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0% found this document useful (0 votes)
10 viewsComplete notes for college students in english
Uploaded by
yogendra12mbicblyCopyright
© © All Rights Reserved
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Available Formats
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/ 6
ene DIODES
ilicon devoid of electrons
yr density of
Ng = 1017 cm-8, The electric field at x = 0 is
Viem, and the electric field at x = 1 is 50 kV/em
in the positive x direction. Assume that the
electric field is zero in the y and z-directions at
all points.
VfL 4
N,’ = 10" cm”
z=0 x=L
Given g =1.6 x 10“ Coulomb,
& = 8.85 x 10-4 F/em, ¢,= 11.7 for silicon, the
value of L in nm is
1. Consider a region of si n-side
and holes, with an ionized donor
[2016 : 2 Marks, Set-2]
2, As shown, two Silicon (Si) abrupt p-n junction
diodes are fabricated with uniform donor doping
concentrations of Np; = 10% cm~ and
Noy = 1018 em® in the n-regions of the diodes,
and uniform acceptor doping concentrations of
Nai = 1014 cm“ and Naz = 10" em in the p- [2017 : 2 Marks, Sed
regions of the diodes, respectvely. Assuming | In a p-n junction diode at equilibrium, wi
that the reverse bias voltage is >> built-in one of the following statements is NOT
potentials of the diodes, the ratio C/C, of their (@) The hole a1
Peverse bias capacitances for the same applied components are in th
reverse bias, is () The hole and electron dri
P n P n components are in the same
(© On an average, holes and elects
fo: em*|10"em?] _|10" em*|10" em” opposite direction. -
(@ Onan average, electrons drift ant
G, CG in the same direction. ol
Diode 1 Diode 2 (20181
[2017:2 Marks, Set-1] ‘Ap-n step junction diode with « contac 4
of 0.65 V has a depletion width
|
equilibrium. The forward voltage Fe
‘pee correct to two decimal places) 4* -
ect itaisale Bis), Which width rednees to 5 ms — yg
figures represents the electric
6. A junction is made between PS!" of]
‘Nai = 1038 em? and pS
mie pete /
density Nag = 10" em ;
Given: Boltzmannconstant k = 138 A]
fetelectronic chargeag=16*17"
400% acceptorionization. 99 By
‘At room temperature (T = 1 iy}
of the built-in
correct to two decimal pla’
_ junetion will be poss?
es) 4. whieh
correct
7-900.
one of the following
jy the equilibrium
options describes
and diagram at
voces EEE
4. In.an ideal p-n junction with an ideality factor of
1 at T= 300 K, the magnitude of the reverse-bias
voltage required to reach 75% of its reverse
saturation current, rounded off to 2 deci
places, mV. [k = 1.88 x 107 JK*,
hh = 6.625 x 10"J — 5,q= 1.602 10"C}
(2019: 2 Marks}
9. The diffusion capacitance of a p-n junction
(a) decreases with increasing current and
increasing temperature
(b) decreases with decrea:
increasing temperature
(©) inereases with increasing current
increasing temperature
(@ does not depend on current and temperature
[1987 :2 Marks]
sing current and
t and
. Punch through
Collision of earriors with crystal ions
. Earlyeffect
|. Rupture of cov
electric field.
(a) 1-B, 2-A,3-C (b) 1-C, 2-A, 3-B
(1A2B,3C @)1A,2-0,3B
{1988 : 2 Marks]
it shown below the current voltage
|. In the cirouit
“riationship when Dj and Dy are identical is
given by (Assume Ge diodes)
alent bond due to strong
4,
Rr nt
ov -Etaini(f
&r,,{1)
overly)
(o) v= KEainh (3)
@ y= tpsn-0- u
[1988 :2 Marks} EERE Dicces
‘The switching speed of P* ~ N junction (having
heavily doped Pregion) depends primarily on
(a) the mobility of minority carriers in the P*-
region,
(b) the lifetime of minority carriers in the P*-
region
R (c) the mobility of majority carriers in the N-
region
f (@) the lifetime of majority carriers in the N-
: i region
f [1989 :2 Marks)
3 In a junction diode
(a) the depletion capacitance increases with
increase in the reverse bias.
(b) the depletion capacitance decreases with
increase in the reverse bias,
(©) the depletion capacitance increases with
increase in the forward bias.
(d) the depletion \itance is much higher
than the depletion capacitance when it is
forward biased
(1990: 1 Mark]
22m» uniformly doped abrupt p-n junction the
doping level of the n-side is four times the
doping level of the p-side the ratio of the
depletion layer width of n-side verses p-side is
(a) 0.25 )05
()1.0 (d)2.0
[1990:2 Marks}
@ ‘The small signal capacitance of an abrupt
P* —n junction is 1 nF/em? at zero bias, Ifthe
built-in voltage is 1 volt, the capacitance at a
reverse bias voltage of 99 volts in
(@ 10 or
(e) 0.01 (d)100
(1991 :2 Marks]
ng to the below figure the switch S is in
‘position 1 initially and steady state condition exist
“from time t = 0 to t = ty, the switch is suddenly
into position 2. The current I through
he 10 K resistor as a function of time t, from f=
current at t= 0, t= ta and t =).
