2SA2090

Transistors

Medium power transistor (−60V, −0.5A)

2SA2090

zFeatures zDimensions (Unit : mm)

1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) TSMT3
2) Low saturation voltage, typically.
(Typ. : −150mV at IC = −100mA, IB = −10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5868.
(1) Base
(2) Emitter Each lead has same dimensioins

zApplications (3) Collector Abbreviated symbol : VM

High speed switching, Low noise

zStructure
PNP Silicon epitaxial planar

zPackaging Specifications
Package Taping
Type Code TL
Basic ordering unit (pieces) 3000
2SA2090

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −60 V
Emitter-base voltage VEBO −6 V
IC −0.5 A
Collector current ∗1
ICP −1.0 A
∗2
Power dissipation PC 500 mW

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.

Rev.A 1/3
 2SA2090
Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage BVCEO −60 − − V IC= −1mA
Collector-base breakdown voltage BVCBO −60 − − V IC= −100mA
Emitter-base breakdown voltage BVEBO −6 − − V IE= −100µA
Collector cut-off current ICBO − − −1.0 µA VCB= −60V
Emitter cut-off current IEBO − − −1.0 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − −150 −300 mV IC= −100mA, IB= −10mA
DC current gain hFE 120 − 270 − VCE= −2V, IC= −50mA
Transition frequency fT − 400 − MHz VCE= −10V, IE=100mA, f=10MHz ∗1

Collector output capacitance Cob − 10 − pF VCB= −10V, IE=0mA, f=1MHz

Turn-on time Ton − 35 − ns IC= −500mA,
IB1= −50mA
Storage time Tstg − 100 − ns
IB2=50mA
Fall time Tf − 60 − ns VCC ∼− −25V ∗1

∗1 Measured using pulse current

zhFE RANK
Q

120-270

zElectrical characteristic curves

100 10 1000
IB=450µA 400µA Ta=25°C
10ms VCC=25V
COLLECTOR CURRENT : IC (mA)

350µA 1ms
COLLECTOR CURRENT : IC (A)

80
300µA 1 500µs Tstg
SWITCHING TIME (ns)

250µA
60
100ms
200µA 0.1 100 Tf

40 150µA DC Ton

100µA 0.01
20
50µA
Single non repoetitive pulse
0µA 10
0 0.001
0 1 2 3 4 5 0.1 1 10 100 0.01 0.1 1
COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A)

Fig.1 Typical output characteristics Fig.2 Safe operating area Fig.3 Switching Time

1000 1000 10
VCE=2V Ta=25°C IC/IB=10/1

Ta=100°C
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
DC CURRENT GAIN : hFE

VCE=5V
DC CURRENT GAIN : hFE

1
VCE=2V
100 Ta=−40°C
Ta=25°C 100 VCE=3V
125°C

0.1
25°C

−40°C
10 10 0.01
0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. collector Fig.5 DC current gain vs. collector Fig.6 Collector-emitter saturation voltage
current ( Ι ) current (ΙΙ) vs. collector current ( Ι )

Rev.A 2/3
 2SA2090
Transistors

10 10 1000
Ta=25°C IC/IB=10/1 Ta=25°C

TRANSITION FREQUENCY : FT (MHz)

VCE=10V

BASE EMITTER SATURATION

COLLECTOR SATURATION
VOLTAGE : VCE (sat)(V)

VOLTAGE : VBE(sat) (V)

1
−40°C
IC/IB=100/1 1 100

0.1
25°C
125°C
IC/IB=20/1
IC/IB=10/1

0.01 0.1 10
0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A)

Fig.7 Collector-emitter saturation voltage Fig.8 Base-emitter saturation voltage Fig.9 Transition frequency
vs. collector current (ΙΙ) vs. collector current
COLLECTOR OUTPUT CAPACITANCE : COB (pF)

100 1
Ta=25°C VCE=2V
f=1MHz
COLLECTOR CURRENT : IC (A)

125°C
10 0.1

25°C

−40°C

0.01
1
0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

BASE TO COLLECTOR VOLTAGE : VCB (V) BASE TO EMITTER VOLTAGE : VBE (V)

Fig.10 Collector output capacitance Fig.11 Ground emitter propagation

characteristics

zSwitching characteristics measurement circuit

RL=50Ω
VIN
IB1 IC

VCC 25V
PW
IB2
PW 50 S
Duty cycle 1%

IB1

Base current IB2

waveform

90%

IC
Collector current 10%
waveform

Ton Tstg Tf

Rev.A 3/3
Appendix

Notes
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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Appendix1-Rev2.0
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