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EE3020 Design Laboratory 4 – Common-Source

Amplifier
Dayne, Bauer

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Abstract—This document covers the design, testing, and 𝜔𝐶𝐶1 = 𝑅 𝑅 (5)
analysis of a common-source amplifier circuit with the goal of 𝐶𝐶1 (𝑅𝑆𝑖𝑔 + 𝐺1 𝐺2 )
𝑅𝐺1 +𝑅𝐺2
determining gain when a small-signal voltage is input into the 1
circuit. The results garnered from testing were relatively close to 𝜔𝐶𝐶2 = 𝑅 𝑟 (6)
𝐶𝐶2 (𝑅𝐿 + 𝐷 𝑜 )
𝑅𝐷 +𝑟𝑜
the anticipated outcomes with the only issue being that the gain
was slightly deviated from specifications however this was rectified
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and the gain now operates within specifications. The design for the 𝜔𝐶𝑠 = 1 (7)
𝐶𝑠 ( )
common-source amplifier followed specifications based on the 𝑔𝑚
limitations in gain and maximum current draw from VDD. The cost
of the project amounted to $2.52, and it took 7 hours to complete 𝜔 = 2𝜋 ∗ 1250 (4)
when accounting for time designing, constructing, testing, and
documenting.

Index Terms—MOSFET, gain, small-signal, source current,

drain current, common-source amplifier. It was ultimately determined that the circuit had a gain of 12.5
V/V and would need the following resistors 1.8 kΩ, 2 kΩ, 2 kΩ,
I. INTRODUCTION 68 kΩ, 100 kΩ as well as two 150 nF capacitors and one 10 µF
capacitor to meet specifications.

T HIS project consists of the construction and testing for

a common-source amplifier, it began with calculating
the component values required to achieve the desired
gain for the circuit while maintaining design parameters. To
II. PROCEDURE
The design for the circuit created during this project was
done by hand calculation using predictive math solutions as a
accomplish this the dc case was to be observed first where the
resistor component values and drain current were all calculated starting point. The following circuit was then constructed.
simultaneously using (1) and (2).

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𝐼𝐷 = 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑡𝑛 )2 (1)
2
𝑅𝐺2
∗ 𝑉𝑆𝑜𝑢𝑟𝑐𝑒 = 𝑉𝐺 (2)
𝑅𝐺1 +𝑅𝐺2

The resistor values and drain current were then used to

determine the transconductance (gm) using (3).

𝑔𝑚 = √2𝑘𝑛 − 𝐼𝐷 (3)

The gain was then determined using all the previously

calculated values and (4).
Fig. 1. displays a common-source amplifier circuit with a gain
𝑅𝐷 𝑅𝐿
𝐴𝑉 = 𝑔𝑚 (4) of 12.5 V/V.
𝑅𝐷 +𝑅𝐿

To check that the circuit would meet specifications however,

the small-signal model was used to assess if the values would
still work under small-signal conditions. This required
calculating the three capacitors present in the circuit this was
done using (5) - (8).

Paper was submitted to canvas April 24th ,2023. University of Wisconsin Platteville student. Current email is
[email protected]
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III. EQUIPMENT/PARTS LIST

TABLE I
COST SUMMARY

Unit Description Quantity Unit Price Unit Total Part Number

($) [1][2] ($)
BS170 MOSFET 1 0.43 0.43 BS170
10 µF Capacitor 1 0.71 0.71 450BXC10M
EFC10X20
68 kΩ Resistor 1 0.10 0.10 603-CFR-
25JR-52-68K
1.8 kΩ Resistor 1 0.10 0.10 603-CFR- Fig. 5. Displays the drain current of the common-source
25JT-52-1K8 amplifier.
100 kΩ Resistor 1 0.10 0.10 603-CFR-
25JB-52-
100K
0.15 µF Capacitor 2 0.44 0.88 UKL2AR15 V. DISCUSSION
MDD1TD
2 kΩ Resistor 2 0.10 0.10 603-CFR-
The laboratory results for the circuit were slightly off from
25JB-52-2K predicted values with a gain of roughly 11 V/V however the
Total 9 - 2.52 source current was 2 mA to fix this issue the 1.2 k Ω resistor
was swapped out for a 2 k Ω resistor and then the gain was
matched the previous predicted value with a gain of 12.5 V/V
IV. RESULTS and all other specifications being met. The only issue present
after swapping the resistor was the large amount of noise. This
could be mitigated with a voltage divider at the gate. However,
due to limitations on time this option was not explored.

VI. TIME ALLOCATION

Task Time Taken (Hours)
Design/Calculations 2
Construction 0.5
Testing 2
Report 2.5
Total 7

VII. CONCLUSION
This project had the purpose of familiarizing students with
the design and use of a MOSFET amplifier circuit. The
knowledge gained will assist students in further use with
Fig. 3. Displays the gain of the common-source amplifier biasing MOSFETs and controlling their gain.
circuit at 12.5 V/V.

VIII. REFERENCES
[1] Mouser (2023). Mouser Electronics, Available:
Electronic Components Distributor - Mouser Electronics
[2] DigiKey (2023). DigiKey Electronics, Available:
DigiKey Electronics - Electronic Components Distributor

[3] Onsemi (2022, April). Field Effect Transistor, N-

Channel, Enhancement Mode, Available: MMBF170 - Field
Effect Transistor - N-Channel, Enhancement Mode
(onsemi.com)
Fig. 4. Displays the drain-to-source voltage of the common-
source amplifier.