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Captura de Pantalla 2023-12-02 A La(s) 18.10.01

manual servicio fx-940

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0% found this document useful (0 votes)
35 views69 pages

Captura de Pantalla 2023-12-02 A La(s) 18.10.01

manual servicio fx-940

Uploaded by

warrior1976
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 69

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Glx-g49A

CONTENTS

1. SPECIFICATIONS 3
2. FRONT PANEL FACILITIES ... 5

3. CONNECTION DIAGRAM I
4. BLOCK DIAGRAM 11

5. LEVEL DIAGRAM 13

6. CIRCUIT DESCRIPTIONS
6.1 FM Tuner Section 14
6.2 AM Tuner Section 14
6.3 CD-4 Demodulator Section 16
6.4 SO Full Logic/RM Decoder Section 20
6.5 Control Amplifier 23
6.6 Power Amplifier Section 24
6.7 Protection Circuit 24
7. DISASSEMBLY
7.1 Wooden Gabinet 26
7.2 Bottom Plate . 26
7.3 Front Panel . 27
8. ADJUSTMENTS
8.1 AM Section 28
8.2 FM Section 29
9.3
C FM MPX Section 30
8.4 Power Amplifier Section 31

9. DIAL CORD STRINGING 32


10. PARTS LOCATIONS
10.1 Front View 1 33
1O.2 Front View 2 35
10.3 TopView ...... 37
10.4 Bottom View. 39
10.5 Rear View 41

11. EXPLODED VIEWS 43


12. PACKING 52
13. SCHEMATIC DIAGRAMS, P.C. BOARD PATTERNS AND
PARTS LISTS
13.1 Schematic Diagrams and Miscellaneous Parts . 53
'13.2 TunerAssembly(AwE-041) .... 61
13.3 Headphone Jack Assembly (AWX-054) . . G7
13.4 Power Supply Circuit B Assembly (AWR-039) 68
13.5 CD-4Assembly(AWM-076) ...... 69
13.6 SO/RM Decoder Assembly (AWM-077) 77
13.7 ProtectionCircuitAssembly (AWM-079) ...... 83
13.8 Control Amplifier Assembly (AWG-023) 86
13.9 Power Supply Circuit A Assembly (AWR-080) 91
13.10 SwitchCircuitAssembly (AWS-048) ...... 94
13.11 Power Amplifier Assembly (AWH-027) gB

14. PARTS LIST OF EXPLODED VIEWS ..... .102

NOTE:
THE MODEL QX-949A COMES IN TWO VERSIONS DISTINGUISHED AS FOLLOWS:
Round label on
rear panel Voltage Type

110V, ]-20V,130V,220V,
F and 240V (switchable) General export model

KCU 120V only


UL (U.S.A.) and
CSA(Canada) approved
ABOUT 2CH POWER BOOSTING SWITCH
To increase available power when using the QX-949A for
2-channel reproduction, a convenient power select fea-
ture is incorporated. The covered compartment on the
rear panel houses a reversable connector panel. When
added power is desired during 2-channel operation tum
off set power. Open the cover, remove the connector
panel and rotate it 180o, then re-insert it and close the
cover. Be sure to reverse the connector again before
retuming to 4-channel operation.

These illustrations show how the boosting switch is employed.

@l

:1 x./
J
Loosen screw to open cover Pull out connector Rotate connector 180" and re-insert it

CHANGING LINE VOLTAGE SETTING AND FUSE


(F MODEL)
To remove the fuse, unscrew the fuse cap located in the
center of the line voltage selector and withdraw it,
together with the fuse. Next, pull the line voltage
selector plug out of its socket, rotate it until the
cutaway aligns with the appropriate line voltage marked
on the back of the unit, then push it back into its socket.
'#-qF
PHTLLTPS
@
LECTOR PLUG

It is important to check the rating of the fuse; a 3A


fuse should be used with either 220Y or 240V, while a
6.4 fuse should be used for 110V, 720V, or 130V
operation. If the fuse rating is correct, reinsert it and
screw in the fuse cap.
No selector plug is provided for "KCU" type (120V only
model).

a
Glx-sl4slA

5. LEVEL DIAGRAM

1T

rl
ttlll tlr
tigmy -1

-i

. 20ll Power boosting switch is set at 40ll

.trequency at lkllz

c
€a

oe

o
o

13
6. CIRCUIT DESCRIPTIONS
6.1 FM TUNER SECTION a DC voltage is produced. By setting the FM
Front End Muting switch to ON, pin 12 is connected to pin
This consists of. a 4-gang variable capacitor tuning 5, and the analog switch in HA1137 is operated
circuit, dual-gate MOS FET RF amplifier and ON-OFF to perform muting.
mixer, and local oscillator with buffer. By employ-
ing a glounded gate-Z of the dual-gate MOS FpT, Multiplex Decoder
the circuit becomes equivalent to a cascade ampli- Demodulation is performed by switching detection
fier, providing large gain with stable operation in with the circuit contained in the IC (HA1156),
the RF amplifier. depicted in Fig. 3. A phase locked loop (PLL)
In the mixer stage, the signal is applied from the produces a 38kHz square wave synchronized to
local oscillator to gate-2. This method allows input the pilot signal. The two gates are alternately
power from the local oscillator to be minimized switched ON-OFF by this signal to derive the L
and features low mutual interference. A variation and R channels from the composite signal. By
of a Clapp circuit forms the local oscillator and by detecting the pilot signal level, the switching signal
inserting a buffer amplifier between it and the from PLL to demodulator is operated ON-OFF.
mixer, the oscillator load is reduced and waveform The STEREO indicator lights at the same time.
distortion suppressed. The oscillation frequency
drawing effect is also eliminated, to provide 6.2 AM TUNER SECTION
extremely stable operation even with strong inputs.
This consists of a 3-gang variable capacitor tuning
lF Amplifier and Detector circuit, a dual element ceramic filter and an IC
These are composed of three dual-element ceramic (HA1138). The IC (Fig. 4) contains an RF stage
filters and two integrated circuits. The first stage and two IF amplifier stages.
IC (HA1201") incorporates a current limiter, while
the second stage IC (HA1137) is shown in Fig. 2.
When pin 12 of HA1137 is at more than xTOkHz
detuning and with an extremely low input level,

40ll TAPT OOI.BY ilR


2Cil TAPI PB @- AOAPIOR
Rtc trce,
PB @]
ootJT Power ampli{ier SPIA[TRS
PB
I tOtX YOLUilt (B)
4Cll-it
OWPUI
PX
REc Qi I
---Q-: C}lI

