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Toshiba FAB Automotive MOSFETs 202001

Toshiba_FAB_Automotive_MOSFETs

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0% found this document useful (0 votes)
16 views4 pages

Toshiba FAB Automotive MOSFETs 202001

Toshiba_FAB_Automotive_MOSFETs

Uploaded by

Alexandr Syrov
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOSFET

Power
MOSFET

For Automotive
Toshiba offers an extensive lineup of power MOSFETs for various automotive applications including 48V battery
systems. The combination of low ON-resistance and advanced package technology makes Toshiba's power
MOSFETs an ideal solution for reducing system losses, thereby contributing to energy-saving in automotive
applications. All MOSFETs on this leaflet are qualified to AEC-Q101 or are under AEC-Q101 qualification.

Reduced RONA due to the small-geometry trench process

Copper (Cu) connector bonding Cu connector Chip


Copper(Cu) connectors are used instead of conventional (Gate)
Aluminium wire bonding in all the MOSFETs mentioned in Cu
connector
this flyer. Copper connectors contribute to the reduction
(Source)
of the package resistance and inductance.

RDS(ON) max (mΩ)


VDSS ID(DC) PD Qg typ AEC-
Package Polarity Process Part no. VGS=10V VGS=6V
(V) (A) (W) (nC) Q101
(-10V Pch) (-6V Pch)
TO-220SM(W) Package (10mm x 13mm)
UMOS10 100 (XK1R9F10QB) (1.92) (3.31) (160) (375) (184) *
TKR74F04PB 0.74 0.98 250 375 227 ✓
UMOS9 40
TK1R4F04PB 1.35 1.90 160 205 103 ✓
Nch
40 TK200F04N1L 0.9 1.37 200 375 214 ✓
UMOS8 TK60F10N1L 6.11 9.25 60 205 60 ✓
100
TK160F10N1L 2.4 3.9 160 375 122 ✓
TJ200F04M3L 1.8 2.6 -200 375 460 ✓
-40
TJ100F04M3L 3.6 5.4 -100 250 250 ✓
Pch UMOS6
TJ150F06M3L 5.6 6.1 -150 300 420 ✓
-60
TJ100F06M3L 7.1 10.7 -100 250 250 ✓
RDS(ON) max (mΩ)
VDSS ID(DC) PD Qg typ AEC-
Package Polarity Process Part no. VGS=10V VGS=4.5V/6V
(V) (A) (W) (nC) Q101
(-10V Pch) (-4.5V/-6V Pch)

D2PAK+ Package (10mm x 15mm)


UMOS9 40 TK1R5R04PB 1.50 2.05@6V 160 205 103 ✓
Nch
UMOS8 100 TK60R10N1L 6.31 9.55@6V 60 205 60 ✓

DPAK+ Package (6.5mm x 9.5mm)


