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Solution Manual to Accompany

Physics of
Semiconductor Devices
Fourth Edition

S. M. Sze
Yiming Li
Kwok K. Ng
National Chiao Tung University

Wiley-Interscience
Hoboken, Chichester, Brisbane, Toronto, Singapore
 Contents
Chapter 1 Physics and Properties of Semiconductors—A Review.................................................... 3

Chapter 2 p–n Junctions....................................................................................................................... 13

Chapter 3 Metal–Semiconductor Contacts......................................................................................... 21

Chapter 4 Metal–Insulator–Semiconductor Capacitors................................................................... 25

Chapter 5 Bipolar Transistors.............................................................................................................. 32

Chapter 6 MOSFETs............................................................................................................................. 36

Chapter 7 Nonvolatile Memory Devices............................................................................................. 44

Chapter 8 JFETs, MESFETs, and MODFETs.................................................................................... 48

Chapter 9 Tunnel Devices..................................................................................................................... 52

Chapter 10 IMPATT Diodes, TED, and RST Devices........................................................................ 56

Chapter 11 Thyristors and Power Devices.......................................................................................... 60

Chapter 12 LEDs and Lasers............................................................................................................... 64

Chapter 13 Photodetectors and Solar Cells........................................................................................ 68

Chapter 14 Sensors................................................................................................................................ 73
 1 PHYSICS AND PROPERTIES OF SEMICONDUCTORS—A REVIEW

Chapter 1 Physics and Properties of Semiconductors—A Review

1. (a) A unit cell contains 1/8 of a sphere at each corner of the eight corners, 1/2 of a sphere at each of the 6 faces, and 4 spheres
1 1 1 1 1
inside the cell → a total of --- × 8 + --- × 6 + 4 = 8 spheres. The diagonal distance between ( 0, 0, 0 ) and  --- a, --- a, --- a
8 2 4 4 4 
2 2 2
is d =  a--- +  a--- +  a--- = a--- 3 .
 4  4  4 4
d a
The radius of the hard sphere is --- = --- 3 .
2 8
3
4π a
8 ------  --- 3
3 8  π 3
∴ Max fraction = ---------------------------------- = ---------- = 34% .
a3 16

(b) On (111) plane

2 1/6
2a 3
l = ( 2a ) 2 –  --------- = --- a
 2 - 2
1/2
1 1
3 × --- + 3 × ---
Δ
------------------------------------------ = ------------------------------6- = ------------
No. of atoms in 2 2 - 1/2 l
= 7.83×1014 atoms/cm2.
area of Δ 1 ( 2a ) 3--- a 3 1/6
--- ------- a 2
2 2 2
1/2
1/6 2a
2. d1 + d2 + d3 + d4 = 0 d1 = d2 = d3 = d4 = d d1
d1 ⋅ ( d1 + d2 + d3 + d4 ) = d1 ⋅ 0 = 0
d 2 + d 2 ( cos θ 12 + cos θ 13 + cos θ 14 ) = d 2 + 3d 2 cos θ = 0
1
∴ cos θ = – 1---  θ = cos – 1  – --- = 109.47 ° d2
d4
3  3
d3

a a a a a a
3. V = a ⋅ b × c =  ---, 0, --- ⋅  ---, ---, 0 ×  0, ---, ---
2 2  2 2   2 2

 a a a a
 --- 0 0 --- --- ---  3
2 , 2, 2 2 2
a a a
2 2 a
=  a---, 0, a--- ⋅   = a
---, 0, a
--- ⋅  -----, – -----, ----- = ----
-
2 2  a--- a--- a--- a  2 2   4 4 4 4
 0 0 --- 
 2 2 2 2

2 a
4. (a) 1 a 2 2a
d = ---  --- +  ---------- a
2 2 2
2a 2 + a 2 = 3a
3
= ------- a
4
a

1 1 1 2a
(b) Intercept at 2a, 3a and 4a; reciprocal: ---, ---, --- . The plane is (643).
2 3 4

