(XDATDLY=10b) Bit 0 Bit (n−1)

Figure 6-70. McBSP Transmit Timing

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6.12.3.1.2 McBSP as SPI Master or Slave Timing

Section 6.12.3.1.2.1 lists the McBSP as SPI master timing requirements. Section 6.12.3.1.2.2 lists the McBSP
as SPI master switching characteristics. Section 6.12.3.1.2.3 lists the McBSP as SPI slave timing requirements.
Section 6.12.3.1.2.4 lists the McBSP as SPI slave switching characteristics.
Figure 6-71 through Figure 6-74 show the McBSP as SPI master or slave timing diagrams.
6.12.3.1.2.1 McBSP as SPI Master Timing Requirements

NO. MIN MAX UNIT

CLOCK
tc(CLKG) Cycle time, CLKG(1) 2 * tc(LSPCLK) ns
P Cycle time, LSPCLK(1) tc(LSPCLK) ns
M33,
M42,
tc(CKX) Cycle time, CLKX 2P ns
M52,
M61
CLKSTP = 10b, CLKXP = 0
M30 tsu(DRV-CKXL) Setup time, DR valid before CLKX low 30 ns
M31 th(CKXL-DRV) Hold time, DR valid after CLKX low 1 ns
CLKSTP = 11b, CLKXP = 0
M39 tsu(DRV-CKXH) Setup time, DR valid before CLKX high 30 ns
M40 th(CKXH-DRV) Hold time, DR valid after CLKX high 1 ns
CLKSTP = 10b, CLKXP = 1
M49 tsu(DRV-CKXH) Setup time, DR valid before CLKX high 30 ns
M50 th(CKXH-DRV) Hold time, DR valid after CLKX high 1 ns
CLKSTP = 11b, CLKXP = 1
M58 tsu(DRV-CKXL) Setup time, DR valid before CLKX low 30 ns
M59 th(CKXL-DRV) Hold time, DR valid after CLKX low 1 ns

(1) CLKG should be configured to LSPCLK/2 by setting CLKSM = 1 and CLKGDV = 1

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6.12.3.1.2.2 McBSP as SPI Master Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
CLOCK
M33 tc(CLKG) Cycle time, CLKG(1) (n * tc(LSPCLK)) 40 ns
P Half CLKG cycle; 0.5 * tc(CLKG) 20 ns
n LSPCLK to CLKG divider 2 ns
CLKSTP = 10b, CLKXP = 0
M24 th(CKXL-FXL) Hold time, FSX high after CLKX low 2P – 6 ns
M25 td(FXL-CKXH) Delay time, FSX low to CLKX high P–6 ns
Delay time, CLKX high to DX valid [check clock polarity and
M26 td(CLKXH-DXV) –4 6 ns
add to timing diagram]
Disable time, DX high impedance following last data bit from
M28 tdis(FXH-DXHZ) P–8 ns
CLKX low [redefine timing diagram]
M29 td(FXL-DXV) Delay time, FSX low to DX valid P–3 P+6 ns
CLKSTP = 11b, CLKXP = 0
M34 th(CKXL-FXH) Hold time, FSX high after CLKX low P–6 ns
M35 td(FXL-CKXH) Delay time, FSX low to CLKX high P–6 ns
Delay time, CLKX low to DX valid [check clock polarity and add
M36 td(CLKXL-DXV) –4 6 ns
to timing diagram]
Disable time, DX high impedance following last data bit from
M37 tdis(CKXL-DXHZ) P–6 ns
CLKX low
M38 td(FXL-DXV) Delay time, FSX low to DX valid –2 1 ns
CLKSTP = 10b, CLKXP = 1
M43 th(CKXH-FXH) Hold time, FSX high after CLKX high 2P – 6 ns
M44 td(FXL-CKXL) Delay time, FSX low to CLKX low P–6 ns
Delay time, CLKX low to DX valid [check clock polarity and add
M45 td(CLKXL-DXV) –4 6 ns
to timing diagram]
Disable time, DX high impedance following last data bit from
M47 tdis(FXH-DXHZ) P–6 ns
CLKX low [redefine timing diagram]
M48 td(FXL-DXV) Delay time, FSX low to DX valid –2 1 ns
CLKSTP = 11b, CLKXP = 1
M53 th(CKXH-FXH) Hold time, FSX high after CLKX high P–6 ns
M54 td(FXL-CKXL) Delay time, FSX low to CLKX low 2P – 6 ns
M55 td(CLKXH-DXV) Delay time, CLKX high to DX valid –4 6 ns
Disable time, DX high impedance following last data bit from
M56 tdis(CKXH-DXHZ) P–8 ns
CLKX high
M57 td(FXL-DXV) Delay time, FSX low to DX valid –2 1 ns

(1) CLKG should be configured to LSPCLK/2 by setting CLKSM = 1 and CLKGDV = 1.

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6.12.3.1.2.3 McBSP as SPI Slave Timing Requirements

NO. MIN MAX UNIT
CLOCK
tc(CLKG) Cycle time, CLKG(1) 2 * tc(LSPCLK) ns
P Cycle time, LSPCLK(1) tc(LSPCLK) ns
M33,
M42,
tc(CKX) Cycle time, CLKX(2) 16P ns
M52,
M61
Worst skew between Clock and Data to ensure GBD for
na tskew(CKX-Data) ns
sampled clock and datas
CLKSTP = 10b, CLKXP = 0
M30 tsu(DRV-CKXL) Setup time, DR valid before CLKX low 8P – 10 ns
M31 th(CKXL-DRV) Hold time, DR valid after CLKX low 8P – 10 ns
M32 tsu(BFXL-CKXH) Setup time, FSX low before CLKX high 8P+10 ns
CLKSTP = 11b, CLKXP = 0
M39 tsu(DRV-CKXH) Setup time, DR valid before CLKX high 8P – 10 ns
M40 th(CKXH-DRV) Hold time, DR valid after CLKX high 8P – 10 ns
M41 tsu(FXL-CKXH) Setup time, FSX low before CLKX high 16P+10 ns
CLKSTP = 10b, CLKXP = 1
M49 tsu(DRV-CKXH) Setup time, DR valid before CLKX high 8P – 10 ns
M50 th(CKXH-DRV) Hold time, DR valid after CLKX high 8P – 10 ns
M51 tsu(FXL-CKXL) Setup time, FSX low before CLKX low 8P+10 ns
CLKSTP = 11b, CLKXP = 1
M58 tsu(DRV-CKXL) Setup time, DR valid before CLKX low 8P – 10 ns
M59 th(CKXL-DRV) Hold time, DR valid after CLKX low 8P – 10 ns
M60 tsu(FXL-CKXL) Setup time, FSX low before CLKX low 16P+10 ns

(1) CLKG should be configured to LSPCLK/2 by setting CLKSM = 1 and CLKGDV = 1

(2) For SPI slave modes CLKX must be a minimum of 8 CLKG cycles

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6.12.3.1.2.4 McBSP as SPI Slave Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
CLOCK
2P Cycle time, CLKG ns
CLKSTP = 10b, CLKXP = 0
M26 td(CLKXH-DXV) Delay time, CLKX high to DX valid 3P + 6 5P + 20 ns
Disable time, DX high impedance following last data bit from
M28 tdis(FXH-DXHZ) 6P + 6 ns
FSX high
M29 td(FXL-DXV) Delay time, FSX low to DX valid 4P + 6 ns
CLKSTP = 11b, CLKXP = 0
M36 td(CLKXL-DXV) Delay time, CLKX low to DX valid 3P + 6 5P + 20 ns
Disable time, DX high impedance following last data bit from
M37 tdis(CKXL-DXHZ) 7P + 6 ns
CLKX low
M38 td(FXL-DXV) Delay time, FSX low to DX valid 4P + 6 ns
CLKSTP = 10b, CLKXP = 1
M45 td(CLKXL-DXV) Delay time, CLKX low to DX valid 3P + 6 5P + 20 ns
Disable time, DX high impedance following last data bit from
M47 tdis(FXH-DXHZ) 6P + 6 ns
FSX high
M48 td(FXL-DXV) Delay time, FSX low to DX valid 4P + 6 ns
CLKSTP = 11b, CLKXP = 1
M55 td(CLKXH-DXV) Delay time, CLKX high to DX valid 3P + 6 5P + 20 ns
Disable time, DX high impedance following last data bit from
M56 tdis(CKXH-DXHZ) 7P + 6 ns
CLKX high
M57 td(FXL-DXV) Delay time, FSX low to DX valid 4P + 6 ns

LSB M32 MSB M33

CLKX

M24 M25
FSX

M28 M29 M26

DX Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

M30
M31

DR Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

Figure 6-71. McBSP Timing as SPI Master or Slave: CLKSTP = 10b, CLKXP = 0

MSB M42
LSB M41
CLKX

M34 M35
FSX

M37 M38 M36

DX Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

M39
M40

DR Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

Figure 6-72. McBSP Timing as SPI Master or Slave: CLKSTP = 11b, CLKXP = 0

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LSB M51 MSB M52

CLKX

M43 M44
FSX

M47 M48
M45

DX Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

M49
M50
DR Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

Figure 6-73. McBSP Timing as SPI Master or Slave: CLKSTP = 10b, CLKXP = 1

M60 MSB M61

LSB
CLKX

M53 M54
FSX

M56 M57 M55

DX Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

M58
M59
DR Bit 0 Bit(n-1) (n-2) (n-3) (n-4)

Figure 6-74. McBSP Timing as SPI Master or Slave: CLKSTP = 11b, CLKXP = 1

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6.12.4 Serial Communications Interface (SCI)

The SCI is a 2-wire asynchronous serial port, commonly known as a UART. The SCI module supports digital
communications between the CPU and other asynchronous peripherals that use the standard non-return-to-zero
(NRZ) format
The SCI receiver and transmitter each have a 16-level-deep FIFO for reducing servicing overhead, and each has
its own separate enable and interrupt bits. Both can be operated independently for half-duplex communication,
or simultaneously for full-duplex communication. To specify data integrity, the SCI checks received data for break
detection, parity, overrun, and framing errors. The bit rate is programmable to different speeds through a 16-bit
baud-select register. Figure 6-75 shows the SCI block diagram.
Features of the SCI module include:
• Two external pins:
– SCITXD: SCI transmit-output pin
– SCIRXD: SCI receive-input pin

Note
NOTE: Both pins can be used as GPIO if not used for SCI.
– Baud rate programmable to 64K different rates
• Data-word format
– One start bit
– Data-word length programmable from 1 to 8 bits
– Optional even/odd/no parity bit
– 1 or 2 stop bits
• Four error-detection flags: parity, overrun, framing, and break detection
• Two wakeup multiprocessor modes: idle-line and address bit
• Half- or full-duplex operation
• Double-buffered receive and transmit functions
• Transmitter and receiver operations can be accomplished through interrupt-driven or polled algorithms with
status flags.
– Transmitter: TXRDY flag (transmitter-buffer register is ready to receive another character) and TX EMPTY
flag (transmitter-shift register is empty)
– Receiver: RXRDY flag (receiver-buffer register is ready to receive another character), BRKDT flag (break
condition occurred), and RX ERROR flag (monitoring four interrupt conditions)
• Separate enable bits for transmitter and receiver interrupts (except BRKDT)
• NRZ format
• Auto baud-detect hardware logic
• 16-level transmit and receive FIFO

Note
All registers in this module are 8-bit registers. When a register is accessed, the register data is in the
lower byte (bits 7–0), and the upper byte (bits 15–8) is read as zeros. Writing to the upper byte has no
effect.

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TXENA
SCICTL1.1

TXSHF
SCITXD
Register

Frame 8
Format and Mode

Parity
Even/Odd TXEMPTY
0 1
SCICCR.6 8 SCICTL2.6

Enable
TX FIFO_0
TXINT
SCICCR.5 To CPU
TX FIFO_1 TX FIFO Interrupts TX Interrupt
88
Logic

TX FIFO_N
TXINTENA

TXRDY SCICTL2.0
8
TXWAKE 0 1 SCICTL2.7
SCICTL1.3

SCI TX Interrupt Select Logic

WUT 8

Transmit Data
Buffer Register
SCITXBUF.7-0 Auto Baud Detect Logic
RXENA
Baud Rate
MSB/LSB SCICTL1.0
LSPCLK Registers
RXSHF
SCIRXD
Register
SCIHBAUD.15-8
RXWAKE
SCILBAUD.7-0 8
SCIRXST.1

0 1
8

SCIFFENA
SCIFFTX.14 RX FIFO_0 RXINT
8 RX FIFO_1 To CPU
RX FIFO Interrupts RX Interrupt
Logic

RX FIFO_N
RXFFOVF
8 SCIFFRX.15
0 1
RXBKINTENA
SCICTL2.1
RXRDY
SCIRXST.6

RXENA BRKDT
RXERRINTENA
SCICTL1.0
SCIRXST.5 SCICTL1.6

SCI RX Interrupt Select Logic

SCIRXST.5-2
Receive Data BRKDT FE OE PE
Buffer Register
RXERROR
SCIRXBUF.7-0
SCIRXST.7

Figure 6-75. SCI Block Diagram

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The major elements used in full-duplex operation include:

• A transmitter (TX) and its major registers:
– SCITXBUF register – Transmitter Data Buffer register. Contains data (loaded by the CPU) to be
transmitted
– TXSHF register – Transmitter Shift register. Accepts data from the SCITXBUF register and shifts data onto
the SCITXD pin, 1 bit at a time
• A receiver (RX) and its major registers:
– RXSHF register – Receiver Shift register. Shifts data in from the SCIRXD pin, 1 bit at a time
– SCIRXBUF register – Receiver Data Buffer register. Contains data to be read by the CPU. Data from
a remote processor is loaded into the RXSHF register and then into the SCIRXBUF and SCIRXEMU
registers
• A programmable baud generator
• Data-memory-mapped control and status registers enable the CPU to access the I2C module registers and
FIFOs.
The SCI receiver and transmitter operate independently.

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6.12.5 Serial Peripheral Interface (SPI)

The SPI is a high-speed synchronous serial input/output (I/O) port that allows a serial bit stream of programmed
length (1 to 16 bits) to be shifted into and out of the device at a programmed bit-transfer rate. The SPI is
normally used for communications between the microcontroller and external peripherals or another controller.
Typical applications include external I/O or peripheral expansion through devices such as shift registers, display
drivers, and ADCs. Multidevice communications are supported by the master/slave operation of the SPI. The
port supports 16-level receive and transmit FIFOs for reducing CPU servicing overhead.
The SPI module features include:
• SPISOMI: SPI slave-output/master-input pin
• SPISIMO: SPI slave-input/master-output pin
• SPISTE: SPI slave transmit-enable pin
• SPICLK: SPI serial-clock pin
• Two operational modes: master and slave
• Baud rate: 125 different programmable rates
• Data word length: 1 to 16 data bits
• Four clocking schemes (controlled by clock polarity and clock phase bits) include:
– Falling edge without phase delay: SPICLK active-high. SPI transmits data on the falling edge of the
SPICLK signal and receives data on the rising edge of the SPICLK signal.
– Falling edge with phase delay: SPICLK active-high. SPI transmits data one half-cycle ahead of the falling
edge of the SPICLK signal and receives data on the falling edge of the SPICLK signal.
– Rising edge without phase delay: SPICLK inactive-low. SPI transmits data on the rising edge of the
SPICLK signal and receives data on the falling edge of the SPICLK signal.
– Rising edge with phase delay: SPICLK inactive-low. SPI transmits data one half-cycle ahead of the rising
edge of the SPICLK signal and receives data on the rising edge of the SPICLK signal.
• Simultaneous receive-and-transmit operation (transmit function can be disabled in software)
• Transmitter and receiver operations are accomplished through either interrupt-driven or polled algorithms.
• 16-level transmit and receive FIFO
• Delayed transmit control
• 3-wire SPI mode
• SPISTE inversion for digital audio interface receive mode on devices with two SPI modules
• DMA support
• High-speed mode for up to 50-MHz full-duplex communication
The SPI operates in master or slave mode. The master initiates data transfer by sending the SPICLK signal. For
both the slave and the master, data is shifted out of the shift registers on one edge of the SPICLK and latched
into the shift register on the opposite SPICLK clock edge. If the CLOCK PHASE bit (SPICTL.3) is high, data is
transmitted and received a half-cycle before the SPICLK transition. As a result, both controllers send and receive
data simultaneously. The application software determines whether the data is meaningful or dummy data. There
are three possible methods for data transmission:
• Master sends data; slave sends dummy data
• Master sends data; slave sends data
• Master sends dummy data; slave sends data
The master can initiate a data transfer at any time because it controls the SPICLK signal. The software,
however, determines how the master detects when the slave is ready to broadcast data.

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Figure 6-76 shows the SPI CPU Interface.

PCLKCR8
Low-Speed
LSPCLK
Prescaler
SYSCLK CPU

Bit

Peripheral Bus
Clock
SYSRS

SPISIMO
GPIO SPISOMI
MUX SPICLK
SPI SPIINT
SPITXINT PIE
SPISTE

SPIRXDMA
SPITXDMA DMA

Figure 6-76. SPI CPU Interface

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6.12.5.1 SPI Electrical Data and Timing

Note
All timing parameters for SPI High-Speed Mode assume a load capacitance of 5 pF on SPICLK,
SPISIMO, and SPISOMI.

For more information about the SPI in High-Speed mode, see the Serial Peripheral Interface (SPI) chapter of the
TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual .
To use the SPI in High-Speed mode, the application must use the high-speed enabled GPIOs (see Section
5.4.5).
6.12.5.1.1 SPI Master Mode Timings
Section 6.12.5.1.1.1 lists the SPI master mode timing requirements. Section 6.12.5.1.1.2 lists the SPI master
mode switching characteristics (clock phase = 0). Section 6.12.5.1.1.3 lists the SPI master mode switching
characteristics (clock phase = 1). Figure 6-77 shows the SPI master mode external timing where the clock phase
= 0. Figure 6-78 shows the SPI master mode external timing where the clock phase = 1.
6.12.5.1.1.1 SPI Master Mode Timing Requirements

(BRR + 1)
NO. MIN MAX UNIT
CONDITION(1)
High Speed Mode
Setup time, SPISOMI valid before
8 tsu(SOMI)M Even, Odd 1 ns
SPICLK
Hold time, SPISOMI valid after
9 th(SOMI)M Even, Odd 5 ns
SPICLK
Normal Mode
Setup time, SPISOMI valid before
8 tsu(SOMI)M Even, Odd 20 ns
SPICLK
Hold time, SPISOMI valid after
9 th(SOMI)M Even, Odd 0 ns
SPICLK

(1) The (BRR + 1) condition is Even when (SPIBRR + 1) is even or SPIBRR is 0 or 2. It is Odd when (SPIBRR + 1) is odd and SPIBRR is
greater than 3.

6.12.5.1.1.2 SPI Master Mode Switching Characteristics (Clock Phase = 0)

over recommended operating conditions (unless otherwise noted)
(BRR + 1)
NO. PARAMETER MIN MAX UNIT
CONDITION(1)
General
Even 4tc(LSPCLK) 128tc(LSPCLK)
1 tc(SPC)M Cycle time, SPICLK ns
Odd 5tc(LSPCLK) 127tc(LSPCLK)
Even 0.5tc(SPC)M – 1 0.5tc(SPC)M + 1
2 tw(SPC1)M Pulse duration, SPICLK, first pulse 0.5tc(SPC)M +0.5tc(LSPCLK) 0.5tc(SPC)M +0.5tc(LSPCLK) ns
Odd
–1 +1
Even 0.5tc(SPC)M – 1 0.5tc(SPC)M + 1
Pulse duration, SPICLK, second
3 tw(SPC2)M 0.5tc(SPC)M –0.5tc(LSPCLK) – 0.5tc(SPC)M –0.5tc(LSPCLK) ns
pulse Odd
1 +1
1.5tc(SPC)M - 3tc(SYSCLK) – 1.5tc(SPC)M - 3tc(SYSCLK) +
Even
7 5
23 td(SPC)M Delay time, SPISTE active to SPICLK ns
1.5tc(SPC)M - 4tc(SYSCLK) – 1.5tc(SPC)M - 4tc(SYSCLK) +
Odd
7 5

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6.12.5.1.1.2 SPI Master Mode Switching Characteristics (Clock Phase = 0) (continued)

over recommended operating conditions (unless otherwise noted)
(BRR + 1)
NO. PARAMETER MIN MAX UNIT
CONDITION(1)
Even 0.5tc(SPC)M – 7 0.5tc(SPC)M + 5
Valid time, SPICLK to SPISTE
24 tv(STE)M 0.5tc(SPC)M –0.5tc(LSPCLK) – 0.5tc(SPC)M –0.5tc(LSPCLK) ns
inactive Odd
7 +5
High Speed Mode
4 td(SIMO)M Delay time, SPICLK to SPISIMO valid Even, Odd 1 ns
Even 0.5tc(SPC)M – 2
Valid time, SPISIMO valid after
5 tv(SIMO)M 0.5tc(SPC)M –0.5tc(LSPCLK) – ns
SPICLK Odd
2
Normal Mode
4 td(SIMO)M Delay time, SPICLK to SPISIMO valid Even, Odd 6 ns
Even 0.5tc(SPC)M – 5
Valid time, SPISIMO valid after
5 tv(SIMO)M 0.5tc(SPC)M –0.5tc(LSPCLK) – ns
SPICLK Odd
5

(1) The (BRR + 1) condition is Even when (SPIBRR + 1) is even or SPIBRR is 0 or 2. It is Odd when (SPIBRR + 1) is odd and SPIBRR is
greater than 3.

