Semiconductors
Presented by:
Dr. Haitham Omran
Electronics Department
Email: [email protected]
هــ1446
Winter 2024
Carrier Transport in Semiconductors
Mobility
= 𝑣𝑑𝑒 = 𝑢𝑒 𝐸𝑥 𝑣𝑑ℎ = 𝑢ℎ 𝐸𝑥
𝑒𝜏𝑐
𝑢𝑒 = ∗
𝑚𝑒
Mean Free time: 𝜏
• Mean Free time between collisions 𝜏
• Determined by various scattering mechanisms
• Lattice Scattering
• Impurity Scattering
Lattice scattering results from thermal vibrations of the lattice atoms at any temperature
above absolute zero
mobility due to lattice scattering μL will decrease in proportion to T-3/2.
Impurity scattering results when a charge carrier travels past an ionized dopant impurity
(donor or acceptor). The charge carrier path will be deflected because of Coulomb force
interaction
mobility due to lattice scattering μI will increase in proportion to T3/2
Mean Free time: 𝜏
1
• The number of collisions taking place in a unit time, , is the sum of the numbers of collisions due to
𝜏𝑐
the various scattering mechanisms
=
Mobility
At certain Temp.
Carrier Transport Mechanisms:
Drift current
Diffusion current
Generation and recombination
Continuity equation
Drift Current
Bottom of the conduction band EC
corresponds to the potential energy of
an electron
𝐸𝑐 𝑎𝑛𝑑 𝐸𝑖 𝑎𝑟𝑒 𝑝𝑎𝑟𝑎𝑙𝑙𝑒𝑙
The force is equal to the negative gradient of potential energy:
−
Ei: Intrinsic energy level
= =
We will define electrostatic potential:
Drift Current
Drift current density J:
𝐽 = 𝑒𝑛𝑣𝑑𝑒 + 𝑒𝑝𝑣𝑑ℎ
= 𝑒𝑛𝑢𝑒 𝐸𝑥 + 𝑒𝑝𝑢ℎ𝐸𝑥
𝐽 = σ𝐸𝑥 where σ = 𝑒𝑛𝑢𝑒+ 𝑒𝑝𝑢ℎ
n: electron concentration in conduction band
P: hole concentration in valence band
σ: conductivity of semiconductor
Resistivity
For n-type semiconductor
=
Diffusion Current
The carriers tend to move from a region of high concentration to a region of low
concentration. This current component is called the diffusion current.
The average rate of electron flow per unit area F1
of electrons crossing plane x = 0 from the left is
-
= = -
The average rate of electron flow per unit area F1
of electrons crossing plane x = 0 from the right is
ℓ: mean free path
= -- =
= - --
= - -
=- -
==- =
Current Density Equations
Einstein Relations:
Regeneration and Combination
Regeneration and Combination
• At thermal equilibrium: = =
• If excess carriers are introduced to a semiconductor so that pn≠ ni2, we have a
nonequilibrium situation
• The mechanism that restores equilibrium is recombination of the injected
minority carriers with the majority carriers
Direct Recombination
Sze 2nd edition
Regeneration and Combination
• If excess carriers are introduced to a semiconductor so that
pn≠ ni2, we have a nonequilibrium situation
Regeneration and Combination
Low level injection in an n-type semiconductor does not affect
nn but drastically affects the minority carrier concentration pn.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Regeneration and Combination
1
In direct gap semiconductors: 𝜏ℎ𝛼
𝑛𝑛𝑜
Regeneration and Combination
≈
Regeneration and Combination
See solution in Kasap
Direct Recombination
• When excess carriers are introduced to a direct-bandgap semiconductor, the probability is high that
electrons and holes will recombine directly.
• The rate of the direct recombination R is proportional to the number of electrons available in the
conduction band and the number of holes available in the valence band
At Thermal Equilibrium: = =
The net rate of change of hole concentration is given by:
Indirect Recombination
• The dominant recombination process in such semiconductors is indirect
transition via localized energy states in the forbidden energy gap.
• These states act as stepping stones between the conduction band and the
valence band.
Indirect generation-recombination processes of (a)
electron capture, (b) electron emission, (c) hole
capture, and (d) hole emission at thermal equilibrium
Surface Recombination
Auger Recombination
Ocurres by the transfer of energy and momentum released by the
recombination of an electron hole pair to a third particle (hole or
electron)
𝑅𝐴𝑢𝑔 = 𝐵𝑛2 𝑝 = 𝐵𝑛𝑝2
Continuity Equation
The overall rate of electron increase is the algebraic sum of four components: the number of electrons flowing
into the slice at x, minus the number of electrons flowing out at x + dx, plus the rate at which electrons are
generated, minus the rate at which they are recombined with holes in the slice.
Expanding current density using tailor series
Basic continuity equation for electrons:
Basic continuity equation for holes:
Substitute the current, the recombination and generation expressions:
One dimensional continuity equation under low injection conditions
= -
= + -
=
Also, Poisson’s equation must be satisfied
=
Steady-State Injection from One Side
It is assumed that light penetration is negligibly small (i.e., the assumptions of zero field and
zero generation for x > 0).
At steady state there is a concentration gradient near the surface.
Differential equation for the minority carriers inside the semiconductor is:
If we change the second boundary condition, pn(W) = pno
= -
The current density at x = W is given by the diffusion current expression, with E = 0:
Examples
Examples
Examples
Examples
