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BEE 332 Chapter 7 - Part 1

Lecture Notes

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41 views22 pages

BEE 332 Chapter 7 - Part 1

Lecture Notes

Uploaded by

Jesse Owens
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Chapter 7: Transistor Amplifiers

Harry Aintablian

BEE 332: Spring 2024

3/28/2024 UNIVERSITY OF WASHINGTON AT BOTHELL 1


Outline
› Introduction
› Amplifier concepts
› Small-signal operation and models

3/28/2024 BEE 332 2


Introduction
› Amplifiers usually use electronic devices operating in the active region
– A MOSFET can be used as an amplifier if operated in the saturation or
active region
– A BJT is used as an amplifier when biased in the forward-active region
› In these regions, transistors can provide high voltage, current and power
gains
› Bias is provided to stabilize the dc operating point in the desired region
of operation
› Dc operating point also determines:
– Small-signal parameters of transistor
– Voltage gain, input resistance, output resistance
– Maximum input and output signal amplitudes
– Power consumption

3/28/2024 BEE 332 3


MOSFET Amplifier
› A MOSFET operated in the active (or
saturation) region behaves as a voltage-
controlled current source
1
𝑖 = 𝑘 𝑣 −𝑣
2

› How can we translate output current to


voltage?
– Measure voltage drop across load resistor
› vGS is input signal and RD is load resistor
› However, the output voltage is measured
between drain and ground to maintain a
common ground reference
conceptual circuit
3/28/2024 BEE 332 4
MOSFET Amplifier
› vDS = VDD – iD RD
› vDS is an inverted version of iD RD

› A small signal is superimposed with the dc


signal
› vGS = VGS + vgs and iD = ID + id conceptual circuit
› The small signal (ac signal) vgs is amplified at
the drain, vds
› The input ac voltage is applied to the gate
and the output is measured at the drain
3/28/2024 BEE 332 5
Voltage Transfer Characteristics (VTC)
› vGS determines the region of operation
› As you move toward the triode region (as vGS increases)
vDS decreases
› Need to operate at a point between A and B

conceptual circuit

3/28/2024 BEE 332 6


Linear amplification
› vGS is selected to obtain operation at point Q since the
relationship between VDS and VGS is linear near Q

Linear amplification around Q in


the active region

Biasing the MOSFET amplifier at a point Q located on the segment AB of the VTC
3/28/2024 BEE 332 7
How is linearity maintained?
› As long as vgs is small, its effect on
vDS will be linear

The MOSFET amplifier with a small time-varying signal vgs(t) superimposed on the
dc bias voltage vGS. The MOSFET operates on a short almost-linear segment of the
VTC around the bias point Q and provides an output voltage vds = Avvgs
3/28/2024 BEE 332 8
Small-signal voltage gain
1
𝑣 =𝑉 − 𝑘 𝑅 𝑣 −𝑣
2

𝑑𝑣
𝐴 = @𝑣 =𝑉
𝑑𝑣
Av is voltage gain

𝐴 = −𝑘 𝑉 −𝑉 𝑅

𝐴 = −𝑘 𝑉 𝑅
Gain is negative; inverting
1
amplifier 𝐼 = 𝑘 𝑉
2

𝐼 𝑅 𝐴 (𝑚𝑎𝑥) = − @point B
𝐴 =− /
𝑉 /2

𝑉 𝑉
𝐴 =−
𝑉 /2
3/28/2024 BEE 332 9
Example
› Example 7.1 on page 373

3/28/2024 BEE 332 10


Determining VTC graphically Equation for load line

› Graphical method for obtaining


VTC is shown on graph
› This method is rarely used
› point A: where vGS = Vt
› point Q: where MOSFET is
biased for amplifier operation
› point B: where MOSFET leaves
active region /enters triode
region
› point C: where MOSFET is deep
in triode region and vGS = VDD
3/28/2024 BEE 332 11
Locating the bias point (Q point)
› Two considerations for deciding
Q point
– Required gain
– Allowable signal swing at output
› As Q approaches B
– Gain increases
– Maximum vgs swing decreases

› There is a tradeoff between


voltage gain and linear range of
operation
3/28/2024 BEE 332 12
Small-signal operation and models
› Bias point:

› What is the effect of vgs on iD ?


𝑣 =𝑉 +𝑣

1
𝑖 = 𝑘 𝑉 + 𝑣 −𝑉
2

𝑖 = 𝑘 𝑉 −𝑉 +𝑘 𝑉 −𝑉 𝑣 + 𝑘 𝑣

3/28/2024 BEE 332 13


Small-signal operation and models
𝑖 = 𝑘 𝑉 −𝑣 +𝑘 𝑉 −𝑉 𝑣 + 𝑘 𝑣

dc bias current Linear gain: Non-linear distortion :


term desirable undesirable

To minimize nonlinear distortion, vgs should be kept small.


½knvgs2 << kn(VGS -Vt)vgs
vgs << 2(VGS -Vt)
vgs << 2vOV

› As long as this last condition is satisfied there will not be


distortion

3/28/2024 BEE 332 14


MOSFET transconductance gm
𝑖 = 𝑘 𝑉 −𝑣 +𝑘 𝑉 −𝑉 𝑣 + 𝑘 𝑣

𝑔 = =𝑘 𝑉 −𝑉

Slope is gm

3/28/2024 BEE 332 15


How is voltage gain defined?
𝑣 = 𝑉 − 𝑅 𝑖
𝑔 = =𝑘 𝑉 −𝑉
𝑣 = 𝑉 − 𝑅 𝐼 +𝑖

𝑣 = 𝑉 − 𝑅 𝑖

Isolate vds

𝑣 =−𝑅 𝑖 =-𝑔 𝑣 𝑅

𝐴 = =- 𝑔 𝑅

3/28/2024 BEE 332 16


Small-signal equivalent model
› Accepts vgs as input
› Generates iD at output

› Rin = vgs / ig = very high; why?

Small-signal models for the MOSFET: (a) neglecting the dependence


of iD on vDS in saturation (the channel-length modulation effect) and
(b) including the effect of channel length modulation
3/28/2024 BEE 332 17
Observations VA: Early voltage

› ro = VA / ID 𝑔 = =𝑘 𝑉 −𝑉

› Both gm and ro depend on the


dc bias point
𝐴 = =- 𝑔 𝑅

𝐴 = =- 𝑔 𝑅 |𝑟

3/28/2024 BEE 332 18


More on gm Three equations for determining gm

› MOSFET gain is increased by 𝑔 =𝑘 𝑉 −𝑉

making the channel wider and 𝑔 =𝑘 𝑉 −𝑉


narrower
– gm depends on geometry
› MOSFET gain may be increased by 1
𝐼 = 𝑘 𝑉 −𝑣
VGS
2

𝑔 = 2𝑘 𝐼

› MOSFET gain is proportional to 2𝐼


square root of ID 𝑘 =
𝑉 −𝑣

2𝐼
𝑔 =
𝑉 −𝑉

3/28/2024 BEE 332 19


Alternate small-signal equivalent model: T model

Figure 7.16 Development of the T equivalent-


circuit model for the MOSFET. For simplicity,
ro has been omitted; however, it may be added
between D and S in the T model of (d).

3/28/2024 BEE 332 20


T model with ro
More commonly used

3/28/2024 BEE 332 21


Example
› Example 7.4 on page 395

3/28/2024 BEE 332 22

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