3
PHYSICS OF SEMICONDUCTOR DEVICES

5. (a) Let R be a vector in the direct lattice, then

G ⋅ R = 2π ( hm + kn + lp )
= 2πN d
d = distance when the vector R coincides with G
2πN R
= -----------
G
G
Let R have m' = m – Zl, n' = n – Zl, and p' = p + Z(h + k),
'
(a vector
Then G·R' = (ha∗ + kb∗ + lc∗)·{(m – Zl)a + (n –Zl)b + [p + Z(h + k)]c} in the
R'
= (hm + kn + lp) = 2πN (same as G·R) reciprocal
lattice)
Since R' is quite general, it can form a plane perpendicular to G.
Therefore G is normal to a set of planes in the direct lattice.

(b × c) ⋅ (c × a) × (a × b) ( 2π ) 3
(b) Volume in reciprocal lattice = ( 2π ) 3 ------------------------------------------------------------- = -------------
( a ⋅ b × c )3 VC

a(z + x) × a(x + y)
--- ---
b × c = 2π 2 2 4π (y – x + z) 4π ( y – x + z )
a ∗ = 2π ------------------
- --------------------------------------------------------------------------------------- = ------ ⋅ ---------------------------------------------- = ------ ⋅ -------------------------
a⋅b×c a(y + z) ⋅ a(z + x) × a(x + y) a (y + z) ⋅ (y – x + z) a (1 + 1)
--- --- ---
2 2 2
4π 1 4π
= ------ --- ( y + z – x ) → ------ (one of the vectors for bcc)
6. a 2 a
Similarly, for b∗ and c∗. ∴ Reciprocal of fcc is bcc.

k2 k2
7. ∴ E = ----x- + ----y- = constant = C
ml mt
k2
Let kx = 0, ∴ ----y- = C
mt
k2 k y2 /m t m∗ k2 5 2
Let ky = 0, ∴ ----x- = C ∴ ------------
- = 1 ∴ ------l = ----x2- =  --- = 25
ml k x2 /m l mt ky  1

6 --- ( 1.0 ) 3/2

 2
8. Ratio = --------------------------
- = 3 ( 10 ) 3/2 = 94.8
1 ( 0.1 ) 3/2

9. For a three dimensional structure such as a bulk semiconductor, to calculate the electron and hole concentrations in the con-
duction and valence bands, respectively. We need to know the density of states, that is, the number of allowed energy states
per unit energy per unit volume (i.e., in the unit of number of states/eV/cm3).
When electrons move back and forth along the x-direction in a semiconductor material, the movements can be described by
standing-wave oscillations. The wavelength λ of a standing wave is related to the length of the semiconductor L by
L/λ = n x , (1)
where nx is an integer. The wavelength can be expressed by de Broglie hypothesis
λ = h/k n , (2)
where h is the Planck's constant and kx is the momentum in the x-direction. Substituting Eq. 2 into Eq. 1 gives
Lk n = hn x . (3)

4
 1 PHYSICS AND PROPERTIES OF SEMICONDUCTORS—A REVIEW

The incremental momentum dkx required for a unity increase in nx is

Ldk n = h . (4)
For a three-dimensional cube of side L, Ldkxdkydkz = h3;
furthermore, The volume dkxdkydkz in the momentum space for a
3
unit cube (L = 1) is equal to h . Each incremental change in turn corresponds to a unique set of integers (nx, ny, nz), which
in turn corresponds to an allowed energy state. Thus, the volume in momentum space for an energy state is h3. The figure
below shows the momentum space in spherical coordinates. The volume between two concentric spheres (from k to k + dk)
is 4πk2dk. The number of energy states contained in the volume is then 2(4πk2dk)/h3, where the factor 2 accounts for the
electron spins. The energy E of the electron (here consider only the kinetic energy) is given by
k = 2m n E , (5)
where k is the total momentum (with components kx, ky, and kz in Cartesian coordinates) and mn is the effective mass. From
Eq. 5, we can substitute E for k and obtain
3 1
2 ---
2 --2-
8πk dk
N ( E )dE = -----------------
- = 4π  2m n
---------
- E dE (6)
h
3  2
h
and
3 1
---
2m n 2 --2-
N ( E ) = 4π  ---------
- E , (7)
 2
h
where N(E) is called the density of states.