{t c0t{TR0t -$:
-- !-:
8ili
CHa
^

PB
="x&
RTC -)rV_ cllr
PB
ffic 3il1'
CM
cltz 7 LOw iltTtR
a
PB llr0il il [TtR Pltoilts

lux g_- ffic


P8
OllT
It{
a I rnoti
Pll0t{0 Rtc N ffAR
Pll0t{0 4
cMl q
PH0il0
Plr0il0 4channel
AUX level indicator
Y* PB

.ra'i REC

PB

cD-4,2Cll Rtc

Fis. 1

14
ex-s'4slA

IUI{ll{0 meter

L nr out
0tt
t %ott

Switching signat ( 3gkllz)

lC: HA1156

lC: HA1138

Fis.4

15
6.3 CD-4 DEMODULATOR SECTION signals, as the difference signal is demodulated
from a frequency modulated 30kHz carrier (sub
Fig. 5 illustrates the composition of this section. signal), and the sum signal varies according to the
cartridge output level (though indirectly related),
Sum Signal System level matching becomes necessaq/.
IC HA1452 is an orthodox 2-channel equalizer In other than the CD-4 mode, a fixed resistor
amplifier. In CD-4 operation, a variable resistor is replaces of the variable resistor to provide a fixed
inserted in the NFB circuit to provide separation gain (35.6d8 at lkHz) equalizer amplifier. The
control by varying the main signal (sum signal) inclusion of a balanced power supply with this
gain. Although the final objective of the CD-4 circuit maintains input and output point potentials
demodulator is to matrix the sum and difference at 0V, preventing click noises when switches are
operated. The 100kS2 impedance of this circuit is
nN452-% r. P. t. changed to 50kA by inserting two 100k0 resistors
in parallel during other than CD-4 operation.

HAI 335

Hl Aoc,'p r i [)e.emnhasis

Separati on
llr-r I f-{-l
control

A. 11. R. S.
Fig. 5

RECORDING AND PLAYBACK OF CD.4 DISCS


The CD-4 disc is a recent development. Being a stereo record, occupying the 30Hz - 15kHz audio
"Discrete" 4-channel medium, it features excellent band and conveying the "Front+Rear" sum inform-
channel separation when played over suitable 4- ation.
channel equipment, but can also be played as a From these sum and difference signals, the original
conventional 2-channel stereo record. 4 channel signals are retrieved in a series of
Fig. 6 shows the configuration of signals present algebraic operations performed in the demodulatori
in a CD-4 record. (Lf+Lr)+(Lf-Lr\=ZLf.
Each of the two sub-signals occupies a frequency
modulated supersonic carrier with a center fre-
(Lf+Lr)-(Lf-Lr)=2Lr
quency of 30kHz.
(Rt+Rr)+(Rf-Rr)=2R,t
The sub-signal conveys the "Front-Rear" differ-
(Rf+Rr)-(Rf-Rr):2Rr
(6R"
ence information. where stands for Right, "L" for Left, "f" for
The main signals are recorded as a conventional front, "r" for rear.

DISC SURFACE
LEFT CHANNEL R]GHT CHANNEL
STYLUS

J J
lrJ UJ

lrJ llJ
J -J

t t
20kHz 20kHz
Fis.6
Glx-g4s'A
The equalizer amplifier output goes through a low
pass filter (LPF) to remove the sub signal (30kHz
FM signal). This LPF is an active filter whose
frequency response is shown in Fig. 7.

_
\
t0

6
E

=o
-?n
e

Fig.8
-30

I *FM Demodulator
-{0 The block diagram of the PLL FM demodulator
circuit is depicted in Fig. 9. This circuit consists
5I I 0k 30t 50k I 00r
of a voltage control oscillator (VCO), phase com-
Frequency (llz)
Fig.7 parator (PC), DC amplifier (A) and low pass filter
(LPF), with a type of NFB loop following the
Difference Signal System input signal. The VCO oscillates at a controlled
The sub signal is taken from the equalizer amplifier frequency according to the LPF output voltage.
NFB circuit. As it does not pass through the RIAA A voltage proportional to the phase difference
playback standard equalizer, it possesses a flat between the input signal and VCO oscillation out-
frequency response. After passing through a high put is generated in the PC. By using this voltage
pass filter (fc = 27kHz, L?dBloct.), the sub signal to control the VCO oscillation, the oscillation
enters IC HA1335. becomes locked to the input signal phase.
This IC contains a phase locked loop (PLL) FM If the input signal is frequency modulated, the
demodulator circuit, an automatic gain control control signal obtained from the LPF becomes the
(AGC) circuit to stabilize the PLL input signal, FM demodulated output. With an excessively
a muting circuit to cut the demodulated output large frequency deviation of the input signal, which
in the absence of an input signal, and a demodu- the PLL circuit cannot follow, the lock becomes
Iated signal amplifier. In addition to the IC, a disengaged. The frequency range in which locking
de-emphasis circuit, automatic capture range con- can be performed is termed the lock range.
trol (ACC) circuit, LPF, HPF, indicator lamp drive, Locking also becomes impossible when the VCO
and other circuits are used to demodulate the dif- free running frequency (oscillating frequency with-
ference signal from the sub signal. out an input signal) and input signal frequency are
excessively separated. The frequency range in
*AGC Amplifier
which locking can be performed is termed the
Fig. 8 shows the AGC amplifier principle. In this capture range. The locking and capture ranges are
circuit, e1 is the input signal voltage, e2 the output determined by the PLL loop gain and LPF con-
signal voltage, Vr the reference voltage, and Vb stant.
the control voltage.
If Vb is much greater than Vr, 13 becomes approx-
imately equal to I, and e2 o. 0. Conversely, if Vb
is much less than Vr, 13 becomes approximately
equal to I, and e, reaches a maximum (determined
by the murimum gain of the AGC amplifier). The
amplifier gain can therefore be controlled by Vb
in this manner, Vb being obtained from a synchro-
nous detector.