UMOS9 40 TK1R4S04PB 1.35 1.90@6V 120 180 103 ✓

TK100S04N1L 2.3 [email protected] 100 157 76 ✓

40 TK65S04N1L 4.3 [email protected] 65 107 39 ✓

TK15S04N1L 17.8 [email protected] 15 46 10 ✓

TK90S06N1L 3.3 [email protected] 90 157 81 ✓

60 TK40S06N1L 10.5 [email protected] 40 88 26 ✓

Nch TK25S06N1L 18.5 [email protected] 25 57 15 ✓


UMOS8
TK60S10N1L 6.11 9.25@6V 60 180 60 ✓

TK55S10N1 6.5 - 55 157 49 ✓

TK33S10N1Z 9.7 - 33 125 28 ✓


100
TK33S10N1L 9.7 [email protected] 33 125 33 ✓

TK11S10N1L 28 [email protected] 11 65 15 ✓

TK7S10N1Z 48 - 7 50 7.1 ✓

TJ90S04M3L 4.3 [email protected] -90 180 172 ✓

TJ80S04M3L 5.2 7.9@-6V -80 100 158 ✓

TJ60S04M3L 6.3 9.4@-6V -60 90 125 ✓


-40
TJ40S04M3L 9.1 13@-6V -40 68 83 ✓

TJ20S04M3L 22.2 32@-6V -20 41 37 ✓

Pch UMOS6 TJ10S04M3L 44 62@-6V -10 27 19 ✓

TJ60S06M3L 11.2 14.5@-6V -60 100 156 ✓

TJ50S06M3L 13.8 17.4@-6V -50 90 124 ✓

-60 TJ30S06M3L 21.8 28@-6V -30 68 80 ✓

TJ15S06M3L 50 63@-6V -15 41 36 ✓

TJ8S06M3L 104 130@-6V -8 27 19 ✓

* Under development

toshiba.semicon-storage.com
RDS(ON) max (mΩ)
VDSS ID(DC) PD Qg typ AEC-
Package Polarity Process Part no. VGS=10V VGS=6V
(V) (A) (W) (nC) Q101
(-10V Pch) (-4.5V Pch)

DSOP Advance (WF)L package (5mm x 6mm)

UMOS9 40 TPWR7904PB 0.79 1.3 150 170 85 ✓


zz Nch
UMOS8 100 (XPW4R10ANB) (4.1) (6.2) (70) (170) (75) *

DSOP Advance (WF)M package (5mm x 6mm)

UMOS9 40 TPW1R104PB 1.14 1.96 120 132 55 ✓


zz Nch
UMOS8 100 (XPW6R30ANB) (6.3) (9.5) (45) (132) (52) *

SOP Advantage (WF) package (5mm x 6mm)


TPHR7904PB 0.79 1.3 150 170 85 ✓
40
UMOS9
TPH1R104PB 1.14 1.96 120 132 55 ✓
Nch
(XPH4R10ANB) (4.1) (6.2) (70) (170) (75) *
UMOS8 100
(XPH6R30ANB) (6.3) (9.5) (45) (132) (52) *

XPH3R114MC 3.1 4.7 -100 170 230 ✓


Pch UMOS6 -40
XHP4R714MC 4.7 6.9 -60 132 160 ✓

TSON Advance (WF) package (3.3mm x 3.6mm)


(XPN3R804NC) (3.8) ([email protected]) (40) (100) (35) *
40
(XPN7R104NC) (7.1) ([email protected]) (20) (65) (21) *
Nch UMOS8
(XPN6R706NC) (6.7) ([email protected]) (40) (100) (35) *
zz 60
(XPN12006NC) (12.0) ([email protected]) (20) (65) (23) *
* Under development
XPN9R614MC 9.6 [email protected] -40 100 64 ✓
Pch UMOS6 -40
(XPN19014MC) (18.7) ([email protected]) (-20) (65) (46) *
* Under development

Double-sided cooling Double-sided cooling

The DSOP advance(WF) double-sided cooling packages 5.0mm


fit the same footprint as the SOP advance(WF). Due to
the greatly reduced thermal resistance, the maximum
load can be increased considerably. Alternatively the
MOSFET temperature can be reduced to increase long
term reliability. 6.0mm
toshiba.semicon-storage.com
Power MOSFET package lineup

D2PAK+ TO-220SM(W) DPAK+

D2PAK foot print compatible

Unit : Unit : Unit :


mm mm mm
DSOP Advance(WF) L DSOP Advance(WF) M SOP Advance(WF)
with wettable flanks with wettable flanks with wettable flanks

Unit : Unit : Unit :


mm mm mm
TSON Advance(WF)
with wettable flanks

Tentative package drawing

Unit :
mm

© 2020 Toshiba Electronic Devices & Storage Corporation 201912


Product specifications are all subject to change without notice. Product design specifications and colours toshiba.semicon-storage.com
are subject to change without notice and may vary from those shown. Errors and omissions excepted.

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