The derivation of the two-dimensional density of states is almost the same. We calculate the number of k-states enclosed
within an annulus of radius k to k + dk instead. The area between two concentric circles is 2πkdk and the number of energy
states contained in the area is 2(2πkdk)/h2. The two-dimensional density of states is then given by
4πkdk m
- = 4π  -----n- dE
N ( E )dE = --------------- (8)
h
2  2
h
and
m
N ( E ) = 4π -----2n- (9)
h
Finally, the derivation of the one-dimensional density of states is calculated within a line. The wavelength λ of a standing
wave is related to the length L of semiconductor by
L
---------- = n x . (10)
λ⁄2
The incremental momentum dkx required for a unity increase in nx is
2Ldk x = h . (11)
dkx in momentum space for a line with unit length is h/2 and the number of energy states contained in the line is 2dk/(h/2).
The one-dimensional density of states is
2dk 2m
N ( E )dE = ---------- = 2 ---------n- 1
--- dE (12)
h⁄2 E h
and
2m 1
N ( E ) = 2 ---------n- --- . (13)
E h

5
PHYSICS OF SEMICONDUCTOR DEVICES

 
∞ ∞
– ( E – E )/kT
10. ( E – E C )N ( E )F ( E ) dE ( E – E C ) ( E – E C ) 1/2 e F dE
0 0
 KE = -------------------------------------------------------------
- = -------------------------------------------------------------------------------------------

 
∞ ∞ – ( E – E F )/kT
N ( E )F ( E ) dE ( E – E C ) 1/2 e dE
0 0 E – E C = y, dy = dE

 
∞ ∞
5 3 1
y 3/2 e – y/kT dy kT z 3/2 e – z dz kT Γ  --- kT  ---  --- π
 2  2  2
0
= ------------------------------------ 0
- = --------------------- = -------------------------------- = 3
= ----------------------------------- --- kT

 
∞ ∞ 2
3 1
y 1/2 e – y/kT dy z 1/2 e – z dz Γ  --- --- π
0 y/kT = z 0
 2   2 

11.
ND
N D+ = ----------------------------------------------
- (14)
 E F – E D
1 + 2 exp -------------------
 kT 
At 77K,
3/2
77
N C = N C  ---------
19 18
= 2.8 ×10 ( 0.13 ) = 3.64 ×10 cm –3 (15)
 300

77  = 0.006648 eV
kT = 0.0259  -------- (16)
 300-

NC ×10
18
- = 0.006648 ln 3.64
E C – E F = kT ln --------------- -----------------------
- (Let N D = 10 16 )
ND ( T )
+
10 16
= 0.00648 ln ( 364 ) = 0.0392 eV (17)
From Fig. 10 in textbook, we know that for phosphorous in Si, EC − ED ≈ 0.045 eV.
Thus, from Eq. 14, we have
10 16 10 16
N D+ = --------------------------------------------------------------------- = -----------------------------------------
1 + 2 exp ( +0.87 )
1 + 2 exp  –----------------------------------------
0.0392 + 0.045
 0.006648  10×1015 10×1015
10 16 15
= ------------------- = 1.73 ×10 cm –3 ( < 10 16 cm –3 )
1 + 4.78
N D+ (cal) = N D+ (selected)
We select a new N D+ value, repeat the process and eventually obtain N D+

ND(77) ≈ 3.6×1015 cm–3. (calculated)

4.72 5×1015
 3.64 ×1018
- ≈ 0.04587 eV
E C – E F = 0.006648 ln  ----------------------- 2.94
 3.6 ×1015 
1.73
E F – E D = – 0.00087 eV 3.62×1015
1.0
10 16 10 16 15 10×1015
- ≈ ------------- ≈ 3.6 ×10 cm – 3
N D+ = -------------------------- 0 3 5
1 + 2e – 0.130 2.756 N D+ (selected)
Also see the right figure.