17
6.4 SO FULL LOGIC/RM DECODER SECTION If the sound source is CF (center front) or CB
(center back), front to rear separation cannot be
SQ System obtained since LF', RF', LB' and RB' all become
The Matrix four channel system utilizes 2-channel the same volume. The logic circuit is provided for
media (tape, records, broadcasts, etc.) to transmit improve this effect.
4 or more channel signals. Four channel playback With CF crosstalk to LB and RB is at out of and
systems employ matrixing 4-2-4 (n-2-$ to convert since with CB crosstalk to LF and RF is also at
2-channel into 4-channel. The main systems cur- out of, only these anti-phase components are
rently available for this purpose are RM (Regular cancelled. This is termed front-back logic. The
Matrix) and SQ (Stereo Quad). objective of full logic is to deal not only with CF
With the RM system, if the only sound source is and CB sound sources, but also with various other
LF (left front), - 3dB crosstalk occurs in the RF directions.
(right front) and LB (left back). In the SQ system Front-back logic performs CF and CB detection,
however, - 3dB occurs in LB and RB (right back). while wave matching logic performs LF, RF-, LB
RM and SQ are therefore not compatible. and RB detection. The combined detector signal
Fig. 13 shows the basic SQ decoder construction passes through a time constant circuit and is
and signal vectors. LT and RT are combined in LB applied to the gain control circuit, where gain is
and RB, while LF' and RF' are taken directly controlled in order to adequately reduce the cross-
from LT and RT. LB' and RB' are obtained from talk level.
LT and RT by phase shifting and blending. But
LB' and RB' contain respective LF, RF other than
necessary components. Left and right separation
remains good since LF' does not combine with
RF, and RF' does not combine with LF.

t-;- [r

.- tt ror., I o'70?Rr

I o.ion,
0. 707[ I

Rt
0. 107R s

I t'
@ F-RB
l o' 7o7t
n'l
B
o. IoTRr
0. 7071 s
4 o.lolnt
, I > Rr
0.707t 0

t-___*_

Fis. 13

eo
GIX-g4slA

Circuit Composition 2SK40V (FET) is employed for back blending.


Three ICs are employed, as shown in Fig. lb. With a CF sound source, it functions to cancel
M5165LP is an SQ basic decoder and can function the mutually opposite crosstalk phase to LB and
€rs an SQ decoder without independent logic. RB. This is an N channel depletion type junction
Although a phase shift network is not included, FET and when the gate voltage is zero) the channel
by a CR network, this IC perform to shift the is already established. LB and RB become normally
phase 90' with cover wide range. A selector switch blended for this reason, and the gate becomes open
also permits the IC to be used as an RM decoder. only in the case of a single signal from LB or RB.
During RM, a blend resistor is added at the front,
while the rear is blended internally by the IC and
taken from separate terminals.
CX.049 is a high density full logic IC incorporating
both wave matching and front back logic. CX-718D 10
7

is a gain control IC and contains four MOS FETs


to form a variable resistance voltage control circuit. l0 6

Since these MOS FETs are P channel enhancement


types, equivalent internal resistance becomes in- Rn.

finite when gate voltage is zero. By applying a (s2 )

negative voltage to the gate (Fig.!4), the equivalent


internal resistance can be varied from infinity to 10,

several hundred ohms.


l0 3

10,

-l -2
Y6s(v )

Fis. 14

r--- tull logic


-_J r---
Basic decoder
-----1 I i

iti iHi
cx"7l 8D

u----l
Time constant circuit

F is. 15
Operating Description For rear control, wave matching logic produces a
The input signal (LT & RT) enters the Se basic negative voltage with respect to afront single signal
decoder (M51651P), where 4-channel signals LF, (LF or RF) and a positive voltage with respect to
RF, LB and RB are obtained by the Se decode a rear single signal (LB or RB). Front control is
matrix, then these signals enter the gain control, also performed by producing the reverse polarity
back blend and logic cirbuits. The front-back logic of these voltages.
produces a positive voltage with a CF sound The rear control voltage passes through the time
source, and a negative one with a CB source. This constant circuit and is applied to the gates of
voltage passes through the time constant circuit MOS FETs for LB and RB gain control. The front
and is applied to the gates of the MOS FETs for control voltage passes through the time constant
LF and RF gain control. circuit and is applied to the gates of the junction
As these FETs are P channel enhancement types, FET for back blend and the MOS FETs for LF
their equivalent internal resistance decreases only and LB gain control. As the junction FET is an N
when a negative voltage is applied. Front (LF & channel depletion type, LB and RB are normally
RF) output signal levels are attenuated with a CB blended, but the device becomes open when a
sound source. negative voltage is applied.
The detector outputs of the full logic IC (CX-049)
with respect to sound source are as shown in the
following table.

LF RF LB RB CF CB Gain control*

FIB F 0 0 0 0 + LF, RF
logic
B 0 0 0 0 + IF iF

W/M F + + 0 0 LF, RF***


logic
B + + 0 0 LB, RB

*Gain control operates (attenuates) with (-) detecting


mode.
*xFront bach logic output B is not employed.
x**Back blend is not p?rformed only when waue matching
logic output F mode is (-).

CAUTI ON
The gain control lC (CX-718D) is an MOS (metal oxide semiconductor) type and subject to
dielectric breakdown from static electricity. Note the following precaution when handling.
*Do not remove the aluminum
cap from the tC until it has been instalted in teh circuit. First
solder the lc to the circuit board, then remove the aluminum cap.

?2
BX.949A
6.5 CONTROL AMPLIFIER CIRCUIT
The control amplifier circuit of the QX-949A is
the NFB type, using a FET (fietd effect transistor)
in the first stage.
The FET amplifier being a controlable voltage
type, which holds"the input impedance constant,
even if the level of the NFB changes, and has
additional advantage as a coupled circuit, as the
input impedance can be raised
Low Frequency Control
Fis. 16
The low frequency control circuit is shown in
Fig. 16, and the equivalent circuit, when boosting
low frequency, is shown in Fig. 17.
As the parallel impedance of VR1 and C29, in
Fig. 17, is high at low frequency, the volume of
the NFB decreases and the gain in the low
frequency range increases.
The equivalent circuit, when cutting out low
frequencies, is shown in Fig. 18. In this case, the
input signal is applied to Q9, through the parallel Fig. 17
impedance of VR1 and C33, which is high in the
low frequency range and suppresses the lower
frequency signals.

High Frequency Control


The high frequency control circuit is shown in
Fig. 19, and the equivalent circuit, when boosting
high frequencies, is shown in Fig. 20.
In this circuit, the input signal is applied to Q9
through the parallel impedance circuit. This imped-
ance is small in the high frequency range and Fis. 18
produces a signal with an enhanced high range.
Fig. 21 shows the equivalent circuit when cutting
out high frequencies. As the impedance of R53,
R41 and C4L of the circuit becomes small, the
level of the NFB increases and the gain of the
circuit decreases.