(give the sketch showing the magnitudes of
17. The built-in potential (diffusion
ap-njunetion Potent
(a) is equal to the difference in the
of the two sides, expressed in vol
(b) increases with the increase in the
levels of the two sides, ‘im,
(c) ingreases with the increase in
(@) is equal to the average of the Ferm, i
of the two sides.
1999; 2:
18, The diffusion potential across a pn june
(@) decreases with increasing dg,
concentration.
() increases with decreasing band gap,
(©) does not depend on doping concentrate
@ increases with increase in dopa
concentration.
[1995 :1 May
19. The depletion capacitance, C; of an abrupt:
junction with constant doping on either sé
varies with R.B. Vz as
(a) C= V_ (b) C,
(1995 : 1 Mart
20. The static characteristic of an adequttl]
forward biased p-n junction is a straight! ‘
the plot is of
(a) log I vs.log V
(©) IvslogV
(b) log Ivs V
(@)IvsV
[1998:1 Na
@pruncion in series witha ocho
is forwarded biased. So that a current
flows. If the voltage across this combinsi#
instantaneously reversed at t = 0. 0%
through diodes is approximately give?
(a)OmA (b) 100 mA
(€)-100 mA (a) 50 mA.
11998:2!
22. In the figure, silicon diode is carryiné™
current of 1 ma. When the tempers
diode is 20°C, Vi is found to be 70088
temperature rises to 40 °C, Vo
approximately equal to ‘a1 900 K, for a diode current of I mA, a certain
rmanium diode requires a forward bias of
0.1435 V, whereas a certain Silicon diode
requires a forward bias of 0.713 V. Under the
conditions stated above, the closest AY
approximation of the ratio of reverse saturation
current in germanium diode to that in silicon
(4x 108 (d)8 x 109 (a)0 = 26 mi ait
permittivity of silicon ¢,, = 1.04 x 104 Fa
[2011 :1 Mark} The built-in potential and the depletion nit
(88) Thei-v characteristics ofthe diode in the circuit of the diode under thermal equilib
given below are conditions, respectively, are
(a) 0.7 Vand 1x 10“cm
(b) 0.86 V and 1 x 104m
(c) 0.7 V and 3.3 x 10-5em
(@) 0.86 Vand 3.3 x10 em
(2014: 2 Marks 5
region of negative differential resisa™
‘observed in the current voltage cht
of a silicon PN junction if.
#
(@) both the P-region and the N-reei
‘The current in the circuit is
(a) 10 mA (b)9.3 mA heavily doped 4
(©) 6.67mA @62mA (©) the region is heavily doped om
: (2012: 1 Mark} the P-region ol ®
(©) the P-region is heavily doped co™!
1a forward biased pn junction, the sequence
nts that best describes the mechanism of the N-region
ad) (@ an intrinsic siicon region i Mig
ction, and subsequent diffusion and eepeatee 4 the
bination of minority carriers. ae
Pel esse
is 0.75 V. If its junction capacitan®
Teverse bias (Vq) of 1.25 V is 5 pF; th
G,(in pF) when Vp = 7.25 V is —
2 fore silicon diode with long Pand N region
a opter and donor impurity concentrations
wet» 10! em! and 1 x 10" ome, respectively
Frelifetimes of electrons in P region and holes
Py region are both 100 us. The electron and
coefficients are 49 cm?s and 36
Girinsicearrier concentration is 1 x 1018 ems,
thig= 1.6% 101°C. When a forward voltage of
$08 mV is applied across the diode, the hole
it density (in nA/cm?) injected from P
region to N region is
(2015: 2 Marks, Set-1]
(3) me electri feld profile in the depletion region
ofa pn junction in equilibrium is shown in the
“figure. Which one of the following statements
isNOT TRUE?
EViem)
05
1:0 Xm)
‘The left side of the junction is n-type and
the right side is p-type
~ sand p-type depletion regions
rence across the depletion
region has a doping
‘em, then the doping
n-type region will be
1:2 Marks, Set-3]
with a uniform
‘of 10% em? on
donor doping
Consider avalanche breakdown in a
junction. The n-rogion is uniformly
a donor density Np. Assume that
‘occurs when the magnitude of the el
at any point in the device becomes
critica field Ey. Assume Bq», to be independent
of Np. Ifthe built-in voltage of the p* n junction
is much smaller than the breakdown voltage,
‘Va, the relationship between Vue and Np is
given by
(Vag * Np = constant,
doped with
[2016 :2 Marks, Set-2)
‘The IV characteristics of three types of diodes
at the room temperature, made of
semiconductors X, Y and Z, are shown in the
figure. Assume that the diodes are uniformly
doped and identical in all respects except their
materials. If Eyx, Eyy, and Ey are the band gaps
of X, Yand Z, respectively, then
1
jee aoe,
v
(a) Exx>Eyy> By
©) Eye= Ey = Eg
(© Exe Ey