6
 1 PHYSICS AND PROPERTIES OF SEMICONDUCTORS—A REVIEW

12. From Fig. 10 in textbook, EA − EV = 0.044 eV.

1021
( E F – E i )/kT NA
n + N A– = n i e + --------------------------------------
( E A – E F )/kT
- 1020 1020
2.66×1019 2.86×1019 cm–3
1 + 4e 1019 1019
( E i – E F )/kT ND 1018
p + N D+ = n i e + --------------------------------------- ≈p
( E F – E D )/kT
1 + 2e 1017 p 1017
Graphic result EF – EV ≈ 0.26 eV, see the right diagram.
1015
3.3×1014
1014
1013

0.044 eV
1010 9.65×109 = ni 9.65×109 cm–3
109 0 0.1 0.2 0.3 EC
EV EF ≈ 0.26 eV

1 1 10 2
13. n no = --- [ N D – N A + ( N D – N A ) 2 + 4n i2 ] = --- [ 2 × 10 10 + ( 2 ×10 ) + 4 ( 9.3 × 10 19 ) ]
2 2
= 2.3885 × 10 10 cm –3
kT N 2.8 × 10 19
∴E C – E F = ------ ln  ------C- = 0.0259 ln --------------------------- = 0.540 eV
q  n 2.39 × 10 10

14. (a) NA > NAu, EF near EV , therefore EA level is neutral and ED level is positive. Therefore the state of charge of gold level
is positive.

(b) No effect.

15. N ∝ exp(–Ed/2kT)
10 15 –ED ED  –ED ED 
- = exp  -----------
--------- - = exp  ---------------
- + ----------- - + ------------------
-
10 14  2kT 1 2kT 2   0.1027 0.00479
2.3
54.8E D = 2.3, E D = ---------- = 0.041 eV . From Fig. 10 in the textbook, we know that the atom is Sb.
54.8

N
16. E C – E F = kT ln  ------C- = 0.0259 ln ( 10 3 ) = 0.1787 eV
 N D
From Fig. 10 in the textbook, E C – E D = 0.045 eV .
E F – E D = 0.045 – 0.1787 eV = – 0.1337 ; thus,
N D0 E F – E D 0.1337 2
------+- = g exp  ------------------
- = 2 exp  – ---------------- = 2 exp ( – 5.16 ) = ------------- = 0.0114 = 1.14% .
ND  kT   0.0259 175.1

7
PHYSICS OF SEMICONDUCTOR DEVICES

n2
17. (a) σ = q ( μ n n + μ p p ) = q μ p  bn + ----i-
n
dσ ni
------ = 0  q μ p b – q μ p n 2i n – 2 = 0 ∴n = -------
dn b
1
-----------------------------------------
bn
q μ p  ------- + bn i
i
ρm  b  b+1
------ = --------------------------------------------- = ------------
ρi 1
------------------------------- 2 b
q μp ni ( b + 1 )
ρm
When b = 3, ------ = 1.15
ρi
1 1
- = 3.59 ×105 Ω-cm
ρ i = ------------------------------- = ------------------------------------------------------------------------------------
q μp ni ( b + 1 ) – 19
1.6 ×10 × 450 × 9.65 ×10 ( 3 + 1 )
9

ρm = 1.15×ρi = 4.12×105 Ω-cm

(b) p po = N A ( Zn ) + N A′ ( C ) – N D ( S )
15 15
= 5 ×10 + 10 17 – 10 17 = 5 ×10 cm – 3
6 2 12
( 2.25 ×10 ) 5 ×10
n po = ----------------------------
15
- = ---------------- = 10 – 3 cm – 3 ≈ 0
15
5 ×10 5 ×10
17
μ p = μ p ( N A + N A′ + N D ) = μ p ( 2.05 ×10 ) = 220 cm 2 /V-s
μn = 4000 cm2/V-s
1 1
ρ = ----------------- = -------------------------------------------------------------
- = 5.68 Ω-cm
q μ p p p0 – 19
1.6 ×10 × 220 × 5 ×10
15

