DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D186

2N3904 NPN switching transistor

Product specication Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 15

Philips Semiconductors

Product specication

NPN switching transistor

FEATURES Low current (max. 200 mA) Low voltage (max. 40 V). APPLICATIONS High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. PINNING PIN 1 2 3 collector base emitter

2N3904

DESCRIPTION

1 handbook, halfpage

2 3

1 2 3

MAM279

Fig.1

Simplified outline (TO-92; SOT54) and symbol.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb 25 C IC = 10 mA; VCE = 1 V IC = 10 mA; VCE = 20 V; f = 100 MHz ICon = 10 mA; IBon = 1 mA; IBoff = 1 mA open emitter open base CONDITIONS 100 300 MIN. MAX. 60 40 200 500 300 240 MHz ns V V mA mW UNIT

1997 Jul 15

Philips Semiconductors

Product specication

NPN switching transistor

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; note 1 IC = 50 mA; IB = 5 mA; note 1 base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = 10 mA; IB = 1 mA; note 1 IC = 50 mA; IB = 5 mA; note 1 IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz 60 80 100 60 30 300 300 200 200 850 950 4 8 MIN. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector 65 65 MIN.

2N3904

MAX. 60 40 6 200 300 100 500 +150 150 +150

UNIT V V V mA mA mA mW C C C

UNIT K/W

MAX. 50 50

UNIT nA nA

mV mV mV mV pF pF MHz

1997 Jul 15

Philips Semiconductors

Product specication

NPN switching transistor

2N3904

SYMBOL F

PARAMETER noise gure

CONDITIONS IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz

MIN.

MAX. 5

UNIT dB

Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = 1 mA 65 35 35 240 200 50 ns ns ns ns ns ns

andbook, full pagewidth

VBB

VCC

RB (probe) oscilloscope 450 Vi R1 R2

RC Vo (probe) 450 DUT oscilloscope

MLB826

Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = 1.9 V; VCC = 3 V. Oscilloscope input impedance Zi = 50 .

Fig.2 Test circuit for switching times.

1997 Jul 15

Philips Semiconductors

Product specication

NPN switching transistor

PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads

2N3904

SOT54

E d A L b

1
D

e1 e

3
b1

L1

2.5 scale

5 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5

Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28

1997 Jul 15

Philips Semiconductors

Product specication

NPN switching transistor

DEFINITIONS Data sheet status Objective specication Preliminary specication Product specication Limiting values

2N3904

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1997 Jul 15

Philips Semiconductors

Product specication

NPN switching transistor

NOTES

2N3904

1997 Jul 15

Philips Semiconductors a worldwide company

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1997

Internet: http://www.semiconductors.philips.com

SCA55

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Printed in The Netherlands

117047/00/02/pp8

Date of release: 1997 Jul 15

Document order number:

9397 750 02642