6.12.5.1.1.3 SPI Master Mode Switching Characteristics (Clock Phase = 1)

over recommended operating conditions (unless otherwise noted)
(BRR + 1)
NO. PARAMETER MIN MAX UNIT
CONDITION(1)
General
Even 4tc(LSPCLK) 128tc(LSPCLK)
1 tc(SPC)M Cycle time, SPICLK ns
Odd 5tc(LSPCLK) 127tc(LSPCLK)
Even 0.5tc(SPC)M – 1 0.5tc(SPC)M + 1
Pulse duration, SPICLK, first
2 tw(SPCH)M 0.5tc(SPC)M – ns
pulse Odd 0.5tc(SPC)M – 0.5tc(LSPCLK) – 1
0.5tc(LSPCLK) + 1
Even 0.5tc(SPC)M – 1 0.5tc(SPC)M + 1
Pulse duration, SPICLK,
3 tw(SPC2)M 0.5tc(SPC)M + ns
second pulse Odd 0.5tc(SPC)M + 0.5tc(LSPCLK) – 1
0.5tc(LSPCLK) + 1
Delay time, SPISTE valid to 2tc(SPC)M –
23 td(SPC)M Even, Odd 2tc(SPC)M – 3tc(SYSCLK) – 7 ns
SPICLK 3tc(SYSCLK) + 5

Valid time, SPICLK to SPISTE Even –7 +5

24 tv(STE)M ns
invalid Odd –7 +5
High Speed Mode

Delay time, SPISIMO valid to Even 0.5tc(SPC)M – 1

4 td(SIMO)M ns
SPICLK Odd 0.5tc(SPC)M + 0.5tc(LSPCLK) – 1

Valid time, SPISIMO valid after Even 0.5tc(SPC)M – 2

5 tv(SIMO)M ns
SPICLK Odd 0.5tc(SPC)M – 0.5tc(LSPCLK) – 2
Normal Mode

Delay time, SPISIMO valid to Even 0.5tc(SPC)M – 5

4 td(SIMO)M ns
SPICLK Odd 0.5tc(SPC)M + 0.5tc(LSPCLK) – 5

Valid time, SPISIMO valid after Even 0.5tc(SPC)M – 5

5 tv(SIMO)M ns
SPICLK Odd 0.5tc(SPC)M – 0.5tc(LSPCLK) – 5

(1) The (BRR + 1) condition is Even when (SPIBRR + 1) is even or SPIBRR is 0 or 2. It is Odd when (SPIBRR + 1) is odd and SPIBRR is
greater than 3.

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SPICLK
(clock polarity = 0)

SPICLK
(clock polarity = 1)

4
5

SPISIMO Master Out Data Is Valid

Master In Data
SPISOMI
Must Be Valid

23 24

(A)
SPISTE

A. On the trailing end of the word, SPISTE will go inactive except between back-to-back transmit words in both FIFO and non-FIFO
modes.

Figure 6-77. SPI Master Mode External Timing (Clock Phase = 0)

1
SPICLK
(clock polarity = 0)
2

SPICLK
(clock polarity = 1)
4
5

SPISIMO Master Out Data Is Valid

SPISOMI Master In Data Must

Be Valid
24
(A) 23
SPISTE

A. On the trailing end of the word, SPISTE will go inactive except between back-to-back transmit words in both FIFO and non-FIFO
modes.

Figure 6-78. SPI Master Mode External Timing (Clock Phase = 1)

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6.12.5.1.2 SPI Slave Mode Timings

Section 6.12.5.1.2.1 lists the SPI slave mode timing requirements. Section 6.12.5.1.2.2 lists the SPI slave mode
switching characteristics. Figure 6-79 shows the SPI slave mode external timing where the clock phase = 0.
Figure 6-80 shows the SPI slave mode external timing where the clock phase = 1.
6.12.5.1.2.1 SPI Slave Mode Timing Requirements

NO. MIN MAX UNIT

12 tc(SPC)S Cycle time, SPICLK 4tc(SYSCLK) ns
13 tw(SPC1)S Pulse duration, SPICLK, first pulse 2tc(SYSCLK) – 1 ns
14 tw(SPC2)S Pulse duration, SPICLK, second pulse 2tc(SYSCLK) – 1 ns
19 tsu(SIMO)S Setup time, SPISIMO valid before SPICLK 1.5tc(SYSCLK) ns
20 th(SIMO)S Hold time, SPISIMO valid after SPICLK 1.5tc(SYSCLK) ns
Setup time, SPISTE valid before
2tc(SYSCLK) + 4 ns
SPICLK (Clock Phase = 0)
25 tsu(STE)S
Setup time, SPISTE valid before
2tc(SYSCLK) + 14 ns
SPICLK (Clock Phase = 1)
26 th(STE)S Hold time, SPISTE invalid after SPICLK 1.5tc(SYSCLK) ns

6.12.5.1.2.2 SPI Slave Mode Switching Characteristics

over recommended operating conditions (unless otherwise noted)
NO. PARAMETER MIN MAX UNIT
High Speed Mode
15 td(SOMI)S Delay time, SPICLK to SPISOMI valid 9 ns
16 tv(SOMI)S Valid time, SPISOMI valid after SPICLK 0 ns
Normal Mode
15 td(SOMI)S Delay time, SPICLK to SPISOMI valid 20 ns
16 tv(SOMI)S Valid time, SPISOMI valid after SPICLK 0 ns

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SPICLK
(clock polarity = 0)

SPICLK
(clock polarity = 1)

15
16

SPISOMI SPISOMI Data Is Valid

SPISIMO Data
SPISIMO
Must Be Valid

25 26

SPISTE

Figure 6-79. SPI Slave Mode External Timing (Clock Phase = 0)

SPICLK
(clock polarity = 0)

13 14

SPICLK
(clock polarity = 1)

SPISOMI SPISOMI Data Is Valid Data Valid Data Valid

19 16

SPISIMO SPISIMO Data

Must Be Valid

25 26

SPISTE

Figure 6-80. SPI Slave Mode External Timing (Clock Phase = 1)

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6.12.6 Universal Serial Bus (USB) Controller

The USB controller operates as a full-speed or low-speed function controller during point-to-point
communications with USB host or device functions.
The USB module has the following features:
• USB 2.0 full-speed and low-speed operation
• Integrated PHY
• Three transfer types: control, interrupt, and bulk
• 32 endpoints
– One dedicated control IN endpoint and one dedicated control OUT endpoint
– 15 configurable IN endpoints and 15 configurable OUT endpoints
• 4KB of dedicated endpoint memory
Figure 6-81 shows the USB block diagram.

Endpoint Control

Transmit
EP0 –31
Control
Receive
CPU Interface
Interrupt Interrupts
Host
Combine Control
Transaction
Endpoints
Scheduler
EP Reg.
Decoder

Common CPU Bus

UTM Packet FIFO RAM
Synchronization Encode/Decode Controller Regs
Rx Rx
Data Sync Packet Encode
Buff Buff Cycle
Control
HNP/SRP Packet Decode Tx Tx
Buff Buff
USB FS/LS
PHY FIFO
Timers CRC Gen/Check Cycle Control
Decoder
USB DataLines
D+ andD-

Figure 6-81. USB Block Diagram

Note
The accuracy of the on-chip zero-pin oscillator (Section 6.9.3.5.1, Internal Oscillator Electrical
Characteristics) will not meet the accuracy requirements of the USB protocol. An external clock source
must be used for applications using USB. For applications using the USB boot mode, see Section
7.10 (Boot ROM and Peripheral Booting) for clock frequency requirements.

178 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

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6.12.6.1 USB Electrical Data and Timing

Section 6.12.6.1.1 shows the USB input ports DP and DM timing requirements. Section 6.12.6.1.2 shows the
USB output ports DP and DM switching characteristics.
6.12.6.1.1 USB Input Ports DP and DM Timing Requirements

MIN MAX UNIT

V(CM) Differential input common mode range 0.8 2.5 V
Z(IN) Input impedance 300 kΩ
VCRS Crossover voltage 1.3 2.0 V
VIL Static SE input logic-low level 0.8 V
VIH Static SE input logic-high level 2.0 V
VDI Differential input voltage 0.2 V

6.12.6.1.2 USB Output Ports DP and DM Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
VOH D+, D– single-ended USB 2.0 load conditions 2.8 3.6 V
VOL D+, D– single-ended USB 2.0 load conditions 0 0.3 V
Z(DRV) D+, D– impedance 28 44 Ω
Full speed, differential, CL = 50 pF, 10%/90%,
tr Rise time 4 20 ns
Rpu on D+
Full speed, differential, CL = 50 pF, 10%/90%,
tf Fall time 4 20 ns
Rpu on D+

6.12.7 Universal Parallel Port (uPP) Interface

The uPP interface is a high-speed parallel interface with dedicated data lines and minimal control signals. The
uPP interface is designed to interface cleanly with high-speed ADCs or DACs with 8-bit data width. It can also be
interconnected with field-programmable gate arrays (FPGAs) or other uPP devices to achieve high-speed digital
data transfer. It can operate in receive mode or transmit mode (simplex mode).
The uPP interface includes an internal DMA controller to maximize throughput and minimize CPU overhead
during high-speed data transmission. All uPP transactions use internal DMA to feed data to or retrieve data from
the I/O channels. Even though there is only one I/O channel, the DMA controller includes two DMA channels to
support data interleave mode, in which all DMA resources service a single I/O channel.
On this device, the uPP interface is the dedicated resource for the CPU1 subsystem. CPU1, CPU1.CLA1, and
CPU1.DMA have access to this module. Two dedicated 512-byte data RAMs (also known as MSG RAMs) are
tightly coupled with the uPP module (one for each, TX and RX). These data RAMs are used to store the bulk of
data to avoid frequent interruptions to the CPU. Only CPU1 and CPU1.CLA1 have access to these data RAMs.
Figure 6-82 shows the integration of the uPP on this device.

CPU1 RX-DATARAM
Arbi READ
512 Byte
Arbiter Y
(Dual Port
t Memory)
CPU1.CLA1

uPP DMA WRITE

CPU1

I/O Interface
Arbi uPP
Arbiter X
(Universal
CPU1.CLA1 0 t Parallel Port)

CPU1.DMA 1
uPP DMA READ

SECMSEL.PF2SEL

CPU1 TX-DATARAM
Arbi WRITE
512 Byte
Arbiter Y
(Dual Port
t Memory)
CPU1.CLA1

Figure 6-82. uPP Integration

Note
On some TI devices, the uPP module is also called the Radio Peripheral Interface (RPI) module.

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

The uPP interface supports the following:

• Mainstream high-speed data converters with parallel conversion interface.
• Mainstream high-speed streaming interface with frame START indication.
• Mainstream high-speed streaming interface with data ENABLE indication.
• Mainstream high-speed streaming interface with synchronization WAIT signal.
• SDR (single-data-rate) or DDR (double-data-rate, interleaved) interface.
• Multiplexing of interleaved data in SDR transmit case.
• Demultiplexing and multiplexing of interleaved data in DDR case.
• I/O interface clock frequency up to 50 MHz for SDR, and 25 MHz for DDR.
• Single-channel 8-bit input receive or output transmit mode.
• Max throughput is 50MB/s for pure read or pure write.
• Available as a DSP to FPGA general-purpose streaming interface.
Figure 6-83 shows the uPP functional block diagram.

uPP

Configuration ENABLE OUT G

MMR ENABLE/GPIOx
I/F
Transmit Timing START OUT P
and Control I
WAIT IN
O
CLK OUT START/GPIOx
CPU1.SYSCLK CLKDIVIDER
M
CLK IN
U
ENABLE IN WAIT/GPIOx
X
Receive Timing
Interrupt/Trigger Control Mux START IN
and Control
WAIT OUT and
CLK/GPIOx
I/O

Arbi
I-FIFO C
64 Bit t O
MEM WR I/F DATA OUT N
DATA[7:0]/GPIOx
Internal Data Interleaving T
DMA
Arbit (TX/RX) DATA IN
R
O
64 Bit
L
MEM RD I/F Arbi
Q-FIFO

Figure 6-83. uPP Functional Block Diagram

6.12.7.1 uPP Electrical Data and Timing

Section 6.12.7.1.1 shows the uPP timing requirements. Section 6.12.7.1.2 shows the uPP switching
characteristics. Figure 6-84 through Figure 6-87 show the uPP timing diagrams.
6.12.7.1.1 uPP Timing Requirements

NO. MIN MAX UNIT

SDR mode 20
1 tc(CLK) Cycle time, CLK ns
DDR mode 40
SDR mode 8
2 tw(CLKH) Pulse width, CLK high ns
DDR mode 18
SDR mode 8
3 tw(CLKL) Pulse width, CLK low ns
DDR mode 18
4 tsu(STV-CLKH) Setup time, START valid before CLK high 4 ns
5 th(CLKH-STV) Hold time, START valid after CLK high 0.8 ns
6 tsu(ENV-CLKH) Setup time, ENABLE valid before CLK high 4 ns
7 th(CLKH-ENV) Hold time, ENABLE valid after CLK high 0.8 ns
8 tsu(DV-CLKH) Setup time, DATA valid before CLK high 4 ns
9 th(CLKH-DV) Hold time, DATA valid after CLK high 0.8 ns
10 tsu(DV-CLKL) Setup time, DATA valid before CLK low 4 ns
11 th(CLKL-DV) Hold time, DATA valid after CLK low 0.8 ns
19 tsu(WTV-CLKH) Setup time, WAIT valid before CLK high SDR mode 20 ns
20 th(CLKH-WTV) Hold time, WAIT valid after CLK high SDR mode 0 ns
21 tsu(WTV-CLKL) Setup time, WAIT valid before CLK low DDR mode 20 ns
22 th(CLKL-WTV) Hold time, WAIT valid after CLK low DDR mode 0 ns

6.12.7.1.2 uPP Switching Characteristics

over recommended operating conditions (unless otherwise noted)
NO. PARAMETER MIN MAX UNIT
SDR mode 20
12 tc(CLK) Cycle time, CLK ns
DDR mode 40
SDR mode 8
13 tw(CLKH) Pulse width, CLK high ns
DDR mode 18
SDR mode 8
14 tw(CLKL) Pulse width, CLK low ns
DDR mode 18
15 td(CLKH-STV) Delay time, START valid after CLK high 3 12 ns
16 td(CLKH-ENV) Delay time, ENABLE valid after CLK high 3 12 ns
17 td(CLKH-DV) Delay time, DATA valid after CLK high 3 12 ns
18 td(CLKL-DV) Delay time, DATA valid after CLK low 3 12 ns

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1 2 3
CLK
4
5
START
6
7
ENABLE

WAIT
8
9
DATA[n:0] Data1 Data2 Data3 Data4 Data5 Data6 Data7 Data8 Data9

Figure 6-84. uPP Single Data Rate (SDR) Receive Timing

1 2 3
CLK
4
5
START
6
7
ENABLE

WAIT

8 10
9 11
DATA[n:0] I1 Q1 I2 Q2 I3 Q3 I4 Q4 I5 Q5 I6 Q6 I7 Q7 I8 Q8 I9 Q9

Figure 6-85. uPP Double Data Rate (DDR) Receive Timing

12 13 14
CLK

15
START

16
ENABLE

19 20
WAIT

17
DATA[n:0] Data1 Data2 Data3 Data4 Data5 Data6 Data7 Data8 Data9

Figure 6-86. uPP Single Data Rate (SDR) Transmit Timing

12 13 14
CLK

15
START

16
ENABLE
21
22
WAIT

17 18
DATA[n:0] I1 Q1 I2 Q2 I3 Q3 I4 Q4 I5 Q5 I6 Q6 I7 Q7 I8 Q8 I9 Q9

Figure 6-87. uPP Double Data Rate (DDR) Transmit Timing

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7 Detailed Description
7.1 Overview
The TMS320F2837xD is a powerful 32-bit floating-point microcontroller unit (MCU) designed for advanced
closed-loop control applications such as industrial motor drives; solar inverters and digital power; electrical
vehicles and transportation; and sensing and signal processing. Complete development packages for digital
power and industrial drives are available as part of the powerSUITE and DesignDRIVE initiatives. The F2837xD
supports a new dual-core C28x architecture that significantly boosts system performance. The integrated analog
and control peripherals also let designers consolidate control architectures and eliminate multiprocessor use in
high-end systems.
The dual real-time control subsystems are based on TI’s 32-bit C28x floating-point CPUs, which provide
200 MHz of signal processing performance in each core. The C28x CPUs are further boosted by the new TMU
accelerator, which enables fast execution of algorithms with trigonometric operations common in transforms and
torque loop calculations; and the VCU accelerator, which reduces the time for complex math operations common
in encoded applications.
The F2837xD microcontroller family features two CLA real-time control coprocessors. The CLA is an
independent 32-bit floating-point processor that runs at the same speed as the main CPU. The CLA responds to
peripheral triggers and executes code concurrently with the main C28x CPU. This parallel processing capability
can effectively double the computational performance of a real-time control system. By using the CLA to
service time-critical functions, the main C28x CPU is free to perform other tasks, such as communications and
diagnostics. The dual C28x+CLA architecture enables intelligent partitioning between various system tasks. For
example, one C28x+CLA core can be used to track speed and position, while the other C28x+CLA core can be
used to control torque and current loops.
The TMS320F2837xD supports up to 1MB (512KW) of onboard flash memory with error correction code (ECC)
and up to 204KB (102KW) of SRAM. Two 128-bit secure zones are also available on each CPU for code
protection.
Performance analog and control peripherals are also integrated on the F2837xD MCU to further enable
system consolidation. Four independent 16-bit ADCs provide precise and efficient management of multiple
analog signals, which ultimately boosts system throughput. The new sigma-delta filter module (SDFM) works
in conjunction with the sigma-delta modulator to enable isolated current shunt measurements. The Comparator
Subsystem (CMPSS) with windowed comparators allows for protection of power stages when current limit
conditions are exceeded or not met. Other analog and control peripherals include DACs, PWMs, eCAPs,
eQEPs, and other peripherals.
Peripherals such as EMIFs, CAN modules (ISO 11898-1/CAN 2.0B-compliant), and a new uPP interface extend
the connectivity of the F2837xD. The uPP interface is a new feature of the C2000 MCUs and supports high-
speed parallel connection to FPGAs or other processors with similar uPP interfaces. Lastly, a USB 2.0 port with
MAC and PHY lets users easily add universal serial bus (USB) connectivity to their application.
Want to learn more about features that make C2000 Real-Time MCUs the right choice for your real-time control
system? Check out The Essential Guide for Developing With C2000™ Real-Time Microcontrollers and visit the
C2000™ real-time control MCUs page.
The Getting Started With C2000™ Real-Time Control Microcontrollers (MCUs) Getting Started Guide covers all
aspects of development with C2000 devices from hardware to support resources. In addition to key reference
documents, each section provides relevant links and resources to further expand on the information covered.
Ready to get started? Check out the TMDSCNCD28379D or LAUNCHXL-F28379D evaluation boards and
download C2000Ware.

