DCM™1000X – Automotive Power Module

Technology Platform Optimized for SiC Traction

Inverters
2021 IEEE Applied Power Electronics Conference and Exposition (APEC) | 978-1-7281-8949-9/21/$31.00 ©2021 IEEE | DOI: 10.1109/APEC42165.2021.9487446

Fabio Carastro Zheng Chen Alexander Streibel Ole Muehlfeld

Danfoss Silicon Power Danfoss Silicon Power Danfoss Silicon Power Danfoss Silicon Power
Munich, Germany Boston, USA Flensburg, Germany Flensburg, Germany
[email protected] [email protected] [email protected] [email protected]

Abstract—This paper introduces the Danfoss DCM1000X

power module technology platform, which is developed to meet the
harshest requirements of automotive traction inverters, and
optimized to fully unleash the capabilities of latest silicon carbide
(SiC) power switches. Advanced packaging technologies unique to
Danfoss, such as Danfoss Bond Buffer® (DBB®) and
ShowerPower® 3D (SP3D®), have been implemented to embrace
the cooling and thermo-mechanical challenges in electric vehicle
drivetrains. The three-DC-terminal design, and the symmetrical
and optimized internal layout, minimize the power loop
inductance, and ensure balanced current distribution within the
module. As a platform, the DCM1000X offers many customizable DCM1000X half-bridge power module. (Left) Front showing mold
features and provides scalable power solutions from 750 V to 1200 housing and terminals, (right) back showing SP3D baseplate
V, although this paper will focus on the performances of a 1200 V,
660 A SiC half-bridge module, a leading variant within the family. The philosophy behind the platform concept is inverter
modularity by giving Tier 1s and OEMs great flexibility in
Keywords—Electric vehicle, traction inverter, power module, customizing the module performance with the most suitable
SiC packaging materials (e.g. semiconductor devices, substrate
thicknesses and insulating ceramic, solder or press-fit pins,
I. INTRODUCTION leadframe plating, and baseplate material, etc.), while still
The accelerating global warming and pollution, as well as offering a common backbone package that can operate under
international carbon emission targets, have greatly driven the harshest conditions. One further key differentiator of the DCM
electrifications of transportation applications, among which the platform is its semiconductor chip independency, which allows
development of battery electrical vehicles (BEVs) has become customers to select from a wide range of suppliers, and enables
the center stage of the automobile industry nowadays. a flexible and optimized module design that meets both cost and
supply security targets.
Danfoss Silicon Power actively supports this mega-trend in
the automotive industry with the development of the Direct II. ADVANCED PACKAGING TECHNOLOGIES
Cooled Molded (DCM) half-bridge module platform for traction
inverter applications [1]. The DCM1000 platform is designed to Efficient use of the semiconductors within the module is key
accommodate up to 1000 mm2 of semiconductor area, while to achieving cost competitiveness for traction inverter
being scalable in voltage class until now up to 900 V. With the applications. Getting the most out of the semiconductors
DCM1000X family, as shown in Fig. 1, the DCM platform has requires a multidisciplinary approach addressing material
been extended up to 1200 V, in order to utilize the latest science, new bonding and joining technologies, and innovative
generation of 1200 V SiC MOSFETs as well as 1200 V Si thermal management.
IGBTs. The extension of the DCM platform is designed to A. Transfer Molding
satisfy the commonly applied insulation coordination, such as The DCM1000X utilizes a specific transfer mold package
IEC 60664-1, to allow DC-link voltage up to 1000 V. The material that exhibits superior mechanical robustness and high-
module’s current capability, on the other hand, can be scaled up temperature stability. With the transfer molded housing design,
to 800 A through the amount of semiconductor area used, as well as seen in Fig. 1, the module is sealed and protected from
as material selection and process optimization. humidity and vibrations, thus providing stable and reliable
inverter performance even when subject to mechanical shocks
and damp environments.