18. Assume ND – NA > ni, the conductivity is given by

σ ≈ qn μ n = q μ n ( N D – N A ) .
We have that
– 19
16 = ( 1.6 ×10 ) μ n ( N D – 10 17 ) .
Since mobility is a function of the ionized impurity concentration, we can use Fig.15 along with trial and error to determine
17
μn and ND. For example, if we choose ND = 2×1017 cm–3, then Nl = N D+ + N A– = 3 ×10 cm –3 , so that μn ≈ 510 cm2/V-s
which gives σ = 8.16 S/cm.
17
Further trial and error yields N D ≈ 3.5 ×10 cm –3 and μn ≈ 400 cm2/V-s which gives σ ≈ 16 S/cm.

19. ND = 1×1014 + 8.5×1012 = 1.085×1014 cm–3

NA = 1.2×1013 cm–3, ND – NA = 9.65×1013 cm–3
9 2
( 9.65 ×10 )
n = 9.65×1013 cm–3 - = 9.65 ×105 cm – 3
p = ----------------------------
13
9.65 ×10
– 19 13
σ = q ( μ n n + μ p p ) = 1.6 ×10 ( 1500 × 9.65 ×10 + 0 ) = 0.0232 S/cm
1
ρ = --- = 43.1 Ω-cm
σ

8
 1 PHYSICS AND PROPERTIES OF SEMICONDUCTORS—A REVIEW

20. τ ∝ E S = –1 S/cm
5 5 35
 τ 2 = a 2 ( kT ) +2 Γ  --- + 1 Γ  --- = ------
2   2 4 /
/
5 2 25
5
 τ 2 = a ( kT ) +1 Γ  --- + 1 Γ  --- = ------
2   2 4
 τ 2 35/4 7
γ = ---------2- = ----------- = --- = 1.4
 τ 25/4 5
–1 1.4
γ - = -----------------------------------------
R H = γ  ------
15
∴ n = --------- = 7 ×10 cm – 3
 qn RH q 1250 × 1.6 ×10
– 19

R 1250
μ H = R H σ = ------H = ------------ = 1250 cm2/V-s
ρ 1

2n i  E t – E i
1 +  --------------------- cosh  --------------- -
 n no + p no  kT  2
21. τr = - = 2 τ ro = ------------------
----------------------------------------------------------------------
v th σ o N t v th σ o N t
9
2 × 9.65 ×10
∴  ------------------------------- cosh x = 1 cosh x ≅ 1
4
∴ --- e x = 5.18 ×10
 10 15  2
x = ln(1.036×105) ≈ 5×2.3 = 11.5
Et – Ei
---------------
- = ± 11.5 Et – Ei = 0.297 eV
kT

σ v th ( 0 – n i2 )N t σ v th n i N t
22. p, n < ni ∴ U = -------------------------------------------- = --------------------
-
0 + 0 + ni ( e + e ) 0 0 2
N 2 - 2
------t- = -------------- = -------------------------------------------------------------
- = 0.103 s
U σ v th n i – 16
2 ×10 × 10 7 × 9.65 ×10
9

– σ v th N t n i
23. U = -------------------------------------
E t – E i
2 cosh  --------------- -
 kT 
Emission time = No. of center/generate rate
E t – E i
2 cosh  ---------------
-
Nt  kT  2×1
∴ τ = ----- = ------------------------------------- ∴ τ = -------------------------------------------------------------
- = 0.103 s
U σ v th n i – 16
2 ×10 × 10 7 × 9.65 ×10
9

σ v th N t n 0 σ v th N t n 0
24. U = --------------------------------------------------------- = ---------------------------------------
n E t – E i n
2 1 + -----i cosh  --------------- 2  1 + -----i cosh 5
n0  kT -  n0 

9
PHYSICS OF SEMICONDUCTOR DEVICES

9
9.65 ×10
2  1 + ---------------------- × 74.2
Nt  10 13 
- = 1.07 ×10–4 = 0.1 ms
τ = no. of center/recombination rate = --------------------------------------- = --------------------------------------------------------
σ v th N t n 0 –
2 ×10 × 10 × 10
16 7 13
---------------------------------------
 ni 
2 1 + ----- cosh 5
 n0 