7.2 Functional Block Diagram

Figure 7-1 shows the CPU system and associated peripherals.
User User
Configurable Configurable
Dual PSWD DCSM DCSM PSWD Dual
Code OTP OTP Code
Security 1K x 16 1K x 16 Security
Module Module
+ +
Emulation
FLASH FLASH Emulation
Secure Memories Code 256K x 16 256K x 16 Code
Secure Secure
shown in Red Security Security
Logic Logic CPU2.CLA1
(ECSL) PUMP (ECSL)
OTP/Flash OTP/Flash
Wrapper Wrapper

CPU2.CLA1 Bus
CPU1.CLA1 Bus

D5:0 JTAG TDI

TMS
ADCIN14
Data Bus TDO
ADCIN15 Bridge CPU1.DMA CPU2.DMA

Comparator
DAC CPU1 Buses
Subsystem
(CMPSS) x3
CPU2 Buses

Data Bus Data Bus Data Bus Data Bus Data Bus
Peripheral Frame 1 Data Bus Bridge Bridge Bridge Peripheral Frame 2 Bridge Bridge Bridge

ePWM-1/../12 SCI- USB CAN- SPI- RAM

eCAP- I2C-A/B McBSP-
eQEP-1/2/3 SDFM-1/2 A/B/C/D Ctrl / A/B A/B/C uPP EMIF1 EMIF2 GPIO
HRPWM-1/../8 1/../6 (16L FIFO) A/B
(16L FIFO) PHY (32-MBOX) (16L FIFO)
(CPU1 only)
EXTSYNCOUT

UPPAD[7:0]
EPWMxB
EPWMxA

SCITXDx

CANTXx

UPPACLK
SPISIMOx
SPISOMIx

EM1CTLx

EM2CTLx
SPICLKx

UPPAWT
MCLKRx

UPPAEN
MCLKXx
EQEPxS

SPISTEx

UPPAST
EXTSYNCIN

USBDM
SDx_Dy

SDx_Cy
EQEPxI

MDXx
USBDP

MFSRx
SCIRXDx

MFSXx

EM1Dx
EM1Ax

EM2Dx
EM2Ax
CANRXx

GPIOn
EQEPxB
ECAPx

EQEPxA
TZ1-TZ6

MDRx
SDAx

SCLx

GPIO MUX, Input X-BAR, Output X-BAR

Figure 7-1. Functional Block Diagram

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7.3 Memory
7.3.1 C28x Memory Map
Both C28x CPUs on the device have the same memory map except where noted in Table 7-1. The GSx_RAM
(Global Shared RAM) should be assigned to either CPU by the GSxMSEL register. Memories accessible by the
CLA or DMA (direct memory access) are noted as well.
Table 7-1. C28x Memory Map
MEMORY SIZE START ADDRESS END ADDRESS CLA ACCESS DMA ACCESS
M0 RAM 1K × 16 0x0000 0000 0x0000 03FF
M1 RAM 1K × 16 0x0000 0400 0x0000 07FF
PieVectTable 512 × 16 0x0000 0D00 0x0000 0EFF
CPUx.CLA1 to CPUx MSGRAM 128 × 16 0x0000 1480 0x0000 14FF Yes
CPUx to CPUx.CLA1 MSGRAM 128 × 16 0x0000 1500 0x0000 157F Yes
Yes
UPP TX MSG RAM 512 × 16 0x0000 6C00 0x0000 6DFF
(CPU1.CLA1 only)
Yes
UPP RX MSG RAM 512 × 16 0x0000 6E00 0x0000 6FFF
(CPU1.CLA1 only)
LS0 RAM 2K × 16 0x0000 8000 0x0000 87FF Yes
LS1 RAM 2K × 16 0x0000 8800 0x0000 8FFF Yes
LS2 RAM 2K × 16 0x0000 9000 0x0000 97FF Yes
LS3 RAM 2K × 16 0x0000 9800 0x0000 9FFF Yes
LS4 RAM 2K × 16 0x0000 A000 0x0000 A7FF Yes
LS5 RAM 2K × 16 0x0000 A800 0x0000 AFFF Yes
D0 RAM 2K × 16 0x0000 B000 0x0000 B7FF
D1 RAM 2K × 16 0x0000 B800 0x0000 BFFF
GS0 RAM(1) 4K × 16 0x0000 C000 0x0000 CFFF Yes
GS1 RAM(1) 4K × 16 0x0000 D000 0x0000 DFFF Yes
GS2 RAM(1) 4K × 16 0x0000 E000 0x0000 EFFF Yes
GS3 RAM(1) 4K × 16 0x0000 F000 0x0000 FFFF Yes
GS4 RAM(1) 4K × 16 0x0001 0000 0x0001 0FFF Yes
GS5 RAM(1) 4K × 16 0x0001 1000 0x0001 1FFF Yes
GS6 RAM(1) 4K × 16 0x0001 2000 0x0001 2FFF Yes
GS7 RAM(1) 4K × 16 0x0001 3000 0x0001 3FFF Yes
GS8 RAM(1) 4K × 16 0x0001 4000 0x0001 4FFF Yes
GS9 RAM(1) 4K × 16 0x0001 5000 0x0001 5FFF Yes
GS10 RAM(1) 4K × 16 0x0001 6000 0x0001 6FFF Yes
GS11 RAM(1) 4K × 16 0x0001 7000 0x0001 7FFF Yes
GS12 RAM(1) (2) 4K × 16 0x0001 8000 0x0001 8FFF Yes
GS13 RAM(1) (2) 4K × 16 0x0001 9000 0x0001 9FFF Yes
GS14 RAM(1) (2) 4K × 16 0x0001 A000 0x0001 AFFF Yes
GS15 RAM(1) (2) 4K × 16 0x0001 B000 0x0001 BFFF Yes
CPU2 to CPU1 MSGRAM(1) 1K × 16 0x0003 F800 0x0003 FBFF Yes
CPU1 to CPU2 MSGRAM(1) 1K × 16 0x0003 FC00 0x0003 FFFF Yes
CAN A Message RAM(1) 2K × 16 0x0004 9000 0x0004 97FF
CAN B Message RAM(1) 2K × 16 0x0004 B000 0x0004 B7FF
Flash 256K × 16 0x0008 0000 0x000B FFFF
Secure ROM 32K × 16 0x003F 0000 0x003F 7FFF
Boot ROM 32K × 16 0x003F 8000 0x003F FFBF
Vectors 64 × 16 0x003F FFC0 0x003F FFFF

(1) Shared between CPU subsystems.

(2) Available only on F28379D, F28378D, F28377D, and F28375D.

7.3.2 Flash Memory Map

On the F28379D, F28378D, F28377D, and F28375D devices, each CPU has its own flash bank [512KB
(256KW)], the total flash for each device is 1MB (512KW). Only one bank can be programmed or erased at
a time and the code to program the flash should be executed out of RAM. The following table shows the
addresses of flash sectors on CPU1 and CPU2 for F28379D, F28378D, F28377D, and F28375D.
Table 7-2. Addresses of Flash Sectors on CPU1 and CPU2 for F28379D, F28378D, F28377D and F28375D
SECTOR SIZE START ADDRESS END ADDRESS

OTP Sectors

TI OTP 1K x 16 0x0007 0000 0x0007 03FF

User configurable DCSM OTP 1K x 16 0x0007 8000 0x0007 83FF

Sectors

Sector 0 8K x 16 0x0008 0000 0x0008 1FFF

Sector 1 8K x 16 0x0008 2000 0x0008 3FFF

Sector 2 8K x 16 0x0008 4000 0x0008 5FFF

Sector 3 8K x 16 0x0008 6000 0x0008 7FFF

Sector 4 32K x 16 0x0008 8000 0x0008 FFFF

Sector 5 32K x 16 0x0009 0000 0x0009 7FFF

Sector 6 32K x 16 0x0009 8000 0x0009 FFFF

Sector 7 32K x 16 0x000A 0000 0x000A 7FFF

Sector 8 32K x 16 0x000A 8000 0x000A FFFF

Sector 9 32K x 16 0x000B 0000 0x000B 7FFF

Sector 10 8K x 16 0x000B 8000 0x000B 9FFF

Sector 11 8K x 16 0x000B A000 0x000B BFFF

Sector 12 8K x 16 0x000B C000 0x000B DFFF

Sector 13 8K x 16 0x000B E000 0x000B FFFF

Flash ECC Locations

TI OTP ECC 128 x 16 0x0107 0000 0x0107 007F

User-configurable DCSM OTP

128 x 16 0x0107 1000 0x0107 107F
ECC

Flash ECC (Sector 0) 1K x 16 0x0108 0000 0x0108 03FF

Flash ECC (Sector 1) 1K x 16 0x0108 0400 0x0108 07FF

Flash ECC (Sector 2) 1K x 16 0x0108 0800 0x0108 0BFF

Flash ECC (Sector 3) 1K x 16 0x0108 0C00 0x0108 0FFF

Flash ECC (Sector 4) 4K x 16 0x0108 1000 0x0108 1FFF

Flash ECC (Sector 5) 4K x 16 0x0108 2000 0x0108 2FFF

Flash ECC (Sector 6) 4K x 16 0x0108 3000 0x0108 3FFF

Flash ECC (Sector 7) 4K x 16 0x0108 4000 0x0108 4FFF

Flash ECC (Sector 8) 4K x 16 0x0108 5000 0x0108 5FFF

Flash ECC (Sector 9) 4K x 16 0x0108 6000 0x0108 6FFF

Flash ECC (Sector 10) 1K x 16 0x0108 7000 0x0108 73FF

Flash ECC (Sector 11) 1K x 16 0x0108 7400 0x0108 77FF

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

Table 7-2. Addresses of Flash Sectors on CPU1 and CPU2 for F28379D, F28378D, F28377D and F28375D
(continued)
SECTOR SIZE START ADDRESS END ADDRESS

Flash ECC (Sector 12) 1K x 16 0x0108 7800 0x0108 7BFF

Flash ECC (Sector 13) 1K x 16 0x0108 7C00 0x0108 7FFF

On the F28376D and F28374D devices, each CPU has its own flash bank [256KB (128KW)], the total flash for
each device is 512KB (256KW). Only one bank can be programmed or erased at a time and the code to program
the flash should be executed out of RAM. The following table shows the addresses of flash sectors on CPU1 and
CPU2 for F28376D and F28374D.
Table 7-3. Addresses of Flash Sectors on CPU1 and CPU2 for F28376D and F28374D
SECTOR SIZE START ADDRESS END ADDRESS

OTP Sectors

TI OTP 1K x 16 0x0007 0000 0x0007 03FF

User configurable DCSM OTP 1K x 16 0x0007 8000 0x0007 83FF

Sectors

Sector 0 8K x 16 0x0008 0000 0x0008 1FFF

Sector 1 8K x 16 0x0008 2000 0x0008 3FFF

Sector 2 8K x 16 0x0008 4000 0x0008 5FFF

Sector 3 8K x 16 0x0008 6000 0x0008 7FFF

Sector 4 32K x 16 0x0008 8000 0x0008 FFFF

Sector 5 32K x 16 0x0009 0000 0x0009 7FFF

Sector 6 32K x 16 0x0009 8000 0x0009 FFFF

Flash ECC Locations

TI OTP ECC 128 x 16 0x0107 0000 0x0107 007F

User-configurable DCSM OTP

128 x 16 0x0107 1000 0x0107 107F
ECC

Flash ECC (Sector 0) 1K x 16 0x0108 0000 0x0108 03FF

Flash ECC (Sector 1) 1K x 16 0x0108 0400 0x0108 07FF

Flash ECC (Sector 2) 1K x 16 0x0108 0800 0x0108 0BFF

Flash ECC (Sector 3) 1K x 16 0x0108 0C00 0x0108 0FFF

Flash ECC (Sector 4) 4K x 16 0x0108 1000 0x0108 1FFF

Flash ECC (Sector 5) 4K x 16 0x0108 2000 0x0108 2FFF

Flash ECC (Sector 6) 4K x 16 0x0108 3000 0x0108 3FFF

7.3.3 EMIF Chip Select Memory Map

The EMIF1 memory map is the same for both CPU subsystems. EMIF2 is available only on the CPU1
subsystem. The EMIF memory map is shown in Table 7-4.
Table 7-4. EMIF Chip Select Memory Map
EMIF CHIP SELECT SIZE(2) START ADDRESS END ADDRESS CLA ACCESS DMA ACCESS
EMIF1_CS0n - Data 256M × 16 0x8000 0000 0x8FFF FFFF Yes
EMIF1_CS2n - Program + Data(3) 2M × 16 0x0010 0000 0x002F FFFF Yes
EMIF1_CS3n - Program + Data 512K × 16 0x0030 0000 0x0037 FFFF Yes
EMIF1_CS4n - Program + Data 393K × 16 0x0038 0000 0x003D FFFF Yes
EMIF2_CS0n - Data(1) 32M × 16 0x9000 0000 0x91FF FFFF
EMIF2_CS2n - Program + Data(1) 4K × 16 0x0000 2000 0x0000 2FFF Yes (Data only)

(1) Available only on the CPU1 subsystem.

(2) Available memory size listed in this table is the maximum possible size assuming 32-bit memory. This may not apply to other memory
sizes because of pin mux setting. See Section 5.4.1 to find the available address lines for your use case.
(3) The 2M × 16 size is for a 32-bit interface with the assumption that 16-bit accesses are not performed; hence, byte enables are not
used (tied to active value on board). If byte enables are used, then the maximum size is smaller because byte enables are muxed with
address pins (see Section 5.4.1) . If 16-bit memory is used, then the maximum size is 1M × 16.

7.3.4 Peripheral Registers Memory Map

The peripheral registers memory map can be found in Table 7-5. The peripheral registers can be assigned to
either the CPU1 or CPU2 subsystems except where noted in Table 7-5. Registers in the peripheral frames share
a secondary master (CLA or DMA) selection with all other registers within the same peripheral frame. See the
TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual for details on the CPU
subsystem and secondary master selection.

Note
None of the device peripherals have program bus access.

Table 7-5. Peripheral Registers Memory Map

START END (1) CLA DMA
REGISTERS STRUCTURE NAME PROTECTED
ADDRESS ADDRESS ACCESS ACCESS
AdcaResultRegs ADC_RESULT_REGS 0x0000 0B00 0x0000 0B1F Yes Yes
AdcbResultRegs ADC_RESULT_REGS 0x0000 0B20 0x0000 0B3F Yes Yes
AdccResultRegs ADC_RESULT_REGS 0x0000 0B40 0x0000 0B5F Yes Yes
AdcdResultRegs ADC_RESULT_REGS 0x0000 0B60 0x0000 0B7F Yes Yes
(2)
CpuTimer0Regs CPUTIMER_REGS 0x0000 0C00 0x0000 0C07
(2)
CpuTimer1Regs CPUTIMER_REGS 0x0000 0C08 0x0000 0C0F
(2)
CpuTimer2Regs CPUTIMER_REGS 0x0000 0C10 0x0000 0C17
(2) (5)
PieCtrlRegs PIE_CTRL_REGS 0x0000 0CE0 0x0000 0CFF
Yes – CLA
(5) only, no
Cla1SoftIntRegs CLA_SOFTINT_REGS 0x0000 0CE0 0x0000 0CFF
CPU
access
(2)
DmaRegs DMA_REGS 0x0000 1000 0x0000 11FF
(2)
Cla1Regs CLA_REGS 0x0000 1400 0x0000 147F
Clb1LogicCfgRegs CLB_LOGIC_CONFIG_REGS 0x0000 3000 0x0000 30FF Yes Yes
Clb1LogicCtrlRegs CLB_LOGIC_CONTROL_REGS 0x0000 3100 0x0000 31FF Yes Yes
Clb1DataExchRegs CLB_DATA_EXCHANGE_REGS 0x0000 3200 0x0000 33FF Yes Yes
Clb2LogicCfgRegs CLB_LOGIC_CONFIG_REGS 0x0000 3400 0x0000 34FF Yes Yes
Clb2LogicCtrlRegs CLB_LOGIC_CONTROL_REGS 0x0000 3500 0x0000 35FF Yes Yes
Clb2DataExchRegs CLB_DATA_EXCHANGE_REGS 0x0000 3600 0x0000 37FF Yes Yes
Clb3LogicCfgRegs CLB_LOGIC_CONFIG_REGS 0x0000 3800 0x0000 38FF Yes Yes
Clb3LogicCtrlRegs CLB_LOGIC_CONTROL_REGS 0x0000 3900 0x0000 39FF Yes Yes

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Table 7-5. Peripheral Registers Memory Map (continued)

START END (1) CLA DMA
REGISTERS STRUCTURE NAME PROTECTED
ADDRESS ADDRESS ACCESS ACCESS
Clb3DataExchRegs CLB_DATA_EXCHANGE_REGS 0x0000 3A00 0x0000 3BFF Yes Yes
Clb4LogicCfgRegs CLB_LOGIC_CONFIG_REGS 0x0000 3C00 0x0000 3CFF Yes Yes
Clb4LogicCtrlRegs CLB_LOGIC_CONTROL_REGS 0x0000 3D00 0x0000 3DFF Yes Yes
Clb4DataExchRegs CLB_DATA_EXCHANGE_REGS 0x0000 3E00 0x0000 3FFF Yes Yes
Peripheral Frame 1
EPwm1Regs EPWM_REGS 0x0000 4000 0x0000 40FF Yes Yes Yes
EPwm2Regs EPWM_REGS 0x0000 4100 0x0000 41FF Yes Yes Yes
EPwm3Regs EPWM_REGS 0x0000 4200 0x0000 42FF Yes Yes Yes
EPwm4Regs EPWM_REGS 0x0000 4300 0x0000 43FF Yes Yes Yes
EPwm5Regs EPWM_REGS 0x0000 4400 0x0000 44FF Yes Yes Yes
EPwm6Regs EPWM_REGS 0x0000 4500 0x0000 45FF Yes Yes Yes
EPwm7Regs EPWM_REGS 0x0000 4600 0x0000 46FF Yes Yes Yes
EPwm8Regs EPWM_REGS 0x0000 4700 0x0000 47FF Yes Yes Yes
EPwm9Regs EPWM_REGS 0x0000 4800 0x0000 48FF Yes Yes Yes
EPwm10Regs EPWM_REGS 0x0000 4900 0x0000 49FF Yes Yes Yes
EPwm11Regs EPWM_REGS 0x0000 4A00 0x0000 4AFF Yes Yes Yes
EPwm12Regs EPWM_REGS 0x0000 4B00 0x0000 4BFF Yes Yes Yes
ECap1Regs ECAP_REGS 0x0000 5000 0x0000 501F Yes Yes Yes
ECap2Regs ECAP_REGS 0x0000 5020 0x0000 503F Yes Yes Yes
ECap3Regs ECAP_REGS 0x0000 5040 0x0000 505F Yes Yes Yes
ECap4Regs ECAP_REGS 0x0000 5060 0x0000 507F Yes Yes Yes
ECap5Regs ECAP_REGS 0x0000 5080 0x0000 509F Yes Yes Yes
ECap6Regs ECAP_REGS 0x0000 50A0 0x0000 50BF Yes Yes Yes
EQep1Regs EQEP_REGS 0x0000 5100 0x0000 513F Yes Yes Yes
EQep2Regs EQEP_REGS 0x0000 5140 0x0000 517F Yes Yes Yes
EQep3Regs EQEP_REGS 0x0000 5180 0x0000 51BF Yes Yes Yes
DacaRegs DAC_REGS 0x0000 5C00 0x0000 5C0F Yes Yes Yes
DacbRegs DAC_REGS 0x0000 5C10 0x0000 5C1F Yes Yes Yes
DaccRegs DAC_REGS 0x0000 5C20 0x0000 5C2F Yes Yes Yes
Cmpss1Regs CMPSS_REGS 0x0000 5C80 0x0000 5C9F Yes Yes Yes
Cmpss2Regs CMPSS_REGS 0x0000 5CA0 0x0000 5CBF Yes Yes Yes
Cmpss3Regs CMPSS_REGS 0x0000 5CC0 0x0000 5CDF Yes Yes Yes
Cmpss4Regs CMPSS_REGS 0x0000 5CE0 0x0000 5CFF Yes Yes Yes
Cmpss5Regs CMPSS_REGS 0x0000 5D00 0x0000 5D1F Yes Yes Yes
Cmpss6Regs CMPSS_REGS 0x0000 5D20 0x0000 5D3F Yes Yes Yes
Cmpss7Regs CMPSS_REGS 0x0000 5D40 0x0000 5D5F Yes Yes Yes
Cmpss8Regs CMPSS_REGS 0x0000 5D60 0x0000 5D7F Yes Yes Yes
Sdfm1Regs SDFM_REGS 0x0000 5E00 0x0000 5E7F Yes Yes Yes
Sdfm2Regs SDFM_REGS 0x0000 5E80 0x0000 5EFF Yes Yes Yes
Peripheral Frame 2
McbspaRegs MCBSP_REGS 0x0000 6000 0x0000 603F Yes Yes Yes
McbspbRegs MCBSP_REGS 0x0000 6040 0x0000 607F Yes Yes Yes
SpiaRegs SPI_REGS 0x0000 6100 0x0000 610F Yes Yes Yes
SpibRegs SPI_REGS 0x0000 6110 0x0000 611F Yes Yes Yes
SpicRegs SPI_REGS 0x0000 6120 0x0000 612F Yes Yes Yes
(3)
UppRegs UPP_REGS 0x0000 6200 0x0000 62FF Yes Yes Yes

(2)
WdRegs WD_REGS 0x0000 7000 0x0000 703F Yes
(2)
NmiIntruptRegs NMI_INTRUPT_REGS 0x0000 7060 0x0000 706F Yes

Table 7-5. Peripheral Registers Memory Map (continued)