978-1-7281-8949-9/21/$31.00 ©2021 IEEE 2364

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B. Danfoss Bond Buffer (DBB) test module with Al wire-bonding and either soldered or sintered
The patented DBB technology is implemented in all DCM die attach, while each orange dot represents a DBB test module.
modules to reach a superior power cycling (PC) lifetime while Note that Si devices are used for both grey and orange dots.
minimizing the required semiconductor content. DBB is According to AQG-324 guideline [3], failure criteria of the PCsec
compatible with any Si or SiC devices commonly used in test are either 5% increase in device forward voltage drop, or
automotive traction applications. 20% increase in Rth, which represents bond wire lift-off and/or
solder layer crack as the typical failure mechanisms. Comparing
The concept of DBB is based on an innovative combination the PC cycle numbers at ΔT = 100 K, roughly 15 times of longer
of Cu wire-bonding and sintered die attach, which replaces lifetime can be observed for the DBB modules, which is ideal
conventional Al wires and solder joints [2]. As illustrated in Fig. for use in automotive environments. The tests of DBB modules
2, a thin layer of Cu foil – the Bond Buffer, is sintered on the with SiC chips are still ongoing at the time of this paper, but
semiconductor’s top-side metallization, upon which Cu wire, or early results, as indicated by the diamond dots in Fig. 3, are in
even Cu ribbon, can be attached. The Cu interconnection line with the trend seen in DBB tests on Si, with the first failure
exhibits significantly higher robustness than the Al occurring at 380k cycles and ΔT = 130 K [4].
interconnection, but also requires a much higher bonding force.
The Cu Bond Buffer therefore absorbs the bonding energy and
protects the die from damage. Beneath the Bond Buffer, the
semiconductor chip itself is also sintered onto the Cu surface of
the insulating substrate, forming the die attach. Sintering of both
the Bond Buffer and the chip are completed in a single process
step.
The DBB provides both electrical and thermal benefits to the
semiconductor chips. The Cu wires exhibit lower ohmic loss
than Al. The Cu foil, thanks to its large area, increases the
vertical current flow into the chip, and provides more uniform
current density distribution within the chip. On the other hand,
transient thermal impedance Zth of the die can be reduced due to
the additional heat capacity from the Cu foil and wires, while the
static thermal resistance Rth remains unaffected, since the Bond
Buffer is not in the main thermal path [2].

Comparison of power cycling results between conventional bonding

and joining technologies and DBB

C. ShowerPower and SP3D

The patented ShowerPower was originally designed for the
direct liquid cooling of flat-baseplate power modules [5].
ShowerPower coolers have been widely used on standard
modules, like P3 and EconoPlus modules, in industrial and
(a) renewable applications for more than 10 years, without failures
due to cooling, coolant leakage, or clogging.
The SP3D is the latest evolution of this proven technology
for the DCM automotive modules. As seen in Fig. 1 (right),
multiple meandering channels are directly integrated with the
baseplate. These channels force the coolant flow to change
directions repeatedly, as Fig. 4 illustrates, when it travels from
one end of the module to the other. As the coolant flow makes
U-turns, it also rotates around its direction of movement, a
(b) phenomenon commonly seen in turning rivers. Thanks to this
swirl effect, cold coolant is constantly brought into contact with
DBB structure. (a) Top view, (b) cross-secional view the baseplate surface, effectively reducing the thermal
resistance. For the 660 A module discussed in this paper, a
Thanks to Cu wire-bonding and sintered die attach, the DBB junction-to-fluid thermal resistance RthJ-F as low as 0.074 K/W
can achieve much longer power cycling lifetime for the module has been achieved, assuming 65 °C coolant at 3.33 l/min flow
than any other conventional bonding and joining technologies. rate per module.
Fig. 3 summarizes and compares the end-of-life number of
cycles from PCsec tests (i.e. with ton < 5 s), between conventional
modules and modules with DBB, under different junction
temperature swings ΔT. Each grey dot in the figure represents a