F is. 19

rN i-*t--i
Za

Fig. 20 Fig.21

23
6.6 POWER AMPLIFIER SECTION Relay Driving Circuit
This unit possesses four power amplifiers. The Q7 - Q9, in Fig. 22, comprise the relay driving
circuitry employs a balanced power supply and circuit.
consists of direct-coupled Darlington connection In the normal condition reverse bias is applied to
pure complementary OCL amplifiers. By applying the base of Q7, and Q7 is in a cutout condition.
1007o DC NFB from the output stage center point When one of the above mentioned detection
to the first stage differential amplifier, circuit DC circuits goes on, current flows through R28, the
gain becomes 0dB. Since the center point potential base potential falls and Q7 is turned on. Con-
is determined by the first stage base potenfial, sequently Q8 comes on and Q9 goes off. When
temperature compensating and fine adjustment Q9 goes off, the current of the relay circuit is
circuits are included in the first stage base bias cut, to release the switch of the output circuit.
circuit to maintain the center point potential at 0V. When the power switch is turned oo, a delay
operation occurs in this circuit. R33, R34 and
2-channel Power Boosting Circuit C7, in the base circuit of Q9, are the time con-
The power supply can be boosted when using this stant elements which determine the delay time.
unit as a Z-channel stereo amplifier (using only When the power switch is switched on, C7 charges
ch1 and ch3, and with the MODE switch set to to a potential of +30 volts through R33 and R34,
zCH). Power transistors of channels 1 and 3 are and Q9 is kept in the OFF condition during this
of higher rating than those of channels 2 and 4. time. When the power source is switched off the
Their supply voltage can be raised during 2-channel muting operation of Q8 prevents shock noise.
operation to provide increased power to each chan- In the normal condition, the potentials of +30
nel. volts and - 5.1 volts are applied to Q8 through
Power boosting is available by turning over the R31 and R32. The resultant potential at the base
rear panel plug. This raises the power transformer of Q8 is -1 volt in the cutout condition. When the
secondary winding taps and opens CHz and CH4 power supply is turned off, the potential of - 5.1
power amplifier output circuits. volts disappears immediately, due to the small
For safety reasons, a microswitch in the power time constant of the power circuit. Thus a positive
transformer primary side cuts off the power supply base potential remains, switching Q8 on, which in
when the selector plug cover is opened. turn switches off Q9 and hence the relay.
6"7 PROTECTION CIRCUIT
This protection circuit functions to protect the
speakers from damage due to short-circuit of the
load, etc., and performs a muting operation to cut
Relay driving circuit
noise and distortion which occur when switching
the power on and off.
The circuit is shown in Fig. 22, and consists of a
bridge type over-current and overload detector, a
differential amplifier DC voltage detector, and a
power switch on/off detector section.

---- r--r-iivl

L ----
---- --l
DC voltage
detection circuit

Fig.22
Glx-g4slA
Over-current and Overload Detection
The equivalent circuit of this detector section is
shown in Fig. 23, andFig. 24 shows the equivalent
circuit at the time of a positive half cycle. When
this equivalent circuit is overloaded, the balance of
the bridge, formed by REI-, R1, Rg and RL, is
disturbed, and a potential is produced between b
and a in such a direction that Q1 is turned on. Relay driving circuit

When Q1 is turned oo, the collector- current


increases, the relay driving circuit functions and
the relay switch of the output circuit is turned off.
After the cause of the overload is removed, the
bias of Q1 is reduced and the relay switch turns
on to automatically restore normal operation,
Fig. 25 shows the equivalent circuit at the time
of a negative half cycle. In this circuit a potentiat Fig.23
is produced between b and e as above, and Q1
is turned on.
Detection of DC Voltage
This is a differential amplifier consisting of Qb
and Q6, as shown in Fig. 26. The bases of Qb
and Q6 are connected to the junction-points of
the power amplifiers. When the DC balance of the
power stage is lost for some reason, a potential
difference is produced in the input signal to the
differential amplifier, and the collector currents of
Fig.24
Q5 and QG are put out of balance. Thus, the relay
driving circuit functions, and the relay switch is
turned off.

Fis.25

Power Relay driving circuit


Amplifier

r______ _J

Fis.26
7. DISASSEMBLY
7.1 WOODEN CABINET
Unscrew the two screws holding each side, then
lift the back of the wooden cabinet upward.
a"'.rr--//12.j1
,. 2 /
/,'//t/t/.//./..:' '
-,.

7.2 BOTTOM PLATE


Unscrew a total of the 14 screws holding it in place.

26
GIX-g4gA
7.3 FRONT PANEL
Pull off knobs. For TUNING knob, loosen the
setscrews with a hexagonal wrench before remov-
ing it. Unscrew the two screws in the upper edge
of the front panel, and the three nuts from the
shafts. Then pull the panel gently forward.

N \

27
8.3 FM MPX SECTION 3. Connect the oscilloscope horizontal inputs to
1. Set FM signal generator at external modulation. MPX sG's PILor our terminals and vertical
Connect to unit's FM antenna terminals via inputs to No. 18 terminal of tuner assembly.
300-ohm balanced dummy antenna. Set FM SG 4. Tune unit and FM SG to g8MHz.
output to 60d8. 5. Produce a Lissajous pattern on oscilloscope and
2. Adjust MPX signal generator to obtain main adjust VRl to make the pattern still.
signal modulation of lkHz, 67.5kHz frequency 6. Then set signal generator for modulation of L
deviation. Connect to FM SG's external modu- (later R) and pilot. Adjust vR2 to obtain
lator terminals. muimum channel separation.

Tuner assembly

o Er 4 o
"@

Oscilloscope FM signal generator


o t-,l
-o l-7-l /' ^ \
/\
o
L
c, (o)
\:_,,
O oo

MPX signal generator

30
GIX-g4gA

8.4 POWER AMPLIFIER SECTION amplifier has been come into operation, a defect
1. Do not connect load to speaker terminals" in the output transistors can be suspected.
VOLUME Control set at minimum. Check the output stage.
2. Set power boosting switch to 4CH position. 6. After approx. 10- 20 minutes of warming-up
Then energize unit. time, adjust VRB so that the voltage across
3. For first approximately six seconds, the relay terminals 1 and 2 of the power amplifier
remains open, keeping the unit muted. assembly becomes 20mV.
Confirm that all voltages are as indicated in the 7. In the same w&y, adjust VR4 to obtain 20mV
circuit diagram on page 98. voltage readings across the terminals 25 and 26.
4.lt voltages are greatly different from rated 8. Next, connect voltmeter between terminal 5 and
values, shut off power immediately. Check ground. Adjust VRl to obtain 0V reading.
suspicious areas, especially power supply unit. 9. In the same w&V, adjust VR2 to obtain zero
readings between terminal 23 and ground.
5. If the relay opens immediately after the power