α 12
25. ν opt = 2 ------f = 2 × 7.63 ×10 Hz
m1
α 12
ν BZ = 2 ------f = 2 × 7.63 ×10 Hz
m1
– 34 12
6.62 ×10 × 2 × 7.63 ×10 J –3
h ν BZ = --------------------------------------------------------------------------
– 19
= 44.6 ×10 eV = 44.6 meV
1.6 ×10 C

–6 –6 –6 –4
26. ( 5.995 ×10 – 4.5 ×10 ) ( 500°C – 27°C ) = ( 1.495 ×10 ) ( 473 ) = 7 ×10 = 0.07%

27. E g = 1.42 + 0.21 + 0.29 = 1.92 eV ΔE C 0.29

---------- = ---------- = 0.15
Eg 1.92

2 2
28. According to infinite potential well, the ground-state energy is E = h /8mL . Therefore, the ground-state energies of elec-
2 2 2 2
tron and hole are h /8m e L and h /8m h L , respectively. The bandgap of the quantum well is
2 2
h h
E g + --------------2- + ---------------2-
8m e L 8m h L
As the result, the bandgap of the quantum well can be tuned by the size of quantum well L, where the bandgap increases as
the decreasing L.

29. The Poisson equation is given by

2
d ψ q ( n – p + NA – ND )
---------2 = ---------------------------------------------
-. (18)
dx εs
By considering Eqs. 27a, 27b in the textbook, and E F – E i = q ψ , we have the formula of carrier concentrations

E F – E i ψ /V th
n = n i exp  ----------------
- = ni e (19)
 kT 
and
E i – E F – ψ /V th
p = n i exp  ----------------
- = ni e . (20)
 kT 
Substituting Eq. (1.26) and (1.27) into Eq. (1.25),
ψ /V th – ψ /V th
d ψ
2 q ( ni e – ni e + NA – ND ) qn ψ /V – ψ /V th NA – ND
---------2 = ------------------------------------------------------------------------------- = -------i  e th – e + -------------------- . (21)
dx ε s ε s
 ni 

10
 1 PHYSICS AND PROPERTIES OF SEMICONDUCTORS—A REVIEW

30. 2D:
2 2
d ψ d ψ q ( n – p + NA – ND )
Poisson equation: --------2- + ---------2 = ----------------------------------------------
dx dy εs
The electron current-continuity equation:
2 2 2 2
– μ n ∂n ∂ψ – μ n n ∂ ψ + D n ∂ n – μ n ∂n ∂ψ – μ n n ∂ ψ + D n ∂ n = R ( n, p )
∂x∂x ∂x
2
∂x
2 ∂y∂y ∂y
2
∂y
2

The hole current-continuity equation:

2 2 2 2
μ p ∂p ∂ψ + μ p p ∂ ψ2 + D p ∂ p2 + μ p ∂p ∂ψ + μ p p ∂ ψ2 + D p ∂ p2 = R ( n, p )
∂x∂x ∂x ∂x ∂y∂y ∂y ∂y
3D:
2 2 2
d ψ d ψ d ψ q ( n – p + NA – ND )
Poisson equation: --------2- + ---------2 + --------- = ---------------------------------------------
-
dx dy dz
2 εs
The electron current-continuity equation:
2 2 2 2 2 2
∂n ∂ψ ∂ψ ∂n ∂n ∂ψ ∂ψ ∂n ∂n ∂ψ ∂ψ ∂n
– μn – μn n 2 + Dn 2 – μn – μn n 2 + Dn 2 – μn – μ n n 2 + D n 2 = R ( n, p )
∂x∂x ∂x ∂x ∂ y ∂ y ∂y ∂y ∂ z ∂ z ∂z ∂z
The hole current-continuity equation:
2 2 2 2 2 2
μ p ∂p ∂ψ + μ p p ∂ ψ2 + D p ∂ p2 + μ p ∂p ∂ψ + μ p p ∂ ψ2 + D p ∂ p2 + μ p ∂p ∂ψ + μ p p ∂ ψ + Dp
∂p
= R ( n, p )
∂x∂x ∂x ∂x ∂y∂y ∂y ∂y ∂z ∂z ∂z
2
∂z
2