START END (1) CLA DMA
REGISTERS STRUCTURE NAME PROTECTED
ADDRESS ADDRESS ACCESS ACCESS
(2)
XintRegs XINT_REGS 0x0000 7070 0x0000 707F Yes
SciaRegs SCI_REGS 0x0000 7200 0x0000 720F Yes
ScibRegs SCI_REGS 0x0000 7210 0x0000 721F Yes
ScicRegs SCI_REGS 0x0000 7220 0x0000 722F Yes
ScidRegs SCI_REGS 0x0000 7230 0x0000 723F Yes
I2caRegs I2C_REGS 0x0000 7300 0x0000 733F Yes
I2cbRegs I2C_REGS 0x0000 7340 0x0000 737F Yes
AdcaRegs ADC_REGS 0x0000 7400 0x0000 747F Yes Yes
AdcbRegs ADC_REGS 0x0000 7480 0x0000 74FF Yes Yes
AdccRegs ADC_REGS 0x0000 7500 0x0000 757F Yes Yes
AdcdRegs ADC_REGS 0x0000 7580 0x0000 75FF Yes Yes
(3)
InputXbarRegs INPUT_XBAR_REGS 0x0000 7900 0x0000 791F Yes
(3)
XbarRegs XBAR_REGS 0x0000 7920 0x0000 793F Yes
(3)
TrigRegs TRIG_REGS 0x0000 7940 0x0000 794F Yes
(2)
DmaClaSrcSelRegs DMA_CLA_SRC_SEL_REGS 0x0000 7980 0x0000 798F Yes
(3)
EPwmXbarRegs EPWM_XBAR_REGS 0x0000 7A00 0x0000 7A3F Yes
(3)
OutputXbarRegs OUTPUT_XBAR_REGS 0x0000 7A80 0x0000 7ABF Yes
(3)
GpioCtrlRegs GPIO_CTRL_REGS 0x0000 7C00 0x0000 7D7F Yes
(2)
GpioDataRegs GPIO_DATA_REGS 0x0000 7F00 0x0000 7F2F Yes Yes
(3)
UsbaRegs USB_REGS 0x0004 0000 0x0004 0FFF Yes
Emif1Regs EMIF_REGS 0x0004 7000 0x0004 77FF Yes
(3)
Emif2Regs EMIF_REGS 0x0004 7800 0x0004 7FFF Yes
CanaRegs CAN_REGS 0x0004 8000 0x0004 87FF Yes
CanbRegs CAN_REGS 0x0004 A000 0x0004 A7FF Yes
(2) IPC_REGS_CPU1
IpcRegs 0x0005 0000 0x0005 0023 Yes
IPC_REGS_CPU2
(2)
FlashPumpSemaphoreRegs FLASH_PUMP_SEMAPHORE_REGS 0x0005 0024 0x0005 0025 Yes
(3)
DevCfgRegs DEV_CFG_REGS 0x0005 D000 0x0005 D17F Yes
(3)
AnalogSubsysRegs ANALOG_SUBSYS_REGS 0x0005 D180 0x0005 D1FF Yes
(4)
ClkCfgRegs CLK_CFG_REGS 0x0005 D200 0x0005 D2FF Yes
(2)
CpuSysRegs CPU_SYS_REGS 0x0005 D300 0x0005 D3FF Yes
(3)
RomPrefetchRegs ROM_PREFETCH_REGS 0x0005 E608 0x0005 E60B Yes
(2)
DcsmZ1Regs DCSM_Z1_REGS 0x0005 F000 0x0005 F02F Yes
(2)
DcsmZ2Regs DCSM_Z2_REGS 0x0005 F040 0x0005 F05F Yes
(2)
DcsmCommonRegs DCSM_COMMON_REGS 0x0005 F070 0x0005 F07F Yes
(2)
MemCfgRegs MEM_CFG_REGS 0x0005 F400 0x0005 F47F Yes
(2)
Emif1ConfigRegs EMIF1_CONFIG_REGS 0x0005 F480 0x0005 F49F Yes
(3)
Emif2ConfigRegs EMIF2_CONFIG_REGS 0x0005 F4A0 0x0005 F4BF Yes
(2)
AccessProtectionRegs ACCESS_PROTECTION_REGS 0x0005 F4C0 0x0005 F4FF Yes
(2)
MemoryErrorRegs MEMORY_ERROR_REGS 0x0005 F500 0x0005 F53F Yes
(3)
RomWaitStateRegs ROM_WAIT_STATE_REGS 0x0005 F540 0x0005 F541 Yes
(2)
Flash0CtrlRegs FLASH_CTRL_REGS 0x0005 F800 0x0005 FAFF Yes
(2)
Flash0EccRegs FLASH_ECC_REGS 0x0005 FB00 0x0005 FB3F Yes

(1) The CPU (not applicable for CLA or DMA) contains a write followed by read protection mode to ensure that any read operation that
follows a write operation within a protected address range is executed as written by delaying the read operation until the write is
initiated.
(2) A unique copy of these registers exist on each CPU subsystem.
(3) These registers are available only on the CPU1 subsystem.
(4) These registers are mapped to either CPU1 or CPU2 based on a semaphore.
(5) The address overlap of PieCtrlRegs and Cla1SoftIntRegs is correct. Each CPU, C28x and CLA, only has access to one of the register
sets.

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7.3.5 Memory Types

Table 7-6 provides more information about each memory type.
Table 7-6. Memory Types
HIBERNATE ACCESS
MEMORY TYPE ECC-CAPABLE PARITY SECURITY
RETENTION PROTECTION
M0, M1 Yes – – Yes –
D0, D1 Yes – Yes – Yes
LSx – Yes Yes – Yes
GSx – Yes – – Yes
CPU/CLA MSGRAM – Yes Yes – Yes
Boot ROM – – – N/A –
Secure ROM – – Yes N/A –
Flash Yes – Yes N/A N/A
User-configurable DCSM OTP Yes – Yes N/A N/A

7.3.5.1 Dedicated RAM (Mx and Dx RAM)

The CPU subsystem has four dedicated ECC-capable RAM blocks: M0, M1, D0, and D1. M0/M1 memories are
small nonsecure blocks that are tightly coupled with the CPU (that is, only the CPU has access to them). D0/D1
memories are secure blocks and also have the access-protection feature (CPU write/CPU fetch protection).
7.3.5.2 Local Shared RAM (LSx RAM)
RAM blocks which are dedicated to each subsystem and are accessible to its CPU and CLA only, are called
local shared RAMs (LSx RAMs).
All LSx RAM blocks have parity. These memories are secure and have the access protection (CPU write/CPU
fetch) feature.
By default, these memories are dedicated to the CPU only, and the user could choose to share these memories
with the CLA by configuring the MSEL_LSx bit field in the LSxMSEL registers appropriately.
Table 7-7 shows the master access for the LSx RAM.
Table 7-7. Master Access for LSx RAM
(With Assumption That all Other Access Protections are Disabled)
MSEL_LSx CLAPGM_LSx CPU ALLOWED ACCESS CLA ALLOWED ACCESS COMMENT
LSx memory is configured
00 X All –
as CPU dedicated RAM.
Data Read LSx memory is shared
01 0 All
Data Write between CPU and CLA1.
Emulation Read LSx memory is CLA1
01 1 Fetch Only
Emulation Write program memory.

7.3.5.3 Global Shared RAM (GSx RAM)

RAM blocks which are accessible from both the CPU and DMA are called global shared RAMs (GSx RAMs).
Each shared RAM block can be owned by either CPU subsystem based on the configuration of respective bits in
the GSxMSEL register.
All GSx RAM blocks have parity.
When a GSx RAM block is owned by a CPU subsystem, the CPUx and CPUx.DMA will have full access to that
RAM block whereas the other CPUy and CPUy.DMA will only have read access (no fetch/write access).
Table 7-8 shows the master access for the GSx RAM.
Table 7-8. Master Access for GSx RAM
(With Assumption That all Other Access Protections are Disabled)
INSTRUCTION CPUx.DMA
GSxMSEL CPU READ WRITE CPUx.DMA READ
FETCH WRITE
CPU1 Yes Yes Yes Yes Yes
0
CPU2 – Yes – Yes –
CPU1 – Yes – Yes –
1
CPU2 Yes Yes Yes Yes Yes

The GSx RAMs have access protection (CPU write/CPU fetch/DMA write).
7.3.5.4 CPU Message RAM (CPU MSGRAM)
These RAM blocks can be used to share data between CPU1 and CPU2. Since these RAMs are used for
interprocessor communication, they are also called IPC RAMs. The CPU MSGRAMs have CPU/DMA read/write
access from its own CPU subsystem, and CPU/DMA read only access from the other subsystem.
This RAM has parity.
7.3.5.5 CLA Message RAM (CLA MSGRAM)
These RAM blocks can be used to share data between the CPU and CLA. The CLA has read and write access
to the "CLA to CPU MSGRAM." The CPU has read and write access to the "CPU to CLA MSGRAM." The CPU
and CLA both have read access to both MSGRAMs.
This RAM has parity.

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7.4 Identification
Table 7-9 shows the Device Identification Registers.
Table 7-9. Device Identification Registers
NAME ADDRESS SIZE (x16) DESCRIPTION
Device part identification number(1)
TMS320F28379D 0x**F9 0300
TMS320F28378D 0x**FA 0300
0x0005 D00A (CPU1)
PARTIDH 2 TMS320F28377D 0x**FF 0300
0x0007 0202 (CPU2)
TMS320F28376D 0x**FE 0300
TMS320F28375D 0x**FD 0300
TMS320F28374D 0x**FC 0300
Silicon revision number
Revision 0 0x0000 0000
REVID 0x0005 D00C 2 Revision A 0x0000 0000
Revision B 0x0000 0002
Revision C 0x0000 0003
Unique identification number. This number is different on each
individual device with the same PARTIDH. This can be used as
UID_UNIQUE 0x0007 03CC 2
a serial number in the application. This number is present only
on TMS Revision C devices.
CPU identification number
CPU ID 0x0007 026D 1 CPU1 0xXX01
CPU2 0xXX02
JTAG ID N/A N/A JTAG Device ID 0x0B99 C02F

(1) PARTIDH may have one of two values for each part number, with the eight most significant bits identified with '**' above being 0x00 or
0x02.

7.5 Bus Architecture – Peripheral Connectivity

Table 7-10 shows a broad view of the peripheral and configuration register accessibility from each bus master.
Peripherals can be individually assigned to the CPU1 or CPU2 subsystem (for example, ePWM can be assigned
to CPU1 and eQEP assigned to CPU2). Peripherals within peripheral frames 1 or 2 will all be mapped to the
respective secondary master as a group (if SPI is assigned to CPUx.DMA, then McBSP is also assigned to
CPUx.DMA).
Table 7-10. Bus Master Peripheral Access
PERIPHERALS
CPU1.DMA CPU1.CLA1 CPU1 CPU2 CPU2.CLA1 CPU2.DMA
(BY BUS ACCESS TYPE)
Peripherals that can be assigned to CPU1 or CPU2 and have common selectable Secondary Masters
Peripheral Frame 1:
• ePWM
• SDFM
• eCAP(1) Y Y Y Y Y Y
• eQEP(1)
• CMPSS(1)
• DAC(1)

Peripheral Frame 1:
• HRPWM Y Y Y

Peripheral Frame 2:
• SPI Y Y Y Y Y Y
• McBSP

Peripheral Frame 2:
• uPP Configuration(1) Y Y Y

Peripherals that can be assigned to CPU1 or CPU2 subsystems

SCI Y Y
I2C Y Y
CAN Y Y
ADC Configuration Y Y Y Y
EMIF1 Y Y Y Y
Peripherals and Device Configuration Registers only on CPU1 subsystem
EMIF2 Y Y
USB Y
Device Capability, Peripheral Reset, Peripheral CPU
Y
Select
GPIO Pin Mapping and Configuration Y
Analog System Control Y
uPP Message RAMs Y Y
Reset Configuration Y
Accessible by only one CPU at a time with Semaphore
Clock and PLL Configuration Y Y

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Table 7-10. Bus Master Peripheral Access (continued)

PERIPHERALS
CPU1.DMA CPU1.CLA1 CPU1 CPU2 CPU2.CLA1 CPU2.DMA
(BY BUS ACCESS TYPE)
Peripherals and Registers with Unique Copies of Registers for each CPU and CLA Master (2)

System Configuration
Y Y
(WD, NMIWD, LPM, Peripheral Clock Gating)
Flash Configuration(3) Y Y
CPU Timers Y Y
DMA and CLA Trigger Source Select Y Y
GPIO Data(4) Y Y Y Y
ADC Results Y Y Y Y Y Y

(1) These modules are on a Peripheral Frame with DMA access; however, they cannot trigger a DMA transfer.
(2) Each CPUx and CPUx.CLA1 can only access its own copy of these registers.
(3) At any given time, only one CPU can perform program or erase operations on the Flash.
(4) The GPIO Data Registers are unique for each CPUx and CPUx.CLAx. When the GPIO Pin Mapping Register is configured to assign a
GPIO to a particular master, the respective GPIO Data Register will control the GPIO. See the General-Purpose Input/Output (GPIO)
chapter of the TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual for more details.

7.6 C28x Processor

The CPU is a 32-bit fixed-point processor. This device draws from the best features of digital signal processing;
reduced instruction set computing (RISC); and microcontroller architectures, firmware, and tool sets.
The CPU features include a modified Harvard architecture and circular addressing. The RISC features
are single-cycle instruction execution, register-to-register operations, and modified Harvard architecture. The
microcontroller features include ease of use through an intuitive instruction set, byte packing and unpacking,
and bit manipulation. The modified Harvard architecture of the CPU enables instruction and data fetches to be
performed in parallel. The CPU can read instructions and data while it writes data simultaneously to maintain the
single-cycle instruction operation across the pipeline. The CPU does this over six separate address/data buses.
For more information on CPU architecture and instruction set, see the TMS320C28x CPU and Instruction Set
Reference Guide.
7.6.1 Floating-Point Unit
The C28x plus floating-point (C28x+FPU) processor extends the capabilities of the C28x fixed-point CPU by
adding registers and instructions to support IEEE single-precision floating-point operations.
Devices with the C28x+FPU include the standard C28x register set plus an additional set of floating-point unit
registers. The additional floating-point unit registers are the following:
• Eight floating-point result registers, RnH (where n = 0–7)
• Floating-point Status Register (STF)
• Repeat Block Register (RB)
All of the floating-point registers, except the repeat block register, are shadowed. This shadowing can be used in
high-priority interrupts for fast context save and restore of the floating-point registers.
For more information, see the TMS320C28x Extended Instruction Sets Technical Reference Manual.

7.6.2 Trigonometric Math Unit

The TMU extends the capabilities of a C28x+FPU by adding instructions and leveraging existing FPU
instructions to speed up the execution of common trigonometric and arithmetic operations listed in Table 7-11.
Table 7-11. TMU Supported Instructions
INSTRUCTIONS C EQUIVALENT OPERATION PIPELINE CYCLES
MPY2PIF32 RaH,RbH a = b * 2pi 2/3
DIV2PIF32 RaH,RbH a = b / 2pi 2/3
DIVF32 RaH,RbH,RcH a = b/c 5
SQRTF32 RaH,RbH a = sqrt(b) 5
SINPUF32 RaH,RbH a = sin(b*2pi) 4
COSPUF32 RaH,RbH a = cos(b*2pi) 4
ATANPUF32 RaH,RbH a = atan(b)/2pi 4
QUADF32 RaH,RbH,RcH,RdH Operation to assist in calculating ATANPU2 5

No changes have been made to existing instructions, pipeline or memory bus architecture. All TMU instructions
use the existing FPU register set (R0H to R7H) to carry out their operations. A detailed explanation of the
workings of the FPU can be found in the TMS320C28x Extended Instruction Sets Technical Reference Manual.
7.6.3 Viterbi, Complex Math, and CRC Unit II (VCU-II)
The VCU-II is the second-generation Viterbi, Complex Math, and CRC extension to the C28x CPU. The VCU-II
extends the capabilities of the C28x CPU by adding registers and instructions to accelerate the performance of
FFTs and communications-based algorithms. The C28x+VCU-II supports the following algorithm types:
• Viterbi Decoding
Viterbi decoding is commonly used in baseband communications applications. The Viterbi decode algorithm
consists of three main parts: branch metric calculations, compare-select (Viterbi butterfly), and a traceback
operation. Table 7-12 shows a summary of the VCU performance for each of these operations.
Table 7-12. Viterbi Decode Performance
VITERBI OPERATION VCU CYCLES

Branch Metric Calculation (code rate = 1/2) 1

Branch Metric Calculation (code rate = 1/3) 2p

Viterbi Butterfly (add-compare-select) 2(1)

Traceback per Stage 3(2)

(1) C28x CPU takes 15 cycles per butterfly.

(2) C28x CPU takes 22 cycles per stage.

• Cyclic Redundancy Check

Cyclic redundancy check (CRC) algorithms provide a straightforward method for verifying data integrity over
large data blocks, communication packets, or code sections. The C28x+VCU can perform 8-bit, 16-bit, 24-bit,
and 32-bit CRCs. For example, the VCU can compute the CRC for a block length of 10 bytes in 10 cycles. A
CRC result register contains the current CRC, which is updated whenever a CRC instruction is executed.

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• Complex Math
Complex math is used in many applications, a few of which are:
– Fast Fourier Transform (FFT)
The complex FFT is used in spread spectrum communications, as well as in many signal processing
algorithms.
– Complex filters
Complex filters improve data reliability, transmission distance, and power efficiency. The C28x+VCU can
perform a complex I and Q multiply with coefficients (four multiplies) in a single cycle. In addition, the
C28x+VCU can read/write the real and imaginary parts of 16-bit complex data to memory in a single cycle.
Table 7-13 shows a summary of the VCU operations enabled by the VCU.
Table 7-13. Complex Math Performance
COMPLEX MATH OPERATION VCU CYCLES NOTES

Add or Subtract 1 32 +/- 32 = 32-bit (Useful for filters)

Add or Subtract 1 16 +/- 32 = 15-bit (Useful for FFT)

Multiply 2p 16 x 16 = 32-bit

Multiply and Accumulate (MAC) 2p 32 + 32 = 32-bit, 16 x 16 = 32-bit

RPT MAC 2p+N Repeat MAC. Single cycle after the first operation.

For more information, see the TMS320C28x Extended Instruction Sets Technical Reference Manual.

7.7 Control Law Accelerator

The CLA is an independent single-precision (32-bit) FPU processor with its own bus structure, fetch mechanism,
and pipeline. Eight individual CLA tasks can be specified. Each task is started by software or a peripheral such
as the ADC, ePWM, eCAP, eQEP, or CPU Timer 0. The CLA executes one task at a time to completion. When
a task completes, the main CPU is notified by an interrupt to the PIE and the CLA automatically begins the
next highest-priority pending task. The CLA can directly access the ADC Result registers, ePWM, eCAP, eQEP,
Comparator and DAC registers. Dedicated message RAMs provide a method to pass additional data between
the main CPU and the CLA.
Figure 7-2 shows the CLA block diagram.

CLA Control
Register Set
MIFR(16) CLA_INT1
From MPERINT1 to
MIOVF(16)
Shared to MICLR(16) CLA_INT8
Peripherals MPERINT8 MICLROVF(16) INT11 C28x
PIE
MIFRC(16) INT12 CPU
MIER(16)
MIRUN(16)
LVF
LUF
MVECT1(16)
MVECT2(16)
MVECT3(16)
SYSCLK MVECT4(16)
CLA Clock Enable MVECT5(16)
SYSRSn CPU Read/Write Data Bus
MVECT6(16)
MVECT7(16)
MVECT8(16) CLA Program
CLA Program Bus Memory (LSx)
MCTL(16)

LSxMSEL[MSEL_LSx]
LSxCLAPGM[CLAPGM_LSx]

CPU Data Bus

CLA Data
CLA Execution Memory (LSx)
CLA Data Bus

Register Set
MPC(16) CLA Message
MSTF(32) RAMs
MR0(32)
MR1(32)
MR2(32) Shared
MR3(32) Peripherals
MAR0(16) MEALLOW
MAR1(16)

CPU Read Data Bus

Figure 7-2. CLA Block Diagram

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7.8 Direct Memory Access

Each CPU has its own 6-channel DMA module. The DMA module provides a hardware method of transferring
data between peripherals and/or memory without intervention from the CPU, thereby freeing up bandwidth for
other system functions. Additionally, the DMA has the capability to orthogonally rearrange the data as it is
transferred as well as “ping-pong” data between buffers. These features are useful for structuring data into
blocks for optimal CPU processing.
The DMA module is an event-based machine, meaning it requires a peripheral or software trigger to start
a DMA transfer. Although it can be made into a periodic time-driven machine by configuring a timer as the
interrupt trigger source, there is no mechanism within the module itself to start memory transfers periodically.
The interrupt trigger source for each of the six DMA channels can be configured separately and each channel
contains its own independent PIE interrupt to let the CPU know when a DMA transfer has either started or
completed. Five of the six channels are exactly the same, while Channel 1 has the ability to be configured at a
higher priority than the others.
DMA features include:
• Six channels with independent PIE interrupts
• Peripheral interrupt trigger sources
– ADC interrupts and EVT signals
– Multichannel buffered serial port transmit and receive
– External interrupts
– CPU timers
– EPWMxSOC signals
– SPIx transmit and receive
– SDFM
– Software trigger
• Data sources and destinations:
– GSx RAM
– CPU message RAM (IPC RAM)
– ADC result registers
– ePWMx
– SPI
– McBSP
– EMIF
• Word Size: 16-bit or 32-bit (SPI and McBSP limited to 16-bit)
• Throughput: four cycles/word (without arbitration)

Figure 7-3 shows a device-level block diagram of the DMA.