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 Power
loops

Fluid simulation showing the coolant velocity as it travels through the

meandering channel

Besides superior cooling performance, the SP3D also

enables parallel cooling within the module, as well as among
three modules sitting side-by-side in an inverter setup, as shown
in Fig. 5. The parallel cooling principle minimizes the
temperature gradients between the modules, which are usually
associated with series cooling such as pin-fin coolers. Moreover,
the channel walls of SP3D also bring a considerably extra Power terminal and signal pin allocations for the DCM1000X module
amount of mechanical stiffness to the module compared to the
pin fins, allowing for high pressure pulses in the cooling system. 100VGS
VDS
ID
Voltage (V) / Current (A)

Parallel cooling of an inverter with three modules. Phase B illustrates

the coolant flow within meadering channels. Number of channels in the
baseplate is customizable. 5 channels are used in the DCM1000X module
discussed in this paper Time (μs)

III. ELECTRICAL PERFORMANCE OF THE 1200 V, 660 A MODULE (a)

The 1200 V, 660 A variant of the DCM1000X family 100VGS

accommodates a total of sixteen SiC MOSFET dies (eight dies VDS
per switch) with no additional SiC Schottky diodes. Fig. 6
ID
Voltage (V) / Current (A)

provides a drawing for the module’s power terminal and signal

pin allocations. On the top side of the module, there are three
DC terminals, and on the bottom side, the AC terminal as well
as all signal pins, including gate driving and temperature sensing
pins, can be found. As indicated by the red curves in the figure,
the three-DC-terminal design splits the power commutation loop
into two symmetrical parts, thus reducing the effective loop
inductance by two. This, together with the optimized internal
layout design, achieves a module stray inductance as low as 6.5
nH.
The minimized power loop inductance is critical to push
faster switching of SiC MOSFETs, and at the same time achieve Time (μs)
clean switching waveforms. Fig. 7 shows the module’s typical
switching waveforms from the double-pulse test, at 825 V, 900 (b)
A, and room temperature. The gate driving voltage is +15/-4 V, Switching waveforms of the module under inductive load, at 825 V,
and gate resistances are optimized to minimize switching losses 900 A, and 25 °C. (a) Turn-on, (b) turn-off

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within the chip SOA (Safe Operating Area). Thanks to the low- 180
inductance package design, only minor ringing can be observed 170
from the figure. 160
150
Using the MOSFET I-V curves, measured switching 140
energies, and simulated thermal resistances, the module’s

TVJ in °C
130
current capability under inverter operations can be calculated 120
based on the method described in [6]. To get more accurate 110
results, the temperature dependencies of device characteristics, 100
90
as well as cross-coupling thermal resistances between high- and
80
low-side switches, are all considered in the calculations. 70
Assuming the conditions listed in TABLE I. , one can calculate 60
the MOSFET average virtual junction temperature TVJ (i.e. 100 200 300 400 500 600 700 800
average junction temperature of a switch function without Output current in ARMS
considering temperature ripples) as a function of inverter output
current, at fsw = 10 kHz, as shown in Fig. 8. The interception of Calculated MOSFET average TVJ vs. inverter output current at 10 kHz
the curve at 700 ARMS shows TVJ to stay below the SiC based on conditions in TABLE I.
MOSFET’s TJ,max of 175 °C, which is taken as the typical current
capability of the module. 800

TABLE I. INVERTER OPERATING CONDITIONS ASSUMED FOR MODULE 750

CURRENT CAPABILITY CALCULATIONS

Output current in ARMS

700
Parameters Value 650
708 A
DC bus voltage VDC 800 V 600
Power factor 1
616 A
550
Modulation method SPWM 500 542 A
Average TVJ = 175 °C
Modulation index m 1 450
Switching frequency fsw 10 kHz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Switching frequency in kHz
Coolant temperature 65 °C
Calculated module’s current capability vs. switching frequency based
Coolant flow rate (per module) 3.33 l/min on conditions in TABLE I.