Bottom View Top View

'(+)
r*
3n* " t.# t'*
:l * ;i,r,' ri,frl* &, * tl i:rl t:ft

** *-!re
:i* * eil 4.

::1, * * ,,,&

** **r:
tt tt
GI T*G
::* i* t;t

Iffi'': 'r- Y"*- I


, I I -;*"1* **
***:,.f, +rstlt&
t c.* N. * *i*t
*.f,'l.,1 'f .t#L
':. l'.*. t, *
,*:tra,*1.*
il
t
, ,l';;1 ,*1 5 ff .*: :' : ''il
*: -::lr.*: ff $ *;f.t
*: : :'::*:.r*: {* gy :1,,:!:,:pl
$ili 5.g'rx

31
9. DIAL CORD STRINGING
1. Turn the tuning capacitor so that its plates protrude as much as possible.
2. Tie one end of the string to the spring on the Tuning drum (attached to the
tuning capacitor).
3. Lead the string around pulleys A, B, C, D and E, then wind it 3 turns around
the tuning shaft.
4. Lead the string around pulleys F and G, then wind it 2 turns around the Tuning
drum.
5. Now tie the other end of the string to the spring on the Tuning drum. Turn
the tuning shaft and check for proper function. Then trim the ends of the
string.
6. Turn the tuning shaft until the plates of the variable are all the way in. Move
the pointer to the left-end starting point on the dial and fasten it to the string
in that position.

Dial pointer

Tuning shaft

32
GIX-g'4slA

HA1137 (FlVl tF lc)

HA1138 (ArU rC)

HA1156 (Fwr MPX lC)

57
HA1452(EO AMP tC)
sl (FUNCT|ON)
515 415 315 215 ',t 15

I 4

10 3

-"12
11 2

.l
1

Bottom plate s id

s2 (MOOE)
Rear view

76 515 4/53/52/51/5

I 4
10 3
11 2r
12 1

Bottom pl ,r. ,iO. J

HA 1 335 CX-718D M51 651 P cx-049


t3 t4 t5 16 17',8\9202t?2, 23 4
9 to il t2 t3t4t5 t6 ._ to il 12 t314t5 t6 t7 t8 ilt

W
r\
,,LLL$-[ [4 4 A, t-
J

,F+$$lJ,r\,\)'
'tlJ.!#"1j1,tr.

HA1 137
HA1 136 HA1 156
HA 1 336 HA 1452 3SK45
9 ro an2t3t4 t5t6 I9 tot ilz t3t4 D
25K4OV 2SK3OA

W W
ehhtsLhbrr4

'Index
,zhtshbLlrn_,

A1
Index Index
@.' Gt
n-D
a t+-G
A-J^E
2SA725 2S8507
2SA7 26 2SC461 2SD31 3
2SA72OA 25A679 258527
2SC869 2SC7 17 25D525 2SA733 2S8530 258528
25 C1312 2SC 1344 2SA763P 2SC 1 079 25D357
2SC945 25D370 25D358
ffi3 ryE
E
c
B
2SC1318A /ffO\',-C
I ll z-'\
tli +B
2SC 1 682 2SC 1451 2SC 1384
W? \ \\
\d -rr
E
c
B

@p @'
13.3 HEADPHONE JACK ASSEMBLY (RWX.Os4)

Switch circuit ass'y No.17 Switch circuit ass'y No.13


S8 (power boosting) Realy
Switch circuit ass'y No.15 Switch circuit ass'y No.1 1

S8 (power boosting) Relay

Fg RzJ Rr
150 150 < 150
(2W)QW)? QW)

Parts List of Headphone Jack Assembly (AWX-054)

RESISTORS OTH E RS

Symbol Description Part No. Symbol Description Part No.

R1 Metal oxide 150 2W RS2P 151K Phone jack (FRONT) AKN-OO2


R2 Metal oxide 150 2W RS2P 151K Phone jack (REAR) AKN-OO2
R3 Metal oxide 150 2W RS2P 151K
R4 Metal oxide 150 2W RS2P 151K
Glx-s'4slA

13.4 POWER SITPPLY CIRCUIT B ASSEMBLY (AWR-039)

Power ampl if ier assembly-No. 1 3


Power transformer (V LT)
Power ampl if ier assembly-No.3
Power transformer (V LT)

Cr
co--€
o Cz o-{l-+
e-{l+ 0,01
0,01
lR' t\o
DI
;3.3K
I (3w)
,cs
-10,000/50
=
ca#Cs
Dz
# SR3A.M

---o
(o
o--l l+ SR3AM r{F{
R6
c8 o 0.01 D4 0.0 I Ds
ls.sK 10,000/5c
t3w)
tooo SR 3AM SR3AM

g€o Do Ds

oRo
>3.3K(3W)
-1-Co

10,000/5c C6
## SR3AM C5
roo o-{ l-+ e-Jl-
SR3AM
---€ DB
rR, !c, 0.o 1o H ----€ 0.01 D7
':.sK(gw) '10,000/5c o SR3AM #
C\I
----o Ce SR3AM
zCH e-{}+ ct
4CH
0.ol o-{ F--+
0.01
ss
2CH
4CH
Power transformer (V LT)
Power transformer (R ED)
Power transformer (V LT)
Power transformer (R ED)
Power ampl if ier assembly-No. 24
Power amplifier assembly-No. 1 4

Parts List of Power Supply Circuit B Assembly (AWR-039)

CAPACI TORS SEMICON DUCTORS


Symbol Description Part No. Symbol Description Part No.

c1 Ceramic 0.01 150V ACG-004 D1 Diode SR3AM-4


c2 Ceramic 0.01 150V ACG-004 D2 Diode SR3AM-4
c3 Ceramic 0.01 150V ACG-OO4 D3 Diode SR3AM-4
c4 Ceramic 0.01 150V ACG-004 D4 Diode SR3AM-4
c5 Ceramic 0.01 150V ACG-004 D5 Diode SR3AM.4

UO Ceramic 0.01 150V ACG-OO4 'D6 Diode SR3AM-4


C7 Ceramic 0.01 150V ACG.O04 D-t Diode SR3AM-4
CB Ceramic 0.01 150V ACG-004 D8 Diode SR3AM-4