ADC ADC CPU1 CPU1 Global Shared MSG RAM MSG RAM
WRAPPER RESULTS XINT TIMER 16x 4Kx16 1Kx16 1Kx16
(4) (4) (5) (3) GS0-15 RAMs CPU2 to CPU1 CPU1 to CPU2

C28x CPU1 Bus

CPU1.DMA Bus

TINT (0-2)

DMA_CHx (1-6)
XINT (1-5) DMA Trigger
Source Selection
ADC INT (A-D) (1-4), EVT (A-D) DMACHSRCSEL1.CHx DMA C28x
SDxFLTy (x = 1 to 2, y = 1 to 4) DMACHSRCSEL2.CHx CPU1 CPU1
SOCA (1-12), SOCB (1-12) CHx.MODE.PERINTSEL
MXEVT (A-B), MREVT (A-B) (x = 1 to 6) PIE
SPITX (A-C), SPIRX (A-C)

DMA Trigger

DMA_CHx (1-6)
Source Selection

DMACHSRCSEL1.CHx DMA C28x

DMACHSRCSEL2.CHx CPU2 CPU2
XINT (1-5) CHx.MODE.PERINTSEL
(x = 1 to 6)
TINT (0-2) PIE

CPU2.DMA Bus
C28x CPU2 Bus

DMA Trigger Source

CMPSS

CPU2 CPU2
eQEP
eCAP

CPU and DMA Data Path

DAC

SDFM EPWM McBSP SPI

(8) EMIF1 XINT TIMER
(12) (2) (3)
(5) (3)

Figure 7-3. DMA Block Diagram

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7.9 Interprocessor Communication Module

The IPC module supports several methods of interprocessor communication:
• Thirty-two IPC flags per CPU, which can be used to signal events or indicate status through software polling.
Four flags per CPU can generate interrupts.
• Shared data registers, which can be used to send commands or other small pieces of information between
CPUs. Although the register names were chosen to support a command/response system, they can be used
for any purpose as defined in software.
• Boot mode and status registers, which allow CPU1 to control the CPU2 boot process.
• A general-purpose free-running 64-bit counter.
• Two shared message RAMs, which can be used to transfer bulk data. Each RAM can be read by both CPUs.
CPU1 can write to one RAM and CPU2 can write to the other.
Figure 7-4 shows the IPC architecture.
SET31
CLR31 ACK31
FLG31

R=0/W=1 IPCSET[31:0] SET0

R=0/W=1 IPCCLR[31:0] CLR0 ACK0 IPCACK[31:0] R=0/W=1
FLG0

Gen Int Pulse

C1TOC2IPCINT1/2/3/4
CPU2.
(on FLG 0->1) ePIE

R IPCFLG[31:0] IPCSTS[31:0] R

R/W IPCSENDCOM[31:0] C1TOC2IPCCOM[31:0] IPCRECVCOM[31:0] R

R/W IPCSENDADDR[31:0] C1TOC2IPCADDR[31:0] IPCRECVADDR[31:0] R

R/W IPCSENDDATA[31:0] C1TOC2IPCDATAW[31:0] IPCRECVDATA[31:0] R

R IPCREMOTEREPLY[31:0] C1TOC2IPCDATAR[31:0] IPCLOCALREPLY[31:0] R/W

R/W IPCBOOTMODE[31:0] R

R IPCBOOTSTS[31:0] R/W

CPU1.EmulationHalt CPU2.EmulationHalt
64-bit Free Run Counter
CPU1 PLLSYSCLK CPU2
R IPCCOUNTERH/L[31:0] R

SET31
ACK31 CLR31
FLG31

SET0 IPCSET[31:0] R=0/W=1

R=0/W=1 IPCACK[31:0] ACK0 CLR0 IPCCLR[31:0] R=0/W=1
FLG0

CPU1. C2TOC1IPCINT1/2/3/4
Gen Int Pulse
ePIE (on FLG 0->1)

R IPCSTS[31:0] IPCFLG[31:0] R

R IPCRECVCOM[31:0] C2TOC1IPCCOM[31:0] IPCSENDCOM[31:0] R/W

R IPCRECVADDR[31:0] C2TOC1IPCADDR[31:0] IPCSENDADDR[31:0] R/W

R IPCRECVDATA[31:0] C2TOC1IPCDATAW[31:0] IPCSENDDATA[31:0] R/W

R/W IPCLOCALREPLY[31:0] C2TOC1IPCDATAR[31:0] IPCREMOTEREPLY[31:0] R

Figure 7-4. IPC Architecture

7.10 Boot ROM and Peripheral Booting

The device boot ROM (on both the CPUs) contains bootloading software. The CPU1 boot ROM does the system
initialization before bringing CPU2 out of reset. The device boot ROM is executed each time the device comes
out of reset. Users can configure the device to boot to flash (using GET mode) or choose to boot the device
through one of the bootable peripherals by configuring the boot mode GPIO pins.
The CPU1 boot ROM, being master, owns the boot mode GPIO and boot configurations. The CPU2 boot ROM
either boots to flash (if configured to do so through user configurable DCSM OTP) or enters a WAIT BOOT mode
if no OTP is programmed. In WAIT BOOT mode, the CPU1 application instructs the CPU2 boot ROM on how to
boot further using boot mode IPC commands supported by CPU2 boot ROM.
Table 7-14 shows the possible boot modes supported on the device. The default boot mode pins are GPIO72
(boot mode pin 1) and GPIO 84 (boot mode pin 0). Users may choose to have weak pullups for boot mode
pins if they use a peripheral on these pins as well, so the pullups can be overdriven. On this device, customers
can change the factory default boot mode pins by programming user configurable DCSM OTP locations. This
is recommended only for cases in which the factory default boot mode pins do not fit into the customer design.
More details on the locations to be programmed is available in the TMS320F2837xD Dual-Core Real-Time
Microcontrollers Technical Reference Manual .
Table 7-14. Device Boot Mode
GPIO72 GPIO84
(BOOT (BOOT
MODE NO. CPU1 BOOT MODE CPU2 BOOT MODE TRST
MODE MODE
PIN 1) PIN 0)
0 Parallel I/O Boot from Master 0 0 0
1 SCI Mode Boot from Master 0 0 1
2 Wait Boot Mode Boot from master 0 1 0
3 Get Mode Boot from Master 0 1 1
EMU Boot Mode (JTAG debug probe
4-7 Boot from Master 1 X X
connected)

Note
The default behavior of Get mode is boot-to-flash. On unprogrammed devices, using Get mode
will result in repeated watchdog resets, which may prevent proper JTAG connection and device
initialization. Use Wait mode or another boot mode for unprogrammed devices.

CAUTION
Some reset sources are internally driven by the device. The user must ensure the pins used for boot
mode are not actively driven by other devices in the system for these cases. The boot configuration
has a provision for changing the boot pins in OTP. For more details, see the TMS320F2837xD
Dual-Core Real-Time Microcontrollers Technical Reference Manual .

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7.10.1 EMU Boot or Emulation Boot

The CPU enters this boot when it detects that TRST is HIGH (that is, when a JTAG debug probe/debugger
is connected). In this mode, the user can program the EMU_BOOTCTRL control-word (at location 0xD00)
to instruct the device on how to boot. If the contents of the EMU_BOOTCTRL location are invalid, then the
device would default to WAIT Boot mode. The emulation boot allows users to verify the device boot before
programming the boot mode into OTP. Note that EMU_BOOTCTRL is not actually a register, but refers to a
location in RAM (PIE RAM). PIE RAM starts at 0xD00, but the first few locations are reserved (when initializing
the PIE vector table in application code) for these boot ROM variables.
7.10.2 WAIT Boot Mode
The device in this boot mode loops in the boot ROM. This mode is useful if users want to connect a debugger on
a secure device or if users do not want the device to execute an application in flash yet.
7.10.3 Get Mode
The default behavior of Get mode is boot-to-flash. This behavior can be changed by programming the
Zx-OTPBOOTCTRL locations in user configurable DCSM OTP. The user configurable DCSM OTP on this
device is divided in to two secure zones: Z1 and Z2. The Get mode function in boot ROM first checks if a
valid OTPBOOTCTRL value is programmed in Z1. If the answer is yes, then the device boots as per the
Z1-OTPBOOTCTRL location. The Z2-OTPBOOTCTRL location is read and decodes only if Z1-OTPBOOTCTRL
is invalid or not programmed. If either Zx-OTPBOOTCTRL location is not programmed, then the device defaults
to factory default operation, which is to use factory default boot mode pins to boot to flash if the boot mode
pins are set to GET MODE. Users can choose the device through which to boot—SPI, I2C, CAN, and USB—by
programming proper values into the user configurable DCSM OTP. More details on this can be found in the
TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual .

7.10.4 Peripheral Pins Used by Bootloaders

Table 7-15 shows the GPIO pins used by each peripheral bootloader. This device supports two sets of GPIOs for
each mode, as shown in Table 7-15.
Table 7-15. GPIO Pins Used by Each Peripheral Bootloader
BOOTLOADER GPIO PINS NOTES
SCITXDA: GPIO84 SCIA Boot I/O option 1 (default SCI option
SCI-Boot0
SCIRXDA: GPIO85 when chosen through Boot Mode GPIOs)
SCIRXDA: GPIO28
SCI-Boot1 SCIA Boot option 2 – with alternate I/Os.
SCITXDA: GPIO29
D0 – GPIO65
D1 – GPIO64
D2 – GPIO58
D3 – GPIO59
D4 – GPIO60
Parallel Boot
D5 – GPIO61
D6 – GPIO62
D7 – GPIO63
HOST_CTRL – GPIO70
DSP_CTRL – GPIO69
CANRXA: GPIO70
CAN-Boot0 CAN-A Boot – I/O option 1
CANTXA: GPIO71
CANRXA: GPIO62
CAN-Boot1 CAN-A Boot – I/O option 2
CANTXA: GPIO63
SDAA: GPIO91
I2C-Boot0 I2CA Boot – I/O option 1
SCLA: GPIO92
SDAA: GPIO32
I2C-Boot1 I2CA Boot – I/O option 2
SCLA: GPIO33
SPISIMOA - GPIO58
SPISOMIA - GPIO59
SPI-Boot0 SPIA Boot – I/O option 1
SPICLKA - GPIO60
SPISTEA - GPIO61
SPISIMOA – GPIO16
SPISOMIA – GPIO17
SPI-Boot1 SPIA Boot – I/O option 2
SPICLKA – GPIO18
SPISTEA – GPIO19
The USB Bootloader will switch the clock
source to the external crystal oscillator (X1
USB0DM - GPIO42
USB Boot and X2 pins). A 20-MHz crystal should be
USB0DP - GPIO43
present on the board if this boot mode is
selected.

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7.11 Dual Code Security Module

The dual code security module (DCSM) prevents access to on-chip secure memories. The term “secure” means
access to secure memories and resources is blocked. The term “unsecure” means access is allowed; for
example, through a debugging tool such as Code Composer Studio™ (CSS).
The code security mechanism offers protection for two zones, Zone 1 (Z1) and Zone 2 (Z2). The security
implementation for both the zones is identical. Each zone has its own dedicated secure resource (OTP memory
and secure ROM) and allocated secure resource (CLA, LSx RAM, and flash sectors).
The security of each zone is ensured by its own 128-bit password (CSM password). The password for each
zone is stored in an OTP memory location based on a zone-specific link pointer. The link pointer value can be
changed to program a different set of security settings (including passwords) in OTP.

Note

THE CODE SECURITY MODULE (CSM) INCLUDED ON THIS DEVICE WAS DESIGNED
TO PASSWORD PROTECT THE DATA STORED IN THE ASSOCIATED MEMORY AND IS
WARRANTED BY TEXAS INSTRUMENTS (TI), IN ACCORDANCE WITH ITS STANDARD TERMS
AND CONDITIONS, TO CONFORM TO TI'S PUBLISHED SPECIFICATIONS FOR THE WARRANTY
PERIOD APPLICABLE FOR THIS DEVICE.
TI DOES NOT, HOWEVER, WARRANT OR REPRESENT THAT THE CSM CANNOT BE
COMPROMISED OR BREACHED OR THAT THE DATA STORED IN THE ASSOCIATED MEMORY
CANNOT BE ACCESSED THROUGH OTHER MEANS. MOREOVER, EXCEPT AS SET FORTH
ABOVE, TI MAKES NO WARRANTIES OR REPRESENTATIONS CONCERNING THE CSM OR
OPERATION OF THIS DEVICE, INCLUDING ANY IMPLIED WARRANTIES OF MERCHANTABILITY
OR FITNESS FOR A PARTICULAR PURPOSE.
IN NO EVENT SHALL TI BE LIABLE FOR ANY CONSEQUENTIAL, SPECIAL, INDIRECT,
INCIDENTAL, OR PUNITIVE DAMAGES, HOWEVER CAUSED, ARISING IN ANY WAY OUT OF
YOUR USE OF THE CSM OR THIS DEVICE, WHETHER OR NOT TI HAS BEEN ADVISED OF THE
POSSIBILITY OF SUCH DAMAGES. EXCLUDED DAMAGES INCLUDE, BUT ARE NOT LIMITED
TO LOSS OF DATA, LOSS OF GOODWILL, LOSS OF USE OR INTERRUPTION OF BUSINESS OR
OTHER ECONOMIC LOSS.

7.12 Timers
CPU-Timers 0, 1, and 2 are identical 32-bit timers with presettable periods and with 16-bit clock prescaling. The
timers have a 32-bit count-down register that generates an interrupt when the counter reaches zero. The counter
is decremented at the CPU clock speed divided by the prescale value setting. When the counter reaches zero, it
is automatically reloaded with a 32-bit period value.
CPU-Timer 0 is for general use and is connected to the PIE block. CPU-Timer 1 is also for general use and is
connected to INT13 of the CPU. CPU-Timer 2 is reserved for TI-RTOS. It is connected to INT14 of the CPU. If
TI-RTOS is not being used, CPU-Timer 2 is available for general use.
CPU-Timer 2 can be clocked by any one of the following:
• SYSCLK (default)
• Internal zero-pin oscillator 1 (INTOSC1)
• Internal zero-pin oscillator 2 (INTOSC2)
• X1 (XTAL)
• AUXPLLCLK
7.13 Nonmaskable Interrupt With Watchdog Timer (NMIWD)
The NMIWD module is used to handle system-level errors. There is an NMIWD module for each CPU. The
conditions monitored are:
• Missing system clock due to oscillator failure
• Uncorrectable ECC error on CPU access to flash memory
• Uncorrectable ECC error on CPU, CLA, or DMA access to RAM
• Vector fetch error on the other CPU
• CPU1 only: Watchdog or NMI watchdog reset on CPU2
If the CPU does not respond to the latched error condition, then the NMI watchdog will trigger a reset after a
programmable time interval. The default time is 65536 SYSCLK cycles.

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7.14 Watchdog
The watchdog module is the same as the one on previous TMS320C2000™ MCUs, but with an optional lower
limit on the time between software resets of the counter. This windowed countdown is disabled by default, so the
watchdog is fully backwards-compatible.
The watchdog generates either a reset or an interrupt. It is clocked from the internal oscillator with a selectable
frequency divider.
Figure 7-5 shows the various functional blocks within the watchdog module.

WDCR(WDPS(2:0)) WDCR(WDDIS)

WDCNTR(7:0)

WDCLK Watchdog 8-bit 1-count

(INTOSC1)
/512 Overflow
Prescaler Watchdog delay
Counter
SYSRSn
Clear
Count

WDWCR(MIN(7:0))
WDKEY(7:0) Watchdog
Watchdog Window
Good Key Out of Window
Key Detector Detector
Bad Key
55 + AA

WDRSTn
Generate
512-WDCLK
WDINTn Watchdog Time-out
Output Pulse

SCSR(WDENINT)

Figure 7-5. Windowed Watchdog

7.15 Configurable Logic Block (CLB)

The C2000 configurable logic block (CLB) is a collection of blocks that can be interconnected using software to
implement custom digital logic functions or enhance existing on-chip peripherals. The CLB is able to enhance
existing peripherals through a set of crossbar interconnections, which provide a high level of connectivity to
existing control peripherals such as enhanced pulse width modulators (ePWM), enhanced capture modules
(eCAP), and enhanced quadrature encoder pulse modules (eQEP). The crossbars also allow the CLB to be
connected to external GPIO pins. In this way, the CLB can be configured to interact with device peripherals to
perform small logical functions such as comparators, or to implement custom serial data exchange protocols.
Through the CLB, functions that would otherwise be accomplished using external logic devices can now be
implemented inside the MCU.
The CLB peripheral is configured through the CLB tool. For more information on the CLB tool, available
examples, application reports and users guide, please refer to the following location in your C2000Ware package
(C2000Ware_2_00_00_03 and higher):
• C2000WARE_INSTALL_LOCATION\utilities\clb_tool\clb_syscfg\doc
• CLB Tool User's Guide
• Designing With the C2000™ Configurable Logic Block (CLB) Application Report
• How to Migrate Custom Logic From an FPGA/CPLD to C2000™ Microcontrollers Application Report
The CLB module and its interconnects are shown in Figure 7-6.

Figure 7-6. CLB Overview

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Absolute encoder protocol interfaces are now provided as Position Manager solutions in the C2000Ware
MotorControl SDK. Configuration files, application programmer interface (API), and use examples for such
solutions are provided with C2000Ware MotorControl SDK. In some solutions, the TI-configured CLB is used
with other on-chip resources, such as the SPI port or the C28x CPU, to perform more complex functionality. See
Table 4-1 for the devices that support the CLB feature.

7.16 Functional Safety

TMS320C2000™ MCUs are equipped with a TI release validation-based C28x and CLA Compiler Qualification
Kit (CQ-Kit), which is available for free and may be requested at the Compiler Qualification Kit web page.
Additionally, C2000™ MCUs are supported by the TI C2000 Support from Embedded Coder from MathWorks®
to generate C2000-optimized code from a Simulink® model. Simulink® enables Model-Based Design to ease the
systematic compliance process with certified tools, including Embedded Coder®, Simulink® model verification
tools, Polyspace® code verification tools, and the IEC Certification Kit for ISO 26262 and IEC 61508 compliance.
For more information, see the How to Use Simulink for ISO 26262 Projects article.
The Error Detection in SRAM Application Report provides technical information about the nature of the SRAM
bit cell and bit array, as well as the sources of SRAM failures. It then presents methods for managing memory
failures in electronic systems. This discussion is intended for electronic system developers or integrators who
are interested in improving the robustness of the embedded SRAM.
Functional Safety-Compliant products are developed using an ISO 26262/IEC 61508-compliant hardware
development process that is independently assessed and certified to meet ASIL D/SIL 3 systematic capability
(see certificate). The TMS320F2837D, TMS320F2837xS, and TMS320F2807x MCUs have been certified to
meet a component-level random hardware capability of ASIL B/SIL 2 (see certificate).
The Functional Safety-Compliant enablers include:
• A Functional Safety Manual
• A detailed, tunable, quantitative Failure Modes, Effects, and Diagnostics Analysis (FMEDA)
• A software diagnostic library that will help shorten the time to implement various software safety mechanisms
• A collection of application reports to help in the development of functionally safe systems.
A functional safety manual that describes all of the hardware and software functional safety mechanisms is
available. See the Safety Manual for TMS320F2837xD, TMS320F2837xS, and TMS320F2807x.
A detailed, tunable, fault-injected, quantitative FMEDA that enables the calculation of random hardware
metrics—as outlined in the International Organization for Standardization ISO 26262 and the International
Electrotechnical Commission IEC 61508 for automotive and industrial applications, respectively—is also
available. This tunable FMEDA must be requested; see the C2000™ Package for Automotive and Industrial
MCUs User's Guide.
• A white paper outlining the value (or benefit) of a tunable FMEDA is available. See the Functional Safety: A
tunable FMEDA for C2000™ MCUs publication.
• Parts 1 and 2 of a five-part FMEDA tuning training are available. See the C2000™ Tunable FMEDA Training
page.
Parts 3, 4, and 5 are packaged with the tunable FMEDA, and must be requested.
The C2000 Diagnostic Software Library is a collection of different safety mechanisms designed to detect
faults. These safety mechanisms target different device components, including the C28x core, the control law
accelerator (CLA), system control, static random access memory (SRAM), flash, and communications and
control peripherals. The software safety mechanisms leverage available hardware safety features such as the
C28x hardware built-in self-test (HWBIST); error detection and correction functionality on memories; parallel
signature analysis circuitry; missing clock detection logic; watchdog counters; and hardware redundancy.
Also included are software functional safety manual, user guides, example projects, and source code to help
users shorten system integration time. The library package includes a compliance support package (CSP), a
series of documents that TI used to develop and test the diagnostic software library. The CSP provides the
necessary documentation and reports to assist users with compliance to functional safety standards: software
safety requirements specifications; a software architecture document; software module design documents;
software module unit test plans; software module unit test documents; static analysis reports; unit test reports;
dynamic analysis reports; functional test reports; and traceability documents. Users can use these documents
to comply with route 1s (as described in IEC 61508-3, section 7.4.2.12) to reuse a preexisting software element
to implement all or part of a safety function. The contents of the CSP could also help users make important
decisions for overall system safety compliance.

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Two application reports offer details about how to develop functionally safe systems with C2000 real-time control
devices:
• C2000™ Hardware Built-In Self-Test discusses the HWBIST safety mechanism, along with its functions
and features, in the F2807x/F2837xS/F2837xD series of C2000 devices. The report also addresses some
system-level considerations when using the HWBIST feature and explains how customers can use the
diagnostic library on their system.
• C2000™ CPU Memory Built-In Self-Test describes embedded memory validation using the C28x central
processing unit (CPU) during an active control loop. It discusses system challenges to memory validation as
well as the different solutions provided by C2000 devices and software. Finally, it presents the Diagnostic
Library implementations for memory testing.

8 Applications, Implementation, and Layout

8.1 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.

