Shenzhen Tuofeng Semiconductor Technology co.

, LTD

4606
Complementary High Density Trench MOSFET

PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)

VDSS ID RDS(on) (m-ohm) Max VDSS ID RDS(on) (m-ohm) Max
28 @ VGS = 10 V,ID=6.9A 50 @ VGS = -10V,ID=- 6.0 A
30V 6.9A -30V - 6.0 A
42 @ VGS = 4.5V,ID=5.0A 80@VGS = -4.5V, ID=- 5.0A

Absolute Maximum Ratings (TA=25oC, unless otherwise noted)

Symbol Parameter N-Channel P-Channel Units

VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±20 ±20 V
ID Drain Currenta 6.9 - 6.0 A
b *1
IDM Drain Current (Pulsed) 28 -26 A
a
Is Drain-Source Diode Forward Current 2.5 -2.3 A
a o
Total Power Dissipation @TA=25 C 2.0 2.0
PD a o
W
Total Power Dissipation @TA=75 C 1.2 1.2
Tj, Tstg Operating Junction and Storage Temperature Rangea -55 to +150 -55 to +150 °C
RθJA Thermal Resistance Junction to Ambienta 63.2 63.2 °C/W

a: Surface Mounted on FR4 Board , t ≤ 5sec .

b: Pulse width limited by maximum junction temperature.

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 Shenzhen Tuofeng Semiconductor Technology co., LTD

4606
N-Channel Electrical Characteristics(TA=25°C, unless otherwise noted)
Symbol Characteristic Test Conditions Min. Typ. Max. Unit

• Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 50 nA
IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA

• On Characteristicsc
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 1.4 3.0 V
VGS=10V, ID= 6.9A - 25 28
RDS(on) Drain-Source On-State Resistance mΩ
VGS=4.5V, ID= 5.0A - 38 42
gfs Forward Transconductance VDS=5V, ID= 5.0A - 6.0 - S

• Dynamic Characteristics d

Ciss Input Capacitance - 398 -

Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz - 67 - pF
Crss Reverse Transfer Capacitance - 61 -

• Switching Characteristicsd
Qg Total Gate Charge - 7.4 -
Qgs Gate-Source Charge VDS=10V, ID=1A, VGS=10V - 1.7 - nC
Qgd Gate-Drain Charge - 1.3 -
td(on) Turn-on Delay Time - 8.0 -
tr Turn-on Rise Time VDD= 15V, RL=15Ω, ID=1A, - 11.2 -
nS
td(off) Turn-off Delay Time VGEN=10V, RG=6Ω - 17.2 -
tf Turn-off Fall Time - 7.54 -

• Drain-Source Diode Characteristics

VSD Drain-Source Diode Forward Voltage VGS=0V, IS=2.0A - - 1.0 V

Note:

b: Pulse width limited by maximum junction temperature.

c: Guaranteed by design , not subject to production testing .

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 Shenzhen Tuofeng Semiconductor Technology co., LTD

4606
P-Channel Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol Characteristic Test Conditions Min. Typ. Max. Unit

• Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -50 nA
IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA

• On Characteristicsc
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 -1.3 -2.0 V
VGS=-10V, ID=-6.0 A - 40 50
RDS(on) Drain-Source On-State Resistance mΩ
VGS=-4.5V, ID=-5.0A - 70 80
gfs Forward Transconductance VDS=-10V, ID=-6.0A - 12.7 - S

• Dynamic Characteristics d

Ciss Input Capacitance - 930 -

Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz - 121 - pF
Crss Reverse Transfer Capacitance - 102 -

• Switching Characteristicsd
Qg Total Gate Charge - 20 -
Qgs Gate-Source Charge VDS=-15V, ID=-3A, VGS=-10V - 4.1 - nC
Qgd Gate-Drain Charge - 2.6 -
td(on) Turn-on Delay Time - 9.5 -
tr Turn-on Rise Time VDD=-15V, RL=5Ω, ID=-3A, - 5.4 -
nS
td(off) Turn-off Delay Time VGEN=-10V, RG=6Ω - 42.5 -
tf Turn-off Fall Time - 13.6 -

• Drain-Source Diode Characteristics

VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-2.0A - - -1.0 V

Note:

b: Pulse width limited by maximum junction temperature.

c: Guaranteed by design , not subject to production testing .

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 Shenzhen Tuofeng Semiconductor Technology co., LTD

4606
Characteristics Curve(N-Channel)

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 Shenzhen Tuofeng Semiconductor Technology co., LTD

4606
Characteristics Curve(N-Channel)

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4606
Characteristics Curve(P-Channel)

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Characteristics Curve(P-Channel)

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