6B
I

13.7 PROTECTTON CtRCUtT ASSEMBLY (AWM-079)

o
4)
>:
tati;
q;:
o cJ::l

l-'
A I
!+ A
@
(9
_
5
(t,
i di c\t
I

i
yL'8e ! -::i:!1::':):i::.tza:a:::;iiii;$rrdi,,,,t*,rfi::;::;li,]iiiititg::|l':,:)lii!|:,i/A,a,:::;:,ai::;
t "'

(? B
E-
$
<!
<t)
<r)
O= I

::;: ylt 6LU

vLt eru

YL' LIU

c c
zO
@

N
r
$
J
[J
(\r t-
(n
k
O
LU
d (-D

: !
::,.<1:r,:r.:r :1::r:::

(-)
! 2 I O
I 2
c( d
CI s)
L
I
O
z

otlzz'otJ OIILL'OL) 0 r/za'0 0l 0l/zz'0tJ


D .:< D
<.) c)
<') -i+ q'; -i
n E cf t
L
a S;;
Itl
f;i
:: ::

a3
Gl)(-g4s'A

-@ Sg
.3€-
c-s|{
S8
o+-o
Y++
E; g
13't c-lvt/\-< .\ on7v
7v l;
i3.9V
Sg
@Y

${e-'nnr+ ^,,3)11 e.--lll-o


.o
Power supply circuit A assembly-No.15
o-ANt+EE"dK) e+w'< Eg
Power amplifier assembly B-No.4 I $ --.rurrt---'",rtfr",, $E e--At*<-
raAA|+gEd 9- 'o-t(+EF
Power amplifier assembly A-No.4 effFrrGg
J ;i.r,rru----" -oi1+ sF
ov
Power amplifier assembly A-No.23

Power amplifier assembly B-No.23


G sEt$-4F^Y
P o-ru+-+ef o-rAAk;lJ
_a
t 5g a. i;
.o o, I?.ZY

Power amplifier assembly B-No.1


I'5TG.+:
EE--+m- qE*'6"$*, $,
Power amplifier assembly B-No.2 g e---}F+t R r+rv =c_{*+E}
p[e-rw--<=q S
Power amplifier assembly A-No.1 I "--^N'--pI+6S:",
ei
Power amplifier assembly A-No.2

Power amplifier assembly A-No.26

Power amplifier assembly A-No.25

Power amplifier assembly B-No.26

Power amplifier assembly B-No.25

Power supply circuit A assembly-No.9

Relay coils I

Fower supply circuit A assembly-Nos.20,21


Parts List of Protection Circuit Assembly (AWM-O79)

CAPACITORS
Symbol Description Part No. Symbol Description Part No.
c1 Electrolytic O.22 10V CSSA R22M 1O R36 Carbon film 2.2k RD%PM 222J
c2 Electrolytic O.22 10V CSSA R22M 1O R37 Carbon {ilm 15k RD%PM 153J
c3 Electrolytic O.22 10V CSSA R22M 1O R38 Carbon film 47k RD%PM 413J
c4 Electrolytic O.22 10V CSSA R22M 1O
c5 Electrolytic 4-1O 6V cEA 471P 6
SEMICONDUCTORS
c6 Electrolytic 47O 6V cEA 471P 6
c7 Electrolytic 22O Symbol Description Part No,
10V cEA 221P 10
c8 Electrolytic 4.7 25V CEA 4R7P 25 o1 Transistor 2SC869-C, B or D
(2SC1515K)
RESISTORS a2 Transi stor 2SC869-C, B or D
(2SC1515K)
Symbol Description Part No.
o3 T ra nsistor 2SC869-C, B or D
R1 Carbon film 3.3k RD%PM 332J (2SC1515K)
R2 Carbon film 3.3k RD%PM 332J
R3 Carbon film 3.3k RD%PM 332J o4 T ra nsistor 2SC869-C, B or D
R4 Carbon film 3.3k RD74PM 332J (2SC1515K)
R5 Carbon film 3.3k RD!/4PM 332J o5 Transisto r 2SC945-R or O
o6 Transistor 2SC945-R or O
R6 Carbon f ilm 3.3k RD74PM 332J a] Tra nsistor 2SA733-R or Q
R7 Carbon film 3.3k RDz.PM 332J
R8 Carbon film 3.3k RD%PM 332J o8 Transistor 2SC945-R or Q
R9 Carbon f ilm 15k RD74PM 153J o9 Tra nsistor 2SC1384-0 or R
R10 Carbon f ilm 15k RDY4PM 153J
D1 Diode 152472
R11 Carbon film 15k RD%PM 153J D2 Diode 152472
R12 Carbon f ilm 15k RD%PM 153J D3 Diode 152472
R13 Carbon f ilm 15k RD74PM 153J D4 Diode 152472
R14 Carbon f ilm 15k RD]/.PM 153J D5 Diode 152472
R15 Carbon f ilm 15k RD7.PM 153J
D6 Diode 152472
R16 Carbon film 15k RD%PM 153J
D7 Diode 152472
R17 Carbon film 47k RD%PM 473J D8 Diode 152472
R18 Carbon film 47k RD%PM 473J D9 Diode 152472
R19 Carbon film 47k RD%PM D10 Diode 152473
473J
R20 Carbon film 4-1k RD74PM 473J
D11 Diode 152473
R21 Carbon f ilm 1.5k RD%PM 152J
D12 Diode 152473
R22 Carbon f ilm 1.5k RD%PM 152J
R23 Carbon film 82 RD%PM B2OJ
R24 Carbon film 82 RD%PM 82OJ
R25 Carbon film 5.6k RD74PM 562J

R26 Carbon f ilm 15k RD74PM 153J


R27 Carbon f ilm 15k RD%PM 153J
R28 Carbon f ilm 91k RD%PM 913J
R29 Carbon film A-2k RD%PM 822J
R30 Carbon film 5.6k RD%PM 562J

R31 Carbon film 56k RD74PM 563J


R32 Carbon film 1Ok FIDT4PM 1O3J
R33 Carbon film 27k RD%PM 273J
R34 Carbon film 22 RD%PM 22OJ
R35 Metal oxide 91 1W RSlP 91OJ

a5
2
13.8 CONTROL AMPLTFTER ASSEMBLY (AWG-023)

rls )<
25.5'/ 28.5ll Rrr -l
(:) 11a' l5K 131 lul 15
^
1^ /l-

vl
Rss
I

t+ E 5 6K
C!
ldt co
22175 c6ro.01l
)< (J
rt)
@
cn
O
a.
:<
O
)<
(= O
t-
()
O
tr) <.
= =- )<
16
fir qt\
0I{l Rzr 12 K
+
k
<J

