2SB1561

Transistors

Medium Power Transistor (−60V, −2A)

2SB1561

zFeatures zExternal dimensions (Unit : mm)

1) Low saturation voltage , typically MPT3
VCE (sat) = −0.15V at IC / IB = −1A / −50mA.
2) Collector-emitter voltage = −60V
4.5

0.5
1.6 1.5

3) Pc = 2W (on 40×40×0.7mm ceramic board).

4) Complements the 2SD2391.

2.5
4.0
(1) (2) (3)

1.0
0.4
0.4 0.5 0.4
1.5 1.5
(1)Base 3.0

(2)Collector
(3)Emitter

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −60 V
Emitter-base voltage VEBO −6 V
IC −2 A
Collector current ∗1
ICP −6 A
0.5
Collector power dissipation PC W
2 ∗2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
+
+

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC=−50µA
Collector-emitter breakdown voltage BVCEO −60 − − V IC=−1mA
Emitter-base breakdown voltage BVEBO −6 − − V IE=−50µA
Collector cutoff current ICBO − − −0.1 µA VCB=−50V
Emitter cutoff current IEBO − − −0.1 µA VEB=−5V
Collector-emitter saturation voltage VCE(sat) − −0.15 −0.35 V IC/IB=−1A/−50mA ∗
hFE1 120 − 270 − VCE/IC=−2V/−0.5A
DC current transfer ratio
hFE2 45 − − − VCE/IC=−2V/−1.5A
Transition frequency fT − 200 − MHz VCE=−2V, IE=0.5A, f=100MHz ∗
Output capacitance Cob − 23 − pF VCB=−10V, IE=0A, f=1MHz
∗ Measured using pulse current

Rev.A 1/3
 2SB1561
Transistors

zPackaging specifications and hFE

Type 2SB1561
Package MPT3
hFE Q
Marking BL∗
Code T100
Basic ordering unit (pieces) 1000
∗Denotes hFE

z Electrical characteristic curves

−2.0 −5 1000
mA16m
A VCE= −2V VCE=2V
A mA
0m −18 − mA −12 A −2 500
COLLECTOR CURRENT : lC (A)

−2 4 m
COLLECTOR CURRENT : IC (A)

−1 −10

DC CURRENT GAIN : hFE

−1.6 −8m
A −1 200 Ta=100°C
A −0.5 25°C
−6m 100 −40°C
−0.2 00°C
25°C
−1.2

−40°C
−4mA 50
−0.1
Ta=1

−0.05 20
−0.8
IB=−2mA −0.02 10
−0.01 5
−0.4 −5m
2
−2m
−1m 1
0.0 −5m −10m−100m −100m −1 −5
0 −1 −2 −3 −4 −5 0 −0.4 −0.8 −1.2 −1.6
COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A)

Fig.1 Grounded emitter output Fig.2 Grounded emitter propagation Fig.3 DC current gain vs.
characteristics collector current ( Ι )
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

1000
Ta=25°C −1000 −1000
IC/IB=20 Ta=25°C
500
−500 −500
DC CURRENT GAIN : hFE

200
VCE= −5V −200 −200
100 IC/IB=50
−100 Ta=100°C −100
50 −2V 25°C
−50 −50 20
−1V
20 10
−20 −40°C −20
10
−10 −10
5
−5 −5
2
−2 −2
1
−5m −10m−100m −100m −1 −5 −1 −1
−5m −10m−100m −100m −1 −5 −5m −10m−100m −100m −1 −5
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
Fig.5 Collector-emitter saturation Fig.6 Collector-emitter saturation
vs. collector current ( ΙΙ )
voltage vs. collector current ( Ι ) voltage vs. collector current ( ΙΙ )

Rev.A 2/3
 2SB1561
Transistors

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1000 1000
Ta=25°C Ta=25°C 50
TRANSITION FREQUENCY : fT (MHz)

VCE=−2V

COLLECTOR CURRENT : lC (A)

500 500 f=1MHz
IE=0A

EMITTER INPUT CAPACITANCE : Cib (pF)

Cib 20
IC=0A
200 200 10 Ic max(Pulse)
5 PW

Pw
100 100 =1

=1
00

PW s
2

0
m

m
Cob

=1
50 50 s
1

ms
20 20 500m

DC
10 10 200m
100m
5 5
50m
2 2 20m Ta=25°C
Single pulse
1 1 10m
−0.1 −1 −10 −100 0.2 0.5 1 2 5 10 20 50 100 200 500
2m 5m 10m 20m 50m 100m200m 500m 1 2
EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)
EMITTER TO BASE VOLTAGE : VEB (V)

Fig.7 Gain bandwidth product Fig.8 Collector output capacitance Fig.9 Safe operating area
vs. emitter current vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 3/3
Appendix

Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1
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