8.2 Key Device Features

Table 8-1. Key Device Features
MODULE FEATURE SYSTEM BENEFIT
C28x PROCESSING
TI’s two 32-bit C28x DSP cores, provides 400 MHz of signal-
processing performance for floating- or fixed-point code running from
either on-chip flash or SRAM
Provides 400 MHz of signal-processing performance for floating- or
fixed-point code running from either on-chip flash or SRAM.
Up to 800 MIPS CLA: Allows user to execute time-critical control loops concurrently
Two C28x cores: 400 MIPS (2 x 200 MIPS) with main CPU
Two CLA cores: 400 MIPS (2 x 200 MIPS) FPU64: Native hardware support for IEEE-754 double-precision
Flash: Up to 1 MB (512KB on each C28x floating-point operations
Real-time control TMU: Accelerators used to speed up execution of trigonometric and
CPU)
CPUs
RAM : Up to 204 KB arithmetic operations for faster computation (such as PLL and DQ
64-bit Floating Point Unit (FPU64) transform) optimized for control applications. Helps in achieving faster
Trigonometric Math Unit (TMU) control loops, resulting in higher efficiency and better component
CRC engine and instructions (VCRC) sizing.
Special instructions to support nonlinear PID control algorithms
VCRC: Provides a straightforward method for verifying data integrity
over large data blocks, communication packets, or code sections.
See Real-time Benchmarks Showcasing C2000™ControlMCU's
Optimized Signal Chain.
SENSING
ADC provides precise and concurrent sampling of all three-phase
Four ADC modules currents and DC bus with zero jitter.
Analog-to-Digital 16-bit mode: (1.1 MSPS) ADC post-processing – On-chip hardware reduces ADC ISR
Converter (ADC) Single-ended mode: Up to 24 channels complexity and shortens current loop cycles.
(configurable 12-bit Differential mode : Up to 12 channels
or 16-bit) 12-bit mode: (3.5 MSPS) More ADCs help in multiphase applications. Provide better effective
Single-ended mode: Up to 24 channels MSPS (oversampling) and typical ENOB for better control-loop
performance.

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Table 8-1. Key Device Features (continued)

MODULE FEATURE SYSTEM BENEFIT

System protection without false alarms:

Comparator Subsystem (CMPSS) modules are useful for applications

CMPSS such as peak-current mode control, switched-mode power, power
8 windowed comparators factor correction, and voltage trip monitoring.
Three 12-bit DACs
Comparator 60-ns detection to trip time PWM trip-triggering and removal of unwanted noise are easy with
Subsystem blanking window and filtering features provided with the analog
DAC ramp generation
(CMPSS) comparator subsystems.
Low DAC output on external pin
Digital filters Provides better control accuracy. No need for further CPU
Slope compensation configuration to control the PWM with the comparator and 12-bit DAC
(CMPSS).

Enables protection and control using the same pin.

Enables galvanic isolation with reinforced delta sigma modulators.

SDFMs interface with external delta sigma modulator ADCs, which is
Up to 8 independently configurable digital
ideal for signals that may require isolation.
Sigma Delta Filter comparator filter channels
Comparator filter supports overcurrent and undercurrent protection but
Module (SDFM) Up to 8 independently configurable digital
tripping the PWM without CPU intervention
data filter channels
Digital data filter provides higher ENOBs for better control-loop
performance
Used for direct interface with a linear or rotary incremental encoder to
Enhanced get position, direction, and speed information from a rotating machine
Quadrature Encoder 3 eQEP modules used in a high-performance motion and position-control system. Also
Pulse (eQEP) can be used in other applications to count input pulses from an
external device (such as a sensor).

Applications for eCAP include:

6 eCAP modules
Measures elapsed time between events (up Speed measurements of rotating machinery (for example, toothed
to 4 time-stamped events). sprockets sensed through Hall sensors)
Enhanced Capture Connects to any GPIO through the input X- Elapsed time measurements between position sensor pulses
(eCAP) BAR.
When not used in capture mode, the eCAP Period and duty-cycle measurements of pulse train signals
module can be configured as a single- Decoding current or voltage amplitude derived from duty-cycle
channel PWM output (APWM). encoded current/voltage sensors

Table 8-1. Key Device Features (continued)

MODULE FEATURE SYSTEM BENEFIT
ACTUATION
Flexible PWM waveform generation with best power topology
Up to 24 ePWM channels coverage.
Ability to generate high-side/low-side PWMs Shadowed Dead band itself and shadowed action qualifier enable
with deadband adaptive PWM generation and protection for improved control
Supports Valley switching (ability to switch accuracy and reduced power loss.
PWM output at valley point) and features like Enables improvement in Power Factor (PF) and Total Harmonic
blanking window Distortion (THD), which is especially relevant in Power Factor
Correction (PFC) applications. Improves light load efficiency.

HRPWM capability:
16 channels provide high-resolution Beneficial for accurate control and enables better-performance high-
capability (150 ps) frequency power conversion.
Provides 150-ps steps for duty cycle, period, Achieves cleaner waveforms and avoids oscillations/limit cycle at
deadband, and phase offsets for 99% greater output.
precision

Critical for variable-frequency and multiphase DC-DC applications and

One-shot and global reload feature helps in attaining high-frequency control loops (>2 MHz).
Enhanced Pulse
Width Modulation Enables control of interleaved LLC topologies at high frequencies
(ePWM)/High-
Resolution Pulse Independent PWM action on a Cycle-by-
Width Modulation Provides cycle-by-cycle protection and complete shutoff of PWM under
Cycle (CBC) trip event and an One-Shot Trip fault condition. Helps implement multiphase PFC or DC-DC control.
(HRPWM)
(OST) trip event
Load on SYNC (support for shadow-to-active Enables variable-frequency applications (allows LLC control in power
load on a SYNC event) conversion).
Ability to shut down the PWMs without
Fast protection under fault condition
software intervention (no ISR latency)
Helps implement the deadband with Peak Current Mode Control
(PCMC) Phase-Shifted Full Bride (PSFB) DC-DC easily without
Delayed Trip Functionality occupying much CPU resources (even on trigger events based on
comparator, trip, or sync-in events).

Prevents simultaneous ON conditions of High- and Low-side gates by

Dead band Generator (DB) submodule adding programmable delay to rising (RED) and falling (FED) PWM
signal edges.

Each ePWM module can be synchronized with other ePWM modules

or other peripherals. Keeps PWM edges perfectly in synchronization
Flexible PWM Phase Relationships and with certain events.
Timer Synchronization Supports flexible ADC scheduling with specific sampling window in
synchronization with power device switching.

CONNECTIVITY
Serial Peripheral
3 high-speed SPI port Supports 50 MHz
Interface (SPI)
Serial
Communication 4 SCI (UART) modules Interfaces with controllers
Interface (SCI)

Controller Area 2 DCAN module

Network (CAN/ (can be assigned to Connectivity Manager Provides compatibility with classic CAN modules
DCAN) (M4))
Inter-Integrated
2 I2C modules Interfaces with external EEPROMs, sensors, or controllers
Circuit (I2C)
Multichannel
Buffered Serial Port Up to 2 McBSP modules Interface to high-speed external ADC or additional SPI peripheral
(McBSP)

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Table 8-1. Key Device Features (continued)

MODULE FEATURE SYSTEM BENEFIT
External Memory
Interfaces (EMIFs) Two EMIF modules, to have a dedicated
Interface with External ASRAM and SDRAM
with ASRAM and EMIF for each CPU subsystem.
SDRAM support
OTHER SYSTEM FEATURES
User customized PWM protection features, custom logic to off-load
complex algorithms/state machines, custom peripherals, and used to
implement absolute encoders used in servo drives
Collection of configurable blocks that can be User also used for protection of multilevel inverter/PFC or multilevel
Configurable Logic
inter-connected using software to implement DC-DC
Block (CLB)
custom digital logic functions Provides the ability to build logic around existing IPs like ETPWM,
ECAP, QEP and GPIOs.
Enables development of unique IP such as PWM Safety modules,
Encoder engines, and so forth.

DCSM: Prevents duplication and reverse-engineering of proprietary

code
Secure Boot: Uses AES128 CMAC algorithm to ensure code that runs
on the device is authentic
JTAGLOCK: Ability to block emulation of the device
AES acceleration: The hardware accelerator vastly improves the
Dual-zone Code Security Module (DCSM)
cycle time of processing cryptographic messages while freeing up the
Secure Boot
CPU bandwidth
JTAGLOCK
BGCRC: Checks memory integrity with no CPU overhead or system
BackGround CRC (BGCRC)
performance impact
Security enhancers Generic CRC (GCRC)
GCRC: Designated Connectivity Manager module for computing the
Watchdog
CRC value on a configurable block of memory
Write Protection on Register
Watchdog: Generates reset if CPU gets stuck in endless loops of
Missing Clock Detection Logic (MCD)
execution
Error Correction Code (ECC) and parity
Write Protection on Registers:
LOCK protection on system configuration registers
Protection against spurious CPU writes
MCD: Automatic clock failure detection
ECC and parity: Single-bit error correction and double-bit error
detection

Enhances hardware design versatility:

Provides flexibility to connect device inputs, Input X-BAR: Routes signals from any GPIO to multiple IP blocks
outputs, and internal resources in a variety of within the chip
configurations. Output XBAR: Routes internal signals onto designated GPIO pins
ePWM X-BAR: Routes internal signals from various IP blocks to
• Input X-BAR
Crossbars (XBARs) • Output X-BAR ePWM
CLB Input X-BAR: Allows user to route signals directly from any GPIO
• ePWM X-BAR
to Configurable Logic Block (CLB)
• CLB Input X-BAR
CLB Output X-BAR: Allows user to bring signals from CLB tiles to
• CLB Output X-BAR
designated GPIO pins
• CLB X-BAR
CLB X-BAR: Allows user to bring signals from various IP blocks to
CLB
The direct memory access (DMA) module provides a hardware method
Direct Memory
of transferring data between peripherals and/or memory without
Access (DMA) 12-channels
intervention from the CPU, thereby freeing up CPU bandwidth for other
controller
system functions.

Table 8-1. Key Device Features (continued)

MODULE FEATURE SYSTEM BENEFIT
Useful for system datalogging and boot to USB for updating on-chip
USB
flash

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8.3 Application Information

8.3.1 Typical Application
The Typical Applications section details some applications of this device. For a more extensive list of
applications, see the Applications section of this data sheet.
8.3.1.1 Servo Drive Control Module
Servo drives require high precision current and voltage sensing for accurate torque control and often supports
interfaces for multiple encoder types along with communication interfaces. This C2000 device can be used either
as single chip solution for standalone servo drive (shown in Figure 8-1) or can be used in decentralized systems
(shown in Figure 8-2). In the later case, the F2838x C2000 device functions as the controller which samples all
the voltage and current inputs and generates the correct PWM signals for inverter. Each C2000 device serves
as real-time controller for a target axis, running motor current control loop. Using the Fast Serial Interface (FSI)
peripheral, up to 16 axes can be managed with one C2000 device. As an outer loop controller, the C2000 device
executes main axis motor control, controls data exchange with all secondary axis over FSI and communicates
with a host or PLC through EtherCAT.
8.3.1.1.1 System Block Diagram
DC bus

VBUS
1A 2A 3A

400 F
VAC I
L
T External M
E Brake
R

1B 2B 3B

Absolute
IU Iv Iw VU Vv Vw Encoder
4 Iu Iv Iw Incremental
Encoder
Resolver

TMODULE

IDC

Absolute
1A 1B 2A 2B 3A 3B 4 Iu Iv Iw VU Vv Vw VBUS IDC TMODULE Resolver Encoder
PWM1

PWM3
PWM2

PWM4

Configurable logic
SAR ADC SDFM
block

Aux.
DC/DC
3V3
DC bus
3V3

Flash Fast Serial

C28x QEP
CLA Interface
SRAM

Incremental
Encoder

Figure 8-1. Servo Drive Control Module

CLK CLK A AH
FSITX1 FSIRX CPU1 PWM1
SCIA CPU1 DAT DAT B AL AH BH CH
FPU FPU A BH
TMU CLK CLK
FSITX TMU PWM2
FSITX2 B BL Ia(option)
DAT DAT
A CH Load
Option PWM3
B CL Ib
CLA1 TZ1
Ic
M
DMA
ADCA A1 CMP1 Ia
A 12-bit A2 AL BL CL Incremental
DMA1 EQEP Encoder
A AH B ADCB B1 CMP1 Ib
PWM1 I 12-bit B2
B AL
A BH ADCC C1 CMP1 Ic
PWM-2
+ Vdc
B BL 12-bit C2 Vdc -
BOOSTXL-3PHGANINV
ECAT C-M4 CH Node # 1 F28004x
A
PWM-3
B CL
TZ1

CPU2 ADCA A1 CMP1 Ia

FPU 12-bit A2
TMU ADCB B1 CMP2 Ib CLK A AH
12-bit B2 FSIRX CPU1 PWM1
DAT B AL AH BH CH
FPU A BH
F2838xD ADCC C1 CMP3 Ic CLK PWM2
CLA2 FSITX TMU B BL Ia(option)
12-bit C2 DAT
Master A CH Load
ADCD D1 CMP4 Vdc Option PWM3
12-bit D2 B CL Ib
DMA2 TZ1
Ic
M
A DMA
EQEP1 B ADCA A1 CMP1 Ia
I A 12-bit A2 AL BL CL Incremental
B EQEP ADCB B1 CMP1 Ib Encoder
I 12-bit B2
ADCC C1 CMP1 Ic + Vdc
AH BH CH 12-bit C2 Vdc -
BOOSTXL-3PHGANINV
Node # 2 F28004x

xxxxxx
Ia(option)
Load
Ib
Ic
M
CLK A AH
AL BL CL Incremental FSIRX CPU1 PWM1
DAT B AL AH BH CH
Encoder FPU A BH
CLK
FSITX TMU PWM2
B BL Ia(option)
DAT
+ Vdc A CH Load
- Option PWM3
IDDK B CL Ib
TZ1
Ic
M
DMA
ADCA A1 CMP1 Ia
A 12-bit A2 AL BL CL Incremental
B EQEP ADCB B1 CMP1 Ib Encoder
I 12-bit B2
ADCC C1 CMP1 Ic + Vdc
12-bit C2 Vdc -
BOOSTXL-3PHGANINV
Node # 3 F28004x

CLK A AH
FSIRX CPU1 PWM1
DAT B AL AH BH CH
FPU A BH
CLK
FSITX TMU PWM2
B BL
DAT Ia(option)
A CH Load
Option PWM3
B CL Ib
TZ1
Ic
M
DMA
ADCA A1 CMP1 Ia
A 12-bit A2 AL BL CL Incremental
B EQEP ADCB B1 CMP1 Ib Encoder
I 12-bit B2
ADCC C1 CMP1 Ic
Vdc
+ Vdc
12-bit C2 -
BOOSTXL-3PHGANINV
Node # 4 F28004x

Figure 8-2. Distributed Multi-Axis Servo Drive

8.3.1.1.2 Servo Drive Control Module Resources

Reference Designs and Associated Training Videos

48-V Three-Phase Inverter With Shunt-Based In-Line Motor Phase Current Sensing Evaluation Module
The BOOSTXL-3PHGANINV evaluation module features a 48-V/10-A three-phase GaN inverter with precision
in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives.
C2000 DesignDRIVE position manager BoosterPack™ plug-in module
The PositionManager BoosterPack is a flexible low voltage platform intended for evaluating interfaces to
absolute encoders and analog sensors like resolvers and SinCos transducers. When combined with the
DesignDRIVE Position Manager software solutions this low-cost evaluation module becomes a powerful tool
for interfacing many popular position encoder types such as EnDat, BiSS and T-format with C2000 Real-Time
Control devices. C2000 Position Manager technology integrates interfaces to the most popular digital and analog
position sensors onto C2000 Real-Time Controller, thus eliminating the need for external FPGAs for these
functions.
C2000Ware MotorControl SDK
MotorControl SDK for C2000™ microcontrollers (MCU) is a cohesive set of software infrastructure, tools, and
documentation designed to minimize C2000 real-time controller based motor control system development time
targeted for various three-phase motor control applications. The software includes firmware that runs on C2000
motor control evaluation modules (EVMs) and TI designs (TIDs) which are targeted for industrial drives, robotics,

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appliances, and automotive applications. MotorControl SDK provides all the needed resources at every stage of
development and evaluation for high performance motor control applications.
TIDM-02006 Distributed multi-axis servo drive over fast serial interface (FSI) reference design
This reference design presents an example distributed or decentralized multi-axis servo drive over Fast Serial
Interface (FSI) using C2000™ real-time controllers. Multi-axis servo drives are used in many applications such
as factory automation and robots. The cost per axis, performance and ease of use are always high concerns
for such systems. FSI is a cost-optimized and reliable high speed communication interface with low jitter that
can daisy-chain multiple C2000 microcontrollers. In this design, each TMS320F280049 or TMS320F280025
real-time controller serves as a real-time controller for a distributed axis, running motor current control loop. A
single TMS320F28388D runs position and speed control loops for all axes. The same F2838x also executes a
centralized motor control axis plus EtherCAT communication, leveraging its multiple cores. The design uses our
existing EVM kits, the software is released within C2000WARE MotorControl SDK.
TIDM-02007 Dual-axis motor drive using fast current loop (FCL) and SFRA on a single MCU reference design
This reference design presents a dual-axis motor drive using fast current loop (FCL) and software frequency
response analyzer (SFRA) technologies on a single C2000 controller. The FCL utilizes dual core (CPU, CLA)
parallel processing techniques to achieve a substantial improvement in control bandwidth and phase margin,
to reduce the latency between feedback sampling and PWM update, to achieve higher control bandwidth and
maximum modulation index, to improve DC bus utilization by the drive and to increase speed range of the motor.
The integrated SFRA tool enables developers to quickly measure the frequency response of the application to
tune speed and current controllers. Given the system-level integration and performance of C2000 series, MCUs
have the ability to support dual-axis motor drive requirements simultaneously that delivers very robust position
control with higher performance. The software is released within C2000Ware MotorControl SDK.
8.3.1.2 Solar Micro Inverter
A Solar Micro Inverter consists of a DC-AC inverter power stage and one or more Maximum Power Point
Tracking (MPPT) DC-DC power stages. Typical switching frequency for the inverter (DC-AC) is between
20kHz-50kHz and for DC-DC side can be in the range 100kHz-200kHz. A variety of power stage topologies
can be used to achieve this and the diagram only depicts a typical power stage and the control & communication
requirements. A C2000 microcontroller has on-chip EPWM, ADC and analog comparator modules to implement
complete digital control of such micro inverter system.

8.3.1.2.1 System Block Diagram

S3
Active Clamp Flyback with DC bus DC – AC
sec Voltage Multiplier Inverter

3B 2B S5

1A
Vgrid

PV I
27V – 45V

2A 3A
4 (Relay)

GND

S1 (S2)
interleaved
phases
S4

GND

Isolation
S6 S7

1A 1B 2A 2B 3A 3B 4 S1 S2 S3 S4 S5
PWM1

PWM3
PWM2

PWM4

ADC Comparators
Vref

Aux.
DC/DC
3V3
DC bus
3V3
Comms

SPI
GPIO UART C28x Flash QEP
CAN SRAM

Figure 8-3. Solar Micro Inverter

8.3.1.2.2 Solar Micro Inverter Resources

Reference Designs and Associated Training Videos

C2000™ MCUs - Digital Power (Video)
This training series covers the basics of digital power control and how to implement it on C2000 microcontrollers.
Four Key Design Considerations When Adding Energy Storage to Solar Power Grids
This white paper explores the design considerations in a grid-connected storage-integrated solar installation
system
C2000WARE-DIGITALPOWER-SDK
DigitalPower SDK for C2000™ microcontrollers (MCU) is a cohesive set of software infrastructure, tools, and
documentation designed to minimize C2000 MCU based digital power system development time targeted for
various AC-DC, DC-DC and DC-AC power supply applications. The software includes firmware that runs on
C2000 digital power evaluation modules (EVMs) and TI designs (TIDs) which are targeted for solar, telecom,
server, electric vehicle chargers and industrial power delivery applications. DigitalPower SDK provides all the
needed resources at every stage of development and evaluation in a digital power application

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Digitally Controlled Solar Micro Inverter Design using C2000™ Piccolo Microcontroller
This document presents the implementation details of a digitally-controlled solar micro inverter using the C2000
microcontroller. A 250-W isolated micro inverter design presents all the necessary PV inverter functions using
the Piccolo-B (F28035) control card. This document describes the power stages on the micro inverter board, as
well as an incremental build level system that builds the software by verifying open loop operation and closed
loop operation. This guide describes control structures and algorithms for controlling power flow, maximizing
power from the PV panel (MPPT), and locking to the grid using phase locked loop (PLL), along with hardware
details of Texas Instruments Solar Micro Inverter Kit (TMDSOLARUINVKIT)
TIDU405B Grid-tied Solar Micro Inverter with MPPT
This C2000 Solar Micro Inverter EVM hardware consists of two stages. These are: (1) an active clamp fly-back
DC/DC converter with secondary voltage multiplier and, (2) a DC-AC inverter. A block diagram of this system
is shown in Figure 1b. The DC-DC converter draws dc current from the PV panel such that the panel operates
at its maximum power transfer point. This requires maintaining the panel output, that is, the DC-DC converter
input at a level determined by the MPPT algorithm. The MPPT algorithm determines the panel output current
(reference current) for maximum power transfer. Then a current control loop for the fly-back converter ensures
that the converter input current tracks the MPPT reference current. The fly-back converter also provides high
frequency isolation for the DC-DC stage. The output of the fly-back stage is a high voltage DC bus which drives
the DC-AC inverter. The inverter stage maintains the DC bus at a desired set point and injects controlled sine
wave current into the grid. The inverter also implements grid synchronization in order to maintain its current
waveform locked to phase and frequency of the grid voltage. A C2000 piccolo microcontroller with its on-chip
PWM, ADC and analog comparator modules is able to implement complete digital control of such micro inverter
system.
Software Phase Locked Loop Design Using C2000™ Microcontrollers for Single Phase Grid Connected Inverter
Application Report
Grid connected applications require an accurate estimate of the grid angle to feed power synchronously to the
grid. This is achieved using a software phase locked loop (PLL). This application report discusses different
challenges in the design of software phase locked loops and presents a methodology to design phase locked
loops using C2000 controllers for single phase grid connection applications.
8.3.1.3 On-Board Charger (OBC)
An On-Board Charger (OBC) consists of two power stages: an AC-DC power converter and a subsequent
DC-DC power converter stage. The OBC can be implemented by using a single MCU to control both the
AC-DC and DC-DC power converters. For example: an 11-kW OBC can be implemented by using three 3.7-kW
single-phase OBC modules, as shown in Figure 8-4. This approach allows us to easily support both single-phase
240 AC (North America) and 3-phase AC (rest of the world).