liquid cooling. All necessary functions, e.g. gate driving,

Repeating the calculations under different switching sensing, and protection, are included for the kit to run either
frequencies will lead to Fig. 9 – inverter maximum output double-pulse tests or continuous inverter tests.
current as a function of switching frequency. At 10 kHz and 708
ARMS, the device is conduction loss dominant, with a switching The DC-link capacitor is a second-generation, low-inductive
loss / total loss ratio of roughly 30%. Thanks to the low design to the one originally reported in [7]. The capacitor keeps
switching loss of SiC MOSFETs, the inverter output current its symmetrical design at module’s terminals, ensuring superior
derates moderately as fsw increases. 616 ARMS can be achieved at current sharing during fast switching transients and steady-state
20 kHz, with switching and conduction losses almost break even operations. Meanwhile, the total external stray inductance,
at 50/50 ratio. At even 30 kHz, 542 ARMS output can still be including the capacitor connections and the DC busbar structure,
achieved, with switching loss reaching roughly 60% of the total has been reduced further to 2.8 nH, leading to an overall power
loss. loop inductance as low as 9.3 nH, together with the module.
It is important to note that neither calculations in Fig. 8 nor TABLE II. summarizes the mechanical and electrical
Fig. 9 takes TVJ ripple and safety margins (in RDS(on), Eon, and Eoff, specifications of the application kit.
etc.) into considerations. Therefore, the calculated current
The continuous three-phase inverter tests have been
capabilities are “typical” values and need to be derated properly
performed on special open-frame, non-molded DCM1000X
based on actual inverter designs.
modules with black thermographic insulating paint on top of the
IV. DCM1000X APPLICATION KIT AND INVERTER TEST dies, so that the chip temperatures can be monitored with a
thermal camera. Tests at 10 kHz switching frequency are done
A three-phase application kit has been developed around the with operating conditions listed in TABLE III. Inverter output
DCM1000X modules to demonstrate its performance under power Pout is increased step by step, and maximum chip
inverter operations. Fig. 10 shows the application kit for temperature TJX is recorded at each Pout, as illustrated in Fig. 11.
DCM1000, but the DCM1000X kit has a very similar design. Note that TJX here represents the hottest die temperature of all
Besides power modules, the kit also includes a customized DC- dies inside the module, while TVJ in the previous section
link capacitor, a gate driver board, and a heatsink for direct represents the average junction temperature of a switch function.

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 180 500

170 450

160 400

150 350

Pout (kW)
140 300

TJX (°C)
130 250

120 200

110 150

100 100

90 50

80 0
200 300 400 500 600 700
DCM1000 three-phase application kit. DCM1000X application kit is
IAC (ARMS)
very similar
Measured maximum chip temperature TJX and inverter output power
TABLE II. DCM1000X SIC APPLICATION KIT SPECIFICATIONS Pout as a function of output current IAC, at 10 kHz
Specifications Value
V. CONCLUSIONS
Dimensions W x H x D 230 x 250 x 95 mm3
In this paper, the Danfoss DCM1000X power module
Volume 5.5 l platform for automotive traction applications has been
Estimated dry weight 4.2 kg
introduced. The advanced packaging technologies adopted in
this module, namely the transfer molding, the DBB, as well as
DC-link capacitance 276 μF the SP3D, have been presented and discussed on how they help
Power loop inductance 9.3 nH meet the toughest requirements in EV drivetrains. After that, a
representative SiC variant of the family, rated at 1200 V and 660
A, is presented to demonstrate its superior electrical and thermal
TABLE III. INVERTER TEST CONDITIONS AT 10 KHZ
performances as a standalone module as well as in a three-phase
inverter setup. Combining the optimal package design and the
Parameters Value latest SiC power MOSFET, the DCM1000X has presented itself
to be a superior module platform for the next-generation EV
DC bus voltage VDC 835 V
traction inverters.
Power factor 0.8
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Modulation index m 0.95
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