=>
cl< f--
<.
c)
O(11
OM
n
@
6 cD .]a
Cs 100P )< R4s 5 6K (J
(Y
L-:
c21 3o0P
I
cY 7/ a)-

cl
<D R+z
(ja

a
I ..)
r(_)
t"
l-

,, (_)

+! *t
cJa r-'l0
i:

:? CZ'

R:s
D_
(Y
C! R+:
Rst

O ;
c,) t-
tta (o
(J
3
o?t op c,,

F
6
@
R++ C+o vl
CY.
+., an I ne2

u= rO
iO
(_)

Czs

R+a

__J

86
13.9 POWER SUppLy CtRCU|T A ASSEMBLY (AWR-0So)

A A

FTJSE D, slBot- 01

3A
cs qo/16

FUSE D2 slBot - 02 0r 250525


20
1A o_ 21
c2 0.01 Y O
O
f- O
+ q
(-)
82
D3 sIBot-02 C' d 1B
2SCt3t8A
Re Crs &
=
B
=)
V
O R,, 4J 1W
99o tl)
+
+ crd (!
Lr)

c14 2200/63 c! 14V LI-)


ct +?
o'
(J
d)
Se I <- 9
O
I9 (: =
(_) O=
()

O O
Lr)
O
O
(\.1
Ctl
C\,
("J
()6
o+25D3l3 ?
^b-

c FUSE oo SlB0l-02 as 2SBSOTP


c
1A
cO
-4?.6u
=
(A
c2i 1000P 5
(9 O
tr)
o
crs 100/80
O I
cO s
(J
as 2SA?20A Or
9+
<t
6
I

t_ D6 wz- t30

D D

91
Glx-g49A,

Control amplifier assembly-Nos. 3, 1 5


Power amplifier assembly-Nos.1 1 ,12,15,16
Protection circu it assembly-N o. 1
CD-4 assembly-No.16
SO/R M assembly-Nos.9, 1 3
Power amplifier assembly-Nos.8, g, 1 8
CD-4 assembly-No.5
Protection circuit assembly-No. 1 7

12

11

'to Lamp holder assembly-No.6


Lamp holder assembly-No. 1 4
+ vr/
"+-t Rr6 lK ( lw)
1C0/16 r-----trru----o otection circu it assembly-N o"3

^' ? RrS 33K


HA^r--------o
f'8lluo
Power transformer (OR)

17
Power transformer (B LU)

t8
Ct+
19 zzoolaz

20 Power transformer (G R N )

21
Power transformer (G R N )

sIB0l -02

R3 2.2 ?
'+ J#
R+ 180 ( bW)
ffi
HAA---------o o TCe
o4'?q^
Ro
----------€
roK |
;'i
0.01
I o.ot

T
* ?
*
??3 **\lo,uo
h\\o,uo
J
t2\,uo
JJ2
2SCl3l8A Tuner assembly-No.20
p5 r41-146
8z e
?^ 14V
q<-------.1 st-215
gjH 2sc945 ITB

#'- Rl
o------4AAr-----s
o Rs l6K II ^'#I
7
CD-4 assembly-No.7
'.!
1000P[ 311,o_1F]%
I
"nA"ottt
Czo
TloooP ftoo/re
Cro

Cr+1000P
t).du 13.5V
Parts List of Power Supply Circuit A Assembly (RWR-O80)

v CAPACITORS ..Enr
SEMICONDUCTORS
Symbol Description Part No. Symbol Description Part No.
c1 Ceramic 0.01 150V ACG-004 o1 Transistor 2SD525-O or R
c2 Ceramic 0.01 150V ACG-004 02 Transistor 2SC1318A-O or R
c3 Ceramic 0.01 150V ACG-004 o3 Transistor 2SC945-R or O
c4 Ceramic 0.01 150V ACG-004 04 Transistor 2SD313-E or D
c5 Electrolytic 470 16V cEA 471P 16 o5 Transistor 2SB507P-E or D

c6 Electrolytic 470 16V cEA 471P 16 o6 Transistor 2SA720A-Q or R


c7 Electrolytic 220 50v cEA 221P 50
c8 Electrolytic 220 50v cEA 221P 50 D1 Diode srB01-01
c9 Electrolytic 220 50v cEA 221P 50 (1 S1 BB5)
c10 Electrolytic 100 16V cEA 10'tP 16 D2 Diode slB01-02
(1S1886l
c11 Electrolytic 100 35V cEA 101P 35 D3 Diode slB01-02
c12 Electrolytic 47 35V cEA 470P 35
c13 Ceramic 0.01 50v CKDYF 1032 50 D4 Diode stB01-02
c14 Electrolytic 2,200 63V cEB 222P 63 (1 S1 886)
c15 Electrolytic 100 BOV CEA 101P BO D5 Zener diode wz-140
D6 Zener diode wz-130
c16 Electrolytic 100 80v cEA 101P 80
c17 Electrolytic 100 16V cEA 101P 16
c18 Electrolytic 100 50v cEA 101P 50 OTH E RS
c19 Ceramic 0.01 50v CKDYF 1O3Z 50 Symbol Description Part No.
c20 Ceramic 0.01 50v CKDYF 1O3Z 50
Tr socket AKH-OO2
c21 Ceramic 0.01 CKDYF 1O3Z 50 lnsulator wafer AEC-043
Fuse clip AKR-013
RESISTORS
Symbol Description Part No.

R1 Carbon film 18 RD%PS lBOJ


R2 Carbon f ilm 68 RD/4PS 68OJ
R3 Carbon film 2.2 RD/4PS 2R2J
R4 Wire wound 180 5W RTsB 181K
R5 Carbon film 4.7k RD%PS 472J

R6 Carbon film 10k RD/4PS 1O3J


R7 Carbon film zJk RD%PS 272J
R8 Carbon film 16k RD/aPS 163J
R9 Carbon film 16k RDz4PS 163J
R10 Carbon film 18 RD'/4PS 180J

R11 Metal oxide 47 1W RSlP 47OJ


R12 Carbon film 8.2k RD%PS 822J
R13 Carbon film 2.2k RD%PS 222J
R14 Carbon film 16k RDy4PS 163J
R15 Carbon film 33k RD%PS 333J

R16 Metal oxide 1k 1W RSlP 1O2J


13. 1O SWITCH CIRCUIT ASSEMBLY (AWS.O48}
:::':""":: (X
:::::.:;:::.1 ()
:::':::,':::,
:.
l-
<L
.rJ>
:
/_.)F
L2
..
rrt,r:: l-
' an CD
;,::tt;;;,,, i, ,- '<)
- O
A ;:,i;:;;:;::
t;,,1;,:,,,:,,.; ;> Z
5 U ti
<)
T A
r- -.:t'"'
I