OBC-charging design requirements are as follows:

• High-performance and fast digital control loops enabling highly efficient power conversion and increased
power density.
• Enabling precise control and fast shutdown in an overcurrent scenario by high bandwidth and fast response
current sensing.
• Safely and efficiently controlling and protecting the power switch [insulated-gate bipolar transistor/silicon
carbide (IGBT/SiC)].

8.3.1.3.1 System Block Diagram

HV Battery

–
+

–
Figure 8-4. 11 kW Modular OBC Power Topology (Unidirectional, bridge PFC)

8.3.1.3.2 OBC Resources

Reference Designs and Associated Training Videos

C2000 Digital Power Training videos
This power topology is capable of bidirectional power flow (PFC and grid-tied inverter) and uses GaN devices,
which enables higher efficiency and reduction in size of the power supply. The hardware and software available
with this reference design accelerates time to market.
C2000™ MCUs - Electric vehicle (EV) training videos (Video)
This collection of C2000™ MCU videos covers electric vehicle (EV)-specific training in both English and
Chinese.
PMP22650 GaN-based, 6.6-kW, bidirectional, onboard charger reference design
The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase
totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both
frequency and phase modulation to regulate the output across the required regulation range. The design
uses a single processing core inside a TMS320F28388D microcontroller to control both the PFC and CLLLC.
Synchronous rectification is implemented via the same microcontroller with Rogowski coil current sensors. High
density is achieved through the use of high-speed GaN switches (LMG3522). The PFC is operating at 120 kHz
and the CLLLC runs with a variable frequency from 200 kHz to 800 kHz. A peak system efficiency of 96.5% was
achieved with an open-frame power density of 3.8 kW/L. While the design calculations were done for a 6.6-kW
output power, the design represents a suitable starting point for a 7.x-kW (for example, 7.2-kW to 7.4-kW) rated
OBC operating from a 240-V input with a 32-A breaker.

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TIDUEG2C TIDM-02002 Bidirectional CLLLC resonant dual active bridge (DAB) reference design for HEV/EV
onboard charger
The CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an
ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage
applications. This design illustrates control of this power topology using a C2000™ MCU in closed voltage and
closed current-loop mode. The hardware and software available with this design help accelerate your time to
market.
TIDUEG3A TIDM-1022 Valley switching boost power factor correction (PFC) reference design
This reference design illustrates a digital control method to significantly improve Boost Power Factor Correction
(PFC) converter performance such as the efficiency and Total Harmonic Distortion (THD) under light load
condition where efficiency and THD standards are difficult to meet. This is achieved using the integrated digital
control feature of the C2000™ microcontroller (MCU). The design supports phase-shedding, valley-switching,
valley-skipping, and Zero Voltage Switching (ZVS) for different load and instantaneous input voltage conditions.
The software available with this reference design accelerates time to market.
8.3.1.4 EV Charging Station Power Module
The power module in a DC charging station consists of AC/DC power stage and DC/DC power stage. Each
converter associated with its power stage comprises of power switches and gate driver, current and voltage
sensing, and a real-time micro-controller. On the input side it has three-phase AC mains which are connected to
the AC/DC power stage. This block converts the incoming AC voltage into a fixed DC voltage of around 800 V.
This voltage serves as input to the DC/DC power stage which processes power and interfaces directly with the
battery on the electric vehicle. Each power stage has a separate real-time micro-controller which is responsible
for the processing of analog signals and providing fast control action.
The AC/DC stage (also known as the PFC stage) is the first level of power conversion in an EV charging station.
It converts the incoming AC power from the grid (380–415 VAC) into a stable DC link voltage of around 800 V.
The PFC stage maintains sinusoidal input currents, with typically a THD < 5%, and provides controlled DC
output voltage higher than the amplitude of the line-to-line input voltage. The DC/DC stage is the second level
of power conversion in an EV charging station. It converts the incoming DC link voltage of 800 V (in case of
three-phase systems) to a lower DC voltage to charge the battery of an electric vehicle. The DC/DC converter
must be capable of delivering rated power to the battery over a wide range with the capability of charging
the battery at constant current or at constant voltage modes, depending on the State Of Charge (SOC) of the
battery.

8.3.1.4.1 System Block Diagram

High Voltage Side (HV) Low Voltage Side (LV)

l_hv SiC MOSFETs SiC MOSFETs

1
2
+ Q1 1
2
1
2
+
Q3 Q5 Q5
Coupling
Inductor

1
2
Cap Bank Cap Bank
Output V_lv
Input

Planar 1
+ 1 Transformer 2 +
2 1 1
2 2
Q2 Q4 ls_tank Q6 Q8

PGND SGND
Primary side measurements
Secondary side measurements BENCH POWER SUPPLY
15 V

I_hv I_lv
AMC3302 OPA320 AMC3302

12 V
LM76003
Ip_tank F280049 Control Card I_ctl
TMDSCNCD280049C AMC3306

Is_tank

5V
V_lv
LMZ31707

GND
1
2
RST PWM FLT
Q1 UCC21530 3 3.3 V
4 TLV1117LV33
Q2 UCC21530 Q5
ISO7721 X 2
Power architecture
Q3 Q6
ISO7721 X 2
Q4 TPS7B6950Q SN6501 Q7

SN6501 TPS7B6950Q Q8
PWM Primary side gate driver cards 5V

PWM Secondary side gate driver cards 5V

Figure 8-5. Dual-active-bridge DC/DC converter

8.3.1.4.2 EV Charging Station Power Module Resources

Reference Designs and Associated Training Videos

TIDM-02002 CLLLC resonant dual active bridge for HEV/EV onboard charger (Video)
The CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an
ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage
applications. This design illustrates control of this power topology using a C2000™ MCU in closed voltage and
closed current-loop mode. The hardware and software available with this design help accelerate your time to
market.
TIDA-01606 10-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design
This reference design provides an overview on how to implement a bidirectional three-level, three-phase, SiC-
based active front end (AFE) inverter and PFC stage. The design uses a switching frequency of 50 kHz and a
LCL output filter to reduce the size of the magnetics. A peak efficiency of 99% is achieved. The design shows
how to implement a complete three phase AFE control in the DQ domain. The control and software is validated
on the actual hardware and on hardware in the loop (HIL) setup.
TIDA-010210 11-kW, bidirectional, three-phase ANPC based on GaN reference design
This reference design provides a design template for implementing a three-level, three-phase, gallium nitride
(GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at
a higher frequency of 100 kHz, reducing the size of magnetics for the filter and increasing the power density of
the power stage. The multilevel topology allows the use of 600-V rated power devices at higher DC bus voltages
of up to 1000 V. The lower switching voltage stress reduces switching losses, resulting in a peak efficiency of
98.5%

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TIDA-010054 Bi-directional, dual active bridge reference design for level 3 electric vehicle charging stations
This reference design provides an overview on the implementation of a single-phase Dual Active Bridge (DAB)
DC/DC converter. DAB topology offers advantages like soft-switching commutations, a decreased number of
devices and high efficiency. The design is beneficial where power density, cost, weight, galvanic isolation,
high-voltage conversion ratio, and reliability are critical factors, making it ideal for EV charging stations and
energy storage applications. Modularity and symmetrical structure in the DAB allow for stacking converters to
achieve high power throughput and facilitate a bidirectional mode of operation to support battery charging and
discharging applications.
C2000™ MCUs - Electric vehicle (EV) training videos (Video)
This collection of C2000™ MCU videos covers electric vehicle (EV)-specific training in both English and
Chinese.
Maximizing power for Level 3 EV charging stations
This explains how C2000's rich portfolio provide optimal solutions that help engineers solve design challenges
and implement advanced power topologies.
Power Topology Considerations for Electric Vehicle Charging Stations Application Report
This Application Report discusses the topology consideration for designing power modules that acts as a
building block for design of these fast DC Charging Station.
TIDUEG2C TIDM-02002 Bidirectional CLLLC resonant dual active bridge (DAB) reference design for HEV/EV
onboard charger
The CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an
ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage
applications. This design illustrates control of this power topology using a C2000™ MCU in closed voltage and
closed current-loop mode. The hardware and software available with this design help accelerate your time to
market.
TIDM-1000 Vienna Rectifier-Based Three Phase Power Factor Correction Reference Design Using C2000 MCU
The Vienna rectifier power topology is used in high-power, three-phase power factor correction applications such
as off-board electric vehicle charging and telecom rectifiers. This design illustrates how to control a Vienna
rectifier using a C2000 MCU.
8.3.1.5 High-Voltage Traction Inverter
The traction drive subsystem is designed to drive an AC induction motor or some combination of interior
permanent magnet synchronous motor (IPMSM) and synchronous reluctance motor (SynRM). A high-bandwidth,
field-oriented control (FOC) scheme with dynamic decoupling is implemented with a C2000 real-time control
MCU together with field-weakening and over-modulation techniques to driver motor to industry-leading high
speed up to 20,000 RPM, which can enable cost and weight reduction to the traction motor.
A traction drive system normally uses a variable reluctance (VR) resolver, which matches the pole count of the
motor, to directly measure the electric angle of the rotor. Resolver-to-digital conversion (RDC) is required to
measure position and speed using the resolver signal. RDC is traditionally handled by a separate IC, such as
PGA411-Q1. With a C2000 MCU, RDC for a high-speed traction inverter can be integrated into the main control
MCU, where the excitation generation can be handled with the DMA without CPU involvement, and feedback is
read through the ADC and decoded with the CPU.

A Phase-Shifted Full Bride (PSFB) topology allows the switching devices to switch with zero-voltage switching
(ZVS), resulting in lower switching losses and higher efficiency. Peak Current Mode Control (PCMC) is a
highly desired control scheme for power converters because of its inherent voltage feed forward, automatic
cycle-by-cycle current limiting, flux balancing, and other advantages, which require generating complex PWM
drive waveforms along with fast and efficient control loop calculations. This is made possible on C2000
microcontrollers by advanced on-chip control peripherals like PWM modules, analog comparators with DAC
and slope compensation hardware, and 12-bit high-speed ADCs coupled with an efficient 32-bit CPU.
Figure 8-6 shows a high-level block diagram of a single C2000™ real-time MCU controlling both an HEV/EV
traction inverter and a bidirectional DC-DC converter.

8.3.1.5.1 System Block Diagram

ENDRV

Intended
Function

Safety Function

TCAN4550-Q1 Torque MiBSPI2

Resolver
ADC
FDBK

Power Stage
nPORRST TMS570
nRES BusVoltage(VdcBus) / Phase Current/
ADC/GPIO
OverTemp/ OVP
PMIC
Power
TPS65381A-Q1
CAN FD

Q&A MiBSPI3

nERROR/WDI CAN ASC_En IGBTs

nERROR
2 ASC_H/L
NHET
Torque

16 MHz 4 nFLT_H/L_1/2

Gate Engine
Driver
GPIO+MOSFET 2x ERRORSTS
and
Protection for FFI TCAN1042 Protection for FFI
Isolation
Torque

XRSn
6 PWM Output
ePWM/CLB

CAN
3 PWM feedback
eCAP
10 MHz
4 Gate Driver Control & BIST
SPI3

Safe State
Activation ADC/
BusVoltage(VdcBus) / Phase Current/
CMPSS/ AFE
OverTemp/ OVP
GPIO

nFLT1_HL
Vdc_OVP
C28x CPU CLB
Over-speed I_OCP
3
Power Supply Power

EXC
C2000 real-time control MCU
PWM EXC

Resolver Resolver
ADC SIN Resolver
FDBK AFE

COS

ADC/ ADC/
PWM GPIO nFLT_DCDC_OV
CMPSS CMPSS

ENDRV nFLT_DCDC_OV
Vout_DCDC

ISO
ISO Gate
gate AFE
AFE EN driver
driver

HV
Battery
LV
Battery

Figure 8-6. Traction Inverter High Voltage

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

8.3.1.5.2 High-Voltage Traction Inverter Resources

Reference Designs and Associated Training Videos

TIDM-02009 ASIL D Safety Concept-Assessed High-Speed Traction, Bi-directional DC/DC Conversion
Reference Design
This reference design demonstrates control of HEV/EV traction inverter and bi-directional DC-DC converter by a
single TMS320F28388D real-time C2000™ MCU. The traction control uses a software-based resolver to digital
converter (RDC) driving the motor to a high speed up to 20,000 RPM. The DC-DC converter uses peak current
mode control (PCMC) technique with phase-shifted full-bridge (PSFB) topology and synchronous rectification
(SR) scheme. The traction inverter stage uses silicon carbide (SiC) power stage, driven by UCC5870-Q1 smart
gate driver. PCMC waveform is generated using state-of-the-art PWM module and built-in slope compensation
in the comparator sub-system (CMPSS). An ASIL decomposition based functional safety concept for the system
has been assessed with TÜV SÜD to demonstrate system level safety integrity level up to ISO 26262 ASIL D for
representative safety goals.
C2000™ MCUs - Electric vehicle (EV) | TI.com Training Series (Video)
This collection of C2000™ MCU videos covers electric vehicle (EV)-specific training in both English and
Chinese.
PSFB Control Using C2000 Microcontrollers Application Report
This application report presents the implementation details of a digitally controlled PSFB system implemented on
the high voltage phase shifted full bridge (HVPSFB) kit from Texas Instruments. This kit converts a 400 V DC
input to a regulated 12 V DC output and is rated for operations up to 600W. Both peak current mode control
(PCMC) and voltage mode control (VMC) implementations are described.
TIDA-BIDIR-400-12 Bidirectional DC-DC Converter
This document presents the details of this microcontroller-based implementation of an isolated bidirectional
DC-DC converter. A phase-shifted full-bridge (PSFB) with synchronous rectification controls power flow from a
400-V bus or battery to the 12-V battery in step-down mode, while a push-pull stage controls the reverse power
flow from the low-voltage battery to the high-voltage bus or battery in boost mode. This design is rated for up to
300 W of output power in either mode.
TIDM-02014 High-power, high-performance automotive SiC traction inverter reference design
TIDM-02014 is a 800-V, 300kW SiC-based traction inverter system reference design developed by Texas
Instruments and Wolfspeed provides a foundation for design engineers to create high-performance, high-
efficiency traction inverter systems and get to market faster. This solution demonstrates how the traction
inverter system technology from TI and Wolfspeed improves system efficiency by reducing the overshoot in
available voltages with a high-performance isolated gate driver and real-time variable gate drive strength driving
the Wolfspeed SiC power module. TI's high-control performance MCUs featuring tightly-integrated, innovative
real-time peripherals enable effective traction motor control even at speeds greater than 20,000 RPM. Fast
current loop implementation helps minimize motor torque ripple and provides smooth speed-torque profiles. The
mechanical and thermal design of the system is provided by Wolfspeed.

9 Device and Documentation Support

9.1 Device and Development Support Tool Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all
TMS320™ MCU devices and support tools. Each TMS320 MCU commercial family member has one of three
prefixes: TMX, TMP, or TMS (for example, TMS320F28379D). Texas Instruments recommends two of three
possible prefix designators for its support tools: TMDX and TMDS. These prefixes represent evolutionary stages
of product development from engineering prototypes (with TMX for devices and TMDX for tools) through fully
qualified production devices and tools (with TMS for devices and TMDS for tools).
Device development evolutionary flow:
TMX Experimental device that is not necessarily representative of the final device's electrical specifications
TMP Final silicon die that conforms to the device's electrical specifications but has not completed quality and reliability
verification
TMS Fully qualified production device

Support tool development evolutionary flow:

TMDX Development-support product that has not yet completed Texas Instruments internal qualification testing
TMDS Fully qualified development-support product

TMX and TMP devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
TMS devices and TMDS development-support tools have been characterized fully, and the quality and reliability
of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (TMX or TMP) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system because their
expected end-use failure rate still is undefined. Only qualified production devices are to be used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package
type (for example, PTP) and temperature range (for example, T). Figure 9-1 provides a legend for reading the
complete device name for any family member.
For device part numbers and further ordering information, see the TI website (www.ti.com) or contact your TI
sales representative.
For additional description of the device nomenclature markings on the die, see the TMS320F2837xD Dual-Core
Real-Time MCUs Silicon Errata .

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

Figure 9-1. Device Nomenclature

9.2 Markings
Figure 9-2 provides an example of the 2837xD device markings and defines each of the markings. The device
revision can be determined by the symbols marked on the top of the package as shown in Figure 9-2. Some
prototype devices may have markings different from those illustrated.

YMLLLLS = Lot Trace Code

YM = 2-Digit Year/Month Code

LLLL = Assembly Lot
TMS320 S = Assembly Site Code
$$ = Wafer Fab Code as applicable
F28379DPTPT # = Silicon Revision Code
$$#-YMLLLLS G4 = Green (Low Halogen and RoHS-compliant)
G4

Package
Pin 1

Figure 9-2. Example of Device Markings

Table 9-1. Determining Silicon Revision From Lot Trace Code

REVID(1)
SILICON REVISION CODE SILICON REVISION COMMENTS
Address: 0x5D00C
Blank 0 0x0000 This silicon revision is available as TMX.
A A 0x0000 This silicon revision is available as TMX.
B B 0x0002 This silicon revision is available as TMX.
C C 0x0003 This silicon revision is available as TMS.

(1) Silicon Revision ID

9.3 Tools and Software

TI offers an extensive line of development tools. Some of the tools and software to evaluate the performance of
the device, generate code, and develop solutions are listed below. To view all available tools and software for
C2000™ real-time control MCUs, visit the C2000 real-time control MCUs – Design & development page.
Development Tools
F28379D controlCARD for C2000 Real time control development kits
The F28379D controlCARD from Texas Instruments is Position Manager-ready and an ideal product for initial
software development and short run builds for system prototypes, test stands, and many other projects that
require easy access to high-performance controllers. All C2000 controlCARDs are complete board-level modules
that utilize a HSEC180 or DIMM100 form factor to provide a low-profile single-board controller solution. The host
system needs to provide only a single 5V power rail to the controlCARD for it to be fully functional.
F28379D Experimenter Kit
C2000™ MCU Experimenter Kits provide a robust hardware prototyping platform for real-time, closed loop
control development with Texas Instruments C2000 32-bit microcontroller family. This platform is a great tool
to customize and prove-out solutions for many common power electronics applications, including motor control,
digital power supplies, solar inverters, digital LED lighting, precision sensing, and more.
Software Tools
C2000Ware for C2000 MCUs
C2000Ware for C2000 microcontrollers is a cohesive set of development software and documentation designed
to minimize software development time. From device-specific drivers and libraries to device peripheral examples,
C2000Ware provides a solid foundation to begin development and evaluation. C2000Ware is now the
recommended content delivery tool versus controlSUITE™.
Code Composer Studio™ (CCS) Integrated Development Environment (IDE) for C2000 Microcontrollers
Code Composer Studio is an integrated development environment (IDE) that supports TI's Microcontroller
and Embedded Processors portfolio. Code Composer Studio comprises a suite of tools used to develop and
debug embedded applications. It includes an optimizing C/C++ compiler, source code editor, project build
environment, debugger, profiler, and many other features. The intuitive IDE provides a single user interface
taking the user through each step of the application development flow. Familiar tools and interfaces allow
users to get started faster than ever before. Code Composer Studio combines the advantages of the Eclipse
software framework with advanced embedded debug capabilities from TI resulting in a compelling feature-rich
development environment for embedded developers.
Pin Mux Tool
The Pin Mux Utility is a software tool which provides a Graphical User Interface for configuring pin multiplexing
settings, resolving conflicts and specifying I/O cell characteristics for TI MPUs.
F021 Flash Application Programming Interface (API)
The F021 Flash Application Programming Interface (API) provides a software library of functions to program,
erase, and verify F021 on-chip Flash memory.
UniFlash Standalone Flash Tool
UniFlash is a standalone tool used to program on-chip flash memory through a GUI, command line, or scripting
interface.
C2000 Third-party search tool
TI has partnered with multiple companies to offer a wide range of solutions and services for TI C2000 devices.
These companies can accelerate your path to production using C2000 devices. Download this search tool to
quickly browse third-party details and find the right third-party to meet your needs.

