EMH11 / UMH11N / IMH11A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet

Outline
Parameter Tr1 and Tr2 EMT6 UMT6
(6) (6)
VCC 50V (5) (5)
(4)
(4)
(1)
IC(MAX.) 100mA (2)
(1)
(2)
(3) (3)
R1 10k
EMH11 UMH11N
R2 10k (SC-107C) SOT-353 (SC-88)
SMT6
(4)
Features (5)
(6)
1) Built-In Biasing Resistors, R1 = R2 = 10k. (3)
(2)
2) Two DTC114E chips in one package. (1)

3) Built-in bias resistors enable the configuration of IMH11A

an inverter circuit without connecting external SOT-457 (SC-74)
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing Inner circuit
of the input. They also have the advantage of
EMH11 / UMH11N IMH11A
completely eliminating parasitic effects.
OUT IN GND OUT IN GND
5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6)

operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

Application (1) (2) (3) (3) (2) (1)

GND IN OUT
Inverter circuit, Interface circuit, Driver circuit GND IN OUT

Packaging specifications
Package Basic
Taping Reel size Tape width
Part No. Package size ordering Marking
code (mm) (mm)
(mm) unit (pcs)
EMH11 EMT6 1616 T2R 180 8 8,000 H11
UMH11N UMT6 2021 TN 180 8 3,000 H11
IMH11A SMT6 2928 T110 180 8 3,000 H11

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© 2014 ROHM Co., Ltd. All rights reserved. 1/7 2014.09 - Rev.C
EMH11 / UMH11N / IMH11A Data Sheet

Absolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>
Parameter Symbol Values Unit
Supply voltage VCC 50 V
Input voltage VIN 10 to 40 V
Output current IO 50 mA
Collector current IC(MAX.)*1 100 mA
*3
Power dissipation EMH11 / UMH11N 150 (Total) mW
*2
PD
*4
IMH11A 300 (Total) mW
Junction temperature Tj 150 °C
Range of storage temperature Tstg 55 to 150 °C

Electrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>
Parameter Symbol Conditions Min. Typ. Max. Unit
VI(off) VCC = 5V, IO = 100A - - 0.5
Input voltage V
VI(on) VO = 0.3V, IO = 10mA 3.0 - -
Output voltage VO(on) IO / II = 10mA / 0.5mA - 0.1 0.3 V
Input current II VI = 5V - - 0.88 mA
Output current IO(off) VCC = 50V, VI = 0V - - 0.5 A
DC current gain GI VO = 5V, IO = 5mA 30 - - -
Input resistance R1 - 7 10 13 k
Resistance ratio R2/R1 - 0.8 1 1.2 -

*1 VCE = 10V, IE = 5mA,

Transition frequency fT - 250 - MHz
f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.

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© 2014 ROHM Co., Ltd. All rights reserved. 2/7 2014.09 - Rev.C
EMH11 / UMH11N / IMH11A Data Sheet

Electrical characteristic curves (Ta = 25°C)

Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage
(ON characteristics) (OFF characteristics)
100 10m
VO=0.3V 5m VCC=5V
50
2m
20 Ta=100°C

OUTPUT CURRENT : IO [A]

INPUT VOLTAGE : VI(on) [V]

1m
25°C
10 500μ −40°C
5 Ta= −40°C 200μ
25°C
100°C 100μ
2 50μ
1 20μ
500m 10μ
5μ
200m
2μ
100m 1μ
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0

OUTPUT CURRENT : IO [A] INPUT VOLTAGE : VI(off)[V]

Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current
II= 260μA
50 1k
240μA VO=5V
500
220μA Ta=100°C
40
OUTPUT CURRENT : IO [mA]

200 25°C
−40°C
DC CURRENT GAIN : GI

200μA
100
30 180μA
50
160μA
20
20
140μA 10

120μA 5
10
Ta=25ºC
100μA 2

0 0A 1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
0 5 10
OUTPUT VOLTAGE : VO [V] OUTPUT CURRENT : IO [A]

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© 2014 ROHM Co., Ltd. All rights reserved. 3/7 2014.09 - Rev.C
EMH11 / UMH11N / IMH11A Data Sheet

Electrical characteristic curves (Ta = 25°C)

Fig.5 Output voltage vs. output current

1
lO/lI=20
500m
OUTPUT VOLTAGE : VO(on) [V]

200m Ta=100°C
25°C
100m −40°C

50m

20m

10m

5m

2m

1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : IO [A]

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© 2014 ROHM Co., Ltd. All rights reserved. 4/7 2014.09 - Rev.C
EMH11 / UMH11N / IMH11A Data Sheet

Dimensions (Unit : mm)

D
EMT6 A
b
x S A c

Lp
HE
E

Lp
L
e

e1
A

l1

y S
A1

b2 e

Patterm of terminal position areas

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
A1 0.00 0.10 0 0.004
A 0.45 0.55 0.018 0.022
b 0.17 0.27 0.007 0.011
c 0.08 0.18 0.003 0.007
D 1.50 1.70 0.059 0.067
E 1.10 1.30 0.043 0.051
e 0.50 0.02
HE 1.50 1.70 0.059 0.067
L 0.10 0.30 0.004 0.012
Lp - 0.35 - 0.014
x - 0.10 - 0.004
y - 0.10 - 0.004

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
e1 1.25 0.049
b2 - 0.37 - 0.015
l1 - 0.45 - 0.018
Dimension in mm/inches

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© 2014 ROHM Co., Ltd. All rights reserved. 5/7 2014.09 - Rev.C
EMH11 / UMH11N / IMH11A Data Sheet

Dimensions (Unit : mm)

UMT6
D
A c
e
Q

HE

Lp
E

L1
b A3
x S A
A e

e1
l1

y S
A1

S
b2

Patterm of terminal position areas

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
A 0.80 1.00 - 0.039
A1 0.00 0.10 0 0.004
A3 0.25 0.01
b 0.15 0.30 0.006 0.012
c 0.10 0.20 0.004 0.008
D 1.90 2.10 0.075 0.083
E 1.15 1.35 0.045 0.053
e 0.65 0.03
HE 2.00 2.20 0.079 0.087
L1 0.20 0.50 0.008 0.02
Lp 0.25 0.55 0.01 0.022
Q 0.10 0.30 0.004 0.012
x - 0.10 - 0.004
y - 0.10 - 0.004

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
e1 1.55 0.06
b2 - 0.40 - 0.016
l1 - 0.65 - 0.026
Dimension in mm/inches

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© 2014 ROHM Co., Ltd. All rights reserved. 6/7 2014.09 - Rev.C
EMH11 / UMH11N / IMH11A Data Sheet

Dimensions (Unit : mm)

SMT6
D
A
e
c
Q

HE
E

Lp
L1
A3
b
x S A
e

e1
A

l1
A1

y S
S
b2

Patterm of terminal position areas

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
A 1.00 1.30 0.039 0.051
A1 0.00 0.10 0 0.004
A3 0.25 0.01
b 0.25 0.40 0.01 0.016
c 0.09 0.25 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0.059 0.071
e 0.95 0.04
HE 2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.20 0.30 0.008 0.012
x - 0.20 - 0.008
y - 0.10 - 0.004

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
e1 2.10 0.08
b2 0.60 - 0.024
l1 - 0.90 - 0.035
Dimension in mm/inches

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© 2014 ROHM Co., Ltd. All rights reserved. 7/7 2014.09 - Rev.C
 Notice

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