I
:=
I

o--
s I
N
ft.Y lt)
c.r t-- I
(o<
3t

)<
N-=
o)
_.s
-..N
?,.881SI z!:.C,:,"eC rr:c CY
-C!
8"t0819 8,ff,-tC

MZ Oqt"'^'^' zi u
MZ^^^Ogtl'u
i\AZ^'.'^'0El orE

-t I
::ii:::,f

::.a,..rq:)
\

^l
jl
OC\ ca.:i iijl (o$ ct) ^
r -=TT c!N - C-l ,,,:,:tD
C.l C-r C! cr3l c! J(o r,- 0l o)co
'- --r)+ L=
il
)<l Y O-0<->.,_-
I I I --
'l
cr61
-2 oo<
I

rw <x>1

;fl
|

-st
I

l__
I
o-l I

rt
-;O* | .U=b,;=<- I

:+i
(_ts I I

A
I

AI

U)
(-/)
Ll
t-
.l

Z
O
f
O O-(YL
=
c ___l (a LL u)

r- C
l-

I
I I
I
l
I

-"&---_o i

3r
-l I

i^i -l
D t--t'=,,
Ja LIj
JL- LU
rI IL_ I D

--
L
rrC-] o_
co cL S_
$r_r
I
OIT - (_) I
(_)
()Z .{ <. d-
Parts List of Switch Circuit Assembly (AWS-048)

CAPACITORS SEMICONDUCTORS
Symbol Description Part No. Symbol Description Part No.

c1 "
Ceramic 1O0p 50V CKDSL 101K 50 D1 Diode srBol-ol
c2 Ceramic 100p 50V CKDSL 101K 50 D2 Diode srBol -o1
c3 Ceramic l OOp sOV CKDSL 101K 50 D3 Diode srBol -o1
c4 Ceramic lOOp 5OV CKDSL 101 K 50 D4 Diode srBol -01
C5 Mylar O.O33 sOV coMA 333K 50 D5 Diode srBol -o1

c6 Mylar 0.033 50V coMA 333K 50 D6 Diode srBol -o1


cl Mylar 0.033 sOV coMA 333K 50 D1 Diode srB01-01
c8 Mylar 0.033 50V coMA 333K 50 D8 Diode srB01-01
D9 Diode 1S188 FM
Dl0 Diode 1S188 FM
RESISTORS
Dl1 Diode 1S188 FM-1
Symbol Description Part No-
D12 Diode 1S188 FM-1
R1 Carbon film 180k RD%PM 184J
R2 Carbon f ilm 180k RD%PM 184J
R3 Carbon {ilm SWITCHES
18Ok RD%PM 184J
R4 Carbon film 180k RD'/4PM 184J Symbol Description Part No,
R5 Carbon film 22k RD%PM 223J
Push switch (TAPE MONITOR, ASG-049
R6 Carbon f ilm 22k RD%PM 223J DOLBY NR ADP,
R] Carbon f ilm 22k RD%PM 223J LOUDNESS)
R8 Carbon f ilm 22k RD%PM 223J
R9 Metal oxide 150 2W RS2P 151K Push switch (LEVEL INDCATOR ASG.047
R10 Metal oxide 150 2W RS2P 151K SENSITIVITY}

R11 Metal oxide 150 2W RS2P 151K Push switch (SPEAKERSI ASG-046
R12 Metal ox ide 150 2W RS2P 151K
R13 Metal oxide 75 1W RSlP 75OK
R14 Metal ox ide 75 lW RSlP 75OK
R15 Metal oxide 75 1W RSlP 75OK

R16 Metal oxide 75 1W RSlP 75OK


R17 Carbon film 12k %w R D%PS 1 23J
R18 Carbon film 12k %w RD%PS 123J
R',t9 Carbon film 12k YrW R D%PS 1 23J
R20 Carbon f ilm 12k %w RD%PS 123J

R21 Carbon film 10 RD%PM lOOJ


R22 Carbon f ilm 10 RD%PM lOOJ
R23 Carbon film 10 RD%PM lOOJ
R24 Carbon f ilm 10 RD%PM 1OOJ

97
2 3
13.11 POWER AMpLtFtER ASSEMBLY (AWH-027)

A A

39

13
+36v
)< -+
)<

)<
@
:
o
oa
a,3 25D3'I0
T R:s B2 K
ft
t: 19V
Qr, Qs O
?sA't26'
Y c?
c') O
o
? 6lo
O
cta
Rrr C5 Q3
CY 6,
2.2V. A41l3s O
4
)< O Rsg
O 5
O
O
O 10 2W
B = I
I
2 B
(y? np izN crs,]zP t1
E (o
L) 5o
(_)O
?
b O

l; O

-Y
R31 4'lK
t:
l'-
O
.i- 6i
)<

C21 82P 25Bs30


ers 6=
oa C)

-Y t t:
I Eo
I
-42V
6'

I4
Y r +4sv
Y r 0s
O l(-35v)
)<
zSCr45r . Q'D
a
V)
= TY
LZ0 u4l
t: !r:+ B2K +1.8v
E l9v
0,0
02, O 25C10?3
Q+
+ n
Y zSA't26
ct O
o Cr 100P (,
c Lz2 26
c
I
(Y
R.18
Q+
Ra 39K
U
g
(ean
+041/35 O
z2
Y O z Rs+
O L oa 23
d-\ 10
I O O O (Yo
2V'/

I O O 25
aa
O
I O
a
n,. izr< Cro
,12
P
(; tl: @

9O
<)
R38 4'l K
Y Y Qrs
+ C:
N C2287P 2SA6'I9
oa c)

ct d:
-N
E@
74
-45V
-36v )

40

D D

2 3

9B
PIOI\EEFI ELECTFIONIC COFIPOFIATICIN
4-'1 , Megutro 1-Chome, Meguno-ku, Tokyo '1 53, Japan

U.S. PIC)NEEFI ELECTFIONICS COFIPOFIATION


75 Oxfond OAive, Moonachie, New Jensey O7O74,J.S.A.
PIONEEFI ELECTFION]C (EUFIOPEI N.V.
Luithagensteenweg no. 3, 2O3O Antwenp, Belgium
" T'IONEEFI ELECTFIONICS AUSTFIALIA PTY. LTEI.
178-184 Boundany FoFd, Bnaeside, Victonia 3195, Austnalia

o AUG. 1975 Printed in Japan

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