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

Models
Various models are available for download from the product Tools & Software pages. These include I/O Buffer
Information Specification (IBIS) Models and Boundary-Scan Description Language (BSDL) Models. To view all
available models, visit the Models section of the Tools & Software page for each device.
Training
To help assist design engineers in taking full advantage of the C2000 microcontroller features and performance,
TI has developed a variety of training resources. Utilizing the online training materials and downloadable
hands-on workshops provides an easy means for gaining a complete working knowledge of the C2000
microcontroller family. These training resources have been designed to decrease the learning curve, while
reducing development time, and accelerating product time to market. For more information on the various
training resources, visit the C2000™ real-time microcontrollers design & development – Educational resources
site.
Specific F2837xD/F2837xS/F2807x hands-on training resources can be found within the C2000 Academy on TI
Resource Explorer.

9.4 Documentation Support

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
The current documentation that describes the processor, related peripherals, and other technical collateral is
listed below.
Errata
TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata describes known advisories on silicon and provides
workarounds.
Technical Reference Manual
TMS320F2837xD Dual-Core Real-Time Microcontrollers Technical Reference Manual details the integration, the
environment, the functional description, and the programming models for each peripheral and subsystem in the
2837xD microcontrollers.
CPU User's Guides
TMS320C28x CPU and Instruction Set Reference Guide describes the central processing unit (CPU) and the
assembly language instructions of the TMS320C28x fixed-point digital signal processors (DSPs). This Reference
Guide also describes emulation features available on these DSPs.
TMS320C28x Extended Instruction Sets Technical Reference Manual describes the architecture, pipeline, and
instruction set of the TMU, VCU-II, and FPU accelerators.
Peripheral Guides
C2000 Real-Time Control Peripherals Reference Guide describes the peripheral reference guides of the 28x
DSPs.
Tools Guides
TMS320C28x Assembly Language Tools v22.6.0.LTS User's Guide describes the assembly language tools
(assembler and other tools used to develop assembly language code), assembler directives, macros, common
object file format, and symbolic debugging directives for the TMS320C28x device.
TMS320C28x Optimizing C/C++ Compiler v22.6.0.LTS User's Guide describes the TMS320C28x C/C++
compiler. This compiler accepts ANSI standard C/C++ source code and produces TMS320 DSP assembly
language source code for the TMS320C28x device.
Application Reports
Semiconductor Packing Methodology describes the packing methodologies employed to prepare semiconductor
devices for shipment to end users.
Calculating Useful Lifetimes of Embedded Processors provides a methodology for calculating the useful lifetime
of TI embedded processors (EPs) under power when used in electronic systems. It is aimed at general
engineers who wish to determine if the reliability of the TI EP meets the end system reliability requirement.
An Introduction to IBIS (I/O Buffer Information Specification) Modeling discusses various aspects of IBIS
including its history, advantages, compatibility, model generation flow, data requirements in modeling the input/
output structures and future trends.
Serial Flash Programming of C2000™ Microcontrollers discusses using a flash kernel and ROM loaders for
serial programming a device.

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

9.5 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.6 Trademarks
PowerPAD™, C2000™, Code Composer Studio™, TMS320C2000™, TMS320™, controlSUITE™, and TI E2E™
are trademarks of Texas Instruments.
Bosch® is a registered trademark of Robert Bosch GmbH Corporation.
MathWorks®, Simulink®, Embedded Coder®, and Polyspace® are registered trademarks of The MathWorks, Inc.
All trademarks are the property of their respective owners.
9.7 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

9.8 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

10 Revision History
Changes from February 1, 2021 to February 20, 2024 (from Revision O (February 2021) to
Revision P (February 2024)) Page
• Changed document title from TMS320F2837xD Dual-Core Microcontrollers to TMS320F2837xD Dual-Core
Real-Time Microcontrollers.................................................................................................................................1
• Global: Changed the title of the errata from TMS320F2837xD Dual-Core MCUs Silicon Errata to
TMS320F2837xD Dual-Core Real-Time MCUs Silicon Errata. Changed the title of the Technical Reference
Manual from TMS320F2837xD Dual-Core Microcontrollers Technical Reference Manual to TMS320F2837xD
Dual-Core Real-Time Microcontrollers Technical Reference Manual.................................................................1
• Description section: Updated section................................................................................................................. 2
• Package Information table: Changed title of Device Information table to Package Information. Updated table
and footnotes......................................................................................................................................................2
• Device Comparison table: Updated Serial Communications Interface (SCI) – Type 0 with (UART
Compatible)........................................................................................................................................................ 6
• Pin Configuration and Functions section: Changed section title from Terminal Configuration and Functions to
Pin Configuration and Functions........................................................................................................................ 9
• Signal Descriptions table: Updated DESCRIPTION column of TRST and VDD. Updated PTP PIN NO. column
and PZP PIN NO. column of VSS.................................................................................................................... 16
• Input X-BAR figure: Updated figure.................................................................................................................. 44
• ESD Ratings – Commercial table: Updated part numbers............................................................................... 49
• ESD Ratings – Automotive table: Updated part numbers................................................................................ 49
• Device Current Consumption at 200-MHz SYSCLK table: Added values for RESET MODE.......................... 50
• Electrical Characteristics table: Moved parametric value of VHYSTERESIS (150 mV) from TYP column to
MIN column.......................................................................................................................................................55
• Power-on Reset figure: Updated figure............................................................................................................ 60
• Clocking System figure: Updated figure........................................................................................................... 62
• XTAL Oscillator Characteristics section: Added section................................................................................... 64
• XTAL Oscillator section: Changed section title from Crystal Oscillator to XTAL Oscillator. Updated section...66
• Crystal Oscillator Electrical Characteristics table: Updated table.....................................................................71
• Negative Resistance Variation at 10 MHz figure: Added figure........................................................................71
• Negative Resistance Variation at 20 MHz figure: Added figure........................................................................71
• Flash Parameters table: Updated table............................................................................................................ 74
• RAM Specifications section: Added section..................................................................................................... 75
• ROM Specifications section: Added section.....................................................................................................76
• EMIF Asynchronous Memory Switching Characteristics table: Updated Parameters 3, 10, 15, and 24. Added
"Maximum wait time-out condition" footnote.....................................................................................................94
• Analog Subsystem Block Diagram (100-Pin PZP) figure: Updated figure. ....................................................101
• ADC Characteristics (16-Bit Differential Mode) table: Updated TYP values of SNR, THD, SFDR, SINAD,
and ENOB.......................................................................................................................................................110
• ADC Characteristics (12-Bit Single-Ended Mode) table: Updated TYP values of SNR, THD, SFDR, SINAD,
and ENOB....................................................................................................................................................... 111
• Single-Ended Input Model Parameters section: Updated "These input models should be used along with
actual signal source impedance ..." paragraph...............................................................................................113
• ADC Timings for 12-Bit Mode figure: Updated figure..................................................................................... 116
• Comparator Electrical Characteristics table: Added MIN and MAX Hysteresis values. Added Power Supply
Rejection Ratio (PSRR)..................................................................................................................................123
• CMPSS DAC Static Electrical Characteristics section: Added "Figures not drawn to scale" Note. ...............124
• CMPSS DAC Dynamic Error section: Added section..................................................................................... 131
• Synchronization Chain Architecture figure: Updated figure............................................................................138
• SDFM Timing Requirements When Using Asynchronous GPIO (ASYNC) Option section: Updated WARNING
about SDFM Manchester Mode (Mode 2)...................................................................................................... 147

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

• I2C Electrical Data and Timing section: Added "To meet all of the I2C protocol timing specifications, the I2C
module clock must be configured in the range from 7 MHz to 12 MHz ..." Note. .......................................... 156
• I2C Timing Requirements table: Added footnote. ..........................................................................................156
• I2C Timing Diagram section: Added section title. ..........................................................................................157
• I2C Timing Diagram section: Removed duplicate "To meet all of the I2C protocol timing specifications, the I2C
module clock (Fmod) must be configured from 7 MHz to 12 MHz." Note. This Note is now in the I2C Electrical
Data and Timing section.................................................................................................................................157
• Overview section: Updated section................................................................................................................ 185
• EMIF Chip Select Memory Map table: Updated SIZE for "EMIF2_CS0n - Data". ......................................... 190
• Peripheral Registers Memory Map section: Added "None of the device peripherals have program bus
access" Note...................................................................................................................................................190
• Peripheral Registers Memory Map table: Added CLB registers..................................................................... 190
• Applications, Implementation, and Layout section: Updated section............................................................. 214
• Tools and Software section: Added C2000 Third-party search tool. Updated Training section......................232

11 Mechanical, Packaging, and Orderable Information

11.1 Packaging Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

PACKAGE OUTLINE
PZP0100N SCALE 1.000
PowerPAD TM TQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK

14.2
B
13.8
PIN 1 ID NOTE 3
100 76

1 75

14.2 16.2
TYP
13.8 15.8
NOTE 3

25
51

26
A 50 0.27
100X
96X 0.5 0.17
0.08 C A B
4X 12

SEATING PLANE

(0.127) SEE DETAIL A 1.2 MAX

TYP
26 50

25 51
0.25
GAGE PLANE (1)

8.64 0.15
101 0 -7 0.08 C 0.05
7.45
0.75
0.45
DETAIL A
TYPICAL

4X (0.3) 4X (0.3)
1 NOTE 4 75 NOTE 4

100 76
4223383/A 04/2017
PowerPAD is a trademark of Texas Instruments.
NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs.
4. Strap features may not be present.
5. Reference JEDEC registration MS-026.

www.ti.com DETAIL A
SCALE: 14

EXAMPLE BOARD LAYOUT

PZP0100N PowerPAD TM TQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK

( 12)
NOTE 10
( 8.64)
SYMM
SOLDER MASK
100 76 DEFINED PAD
100X (1.5)

1
75

100X (0.3)

96X (0.5)

101 (1) TYP

SYMM
(15.4)

(R0.05) TYP
25 51

( 0.2) TYP
VIA
26 50 METAL COVERED
SEE DETAILS (1) TYP BY SOLDER MASK

(15.4)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:5X
0.05 MAX 0.05 MIN
ALL AROUND ALL AROUND
METAL SOLDER MASK
OPENING
EXPOSED METAL

EXPOSED METAL
METAL UNDER
SOLDER MASK SOLDER MASK
OPENING

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
SOLDER MASK DETAILS
4223383/A 04/2017

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. This package is designed to be soldered to a thermal pad on the board. See technical brief, Powerpad thermally enhanced package,
Texas Instruments Literature No. SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004).
9. Vias are optional depending on application, refer to device data sheet. It is recommended that vias under paste be filled,
plugged or tented.
10. Size of metal pad may vary due to creepage requirement.

www.ti.com

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

EXAMPLE STENCIL DESIGN

PZP0100N PowerPAD TM TQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK

( 8.64)
BASED ON
0.125 THICK STENCIL

SYMM SEE TABLE FOR

DIFFERENT OPENINGS
100 76 FOR OTHER STENCIL
THICKNESSES
100X (1.5)

1
75

100X (0.3)

96X (0.5)

SYMM 101
(15.4)

(R0.05) TYP

25 51

METAL COVERED
BY SOLDER MASK
26 50
(15.4)

SOLDER PASTE EXAMPLE

EXPOSED PAD
100% PRINTED SOLDER COVERAGE BY AREA
SCALE:6X

STENCIL SOLDER STENCIL

THICKNESS OPENING
0.1 9.66 X 9.66
0.125 8.64 X 8.64 (SHOWN)
0.150 7.89 X 7.89
0.175 7.3 X 7.3

4223383/A 04/2017

NOTES: (continued)

11. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
12. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE
TM
PTP0176F SCALE 0.550
PowerPAD HLQFP - 1.6 mm max height
PLASTIC QUAD FLATPACK

24.2
NOTE 3 B
23.8
PIN 1 ID 176 133

1 132

24.2 26.2
TYP
23.8 25.8
NOTE 3

44
89
45
88 0.27
A 172X 0.5 176X
0.17
4X 21.5 0.08 C A B

SEATING PLANE

(0.13) SEE DETAIL A 1.6 MAX

TYP
45 88

44 89

0.25
4X 0.78 MAX (1.4)
GAGE PLANE
NOTE 4

4X
0.54 MAX 0.08 C 0.15
7.33 0 -7 0.05
177 NOTE 4
6.78
0.75
0.45
DETAIL A
4X TYPICAL
0.2 MAX EXPOSED
NOTE 4 THERMAL PAD

1 132

176 133
8.07
7.53
4223382/A 03/2017
PowerPAD is a trademark of Texas Instruments.
NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs.
4. Strap features my not present.
5. Reference JEDEC registration MS-026.

www.ti.com
DETAIL A
SCALE: 12

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

EXAMPLE BOARD LAYOUT

PTP0176F PowerPAD
TM
HLQFP - 1.6 mm max height
PLASTIC QUAD FLATPACK

(8.07)
SYMM
SOLDER MASK
176 133 DEFINED PAD
176X (1.45)

1
132
176X (0.3)

172X (0.5)

SYMM 177 (1.5 TYP)

(25.5)
(7.33)
( 22)
NOTE 10

(R0.05) TYP

( 0.2) TYP
VIA

44 89

SEE DETAILS

45 88 METAL COVERED
(1.5 TYP) BY SOLDER MASK
(25.5)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:4X
0.05 MAX 0.05 MIN
ALL AROUND ALL AROUND
METAL SOLDER MASK
OPENING

EXPOSED METAL EXPOSED METAL

SOLDER MASK METAL UNDER
OPENING SOLDER MASK

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
SOLDER MASK DETAILS
4223382/A 03/2017
NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. This package is designed to be soldered to a thermal pad on the board. See technical brief, Powerpad thermally enhanced package,
Texas Instruments Literature No. SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004).
9. Vias are optional depending on application, refer to device data sheet. It is recommended that vias under paste be filled, plugged
or tented.
10. Size of metal pad may vary due to creepage requirement.

EXAMPLE STENCIL DESIGN

PTP0176F PowerPAD
TM
HLQFP - 1.6 mm max height
PLASTIC QUAD FLATPACK

(8.07)
BASED ON
SYMM 0.125 THICK STENCIL
176 133
176X (1.45)

1
132

176X (0.3)

172X (0.5)

(25.5)
SYMM (7.33)
177
BASED ON
0.125 THICK
STENCIL
(R0.05) TYP

SEE TABLE FOR

DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES

44 89

METAL COVERED
BY SOLDER MASK 45 88
(25.5)

SOLDER PASTE EXAMPLE

EXPOSED PAD
100% PRINTED SOLDER COVERAGE BY AREA
SCALE:4X

STENCIL SOLDER STENCIL

THICKNESS OPENING
0.1 9.02 X 8.2
0.125 8.07 X 7.33 (SHOWN)
0.150 7.37 X 6.69
0.175 6.82 X 6.2

4223382/A 03/2017

NOTES: (continued)

www.ti.com

Product Folder Links: TMS320F28379D TMS320F28379D-Q1 TMS320F28378D TMS320F28377D TMS320F28377D-Q1 TMS320F28376D

TMS320F28375D TMS320F28374D
PACKAGE OPTION ADDENDUM

www.ti.com 2-Aug-2023

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

TMS320F28374DPTPS ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28374DPTPS
TMS320F28374DPTPT ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28374DPTPT
TMS320F28374DZWTS ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28374DZWTS
TMS320F28374DZWTT ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28374DZWTT
TMS320F28375DPTPS ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28375DPTPS
TMS320F28375DPTPT ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28375DPTPT
TMS320F28375DPZPS ACTIVE HTQFP PZP 100 90 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28375DPZPS
TMS320F28375DZWTS ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28375DZWTS
TMS320F28375DZWTT ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28375DZWTT
TMS320F28376DPTPS ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28376DPTPS
TMS320F28376DPTPT ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28376DPTPT
TMS320F28377DPTPQ ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28377DPTPQ
TMS320F28377DPTPS ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28377DPTPS
TMS320F28377DPTPT ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28377DPTPT
TMS320F28377DZWTQ ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28377DZWTQ
TMS320F28377DZWTQR ACTIVE NFBGA ZWT 337 1000 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28377DZWTQ
TMS320F28377DZWTS ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples

Addendum-Page 1
PACKAGE OPTION ADDENDUM

www.ti.com 2-Aug-2023

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
F28377DZWTS
TMS320F28377DZWTT ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28377DZWTT
TMS320F28378DPTPS ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28378DPTPS
TMS320F28379DPTPQ ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28379DPTPQ
TMS320F28379DPTPS ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28379DPTPS
TMS320F28379DPTPT ACTIVE HLQFP PTP 176 40 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28379DPTPT
TMS320F28379DZWTQR ACTIVE NFBGA ZWT 337 1000 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28379DZWTQ
TMS320F28379DZWTS ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 125 TMS320 Samples
F28379DZWTS
TMS320F28379DZWTT ACTIVE NFBGA ZWT 337 90 RoHS & Green SNAGCU Level-3-260C-168 HR -40 to 105 TMS320 Samples
F28379DZWTT

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Addendum-Page 2
PACKAGE OPTION ADDENDUM

www.ti.com 2-Aug-2023

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TMS320F28377D, TMS320F28377D-Q1, TMS320F28379D, TMS320F28379D-Q1 :

• Catalog : TMS320F28377D, TMS320F28379D

• Automotive : TMS320F28377D-Q1, TMS320F28379D-Q1
• Enhanced Product : TMS320F28377D-EP, TMS320F28377D-EP

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
• Enhanced Product - Supports Defense, Aerospace and Medical Applications

Addendum-Page 3
PACKAGE MATERIALS INFORMATION

www.ti.com 7-May-2024

TRAY

L - Outer tray length without tabs KO -

Outer
tray
height

W-
Outer
tray
width
Text

P1 - Tray unit pocket pitch

CW - Measurement for tray edge (Y direction) to corner pocket center
CL - Measurement for tray edge (X direction) to corner pocket center

Chamfer on Tray corner indicates Pin 1 orientation of packed units.

*All dimensions are nominal

Device Package Package Pins SPQ Unit array Max L (mm) W K0 P1 CL CW
Name Type matrix temperature (mm) (µm) (mm) (mm) (mm)
(°C)
TMS320F28374DPTPS PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28374DPTPT PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28374DZWTS ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28374DZWTT ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28375DPTPS PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28375DPTPT PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28375DPZPS PZP HTQFP 100 90 6 X 15 150 315 135.9 7620 15.4 20.3 21
TMS320F28375DZWTS ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28375DZWTT ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28376DPTPS PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28376DPTPT PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28377DPTPQ PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28377DPTPS PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28377DPTPT PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28377DZWTQ ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28377DZWTS ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28377DZWTT ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45

Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION

www.ti.com 7-May-2024

Device Package Package Pins SPQ Unit array Max L (mm) W K0 P1 CL CW

Name Type matrix temperature (mm) (µm) (mm) (mm) (mm)
(°C)
TMS320F28378DPTPS PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28379DPTPQ PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28379DPTPS PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28379DPTPT PTP HLQFP 176 40 4x10 150 315 135.9 7620 20.7 30.4 20.7
TMS320F28379DZWTS ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45
TMS320F28379DZWTT ZWT NFBGA 337 90 6 X 15 150 315 135.9 7620 20 17.5 15.45

Pack Materials-Page 2
PACKAGE OUTLINE
ZWT0337A SCALE 0.950
NFBGA - 1.4 mm max height
PLASTIC BALL GRID ARRAY

16.1 A
B
15.9

BALL A1 CORNER

16.1
15.9

1.4 MAX C

SEATING PLANE
0.45 BALL TYP
TYP 0.12 C
0.35

14.4 TYP
SYMM (0.8) TYP

V
U (0.8) TYP
T
R
P
N
M
14.4 L SYMM
TYP K
J
H
G 0.55
337X
F 0.45
E 0.15 C A B
D
0.05 C
C

B
A
0.8 TYP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

BALL A1 CORNER 0.8 TYP

4223381/A 02/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.

www.ti.com
EXAMPLE BOARD LAYOUT
ZWT0337A NFBGA - 1.4 mm max height
PLASTIC BALL GRID ARRAY

(0.8) TYP
337X ( 0.4)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
A
B
(0.8) TYP C

J
SYMM
K

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:7X

0.05 MAX METAL UNDER

( 0.4) 0.05 MIN
SOLDER MASK
METAL

EXPOSED METAL
SOLDER MASK ( 0.4)
EXPOSED METAL SOLDER MASK
OPENING
OPENING
NON-SOLDER MASK SOLDER MASK
DEFINED DEFINED
(PREFERRED)

SOLDER MASK DETAILS

NOT TO SCALE
4223381/A 02/2017

NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For information, see Texas Instruments literature number SPRAA99 (www.ti.com/lit/spraa99).

www.ti.com
EXAMPLE STENCIL DESIGN
ZWT0337A NFBGA - 1.4 mm max height
PLASTIC BALL GRID ARRAY

( 0.4) TYP
(0.8) TYP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
A
B
(0.8) TYP C

J
SYMM
K

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.15 mm THICK STENCIL
SCALE:7X

4223381/A 02/2017

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, regulatory or other requirements.
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an
application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license
is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you
will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these
resources.
TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with
such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for
TI products.
TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE

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