31. From Eq. 155 in the textbook, we have

1 1
Q = --- J n ⋅ ∇E C + --- J p ⋅ ∇E V + E g ( U – G ) .
q q
For a device with uniform bandgap, Eg is a constant. The electric field can be expressed as
1 1
E = – ∇φ = --- ∇E C = --- ∇E V .
q q
Thus,
Q = Jn ⋅ E + Jp ⋅ E + Eg ( U – G ) .

N ( x – μ p Et ) 2 t
32. Δp = p n – p no = ------------------- - – ----
exp – ---------------------------
4πD p t 4D p t τp
N t
At max, Δp = ------------------- exp – ----
4πD p t τ p

Δp ( t 1 ) t t t 100 100 – 25- = 10

---------------- = -------2- exp  – ----1 + ----2  = --------- exp  --------------------
Δp ( t 2 ) t1  τ p τ p 25  τp 

100 – 25 75 75
τ p = --------------------- = -------- = ------------- = 46.5 μs
ln ( 10/2 ) ln 5 1.607

N ( x – μ p Et ) 2 t
33. p – p n = ------------------- exp – ---------------------------- – ----
4 π Dp t 4D p t τp
( x – μ p Et ) 2 1
At half max exp – ---------------------------- = --- ∴ ( x – μ p Et ) 2 = 4D p t ln 2
4D p t 2

11
PHYSICS OF SEMICONDUCTOR DEVICES

Half width = 2 D p t ln 2 = 2 10 × 1 × ln 2 = 5.26 cm

p n – p no ∂2 pn
34. – ------------------- + D p ----------
- = 0
τp ∂x 2
p J (W) 1
α 0 = --------------
- = -----------------------
Jp ( 0 ) W
cosh  ------
 L P

–6 –2
L = DP τP = 5.18 × 50 ×10 = 1.6 ×10 cm
1 1
∴ α 0 = --------------------------------------- = --------------------------- = 0.954 = 95.4%
 5 ×10  – 3 cosh ( 0.31 )
cosh  -------------------- - 
 1.6 ×10–2

6 2
( 2.25 ×10 )
35. p no = ----------------------------
15
- = 10 – 3 cm –3
5 ×10
No. of electron-hole pairs τ p G = 10 –7 × 10 17 = 10 10 cm –3
–3
F = S p [ p n ( 0 ) – p no ] , L p = 1.93 ×10 cm
τp Sp e 0 10 – 7 × 10 5
p n ( 0 ) = p no + τ p G 1 – --------------------- - = 10 10 × 0.165 = 1.65 ×109 cm – 3
- = 0 + 10 10 1 – -------------------------------------------------------
Lp + τp Sp 1.93 ×10 + 10 × 10
–3 – 7 5

9 14
F = 10 5 ( 1.65 ×10 – 0 ) = 1.65 ×10 cm –2 s –1

36. Under the steady-state condition, the recombination rate at the surface and in the bulk is equal, that is
Δp n ,bulk Δp n ,surface
------------------- = ----------------------- .
τ p, bulk τ p, surface
The excess minority carrier concentration at the surface is given by
10 –7
Δp n ,surface = 10 14 × ---------
- = 10 13 cm – 3 .
10 –6
The generation rate can be determined from the steady-state conditions in the bulk
10 14
G = ---------
- = 10 20 cm – 3 s – 1 .
10 –6
The boundary conditions are:
Δp(x = ∞) = 1014 cm–3
and Δp(x = 0) = 1013 cm–3
– x/L P
Hence Δp ( x ) = 10 14 ( 1 – 0.9e ) cm–3, where L P = 10 × 10 –6 = 31.6 μm .

12